bundle (1)

150
IL300 www.vishay.com Vishay Semiconductors Rev. 1.7, 23-Sep-11 1 Document Number: 83622 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Linear Optocoupler, High Gain Stability, Wide Bandwidth DESCRIPTION The IL300 linear optocoupler consists of an AlGaAs IRLED irradiating an isolated feedback and an output PIN photodiode in a bifurcated arrangement. The feedback photodiode captures a percentage of the LEDs flux and generates a control signal (I P1 ) that can be used to servo the LED drive current. This technique compensates for the LED’s non-linear, time, and temperature characteristics. The output PIN photodiode produces an output signal (I P2 ) that is linearly related to the servo optical flux created by the LED. The time and temperature stability of the input-output coupler gain (K3) is insured by using matched PIN photodiodes that accurately track the output flux of the LED. FEATURES Couples AC and DC signals 0.01 % servo linearity Wide bandwidth, > 200 kHz High gain stability, ± 0.005 %/°C typically Low input-output capacitance Low power consumption, < 15 mW Isolation test voltage, 5300 V RMS , 1 s Internal insulation distance, > 0.4 mm • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS Power supply feedback voltage/current Medical sensor isolation Audio signal interfacing Isolated process control transducers Digital telephone isolation AGENCY APPROVALS UL file no. E52744, system code H DIN EN 60747-5-2 (VDE 0884) DIN EN 60747-5-5 (pending) available with option 1 • BSI • FIMKO Note (1) Also available in tubes, do not put “T” on the end. A C NC NC C A A C 1 2 3 4 8 7 6 5 K2 K1 i179026_2 V D E i179026 ORDERING INFORMATION I L 3 0 0 - D E F G - X 0 # # T PART NUMBER K3 BIN PACKAGE OPTION TAPE AND REEL AGENCY CERTIFIED/ PACKAGE K3 BIN UL, cUL, BSI, FIMKO 0.557 to 1.618 0.765 to 1.181 0.851 to 1.181 0.765 to 0.955 0.851 to 1.061 0.945 to 1.181 0.851 to 0.955 0.945 to 1.061 DIP-8 IL300 IL300-DEFG - - IL300-EF - IL300-E IL300-F DIP-8, 400 mil, option 6 IL300-X006 IL300-DEFG-X006 - - IL300-EF-X006 IL300-FG-X006 IL300-E-X006 IL300-F-X006 SMD-8, option 7 IL300-X007T (1) IL300-DEFG-X007T (1) IL300-EFG-X007 IL300-DE-X007T IL300-EF-X007T (1) - IL300-E-X007T IL300-F-X007 SMD-8, option 9 IL300-X009T (1) IL300-DEFG-X009T (1) - - IL300-EF-X009T (1) - - IL300-F-X009T (1) VDE, UL 0.557 to 1.618 0.765 to 1.181 0.851 to 1.181 0.765 to 0.955 0.851 to 1.061 0.945 to 1.181 0.851 to 0.955 0.945 to 1.061 DIP-8 IL300-X001 IL300-DEFG-X001 - - IL300-EF-X001 - IL300-E-X001 IL300-F-X001 DIP-8, 400 mil, option 6 IL300-X016 IL300-DEFG-X016 - - IL300-EF-X016 - - IL300-F-X016 SMD-8, option 7 IL300-X017 IL300-DEFG-X017T (1) - - IL300-EF-X017T (1) - IL300-E-X017T IL300-F-X017T (1) SMD-8, option 9 - - - - - - - IL300-F-X019T (1) > 0.1 mm 10.16 mm > 0.7 mm 7.62 mm DIP-8 Option 7 Option 6 Option 9

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Page 1: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 1 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Linear Optocoupler, High Gain Stability, Wide Bandwidth

DESCRIPTIONThe IL300 linear optocoupler consists of an AlGaAs IRLEDirradiating an isolated feedback and an output PINphotodiode in a bifurcated arrangement. The feedbackphotodiode captures a percentage of the LEDs flux andgenerates a control signal (IP1) that can be used to servo theLED drive current. This technique compensates for theLED’s non-linear, time, and temperature characteristics.The output PIN photodiode produces an output signal (IP2)that is linearly related to the servo optical flux created by theLED.The time and temperature stability of the input-outputcoupler gain (K3) is insured by using matched PINphotodiodes that accurately track the output flux of the LED.

FEATURES• Couples AC and DC signals• 0.01 % servo linearity• Wide bandwidth, > 200 kHz• High gain stability, ± 0.005 %/°C typically• Low input-output capacitance• Low power consumption, < 15 mW• Isolation test voltage, 5300 VRMS, 1 s• Internal insulation distance, > 0.4 mm• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS• Power supply feedback voltage/current• Medical sensor isolation• Audio signal interfacing• Isolated process control transducers• Digital telephone isolation

AGENCY APPROVALS• UL file no. E52744, system code H• DIN EN 60747-5-2 (VDE 0884)• DIN EN 60747-5-5 (pending) available with option 1• BSI• FIMKO

Note(1) Also available in tubes, do not put “T” on the end.

A

C NC

NC

C

A A

C

1

2

3

4

8

7

6

5

K2K1

i179026_2

VD E

i179026

ORDERING INFORMATION

I L 3 0 0 - D E F G - X 0 # # T

PART NUMBER K3 BIN PACKAGE OPTION TAPE ANDREEL

AGENCYCERTIFIED/PACKAGE

K3 BIN

UL, cUL, BSI,FIMKO 0.557 to 1.618 0.765 to 1.181 0.851 to 1.181 0.765 to 0.955 0.851 to 1.061 0.945 to 1.181 0.851 to 0.955 0.945 to 1.061

DIP-8 IL300 IL300-DEFG - - IL300-EF - IL300-E IL300-F

DIP-8, 400 mil,option 6 IL300-X006 IL300-DEFG-X006 - - IL300-EF-X006 IL300-FG-X006 IL300-E-X006 IL300-F-X006

SMD-8, option 7 IL300-X007T(1) IL300-DEFG-X007T(1) IL300-EFG-X007 IL300-DE-X007T IL300-EF-X007T(1) - IL300-E-X007T IL300-F-X007

SMD-8, option 9 IL300-X009T(1) IL300-DEFG-X009T(1) - - IL300-EF-X009T(1) - - IL300-F-X009T(1)

VDE, UL 0.557 to 1.618 0.765 to 1.181 0.851 to 1.181 0.765 to 0.955 0.851 to 1.061 0.945 to 1.181 0.851 to 0.955 0.945 to 1.061

DIP-8 IL300-X001 IL300-DEFG-X001 - - IL300-EF-X001 - IL300-E-X001 IL300-F-X001

DIP-8, 400 mil,option 6 IL300-X016 IL300-DEFG-X016 - - IL300-EF-X016 - - IL300-F-X016

SMD-8, option 7 IL300-X017 IL300-DEFG-X017T(1) - - IL300-EF-X017T(1) - IL300-E-X017T IL300-F-X017T(1)

SMD-8, option 9 - - - - - - - IL300-F-X019T(1)

> 0.1 mm

10.16 mm

> 0.7 mm

7.62 mm

DIP-8

Option 7

Option 6

Option 9

Page 2: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 2 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

OPERATION DESCRIPTIONA typical application circuit (figure 1) uses an operationalamplifier at the circuit input to drive the LED. The feedbackphotodiode sources current to R1 connected to the invertinginput of U1. The photocurrent, IP1, will be of a magnitude tosatisfy the relationship of (IP1 = VIN/R1).

The magnitude of this current is directly proportional to thefeedback transfer gain (K1) times the LED drive current(VIN/R1 = K1 x IF). The op-amp will supply LED current toforce sufficient photocurrent to keep the node voltage (Vb)equal to Va.

The output photodiode is connected to a non-invertingvoltage follower amplifier. The photodiode load resistor, R2,performs the current to voltage conversion. The outputamplifier voltage is the product of the output forward gain(K2) times the LED current and photodiode load,R2 (VO = IF x K2 x R2).

Therefore, the overall transfer gain (VO/VIN) becomes theratio of the product of the output forward gain (K2) times thephotodiode load resistor (R2) to the product of the feedbacktransfer gain (K1) times the input resistor (R1). This reducesto

VO/VIN = (K2 x R2)/(K1 x R1).

The overall transfer gain is completely independent of theLED forward current. The IL300 transfer gain (K3) isexpressed as the ratio of the output gain (K2) to thefeedback gain (K1). This shows that the circuit gainbecomes the product of the IL300 transfer gain times theratio of the output to input resistors

VO/VIN = K3 (R2/R1).

K1-SERVO GAINThe ratio of the input photodiode current (IP1) to the LEDcurrent (IF) i.e., K1 = IP1/IF.

K2-FORWARD GAINThe ratio of the output photodiode current (IP2) to the LEDcurrent (IF), i.e., K2 = IP2/IF.

K3-TRANSFER GAINThe transfer gain is the ratio of the forward gain to the servogain, i.e., K3 = K2/K1.

ΔK3-TRANSFER FAIN LINEARITYThe percent deviation of the transfer gain, as a function ofLED or temperature from a specific transfer gain at a fixedLED current and temperature.

PHOTODIODEA silicon diode operating as a current source. The outputcurrent is proportional to the incident optical flux suppliedby the LED emitter. The diode is operated in the photovoltaicor photoconductive mode. In the photovoltaic mode thediode functions as a current source in parallel with a forwardbiased silicon diode.

The magnitude of the output current and voltage isdependent upon the load resistor and the incident LEDoptical flux. When operated in the photoconductive modethe diode is connected to a bias supply which reversebiases the silicon diode. The magnitude of the outputcurrent is directly proportional to the LED incident opticalflux.

LED (LIGHT EMITTING DIODE)An infrared emitter constructed of AlGaAs that emits at890 nm operates efficiently with drive current from 500 μA to40 mA. Best linearity can be obtained at drive currentsbetween 5 mA to 20 mA. Its output flux typically changes by- 0.5 %/°C over the above operational current range.

APPLICATION CIRCUIT

Fig. 1 - Typical Application Circuit

iil300_01

8

7

6

5

K1

1

2

3

4

K2

R1 R2

IL300

Vb

Va+

-

U1Vin

lp1

-

U2

+

lp2

Vout

VCC

VCC

VCC

VCCIF

Vc

+

Page 3: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 3 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolutemaximum ratings for extended periods of the time can adversely affect reliability.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL VALUE UNIT

INPUT

Power dissipation Pdiss 160 mW

Derate linearly from 25 °C 2.13 mW/°C

Forward current IF 60 mA

Surge current (pulse width < 10 μs) IPK 250 mA

Reverse voltage VR 5 V

Thermal resistance Rth 470 K/W

Junction temperature Tj 100 °C

OUTPUT

Power dissipation Pdiss 50 mW

Derate linearly from 25 °C 0.65 mW/°C

Reverse voltage VR 50 V

Thermal resistance Rth 1500 K/W

Junction temperature Tj 100 °C

COUPLER

Total package dissipation at 25 °C Ptot 210 mW

Derate linearly from 25 °C 2.8 mW/°C

Storage temperature Tstg - 55 to + 150 °C

Operating temperature Tamb - 55 to + 100 °C

Isolation test voltage VISO > 5300 VRMS

Isolation resistanceVIO = 500 V, Tamb = 25 °C RIO > 1012 ΩVIO = 500 V, Tamb = 100 °C RIO > 1011 Ω

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

INPUT (LED EMITTER)

Forward voltage IF = 10 mA VF 1.25 1.50 V

VF temperature coefficient ΔVF/Δ°C - 2.2 mV/°C

Reverse current VR = 5 V IR 1 μA

Junction capacitance VF = 0 V, f = 1 MHz Cj 15 pF

Dynamic resistance IF = 10 mA ΔVF/ΔIF 6 ΩOUTPUT

Dark current Vdet = - 15 V, IF = 0 A ID 1 25 nA

Open circuit voltage IF = 10 mA VD 500 mV

Short circuit current IF = 10 mA ISC 70 μA

Junction capacitance VF = 0 V, f = 1 MHz Cj 12 pF

Noise equivalent power Vdet = 15 V NEP 4 x 10-14 W/√Hz

COUPLER

Input-output capacitance VF = 0 V, f = 1 MHz 1 pF

K1, servo gain (IP1/IF) IF = 10 mA, Vdet = - 15 V K1 0.0050 0.007 0.011

Servo current (1)(2) IF = 10 mA, Vdet = - 15 V IP1 70 μA

K2, forward gain (IP2/IF) IF = 10 mA, Vdet = - 15 V K2 0.0036 0.007 0.011

Forward current IF = 10 mA, Vdet = - 15 V IP2 70 μA

K3, transfer gain (K2/K1) (1)(2) IF = 10 mA, Vdet = - 15 V K3 0.56 1 1.65 K2/K1

Page 4: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 4 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.(1) Bin sorting:

K3 (transfer gain) is sorted into bins that are ± 6 % , as follows:Bin A = 0.557 to 0.626Bin B = 0.620 to 0.696Bin C = 0.690 to 0.773Bin D = 0.765 to 0.859Bin E = 0.851 to 0.955Bin F = 0.945 to 1.061Bin G = 1.051 to 1.181Bin H = 1.169 to 1.311Bin I = 1.297 to 1.456Bin J = 1.442 to 1.618K3 = K2/K1. K3 is tested at IF = 10 mA, Vdet = - 15 V.

(2) Bin categories: All IL300s are sorted into a K3 bin, indicated by an alpha character that is marked on the part. The bins range from “A”through “J”.The IL300 is shipped in tubes of 50 each. Each tube contains only one category of K3. The category of the parts in the tube is marked onthe tube label as well as on each individual part.

(3) Category options: standard IL300 orders will be shipped from the categories that are available at the time of the order. Any of the tencategories may be shipped. For customers requiring a narrower selection of bins, the bins can be grouped together as follows:IL300-DEFG: order this part number to receive categories D, E, F, G only.IL300-EF: order this part number to receive categories E, F only.IL300-E: order this part number to receive category E only.

COUPLER

Transfer gain stability IF = 10 mA, Vdet = - 15 V ΔK3/ΔTA ± 0.005 ± 0.05 %/°C

Transfer gain linearityIF = 1 mA to 10 mA ΔK3 ± 0.25 %

IF = 1 mA to 10 mA,Tamb = 0 °C to 75 °C ± 0.5 %

PHOTOCONDUCTIVE OPERATION

Frequency response IFq = 10 mA, MOD = ± 4 mA,RL = 50 Ω BW (- 3 db) 200 kHz

Phase response at 200 kHz Vdet = - 15 V - 45 Deg.

SWITCHING CHARACTERISTICSPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Switching time ΔIF = 2 mA, IFq = 10 mAtr 1 μs

tf 1 μs

Rise time tr 1.75 μs

Fall time tf 1.75 μs

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

COMMON MODE TRANSIENT IMMUNITYPARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Common mode capacitance VF = 0 V, f = 1 MHz CCM 0.5 pF

Common mode rejection ratio f = 60 Hz, RL = 2.2 kΩ CMRR 130 dB

Page 5: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 5 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 2 - LED Forward Current vs. Forward Voltage

Fig. 3 - Servo Photocurrent vs. LED Current and Temperature

Fig. 4 - Normalized Servo Photocurrent vs.LED Current and Temperature

Fig. 5 - Servo Gain vs. LED Current and Temperature

Fig. 6 - Normalized Transfer Gain vs.LED Current and Temperature

Fig. 7 - Amplitude Response vs. Frequency

iil300_02

1.41.31.21.10

5

10

15

20

25

30

35

VF - LED Forward Voltage (V)

I F -

LE

D C

urre

nt (

mA

)

1.0

iil300_04

0 °C25 °C50 °C75 °C

0.1 1 10 100

300

250

200

150

100

50

0

IF - LED Current (mA)

I P1

- S

ervo

Pho

tocu

rren

t (µA

) VD = - 15 V

iil300_06

0 10 15 20 25

3.0

2.5

2.0

1.5

1.0

0.5

0.0

IF - LED Current (mA)

Nor

mal

ized

Pho

tocu

rren

t

Normalized to: IP1 at IF = 10 mA

TA = 25 °CVD = - 15 V

0 °C25 °C50 °C75 °C

5

IF - LED Current (mA)

0.1 1 10 1000

K1-

Ser

voG

ain

-I P

1/I F

0.010

0.008

0.006

0.004

0.002

25°50°75°

100°

17754

iil300_11

0 10 15 20 25

1.010

1.005

1.000

0.995

0.990

IF - LED Current (mA)

K3

- T

rans

fer

Gai

n -

(K2/

K1) 0 °C

25 °C

50 °C

75 °C

Normalized to:IF = 10 mA

TA = 25 °C

5

iil300_12

104 105 106

5

0

- 5

- 10

- 15

- 20

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

RL = 1 kΩ

IF = 10 mA, Mod = ± 2.0 Ma (peak)

RL = 10 kΩ

Page 6: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 6 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 8 - Amplitude and Phase Response vs. Frequency

Fig. 9 - Common-Mode Rejection

Fig. 10 - Photodiode Junction Capacitance vs.Reverse Voltage

APPLICATION CONSIDERATIONSIn applications such as monitoring the output voltage from aline powered switch mode power supply, measuringbioelectric signals, interfacing to industrial transducers, ormaking floating current measurements, a galvanicallyisolated, DC coupled interface is often essential. The IL300can be used to construct an amplifier that will meet theseneeds.

The IL300 eliminates the problems of gain nonlinearity anddrift induced by time and temperature, by monitoring LEDoutput flux.

A pin photodiode on the input side is optically coupled to theLED and produces a current directly proportional to fluxfalling on it. This photocurrent, when coupled to an amplifier,provides the servo signal that controls the LED drive current.

The LED flux is also coupled to an output PIN photodiode.The output photodiode current can be directly or amplifiedto satisfy the needs of succeeding circuits.

ISOLATED FEEDBACK AMPLIFIERThe IL300 was designed to be the central element of DCcoupled isolation amplifiers. Designing the IL300 into anamplifier that provides a feedback control signal for a linepowered switch mode power is quite simple, as thefollowing example will illustrate.

See figure 12 for the basic structure of the switch modesupply using the Infineon TDA4918 push-pull switchedpower supply control cChip. Line isolation are provided bythe high frequency transformer. The voltage monitorisolation will be provided by the IL300.

The isolated amplifier provides the PWM control signalwhich is derived from the output supply voltage. Figure 13more closely shows the basic function of the amplifier.

The control amplifier consists of a voltage divider and anon-inverting unity gain stage. The TDA4918 data sheetindicates that an input to the control amplifier is a highquality operational amplifier that typically requires a + 3 Vsignal. Given this information, the amplifier circuit topologyshown in figure 14 is selected.

