bt137-600e.pdf

TO-22

0AB BT137-600E

4Q Triac12 June 2014 Product data sheet

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1. General descriptionPlanar passivated sensitive gate four quadrant triac in a SOT78 plastic package intendedfor use in general purpose bidirectional switching and phase control applications. Thissensitive gate "series E" triac is intended to be interfaced directly to microcontrollers,logic integrated circuits and other low power gate trigger circuits.

2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants

3. Applications General purpose motor control General purpose switching

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-state voltage

- - 600 V

ITSM non-repetitive peak on-state current

full sine wave; Tj(init) = 25 C;tp = 20 ms; Fig. 4; Fig. 5

- - 65 A

IT(RMS) RMS on-state current full sine wave; Tmb 102 C; Fig. 1;Fig. 2; Fig. 3

- - 8 A

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 C; Fig. 7

- 2.5 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 C; Fig. 7

- 4 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 C; Fig. 7

- 5 10 mA

NXP Semiconductors BT137-600E4Q Triac

BT137-600E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved

Product data sheet 12 June 2014 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G+;Tj = 25 C; Fig. 7

- 11 25 mA

IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 2.5 20 mA

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb T2 mounting base; mainterminal 2

1 2

mb

3

TO-220AB (SOT78)

sym051

T1G

T2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BT137-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB

SOT78

BT137-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB

SOT78

BT137-600E/L01 TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB

SOT78

7. MarkingTable 4. Marking codesType number Marking code

BT137-600E

BT137-600E/DG BT137-600E/DG

BT137-600E/L01




8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state voltage - 600 V

IT(RMS) RMS on-state current full sine wave; Tmb 102 C; Fig. 1;Fig. 2; Fig. 3

- 8 A

full sine wave; Tj(init) = 25 C;tp = 20 ms; Fig. 4; Fig. 5

- 65 AITSM non-repetitive peak on-statecurrent

full sine wave; Tj(init) = 25 C;tp = 16.7 ms

- 71 A

I2t I2t for fusing tp = 10 ms; SIN - 21 A2s

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s;T2+ G+

- 50 A/s

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s;T2+ G-

- 50 A/s

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s;T2- G-

- 50 A/s

dIT/dt rate of rise of on-state current

IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s;T2- G+

- 10 A/s

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 C

Tj junction temperature - 125 C




Tmb (C)- 50 1501000 50

003aae689

4

6

2

8

10IT(RMS)

(A)

0

Fig. 1. RMS on-state current as a function of mountingbase temperature; maximum values

003aae692

0

5

10

15

20

25

10- 2 10- 1 1 10surge duration (s)

IT(RMS)(A)

f = 50 HzTmb 102 C

Fig. 2. RMS on-state current as a function of surgeduration; maximum values

003aae690

4

8

12

Ptot(W)

0

IT(RMS) (A)0 1084 62

conductionangle

(degrees)

formfactor

a306090

120180

42.82.21.9

1.57

= 180

120

90

60

30

= conduction anglea = form factor = IT(RMS)/IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values




003aae691

10

102

103

10- 5 10- 4 10- 3 10- 2 10- 1

ITSM

t

IT

Tj(init) = 25 C maxtp

(1)(2)

tp (s)

ITSM(A)

tp 20 ms(1) dIT/dt limit(2) T2- G+ quadrant limit

Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values003aae693

40

20

60

80

ITSM(A)

0

number of cycles1 10410310 102

ITSM

t

IT

Tj(init) = 25 C max1/f

f = 50 Hz

Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximumvalues




9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

half cycle; Fig. 6 - - 2.4 K/WRth(j-mb) thermal resistancefrom junction tomounting base

full cycle; Fig. 6 - - 2 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air - 60 - K/W

003aae698

tp (s)10-5 1 1010-110-210-4 10-3

1

10-1

10

Zth(j-mb)(K/W)

10-2

bidirectionalunidirectional

Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width




10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;Tj = 25 C; Fig. 7

- 2.5 10 mA

VD = 12 V; IT = 0.1 A; T2+ G-;Tj = 25 C; Fig. 7

- 4 10 mA

VD = 12 V; IT = 0.1 A; T2- G-;Tj = 25 C; Fig. 7

- 5 10 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G+;Tj = 25 C; Fig. 7

- 11 25 mA

VD = 12 V; IG = 0.1 A; T2+ G+;Tj = 25 C; Fig. 8

- 3 25 mA

VD = 12 V; IG = 0.1 A; T2+ G-;Tj = 25 C; Fig. 8

- 14 35 mA

VD = 12 V; IG = 0.1 A; T2- G-;Tj = 25 C; Fig. 8

- 3 25 mA

IL latching current

VD = 12 V; IG = 0.1 A; T2- G+;Tj = 25 C; Fig. 8

- 4 35 mA

IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 2.5 20 mA

VT on-state voltage IT = 10 A; Tj = 25 C; Fig. 10 - 1.3 1.65 V

VD = 12 V; IT = 0.1 A; Tj = 25 C;Fig. 11

- 0.7 1 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 C;Fig. 11

0.25 0.4 - V

ID off-state current VD = 600 V; Tj = 125 C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-statevoltage

VDM = 402 V; Tj = 125 C; (VDM = 67%of VDRM); exponential waveform; gateopen circuit

- 50 - V/s

tgt gate-controlled turn-ontime

ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/dt = 5 A/s

- 2 - s




Tj (C)- 60 14090- 10 40

003aae809

1

2

3

0

(1)(2)

(3)(4)

(1)(2)(3)(4)

IGTIGT (25 C)

(1) T2- G+(2) T2- G-(3) T2+ G-(4) T2+ G+

Fig. 7. Normalized gate trigger current as a function ofjunction temperature

Tj (C)- 60 14090- 10 40

003aae697

1

2

3

0

ILIL(25C)

Fig. 8. Normalized latching current as a function ofjunction temperature

Tj (C)- 60 14090- 10 40

003aae699

1.0

0.5

1.5

2.0

0

IHIH(25C)

Fig. 9. Normalized holding current as a function ofjunction temperature

VT (V)0 321

003aae696

10

20

30

IT(A)

0

(1) (2) (3)

Vo = 1.264 VRs = 0.038 (1) Tj = 125 C; typical values(2) Tj = 125 C; maximum values(3) Tj = 25 C; maximum values

Fig. 10. On-state current as a function of on-statevoltage




Tj (C)- 60 14090- 10 40

003aae694

0.8

0.4

1.2

1.6

0

VGT (25C)VGT

Fig. 11. Normalized gate trigger voltage as a function of junction temperature




11. Package outline

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATEIEC JEDEC JEITA

SOT78 SC-463-lead TO-220AB

SOT78

08-04-2308-06-13

Notes1. Lead shoulder designs may vary.2. Dimension includes excess dambar.

UNIT A

mm 4.74.11.401.25

0.90.6

0.70.4

16.015.2

6.65.9

10.39.7

15.012.8

3.302.79

3.83.5

A1

DIMENSIONS (mm are the original dimensions)

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.61.0

c D

1.31.0

b2(2) D1 E e

2.54

L L1(1)L2(1)max.

3.0

p q

3.02.7

Q

2.62.2

D

D1q

p

L

1 2 3

L1(1)

b1(2)(3)

b2(2)(2)

e e

b(3)

AEA1

c

Q

L2(1)

mountingbase

Fig. 12. Package outline TO-220AB (SOT78)




12. Legal information

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13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................610 Characteristics .......................................................711 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

NXP Semiconductors N.V. 2014. All rights reservedFor more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected] of release: 12 June 2014

1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Package outline12. Legal information