building analog & digital power supplies using renesas...

© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.

2012/8/15

瑞萨电子（中国）有限公司

A&P产品中心

Building Analog & Digital Power Supplies Using Renesas Green Semiconductor Devices

© 2012 Renesas Electronics (China) Co., Ltd. All rights reserved.2

Agenda

Contents guide

Renesas Company Introduction

Renesas Leading Technologies

Renesas A&P Product for High Efficiency System Design

MOSFET

IGBT Device

FRD (Fast Recovery Diode)

Optical Devices

Others Standard Product

A&P Applications Example

Page3513222837 4247 5457


Contents Guide


1. Contents Guide

Renesas company introduction

Renesas take responsibility to support & provide green products

Renesas is high technology company in semiconductor– Renesas semiconductor technology base– Semiconductor technology trend by Renesas view

Renesas can provide high performance semiconductor products– MCU products– Auto electronic products– Soc products– Analog & power device products

Renesas take responsibility to support & provide green solutions

Green communications with Green semiconductor solutions – High efficiency system design for power supply and Data center – Technologies in digital power supply – Solutions for Green energy system

UPS, inverter, solar power… support– High voltage/current, high capacity IGBT development


Renesas Company Introduction


Worldwide Semiconductor Suppliers: CY2011 Revenue Ranking

Global Semiconductor Market Position

1

2

3

4

5

6

7

9

12

10

8

11

Supplier 2011 Revenue ($M) 2011 Share2011Rank

Source: IHS iSuppli “Annual 2011 Semiconductor Market Share”

Intel 48,721

Samsung Electronics 28,563

Texas Instruments 13,967

Toshiba 12,729

Renesas Electronics 10,648

Qualcomm 10,198

STMicroelectronics 9,735

Hynix 9,293

Micron Technology 7,365

Broadcom 7,160

Advanced Micro Devices (AMD) 6,436

Infineon Technologies 5,312

15.6%

9.2%

4.1%

3.4%

3.0%

1.7%

2.1%

2.3%

3.3%

3.1%

4.5%

2.4%

Renesas Electronics 10,648


Bit Ranking

8-bit No.1

16-bit No.1

32-bit No.1

Year 2011

34% Market Share

Source: Gartner’s "2011 Global Semiconductor Market Share", published on March 31, 2012. Above chart is developed by Renesas Electronics based on Gartner’s data.

The world's No.1 MCU supplier, accounted for 34% of total market share. (2011)

Global Microcontroller Market Position

MUS$/Year

1509

1113 1100973 961 938

683 593 508

Freescale Infineon Atmel TI Microchip STMicro Fujitsu Samsung NXP

4299


Renesas Electronics Business Direction

Green Technology Multimedia Integrated Technology

World’s No.1 or No.2

- 8-bit MCU

- 16-bit MCU

- 32-bit MCU

- Automotive MCU

- Secure MCU

- Power MOSFET- IPD - IGBT - Opto Electronics Devices

(LD, Coupler) - Motor Driver- LED Driver- LCD Driver

- Handset /RFIC- Special-purpose processor- DTV/STB SoC- Consumer/Industrial ASIC - Network storage devices- USB3.0

MCU Analog & Power Devices SoC

Automotive Electronics Automotive Electronics

Infrastructure Industry, Embedded System

Infrastructure Industry, Embedded System Cloud-ComputingCloud-Computing

CloudFamily

Handset

Global Business - 3 Focused Product Markets

#1

#1

#1

#1

#1

#2 #1

#1

#2

#1


Towards a Smart Society

Contribute to realize a Smart Community which enables a convenient, safe, and energy saving life by leveraging the synergy of Analog & Power devices, our strong MCU and SoC.

スマートグリッド

Smart Factory

Smart Building

Smart CarSmart Society

Smart Home

Smart Grid

Smart School

Smart Store

Power Plant

Solar/Wind- Generated Power Plant

Energy Management

Smart Meter

Book Map Movie

Internet

ITS

Smart Parking

Smart Transportation

Next-Generation Service Station

Electric Grid


Smart Home Solution

•Solution for power conditioner.•Higher efficiency with MCU + power

semiconductor.

Solar power Solar power Solar power

General

Inverter home applianceInverter home applianceInverter home appliance

Power meterPower meterPower meter

•MCU for inverter control.•Suggest power semiconductor and, IC for

power factor improvement.

•Solution for power meter. (measurement,communication.)

•Measure power consumption of homeappliances with low cost.

•Long lasting battery by low power MCU.•Direct connection to various sensors.

Healthcare equipmentHealthcare equipmentHealthcare equipment

•Wireless solution for ZigBee and RF4CE.•Solution for PLC.