The power supply voltage is scaled by R1 and R2 so thatthere is + 3 V at the non-inverting input (Va) of U1. Thisvoltage is offset by the voltage developed by photocurrentflowing through R3. This photocurrent is developed by theoptical flux created by current flowing through the LED.Thus as the scaled monitor voltage (Va) varies it will cause achange in the LED current necessary to satisfy thedifferential voltage needed across R3 at the inverting input.The first step in the design procedure is to select the valueof R3 given the LED quiescent current (IFq) and the servogain (K1). For this design, IFq = 12 mA. Figure 4 shows theservo photocurrent at IFq is found to be 100 mA. With thisdata R3 can be calculated.

iil300_13

dBPhase

Ø -

Pha

se R

espo

nse

(°)

103 104 105 106 107

5

0

- 5

- 10

- 15

- 20

45

0

- 45

- 90

- 135

- 180

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

IFq = 10 mAMod = ± 4.0 mATA = 25 °CRL = 50 Ω

iil300_14

- 130

- 120

- 110

- 100

- 90

- 80

- 70

- 60

F - Frequency (Hz)

CM

RR

- R

ejec

tion

Rat

io (

dB)

106101 102 103 104 105

iil300_15

0

2

4

6

8

10

12

14

Voltage (Vdet)

Cap

acita

nce

(pF

)

0 4 82 6 10

R3Vb

IPI------ 3 V

100 μA------------------ 30 kΩ= = =

Page 7: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 7 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 11 - Isolated Control Amplifier

For best input offset compensation at U1, R2 will equal R3.The value of R1 can easily be calculated from the following.

The value of R5 depends upon the IL300 Transfer Gain (K3).K3 is targeted to be a unit gain device, however to minimizethe part to part Transfer Gain variation, Infineon offers K3graded into ± 5 % bins. R5 can determined using thefollowing equation,

or if a unity gain amplifier is being designed(VMONITOR = VOUT, R1 = 0), the equation simplifies to:

Fig. 12 - Switching Mode Power Supply

Fig. 13 - DC Coupled Power Supply Feedback Amplifier

iil300_16

+

-

Voltagemonitor

R1

R2

To controlinput

ISOAMP+1

R1 R2 x VMONITOR

Va------------------------- - 1 =

R5VOUT

VMONITOR--------------------------- x R3 x R1 R2+( )

R2 x K3-----------------------------------------=

R5 R3K3-------=

iil300_17

Switch Xformer

Switch moderegulatorTDA4918

Isolatedfeedback

Control

110/220main

DC outputAC/DC

rectifierAC/DC

rectifier

iil300_18

8

7

6

5

100 pF4

3

12

8

6

7

K1

VCC

VCC

1

2

3

4

K2

VCC

Vmonitor

R120 kΩ

R230 kΩ

R330 kΩ

R4100 Ω

Vout TocontrolinputR5

30 kΩ

IL300

Vb

Va+

-

U1LM201

Page 8: Bundle (1)

IL300www.vishay.com Vishay Semiconductors

Rev. 1.7, 23-Sep-11 8 Document Number: 83622

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Table 1. Gives the value of R5 given the production K3 bin.

The last step in the design is selecting the LED currentlimiting resistor (R4). The output of the operational amplifieris targeted to be 50 % of the VCC, or 2.5 V. With an LEDquiescent current of 12 mA the typical LED (VF) is 1.3 V.Given this and the operational output voltage, R4 can becalculated.

The circuit was constructed with an LM201 differentialoperational amplifier using the resistors selected. Theamplifier was compensated with a 100 pF capacitorconnected between pins 1 and 8.

The DC transfer characteristics are shown in figure 17. Theamplifier was designed to have a gain of 0.6 and wasmeasured to be 0.6036. Greater accuracy can be achievedby adding a balancing circuit, and potentiometer in the inputdivider, or at R5. The circuit shows exceptionally good gainlinearity with an RMS error of only 0.0133 % over the inputvoltage range of 4 V to 6 V in a servo mode; see figure 15.

Fig. 14 - Transfer Gain

Fig. 15 - Linearity Error vs. Input Voltage

The AC characteristics are also quite impressive offering a- 3 dB bandwidth of 100 kHz, with a - 45° phase shift at80 kHz as shown in figure 16.

TABLE 1 - R5 SELECTION

BINK3 R5 RESISTOR

MIN. MAX. TYP. 1 % kΩA 0.560 0.623 0.59 51.1

B 0.623 0.693 0.66 45.3

C 0.693 0.769 0.73 41.2

D 0.769 0.855 0.81 37.4

E 0.855 0.950 0.93 32.4

F 0.950 1.056 1 30

G 1.056 1.175 1.11 27

H 1.175 1.304 1.24 24

I 1.304 1.449 1.37 22

J 1.449 1.610 1.53 19.4

R4Vopamp - VF

IFq--------------------------------- 2.5 V - 1.3 V

12 mA--------------------------------- 100 Ω= = =

iil300_19

6.05.55.04.54.02.25

2.50

2.75

3.00

3.25

3.50

3.75

Vou

t - O

utpu

t Vol

tage

(V

) Vout = 14.4 mV + 0.6036 x Vin

LM 201 Ta = 25 °C

iil300_20

6.05.55.04.54.0- 0.015

- 0.010

- 0.005

0.000

0.005

0.010

0.015

0.020

0.025

Vin - Input Voltage (V)

Line

arity

Err

or (

%) LM201

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Rev. 1.7, 23-Sep-11 9 Document Number: 83622

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Fig. 16 - Amplitude and Phase Power Supply Control

The same procedure can be used to design isolationamplifiers that accept bipolar signals referenced to ground.These amplifiers circuit configurations are shown infigure 17. In order for the amplifier to respond to a signal thatswings above and below ground, the LED must be prebiased from a separate source by using a voltage referencesource (Vref1). In these designs, R3 can be determined by thefollowing equation.

Fig. 17 - Non-inverting and Inverting Amplifiers

iil300_21

dBPhase

Pha

se R

espo

nse

(°)

103 104 105 106

2

0

- 2

- 4

- 6

- 8

45

0

- 45

- 90

- 135

- 180

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

R3Vref1

IP1-----------

Vref1

K1IFq---------------= =

TABLE 2 - OPTOLINEAR AMPLIEFIERSAMPLIFIER INPUT OUTPUT GAIN OFFSET

Non-inverting

Inverting Inverting

Non-inverting Non-inverting

Inverting

Inverting Non-inverting

Non-inverting Inverting

iil300_22

Vcc

20 pF4

1

2

3

4

8

7

6

5

+ Vref2R5

R672

43

Vo

R4R3

- Vref1

Vin

R1 R2

3 7

6+

+Vcc

100 Ω

6

IL 300

2 - Vcc

- Vcc

Vcc

- Vcc+

Vcc

20 pF4

1

2

3

4

8

7

6

5

+ Vref2

7

24

3

Vout

R4

R3

+ Vref1

Vin

R1 R2

3 7

6+

+ Vcc

100 Ω

6

2 VccVcc

- Vcc

+Vcc

Non-inverting input Non-inverting output

Inverting input Inverting output

IL 300

- Vcc

Vcc

VOUT

VIN------------- K3 x R4 x R2

R3 x R1 x R2( )------------------------------------------= Vref2

Vref1 x R4 x K3

R3------------------------------------------=

VOUT

VIN------------- K3 x R4 x R2 x R5 + R6( )

R3 x R5 x R1 x R2( )-------------------------------------------------------------------------= Vref2

- Vref1 x R4 x R5 + R6( ) x K3

R3 x R6----------------------------------------------------------------------------------=

VOUT

VIN------------- - K3 x R4 x R2 x R5 + R6( )

R3 x R1 x R2( )------------------------------------------------------------------------------= Vref2

Vref1 x R4 x R5 + R6( ) x K3

R3 x R6------------------------------------------------------------------------------=

VOUT

VIN------------- - K3 x R4 x R2

R3 x R1 x R2( )------------------------------------------= Vref2

- Vref1 x R4 x K3

R3----------------------------------------------=

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These amplifiers provide either an inverting or non-invertingtransfer gain based upon the type of input and outputamplifier. Table 2 shows the various configurations alongwith the specific transfer gain equations. The offset columnrefers to the calculation of the output offset or Vref2necessary to provide a zero voltage output for a zero voltageinput. The non-inverting input amplifier requires the use of abipolar supply, while the inverting input stage can beimplemented with single supply operational amplifiers thatpermit operation close to ground.

For best results, place a buffer transistor between the LEDand output of the operational amplifier when a CMOSopamp is used or the LED IFq drive is targeted to operatebeyond 15 mA. Finally the bandwidth is influenced by themagnitude of the closed loop gain of the input and outputamplifiers. Best bandwidths result when the amplifier gain isdesigned for unity.

PACKAGE DIMENSIONS in millimeters

PACKAGE MARKING (this is an example of the IL300-E-X001)

i178010

ISO method A

Pin one ID

3

4

10°

1

24°

3°9

6

5

8

7

0.5270.889

3.3023.810

0.4060.508

7.1128.382

1.0161.270

9.65210.16

0.2030.305

2.7943.302

6.0966.604

0.508 ref. 0.254 ref.

0.254 ref.

2.540

1.270

7.62 typ.

8 min.

0.511.02

7.62 ref.

9.5310.03

0.25 typ.

0.1020.249

15° max.

Option 9

0.350.25

10.1610.92

7.87.4

10.369.96

Option 6

8 min.

7.62 typ.

4.64.1

8.4 min.

10.3 max.

0.7

Option 7

18450

IL300-E

V YWW H 68X001

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Optocoupler

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V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 43

Design Guidelines forOptocoupler Safety Agency Compliance

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Rev. 1.4, 07-Nov-11 1 Document Number: 83743

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www.vishay.com

INTRODUCTION TO ELECTRICAL SAFETYTraditionally, electrical isolation from hazardous voltageshas been the most common application for optocouplerdevices. Other applications for optocouplers includereducing EMI through the elimination of common-modecurrent loops, which are the greatest contributors toradiated emissions in high-speed digital systems. However,isolation is still the predominant role for optocouplers intoday's electronics marketplace.

Electrical isolation is important in modern electronics designas a way of minimizing the likelihood of exposing an enduserto injury from hazardous currents. The currents at whichharm or even death can occur are far lower than mostpeople think. In certain invasive medical operations,currents as low as 80 μA can be fatal and have anacceptable safety limit of 10 μA. These thresholds areoutlined in figure 1.

Fig. 1 - Shock Hazardous Levels

Electrical isolation is typically achieved by one of threemethods: magnetic, capacitive, or electrooptical. All threehave their pros and cons. Magnetic isolation (using anisolation transformer) is probably the longest-establishedmethod of electrical isolation, providing high levels ofisolation at high frequencies in a robust package. Among thedownsides of this method of isolation are a large devicefootprint when compared with other methods and suitabilityonly for AC signal coupling. Due to these characteristics,magnetic coupling is for the most part limited to high-powerAC applications.

Fig. 2 - Magnetic Isolation

The second common method of electrical isolation iscapacitive coupling. The advantages of capacitive couplingare high switching speeds and a relatively small packagefootprint, but to eliminate the need for a floating powersupply on the secondary side, a large capacitance isrequired to transfer energy from the primary to thesecondary side. Thus, the electrical isolation value of thistechnique is greatly diminished by the need for efficientenergy coupling. Consequently, most capacitive couplingisolation schemes have isolation values in the hundreds ofvolts rather than the thousands of volts achievable withother methods.

Fig. 3 - Capacitive Isolation

Another potential isolation method involves the use ofmagneto-resistive sensors. These sensors are able to detectDC as well as AC magnetic fields. However, this is anemerging technology and is susceptible to induced noisefrom extraneous external magnetic fields.

17348

Pain, respiratory paralysis

Burns

Ventricular fibrilliation

Let go current

Perception

1 mA 10 mA 100 mA 1 A 10 A 100 A60 Hz current RMS

17349

V-isolation

V-primary V-secondary

17350

Voltageto

frequency

+–

Frequencyto

voltage

+–

+–

Couplingcapacitance

Secondaryside

voltage

Primaryside

voltage

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Design Guidelines forOptocoupler Safety Agency Compliance

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Optical isolation has many of the best aspects of the formermethods without the drawbacks. Mainly, optical isolationoffers high electrical isolation values, an effective “line in thesand” barrier that hazardous voltages are incapable ofpenetrating. In the case of Vishay’s couplers, these valuesare as high as 8000 V, the highest level in the industry. Thisis achieved with small-footprint packages and high speed;moreover, it is equally effective with AC or DC signals.

Fig. 4 - Electro-Optical Isolation

SAFETY AGENCY STANDARDS OVERVIEWThere are several widely accepted industry standards thatgovern the manufacture and testing of electronicequipment. Probably the most widely known of these inNorth America is Underwriter's Laboratories (UL). UL hastwo types of basic approvals: UL Listing andUL-recognition. The difference is simple but often a subjectof much confusion. The “UL Recognized” mark, optionallyinscribed on the devices themselves, refers to componentsthat have been evaluated to a certain extent by UL and willbe “re-reviewed” by UL for proper incorporation into theend-use equipment. A “UL Listed” mark is placed oncomplete equipment. For example, a computer would be aUL Listed, while the component hard drive would be a ULRecognized part. As seen in the next page, UL wasconcerned enough about potential confusion between themeanings of these two marks that it intentionally made themdistinct from one another.

Fig. 5 - UL Listed/UL Recognized

UL has safety standards for everything that is or possiblycan be manufactured; however, to simplify things, thesestandards can be divided into two groups: systemstandards and component standards. The systemstandards are beyond the scope of this document toaddress in their entirety. Arguably, the most commonlyapplicable system standard in the electronics industry isUL60950, which governs the electrical safety requirementsfor the broad category of information technology equipment(ITE). In addition to information technology, there are alsostandards that deal with other specialty fields of productelectrical safety. Of particular interest to optocoupler designis IEC 60601-1, which governs the safety of medicalequipment. IEC 60601-1 was generated by those in themedical field worldwide, and it is the basis for manycountries’ national standards, such as UL2601-1 in theUnited States. Similarly, UL 60950 has been based on theinternationally generated IEC 60950 and adopted withchanges due to unique national conditions in the UnitedStates, including the National Electrical Code (NEC).

The European Union adopted the IEC-based version asEN 60950. As is the case for all components, optocouplersdo not necessarily need to meet all particular end-usesystem standards, such as IEC 609050 or IEC 60601-1. Intrying to meet any of the specific system standards, it isimportant to know which component parameters createdesign limitations. For safety purposes, these parametersinclude creepage (along a surface) distances, clearance(through air) distances, maximum isolation voltages, andinsulation thicknesses. For the most part, this documentwill deal with standards exclusively dealing with themanufacture and testing of optocouplers. These arecovered under two standards, UL1577 and IEC 60747-5-1,which incorporate and supersede the earlier DIN EN60747-5-5. In addition to these standards, which explicitlydeal with optocouplers, the latest version of IEC 60950-1clauses, 2.10.5.1, 2.10.7, 2.10.8 , ANEX P.1, and ANEX P.2,also address issues that deal with optocouplers directly.

UL 1577The main UL component standard, addressingoptocouplers in the United States is UL 1577, which coversthe safety specifications that pertain to optocouplers inNorth America. This document offers an outline of thespecification and points out the highlights that deal withelectrical safety.

Generally, all tests classified as “type tests” refer to thosetests performed to validate a particular design to a standard.They are conducted by qualified testing laboratories, oftenonly once before serial production begins. This is in contrastto routine tests, also known as 100 % production line tests,which are intended to prevent manufacturing defects fromever leaving the factory. In other words, 100 % production

17351

+–

V-secondaryRL

RFIsolation barrier

V-primary

Viso min. msup to 11.6 kV

Operational characteristicsHigh isolation voltageHigh CMRRSmall package footprint

Intrinsic secondary floating supplyHigh CMRRSmall package footprint

UL Listed UL Recognized

17356

C US®

®

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line tests are designed to assure that products coming offthe line are confirmed to be constructed as those evaluatedduring the type tests. The first sections of UL1577 deal withpackage construction issues, materials, corrosionprotection, spacing, thermal testing, etc.

The section of greatest interest is section 16.2, whichspecifies “rated dielectric insulation voltage” testing. Itspecifies a test at the rated dielectric insulation voltage for60 s; however, it gives the manufacturer the option of testing

at 120 % of the rated dielectric insulation voltage for only1 second. For obvious efficiency concerns, the 1 s test ismuch more desirable. Thus, on a Vishay optocoupler datasheet, a “minimum isolation test voltage”, or “isolationvoltage for 1 s”, is actually 120 % of the rated dielectricinsulation voltage. Consequently, the actual rateddielectric insulation voltages are arrived at from Table 1,where they are identified by “system type” (family of relatedcomponents).

In addition to the general optocoupler standards listedabove, there is one additional component classification, thatof “double-protection” optical isolators, which is a fairlyunique evaluation specific under UL 1577. This is oftenconfused with the more commonly used IEC-based terms of“double insulation” and “reinforced isolation”. Both terms,explained in great detail in IEC60950, are briefly defined asfollows:

Reinforced insulation: A single, robust level of insulationthat meets a high level of constructional and performancerequirements at a single point. This can be thought of as ahigh-integrity component, such as a power transformer withlow-voltage outputs or an optocoupler with at least a0.4 mm minimum insulation thickness to fulfill thisrequirement. Most of Vishay’s optocouplers fulfill thiscriterion. Those that do will indicate the required 0.4 mmminimum insulation thickness. Vishay’s unique over-underdouble-molded construction inherently provides excellentdielectric insulation characteristics.

Double insulation: An insulation system, equivalent inprinciple to the above in that it prevents the operator frombeing exposed to hazardous currents, that consists of thesum of basic insulation and a secondary, independentfault-protection method. Such an insulation system shouldprotect the end-user from any single point of failure of theprimary insulation medium. One of the most commonmethods of providing secondary fault protection is to use agrounded metal chassis, which is designed to trip afault-protection device should the line fault to the chassis.

Another would be to employ a completely independentinsulation system such as would be provided by a plasticchassis.

Double protection: does not refer to either of the abovecommon IEC defined terms but rather is a performance test,outlined in the UL1577 standard. All of Vishay's system Hand J parts have been tested and conform to the doubleprotection standard. The double protection test basicallyinvolves subjecting the part under test to 20 kV pulsedischarges and then testing the device using a partialdischarge method to verify that no permanent damage hasbeen incurred. The apparatus used to perform the doubleprotection test is described below.

Fig. 6 - Circuit Discharge Test

TABLE 1 - PRODUCTION TESTING CONDITIONSOPTO. FAMILY(SYSTEM TYPE)

60 s TESTVAC RMS

60 s TESTVDC

1 sVAC RMS

1 sVDC

A, C, D 1500 2120 1800 2550B, H, J 4420 6250 5304 7500E 3748 5300 4498 6360F 1980 2800 2376 3360G 3536 5000 4243 6000S, Y, O 2500 3536 3000 4200I, V 1473 2083 1768 2500T 3750 5303 4500 6364L 1250 1768 1500 2122U 3125 4419 3750 5303

17352

C1 0.0005 µF R2 100 M

V+

E C1

S

R1

O1R2

O1 Device Under TestR2 100

S SwitchV DC voltmeter

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DIN EN 60747-5-5/IEC 60747The main German standard-writing body, VDE (VerbandDeutscher Electrotechniker), has a different approach tooptocoupler safety testing and certification than the UL. Thisapproach relies to a much lesser degree on assumptionsregarding the viability of insulation thickness.

