basics of phase by niose_sherly joy
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National Workshop on Recent Trends in RFNational Workshop on Recent Trends in RF
and Microwave Techniques and Measurementsand Microwave Techniques and Measurements
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Basics of Phase Noise, Implications, Measurement Methods and Reduction Techniques
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C N
F S O
C F S S
I R F S
P N J
I F
I RF S
P N D C
M M
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C
Noise can be defined as any unwanted disturbance thatinterferes with the desired signal which can degrade theperformance of the particular system.
The primary characteristic of noise is its randomness and thisis due to the physical mechanism which generate it.
External Noise Sources
Sources are external to the system.
Internal Noise SourcesNoise created with in the system itself.
Three leading types of noises
Thermal Noise Shot Noise
Flicker Noise
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E
Atmospheric Noise ( up to 30MHz)
Caused by lightning discharges and other natural electrical
disturbances , propagated like radio waves.
Extra terrestrial noise (10MHz to 1.5GHz)
Space noise sources are sub divided into two:
Solar Noise
July 13, 2012 6
Sun is a large body at very high temperature (>60000C onsurface), radiates very broad band frequency spectrum.
Cosmic noise
Stars are also at high temperature, also radiate RF noise.
Industrial Noise (1MHz to 600MHz)
Urban and Industrial areas, the intensity of noise made by
human outstrips that created by any other source.
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7
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M ( ), .
A , .
A , .
T J.B J 1982 J .
I , . T
, .
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Time Domain Frequency Domain
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Thermal noise currentobserved when
a) Standard 50resistor is shortcircuited
across a 50 noisefree resistor
c) AC connectedacross a 50 normalresistor
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Thermal noise power in a conductor is proportional to theabsolute temperature and bandwidth of the measuring system.
Pn T x BW = KTB
whereK = Boltzmanns constant(1.38 x 10-23 J/ K)
0
BW(B) = Bandwidth in Hz
At room temperature of 170C (2900K) for 1.0 Hz BW
Pn = -174dBm/Hz
-174dBm is the minimum noise level that is practicallyachievable, for further reduction the temperature is to be
lowered.
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KTBRV
KTBRRPV
R
V
R
V
R
VP
n
nn
n
L
n
4
44
1
4
2
222
===
===
free R and noise source vn .
A
RL
RL R .
T
.
July 13, 2012 12
qu va en rcu o
a resistor as a noisegenerator
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C..
The ways to reduce thermal noise contents are
Reduce the temperature of operation
Reduce the value of resistor
KTBRVn 4=
Thermal noise is only generated by the
real part of any impedance ie resistor.
The imaginary part does not generatenoise.
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Equivalent Circuit ofa resistor as a noise
generator
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Most important source of noise in active devices, particularlynoticeable in semiconductor devices such as tunnel junctions,
schottky barrier diodes and P-N junctions.
Arises from random flow of carriers through a potential barrier.
The current carriers even under dc conditions are not moving
in a continuous flow since the distance they travel issomewhat different for each carrier, because of their randommotion.
Power spectrum is flat with frequency.
The name shot noise is derived from the fact that when drivinga speaker, excessive shot noise sounds like a shower of leadshot falling on a metallic surface.
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C
Shot noise in a diode is
q = charge of an electron(1.6 x 10-19 coulomb)
Idc = diode dc current (amperes)
BW = Band Width of frequencies involved(Hz)
BWIqi dcnoise = 2
Difficult to calculate for complete transistor, depends on thecurrents in the emitter-base and collector-base diodes.
Device manufactures often specify an equivalent noise
resistance
Resistance value that produces the same amount of thenoise as the devices shot noise when applied to the
thermal noise of Vn.
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T B/ B /.
T
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I F C
A L , F
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=1 106
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S S
= 1 109
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C F
There are two classes of frequency variations :
Discrete Signals
Appear as distinct components,
called as spurious signals. Related to knownphenomena in the signalsource such as power line
Random Signals
Appear as random phase fluctuations and calledas phase noise.