NetworkNetworkNetwork

Solar Power generation

Plug-in Hybrid

Inverter home appliance

LED Lighting Inverter

HAN

HAN: Home Area Network

Wind Power generation

Power conditioner Smart meter

http://www.google.co.jp/imgres?imgurl=http://techon.nikkeibp.co.jp/members/DM/DMNEWS/20030624/2/0624shinko.jpg&imgrefurl=http://techon.nikkeibp.co.jp/members/DM/DMNEWS/20030624/2/&usg=__xSncDtOniEdpIqw4_VcxGArrNaU=&h=404&w=315&sz=37&hl=ja&start=1&zoom=1&itbs=1&tbnid=PqdlQYUG8-QsBM:&tbnh=124&tbnw=97&prev=/images%3Fq%3D%25E5%25B0%258F%25E5%259E%258B%25E9%25A2%25A8%25E5%258A%259B%25E7%2599%25BA%25E9%259B%25BB%26hl%3Dja%26sa%3DX%26gbv%3D2%26ndsp%3D20%26tbm%3Disch&ei=NcaKTfePEcjLswbMxqGSCg


Smart Building Solution

Building management system Building management system Building management system

HMI (Touch panel) HMI (Touch panel) HMI (Touch panel)

LED lighting LEDLED lighting lighting

•Totally realize safety control of buildings, higher efficiency of each device and networkmanagement.

•Fine dimming control by MCU.•Provide total solution.

•“Capacitance detection circuit” available. Detection function by hardware reduces 90% of power consumption.

HVAC: Heating, Ventilating, Air Conditioning DALI: Digital Addressable Lighting Interface

Sensor (Detector)Sensor Sensor ((Detector)Detector)•Provide analog-integrated solution with low

power consumption.

Building management system

Ethernet

Server

HVAC

Sensor(Smoke detector)

DALI, etc

Independent communication

Entrance/exit control

Card reader ID card

HMI

LED lighting

Surveillancecamera

General

http://www.google.co.jp/imgres?imgurl=http://www.mie-c.ed.jp/cmatus/img/taiyou1.jpg&imgrefurl=http://www.mie-c.ed.jp/cmatus/kankyou.html&usg=__vp4U_dTq7MNvUBGIrewXAlhbYF0=&h=257&w=328&sz=18&hl=ja&start=82&zoom=1&itbs=1&tbnid=_TlegYP3eZZY2M:&tbnh=92&tbnw=118&prev=/images%3Fq%3D%25E5%25A4%25AA%25E9%2599%25BD%25E5%2585%2589%25E7%2599%25BA%25E9%259B%25BB%25E3%2580%2580%25E3%2582%25B7%25E3%2582%25B9%25E3%2583%2586%25E3%2583%25A0%25E3%2580%2580%25E3%2583%2591%25E3%2583%258D%25E3%2583%25AB%26start%3D80%26hl%3Dja%26sa%3DN%26gbv%3D2%26ndsp%3D20%26tbm%3Disch&ei=g6SKTf6GE8_wsgbstuWdCg


FA computer

PC (setup, maintenance)

General- purpose

inverter motor

USB / Ethernet

AC servo motor

CA

N

Ethernet

Machine controller

MServo motor

IO-Link

Sensor

MInverter motor

HMI

UPS

UPS: Uninterruptible Power Supply

Smart Factory Solution

AC servo/inverter motor ACAC servo/inverter motor servo/inverter motor

Sensor Sensor Sensor

Industrial networkIndustrial networkIndustrial network

•MCU with LCD direct display. •Easy to build network by Ether and USB.

HMIHMHMII

HMI: Human Machine Interface

•Improve productivity and power efficiency byhigher performance and higher accuracy.

•Total control with high accuracy by improvednetwork function and data processingperformance.

•More intelligent sensors: with smaller, lowerpower consumption, and networking features.•Downsizing and eco-friendly Smart Analog.

General

http://www.mitsubishielectric.co.jp/service/melups/products/9800e/entrance.html


Renesas Leading Technologies


MCU

2.1 Renesas Product Strategy for Smart Society

Provide further power efficiency enabling Smart Society

2-chip solutionsSmart Car(including EV/HEV) 2-chip solutionsSmartphone

& Tablet PC 2-chip solutionsSmartSociety

Continuous product launches for efficiency in smart car, phone and social infrastructure

Provide differentiation through full kit solutions: power, analog, MCU and software

Expand overseas influence in Sales, technical support and new product requirements


2.2 Power Innovation in Smart Energy

Power conversion is the critical element of Smart Energy applications

Renesas leads in cutting-edge high efficiency, small size and safe usage

DC/AC DC/AC

AC DC/DCAC/DC AC/DC

LED

DC/AC

AC/DC

Air Con

DC/DCAC/DCAC/DC

TVBattery Charger

Smart Meter

Power Plant

Solar PowerPower Conditioner

EV

PFC IC, SJMOS, IGBTTriac, OptocouplerLED Driver

AC/DC ⇒ DC/DC ⇒ Converter, MOS,Driver MOS DC/AC ⇒

MOS, IGBT, Opto-coupler, HVMOSDriver IC, BMIC

PFC IC: World’s best

efficiency

SJ-MOS: World’s best

efficiency

IGBT: World’s best efficiency VCE


2.3 Technology Development for Low Power

New materials

Strategic Product

Stripe

Super Junction(600V)