Rather than assuming that a particular insulation thicknessguarantees the electrical dielectric barrier required tomaintain a given standard of electrical safety, the VDEmethod of testing and certification admits the possibility thatthe insulation could be flawed by voids due to cracks, airbubbles, etc., and compromised over time by voltagetransients. This approach allows for a higher degree ofconfidence in the insulation system, as well as a moreflexible approach to meeting a given isolation standard.Using this approach, it is possible to meet an isolationstandard with an insulation of lower thickness than would berequired by perspective standards that are based strictly oninsulation thickness. The consequence of this higherstandard of safety confidence is the need for more frequentand accurate testing.

The key to the VDE method of testing is the partial dischargetest. As in the case of UL1577, VDE testing methodologyincludes testing 100 % of the manufactured devices inquestion to an elevated voltage for 1 s and testing fordielectric breakdown. However, the VDE standard fordielectric failure is extremely tight. It allows for leakage fromthe “ganged” input-to-output pins of no greater than 5 pC.Furthermore, this elevated voltage test is done at a lowervoltage than the required UL high-pot test, reducing thepossibility of component damage during the test. Moreover,in addition to the 100 % partial discharge test on theproduction line and a type or qualification test during theengineering evaluation phase, VDE requires a destructivesample testing by random sampling tests throughout themanufacturing process. The destructive type and batchsample test is described in figure 7.

Fig. 7 - VDE TYPE and Sampling Destructive Test

VIOTM and VIORM are parameters designated by Vishaybased on the inherent material and constructioncharacteristics of particular parts. These are provided in theVishay data book for each specific part in question. VIOTMrefers to the impulse voltage value of a particular device,and it will be important for determining “usage category”,which is described in detail later on in this document. VIORMis the maximum recurring peak voltage, or maximumoperation voltage, which is one of the parameters usedwhen determining the maximum continuous operatingvoltage. VPR, the partial discharge test voltage, is derivedfrom VIORM, being 1.875 VIORM for 100 % production linetesting and 1.5 VIORM to 1.2 VIORM for various stages of typetesting.

In addition to the destructive tests that are performed fortype qualification and sample batch testing, VDE requires apartial discharge test to be performed for every single partas a routine test. Moreover, preceding the partial dischargetest, Vishay performs an isolation voltage test for 1 s foreach and every part coming through production. This test isperformed on all Vishay optocoupler parts, whether or notthey are required to meet the DIN EN 60747-5-5 standard,because it is a test also required for UL 1577. It is describedin figure 8.

Fig. 8 - Isolation Voltage Test

For those parts that comply to DIN EN 60747-5-5 orIEC 60747, a partial discharge test is conducted subsequentto the isolation test described above. This partial dischargetest consists of applying an elevated voltage from theinput side to the output side of the optocoupler deviceunder test and measuring the leakage current from primaryto secondary. The leakage current allowed is 5 pC.Consequently, this is an excellent test for measuring theinsulation integrity of a device, much more so than the useof a prescribed minimum insulation thickness. This test isdescribed in figure 9.

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VIOTM

V

1 s

VIORM

t1 s60 s

VPR

1 s1 s 10 s

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VIOTM

V

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VV

t0.1 s1 s

PR

IOTM

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Fig. 9 - Partial Discharge Test Profile

In addition to the UL and VDE/IEC specs described above,Vishay couplers are also certified by several other regional“competent bodies” such as CSA, which is accredited bythe Standards Council of Canada, and notified bodies in theEuropean Union such as BSI and FIMKO. Whether or not aspecific part is certified by a specific agency can bedetermined by looking at the Vishay Agency Approval Table,and if there are any doubts, this may be ascertained bycontacting Vishay directly. All of these additional approvalsinvolve the submission of product to various regulatoryagencies and notified bodies, and do not require anyadditional production line testing.

INSTALLATION CATEGORYAn additional issue to consider when addressing theelectrical safety issues involved with the use ofoptocouplers is “installation category”. Installation categoryrefers to a grouping of equipment based on where theend-user product is located in the power distributionsystem, and therefore what overvoltage transients thecircuits would be expected to tolerate. For example, the

worst-case installation category IV would be a power meterthat is connected directly to the main power feed and doesnot benefit from the additional transient protection that isenjoyed by systems farther downstream from the mainpower feed. This would require the highest-possibletransient withstand voltage, and it would be the highestinstallation category. The further away equipment is fromthe main power feed, the lower will be the required transientwithstand voltage and installation category. This concept isillustrated below.

In addition to how close to the utility line equipment resides,a second consideration to take into account whendetermining installation category is utility line voltage.

Fig. 10 - Installation Category

UL60950 for ITE only details spacings with the assumptionthat the products covered under the standard are categoryII, so the decision of the installation category is essentially

made for the manufacturers when they choose to abide bystandards such as UL60950.

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V

0.1 s

V

t0.1 s1 s

V

PR

IOTM

Installation Category

UtilityPowerMeter Fixed

KitchenRange

Off-LinePC

Non Off-Linepowered

PeripheralDevices

CAT IV CAT III CAT II CAT IDevices

ConnectedDirectly to

UtilityPower

FixedAppliancesnot Tied toWall Outlet

PlugConnected

Devices

Non-PlugConnected

Devices

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TABLE 2 - IEC-664 INSTALLATION CATEGORIES

UTILITY VOLTAGEPHASE TO EARTHVRMS OR DC

IMPULSE WITHSTAND VOLTAGES IN VOLTS FOR INSTALLATION CATEGORYVIOTM (FROM VISHAY VDE TABLES)

INSTALLATION CATEGORY I

INSTALLATION CATEGORY II

INSTALLATION CATEGORY III

INSTALLATION CATEGORY IV

50 330 500 800 1500

100 500 800 1500 2500

150 800 1500 2500 4000

300 1500 2500 4000 6000

600 2500 4000 6000 8000

1000 4000 6000 8000 12 000

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CREEPAGE AND CLEARANCECrucial points of interest when trying to meet any specificsystem standards are creepage and clearance parameters.Creepage is defined as the shortest distance between twoconductors over a material’s surface. Clearance is simplythe shortest distance between two conductors through air.These two parameters, discussed in great detail inEN 60950, and other IEC standards do not apply whereinsulation is relied upon to isolate circuits, but do applywhere there are potential paths “around” the insulation.Both of these parameters are provided in the Vishay productdata sheet as they apply to Vishay optocouplers. They areexplained in figures 11 and 12.

Fig. 11 - Over-Under, Double-Molded Optocoupler Crossection

In addition to the standard clearance paths, option 6 andoption 8 can increase the spacing paths by in-creasing thelead spread as illustrated in figure 12.

Fig. 12 - Coplanar Optocoupler Crossection

Designers should note that often it is the pad-to-padspacing on the circuit boards themselves that is the limitingfactor for the allowable spacing requirements. Most printedwiring board manufacturers do not evaluate their boards forcomparative tracking index (CTI) ratings, so the worst-case

material group IIIb (as defined in IEC 60950) is almost alwaysassumed, with hard-to-control soldermask not dependedupon as a reliable insulating means.

Some manufacturers place 1 mm wide minimum slots in theboard for pollution degree 2 environments to break up thecreepage distance requirement and meet only the clearancedistance. See figure 13.

Fig. 13 - Lead Spacings

DESIGN EXAMPLEA power supply designer wants to sell an existing AC-to-DCswitching power supply, which is agency-approved for theITE industry under UL60950, to the international (IEC based)industrial control market that normally sits upstream of ITEin the building's branch circuit distribution. That is, thepower supply would be used in an installation category-IIIenvironment instead of II. The product will be used in a208 V application. Table 2 shows that a 4000 V impulsewithstand voltage (or VIOTM) is required. Also, in the supplythere is a maximum repetitive peak working voltage of350 Vpk in the front end of the supply that may appear at theoptocoupler, so it should be selected with the minimumrepetitive peak working voltage (or VIORM) of 350 Vpk. VIOTMand VIORM values are often confused with the isolation testvoltage (or dielectric or high-pot rating). The spacings(creepage and clearances) would then need to be checked,with the circuit board’s pads usually being the limitingfactor. Vishay’s spacings are typically shown on thespecification sheets.

CONCLUSIONIt is important to reemphasize the difference betweensystem-level standards and component-level standards.The procedures and standards discussed in this documentrefer to component-level standards and must be looked atin that context. If issues arise regarding specific systemstandards such as IEC 60950, IEC 60601, etc., Vishayapplications engineering is able to deal with questions asthey may pertain to the optocoupler requirements. Meetingsystem electrical safety standards is an issue that must beaddressed on a final system level, and it cannot becompletely addressed by simply choosing the rightoptocoupler.

17919

Outside Creepage Distance

Clearance

Inside Creepage Distance

Receiver Die

Emitter Die0.4 mm

0.4 mm

Inside Creepage Distance

Emitter DieReceiver Die

17920

Outside Creepage Distance

Clearance

10.16 mm > 0.7 mm

> 9.27 mm

17347

OPTION 6 OPTION 8

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REFERENCESWebster, G. John, “Medical Instrumentation Application and Design”. New York: Wiley, 1998.

Burek, Robert & Linehan, James, “Product Safety for ITE, Telecom, Laboratory, and Test and Measurement Equipment”.Compliance Engineering, Foxborough, 1998

UL 1577 Standard for Safety for Optical Isolators.

IEC 60950 Safety Standard for Information Technology Equipment.

IEC 60747-5-2 Standard for Optoelectronic Devices.

USEFUL WEB LINKSVishay http://www.vishay.com

UL http://www.ul.com/

IEC http://www.iec.ch/

FIMCO http://www.sgsfimko.fi/index_en.html

BSI http://www.bsi-global.com/index.xalter

CSA http://www.csa-international.org/default.asp?lanuage=english

VDE http://www.vde.com/VDE/de/

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V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 54

Isolated Industrial Current Loop Using the IL300 Linear

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INTRODUCTIONProgrammable logic controllers (PLC) were once only foundin large manufacturing firms but now are used in small tomedium manufacturing firms. PLCs are being retrofitted intomanufacturing environments where temperature, pressure,and level sensor control signals are exposed to harshelectrical noise. The connection between these sensors andthe controller requires the use of high noise immunitycommunication technology.

One solution to this communication problem is the analogcurrent loop. A current loop is an interface technique thatconverts a process sensor’s output to a DC current signal.When compared to voltage control techniques, a current

loop receiver’s low input resistance offers higher noiseimmunity. Current loops have the added advantage of betteraccuracy, because they eliminate sensor signal errorsintroduced by communication line resistance.

Electrical noise can be reduced further by providing isolationbetween the current loop receiver or transmitter and theprocess controller. An isolated receiver and transmitter canbe constructed using the IL300 linear optocoupler. Thisapplication note will describe how to design a line poweredisolated current loop receiver and transmitter. It will discussthe design process and show circuit variations compatiblewith common current loop pseudo-standards.

Fig. 1 - Isolated Transmitter and Receiver Current Loop

CURRENT LOOP ELEMENTSA current loop typically consists of a transmitter, a receiver,and a DC power supply. The highest insulation and noiseimmunity is achieved when an isolated transmitter and anisolated receiver are used as shown in figure 1. However,there are many situations where only one end of the loopcan be isolated. Figures 2 and 3 illustrate combinations ofisolated and non-isolated current loop elements.

Isolated current loop transmitters and receivers commonlyrequire separate isolated power supplies in addition to thestandard loop voltage supply. The designs in thisapplication note derive their power from the DC supplyfound in the loop. Commonly the loop power supply is anisolated voltage supply whose output voltage will rangefrom 10 V to 24 V. Thus only a single isolated power supplyis needed to power the loop.

CURRENT LOOP CONVENTIONSThe 4 mA to 20 mA current loop is the most commonpseudo-standard. This convention defines a 4 mA loopcurrent as the sensor’s zero reference. The full scale of thesensor output corresponds to a 20 mA loop current,representing a minimum to maximum current ratio of 1:5.The sensor’s signal output commonly has a zero referenceof + 1 V and a full scale of + 5 V which also corresponds toa 1:5 signal ratio and a + 4 V span.

Figure 4 shows the transmitter’s output loop current as afunction of input sensor voltage. Other conventions includesensor signal spans of 5 V, where the sensor’s zeroreference is 0 V, and full scale is + 5 V (figure 5).

Vout

Vin

Line RCVRXMTR

Powersupply

Process

controllerSensor

17811

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Fig. 2 - Isolated Transmitter and non-Isolated Receiver Current Loop

Fig. 3 - Non-Isolated Transmitter and Isolated Receiver

Figures 4 and 5 show the transmitter transfer function. The loop current (IL) is the product of the sensor voltage (Vin) times thetransmitter trans conductance, milli-Siemens. The receiver in Figure 4 has a trans resistance of 250 Ω, while for Figure 5 it is312.5 Ω.

Fig. 4 - 1 V to 5 V, 4 mA to 20 mA Current Loop Transfer Fig. 5 - 0 V to 5 V, 4 mA to 20 mA Current Loop Transfer

Vout

Vin

Line RCVRXMTR

PowerSupply

Sensor ProcessController

17812

VoutVin

Line RCVRXMTR

PowerSupply

Sensor ProcessController

17813

Sensor Voltage - Vin

I L -

Loop

Cur

rent

- m

A

5432100

5

10

15

20IL(mA) = 4 mS x Vin

17814

5432100

5

10

15

20IL(mA) = 4 mA + 3.2 mS x Vin

17815 Sensor Voltage - Vin

I L -

Loop

Cur

rent

- m

A

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CURRENT LOOP TRANSMITTERFigure 6 shows an isolated current loop transmitter with a1 V to 5 V input and a 4 mA to 20 mA output. The sensorsection consists of an optical feedback amplifier (U1, IL300)that converts the sensor voltage (Vin) to an outputphotocurrent (IP2). The output amplifier, U2, operates as acurrent controlled current sink. The equation for the linecurrent (IL) as a function of the output photocurrent (IP2) isgiven below:

The equation for the output photocurrent, IP2, as a functionof the sensor voltage is given below:

Combining equations 1 and 2 results in the completetransmitter DC transfer relationship with K3 the IL300’stransfer gain.

1 V to 5 V, 4 mA to 20 mA TRANSMITTER DESIGN The design of the 1 V to 5 V input, 4 mA to 20 mA outputisolated current loop transmitter starts with analyzing theisolated current to current converter. This amplifier (U2), aNational Semiconductor LM10 operational amplifier, waschosen for its high output current and ability to operate froma single supply. The input sensor amplifier controls theoutput photocurrent (IP2). IP2 develops a voltage across R3at the inverting input of U2, forcing a loop current to flowthrough R4. Thus Io times R4 is equal to the voltagedeveloped across R3 times IP2 (Equation 4). Equation 5shows that resistors R3 and R4 set U2’s current gain.

Fig. 6 - Isolated 1 V to 5 V, 4 mA to 20 mA Transmitter

A current gain of 400 is selected, with R4 equal to 50 Ω.From equation 5, R3 is 20 kΩ. Equation 1 shows that a loopcurrent of 4 mA to 2 mA requires an output photocurrent (IP2)of 10 μA to 50 μA.

The last design step is to determine the input resistor (R1) byrearranging Equation 3. The trans conductance, Io/Vin ofFigure 6, is 4 milli-Siemens (mS). The remaining variable isthe IL300’s transfer gain, K3. The part to part variation of the

transfer gain offers a range of 0.56 to 1.53. With K3 = 1, R1is calculated to be 100 kΩ from equation 6. See figure 7 forthe spread of R1 versus the guaranteed range of K3. Thus a200 kΩ, 10 turn potentiometer will compensate for the fulldistribution of K3.

IOIP2 x R3

R4----------------------= (1)

IP2

Vin x K3

R1----------------------= (2)

IOVin------- K3 x R3

R1 x R4----------------------= (3)

IP2 x R3 IO x R4= (4)

Current GainIP2 x R3

R4----------------------= (5)

U1OP90–

+

100pF

3

2

6 2N3906

+15 V

6

2

3

Output

Sensor Input

R1

3

2

4

1

GND

100

R3 R4

7

4+

GND

Isolated Line

Sensor Connection

Vin

GND

Io

+

U2LM105

6

7

8

K1

IP1

IL300

K2

IP2

17816

Ω

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Fig. 7 - R1 vs. K3 for Isolated 1 V to 5 V, 4 mA to 20 mA Transmitter

0 V to 5 V, 4 mA to 20 mA TRANSMITTER DESIGNA current loop transmitter conforming to the pseudo-standard of 0 V to 5 V input to 4 mA to 20 mA output can bedesigned using the general circuit topology in figure 6. With

the addition of a bias source (Vref) 4 mA of line current willflow when Vin = 0 V. The LM10 offers an integrated 200 mVband gap reference source with voltage follower bufferamplifier. The LM10’s voltage reference and differentialamplifier make it uniquely qualified as the output currentamplifier. Figure 8 shows the schematic of a currenttransmitter including a bias source, U3.

By inspection and using Equation 4, the transmitter currenttransfer function can be determined. The transfer functionfor figure 8 is given in equation 7.

This equation shows that the loop current is the sum of thesensor controlled signal (Vin) and current provided by thebias source (Vref). The bias source consists of a voltagefollower (U3) that buffers a 200 mV band gap reference. Thisvoltage reference is converted to a current source by the R2resistor. The value of R2 can be calculated from equation 8,when Vin = 0 V, and Io = 4 mA.

Fig. 8 - Isolated 0 V to 5 V, 4 mA to 20 mA Transmitter

2.01.51.00.50.00

50

100

150

200

K3 - Transfer Gain - K2/K1

R1

- In

put R

esis

tor

- kΩ

17817

R1 K3 x 20 kΩ6 ms x 50 kΩ-------------------------------------= (6)

R1 100 kΩ for K3 = 1.0=

IOVin x K3 x R3

R1 x R4------------------------------------- +

Vref x R3

R2 x R4-------------------------= (7)

Iref

Vref

R2----------=

IOVref

R2---------- x R3

R4------- when Vin = 0 V=

R2Vref x R3

IO x R4-------------------------= (8)

U1OP90-

+

100 pF

3

2

6 2N3906

+ VCC

+

-

6

2

3

Output

U2LM10

R1

3

2

4

1

GND

100 Ω

R3 R4

7

4+

GND

SensorInput

Isolated Line

Sensor Connection

-

+

8

1

R2

U3

Vin

GND

Io

Vref

IL300

K1

IP1

K2

IP25

6

7

8

17818

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Given the current gain, R3/R4 = 400, Vin = 0 V, andIo = 4 mA, R2 is calculated to be 20 kΩ.

