buk9k29-100e · 2017-04-20 · buk9k29-100e aosocnw(_(72(rcccnietecoeocroh nexperia buk9k29-100e...

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BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 March 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with V GS(th) > 0.5 V @ 175 °C 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Start-stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j ≥ 25 °C; T j ≤ 175 °C - - 100 V I D drain current V GS = 5 V; T mb = 25 °C; Fig. 1 - - 30 A P tot total power dissipation T mb = 25 °C; Fig. 2 - - 68 W T j junction temperature -55 - 175 °C Static characteristics FET1 and FET2 R DSon drain-source on-state resistance V GS = 5 V; I D = 5 A; T j = 25 °C; Fig. 12 - 25.1 29 Dynamic characteristics FET1 and FET2 Q G(tot) total gate charge - 54 - nC Q GD gate-drain charge I D = 10 A; V DS = 80 V; V GS = 10 V; T j = 25 °C; Fig. 14 ; Fig. 15 - 10.9 - nC

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Page 1: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

BUK9K29-100EDual N-channel TrenchMOS logic level FET28 March 2013 Product data sheet

1. General descriptionDual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOStechnology. This product has been designed and qualified to AEC Q101 standard for usein high performance automotive applications.

2. Features and benefits• Q101 compliant• Repetitive avalanche rated• Suitable for thermally demanding environments due to 175 °C rating• True logic level gate with VGS(th) > 0.5 V @ 175 °C

3. Applications• 12 V Automotive systems• Motors, lamps and solenoid control• Start-stop micro-hybrid applications• Transmission control• Ultra high performance power switching

4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V

ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 1 - - 30 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 68 W

Tj junction temperature -55 - 175 °C

Static characteristics FET1 and FET2

RDSon drain-source on-stateresistance

VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 25.1 29 mΩ

Dynamic characteristics FET1 and FET2

QG(tot) total gate charge - 54 - nC

QGD gate-drain charge

ID = 10 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 14; Fig. 15 - 10.9 - nC

Page 2: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

Avalanche Ruggedness FET1 and FET2

EDS(AL)S non-repetitive drain-source avalancheenergy

ID = 30 A; Vsup ≤ 100 V; VGS = 5 V;Tj(init) = 25 °C; Fig. 3

[1][2] - - 83 mJ

[1] Refer to application note AN10273 for further information[2] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 S1 source1

2 G1 gate1

3 S2 source2

4 G2 gate2

5 D2 drain2

6 D2 drain2

7 D1 drain1

8 D1 drain1

321 4

678 5

LFPAK56D (SOT1205)

D1

mbk725

G1S1

D1 D2

G2S2

D2

6. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BUK9K29-100E LFPAK56D Plastic single ended surface mounted package (LFPAK56D); 8leads

SOT1205

7. MarkingTable 4. Marking codesType number Marking code

BUK9K29-100E 9291E

Page 3: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 3 / 13

8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

VDGR drain-gate voltage RGS = 20 kΩ; Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V

Tj ≤ 175 °C; DC -10 10 VVGS gate-source voltage

Tj ≤ 175 °C; Pulsed [1][2] -15 15 V

Tmb = 25 °C; VGS = 5 V; Fig. 1 - 30 AID drain current

Tmb = 100 °C; VGS = 5 V; Fig. 1 - 21 A

IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 4 - 118 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 68 W

Tstg storage temperature -55 175 °C

Tj junction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode FET1 and FET2

IS source current Tmb = 25 °C - 30 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 118 A

Avalanche Ruggedness FET1 and FET2

EDS(AL)S non-repetitive drain-sourceavalanche energy

ID = 30 A; Vsup ≤ 100 V; VGS = 5 V;Tj(init) = 25 °C; Fig. 3

[3][4] - 83 mJ

[1] Accumulated Pulse duration up to 50 hours delivers zero defect ppm[2] Significantly longer life times are achieved by lowering Tj and or VGS.[3] Refer to application note AN10273 for further information[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C