The source of random noise in an oscillatorincludes thermal noise, shot noise and flickernoise.
frequency, vibrationfrequencies or mixer products.
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R .
A .
Phasor representation of
additive noise contribution
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AM components FM components
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I F
I
. I
V() = VO (20 )
VO= 0 =
I
.
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I .
R
V( ) =[ VO+()(2 O+( ))
=
(AM )() = P
(P )
VO =
O =
Oscillators operate in saturation, AM noise component is 20dB lower
than the phase noise component , so is neglected.
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T
CLRW
A
Ref 10 dBm Att 40 dB
1 AP
*RBW 300 Hz
*
*
VBW 3 Hz
SWT 190 s
-30
-20
-10
0
10
1
Marker 1 [T1 ]
-3.75 dBm
1.039989200 GHz
Marker 2 [T1 ]
-70.16 dBm
1.039974200 GHz
Marker 3 [T1 ]
-68.91 dBm
1.040004200 GHz
.
O . E:
W VCXO .
Center 1.0399892 GHz Span 100 kHz10 kHz/
-90
-80
-70
-60
-50
-40
23
Date: 1.JAN.2000 02:54:22
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J
, B/H
1 H
Two ways of describing effectively the same parameter, choicedepends upon the application.
phase noise -10MHz TCXO
Offset SSB Phase
Noise
Phase
Noise
10Hz -90dBc/Hz
100Hz -120dBc/Hz .
,
. T
.T D M (TDM)
.
(typ.)at
10MHz
1kHz -135dBc/Hz10kHz -150dBc/Hz
100kHz -155dBc/Hz
Specification
Integrated Phase Jitter
RMS
(12kHz to 20MHz) typ.
1ps
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J J
J
N RMS ( )
RF .
o It is possible to quote phase jitter in two formats.
J
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U
.
I RMS,
.
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F
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F .
F ,
.M
.
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A
Absolute Phase Noise
T
.
A
Specified on sources or complete
system
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U
.
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C
Residual (Additive/Two port ) Phase noise
N , .
July 13, 2012 34
() .
T
.
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C
Two-port Vs Absolute Phase Noise
T
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U
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A
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I F
A .
S , S N R (SNR) .
P :
L
D
L
S
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E ()
T 1 2
. T LO
M
.
F
1LO
2 LO
LO .
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C
LO
.
P L
.
T .
F
:
D R S
D C S
A M C S
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C A
D
D R
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U
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I ,
LO
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S
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C..
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B E
M
.
I .
I QPSK, I & Q
.
A
.
C LO
.
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C
I .. 8
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R
.
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C
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B C
[ ]t)(tf2]sinV
e(t)[1V)V(t 0
0
0 ++=
dt
(t)d
2
1(t))A(t 0
+=
D D ,
.
D A, .
D .S
.
July 13, 2012 45
)f(V 0S )(S)(S)(S)(S
2A fffff =
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D C
There are a number of ways to specify phase noise:
o Single Sideband Phase Noise (t) (dBC/Hz)
o Spectral Density of Frequency Fluctuations Sf(f) ( Hz2/Hz)
o pec ra ens y o ase uc ua ons
(Radians2/Hz)
o Two Point Allan Variance y()
o Incidental Frequency Modulation f(Hz)
o Incidental Phase modulation (Radians)
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( ) ( / )
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() (BC/H)
E
1 H .
PowerSignalTotalBandSideHz1SingleaindensityPowerL(f) =
Simple and most commonmethod.
Directly measured in
spectrum analyzer.
The unit of dBc/Hz refer to
dB below the carrier
measured in a 1Hz
bandwidth.
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D F F () H2/H
One sided spectral distribution of the frequency
fluctuations per Hz bandwidth.
Sf(f) = (f rms)2 /BWfrms = RMS value of a peak frequency modulation
BW = Bandwidth of frms measurement
This is the power spectral density of the frequency
discriminators output.