The input resistor (R1) sets the trans conductance (ΔIP2/ΔVin)of the input amplifier. The current transmitter’s transconductance equals the trans conductance of the inputamplifier times the current gain of the output amplifier. Thetransmitter incremental trans conductance is calculatedgiven a ΔVin of 5 V, (0 V to 5 V), and ΔIo of 16 mA (4 mA to20 mA). A transmitter trans conductance 3.2 milli-Siemensresults.

Fig. 9 - R1 vs. K3 for Isolated 0 V to 5 V, 4 mA to 20 mA Transmitter

Assume an output amplifier current gain of400 (R3 = 20 kΩ, R4 = 50 Ω), a typical K3 = 1, and atransmitter trans conductance of 3.2 ms. Substituting R3,R4, and K3 into Equation 10, R1 can be determined.

Figure 11 shows the relationship of R1 as a function K3.

See Table 1 for the component values for each design.

Isolated transmitter resistor values, K3 = 1.

1 V to 5 V, 4 mA to 20 mA TRANSMITTER PERFORMANCEThe transmitter described in figure 6 was constructed andevaluated for accuracy and linearity as a function of inputsensor voltage and ambient temperature. The transmitterwas calibrated by adjusting R1 for 12 000 mA loop currentwith an input voltage of 3000 V at TA = 23 °C. Figure 10shows the percent error deviation from the expected loopcurrent. This circuit offers a typical accuracy of ± 0.2 % overa temperature range of 0 °C to 75 °C. Note that thetemperature performance appears to follow a paraboliccontour.

Fig. 10 - Percent Error vs. Input Sensor Voltage 1 V to 5 V, 4 mA to 20 mA Transmitter

Fig. 11 - Linearity Error vs. Input Sensor Voltage 1 V to 5 V, 4 mA to 20 mA Transmitter

Many industrial controllers have calibration techniques thatcan compensate for temperature imposed accuracy errors.These techniques are only valid if the transmitter exhibits ahigh degree of linearity. Figure 11 shows the linearity errorfor the transmitter. The linearity error is expressed as adeviation in parts per million (ppm) from a best fit linearregression at each temperature. Figure 11 shows a typicallinearity of + 200 ppm to - 600 ppm over a 0 °C to 75 °Ctemperature range.

0 V to 5 V to 4 mA to 20 mA 1 V to 5 V to 4 mA to 20 mA

R1 125 kΩ 100 kΩR2 20 kΩ INF

R3 20 kΩ 20 kΩR4 50 kΩ 50 Ω

1.51.00.550

100

150

200

K3 - IL300 Transfer Gain

R1

-In

putR

esis

tor

-K

17819

ΔIP2

ΔVin----------- K2

R1-------=

ΔIOΔVin----------- K3

R1------- x R3

R4-------= (9)

R1ΔIO---------

Vin x K3 x R3

R4-------------------------------------= (10)

R1 1.0 x 20 kΩ3.2 ms x 50Ω------------------------------------= (11)

R1 125 kΩ=

25 °C

0 °C

75 °C

Vin - Sensor Input Voltage - V

Per

cent

Err

or -

%

5.04.54.03.53.02.52.01.51.00.50.0- 0.2

- 0.1

0.0

0.1

0.2

0.3

50 °C

17820

5.04.54.03.53.02.52.01.51.0- 600

- 400

- 200

0

200

400

0 °C25 °C50 °C75 °C

Vin - Sensor Input Voltage - V

Line

arity

Err

or -

ppm

17821

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Isolated Industrial Current Loop Using the IL300 Linear

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0 V to 5 V, 4 mA to 20 mA TRANSMITTER PERFORMANCEThe transmitter in figure 8 was constructed and evaluatedfor accuracy and linearity as a function of input sensorvoltage and ambient temperature. The transmitter wascalibrated by adjusting R2 for 4000 mA loop current with aninput voltage of zero volts (0.000 V).

The R1 resistor is then adjusted for 12000 mA loop currentwith an input voltage of 2.5 V at TA = 23 °C. Figure 12 showsthe percent error deviation from the expected loop current.This circuit offers a typical accuracy of + 0.4 % over atemperature range of 0 °C to 75 °C. Note that thetemperature performance appears to follow a paraboliccontour.

Fig. 12 - Percent Error vs. Input Sensor Voltage 0 V to 5 V, 4 mA to 20 mA Transmitter

Figure 13 shows the linearity error for the transmitter. Thelinearity error is expressed as a deviation in parts per million(ppm) from a best fit linear regression at each temperature.Figure 13 shows a typical linearity of + 600 ppm to- 1000 ppm over a 0 °C to 75 °C temperature range.

Fig. 13 - Percent Error vs. Input Sensor Voltage 0 V to 5 V, 4 mA to 20 mA Transmitter

CURRENT LOOP RECEIVERThe sensor controlled, current loop signal is converted to avoltage by the current loop receiver. The receiver’sconversion gain and output voltage span is determined bythe adopted current loop standard. A 4 mA to 20 mA loopcurrent is commonly converted to a 1 V to 5 V output signal.The receiver design in this section conforms to thisstandard. Signal conversion and isolation are provided byan IL300, linear optocoupler. The circuit is loop currentpowered. The isolation feature and the receiver’s lowoperating voltage drop permits multiple receivers within theloop.

RECEIVER OPERATIONThe isolated current loop receiver consists of two sections.They include a loop current to photocurrent currentamplifier, U1, and an output trans resistance amplifier, U2.Figure 14 shows a simplified schematic. The receiver’slinearity and stability are insured by using optical feedbackwithin the loop current to photocurrent amplifier.

Fig. 14 - Isolated Current Loop Receiver

The optical feedback amplifier provides precise control ofthe LED’s output flux. A bifurcated optical signal path withinthe IL300 provides an equally well controlled photocurrentfor the output trans resistance amplifier.

The loop current to photocurrent current amplifier consistsof a single-supply micro-powered differential controlamplifier, U1, and an LED current shunt regulator, Q1. Shuntcontrol of the LED current was chosen to accommodate thereceiver’s need for a low supply voltage operation.

The current loop receiver circuit functions as follows. Theloop current (IL) flows into the junction of U1’s Vcc (R1 andR2). U1’s supply current (IU1) is substantially smaller thanthe loop current and will be omitted in the analysis. The loopcurrent is divided at the juncture of R1 and R2. The sum ofthe currents flowing in each leg is equal to the loop current.The individual currents (Iq and IF) are determined by therequired LED current to generate the needed photocurrent(IP1) connected to the control network at U1. Figure 15shows the Iq and IF relationships for the receiver.

5.04.54.03.53.02.52.01.51.00.50.00.0

0.1

0.2

0.3

0.4

Vin - Sensor Input Voltage - V

Per

cent

Err

or -

%

0 °C

25 °C

50 °C

75 °C

17822

Vin - Sensor Input Voltage - V

Line

arity

Err

or -

ppm

5.04.54.03.53.02.52.01.51.00.50.0- 1200- 1000

- 800- 600

- 400

- 200

0

200

400600

800

1000

0 °C25 °C50 °C75 °C

17823

+

U1

Q1

R4

IL

V1

Iq

IR3

IF

IP1

Vb

Va

R3

IUI

K1

Vgs

PD1

K2

+

IP2

GND

VoU2

R5

PD2

LED

IL

R1 R2

17824

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Fig. 15 - LED Current Shunt Control

The total loop current flows into the junction, V1. Thiscurrent, IR3, develops a voltage across R3. Under initialconditions, this positive voltage appearing at the invertinginput of U1 will force U1’s output towards the negative rail.This Vgs forces Q1 into cut-off. Under this condition the LEDcurrent (IF) equals the loop current (IL). This rise in LEDcurrent generates an optical flux which falls on the feedbackphotodiode (PD1) and generates a photocurrent (IP1). Thisphotocurrent will rise to a value where voltage developedacross R4 equals the voltage across R3. This satisfies thedifferential amplifier requirement of Va = Vb. U1’s outputprovides the control signal for Q1’s gate, forcing it intoconduction and shunting excess loop current away from theLED current path. The feedback control relationship isshown in equation 12.

Where: IP1 = feedback photocurrentK1 = feedback gainP2 = output photocurrentK2 = output gainK3 = transfer gain (K2/K1)

With equations 12 and 15, solve for IP2.

The transfer gain can be written from equation 16.

The output current, IP2, is converted to a voltage by the transresistance amplifier U2. The output voltage gain equation isshown below.

Combining equations 18 and 17 results in the current looptransfer gain solution, Vo/IL (equation 19).

LED CURRENT SHUNT OPERATION The differential amplifier, U1, provides the control signal tothe LED current shunt regulator. U1’s output is connected tothe gate of an n-channel FET, Q1. This transistor is thecontrol element of the LED current shunt regulator. Theregulator consists of a network made up of the seriesconnection of the FET and R1, in parallel with the seriesconnection of the IL300’s LED and R2.

The amplifier’s output signal controls the FET’s drain tosource resistance, Rq. As the gate voltage is increased, theFET resistance will decrease causing a larger percentage ofthe loop current to be diverted away from the LED signalpath. Thus a rising control voltage, Vgs, causes the LEDcurrent to decrease. A Siliconix TN0201L enhancementlow-voltage FET was selected as the control device for tworeasons. First, with Iq ≤ 20 mA, the FET’s gate voltage shouldbe less than 3 V. The TN0201L control characteristics as afunction of loop current are shown in figure 16. Second, theFET’s dynamic resistance should be in the same order ofmagnitude as the IL300’s LED dynamic resistance. Thedynamic resistance of both the LED and FET are shown infigure 17.

Fig. 16 - TN0201L Gate Voltage vs. Drain Current

201510500

5

10

15

20

IFIq

IL - Loop Current - mA

I-C

urre

nt-

mA

IL = Iq + IF

IF(mA) = - 0.327 mA + 0.48 x IL (mA)Iq (mA) = 0.327 mA + 0.52 x IL (mA)

17825

IP1 x R4 IR3 x R3; IR3 IL∼=

IP1 x R4 IL x R3= (12)

IP1 K1 x IF= (13)

IP2 K2 x IF= (14)

IP2 IP1 x K3= (15)

IP2R3R4------- x IL x K3= (16)

IP2

IL------- R3

R4------- x K3= (17)

VO IP2 x R5= (18)

VO

IL------- R3

R4------- x R5 x K3= (19)

201510500

2

4

6

8

10

12

14

1.8

1.9

2.0

2.1

2.2

2.3

2.4

2.5

IL - Loop Current - mA

I ds -

Dra

in S

ourc

e C

urre

nt -

mA

Vgs

- G

ate

to S

ourc

e V

olta

ge -

VIq

Vgs

17826

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Fig. 17 - Dynamic Resistance vs. Current

The shunt regulator includes a series resistor in each leg ofthe network. These resistors are included in the design fortwo reasons: first, to provide a measure of current overloadprotection for the LED and FET, and second to set the initialcontrol conditions for the network.

The design equations are given below:

Where: IL = loop currentIq = Q1 drain currentIF = LED forward currentRFET = Q1 dynamic resistanceRLED = LED dynamic resistanceVn = Voltage across the control network

Combining equations 20, 21, and 22:

Replacing Iq in terms of IF and setting to zero gives equation24.

The LED and FET dynamic resistance equations aresubstituted into EQ 24.

This transcendental equation is best solved by iterativetechniques.

CURRENT LOOP RECEIVER DESIGNThe current loop receiver design is divided into twosections. The first is the shunt regulator; the second is thefeedback control amplifier. The shunt regulator design relieson equation 25 and intuitive selection of an LED operating

point. The LED forward current is bounded by the loopcurrent range which is 4 mA to 20 mA. The selection of R1and R2 is determined by solving equation 25 when the LEDcurrent, IF = 10 mA, for a loop current equal to 20 mA. Thispoint is selected to provide sufficient FET current controlrange given the initial value range of K1 and its temperaturedependence. Under the IF and IL conditions selected,Equation 25 will provide the resistance range for R1 and R2.

Equation 26 shows that R2 is greater than R1, and therecommended difference is 67 Ω. Given this guidance, a100 Ω resistor is selected for R2. A larger value than therecommended 33 Ω is selected for R1. A 47 Ω resistor isused providing for greater LED current limiting. GivenR1 = 47 Ω and R2 = 100 Ω, the LED current is calculatedequation 25 at loop current extremes. At IL = 4 mA, the LEDcurrent (IF) is equal to 1.735 mA, while for a loop current of20 mA, IF = 9.42 mA.

The next part of the design is selecting the resistors, R3 andR4, surrounding the feedback control amplifier. Recall thatR3 is the loop current sense resistor and should be valuedless than 100 Ω. For this design example, R3 = 20 Ω.equation 27 shows the relationship of R4 in terms of circuitvariables.

Figure 18 shows the nonlinear nature of the feedback gain,K1, for the IL300. The worst case condition occurs whenthe loop current is at its minimum, IL = 4 mA. Under thiscondition IF = 1.75 mA. Figure 14 can be used to determineK1 under these conditions. The figure shows that atIF = 1.75 mA, K1 equals 0.00475.

Fig. 18 - LED Current and Feedback Gain vs.Feedback Photocurrent

Substituting these values into equation 27, R4 can bedetermined.

R4 = 9.62 kΩ, a 10 kΩ resistor is selected.

201510500

500

1000

1500

I - Current - mA

R -

Res

ista

nce

- Ω

TN0210L FET

IL300 LED

RLED (Ω) = 1.023 • IF(A)^-1.017

RLED (Ω) ~1

IF(A)RFET (Ω) = 2.7524 • Ids(A) ^ - 0.892

17827

L Iq x IF= (20)

Vn Iq x RFET + R1( )= (21)

Vn IF x RLED + R2( )= (22)

Iq x RFET + R1( ) IF x RLED + R2( )= (23)

0 RFET - RLED + R1 - R2= (24)

0 2.7524 x IL - IF( )- 0.892( ) - 1IF---- + R1 - R2= (25)

R2 - R1 67 Ω= (26)

R4R3 x ILIF x K1-------------------= (27)

8060402000

2

4

6

8

10

12

14

16

0.004

0.005

0.006

0.007

0.008IF

K1

IP1 - Feedback Photocurrent - µA

I F -

LE

D C

urre

nt -

mA

K1

- F

eedb

ack

Gai

n -

I P1/

I F

1.75

0.00475

17828

R4 20 Ω x 4 mA1.75 mA x 0.00475--------------------------------------------------= (28)

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The final section of the design centers on the selection of thetrans resistance of the output amplifier shown in figure 19.The feedback resistor (R5) combined with the operation ofthe output amplifier (U2) converts the IL300’s outputphotocurrent (IP2) into the output voltage (Vo). The outputvoltage span (ΔVo) will be 1 V to 5 V, given a loop currentspan (ΔIL) of 16 mA.

This relationship substituted into equation 19 can be used tosolve for R5.

The final circuit of the isolated current loop receiver is shownin figure 19.

The circuit is completed by adding two diodes placed inseries with the loop. The diode, D2, is a protection devicewhich will block current flow if the receiver’s loop voltagesource is improperly connected. The diode, D1, performstwo functions:

(1) a visual indicator of loop current flow,(2) functions as a 2 V drop in the loop.

This voltage drop is needed to provide supply head room forthe control of the shunt regulator FET.

RECEIVER PERFORMANCE 4 mA to 20 mALOOP CURRENT, 1 V to 5 V OUTPUTThe receiver in Figure 19 was constructed and evaluated foraccuracy and linearity as a function of input loop current andambient temperature. The receiver was calibrated byadjusting R6 for 3.00 V output with a loop current of12.00 mA at TA = 23 °C. Figure 20 shows the percent errordeviation from the expected output voltage. This circuitoffers a typical accuracy of + 0.8 % to - 0.5 % over atemperature range of 0 °C to 75 °C. Note that thetemperature performance appears to follow a lineartemperature characteristic. Figure 18 shows a typicaltemperature coefficient of 175 ppm/°C.

Many industrial controllers have calibration techniques thatcan compensate for temperature imposed accuracy errors.These techniques are only valid if the receiver exhibits a highdegree of linearity. Figure 21 shows the receiver’s linearityerror as a deviation in parts per million (ppm) from a best fitlinear regression at each temperature. Figure 21 shows atypical linearity of + 300 ppm to -1000 ppm over a 0 °C to75 °C temperature range.

CONCLUSIONIsolated current loops offer the industrial control designerthe peace of mind that electrical noise and groundingproblems will not influence the sensor signal. Thisapplication note has shown the design technique andresults to construct a line powered 4 mA to 20 mA currentloop receiver.

It also presented two isolated current loop transmitters, oneconforming to the 1 V to 5 V input and a second to the 0 Vto 5 V input standard.

The performance data in this application note shows that thereceiver and transmitter easily conform to a 8 bit operationover a 0 °C to 75 °C operating range.

Fig. 19 - Isolated Current Loop Receiver

R5ΔVO x R4

ΔIL x K3 x R3--------------------------------------= (29)

ΔVO VO max. - VO min.=ΔIL IL max. - IL min.= (30)

R5VO max. - VO min.( ) x R4

IL max. - IL min.( ) x K3 x R3-----------------------------------------------------------------------= (31)

R5 5 V - 1 V( ) x 10 kΩ20 mA - 4 mA( ) x 1.0 x 20 Ω

------------------------------------------------------------------------------= (32)

R5 125 kΩ=

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

GND

R1

+

100 pF

3

26

2010 kΩ

100 Ω47

TN0201L

7

4

Q1

*C1R4

R3

R2

– Line

+ Line D2*1N914

D1LDH1111

* optional

OP90

Q1 SiliconixOP90

Analog Devices

+

62

34 - VCC

7

100 pF*C3

OUTPUT+ VCC

VCC = ± 9 VOP90

50 kΩR5100 kΩ

R6

GAIN

17829

Ω

Page 48: Bundle (1)

Isolated Industrial Current Loop Using the IL300 Linear

AP

PL

ICA

TIO

N N

OT

EApplication Note 54

www.vishay.com Vishay Semiconductors

Rev. 1.5, 18-Oct-11 10 Document Number: 83710

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 20 - Percent Error vs. Loop Current 4 mA to 20 mA Receiver Fig. 21 - Linearity Error vs. Loop Current 4 mA to 20 mA Receiver

20151050- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

0.6

0.8

25 °C

0 °C

75 °C

50 °C

IL - Loop Current - mA

Per

cent

Err

or -

%

17830

20151050- 1000

- 800

- 600

- 400

- 200

0

200

400

600

Line

arity

Err

or-

ppm

0 °C25 °C50 °C75 °C

17831 IL - Loop Current - mA

Page 49: Bundle (1)

V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 45

How to Use Optocoupler Normalized Curves

AP

PL

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TIO

N N

OT

E

Rev. 1.5, 18-Oct-11 1 Document Number: 83706

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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www.vishay.com

An optocoupler provides insulation safety, electrical noiseisolation, and signal transfer between its input and output.The insulation and noise rejection characteristics of theoptocoupler are provided by the mechanical packagedesign and insulating materials.