Deep TrenchIGBT SiC

GaN

Diode(~1.2KV)J-FET(600V)

MOS(600V)

p

ｎ

Supporting key trends:

Reduced cooling cost

Reduced size

Safety & high reliability

High temperature

Silicon device (Low power process)

Industrial Equipment

Automotive

Consumer Electronics

Comms

MOSFET IGBT


SiC-Diode / SiC FET

High power

High temperature operation

Lower loss

2.4 Foundation for Power Innovation

Power (W)

1

10

100

1k

10k

100 1k 10k 100k 1MFrequency (Hz)

IGBT

Si MOSFET

UPS, Motor control

Train, Industrial equipment

ComputingMobile

ConsumerWashing Machine, Air-Con…

Power conversion

GaN(High Speed)

SiC(High Power)

InverterInverter

DC/DC, PFCDC/DC, PFC

0 00 0 0 0

DCBA210E543F876*

Inv e r te rInv e rt er

0 00 0 0 0

DCBA210E543F876*


0 00 0 0 0

DCBA210E543F876*


0 00 0 0 0

DCBA210E543F876*


Si SiC, GaN

GaN FET

High speed

Lower loss

Innovation based on benefits of new materials: Gallium-Nitride & Silicon-Carbide

600V SiC-Diode now in production – 600V GaN-FET silicon 2014

Automotive


SiC has several benefits over silicon

Fewer cooling devices & less cost

Downsizing of equipment

2.5 Advantage of SiC Devices

High Efficiency Reduced heat lossLower Switching loss and conduction loss

SiC’s physicality High temperature operation

High Efficiency Reduced heat lossLower Switching loss and conduction loss

SiC’s physicality High temperature operation

SiC-SBD

600VUnder MP

Hybrid SiC-JFET

600VWS: end 2012

SiC-MOSFET

600VPlanning

SiC-JFET+Si-MOSFET


trr－VF Characteristicre

vers

e re

cove

ry ti

me

trr(n

s)

0

50

100

0 1 2 3 Forward voltage VF(V)

Low VF(RJU60C series)

Tc=25℃

SiC-SBD (RJS6004TDPP-EJ)

Ultra Fast recovery(RJU605 series)

Conduction Loss

Switc

hing

Los

s2.6 Leading Renesas SiC-SBD Technology

1.0

0.5

0SiC-SBD

15%

Si-FRD

Power loss 15% improved

Market-leading efficiency & low power losses

Higher Efficiency

Tc=25℃

Market-leading efficiency & low power losses


2.7 GaN Device Application Advantage Example

High Efficiency Reduced Heat loss

Reduction in cooling system costs

High Speed Switching Down Sized Peripherals

Higher Speed Switching (GaN:300kHz, Si:100kHz) Smaller Capacitance and Inductance

High Efficiency Reduced Heat loss

Reduction in cooling system costs

High Speed Switching Down Sized Peripherals

Higher Speed Switching (GaN:300kHz, Si:100kHz) Smaller Capacitance and Inductance

2-chip solutionsSwitchingDevice 2-chip solutionsSwitching

Power Supply 2-chip solutionsEndProduct

Present MOSFET

GaN FET package

assumption

Inside of AC

adaptor

Smaller heat radiation system & higher frequency

No adaptor


2.8 Renesas GaN Device Development

Apr 2002 – Mar 2006 (National Project)

Mar 2010 (R&D in NEC Laboratories)

GaN power device R&D stage

Normally-off operation of 600V TEG samples (published in IBDM in 2009)

Normally-off operation of GaN-MOSFET (600V, 10A)

Process line under construction for mass production

May 2012 (Renesas)

High frequency GaN device for communication base station

World record of 400W achieved in W-CDMA standard

Normally-on devices for CATV trunk amplifier released

GaN HEMT (30V) for DC – 1.5GHz wide-band operation with 22dB high gain via cascade amplifier

28GHz maximum frequency, 0.8–1.0A/mm maximum current

2011 (Renesas)

AlGaNキャップ層

ゲートソースドレイン

AlxGa1-xN分極電荷中和層AlGaN電子供給層

GaNチャネル層

AlxGa1-xNバッファ層

Si基板

Al2O3

フィールドプレート

AlGaNキャップ層

ゲートソースドレイン

AlxGa1-xN分極電荷中和層AlGaN電子供給層

GaNチャネル層

AlxGa1-xNバッファ層

Si基板

Al2O3

フィールドプレート

GaN transistor

400W amp.


