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  • BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK568 May 2013 Product data sheet

    1. General descriptionStandard level N-channel MOSFET in an LFPAK56 (Power SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC Q101standard for use in high performance automotive applications.

    2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 C

    3. Applications 12 V, 24 V and 48 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

    4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

    VDS drain-source voltage Tj 25 C; Tj 175 C - - 100 V

    ID drain current VGS = 10 V; Tmb = 25 C; Fig. 1 - - 19 A

    Ptot total power dissipation Tmb = 25 C; Fig. 2 - - 64 W

    Static characteristics

    RDSon drain-source on-stateresistance

    VGS = 10 V; ID = 5 A; Tj = 25 C; Fig. 11 - 44 65 m

    Dynamic characteristics

    QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 80 V;Tj = 25 C; Fig. 13; Fig. 14

    - 7 - nC

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 2 / 13

    5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

    1 S source

    2 S source

    3 S source

    4 G gate

    mb D mounting base; connected todrain

    mb

    1 2 3 4

    LFPAK56; Power-SO8 (SOT669)

    S

    D

    G

    mbb076

    6. Ordering informationTable 3. Ordering information

    PackageType number

    Name Description Version

    BUK7Y65-100E LFPAK56;Power-SO8

    Plastic single-ended surface-mounted package (LFPAK56;Power-SO8); 4 leads

    SOT669

    7. MarkingTable 4. Marking codesType number Marking code

    BUK7Y65-100E 76510E

    8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

    VDS drain-source voltage Tj 25 C; Tj 175 C - 100 V

    VDGR drain-gate voltage RGS = 20 k - 100 V

    VGS gate-source voltage Tj 175 C; DC -20 20 V

    Tmb = 25 C; VGS = 10 V; Fig. 1 - 19 AID drain current

    Tmb = 100 C; VGS = 10 V; Fig. 1 - 13.4 A

    IDM peak drain current Tmb = 25 C; pulsed; tp 10 s; Fig. 4 - 76 A

    Ptot total power dissipation Tmb = 25 C; Fig. 2 - 64 W

    Tstg storage temperature -55 175 C

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 3 / 13

    Symbol Parameter Conditions Min Max Unit

    Tj junction temperature -55 175 C

    Source-drain diode

    IS source current Tmb = 25 C - 19 A

    ISM peak source current pulsed; tp 10 s; Tmb = 25 C - 76 A

    Avalanche ruggedness

    EDS(AL)S non-repetitive drain-sourceavalanche energy

    ID = 19 A; Vsup 100 V; RGS = 50 ;VGS = 10 V; Tj(init) = 25 C; unclamped;Fig. 3

    [1][2] - 25.3 mJ

    [1] Single-pulse avalanche rating limited by maximum junction temperature of 175 C.[2] Refer to application note AN10273 for further information.

    003aai670

    0 30 60 90 120 150 1800

    5

    10

    15

    20

    Tj (C)

    IDID(A)(A)

    Fig. 1. Continuous drain current as a function ofmounting base temperature

    Tmb (C)0 20015050 100

    03aa16

    40

    80

    120

    Pder(%)

    0

    Fig. 2. Normalized total power dissipation as afunction of mounting base temperature

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 4 / 13

    003aai671

    10-2

    10-1

    1

    10

    102

    10-3 10-2 10-1 1 10tAL(ms)

    IAL(A)

    (1)

    (2)

    (3)

    Fig. 3. Avalanche rating; avalanche current as a function of avalanche time

    003aaj807

    1 10 102 10310-2

    10-1

    1

    10

    102

    VDS (V)

    IDID(A)(A)

    DCDC

    100 ms100 ms10 ms10 ms1 ms1 ms

    100 us100 us

    tp = 10 ustp = 10 us

    Limit RDSon = VDS / IDLimit RDSon = VDS / ID

    Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

    9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

    Rth(j-mb) thermal resistancefrom junction tomounting base

    Fig. 5 - - 2.31 K/W

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 5 / 13

    003aai358

    10-6 10-5 10-4 10-3 10-2 10-1 110-2

    10-1

    1

    10

    tp (s)

    Zth(j-mb)Zth(j-mb)(K/W)(K/W)

    P

    ttpT

    tp = T

    single shotsingle shot

    = 0.5 = 0.5

    0.20.2

    0.10.1

    0.050.05

    0.020.02

    Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

    10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

    Static characteristics

    ID = 250 A; VGS = 0 V; Tj = 25 C 100 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 A; VGS = 0 V; Tj = -55 C 90 - - V