A phototransistor optocoupler provides signal transferbetween an isolated input and output via an infrared LEDand a silicon NPN phototransistor.

When current is forced through the LED diode, infrared lightis generated that irradiates the photosensitive base collectorjunction of the phototransistor. The base collector junctionconverts the optical energy into a photocurrent which isamplified by the current gain (HFE) of the transistor.

The gain of the optocoupler is expressed as a CurrentTransfer Ratio (CTR), which is the ratio of the phototransistorcollector current to the LED forward current. The currentgain (HFE) of the transistor is dependent upon the voltagebetween its collector and emitter. Two separate CTRs areoften needed to complete the interface design. The firstCTR, the non-saturated or linear operation of the transistor,is the most common specification of a phototransistoroptocoupler and has a VCE of 10 V. The second is thesaturated or switching CTR of the coupler with a VCE of 0.4V. Figures 1 and 2 illustrate the normalized CTRCE for thelinear and switching operation of the phototransistor. Figure1 shows the normalized non-saturated CTRCE operation ofthe coupler as a function of LED current and ambienttemperature when the transistor is operated in the linearmode. Normalized CTRCE(SAT) is illustrated in figure 2. Thesaturated gain is lower with LED drive greater than 10 mA.

Fig. 1 - Normalized CTR vs. IF and TA

Fig. 2 - Normalized Saturated CTR

The following design example illustrates how normalizedcurves can be used to calculate the appropriate loadresistors.

PROBLEM 1Using an IL1 optocoupler in a common emitter amplifier(figure 3) determine the worst case load resistor under thefollowing operation conditions:

Fig. 3 - IL1 to 74HC04 Interface

TA = 70 °C, IF = 2 mA, VOL = 0.4 V, logic load = 74 HC04

IL1 Characteristics:

CTRCE(NON SAT) = 20 % min. at TA = 25 °C, IF = 10 mA,VCE = 10 V

0.1 1 10 1000.0

0.5

1.0

1.5

2.0

Nor

mal

ized

CT

R

17485

TA = 25 °CTA = 50 °C

TA = 70 °CTA = 100 °C

Normalized to:IF = 10 mA, VCE = 10 V

TA = 25 °C

IF - LED Current (mA)

0.1 1 10 1000.0

0.2

0.4

0.6

0.8

1.0TA = 25 °C

IF - LED Current (mA)

Nor

mal

ized

CT

R

VCE(SAT) = 0.4 V

17486

TA = 50 °C

TA = 70 °CTA = 100 °C

Normalized to:IF = 10 mA, VCE = 10 V

TA = 25 °C

HC04

LR

OLV

FI

CCV

17487

Page 50: Bundle (1)

How to Use Optocoupler Normalized Curves

AP

PL

ICA

TIO

N N

OT

EApplication Note 45

www.vishay.com Vishay Semiconductors

Rev. 1.5, 18-Oct-11 2 Document Number: 83706

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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SOLUTION

Step 1.

Determine CTRCE(SAT) using the normalization factor(NFCE(SAT)) found in figure 2.

Fig. 4 - Normalized Saturated CTR

CTRCE(SAT) = CTRCE(NON SAT) NFCE(SAT) CTRCE(SAT) = 20 % x 0.36 (1)CTRCE(SAT) = 7.2 %

Step 2.

Select the minimum load resistor using the followingequation:

RL(MIN) = 48.94 kΩ, select 51 kΩ ± 5 %

The switching speed of the optocoupler can be greatlyimproved through the use of a resistor between the baseand emitter of the output transistor. This is shown in figure5. This resistor assists in discharging the charge stored inthe base to emitter and collector to base junctioncapacitances. When such a speed-up technique is used theselection of the collector load resistor and the base emitterresistor requires the determination of the photocurrent andthe hFE of the optocoupler.

The photocurrent generated by the LED is described by theCTRCB of the coupler. This relationship is shown inequations 3 and 4. Equation 5 shows that CTRCE is theproduct of the CTRCB and the hFE. The hFE of the transistoris easily determined by evaluating equation 4, once theCTRCE(SAT) and CTRCB are known. The normalized CTRCB isshown in figure 6. Equations 5, 6, and 7 describe thesolution for determining the RBE that will permit reliableoperation.

Fig. 5 - Optocoupler/Logic Interface with RBE Resistor

Fig. 6 - Normalized CTRCB vs. LED current

0.1 1 10 1000.0

0.5

1.0

1.5

Nor

mal

ized

CT

RC

B

17488

Normalized to:IF = 10 mA, VCB = 9.3 V

TA = 25 °C

SCTRCB - 25SCTRCB - 50SCTRCB - 70SCTRCB - 100

IF - LED Current (mA)

(0.072) 2 mA100 %

RL(min.) =- 50 µA

5 V- 0.4 V

CTRCE(SAT) IF

100 %

RL(min.) =- IL

VCC-VOL

(2)

HC04

LR

OV

FI

CCV

CBI

BER

17489

0.1 1 10 1000.0

0.5

1.0

1.5

17490

Nor

mal

ized

CT

RC

B

IF - LED Current (mA)

Normalized to:IF = 10 mA, VCB = 9.3 V

TA = 25 °C

SCTRCB - 25SCTRCB - 50SCTRCB - 70SCTRCB - 100

ICB

IF

CTCB = 100 % (3)

CTRCB

100 %ICB = IF

(4)

CTRCE(SAT) = CTRCB HFE(SAT) (5)

CTRCE(SAT)hFE(SAT) = CTRCB

(6)

VBERBE =ICB - IBE

(7)

VBE HFE(SAT) RLRBE =ICB HFE(SAT) RL

- [VCC- VCE(SAT)]

(8)

VBE

CTRCE NFCE(SAT)

CTRCB NFCB

IF CTRCE NFCE(SAT) RL

100 %

RL

RBE =- [VCC

- VCE(SAT)]

(9)

Page 51: Bundle (1)

How to Use Optocoupler Normalized Curves

AP

PL

ICA

TIO

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OT

EApplication Note 45

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Rev. 1.5, 18-Oct-11 3 Document Number: 83706

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PROBLEM 2Using an IL2 optocoupler in the circuit shown in figure 6,determine the value of the collector load and base emitterresistor, given the following operational conditions:

TA = 70 °C, IF = 5 mA, VOL = 0.4 V,Logic load = 74HC04

IL2 Characteristics:

CTRCE = 100 % at Tamb = 25 °C, VCE = 10 V, IF = 10 mA

CTRCB = 0.24 % at Tamb = 25 °C, VCB = 9.3 V, IF = 10 mA

SOLUTION

Step 1.

Determine CTRCE(SAT), and CTRCB.From figure 2 the CTRCE(SAT) = 55 %, [NFCE(SAT) = 0.55]From figure 6 the CTRCB = 0.132 %, [NFCB = 0.55]

Step 2.

Determine RL.From equation 2 RL = 1.7 kΩSelect RL = 3.3 kΩ

Step 3.

Determine RBE, using equation 9.

RBE = 199 kΩ, select 220 kΩUsing a 3.3 kΩ collector and a 220 kΩ base emitter resistorgreatly minimizes the turn-off propagation delay time andpulse distortion. The following table illustrates the effect theRBE has on the circuit performance.

Not only does this circuit offer less pulse distortion, but it alsoimproves high-temperature switching and common modetransient rejection while lowering static DC powerdissipation.

0.65 V(100 %)(0.55)(0.24 %)(0.55)

(5 mA)(100 %)(0.55)(3.3 kΩ)100 %

(3.3 kΩ)RBE =

- [5 V- 0.4 V](10)

TABLE 1IF = 5 mA, VCC = 5 V

RL = 3.3 kΩRBE = ∞ Ω

RL = 3.3 kΩRBE = 220 kΩ

tdelay 1 μs 2 μs

trise 4 μs 5 μs

tstorage 17 μs 10 μs

tfall 5 μs 12 μs

tphl 3.5 μs 7 μs

tplh 22 μs 12 μs

Pulse distortion 50 μs pulse 37 % 10 %

Page 52: Bundle (1)

V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 55

Optoelectronic Feedback Control Techniques for Linearand Switch Mode Power Supplies

AP

PL

ICA

TIO

N N

OT

E

Rev. 1.5, 18-Oct-11 1 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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INTRODUCTIONThe power supply designer is continually being pressured toprovide units which have higher efficiency, better regulation,less EMI and RFI, and smaller size and weight, all at a lowercost. The solution to this problem is a combination of circuittopology, layout, and supply control. This application notewill address output control techniques for linear and switchmode power supplies (SMPS). Specifically, it will covercontrol techniques using standard phototransistors and anew family of linear optocouplers.

ISOLATED REGULATIONNational and international safety agencies require a supply’soutput to be isolated and insulated from the AC mains. Manysupply manufacturers have elected to offer power suppliesthat satisfy all national and international safety insulationcriteria by selecting power transformers and feedbackdevices that meet a 3750 VAC withstand test voltage.Feedback systems that use optocouplers easily comply withthis insulation criteria. Optocouplers also offer a high degreeof noise rejection or isolation combined with their insulationcharacteristics.

LINEAR POWER SUPPLY FEEDBACKLinear power supplies comply with the main insulation andisolation safety requirements by virtue of theprimary/secondary insulation of the power transformer.There are numerous circumstances where isolatedfeedback in a linear power supply is needed, such asmonitoring high-voltage power supplies, currentmeasurement in the high side of the supply, or monitoringmultiple isolated outputs. Figure 1 shows a typical blockdiagram.

The feedback system for a linear power supply should beDC transparent and continuous. A standard phototransistorcoupler, when properly specified, can perform the feedbackfunction. To properly specify the phototransistor it isimportant to review the elements that contribute to acoupler’s operation. Figure 2 shows the phototransistoroptocoupler schematic.

Fig. 1 - Linear Power Supply Phototransistor Model

Fig. 2 - Phototransistor Coupler Schematic

Phototransistor optocouplers are current amplifiers. Thesecouplers include an infrared light emitting diode, LED,and an NPN silicon phototransistor. Figure 2A showsthe common schematic of a standard phototransistoroptocoupler. Figure 2B is an expanded schematic thatincludes a collector-base photodetector. An input LEDcurrent, IF, creates an optical flux, which is detected bythe photodiode. The photodiode develops a photocurrent,Icb, which is amplified by the phototransistor. Thephototransistor supplies a collector-emitter current, Ice. Thecurrent gain of the device is defined as a current transferratio (CTR) and is expressed as a percentage. The CTRrelationship is given in equation 1:

MainsAC/DCRectifier RegulatorXformer

IsolatedFeedbackCurrent orVoltage

IsolatedDCOutputs

Originally presented at the PCIM /Power Quality®, 1993Conference, Irvine, CA, U.S.A.17832

®

A. Simple Phototransistor

IF

Collector

Emitter

LED

ICE

IF

Collector

Emitter

LED

Base

DetectorICB

B. Expanded Simple Phototransistor17833

ICE

CTR = ICE x 100 %

IF--------------------------------- (1)

Page 53: Bundle (1)

Optoelectronic Feedback Control Techniques for Linearand Switch Mode Power Supplies

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Rev. 1.5, 18-Oct-11 2 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

The relationship of the LED forward current flux creation andthe generation of photocurrent is called current transfer ratiocollector-base (CTRcb). See equation 2.

Combining equation 2 with the transistor current gain, hFE,provides a more complete optocoupler gain equation:

The relationship given in equation 3 can be shown in a blockdiagram of the four elements that make up the DC transferfunction of the phototransistor coupler. These elements areshown in figure 3.

Fig. 3 - Phototransistor Block Diagram

The LED, package, detector, and transistor componentshave independent variables contributing to the optocouplertransfer function. The performance of the LED is influencedby four variables. These include the LED’s external quantumefficiency, ηe, the forward current, IF, junction temperature,TJ, and the total operation time.

The LED’s external quantum efficiency, ηe, specifies theelectrical-to-optical conversion factor. The optimumefficiency is determined by LED construction. For example,a GaAs LED has an ηe of approximately 10 %, while the ηefor a AlGaAs LED may be as high as 30 %. The operationalLED efficiency is determined by the three remainingvariables. The two most important are junction temperatureand LED current. The LED’s ηe has a negative temperaturecoefficient, typically - 1 %/°C. Figure 4 shows thetemperature dependence. This figure shows that when theLED junction experiences a 50 °C temperature change, forexample, from 25 °C to 75 °C. The output of the LED maybe reduced by as much as 50 %. The temperaturecharacteristic is more pronounced at a lower LED drivecurrent. As the LED current is increased this coefficient mayfall to - 0.5 %/°C.

Fig. 4 - Normalized LED Efficiency

The influence of forward current on LED efficiency is alsoshown in figure 4. Note that a standard GaAs LED efficiencywill be reduced by 50 % when the LED current is changedfrom 10 mA to 2 mA. One can conclude that in a DC circuitdesigns, the LED introduces large variations as a function offorward current and junction temperature.

Today’s LED processing techniques have all but eliminatedefficiency reduction as a function of time. LED efficiencyreduction is commonly called CTR degradation. Typicaldegradation is less than 10 % at 10 k/h and increases at alogarithmic rate.

The second element is the optical coupling (Kφ) within thepackage. Numerous assembly techniques exist for creatingthe LED-photodiode coupling path. However manufacturingvariations introduce coupling deviations, such as opticaltransmission media, emitter-detector separation distance,and alignment. Kφ is set at the time of manufacturing and isconstant as a function of time and temperature.

The third element is the phototransistor’s collector-basephotodetector responsivity. This factor is the mostconsistent and linear element of the coupler. Processvariations introduce worst case responsivity, Rφ, variationsof less than 25 %. The nonlinearity of the detector, over thedesigned photocurrent range, is less than ± 0.1 %.

The fourth element is the phototransistor current gain, hFE.The typical DC current gain showing the temperature,collector current, and VCE influence on DC current gain isillustrated in figure 5. Note that Vishay phototransistors donot exhibit the typical beta peak found at low (< 1 mA)collector currents. It shows a typical hFE temperaturecoefficient of + 0.5 %/°C. The most noticeable is theinfluence that VCE has on current gain. Figure 5 shows thatthe saturated gain (VCE < 0.4 V) is reduced by 30 % for anLED current of 10 mA.

CTRcb = Icb x 100 %

IF------------------------------- (2)

CTR = Icb x 100 %

IF x hFE-------------------------------- (3)

LED Packagetransmission separation alignment

Detector Amplifier

ηeIF

Time

TempRφ

IFIcehFE

Vce

TempIb

17834

1001010.10.2

0.4

0.6

0.8

1.0

1.2

IF - LED Current (mA)

Nor

mal

ized

LE

D E

ffice

ncy

TA = 25 °C

TA = 70 °C

17835

TA = 50 °C

Page 54: Bundle (1)

Optoelectronic Feedback Control Techniques for Linearand Switch Mode Power Supplies

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EApplication Note 55

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Rev. 1.5, 18-Oct-11 3 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 5 - Phototransistor H

These four optocoupler elements create a linear DC transferfunction, implying that a change in any one of theseelements creates a factored change at the output.Functionally, the relationship is shown in equation 4:

This section has presented the basic DC model andresulting transfer equation of the standard phototransistor.The goal was to illustrate factors that effect the DCcurrent gain. The designer is encouraged to review thecharacteristics of the optocoupler being considered and beaware of the temperature and LED current influences on thecurrent transfer ratio of a simple phototransistor.

Most designers compensate for these variations byselecting narrow-binned CTR optocouplers. Designers oftencompensate for gain variations by introducing negativefeedback within a control loop. Equation 4 illustrates thattypical voltage or current feedback techniques are notpossible if insulation or noise isolation is to be maintained.

OPTICAL FEEDBACK CONTROL TECHNIQUEThe factors that influence the DC current gain of theoptocoupler can be compensated by introducing opticalfeedback within the LED or input side of the coupler. Thistechnique consists of including an optical detector orphotodiode on the input that monitors the LED’s output flux,which is possible now with the introduction of the Vishayfamily of linear optocouplers.

A DC coupler optical isolation amplifier using the new IL300linear optocoupler is shown in figure 6.

This optical isolation amplifier uses an operational amplifier(U1) as an electro-optical servo amplifier that controls theLED current. The servo photodiode is operated in thephotovoltaic mode and is zero biased from its connection toU1's inverting and non-inverting inputs.

This circuit responds to positive unipolar voltages, as foundat the voltage output of the power supply. Initially, when thepower supply is energized, Vin = 0 V, IF and IP1 are also zero.As the input voltage rises, U1 forces a voltage across theLED causing it to emit light. The LED's optical flux generatesa servo photocurrent (IP1) which is proportional to the inputvoltage, IP1 = Vin/R1. The LED's current increases untilsufficient servo photocurrent is generated to keep thedifference between U1's inverting-noninverting inputs equalto zero volts.

The servo photocurrent is proportional to the LED's current.This relationship is defined as servo gain, K1 = IP1/IF.Combining the two equations describes the LED's currentdependence on input voltage:

The isolated output circuit consists of a zero-biasedphotodiode transresistance amplifier. This output amplifieris configured to generate an output voltage proportional toIP2 and the transresistance R2. The output photocurrent, IP2,is determined by the output transfer gain, K2 = IP2/IF. Theoutput gain equation is Vo = IP2 x R2. Solving for LED currentby combing the preceding equations results in:

The composite DC transfer function of the input and outputamplifiers can be determined when the equations 5 and 6are combined resulting in the voltage gain equation:

For simplicity, the ratio of K2/K1 is defined as the transfergain, K3. The transfer gain can be rewritten as:

The coupler’s transfer gain (K3) is determined by thebifurcation of the LED’s optical path within the couplerpackage. The time, temperature, and LED current have littleeffect on the transfer gain (figure 7).