Page 4: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 4 / 13

003aaj531

0

10

20

30

40

0 50 100 150 200Tmb(°C)

ID(A)

Fig. 1. Continuous drain current as a function ofmounting base temperature

Tmb (°C)0 20015050 100

03aa16

40

80

120

Pder(%)

0

Fig. 2. Normalized total power dissipation as afunction of mounting base temperature

003aaj659

10-2

10-1

1

10

102

103

104

10-3 10-2 10-1 1 10tAL(ms)

IAL(A)

(1)

(2)

(3)

Fig. 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time, FET1 andFET2

Page 5: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 5 / 13

003aaj530

1 10 102 10310-1

1

10

102

103

VDS (V)

IDID(A)(A)

DCDC

100 ms100 ms10 ms10 ms

1 ms1 ms

100 us100 us

tp = 10 ustp = 10 us

Limit RDSon = VDS / IDLimit RDSon = VDS / ID

Fig. 4. Safe operating area; continuous and peak drain current as a function of drain-source voltage

9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistancefrom junction tomounting base

Fig. 5 - - 2.21 K/W

Rth(j-a) thermal resistancefrom junction toambient

Minimum footprint; mounted on aprinted circuit board

- 95 - K/W

003aaj584

single shot

0.2

0.10.05

10-3

10-2

10-1

1

10

10-6 10-5 10-4 10-3 10-2 10-1 1tp (s)

Zth(j-mb) (K/W) δ = 0.5

0.02

tpT

P

t

tpT

δ =

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

Page 6: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 6 / 13

10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

Static characteristics FET1 and FET2

ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10; Fig. 11

1.4 1.7 2.1 V

ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 10; Fig. 11

0.5 - - V

VGS(th) gate-source thresholdvoltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 10; Fig. 11

- - 2.45 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.02 1 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 175 °C - - 500 µA

VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current

VGS = 10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA

VGS = 5 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 25.1 29 mΩ

VGS = 5 V; ID = 5 A; Tj = 175 °C;Fig. 12; Fig. 13

- 68.02 80 mΩ

RDSon drain-source on-stateresistance

VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 - 22.7 27 mΩ

Dynamic characteristics FET1 and FET2

QG(tot) total gate charge ID = 10 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 14; Fig. 15

- 54 - nC

QGS gate-source charge ID = 10 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 15; Fig. 14

- 5.6 - nC

QGD gate-drain charge ID = 10 A; VDS = 80 V; VGS = 10 V;Tj = 25 °C; Fig. 14; Fig. 15

- 10.9 - nC

Ciss input capacitance - 2727 3637 pF

Coss output capacitance - 169 203 pF

Crss reverse transfercapacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 16

- 106 145 pF

td(on) turn-on delay time - 6.1 - ns

tr rise time - 6.4 - ns

td(off) turn-off delay time - 67.3 - ns

tf fall time

VDS = 80 V; RL = 8 Ω; VGS = 10 V;RG(ext) = 5 Ω; Tj = 25 °C; ID = 10 A

- 35.1 - ns

Source-drain diode FET1 and FET2

VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.78 1.2 V

Page 7: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 7 / 13

Symbol Parameter Conditions Min Typ Max Unit

trr reverse recovery time - 32.7 - ns

Qr recovered charge

IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;VDS = 50 V; Tj = 25 °C - 50.1 - nC

003aaj520

0

30

60

90

120

150

0 10 20 30 40ID (A)

gfs(S)

Fig. 6. Forward transconductance as a function ofdrain current; typical values

003aaj521

0

40

80

120

160

0 2 4 6VGS(V)

ID(A)

Tj = 25 °CTj = 175 °C

Fig. 7. Transfer characteristics: drain current as afunction of gate-source voltage; typical values

003aaj523

0

15

30

45

0 1 2 3 4VDS(V)

