buk7k134-100e - nexperia · 2018. 4. 4. · buk7k134-100e cs•as(ur]5052ubq5lll(uddv6(s6s(tsn...

BUK7K134-100EDual N-channel 100 V, 121 mΩ standard level MOSFET2 September 2015 Product data sheet

1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.

2. Features and benefits• Dual MOSFET• Q101 Compliant• Repetitive avalanche rated• Suitable for thermally demanding environments due to 175 °C rating• True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

3. Applications• 12 V, 24 V and 48 V Automotive systems• Motors, lamps and solenoid control• Transmission control• Ultra high performance power switching

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 - - 9.8 A

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 32 W

Static characteristics FET1 and FET2

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 97 121 mΩ

Dynamic characteristics FET1 and FET2

QGD gate-drain charge ID = 5 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 13; Fig. 14

- 4.3 - nC

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK7K134-100EDual N-channel 100 V, 121 mΩ standard level MOSFET

BUK7K134-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 2 September 2015 2 / 13

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S1 source1

2 G1 gate1

3 S2 source2

4 G2 gate2

5 D2 drain2

6 D2 drain2

7 D1 drain1

8 D1 drain1

321 4

678 5

LFPAK56D (SOT1205)

D1

mbk725

G1S1

D1 D2

G2S2

D2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK7K134-100E LFPAK56D Plastic single ended surface mounted package(LFPAK56D); 8 leads

SOT1205

7. MarkingTable 4. Marking codesType number Marking code

BUK7K134-100E 713410E

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage RGS = 20 kΩ - 100 V

VGS gate-source voltage Tj ≤ 175 °C; DC -20 20 V

Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 32 W

Tmb = 25 °C; VGS = 10 V; Fig. 2 - 9.8 AID drain current

Tmb = 100 °C; VGS = 10 V; Fig. 2 - 6.9 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 39 A





Symbol Parameter Conditions Min Max Unit

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 ��C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode FET1 and FET2

IS source current Tmb = 25 °C - 9.8 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 39 A

Avalanche Ruggedness FET1 and FET2

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 9.8 A; Vsup ≤ 100 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped;Fig. 4

[1][2] - 10.9 mJ

[1] Refer to application note AN10273 for further information[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 1. Normalized total power dissipation as afunction of mounting base temperature

003aak388

0 25 50 75 100 125 150 175 2000

2

4

6

8

10

12

Tmb (°C)

IDID(A)(A)

Fig. 2. Continuous drain current as a function ofmounting base temperature





003aak387

1 10 102 10310-2

10-1

1

10

102

VDS (V)

IDID(A)(A)

DCDC

100 ms100 ms10 ms10 ms1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / IDLimit RDSon = VDS / ID

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

003aak389

10-3 10-2 10-1 1 1010-2

10-1

1

10

102

tAL (ms)

IALIAL(A)(A)

(1)(1)

(2)(2)

(3)(3)

Fig. 4. Avalanche rating; avalanche current as a function of avalanche time

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - - 4.68 K/W

Rth(j-a) thermal resistancefrom junction toambient

Minimum footprint; mounted on aprinted circuit board

- 95 - K/W





003aaj557

single shot

0.2

0.1

0.05

10-2

10-1

1

10

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb) (K/W) δ

= 0.5

0.02

tpT

P

t

tpT

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics FET1 and FET2

ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 9; Fig. 10

2.4 3 4 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 10

1 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 10

- - 4.5 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 11 - 97 121 mΩRDSon drain-source on-stateresistance VGS = 10 V; ID = 5 A; Tj = 175 °C;

Fig. 12; Fig. 11- 260 335 mΩ

Dynamic characteristics FET1 and FET2

QG(tot) total gate charge - 10.5 - nC

QGS gate-source charge - 2.4 - nC

QGD gate-drain charge

ID = 5 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 13; Fig. 14

- 4.3 - nC





Symbol Parameter Conditions Min Typ Max Unit

Ciss input capacitance - 423 564 pF

Coss output capacitance - 57 69 pF

Crss reverse transfercapacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 15