60504030201000

200

400

600

800

Ta = 25 °C

Ice - Collector Emitter Current (mA)

HF

E -

Tra

nsis

tor

Cur

rent

Gai

n

Ta = 70 °C

Vce = 10 V

Ta= 50 °C

Ta = 25 °C

17836

Vce = 0.4 V

ICE = IF x ηe IF, TJ, time( ) x Kφ T, A, S( ) x Rφ x HFE lb, TJ, VCE( )

[]

(4)

IF = Vin

K1 x R1--------------------- (5)

IF = VO

K2 x R2---------------------- (6)

VO

Vin------- = K2

K1------- x R2

R1------- (7)

VO

Vin------- = K3 x R2

R1------- (8)

Page 55: Bundle (1)

Optoelectronic Feedback Control Techniques for Linearand Switch Mode Power Supplies

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PL

ICA

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OT

EApplication Note 55

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Rev. 1.5, 18-Oct-11 4 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 6 - Optical Feedback Amplifier

Fig. 7 - IL300 Transfer Gain, K3

Fig. 8 - IL300 Frequency and Phase Response

Fig. 9 - SMPS Block Diagram

VCC

OP-07

+3

210 kΩ

R1

Vin = 0 to + 1 V

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

6

OP-07

+

6

–2

3

10 kΩ

R2

Vin

Vout

R3100 Ω

Ip1

I F

GND 2

GND 1

100 pF

17837

25201510500.990

0.995

1.000

1.005

1.010

IF - LED Current (mA)

K3

- T

rans

fer

Gai

n (K

2/K

1)

Normalized to IF = 10 mA, TA = 25 °C

0 °C

50 °C

75 °C

17838

25 °C

106105104103102101- 15

- 10

- 5

0

5

10

- 180

- 135

- 90

- 45

0

45

Amplitude

Phase

Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

Ø -

Pha

se R

espo

nse

(°)

MOD = 40 %

17839

TA = 25 °C, VR = 10 V,RL = 2.2 k, IQ = 10 mA

Mains AC/DCrectifier

Switch

Regulator

XformerAC/DCrectifier

Control Isolatedfeedback

DC output

17840

Page 56: Bundle (1)

Optoelectronic Feedback Control Techniques for Linearand Switch Mode Power Supplies

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EApplication Note 55

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Rev. 1.5, 18-Oct-11 5 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 10 - + 5 V Isolated Feedback Amplifier

Figure 7 shows that the IL300’s gain typically varies by only± 0.2 % over an LED current range of 5 mA to 20 mA, andhas a temperature stability of ± 50 ppm/°C.

Figure 8 shows the frequency and phase response curvethat shows the - 3 dB point and a phase shift of 45° occur ata frequency in excess of 100 kHz.

The optical feedback technique greatly improves the maincharacteristic needed for a feedback amplifier used in alinear power supply.

MAINS ISOLATED SWITCHING POWER SUPPLYToday’s mains connected switch mode power suppliesrequire an insulated and isolated output voltage controlmethod. Standard phototransistor optocoupler are one ofthe various techniques used to effect this regulation. Withthe goal of high switching frequencies, the use ofphototransistors is being pushed to its frequency responselimits. Most power supply designers have found that gainand phase flatness can only be assured to operatingfrequencies of ≤ 10 kHz. Given these limitations, designersare considering the optical feedback optocoupler.

Figure 9 shows a block diagram of a typical SMPS. Theisolated feedback section can be viewed as an isolatedpiece of wire connecting the DC output to the control pin ofthe switch mode regulator. A simple design using a LM201low-cost differential op-amp is shown in figure 10. R1 andR2 function as a voltage divider, dividing the + 5 V supplyoutput to 3 V. The servo/feedback photodiode sources afeedback current (IP1) to R1 (30 kΩ). This resistor willdevelop 3 V when 100 μA flows through it. With K3 = 1, asimilar value of 100 μA will flow through R5 (30 kΩ).

Thus IP2 of 100 μA will develop the 3 V DC signal needed bythe control pin of the regulator. Figure 11 shows the DCresponse of this amplifier. Figure 12 shows the phase andfrequency response.

Fig. 11 - LM201 DC Transfer Gain

Fig. 12 - LM201 Phase and Frequency Response

This feedback circuit offers linearity and gain accuracy of± 0.02 % over a 4.0 V to 6.0 V input (figure 13).

To regulator input

R5

100 pF8

R46

+VCC1

+ 5 V

3

2

7

4

LM20 1

VCC

100 Ω

20 kΩR1

R2

R3

VCC1VCC2

U1

1

Va

Vb

3

5

6

7

8IL300

2

4

1

K1 K2

IP1 IP2

17841

30 kΩ

30 kΩ30 kΩ

6.05.55.04.54.02.25

2.50

2.75

3.00

3.25

3.50

3.75

Vin - Input Voltage (V)

Vou

t - O

utpu

t Vol

tage

(V

)

17842

Vout = 14.4 mV + 0.6036 x Vin LM201 Ta = 25 °C

106105104103102- 8

- 6

- 4

- 2

0

2

- 180

- 135

- 90

- 45

0

45

dB

PHASE

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

Pha

seR

espo

nse

- °

17843

LM201, Ta = 25 °C

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Rev. 1.5, 18-Oct-11 6 Document Number: 83711

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Fig. 1 - LM201 Linearity Error

The previous examples use differential amplifiers as thesumming device. It is possible to configure a single-inputDC amplifier that will perform the sample optical-servocontrol. One such design is shown in figure 14.

Figure 14 shows a DC-coupled current feedback amplifier.Q1 and Q2 form the gain stages. The feedbackphotocurrent, IP, is supplied to the summing network at VA.By inspection, the nodal equation indicates that thephotocurrent will be that necessary to create a 2 VBE dropacross R1. The input resistor is also sourcing current to thisnode. Thus, as the input voltage rises, the photocurrent willdrop. For this reason this amplifier functions as an invertingamplifier

Fig. 2 - Discrete Isolation Amplifier

The frequency response and phase response for figure 14 isshown in figure 15.

Fig. 13 - Discrete Isolation Phase and Frequency Response

Given this circuit’s simplicity, gain accuracy and linearity arenot compromised. The linearity error for this amplifier is± 0.015 %, as shown in figure 16.

Fig. 14 - Discrete Isolation Linearity Error

Most power supply designers are familiar with TL431 andLM4041 precision adjustable zener diodes. When you lookmore closely at the internal operation of this device you willfind that it too can function as a optical feedback amplifierfor the IL300 (figure 17).

4.0 4.5 5.0 5.5 6.0 - 0.015

- 0.010

- 0.005

0.000

0.005

0.010

0.015

0.020

0.025

Vin - Input Voltage (V)

Line

arity

Err

or (

%)

LM201

17844

MPSA12MPSA10

4.7 kΩ

100 Ω 10 kΩ

104 kΩ

5 V VCC1

GND2

Vin

GND1

5 V VCC2

Vout

25.5 kΩ

IIN

R1Pi

ib

vb

3

5

6

7

8IL300

2

4

1

K1 K2

IP1 IP2

Rin

R2

R3 R4

Q1 Q2

Ri

17845

106105104103102- 15

- 10

- 5

0

5

- 135

- 90

- 45

0

45

dB

Phase

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

Ø -

Pha

se R

espo

nse

(°)

17846

Phase response referenceto amplifier gain of - 1; 0° = 180°

5.505.255.004.754.50- 0.02

- 0.01

0.00

0.01

0.02

Vin - Input Voltage (V)

Gai

n Li

near

ity E

rror

(%

)

TA = 25 °C

17847

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Fig. 15 - Shunt Voltage Regulator

The three terminal regulators include U1, Q1, and theprecision reference, Vref. The linear coupler will supplysufficient photocurrent to develop a difference voltageacross R1. The transfer equation for this amplifier is given inequation 9:

The precision voltage reference (Vref) is 2.5 V for the TL43.When lower voltage supplies, i.e. 3.3 V, are to be regulated,the new LM4041 with a reference of 1.225 V can be used.

The designer may be more familiar with the circuitschematic shown in figure 18.

Fig. 16 - Shunt Voltage Regulator Isolation Amplifier

CONCLUSIONThis application note was a generic presentation of the DCmodel of the standard phototransistor. Most designers haveovercome many of standard phototransistor’s temperatureand initial gain variations by selecting well-specifiedcouplers such as the CNY17-X family.

When wider bandwidth and greater gain stability is required,power supply designers are using the new optical feedbacklinear optocouplers. The circuits provided and theirperformance characteristic will satisfy even the mostdemanding high-frequency SMPS applications.

2N3906

3

5

6

7

8IL300

2

4

1

K1 K2

IP1 IP2Vout

VCC2

+

-

100 Ω

R2

GND2

R1

Vref

U1

Q2Q1

+

V- Supply monitor

TL431

LM4041

1.5 kΩ

17848

VO

Vin - Vref------------------------ = R2

R1------- x K3 (9)

GND2

Vout

3

5

6

7

8IL300

2

4

1

K1 K2

IP1 IP 2

TL431

100 Ω 2N3906

R1

GND1

+

-U1

Q1

1.5 kΩVCC2

R2

17849

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Optocouplers and Solid-State Relays Application Note 42

Optocouplers in Switching Power Supplies

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Rev. 1.7, 29-Nov-11 1 Document Number: 80065

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The following provide information on how to useoptocouplersin designs to protect against electric shock.Safety standards for optocouplers are intended to preventinjury or damage due to electric shock Two levels ofelectrical interface are normally used:

• Reinforced, or safe insulation is required in an optocouplerinterface between a hazardous voltage circuit (like an ACline) and a touchable safety extra low voltage (SELV)circuit.

• Basic insulation is required in an optocoupler interfacebetween a hazardous voltage circuit and a non-touchableextra low voltage (ELV) circuit.

The most widely used insulation for optocouplers inswitch-mode power supply is reinforced insulation (class II).The following information enables the designer tounderstand the safety aspects, the basic concept of theDIN EN 60747-5-5 (VDE0884) and the design requirementsfor applications.

FACTS AND INFORMATION (1)

Optocouplers for line-voltage separation must have severalnational standards. The most accepted standards are:

• UL for America

• UL/CSA for Canada

• CQC for China

• BSI for Great Britain

• FIMKO, SEMKO, NEMKO, DEMKO for Nordic countries(Europe)

• VDE for Germany

Today, most manufacturers operate on a global scale.Therefore, it is important to understand and meet thoserequirements.The DIN EN 60747-5-5 (VDE 0884) is a major safetystandard in the world.The DIN EN 60747-5-5 (VDE0884) standard andIEC 60047C/199/CD standards may become part ofIEC 60747-5.If design engineers work with Vishay optocouplers, they willfind some terms and definitions in the data sheets whichrelate to DIN EN 60747-5-5 (VDE0884).

Rated Isolation Voltages

VISO is the voltage between the input terminals and theoutput terminals.Note: All voltages are peak voltages!

• VIOWM is a maximum RMS. voltage value of theoptocouplers assigned by Vishay. This characterizes thelong term withstand capability of its insulation

• VIORM is a maximum recurring peak (repetitive) voltagevalue of the optocoupler assigned by Vishay. Thischaracterizes the long-term withstand capability againstrecurring peak voltages

• VIOTM is an impulse voltage value of the optocouplerassigned by Vishay. This characterizes the long-termwithstand capability against transient over voltages.

Isolation test voltage for routine tests is at factor 1.875higher than the specified VIOWM/VIORM (peak).A partial discharge test is a different test method to thenormal isolation voltage test. This method is more sensitiveand will not damage the isolation behavior of theoptocoupler like other test methods probably do. The DINEN 60747-5-5 (VDE 0884) therefore does not require aminimum thickness through insulation. The philosophy isthat a mechanical distance only does not give you anindication of the safety reliability of the coupler. It isrecommended that construction together with theassembling performance. The partial discharge testmethod can monitor this more reliably.The following tests must be done to guarantee this safetyrequirement.100 % test (piece by piece) for one second at a voltage levelof specified VIOWM/VIORM (peak) multiplied by 1.875 (1) testcriteria is partial discharge less than 5 pC.A lotwise test at VIOTM for 10 s and at a voltage level ofspecified VIOWM/VIORM (peak) multiplied by 1.5 for 1 min (1) testcriteria is partial discharge less than 5 pC.

Design Example

The line AC voltage is 380 VRMS. Your application class is III(DIN/VDE 0110 Part 1/1.89). According to table 1, you mustcalculate with a maximum line voltage of 600 V and atransient over voltage of 6000 V.

Note(1) See safety agency application note for more information

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Now select the TCDT1100 from our Vishay coupler program.The next voltage step of 380 V is 600 V (VIOWM).The testvoltages are 1600 V for the TCDT1100 for the routine testand 6000 V/1300 V for the sample test.

The DIN EN 60747-5-5 (VDE 0884) together with theisolation test voltages also require very high isolationresistance, tested at an ambient temperature of 100 °C.

Apart from these tests for the running production, the VDETesting and Approvals Institute also investigates the totalconstruction of the optocoupler.

The DIN EN 60747-5-5 (VDE 0884) requires life tests in avery special sequence; 5 lots for 5 different subgroups aretested.

The sequence for the main group is as follows:

• Cycle test

• Vibration

• Shock

• Dry heat

• Accelerated damp heat

• Low temperature storage (normally - 55 °C)

• Damp heat steady state

• Final measurements

Finally there is another chapter concerning the safetyratings. This is described in DIN EN 60747-5-5 (VDE 0884).The maximum safety ratings are the electrical, thermal andmechanical conditions that exceed the absolute maximumratings for normal operations. The philosophy is thatoptocouplers must withstand a certain exceeding of theinput current, output power dissipation, and temperature forat least 72 h. This is a simulated space of time where failuresmay occur. It is the designer’s task to create his designinside of the maximum safety ratings.

Optocouplers - approved to the DIN EN 60747-5-5(VDE 0884) - must consequently pass all tests undertaken.This enables you to go ahead and start your design.

LAYOUT DESIGN RULESThe previous chapter described the important safetyrequirements for the optocoupler itself; but the knowledgeof the creepage distance and clearance path is alsoimportant for the design engineer if the coupler is to bemounted onto the circuit board. Although several differentcreepage distances refer to different safety standards, e.g.IEC 60065 for TV or the IEC 60950 for office equipment,computer, data equipment etc. there is one distance whichdominates switching power supplies: This is the 8 mmspacing requirement between the two circuits: Thehazardous input voltage (AC 240 power-line voltage) and thesafety low voltage.

This 8 mm spacing is related to the 250 V power line anddefines the shortest distance between the conductive parts(either from the input to the output leads) along the case ofthe optocoupler, or across the surface of the print boardbetween the solder eyes of the optocoupler input/ outputleads, as shown in figure 1. The normal distance input tooutput leads of an optocoupler is 0.3". This is too tight forthe 8 mm requirement. The designer now has two options:He can provide a slit in the board, but then the airgap is stilllow or.

Depending on the product, option 1 or the "G" version canbe used e.g. SFH619-X001 or TCDT1100G.“G” stands for a wide-spaced lead form of 0.4" and meetsthe 8 mm spacing.

The spacing requirements of the 8 mm must also be takeninto consideration for the layout of the board.

Figures 2 and 3 provide examples for your layout.

The creepage distance is also related to the resistance ofthe tracking creepage current stability. The plastic materialof the optocoupler itself and the material of the board mustprovide a specified creepagecurrent resistance.

The behavior of this resistance is tested with special testmethods described in the IEC 112. The term is CTI(comparative tracking index).

The DIN EN 60747-5-5 (VDE 0884) requires a minimum of aCTI of 175.

TABLE 1 - RECCOMENDED TRANSIENT OVERVOLTAGES RELATED TO AC/DC LINE VOLTAGE (PEAK VALUES)

VIOWM/VIORM up to Appl. Class I Appl. Class II Appl. Class III Appl. Class IV

50 V 350 V 500 V 800 V 1500 V

100 V 500 V 800 V 1500 V 2500 V

150 V 800 V 1500 V 2500 V 4000 V

300 V 1500 V 2500 V 4000 V 6000 V

600 V 2500 V 4000 V 6000 V 8000 V

1000 V 4000 V 6000 V 8000 V 12000 V

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Rev. 1.7, 29-Nov-11 3 Document Number: 80065

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Fig. 1 - Isolation Creepage/Clearance Path Along the Body

(The creepage path is the shortest distance betweenconductive parts along the surface of the isolation material.

The clearance path is the shortest distance betweenconductive parts.)

Fig. 2 - Isolation Creepage/Clearance Path after Mounting on a Board (Side View)

Fig. 3 - “Top View of Optocoupler Mounting on a Board”(Clearance on PC Board: 0.322/8.2 mm, Creepage Path on PC

Board is 0.322/8.2 mm)

Not only the solder eyes of the coupler itself on the boardmust have the 8 mm distance, but also all layers locatedbetween the SELV areas and the power interface areas.

Creepagepath

Clearance path

18181

0.4"/10.16 mm

0.332"/8.2 mm18182

G

G

G G

SELV control circuit area

SELV control circuit area

G = 0.322"/8.2 mm

Power interface area

Layer

18183

Power interface area

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V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 48

Optocoupler for Safe Electrical Isolation toDIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 Pending

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Rev. 1.4, 11-Oct-11 1 Document Number: 83707

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Because of their high reliability and long life,optocouplers are used in applications requiring safeelectrical isolation of two circuits, such as inswitchmode power supplies (SMPS). Optocouplers haveto comply with the relevant VDE standards and/orinternational standards like IEC when used forprotecting systems against electrical damage.

Currently the tendency is to incorporate internationalstandards (e.g. IEC) into the German VDE regulations. Onthe other hand, the goal is to make a national VDE standard(such as one that has proved to increase safety) into aninternationally recognized IEC standard. For example, a newstandard, DIN EN 60747-5-5 (VDE 0884), has just beenintroduced in Germany and also is being reviewed in variousinternational standardization committees.

German VDE standards are divided into three main groups:

• Basic VDE standards, such as VDE 0110 which describesair and creepage path requirements in general

• VDE standards governing components, such as therecently expired VDE 0883 standard for optocouplers

• VDE standards governing systems and equipment, suchas VDE 0805/0806 for office machines and EDP systems

Optocouplers used in a computer SMPS have to satisfy therequirements of VDE 0883 and VDE 0805/0806.

Thickness of solid insulation between conducting parts, theisolation test voltage and the air and creepage paths arecrucial in applications requiring reliable electrical isolation.Depending on the sensitivity of the application, differentvalues are given in the VDE standards.

For example, an electrical control cabinet will probably beopened and operated infrequently and only by skilled staff.However, it's not unusual for a cup of coffee to be spilledaccidentally over the keyboard of an electric typewriter.Thus the requirements to be met in the two cases are verydifferent.

The latest findings in high-voltage technology havequestioned the two parameters of thickness of solidinsulation and isolation test voltage. Dielectric strength doesincrease with the thickness of the insulating material, butonly when the insulating material is homogeneous and freeof impurities or air-pockets. A high-quality thin insulationcan be better than a thick layer with impurities orair-bubbles. The trend is clearly towards reducing insulation

thickness (about 0.3 mm to 0.5 mm) for more economicalmanufacturing and technologically advanced optocouplerfunctions.

To test the breakdown strength, isolation test voltagenormally lasts 60 s in qualification tests and up to onesecond in 100 % inspection (depending on the particularVDE standard). However, no determination is made whetherany partial discharge occurs in the insulation material duringtesting. This requires measurement equipment of extremesensitivity which has been introduced on the market onlyrecently.

Studies in high-voltage technology have shown that a singlepartial discharge will probably not be extinguished at lowvoltages and that a permanent partial discharge maydegrade and damage the insulating material. Even undernormal operating conditions, therefore, partial dischargemay occur when the operating voltage is applied. Ahigh-voltage breakdown is likely to occur after a certain timeof operation.

The new standard for optocouplers, DIN EN 60747-5-5(VDE 0884), used for safe electrical isolation, addresses thetwo drawbacks mentioned earlier. Suitable dielectricstrength is now determined by the presence of partialdischarges at a defined test voltage. Partial dischargesoccur when there are impurities or air-bubbles in theinsulating material or if the solid insulation is too thin.