Renesas A&P Product for High Efficiency System Design


Automotive Mixed Signal

SBSPower SupplyHDD/ODDMotor Driver PFC

Automotive Mixed Signal

SBSPower SupplyHDD/ODDMotor Driver PFC

LV MOSFETHV MOSFETIGBTThyristor

/TRIAC IPD

LV MOSFETHV MOSFETIGBTThyristor

/TRIAC IPD

Opto CouplerLaser DiodeDetector IC RF Switch IC RF TransistorGaAslow-noise FET

Opto CouplerLaser DiodeDetector IC RF Switch IC RF TransistorGaAslow-noise FET

Small LCD Driver

PDP Driver

Small LCD Driver

PDP Driver

Diode TransistorStandard ICSRAM EEPROMReset IC

Diode TransistorStandard ICSRAM EEPROMReset IC

Analog ICAnalog IC Power DevicesPower Devices

SBS: Smart Battery System IPD: Intelligent Power Device

3.1 Green Products of A&P Center

Consumer MarketConsumer Market Automotive MarketAutomotive Market Communication Market

Communication Market

Industrial MarketIndustrial Market

AC ServoAC ServoM

Low power Consumption

Small Package

High Quality

Stable Supply

Optical & High-frequency DevicesOptical & High-frequency Devices

Display DriverDisplay Driver Standard ProductsStandard Products


•1-chip LED driver for various LED bulb(AC power, PFC)

• Total solution for Solar Power with MCU + IGBT & Power Devices

3.2 Renesas in Green Power (Lighting, Solar Power)

Solar Power

• Reference design for Power conditioner

I2C Bass InterfacePH5551A2NA1 (I2C : 3.0V)

PH5553A2NA1 (I2C : 1.8V)

Analog LinearPH5502B2NA1 (230μA@100lx）

PH5503A2NA1 (60μA@100lx）

Developing

TV, PC, Light

TV, LightTV, Light

Mobile

R2A20134/35

1200V/30A～60A

RJK60S series

RJH1CD/Vx series

600V/20A～30A

NEW

NEW

IGBT CouplerIGBT Coupler

IGBTIGBT

SJMOSSJMOS

2.5APS9402

LED LightingAnalog & Power products support Energy Saving

SiC DiodeSiC DiodeRJS6004 series

600V/10A～30ANEW

・Adjust brightness & On/OffAmbient Light Sensor

Smart Home


ＶｃｃＧＮＤＮＣＧＣｏｍ

Inverter UnitPFC* Unit

IGBT

Single package for Sic + IGBT

SiCdiode

IGBTW/W-top-class

PFC performance

High performance of PFC circuit by single package of SiC diode & IGBT

* PFC: Power Factor Correction

IGBT

SiC diode

3.3 Renesas in Home AppliancesRealized high-performance Inverter technology

1.0

0.5

0SiC-SBD

15%

Si-FRD

Power loss 15% improved

SiC-SBD device for consumer market, paring with IGBT device

IGBTIGBT

PFC(Power Factor Correction)

PFC(Power Factor Correction)

Power MOSFETPower MOSFET

Photo CouplerPhoto Coupler#2

#1

Products with W/W-top-class performance

Smart Home


3.4 Renesas in Green & Smart Energy

Power conversion is the critical element of Smart Energy applications Renesas leads in cutting-edge high efficiency, small size and safe usage

DC/AC DC/AC

AC DC/DCAC/DC AC/DC

LED

DC/AC

AC/DC

Air Con

DC/DCAC/DCAC/DC

TVBattery Charger

Smart Meter

Power Plant

Solar PowerPower Conditioner

EV

PFC IC, SJMOS, IGBTTriac, OptocouplerLED Driver

AC/DC ⇒ DC/DC ⇒ Converter, MOS,Driver MOS DC/AC ⇒

MOS, IGBT, Opto-coupler, HVMOSDriver IC, BMIC

PFC IC: World’s best

efficiency

SJ-MOS: World’s best

efficiency

IGBT: World’s best efficiency VCE


3.5 Renesas in Communication

Renesas provide green & lower power & smart component for communication network

Renesas Green Product Inside

Network Power PFC/MOS/IGBT …..

More

End Application DeviceLED,SBS, Power device……..

Switching

Optical Devices in high speed communicationMemory: High speed SRAM/LSRAM,EEPROM


Power Devices MOSFET Technology


Si-FRD

SiC-SBD

Planar structure(conventional type)

SJ structure

Body Diode(1-chip structure)Built-in FRD(1-chip structure)

with Diode

RJUxxxx

RJKxxxx

RJLxxxx

RJKxxSx

RJPxxxx

RJHxxxx

without Diode

Built-in FRD(2-chip structure)

RC-type(Body Diode)

RJHxxxxR

RJSxxxx

Combined products RJQxxxx

Ｎ＋

Ｄ

ＧＳ

PＮ

NN

P

P

4.1 High-Voltage Power Devices by Renesas

MOS-FET

IGBTInsulated Gate

Bipolar Transistor

FRD/SBDFast Recovery Diode

Schottky Barrier Diode

For switchingapplications

For High-currentapplications


2011 2012 2013

600VSJ-MOS

600VSJ-MOS

Hig

h br

eakd

own

volta

ge, H

igh

curr

ent

(FY)

Applying Automotive Market

600V600V High-speed

Including FRD

2014

PDP,UPS, DC/DC Power Supply

:Under planning

Home Appliances

Home Appliances

High Breakdown Voltage900V SJ-MOS

High Breakdown Voltage900V SJ-MOS

4.2 SJ-MOS Developing Roadmap

650-700VSJ-MOS

300VSJ-MOS

FA, AutomotiveMarket

FA, AutomotiveMarket

Solar Power ConditionerMotor Control for FA

HEV, EV

Power supply for TVPower supply for AC/DC

Motor for HA

Applying to wide area application with high-spec deep trench processApplying to wide area application with highApplying to wide area application with high--spec deep trench processspec deep trench process