    ID = 1 mA; VDS = VGS; Tj = 25 C;Fig. 9; Fig. 10

    2.4 3 4 V

    ID = 1 mA; VDS = VGS; Tj = -55 C;Fig. 9

    - - 4.5 V

    VGS(th) gate-source thresholdvoltage

    ID = 1 mA; VDS = VGS; Tj = 175 C;Fig. 9

    1 - - V

    VDS = 100 V; VGS = 0 V; Tj = 25 C - 0.03 1 AIDSS drain leakage current

    VDS = 100 V; VGS = 0 V; Tj = 175 C - - 500 A

    VGS = 20 V; VDS = 0 V; Tj = 25 C - 2 100 nAIGSS gate leakage current

    VGS = -20 V; VDS = 0 V; Tj = 25 C - 2 100 nA

    VGS = 10 V; ID = 5 A; Tj = 25 C; Fig. 11 - 44 65 mRDSon drain-source on-stateresistance VGS = 10 V; ID = 5 A; Tj = 175 C;

    Fig. 11; Fig. 12- - 180 m

    Dynamic characteristics

    QG(tot) total gate charge - 17.8 - nC

    QGS gate-source charge - 3.4 - nC

    QGD gate-drain charge

    ID = 5 A; VDS = 80 V; VGS = 10 V;Tj = 25 C; Fig. 13; Fig. 14

    - 7 - nC

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 6 / 13

    Symbol Parameter Conditions Min Typ Max Unit

    Ciss input capacitance - 768 1023 pF

    Coss output capacitance - 99.5 119.4 pF

    Crss reverse transfercapacitance

    VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 C; Fig. 15

    - 74.2 101.7 pF

    td(on) turn-on delay time - 5.3 - ns

    tr rise time - 7.5 - ns

    td(off) turn-off delay time - 12.4 - ns

    tf fall time

    VDS = 80 V; RL = 10 ; VGS = 10 V;RG(ext) = 5 ; Tj = 25 C

    - 8 - ns

    Source-drain diode

    VSD source-drain voltage IS = 5 A; VGS = 0 V; Tj = 25 C; Fig. 16 - 0.82 1.2 V

    trr reverse recovery time - 31.5 - ns

    Qr recovered charge

    IS = 5 A; dIS/dt = -100 A/s; VGS = 0 V;VDS = 25 V; Tj = 25 C - 40.6 - nC

    003aai674

    0

    10

    20

    30

    40

    0 2 4 6VDS(V)

    ID(A)

    VGS(V) = 10

    4.5

    5

    6

    4

    5.5

    Tj = 25 C; tp = 300 s

    Fig. 6. Output characteristics; drain current as afunction of drain-source voltage; typical values

    003aai675

    0 4 8 12 16 200

    20

    40

    60

    80

    100

    VGS (V)

    RDSonRDSon

    Fig. 7. Drain-source on-state resistance as a functionof gate-source voltage; typical values

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 7 / 13

    003aai677

    0 1 2 3 4 5 6 70

    8

    16

    24

    32

    40

    VGS (V)

    IDID(A)(A)

    Tj = 25CTj = 25C175C175C

    Fig. 8. Transfer characteristics; drain current as afunction of gate-source voltage; typical values

    003aah027

    0

    1

    2

    3

    4

    5

    -60 0 60 120 180Tj (C)

    VGS(th)(V)

    max

    typ

    min

    Fig. 9. Gate-source threshold voltage as a function ofjunction temperature

    003aah028

    10-6

    10-5

    10-4

    10-3

    10-2

    10-1

    0 2 4 6VGS(V)

    ID(A)

    maxtypmin

    Fig. 10. Sub-threshold drain current as a function ofgate-source voltage

    003aai680

    0

    25

    50

    75

    100

    0 10 20 30 40ID(A)

    RDSon(m)

    VGS(V) = 10

    75.5 65

    Tj = 25 C; tp = 300 s

    Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values

  • Nexperia B.V. 2017. All rights reserved

    Nexperia BUK7Y65-100EN-channel 100 V, 65 m standard level MOSFET in LFPAK56

    BUK7Y65-100E All information provided in this document is subject to legal disclaimers.

    Product data sheet 8 May 2013 8 / 13

    003aaj819

    0

    0.6

    1.2

    1.8

    2.4

    3

    -60 0 60 120 180Tj (C)

    a

    Fig. 12. Normalized drain-source on-state resis

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