The conventional breakdown test (isolation test voltage)may risk causing initial damage to the optocoupler which isnot detectable. This test has been replaced in DIN EN60747-5-5 by the partial discharge test which detects anypartial discharge. The absence of partial discharge duringthe test reliably proves the isolation capability without anyundesirable initial damage to the insulation material.

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PARTIAL DISCHARGE MEASUREMENT METHOD PER DIN EN 60747-5-2 (VDE 0884)/ DIN EN 630747-5-5 PENDINGTwo measurement methods, as described inDIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending,have proved to be reliable and suitable for optocouplers.

• Measurement method Aa destructive test to qualify optocouplers and for sampletesting in manufacture

• Measurement method Ba non-destructive test of every component (100 %inspection)

• Figures 1 and 2 show two typical voltage time curves(AC voltage peak-to-peak values) for Vishay optocouplertesting per DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending

A destructive test for the qualification of optocouplers andsample testing in manufacture. This time-test voltagediagram can be used with SFH601 and CNY17 couplers.

Fig. 1 - Measurement Method A of DIN EN 60747-5-5 (VDE 0884)

A non-destructive test of every component (100 %inspection).

Fig. 2 - Measurement Method B

MORE DIN EN 60747-5-2 (VDE 0884)/ DIN EN 630747-5-5 PENDING TEST CRITERIA FOR SAFE ELECTRICAL ISOLATION BY OPTOCOUPLERSIn addition to the partial discharge test, DIN EN 60747-5-2(VDE 0884)/DIN EN 60747-5-5 pending has furtherrequirements to improve optocoupler reliability. Forexample, data on reliability limits such as limit current,temperature, and/or power dissipation must be given forevery approved and qualified component. Figure 3 showsthe reliability limit values for SFH601 and CNY17optocouplers.

Limit values are generally higher than the maximum ratings.They indicate whether and if additional components arerequired in the circuit to ensure safe electrical isolation incase of failure in the surrounding circuitry.

In the qualification test (destructive test) the optocoupler isexposed to numerous tests in rugged environments such ashumidity cycles or temperature shocks. The optocouplersare then stressed to the limit values for 72 h. Finally, they aretested for partial discharge. Absence of partial discharge(PD) currently means a value below 5 picocoulombs.

Importance of DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending standard for the future.

Optocouplers used in applications for safe electricalisolation are tested for freedom from partial discharge togive improved reliability and useful information on the longterm stability of insulating materials. DIN EN 60747-5-2

VINITIAL (6 kV)

V (1 kV)Pr

t1 tini t2

t3 tp

tp (measurement time for PD) = 10 stb = 12 stini = 60 st1, t2 = 1 to10 st3, t4 = 1 s

tbt

t4

VIORM(630 V)

V

17499

VPr (1 kV)

t3 tp

tp (measurement time for PD) = 1 stb = 1.2 st3, t4 = 0.1 s

tb t

t4

VIORM(630 V)

V

17500

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(VDE 0884)/DIN EN 60747-5-5 pending is only a first step inthis direction. Partial discharge measurements probably willbecome applicable to transformers, capacitors, and othercomponents. VDE 0883 is no longer the standard sinceDecember 1988. However, until the end of 1991 approvalsto VDE 0883 were accepted in the marketplace.

From 1992 optocouplers must have DIN EN 60747-5-2(VDE 0884)/DIN EN 60747-5-5 pending approval. Newdesigns of PC boards or systems using optocouplers whichhave to fulfil the requirements of safe electrical isolation,must use only optocouplers with DIN EN 60747-5-2(VDE 0884)/DIN EN 60747-5-5 pending approval.

Vishay already offers the SFH601 and CNY17 optocouplerswith DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5pending approval under option 1. Other types, especiallyDIP-4 series, have been approved and are available.

For every optocoupler type approved to DIN EN 60747-5-2(VDE 0884)/DIN EN 60747-5-5 pending, reliability limitvalues such as limit temperature, current and powerdissipation must be given.

Fig. 3 - Dependency of Reliability Maximum Ratings on Ambient Temperature for SFH601, CNY174

100 125 150 1750

100

200

300

400

500

I SI

PS

I

υA

(=υSI)

ISIPSI

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Optocouplers Application Note 50

Designing Linear Amplifiers Using the IL300 Optocoupler

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Rev. 1.6, 20-Mar-12 1 Document Number: 83708

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INTRODUCTIONThis application note presents isolation amplifier circuitdesigns useful in industrial, instrumentation, medical, andcommunication systems. It covers the IL300’s couplingspecifications, and circuit topologies for photovoltaic andphotoconductive amplifier design. Specific designs includeunipolar and bipolar responding amplifiers. Both singleended and differential amplifier configurations arediscussed. Also included is a brief tutorial on the operationof photodetectors and their characteristics.

Galvanic isolation is desirable and often essential in manymeasurement systems. Applications requiring galvanicisolation include industrial sensors, medical transducers,and mains powered switchmode power supplies. Operatorsafety and signal quality are insured with isolatedinterconnections. These isolated interconnectionscommonly use isolation amplifiers.

Industrial sensors include thermocouples, strain gauges,and pressure transducers. They provide monitoring signalsto a process control system. Their low level DC and ACsignal must be accurately measured in the presence of highcommon-mode noise. The IL300’s 130 dB common moderejection (CMR), ± 50 ppm/°C stability, and ± 0.01 %linearity provide a quality link from the sensor to thecontroller input.

Safety is an important factor in instrumentation for medicalpatient monitoring. EEG, ECG, and similar systems demandhigh insulation safety for the patient under evaluation. TheIL300’s 7500 V withstand test voltage (WTV) insulation, DCresponse, and high CMR are features which assure safetyfor the patient and accuracy of the transducer signals.

The aforementioned applications require isolated signalprocessing. Current designs rely on A to D or V to Fconverters to provide input/output insulation and noiseisolation. Such designs use transformers or high-speedoptocouplers which often result in complicated and costlysolutions. The IL300 eliminates the complexity of theseisolated amplifier designs without sacrificing accuracy orstability.

The IL300’s 200 kHz bandwidth and gain stability make it anexcellent candidate for subscriber and data phoneinterfaces. Present OEM switch mode power supplies areapproaching 1 MHz switching frequencies. Such suppliesneed output monitoring feedback networks with widebandwidth and flat phase response. The IL300 satisfiesthese needs with simple support circuits.

OPERATION OF THE IL300The IL300 consists of a high-efficiency AlGaAs LED emittercoupled to two independent PIN photodiodes. The servophotodiode (pins 3, 4) provides a feedback signal whichcontrols the current to the LED emitter (pins 1, 2). Thisphotodiode provides a photocurrent, IP1, that is directlyproportional to the LED’s incident flux. This servo operationlinearizes the LED’s output flux and eliminates the LED’stime and temperature. The galvanic isolation between theinput and the output is provided by a second PINphotodiode (pins 5, 6) located on the output side of thecoupler. The output current, IP2, from this photodiodeaccurately tracks the photocurrent generated by the servophotodiode.

Figure 1 shows the package footprint and electricalschematic of the IL300. The following sections discuss thekey operating characteristics of the IL300. The IL300performance characteristics are specified with thephotodiodes operating in the photoconductive mode.

Fig. 1 - IL300 Schematic

SERVO GAIN - K1The typical servo photocurrent, IP1, as a function of LEDcurrent, is shown in figure 2. This graph shows the typicalnon-servo LED-photodiode linearity is ± 1 % over an LEDdrive current range of 1 to 30 mA. This curve also shows thatthe non-servo photocurrent is affected by ambienttemperature. The photocurrent typically decreases by- 0.5 % per °C. The LED’s nonlinearity and temperaturecharacteristics are minimized when the IL300 is used as aservo linear amplifier.

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

17752

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Fig. 2 - Servo Photocurrent vs. LED Current

The servo gain is defined as the ratio of the servophotocurrent, IP1, to the LED drive current, IF. It is called K1,and is described in equation 1.

(1)

The IL300 is specified with an IF = 10 mA, TA = 25 °C, andVd = - 15 V. This condition generates a typical servophotocurrent of IP1 = 70 μA. This results in a typicalK1 = 0.007. The relationship of K1 and LED drive current isshown in figure 3.

Fig. 3 - Servo Gain vs. LED Current

The servo gain, K1, is guaranteed to be between 0.005minimum to 0.011 maximum of an IF = 10 mA, TA = 25 °C,and VD = 15 V.

Fig. 4 - Normalized Servo Gain vs. LED Current

Figure 4 presents the normalized servo gain, NK1(IF, TA), asa function of LED current and temperature. It can be used todetermine the minimum or maximum servo photocurrent,IP1, given LED current and ambient temperature. The actualservo gain can be determined from equation 2.

(2)

The minimum servo photocurrent under specific useconditions can be determined by using the minimum valuefor K1 (0.005) and the normalization factor from figure 4. Theexample is to determine IP1 (min.) for the condition of K1 atTA = 75 °C, and IF = 6 mA.

(3)

(4)

(5)

Using K1(IF, TA) = 0.0036 in equation 1 the minimum IP1 canbe determined.

(6)

(7)

(8)

The minimum value IP1 is useful for determining themaximum required LED current needed to servo the inputstage of the isolation amplifier.

OUTPUT FORWARD GAIN - K2Figure 1 shows that the LED's optical flux is also received bya PIN photodiode located on the output side (pins 5, 6) of thecoupler package. This detector is surrounded by an opticallytransparent high-voltage insulation material. The couplerconstruction spaces the LED 0.4 mm from the output PINphotodiode. The package construction and the insulationmaterial guarantee the coupler to have a withstand testvoltage of 7500 V peak.

0 5 10 15 20 25 300

50

100

150

200

250

300

0 °C25 °C50 °C75 °C

IF - LED Current - mA

IP1

- S

ervo

Pho

tocu

rren

t (µ

A)

17753

K1 IP1 IF⁄=

IF - LED Current (mA)

0.1 1 10 1000

K1-

Ser

voG

ain

-I P

1/I F

0.010

0.008

0.006

0.004

0.002

25°50°75°

100°

17754

0.0

0.2

0.4

0.6

0.8

1.0

1.2

IF - LED Current (mA)

NK

1 -

Nor

mal

ized

Ser

vo G

ain

0 °25 °

50 °75 °

100 °

Normalized to:IF = 10 mA, TA = 25 °C

17755

0.1 1 10 100

K1 IF TA,( ) K1 datasheet limit( ) NK1 IF TA,( )⋅=

NK1 IF 6 mA TA 75 °C=,=( ) 0.72 NK1 IF TA,( )⋅=

K1 MIN IF TA,( ) K1 MIN 0.005( ) NK1 0.72( )⋅( )=

K1 MIN IF TA,( ) 0.0036=

IP1MIN K1 MIN IF TA,( ) IF⋅( )=

IP1MIN 0.0036 6 mA⋅=

IP1MIN IF 6 mA TA 75 °C=,=( ) 21.6 μA=

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Rev. 1.6, 20-Mar-12 3 Document Number: 83708

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K2, the output (forward) gain is defined as the ratio of theoutput photodiode current, IP2, to the LED current, IF. K2 isshown in equation 9.

(9)

The forward gain, K2, has the same characteristics of theservo gain, K1. The normalized current and temperatureperformance of each detector is identical. This results fromusing matched PIN photodiodes in the IL300’s construction.

TRANSFER GAIN - K3The current gain, or CTR, of the standard phototransistoroptocoupler is set by the LED efficiency, transistor gain, andoptical coupling. Variation in ambient temperature alters theLED efficiency and phototransistor gain and results in CTRdrift. Isolation amplifiers constructed with standardphototransistor optocouplers suffer from gain drift due tochanging CTR.Isolation amplifiers using the IL300 are not plagued with thedrift problems associated with standard phototransistors.The following analysis will show how the servo operation ofthe IL300 eliminates the influence of LED efficiency on theamplifier gain. The input-output gain of the IL300 is termed transfer gain,K3. Transfer gain is defined as the output (forward) gain, K2,divided by servo gain, K1, as shown in equation 10.

(10)

The first step in the analysis is to review the simple opticalservo feedback amplifier shown in figure 5.The circuit consists of an operational amplifier, U1, afeedback resistor R1, and the input section of the IL300. Theservo photodiode is operating in the photoconductivemode. The initial conditions are:

. Initially, a positive voltage is applied to the nonirritating input(Va) of the op amp. At that time the output of the op amp willswing toward the positive Vcc rail, and forward bias the LED.As the LED current, IF, starts to flow, an optical flux will begenerated. The optical flux will irradiate the servophotodiode causing it to generate a photocurrent, IP1. Thisphotocurrent will flow through R1 and develop a positivevoltage at the inverting input (Vb) of the op amp. Theamplifier output will start to swing toward the negativesupply rail, - VCC. When the magnitude of the Vb is equal tothat of Va, the LED drive current will cease to increase. Thiscondition forces the circuit into a stable closed loopcondition.

Fig. 5 - Optical Servo Amplifier

When Vin is modulated, Vb will track Vin. For this to happenthe photocurrent through R1 must also track the change inVa. Recall that the photocurrent results from the change inLED current times the servo gain, K1. The followingequations can be written to describe this activity.

(11)

(12)

(13)

The relationship of LED drive to input voltage is shown bycombining equations 11, 12, and 13.

(14)

(15)

(16)

Equation 16 shows that the LED current is related to theinput voltage Vin. A changing Va causes a modulation in theLED flux. The LED flux will change to a level that generatesthe necessary servo photocurrent to stabilize the opticalfeedback loop. The LED flux will be a linear representationof the input voltage, Va. The servo photodiode’s linearitycontrols the linearity of the isolation amplifier.

The next step in the analysis is to evaluate the output transresistance amplifier. The common inverting trans resistanceamplifier is shown in figure 6. The output photodiode isoperated in the photoconductive mode. The photocurrent,IP2, is derived from the same LED that irradiates the servophotodetector. The output signal, Vout, is proportional to theoutput photocurrent, IP2, times the trans resistance, R2.

Vout = - IP2 ⋅ R2 (17)

(18)

Combining equations 17 and 18 and solving for IF is shownin equation 19.

(19)

K2 IP1 IF⁄=

K3 K2 K1⁄=

Va Vb 0= =

6

-

+3

2

7

4

R1

VCC

U1Va

Vb

Vin I F

+

IP1

3

IL300

2

4

1

K1

17756

VCC

IP1

Va Vb Vin 0= = =

IP1 IF K1⋅=

Vb IP1 R1⋅=

Va IP1 R1⋅=

Vin IF K1 R1⋅ ⋅=

IF Vin K1 R1⋅( )⁄=

IP2 K2 IF⋅=

IF - Vout K2 R2⋅( )⁄=

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Fig. 6 - Optical Servo Amplifier

The input-output gain of the isolation amplifier is determinedby combining equations 16 and 19.

(16)

(19)

(20)

(21)

Note that the LED current, IF, is factored out of equation 21.This is possible because the servo and output photodiodecurrents are generated by the same LED source. Thisequation can be simplified further by replacing the K2/K1ratio with IL300’s transfer gain, K3.

(22)

The IL300 isolation amplifier gain stability and offset driftdepends on the transfer gain characteristics. Figure 7 showsthe consistency of the normalized K3 as a function of LEDcurrent and ambient temperature. The transfer gain drift asa function of temperature is ± 0.005 %/°C over a 0 °C to75 °C range.

Figure 8 shows the composite isolation amplifier includingthe input servo amplifier and the output trans resistanceamplifier. This circuit offers the insulation of an optocouplerand the gain stability of a feedback amplifier.

Fig. 7 - Normalized Servo Transfer Gain

An instrumentation engineer often seeks to design anisolation amplifier with unity gain of Vout/Vin = 1.0. TheIL300’s transfer gain is targeted for: K3 = 1.0.

Package assembly variations result in a range of K3.Because of the importance of K3, Vishay offers the transfergain sorted into ± 5 % bins. The bin designator is listed onthe IL300 package. The K3 bin limits are shown in table 1.This table is useful when selecting the specific resistorvalues needed to set the isolation amplifier transfer gain.

U2 6

-

+3

2

7

4

VoutVCC

R2IP2

5

6

7

8IL300

K2

IP2

17757

VCC

IF Vin K1 R1⋅( )⁄=

IF - Vout K2 R2⋅( )⁄=

Vin K1 R1⋅( )⁄ - Vout K2 R2⋅( )⁄=Vout Vin⁄ K2 R2⋅( ) K1 R1⋅( )⁄–=

Vout Vin⁄ - K3 R2 R1⁄( )⋅= TABLE 1 - K3 TRANSFER GAIN BINSBIN TYP. MIN. MAX.

A 0.59 0.56 0.623

B 0.66 0.623 0.693

C 0.73 0.693 0.769

D 0.81 0.769 0.855

E 0.93 0.855 0.95

F 1.0 0.95 1.056

G 1.11 1.056 1.175

H 1.24 1.175 1.304

I 1.37 1.304 1.449

J 1.53 1.449 1/61

0 5 10 15 20 25 0.990

0.995

1.000

1.005

1.010

IF - LED Current (mA)

K3

- T

rans

fer

Gai

n (K

2/K

1)

Normalized to IF = 10 mA, TA = 25 °C

0 °C

25 °C

50 °C

75 °C

Non - servoed

17758

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Fig. 8 - Composite Amplifier

ISOLATION AMPLIFIER DESIGN TECHNIQUESThe previous section discussed the operation of an isolationamplifier using the optical servo technique. The followingsection will describe the design philosophy used indeveloping isolation amplifiers optimized for input voltagerange, linearity, and noise rejection.

The IL300 can be configured as either a photovoltaic orphotoconductive isolation amplifier. The photovoltaictopology offers the best linearity, lowest noise, and driftperformance. Isolation amplifiers using these circuitconfigurations meet or exceed 12 bit A to D performance.Photoconductive photodiode operation provides the largestcoupled frequency bandwidth. The photoconductiveconfiguration has linearity and drift characteristicscomparable to a 8 to 9 bit A to D converter.

PHOTOVOLTAIC ISOLATION AMPLIFIERThe transfer characteristics of this amplifier are shown infigure 9.

The input stage consists of a servo amplifier, U1, whichcontrols the LED drive current. The servo photodiode isoperated with zero voltage bias. This is accomplished byconnecting the photodiodes anode and cathode directly toU1’s inverting and non-inverting inputs. The characteristicsof the servo amplifier operation are presented in figure 9aand figure 9b. The servo photocurrent is linearly proportionalto the input voltage, . Figure 9b shows theLED current is inversely proportional to the servo transfer

gain, . The servo photocurrent, resulting fromthe LED emission, keeps the voltage at the inverting input ofU1 equal to zero. The output photocurrent, IP2, results fromthe incident flux supplied by the LED. Figure 9c shows thatthe magnitude of the output current is determined by theoutput transfer gain, K2. The output voltage, as shown infigure 9d, is proportional to the output photocurrent IP2. Theoutput voltage equals the product of the outputphotocurrent times the output amplifier’s trans resistance,R2.