New Material, Structure GaN

New Material, Structure GaN

Under Development

2015

SJ Structure of Competitor Device

SJ Structure of Renesas device


4.3 Advantages of HV-MOS

SJ-MOS FET・Low Ron (On-resistance)

※Contributing to reduce the loss in the power conversion

・Small Qgd (Required electric charge for Power MOSFET operations)

※Affecting the switching speed

Fast recovery FET・with improved built-in Body Diode→effective for reducing

recovery switching loss→effective for reducing noises

RJK60S5DPK-M0

RJL6020DPK

100

96

92

88

84

Effic

ienc

yh

[%]

Output Power [W]0 100 200 300 400 500

AC90V, Vout=400V, f=65KHzR2A20118A (CRM Interleaved PFC IC)

210ns

130ns130ns

RDS(on) [W]0.01 0.1 1.0 10

1.0

10

100

Qgd

[nC

]

Current Planar type

RJK60S5DPK-M0Super Junction

High

effici

ency

RJL6020DPK

SJSJ by S by S companycompany

SJ bySJ byF companyF company

SJ by SJ by T T comnanycomnany

SJSJ bybyI companyI company

(80 PLUS®certification)(Power Supplies for Servers)

Platinum →

Titanium 94% 96%

(80 PLUS®certification)(Power Supplies for Servers)

Platinum →

Titanium 94% 96%

2%UP!!2%UP!!2%UP!!

RJK5012DPP(500V,12A)

RJRJLL5012DPP5012DPP(500V,12A)(500V,12A)

Top-level Efficiencyof power conversionTop-level Efficiencyof power conversion

with improvedBodyDiode

with regularBodyDiode


4.4 Planar, Trench MOSFET Roadmap

2011 2012 2013

400 to 650VPlanar Process

Conventional Products(AP5H)

400 to 650VPlanar Process

Conventional Products(AP5H)

(FY)

Trench MOSFor Automotive

200-300V

600V Planar Process with

Low cost (AP5H)

600V Planar Process with

Low cost (AP5H)

2014

UPS、DC/DC电源

1500 to 2000VTrench Process

MOSFET

High Breakdown Voltage1200V SiC-FET(New Material)

High Breakdown Voltage1200V SiC-FET(New Material)

150-250VTrench MOSFET

AC/DC Power Supply,LED Lighting

Enhancing Breakdown Voltage Lineup and Reducing CostBy Developing Multi Process Structure Enhancing Breakdown Voltage Lineup and Reducing CostBy Developing Multi Process Structure


MOSFET


MOSFET

2015

150-250VGaN MOS

(New Material)

150-250VGaN MOS

(New Material)

Hig

h br

eakd

own

volta

ge, H

igh

curr

ent

:Under planning

Under Development

Under Development

Under Development


Hig

h Ef

ficie

ncy

WINFET (~25V)

12th Gen.

WINFET (~25V)

12th Gen.

WINFET2 (~25V)

xxth Gen.

WINFET2 (~25V)

xxth Gen.

BEAM (25-30V)

11th Gen.

BEAM (25-30V)

11th Gen.

Ultra High Speed SwitchingUltra High Speed Switching GaNGaN DeviceDevice

JET-MV*(40~100V) 10th Gen.

JET-MV*(40~100V) 10th Gen.

**MV: Middle VoltageMV: Middle Voltage

JET (30V) 10th Gen. JET (30V) 10th Gen.

Next Gen-MV (40~100V) xxth Gen.

Next Gen-MV (40~100V) xxth Gen.

BEAM2 (30V)

13th Gen.

BEAM2 (30V)

13th Gen.

Next Gen (30V)

xxth Gen.

Next Gen (30V)

xxth Gen.

4.5 LV Devices Road Map (High SW Speed)

LowLow GGaatete Charge DrivingCharge Driving

<<WaferWafer Process>Process>

ServerNBPC Router

YearYear

5x65x6 (WPAK)(WPAK)

3x33x3 HWSON3030HWSON3030

3.0x4.63.0x4.6 HWSON3046(Dual)HWSON3046(Dual)

3x33x3 HWSON(DualHWSON(Dual))

4x44x4 QFN24QFN24

6x66x6 QFN40QFN40

Hig

h In

tegr

atio

n

DrMOS*DrMOS*

POLPOL--SiPSiP**

5x65x6 WPAK(DualWPAK(Dual))

8x88x8 QFN56QFN56

minimini--POLPOLCSPCSP

5x55x5 QFN32QFN32

～～2010 2010 2011 2012 2013 2014 2012011 2012 2013 2014 20155

DiscreteDiscrete(Dual)(Dual)

DiscreteDiscrete(Single)(Single)

<Package><Package>**POLPOL--SiP:ControllerSiP:Controller + Hi/Lo + Hi/Lo MOSFETsMOSFETs **DrMOS:DriverDrMOS:Driver + Hi/Lo + Hi/Lo MOSFETsMOSFETs

http://www.dell.com/jp/business/p/poweredge-tower-servers


Perf

orm

ance

UMOS4 4th Gen. UMOS4 4th Gen.