ID(A)

VGS(V) =

2.6

2.83.54.5

10

2.4

2.2

3

Fig. 8. Output characteristics: drain current as afunction of drain-source voltage; typical values

003aaj522

0

25

50

75

100

0 10 20 30VGS(V)

RDSon(mΩ)

Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values

Page 8: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 8 / 13

003aah025

0

0.5

1

1.5

2

2.5

3

-60 0 60 120 180Tj (°C)

VGS(th)

(V)

max

typ

min

Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

003aah026

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3VGS (V)

ID(A)

maxtypmin

Fig. 11. Sub-threshold drain current as a function ofgate-source voltage

003aaj528

0

40

60

80

100

10 20 30 40 50ID (A)

RDSon

(mΩ)

4.5

VGS (V) =

10

2.82.6

3 3.5

Fig. 12. Drain-source on-state resistance as a functionof drain current; typical values

003aaj820

0

0.6

1.2

1.8

2.4

3

-60 0 60 120 180Tj (°C)

a

Fig. 13. Normalized drain-source on-state resistancefactor as a function of junction temperature

Page 9: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 9 / 13

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aaj525

0

2

4

6

8

10

0 15 30 45 60QG (nC)

VGS(V)

VDS=

14 V

80 V

Fig. 15. Gate-source voltage as a function of gatecharge; typical values

003aaj526

10-1 1 10 10210

102

103

104

VDS (V)

CC(pF)(pF) CissCiss

CossCoss

CrssCrss

Fig. 16. Input, output and reverse transfer capacitancesas a function of drain-source voltage; typicalvalues

003aaj527

0

20

40

60

0 0.3 0.6 0.9 1.2VSD(V)

IS(A)

Tj = 25 °CTj = 175°C

Fig. 17. Source current as a function of source-drainvoltage; typical values

Page 10: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 10 / 13

11. Package outline

ReferencesOutlineversion

Europeanprojection Issue date

IEC JEDEC JEITA

SOT1205

sot1205_po

13-02-1913-02-21

Unit

mmmaxnommin

1.05 0.1

0.0

4.4

4.1

0.25

0.19

0.30

0.24

4.70

4.453.5

5.30

4.95

0.85 0.85

0.40

A

Dimensions

Note1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.

Plastic single ended surface mounted package (LFPAK56D); 8 leads SOT1205

A1 b

0.50

0.35

b1 c c1 D(1)

0.18°

y θD1(1)

4.8

D2(ref) E(1) E1(1)

1.8

1.6

E2 e

1.27

H

6.2

5.9

L

1.3

0.8

L1

0.55

0.30

Lp

0.25

w

0 2.5 5 mm

scale

detail X

A1C

Lp

θ

Cy

E2

D2

E1

D1mounting

base

c X

A

c1

A

e b(8x) w A

D

E

H

L

L1

b1

1 2 3 4

Fig. 18. Package outline LFPAK56D (SOT1205)

Page 11: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 11 / 13

12. Legal information

12.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

12.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

Page 12: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 12 / 13

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

12.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Page 13: BUK9K29-100E · 2017-04-20 · BUK9K29-100E AoSoCnw(_(72(RccCnIetECoEoCroh Nexperia BUK9K29-100E Dual N-channel TrenchMOS logic level FET All information provided in this document

© Nexperia B.V. 2017. All rights reserved

Nexperia BUK9K29-100EDual N-channel TrenchMOS logic level FET

BUK9K29-100E All information provided in this document is subject to legal disclaimers.

Product data sheet 28 March 2013 13 / 13

13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................39 Thermal characteristics .........................................510 Characteristics .......................................................611 Package outline ................................................... 1012 Legal information .................................................1112.1 Data sheet status ............................................... 1112.2 Definitions ...........................................................1112.3 Disclaimers .........................................................1112.4 Trademarks ........................................................ 12

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 28 March 2013