bt138

Upload: dadang-hidayat

Post on 29-May-2018

230 views

Category:

Documents


0 download

TRANSCRIPT

  • 8/9/2019 BT138

    1/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    GENERAL DESCRIPTION QUICK REFERENCE DATA

    Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT

    envelope, intended for use inapplications requiring high BT138- 500 600 800bidirectional transient and blocking BT138- 500F 600F 800Fvoltage capability and high thermal BT138- 500G 600G 800Gcycling performance. Typical VDRM Repetitive peak off-state 500 600 800 Vapplications include motor control, voltagesindustrial and domestic lighting, IT(RMS) RMS on-state current 12 12 12 Aheating and static switching. ITSM Non-repetitive peak on-state 95 95 95 A

    current

    PINNING - TO220AB PIN CONFIGURATION SYMBOL

    PIN DESCRIPTION

    1 main terminal 1

    2 main terminal 2

    3 gate

    tab main terminal 2

    LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).

    SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

    -500 -600 -800VDRM Repetitive peak off-state - 500

    1 6001 800 Vvoltages

    IT(RMS) RMS on-state current full sine wave; Tmb 99 C - 12 AITSM Non-repetitive peak full sine wave; Tj = 25 C prior to

    on-state current surget = 20 ms - 95 At = 16.7 ms - 105 A

    I2t I2t for fusing t = 10 ms - 45 A2sdIT/dt Repetitive rate of rise of I TM = 20 A; IG = 0.2 A;

    on-state current after dIG/dt = 0.2 A/striggering T2+ G+ - 50 A/ s

    T2+ G- - 50 A/ sT2- G- - 50 A/ sT2- G+ - 10 A/ s

    IGM Peak gate current - 2 AVGM Peak gate voltage - 5 VP

    GMPeak gate power - 5 W

    PG(AV) Average gate power over any 20 ms period - 0.5 WTstg Storage temperature -40 150 CTj Operating junction - 125 C

    temperature

    T1T2

    G1 2 3

    tab

    1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac mayswitch to the on-state. The rate of rise of current should not exceed 15 A/s.

    September 1997 1 Rev 1.200

  • 8/9/2019 BT138

    2/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    THERMAL RESISTANCES

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    Rth j-mb Thermal resistance full cycle - - 1.5 K/Wjunction to mounting base half cycle - - 2.0 K/W

    Rth j-a Thermal resistance in free air - 60 - K/Wjunction to ambient

    STATIC CHARACTERISTICSTj = 25 C unless otherwise stated

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    BT138- ... ...F ...GIGT Gate trigger current VD = 12 V; IT = 0.1 A

    T2+ G+ - 5 35 25 50 mAT2+ G- - 8 35 25 50 mAT2- G- - 10 35 25 50 mA

    T2- G+ - 22 70 70 100 mAIL Latching current VD = 12 V; IGT = 0.1 A

    T2+ G+ - 7 40 40 60 mAT2+ G- - 20 60 60 90 mAT2- G- - 8 40 40 60 mAT2- G+ - 10 60 60 90 mA

    IH Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA

    VT On-state voltage IT = 15 A - 1.4 1.65 VVGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

    VD = 400 V; IT = 0.1 A; 0.25 0.4 - VTj = 125 C

    ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mATj = 125 C

    DYNAMIC CHARACTERISTICSTj = 25 C unless otherwise stated

    SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

    BT138- ... ...F ...GdVD/dt Critical rate of rise of V DM = 67% VDRM(max); 100 50 200 250 - V/ s

    off-state voltage Tj = 125 C; exponentialwaveform; gate opencircuit

    dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 C; - - 10 20 - V/ scommutating voltage IT(RMS) = 12 A;

    dIcom/dt = 5.4 A/ms; gateopen circuit

    tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max); - - - 2 - stime IG = 0.1 A; dIG/dt = 5 A/s

    September 1997 2 Rev 1.200

  • 8/9/2019 BT138

    3/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    Fig.1. Maximum on-state dissipation, Ptot, versus rmson-state current, IT(RMS), where = conduction angle.

    Fig.2. Maximum permissible non-repetitive peakon-state current ITSM, versus pulse width tp, for

    sinusoidal currents, tp 20ms.

    Fig.3. Maximum permissible non-repetitive peakon-state current ITSM, versus number of cycles, for

    sinusoidal currents, f = 50 Hz.

    Fig.4. Maximum permissible rms current IT(RMS) ,versus mounting base temperature Tmb.