Low RDS(on)UMOS6 Pch

(12~30V) 6th Gen.

UMOS6 Pch (12~30V) 6th Gen.

4.6 LV devices Road Map (Low RDS(on))

GaNGaN DeviceDevice

Mobilephone

PrinterPower tool NBPC

AC adapter



<<WaferWafer Process>Process>

YearYear～～2010 2010 2011 2012 2013 2014 2012011 2012 2013 2014 20155

5x6 5x6 WPAKWPAK5x6 5x6 8pHVSON8pHVSON

5x65x6 SOPSOP--88 3x33x3 (mini(mini--HV)HV)

3x33x3 (HWSON3030)(HWSON3030)

2x52x5 (6pHWSON)(6pHWSON)

2x2.72x2.7 (8pHUSON)(8pHUSON)

1.5x1.51.5x1.5 4pEFLIP4pEFLIP

2x22x2(Dual)(Dual) ((6pHUSON2020)6pHUSON2020)

CSPCSP

Hig

h In

tegr

atio

n

for Mobile Phonefor Mobile Phoneand Tablet PCand Tablet PC

for consumer for consumer equipmentequipment

for NBPC for NBPC Li+ batteryLi+ battery

66pEFLIPpEFLIP

2x22x2((SingleSingle))(6pHUSON2020)(6pHUSON2020)

66pEFLIPpEFLIP

4pEFLIP4pEFLIP

<PKG><PKG>

1.6x1.61.6x1.6 4pEFIP4pEFIP


4.7 DrMOS History & Roadmap

2003

DrMOS initial Spec.1.0(8x8 QFN)

2004DrMOS Spec. 1.0

2007DrMOS Spec. 3.0(6x6 QFN)

2004R2J20601NP(1st Generation)

2006R2J20602NP(2nd Generation)

2007R2J20604NP(PWM 3.3V)

2009R2J20605NP(8 x 8 mm)R2J20651NP(6 x 6 mm)

2004Dec.PIP212(Philips)

- Fairchild- Vishay- Infineon

Renesas is the first DrMOS vendor, and always running as a top supplier

2010R2J20652ANPR2J20653ANP(6 x 6 mm)

DrMOS Spec. 4.0(6x6 QFN)

2010-2011R2J20654NPR2J20655NPR2J20656ANPR2J20657NPR2J20658NP…(6 x 6 mm)

IntelVR11.x

Other suppliers

- AOS- On-Semi

IntelVR12

DrMOS

IntelVR12.5/12.6

2010

2007R2J20701NP(8 x 8 mm)

POL-SiP(Point of Load- System in Package)

2009R2J20702NP

(8 x 8 mm)

2010R2J20751NP(6 x 6 mm)

(= Integrated Driver-MOSFET)

2012R2J206X(6 x 6 mm)

For 2013 Model …

2012R2J207xx

Higher Performance Lower Cost, High Freq.

Underdevelopment

Mini SizeSimple function

2003

DrMOS initial Spec.1.0(8x8 QFN)

2004DrMOS Spec. 1.0

2007DrMOS Spec. 3.0(6x6 QFN)

2009R2J20605NP(8 x 8 mm)R2J20651NP(6 x 6 mm)

DrMOS Spec. 4.0(6x6 QFN)

2010-2011R2J20654NPR2J20655NPR2J20656ANPR2J20657NPR2J20658NP…(6 x 6 mm)

IntelVR11.x

IntelVR12

DrMOS

IntelVR12.5/12.6

2010

2012R2J206X(6 x 6 mm)

Higher Performance Lower Cost, High Freq.


Vin

DrMOS = Driver IC + Power MOSFET x 2

Driver

Driver

Controller

QFN 56pin (8x8mm)Small Area/Saving Space

Lower Loss/High Efficiency

Higher Switching

Easy for PCB Power Design

Combine and

Optimize

QFN 40pin (6x6mm)or

3chip in 1 PKG

Driver IC HighMOSFET

Low MOSFET

4.8 Integrated Power Solution DrMOS

+

•Voltage Regulator


Power Device IGBT Technology


5.1 IGBT Developing Roadmap

2010 2011 2012

G6H 600VFast & Low Vce(sat)

G6HG6H 600V600VFast & Low Fast & Low Vce(satVce(sat))

(FY)2013 2014

RJH60Fx

G6H 600VLong Time Short

Circuit Withstand Time (Up to 8us)

G6HG6H 600V600VLong Time Short Long Time Short

Circuit Withstand TimeCircuit Withstand Time(Up to (Up to 8us8us))