It is directly measured by connecting an audio spectrum
analyzer to the output of a frequency discriminator whoseinput is the oscillator under measured.
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D () 2/H
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D () 2/H
It is often referred to as the spectral density and describes
the energy distribution as a continuous function, expressed
in units of energy per Hz bandwidth
S(f) = (2rms )/BW
2rms= RMS value of peak phase modulation
= an w use o measure rms
This is the power spectral density of the phase
demodulators output.
It is directly measured by connecting an audio spectrumanalyzer to the output of a phase demodulator whose input
is the oscillator under measured.
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A () Also known as short term stability, a time domain
measure of oscillator instability.
Directly measured using a frequency counter torepetitively measure the oscillator frequency over a time
period (gate time).
The Allan variance is the expected value of the RMSchange in frequency with each sample normalized by the
oscillator frequency.
Allan Variance for 10MHz OCXOseconds stability
0.01 1x10-10
0.1 5x10 -11
1.0 1x10-11
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I F H
Always specified with a lower and upper frequency limit.
Often used to specify overall oscillator instability, generally inFM receivers where the video pass band is the frequency limit.
Calculated by taking the square root of the spectral density ofthe frequency fluctuations integrated from a lower frequency
.
Directly measured by passing the output of a frequencydiscriminator whose input is the oscillator under test, through aband pass filter and determining the RMS frequency variation.
=b
a
f
f
ff dffS )(
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I
This is a measure of the total RMS phase instability over aband of offset frequencies.
Preferred for phase modulated signals, since it provides a
better measure of overall oscillator instability.
Calculated by taking the square root of the spectral density ofthe hase fluctuations inte rated from lower fre uenc limit toan upper frequency limit.
Directly measured by passing the output of a phasediscriminator whose input is the oscillator under test, through aband pass filter and determining the RMS phase variation.
=b
a
f
f
dffS )(
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There are three fundamental ways to measure these
perturbations of the signal
Direct Spectrum Measurement
Spectrum Analyzer Method
Heterodyne Frequency Measurement
Measurement with frequency discriminator Measurement with phase detector
Phase Detector Method
Phase Detector Method with PLL Controlled Reference
PLL Method with Cross Correlation
Delay Line Method
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A
D S A .
M ,
. M C L LT. M LPN
.
P BW BIF 1H BW.
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C
LPN= LPN () 10 BNIF
LPN, B NIF , 1 W 1H
L PN, RMS
B NIF, 1 W
B NIF
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C
D ,
3B .
LPN()= LPN () 10
CLRWR
A
Ref 10 dBm Att 40 dB
1 AP
*RBW 300 Hz
*
*
VBW 3 Hz
SWT 190 s
PRN
-70
-60
-50
-40
-30
-20
-10
0
10
1
Marker 1 [T1 ]
-3.75 dBm
1.039989200 GHz
2
Marker 2 [T1 ]
-70.16 dBm
1.039974200 GHz
3
Marker 3 [T1 ]
-68.91 dBm
1.040004200 GHz
RBW+ .
L( ) = LPN () LT M
BW .
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Center 1.0399892 GHz Span 100 kHz10 kHz/
-90
-80
Date: 1.JAN.2000 02:54:22
LT = 3.75B
LPN () = 70.16B
BRBW = 300HL () = 70.16 10300 (3.75)
=91.2B91.2B
C B
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C B
C RBW
.
I RBW , IF .
D U T (DUT) S A.
S A
.
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,
A
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A
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H F
Time domain method.
Down converts the signal under test to an intermediate
frequency.
High resolution frequency counter repeatedly counts the
,
measurement held constant. This allows several calculations of the fractional
frequency,, over the time period used.
Allan Variance
y () computed from which is the timedomain correspondence to (f) in the frequency domain.
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Feeds the signal under test into a frequency discriminator
and monitors the output on a low frequency spectrum
analyzer.