- 41 56 pF

td(on) turn-on delay time - 4.3 - ns

tr rise time - 5.5 - ns

td(off) turn-off delay time - 8.6 - ns

tf fall time

VDS = 80 V; RL = 15 Ω; VGS = 10 V;RG(ext) = 5 Ω; Tj = 25 °C

- 5.8 - ns

Source-drain diode FET1 and FET2

VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.82 1.2 V

trr reverse recovery time - 33.4 - ns

Qr recovered charge

IS = 5 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 50 V; Tj = 25 °C - 45.1 - nC

003aak381

0 1 2 3 40

2

4

6

8

10

VDS (V)

IDID(A)(A)

4 V4 V

VGS = 4.5 VVGS = 4.5 V

5 V5 V5.5 V5.5 V10 V10 V

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

003aak380

0 4 8 12 16 200

100

200

300

400

VGS (V)

RDSonRDSon(mΩ)(mΩ)

Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values





003aak382

0 1 2 3 4 5 6 70

4

8

12

16

20

VGS (V)

IDID(A)(A)

Tj = 25°CTj = 25°C175°C175°C

Fig. 8. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

003aah028

10-6

10-5

10-4

10-3

10-2

10-1

0 2 4 6VGS(V)

ID(A)

maxtypmin

Fig. 9. Sub-threshold drain current as a function ofgate-source voltage

003aah027

0

1

2

3

4

5

-60 0 60 120 180Tj (°C)

VGS(th)(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

003aak386

0 2 4 6 8 100

50

100

150

200

250

300

ID (A)

RDSonRDSon(mΩ)(mΩ)

4.5 V4.5 V

5 V5 V

5.5 V5.5 V

VGS = 10 VVGS = 10 V

Tj = 25 °C; tp = 300 μs

Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values





003aaj819

0

0.6

1.2

1.8

2.4

3

-60 0 60 120 180Tj (°C)

a

Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature

003aaa508

VGS

VGS(th)

QGS1

QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 13. Gate charge waveform definitions

003aak383

0 2 4 6 8 10 120

2

4

6

8

10

QG (nC)

VGSVGS(V)(V)

80 V80 V

VDS = 14 VVDS = 14 V

Fig. 14. Gate-source voltage as a function of gatecharge; typical values

003aak384

10-1 1 10 10210

102

103

104

VDS (V)

CC(pF)(pF)

CissCiss

CossCoss

CrssCrss

Fig. 15. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues





003aak385

0 0.2 0.4 0.6 0.8 1 1.20

4

8

12

16

20

VSD (V)

ISIS(A)(A)

Tj = 25°CTj = 25°C

175°C175°C

Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values





11. Package outline

ReferencesOutlineversion

Europeanprojection Issue dateIEC JEDEC JEITA

SOT1205

sot1205_po

14-08-2114-10-28

Unit

mmmaxnommin

1.05

1.02

0.1

0.0

4.4

4.1

0.25

0.19

0.30

0.24

4.70

4.45

5.30

4.95

0.85

0.60

0.85

0.40

A

Dimensions

Note1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

Plastic single ended surface mounted package LFPAK56D; 8 leads SOT1205

A1 b

0.50

0.35

b1 c c1 D(1)

0.18°

0°

y θD1(1)

4.55

4.35

3.5

3.4

D2(ref) E

(1) E1(1)

1.8

1.6

E2 e

1.27

H

6.2

5.9

L

1.3

0.8

L1

0.55

0.30

Lp

0.25

w

0 2.5 5 mm

scale

detail X

A1 C

Lp

θ

Cy

E2

D2

E1

D1mounting

base

c X

A

c1

A

e b(8x) w A

D

E

H

L

L1

b1

1 2 3 4

Fig. 17. Package outline LFPAK56D (SOT1205)





12. Legal information

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Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

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Product[short] datasheet

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13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................511 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 02 September 2015

1. General description2. Features and benefits3. Applications4. Quick reference data5. Pinning information6. Ordering information7. Marking8. Limiting values9. Thermal characteristics10. Characteristics11. Package outline12. Legal information