G6H-RC 600VIncluding Body DiodeG6H-RC 600VIncluding Body Diode

G7H650V

G7H650V

G7H650VGG77HH66550V0V

G8H650VG8HG8H66550V0V

••TrenchTrench••Thin WaferThin Wafer••Cell Structure OptimizationCell Structure Optimization

600V

>1,100V

2015

G6H-RC1,100-1,350V

Including Body Diode

G6HG6H--RCRC1,1,100100--1,3501,350VV

Including Including Body DiodeBody Diode

G7H1,250V

Low Vce(sat)

G7H1,250V

Low Vce(sat)

G7H1,800VGG77HH1,800V1,800V

RJH1BxxR/1CxxR

RJH60AxxR

RJH60RJH60DDxx/Mx/Vx/Mx/Vx

RJH1CVx/Dx/Mx

RJP65S0xx

G9H650VG9HG9H66550V0V

•Stripe Structure

••Narrow PitchNarrow Pitch

•New Core Technology

High Current for Inverter(Up to 400A@25C)

Ultra HighUltra High--SpeedSpeedtftf=40=4030ns(PFC)30ns(PFC)

G8H1,250VG8HG8H1,250V1,250V

G8H2,000VG8HG8H2,000V2,000V

Vce(sat):1.4VVce(sat):1.4V1.2V 1.2V

Technology for High Breakdown VoltageTechnology for High Breakdown Voltage

More Improving PerformanceMore Improving Performance

G6H1,200V

Including FRD

G6HG6H1,2001,200VV

Including FRDIncluding FRD

High Current for High Current for IInverternverter((Up to Up to 400A@25400A@25C)C)

Next GenerationNext Generation

Enhancing High Breakdown Voltage Lineup,Improving Performances of ProductsEnhancing High Breakdown Voltage Lineup,Improving Performances of Products : :Under planning

Hig

h br

eakd

own

volta

ge, H

igh

curr

ent

Under Development

Under Development

Under Development

Next GenerationNext Generation Next GenerationNext Generation





5.2 Advantages of Renesas IGBT

High Efficiency

High Reliability

High-level Technology

■Low Vce(sat)Low saturation voltage between Collector and Emitter.So, low heatgeneration.

■High-speed switching

■Improved spec. of Short-Circuit withstand time(tsc)◆It shows the time in which the part would not break down when the short-circuit would happen.◆The longer tsc, the higher reliability.◆There is the trade-off relationship between Vce and tsc.

■G7H has been developedto exceed G6H performances

■IGBT with new function

Ultra:RJH608xBHigh-speed 60ns@60A

RJH60Fx1.35V@50A

RJH60Dx:5usRJH60Vx:6usRJH60Mx:8us

Reverse-conducting typeBuilt-in Di for flowingregenerative current from motors, coils andso on when IGBTsturned off.RJH60A8xR (Body Diode)

G6H G7HVol. 600V 650VVol. 1200V 1250V

0

Vce(sat) [A]0 1.0 2.0

5

10

15

tsc

[ns]

RJH60Fx

RJH60Dx

RJH60Mx

G7H

RJH60Vx

G6H

SW Off Loss [uJ]400 800 1,6001,200

1.0

1.5

2.0

Comp.D

Comp.A

Comp.BV

ce(s

at) [

V]

Comp.C

G7H

G6H

G5H

2.5

Ic[A

]

0

20

40

60

80

100

Vce(sat) [V]0 1.0 2.0 3.0

Comp.B

Comp.A

Comp.DComp.C

HighHighEfficiencyEfficiency

G6H

G7Htf(Fall time)Speed-up

G6H G7H 10us min.


Thin Wafer Technology enables high efficiency solutions

5.3 IGBT Application Map

2010 2011

RJH1BF Series

Short Circuit Capability

RJH1CD/V (5s) / RJH1CM(10s) series

G7H

1600V and up

1350V

1200V

1100V

600V

RJH1CF/C D/CM/CV

Series

RJH1DF Series

RJH1F series High Speed

Short Circuit CapabilityRJH60D/A8x(5s) RJH60M(10s)

Package IntegrationRJQ series

G6HReverse Conducting

RJH60FXR Series

2012

Application-optimised characteristics


5.4 Renesas IGBT Lineup Outline


Power Device FRD Technology


6.1 Si-FRD, SiC-SBD Roadmap

2011 2012 2013

600VU-FRD1”C” Series

600VU-FRD1”C” Series

(FY)

600VSiC-SBD

Multi Chip Device

600VSiC-SBD

Multi Chip Device

2014

1200VSiC-SBD

300-600VU-FRD2”5” Series

Inverter for HA, LED LightingLow VF 50ns

Moving forward High Performance and Enlarging SiC Wafer Size, for HA and FA Inverter Moving forward High Performance and Enlarging SiC Wafer Size, for HA and FA Inverter

1800VSiC-SBD1800VSiC-SBD

2015

600VU-FRD3

High Breakdown Voltage

600VSiC-SBD

High-speed Motor, PFCUltra High-speed trr 25ns

Solar Power Conditioner, UPSLow VF 35nsRJU60xx

650V, 1250VFRD, with Low EMI

Ultra High Speed Inverter, PFCUltra High Speed trr 15nsRJS6004/6005

RJQ6020/21/22 1800VFRD, with Low EMI (Soft-Recovery FRD)