July 13, 2012 61
FM
DiscriminatorBaseband
Analyzer
ow ass
FilterOUT
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D
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D C
To maintain quadrature, PLL technique is used to correct
the reference source.
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A FM
RF . O
.
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Comparison of Phase Noise Measurement Methods
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Phase Noisemeasurement
Method
Advantage Disadvantage
Direct measurement
with spectrumanalyser
Easy setup/easy operation No calibration necessary
AM noise and phase noise cannot be
separated.
No carrier suppression: Restricted dynamic range
Overlap of RBW filter shape at low offset
Measurement accuracy limited by LO
Phase Detector
Method
+
PLL controlled
reference
AM noise and phase noiseseparated
Carrier suppression
- high dynamic range
- small offsets
Noise of LO of SA of minor
importance Measurement of two
identical oscillators possible
(3dB correction)
Complicated setup
Calibration required
Very complicated calibration in between
PLL bandwidth
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Phase Noise
measurement
Method
Advantage Disadvantage
Cross correlation
method
Improvement of phase
noise of test system /
reference oscillator (up to
Longer measurement time for
extremely low phase noise
Very complex setup
Delay line method
Suitable for high drifting
oscillators
No reference oscillator
necessary
AM suppression
Complicated setup
Complicated calibration
Restricted measurement range
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N
.
F
U
F FM/ M
C
S
D .
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A
.
B ,
.
I
(10 MH) P L L (PLL).
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Cont..
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C : H .
U N B S.
C .
G C A C:
S
R .
F , , D .
G B GPS
.
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Signal Sources
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Quartz crystal based oscillator
O
.
W
Q, ,
.
Phase Locked Oscillator
I , L O T
P L L (PLL).
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Crystal oscillators produce asmall fraction of undesirableenergy (phase noise).
The response usually comprisesof three distinct slopescorresponding to three primary
the oscillator.
July 13, 2012 74
Region A: It is flicker FM noise , magnitude is determined by
the quality of crystal.
Region B: It is the 1/F noise and is by the semiconductor
activity.
Region C: It is the white noise or broadband noise.
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30 . C (C)
0.25 DC .
C C (C)
, 0.1.
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C C (C) D C C (DC)
O , .
S 1 1010 DC .
July 13, 2012 76
Type of Oscillator SSB phase noise
Standard crystal Oscillator 130B/H 1 KH
TCXO -140dBc/Hz at 1 KHz offset
OCXO -150dBc/Hz at 1KHz offset
Comparison of phase noise
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C MH GH .
P ( N2 ) 20 N B.
=(N)
Degradation20 B
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2 6
3 9
4 12
5 14
10 20
20 26
100 40
Basics of Phase Noise, Implications, Measurement Methods and Reduction Techniques
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W,() =
, B/H
() = , B/H
1 AP
CLRWR
A
Att 40 dB *Ref 1.8 dBm
*
*
RBW 1 kHz
VBW 10 Hz
SWT 50 s
*
-20
-10
0
1
Marker 1 [T1 ]
1.71 dBm
18.817600000 MHz
Delta 1 [T1 ]
-77.38 dB
25.000000000 kHz
Fundamental oscillator
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Center 18.8176 MHz Span 500 kHz50 kHz/
-90
-80
-70
-60
-50
-40
-30
20
1
A
Ref 15 dBm Att 50 dB *
*
*
RBW 1 kHz
VBW 10 Hz
SWT 50 s*
10
1Marker 1 [T1 ]
11.39 dB
376.500000000 MHz
Delta 1 [T1 ]
-57.81 dB
25.000000000 kHz
Date: 10.JUL.2012 07:36:05
CLRWR
Center 376.501 MHz Span 500 kHz50 kHz/
1 AP
-80
-70
-60
-50
-40
-30
-20
-10
0
1
Date: 10.JUL.2012 11:47:05
20 times multiplied output
C A
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Parameter Quartz Oscillators Atomic Oscillators
TCXO MCXO OCXO Rubidium Cesium
Accuracy
(per year)
2 x 10-6 5x 10-8 1 x 10-8 5 x 10-10 2 x 10-11
Aging/Year 5x 10-7 2x 10-8 5x 10-9 2 x 10-10 0
Temp.Stab. 5 x 10-7
-
3 x 10-8
-
1 x 10-9
-
3 x 10-10
-
2 x 10-11
-,
Stability,() (=1) 1 x 10-9
3 x 10-10
1 x 10-12
3 x 10-12
5 x 10-11
Size(cm3) 10 30 20-800 200-800 6,000
Warm up
Time (min)
0.03(to 1x10-6)
0.03(to 2x10-8)
4
(to 1x10-8)
3(to 5x10-10)
20(to 2x10-11)
Power(W)(at lowest temp.)