    Fig.5. Maximum permissible repetitive rms on-statecurrent IT(RMS), versus surge duration, for sinusoidal

    currents, f = 50 Hz; Tmb 99C.

    Fig.6. Normalised gate trigger voltageVGT(Tj)/ VGT(25C), versus junction temperature Tj.

    0 5 10 150

    5

    10

    15

    20

    = 180120

    90

    60

    30

    BT138

    IT(RMS) / A

    Ptot / W Tmb(max) / C

    125

    117.5

    110

    102.5

    95

    1

    -50 0 50 100 1500

    5

    10

    15BT138

    99 C

    Tmb / C

    IT(RMS) / A

    10us 100us 1ms 10ms 100ms10

    100

    1000BT138

    T / s

    ITSM / A

    TITSM

    time

    I

    Tj initial = 25 C max

    T

    dI /dt limitT

    T2- G+ quadrant

    0.01 0.1 1 100

    5

    10

    15

    20

    25BT138

    surge duration / s

    IT(RMS) / A

    1 10 100 10000

    20

    40

    60

    80

    100BT138

    Number of cycles at 50Hz

    ITSM / A

    TITSM

    time

    I

    Tj initial = 25 C max

    T

    -50 0 50 100 1500.4

    0.6

    0.8

    1

    1.2

    1.4

    1.6BT136

    Tj / C

    VGT(Tj)VGT(25 C)

    September 1997 3 Rev 1.200

  • 8/9/2019 BT138

    4/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    Fig.7. Normalised gate trigger currentIGT(Tj)/ IGT(25C), versus junction temperature Tj.

    Fig.8. Normalised latching current IL(Tj)/ IL(25C),versus junction temperature Tj.

    Fig.9. Normalised holding current IH(Tj)/ IH(25C),versus junction temperature Tj.

    Fig.10. Typical and maximum on-state characteristic.

    Fig.11. Transient thermal impedance Zth j-mb, versuspulse width tp.

    Fig.12. Typical commutation dV/dt versus junctiontemperature, parameter commutation dIT/dt. The triacshould commutate when the dV/dt is below the valueon the appropriate curve for pre-commutation dIT/dt.

    -50 0 50 100 1500

    0.5

    1

    1.5

    2

    2.5

    3BT138

    Tj / C

    T2+ G+T2+ G-

    T2- G-T2- G+

    IGT(Tj)IGT(25 C)

    0 0.5 1 1.5 2 2.5 30

    10

    20

    30

    40BT138

    VT / V

    IT / A

    Tj = 125 C

    Tj = 25 C

    typ max

    Vo = 1.175 VRs = 0.0316 Ohms

    -50 0 50 100 1500

    0.5

    1

    1.5

    2

    2.5

    3TRIAC

    Tj / C

    IL(Tj)IL(25 C)

    0.001

    0.01

    0.1

    1

    10BT138

    tp / s

    Zth j-mb (K/W)

    10us 0.1ms 1ms 10ms 0.1s 1s 10s

    tpP

    t

    D

    bidirectional

    unidirectional

    -50 0 50 100 1500

    0.5

    1

    1.5

    2

    2.5

    3TRIAC

    Tj / C

    IH(Tj)

    IH(25C)

    0 50 100 1501

    10

    100

    1000

    5.49.1

    Tj / C

    7

    dV/dt (V/us)

    4.2

    dIcom/dt =

    15 A/ms 12

    off-state dV/dt limitBT138...G SERIES

    BT138 SERIES

    BT138...F SERIES

    September 1997 4 Rev 1.200

  • 8/9/2019 BT138

    5/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    MECHANICAL DATA

    Dimensions in mm

    Net Mass: 2 g

    Fig.13. TO220AB; pin 2 connected to mounting base.

    Notes1. Refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".

    10,3

    max

    3,7

    2,8

    3,03,0 max

    not tinned

    1,3

    max

    (2x)

    1 2 3

    2,4

    0,6

    4,5max

    5,9min

    15,8max

    1,3

    2,54 2,54

    0,9 max (3x)

    13,5min

    September 1997 5 Rev 1.200

  • 8/9/2019 BT138

    6/6

    Philips Semiconductors Product specification

    Triacs BT138 series

    DEFINITIONS

    Data sheet status

    Objective specification This data sheet contains target or goal specifications for product development.

    Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

    Product specification This data sheet contains final product specifications.

    Limiting values

    Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

    Application information

    Where application information is given, it is advisory and does not form part of the specification.

    Philips Electronics N.V. 1997

    All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

    The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

    LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

    September 1997 6 Rev 1.200