SiC-SBD Enlarging Wafer Size

High Current 50A to 200ARJU65Ex,RJU1CEx

:Under planning

Hig

h br

eakd

own

volta

ge, H

igh

curr

ent

Under Development

Under Development

Under Development

Under Development


Qrr

IF=2.0Adi/dt=20A/sTc=250C

80ns/div

RJU60C3trr=50nsQrr=48nC

RJU6052trr=25nsQrr=4.0nC

6.2 Strength of Renesas Si-FRD, SiC-SBD

Focusing on Low VF Focusing on Low VF Focusing on Low VF

VF [V]0 1.0 2.0 3.0

0

Trr [

ns] 50

SiC-SBD

“C” Series (U-FRD)

“5” Series(U-FRDII)

VF [V]0 1.0 2.0 3.0

Tc=25C

IF[V

]

0.1

1.0

10

100 Company DCompany E

Company F

Renesas(RJU60C3)

““SiCSiC--SBDSBD”” SiSi--FRDFRD““55”” SeriesSeries

SiSi--FRDFRD““CC”” SeriesSeries

Focusing on High-SpeedFocusing on HighFocusing on High--SpeedSpeed

Reducing Conduction LossReducing Conduction Loss Reducing Switching LossReducing Switching Loss

High Performance (Low VF, High-Speed) High PerformanceHigh Performance (Low VF, High(Low VF, High--Speed)Speed)

Better

Better

InverterServer

<Note>Generally, there are a Trade-Off relationship between VF and Trr. When Trr become faster, VF become high.It is important to select products that is suitable for requirement of application.

<Note>Generally, there are a Trade-Off relationship between VF and Trr. When Trr become faster, VF become high.It is important to select products that is suitable for requirement of application.

Reducing Conduction LossReducing Conduction Loss Reducing Switching LossReducing Switching Loss


6.3 FRD Reverse Recovery Characteristic

Suitable for communication product!


6.4 FRD Lineup Outline

Other P/N, Please refer to Renesas selection guide


Photocoupler Technology


7.1 Renesas Photocoupler

High Endurance against Thermal Shock

Pb Free

Wide Variety of Lineups

Safety Standards

All series Photocopier Maker


7.2 Photocoupler Development Roadmap


7.3 Transistor Photocoupler


7.4 High Speed Photocoupler


7.5 Application Example - Inverter/AC Servo


400V⇒690V

AC ServoAC ServoAC ServoAC Servo

InverterPower Conditioner600V⇒1000V

14.5mm

Now in Mass Production:- PS9905 (IGBT driver) - PS9924 (High Speed 10Mb/s)

Mounting Area

Creepage

Figure

Company A RENESAS

13mm 14.5mm204mm 112mm2 2

55% Reduction

Higher safety, higher temperature & higher working voltage

7.6 Application Optimisation: Optocoupler

Renesas’ 14.5mm creep age distance contributes to developing smaller facilities:

- Large capacity motor drives - Inverters - AC Servos - Power conditioners


Others Standard Products


8.1 Renesas SRAM Products


8.2 SRAM Roadmap

Other P/N, please refer to selection guide


APPLICATION Examples


HV Power Device UPS Application

UPS (Half Bridge Circuit)

～

Filter

Filter

MCU

～

Battery Gate DriverCharging BatteryRJK50xx

InputAC100V

OutputAC100V

ConverterRJK60xx

InverterRJK60xx

Boosting (DC/DC)RJK10xx


*:PV: Photo Voltaic

System RelatedAC Output

Holedevice

I/O Port

TemperatureSensor

MCU for System Control

Gate Driver

Reset IC

InverterRJH60Dx

Boost ChopperRJH608xBRJH60Fx

EEPROM

*1

Gate Driver

HoleDevice

HoleDevice

HoleDevice

PV Module*

辅助电源

HighReliability

HighEfficiency

HV Power Device Solar Application

Solar system for Home Usage


IC

IGBTRJH60FxorRJH608xB

IGBTRJH60Fx

Photo couplerPS9305PS9506

R2A2011X

OP AmpHA1630XXUPC358

V850､SH7149 Microcomputer support RNA519XX

Heat sensor

EEPROMEEPROMR1EX24XX

Heating coil

Photo couplerPS9305PS9506

Power SupplyPFC Circuit

Microcomputer

PFC IC

Power sensor

High EfficiencyIH Cocker

HV Power Device IH Cooker Application

High Efficiency

＋－

＋ｰ


Motor

<Inverter>

<PFC>

Opto coupler

MCU

PWM

PFC-IC

PS9306,PS9506PS9305,PS9505

PFC Power Supply + Inverter Circuit for Motor ControlFRDRJU60Cx / RJU605x series

Inverter IGBTRJH60Dx

PFC-IGBTRJH60Fx/G6Hor RJH608xB

HV Power Device PFC Application

building analog & digital power supplies using renesas...

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