0.04 0.04 0.6 20 30
Price($) 10-100
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There are a number of sources that sum up to form the PLLnoise profile
VCO
PLL Dividers Reference Source
The hase noise characteristic will also be influenced b thePLL bandwidth of the frequency locking circuitry.
Within the PLL bandwidth, the phase noise corresponds to theadditive noise of several PLL components such as divider,phase detector and of the multiplied reference signal.
Due to the multiplying effect in the PLL, phase noise is higherthan that of the reference oscillator.
July 13, 2012 81
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C ( 1H)
P .
D ,
.
W PLL BW, PLL ,
.
B
P VCO .
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C B
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B .
B
L PLL .
, .
B
L .
T PLL .
July 13, 2012 84
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B
C ,
PLL .
P .
M B .
M BW
. T BW
PLL.
July 13, 2012 85
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VCO 10KH = 111BC/H (S VCO) P PLL
= + 20 N + 10
= 210 + 20 260 + 10 4106
= 210 + 48.3 + 66
= 95.6B/H
C 1040MH
R
16MH
P
LBW
= 140B + 20 260
= 91.7B/H
S .
Basics of Phase Noise, Implications, Measurement Methods and Reduction Techniques
VSSC/ISRO
N 260R 4
P
S
210B/H
(
)
P
140B/H
(
)
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O :P N
F (1/ )
F C
P N
.
C
C
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C , .
L 1/
(1) (2) ().
I Q, ,
.
D L Q 6B.
D B
.
F 0/(2QL) , .
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A
,
1/ ,
= 0 X=0
"" ( = 0 B/).
= 1 " 1/"
( = 20 B/).
T
= 2, 3, 4,
.
. 9B/O , . BJT FET.
S
T(T 2).A
10 I.
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Leeson equation provides how circuit noise and circuit
elements factor into the phase noise measurement.
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T PLL
.
T F : I PLL/F PLLVCO
R SM
P S
L CV
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C
G VCO
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T .
T .
T .
.
I ,
. M 20N
N .
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C . I ,
DC .
I DC DC ( L D O )
.
S ( L ESR) .
D .
RF F .
O F C
.
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After putting LDO
July 13, 2012 94
U RF
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U RF
.
P S (V) (V)
PCB . VCO PCB
VCO
.
July 13, 2012 95
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V
I =20 ((
)/(2 ))
L
F
C
F L V (13.5, 20H 2 KH).
July 13, 2012 96
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: ,
, C
C H: 5 3 .
: C MIL
) .
F ,
.
W , TCXO OCXO
.
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During vibrationBefore vibration
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July 13, 2012 99
Oscillator card packed in Silicon Vibration IsolatorOscillator card packed with foam packing
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During vibrationBefore vibration
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F
. I PLL ,
..
W
.
T
.
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O
,
.
,
.
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F S A , C R
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F S A , C R
L N E S D , C.D. M,
J.A.C
P N S S (T A) ,W.P.R
E C S , K & D
M M S: P AT S M T I
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