When low offset drift and greater than 12 bit linearity isdesired, photovoltaic amplifier designs should beconsidered. The schematic of a typical positive unipolarphotovoltaic isolation amplifier is shown in figure 10.

The composite amplifier transfer gain (Vo/Vin) is the ratio oftwo products. The first is the output transfer gain, K2 · R2.

The second is the servo transfer gain, K1 · R1. The amplifiergain is the first divided by the second. See equation 23.

Fig. 9 - Positive Unipolar Photovoltaic Isolation Amplifier Transfer Characteristics

6

+3

2

7

4

VCC

R1

U1

Va

Vb

VinI F

+

IP1

3

5

6

7

8IL300

2

4

1

K1K2

U26

+

3

2

7

4

Vout

R2

17759

VCC

IP1 IP2

VCC

VCC

IP2

IP1 Vin R1⁄=

IF IP1 K1⁄=

IP1Vin+0

a

+

IF

0

b

Vout

+0

d

+0

c

R21K11

R1 K2

17760

IP1

IP2

IP2

IFIP1Vin

+0

a

+

IF

0

b

Vout

+0

d

+0

c

R21K11

R1 K2

17760

IP1

IP2

IP2

IF

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Fig. 10 - Positive Unipolar Photovoltaic Aamplifier

(23)

Equation 23 shows that the composite amplifier transfer gainis independent of the LED forward current. The K2/K1 ratioreduces to IL300 transfer gain, K3. This relationship isincluded in equation 24. This equation shows that thecomposite amplifier gain is equal to the product of the IL300gain, K3, times the ratio of the output to input resistors.

(24)

Designing this amplifier is a three step process. First, giventhe input signal span and U1’s output current handlingcapability, the input resistor R1 can be determined by usingthe circuit found in figure 9 and the following typicalcharacteristics:

OP-07 out = ± 15 mAL300 K1 = 0.007

K2 = 0.007K3 = 1.0

Vin 0 ≥ + 1.0 V

The second step is to determine servo photocurrent, IP1,resulting from the peak input signal swing. This current is theproduct of the LED drive current, IF, times the servo transfergain, K1. For this example the Ioutmax is equal to the largestLED current signal swing, i.e., IF = Ioutmax.

IP1 = K1 · IoutmaxIP1 = 0.007 · 15 mAIP1 = 105 μA

The input resistor, R1, is set by the input voltage range andthe peak servo photocurrent, IP1. Thus R1 is equal to:

R1 = Vin/IP1R1 = 1.0/105 μAR1 = 9.524 kΩR1 is rounded to 10 kΩ.

Fig. 11 - Photovoltaic Amplifier Transfer Gain

Fig. 12 - Photovoltaic Amplifier Frequency Response

VCC

OP-07

-

+3

2R1

+ Voltage3

5

6

7

8IL300

2

4

1

K1K2

IP1

6

OP-076

-2

3

10 kΩ

R2

Vin

Vout

IF

+17761

IP2

IP1

10 kΩ

1 kΩ

Vout

Vin----------- K2 R2⋅

K1 R1⋅--------------------=

Vout

Vin----------- K3 R2⋅

R1--------------------=

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Vin - Input Voltage (V)

Vou

t - O

utpu

t Vol

tage

(V

)

17762

101 102 103 104 105- 10

- 9

- 8

- 7

- 6

- 5

- 4

- 3

- 2

- 1

0

1

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

TA = 25 °C

17763

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Fig. 13 - Negative Unipolar Photovoltaic Isolation Amplifier

The third step in this design is determining the value of thetrans resistance, R2, of the output amplifier. R2 is set by thecomposite voltage gain desired, and the IL300’s transfergain, K3. Given K3 = 1.0 and a required Vout/Vin = G = 1.0,the value of R2 can be determined.

R2 = (R1 · G) / K3

R2 = (10 kΩ · 1.0) /1.0

R2 = 10 kΩWhen the amplifier in figure 9 is constructed with OP-07operational amplifiers it will have the characteristics shownin figure 11 and figure 12.The frequency response is shownin figure 12. This amplifier has a small signal bandwidth of45 kHz.

The amplifier in figure 9 responds to positive polarity inputsignals. This circuit can be modified to respond to negativepolarity signals.

The modifications of the input amplifier include reversing thepolarity of the servo photodiode at U1’s input andconnecting the LED so that it sinks current from U1’s output.The non inverting isolation amplifier response is maintainedby reversing the IL300’s output photodiodes connection tothe input of the trans resistance amplifier. The modifiedcircuit is shown in figure 13.

The negative unipolar photovoltaic isolation amplifiertransfer characteristics are shown in figure 14. Thisamplifier, as shown in figure 13, responds to signals in onlyone quadrant. If a positive signal is applied to the input ofthis amplifier, it will forward bias the photodiode, causing U1to reverse bias the LED. No damage will occur, and theamplifier will be cut off under this condition. This operationis verified by the transfer characteristics shown in figure 14.

Fig. 14 - Negative Unipolar Photovoltaic Isolation Amplifier Transfer Characteristics

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

OP-07

+3

2R1

- Voltage

6

Vin

IF

Vout

OP-076

–2

3

10 kΩR2

+17764

10 kΩ

1 kΩ

IP1

+

IF

0

b d

+

c

+

Vin- 0

a

-

IP1

-1R1

1K1

IP2

0

K2

Vout

0

- R2

17765

IP2

IP1 IF

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Fig. 15 - Bipolar Input Photovoltaic Isolation Amplifier

Fig. 16 - Bipolar Input Photovoltaic Isolation Amplifier Transfer Characteristics

A bipolar responding photovoltaic amplifier can beconstructed by combining a positive and negative unipolaramplifier into one circuit. This is shown in figure 15. Thisamplifier uses two IL300s with each detector and LEDconnected in anti parallel. The IL300a responds to positivesignals while the IL300b is active for the negative signals.The operation of the IL300s and the U1 and U2 is shown inthe transfer characteristics given in figure 16. Bipolar inputphotovoltaic isolation amplifier transfer characteristicsThe operational analysis of this amplifier is similar to thepositive and negative unipolar isolation amplifier. Thissimple circuit provides a very low offset drift andexceedingly good linearity. The circuit’s useful bandwidth is

limited by crossover distortion resulting from thephotodiode stored charge. With a bipolar signal referencedto ground and using a 5 % distortion limit, the typicalbandwidth is under 1 kHz. Using matched K3s, thecomposite amplifier gain for positive and negative voltagewill be equal.

Whenever the need to couple bipolar signals arises a prebiased photovoltaic isolation amplifier is a good solution. Bypre biasing the input amplifier the LED and photodetectorwill operate from a selected quiescent operating point. Therelationship between the servo photocurrent and the inputvoltage is shown in figure 17.

3

5

6

7

8IL300b

2

4

1

K1bK2b

U1

+3

2R1

3

5

6

7

8IL300a

2

4

1

K1aK2a

IP1a

6

U26

–2

3

R2

Vout

Vin

1 kΩ

+

17766

10 kΩ

10 kΩ

IP2a

IP2bIP1b

a b

0

c

0

Vout

+

d

R2

+0

IFa IP2a

IP2B

+

+

+

+

IP1a

0

+ +

I

-R2

IP1b+

1K1b

+

+IFb

K2b

++

Vin0 0 0

0+

1R1 K2a1

K1a

-1R1

17767Vout

VinIP1a

IFa

IP2a

IP2BIFbIP1b

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Fig. 17 - Transfer Characteristics Pre Biased Photovoltaic Bipolar Amplifier

Fig. 18 - Pre Biased Photovoltaic Isolation Amplifier

The quiescent operation point, IP1Q, is determined by thedynamic range of the input signal. This establishesmaximum LED current requirements. The output currentcapability of the OP-07 is extended by including a buffertransistor between the output of U1 and the LED. The buffertransistor minimizes thermal drift by reducing the OP-07internal power dissipation if it were to drive the LED directly. This is shown in figure 18. The bias is introduced into theinverting input of the servo amplifier, U1. The bias forces theLED to provide photocurrent, IP1, to servo the input back toa zero volt equilibrium. The bias source can be as simple asa series resistor connected to VCC. Best stability andminimum offset drift is achieved when a good quality currentsource is used.

Figure 20 shows the amplifier found in figure 18 includingtwo modified Howland current sources. The first source prebiases the servo amplifier, and the second source isconnected to U2’s inverting input which matches the inputpre bias.

Fig. 19 - Pre Biased Photovoltaic Isolation Amplifier Transfer Characteristics

IP1

Vin- +

IP1Q

1R1

17768

OP-177

-

+

0.1 µF

3

2

6 2N3906

VCC100 Ω

10 kΩ

OP-177

-

62

3 Output

Input

R1 R2

3

5

6

7

8IL300

2

4

1

K1K2

IP1

0.1 µF

+100 µA

100 µA currentsource

GAIN = K3R2R1

FS = ± 1 V

17770

100 µA

10 kΩ

IP2

100 µA

Vin

+0

a

IP1+0

b

IP2

Vout

+0

d

IP2

+0

c

IF-

+

-

1R1 1

K1

R2

K2

17769

IFIP1

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Fig. 20 - Pre Biased Photovoltaic Isolation Amplifier

Fig. 21 - Differential Pre Biased Photovoltaic Isolation Amplifier

1.2 V

1.2 V

OP-07

+

100 pF

3

2

6 2N3906

VCC100 Ω

10 kΩ

OP-07

62

3

Output

OP-07

+6

LM313

3

2

0.01 µF

100 µA

100 µA currentsource

100 µA

OP-07

+6

LM313

3

2

0.01 µF

100 µA100 µA currentsource

VCC-

Input

2N4340

2N4340

100 pF

R1 R2

FS = ± 1 V

R2R1

K3GAIN =

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

+

17771

VCC-

12 kΩ

12 kΩ

10 kΩ

1.2 V

Output

OP-07

+3

2

6

LM313

0.01µF

100 µA

100 µA currentsource

OP-07

+

2

3 6

VCC-

2N4340

OP-07

+3

2 100 pF

6 2N3906

VCC10 kΩ

OP-076

–2

312 kΩ

100µA

Input +

100 pF

R1 R2

OP-07

+

2

3

100 pF

6

100 Ω

12 kΩ

2N3906

Input -R4

OP-07

+

2

3 6

OP-07 6

–2

3

100 pF

R3

3

5

6

7

8IL300

2

4

1

K1K2

3

5

6

7

8IL300

2

4

1

K1K2

IP1+

+100 µA

17772

10 kΩ

10 kΩ

10 kΩ

10 kΩ

VCC

IP2

IP1 IP2

10 kΩ

10 kΩ

10 kΩ10 kΩ

10 kΩ10 kΩ

100 Ω

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Rev. 1.6, 20-Mar-12 11 Document Number: 83708

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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The previous circuit offers a DC/AC coupled bipolar isolationamplifier. The output will be zero volts for an input of zerovolts. This circuit exhibits exceptional stability and linearity.This circuit has demonstrated compatibility with 12 bit A/Dconverter systems. The circuit’s common mode rejection isdetermined by CMR of the IL300. When higher commonmode rejection is desired one can consider the differentialamplifier shown in figure 21.

This amplifier is more complex than the circuit shown infigure 20. The complexity adds a number of advantages.First the CMR of this isolation amplifier is the product of theIL300 and that of the summing differential amplifier found inthe output section. Note also that the need for an offsettingbias source at the output is no longer needed. This is due todifferential configuration of the two IL300 couplers. Thisamplifier is also compatible with instrumentation amplifierdesigns. It offers a bandwidth of 50 kHz, and an extremelygood CMR of 140 dB at 10 kHz.

PHOTOCONDUCTIVE ISOLATION AMPLIFIER The photoconductive isolation amplifier operates thephotodiodes with a reverse bias. The operation of the inputnetwork is covered in the discussion of K3 and as such willnot be repeated here. The photoconductive isolationamplifier is recommended when maximum signal bandwidthis desired. Bipolar photoconductive isolation amplifier.

UNIPOLAR ISOLATION AMPLIFIERThe circuit shown in figure 22 is a unipolar photoconductiveamplifier and responds to positive input signals. Thegain of this amplifier follows the familiar form of

. R1 sets the input signalrange in conjunction with the servo gain and the maximumoutput current, Io, which U1 can source. Given this,

. R1 can be determined from equation 28.

(28)

The output section of the amplifier is a voltage follower. Theoutput voltage is equal to the voltage created by the outputphotocurrent times the photodiode load resistor, R2. Thisresistor is used to set the composite gain of the amplifier asshown in equation 29.

(29)

This amplifier is conditionally stable for given values of R1.As R1 is increased beyond 10 kΩ, it may become necessaryto frequency compensate U1. This is done by placing asmall capacitor from U1’s output to its inverting input. Thiscircuit uses a 741 op amp and will easily provide 100 kHz orgreater bandwidth.

Fig. 22 - Unipolar Photoconductive Isolation Amplifier

Fig. 23 - Bipolar Photoconductive Isolation Amplifier

Vout Vin⁄ G K3 R2 R1⁄( )⋅= =

I0max IFmax=R1 Vinmax K1 I0max⋅( )⁄=

R2 R1 G⋅( ) K3⁄=

U26

+3

2

7

4

VCC

Vout

6

+3

2

7

4

R1

U1

Va

Vb

VinI F

+

R2

IP1

IP2

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

17773

VCC

VCC

VCC

VCC

U1741

6

+

R3

R1

3

2

7

4

R2

100 Ω

Vin

20 pF

-Vref1

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

R4

+ Vref2

U2741

6

-

+3

2

7

4

Vout

17774

- VCC

VCC

VCC

- VCC

VCC

VCC

- VCC

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Designing Linear Amplifiers Using the IL300 Optocoupler

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Rev. 1.6, 20-Mar-12 12 Document Number: 83708

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BIPOLAR ISOLATION AMPLIFIERMany applications require the isolation amplifier to respondto bipolar signals. The generic inverting isolation amplifiershown in figure 23 will satisfy this requirement. Bipolarsignal operation is realized by pre biasing the servo loop.The pre bias signal, Vref1, is applied to the inverting inputthrough R3. U1 forces sufficient LED current to generate avoltage across R3 which satisfies U1’s differential inputrequirements. The output amplifier, U2, is biased as a transresistance amplifier. The bias or offset, Vref2, is provided tocompensate for bias introduced in the servo amplifier.Much like the unipolar amplifier, selecting R3 is the first stepin the design. The specific resistor value is set by the inputvoltage range, reference voltage, and the maximum outputcurrent, Io, of the op amp. This resistor value also affects thebandwidth and stability of the servo amplifier. The input network of R1 and R2 form a voltage divider. U2is configured as a inverting amplifier. This bipolarphotoconductive isolation amplifier has a transfer gain givenin equation 30.

(30)

Equation 31 shows the relationship of the Vref1 to Vref2.

(31)

Another bipolar photoconductive isolation amplifier isshown in figure 24. It is designed to accept an input signalof ± 1 V and uses inexpensive signal diodes as referencesources. The input signal is attenuated by 50 % by a voltagedivider formed with R1 and R2. The solution for R3 is givenin equation 32.

(32)

For this design R3 equals 30 kΩ. The output trans resistance

is selected to satisfy the gain requirement of the compositeisolation amplifier. With K3 = 1, and a goal of unity transfergain, the value of R4 is determined by equation 33.

(33)

R4 = 60 kΩFrom equation 31, Vref2 is shown to be twice Vref1. Vref2 iseasily generated by using two 1N914 diodes in series.This amplifier is simple and relatively stable. When betteroutput voltage temperature stability is desired, consider theisolation amplifier configuration shown in figure 25. Thisamplifier is very similar in circuit configuration except thatthe bias is provided by a high quality LM313 band gapreference source.

This circuit forms a unity gain non-invertingphotoconductive isolation amplifier. Along with theLM113 references and low offset OP-07 amplifiers thecircuit replaces the 741 op amps. A 2N2222 buffer transistoris used to increase the OP-07’s LED drive capability. Thegain stability is set by K3, and the output offset is set by thestability of OP-07s and the reference sources.

Figure 26 shows a novel circuit that minimizes much of theoffset drift introduced by using two separate referencesources. This is accomplished by using an optically coupledtracking reference technique. The amplifier consists of twooptically coupled signal paths. One IL300 couples the inputto the output. The second IL300 couples a reference voltagegenerated on the output side to the input servo amplifier.This isolation amplifier uses dual op amps to minimize partscount. Figure 26 shows the output reference being suppliedby a voltage divider connected to VCC. The offset drift canbe reduced by using a band gap reference source to replacethe voltage divider.

Fig. 24 - Bipolar Photoconductive Isolation Amplifier

Vout

Vin----------- K3 R4 R2⋅ ⋅

R3 R1 R2+( )⋅---------------------------------------=

Vref2 Vref1 R4⋅( ) R3⁄=

R3 0.5 Vinmax Vref1+( ) IF K1⋅( )⁄=

R4 R3 G R1 R2+( )⋅ ⋅[ ] K3 R2⋅( )⁄=

U1 6

-

+

Vin

20 pF

22 µF

30 kΩ

3

2

7

46

-

+3

2

7

4

74130 kΩ

14.3 kΩ

22 µF

741

+

100 Ω

Vout

1N914

+13.7 kΩ

20 pF1N914

+

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

R3

++ U2

17775

30 kΩ

60 kΩ

VCC

VCC

VCC

VCC

- VCC

VCC

- VCC

- VCC

- VCC

Page 77: Bundle (1)

Designing Linear Amplifiers Using the IL300 Optocoupler

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Fig. 25 - High Stability Bipolar Photoconductive Isolation Amplifier

Fig. 26 - Bipolar Photoconductive Isolation Amplifier with Tracking Reference

10 kΩ

6 2N2222

-

+Vin

20pF

47 µF0.1 µF

2 kΩ

1 kΩ

18 kΩ

3

2

7

4

6-

+3

2 7

4

OP071.5 kΩ

1 kΩ

6.8 kΩ 10 kΩ

2 kΩ

LM313

LM313

2 kΩ

6.8 kΩ

10 µF

18 kΩ

OP07

20 kΩ

Gain

Offset

1 kΩ

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

R3

17776

- VCC

- VCC

- VCC

VCC

VCC

VCC

VCC

VCC

VCC

6

10 kΩ

3

2

7

4

10 kΩ

470 Ω

Vin20 pF

6

-

+

3

2

7

4

5 kΩ

+Vref2

+ Vref1

6

-

+

2

3

73.2 kΩ7

46

-

+

4.7 kΩ

3

27

4

1 kΩ

470 Ω5 kΩ

VCC

900 kΩ

90 kΩ

0.1 V

1 V

100 V

10 V

9 MΩ

7.5 kΩ

10 kΩ

Gain adjust

± 0 to 100 mVOutput

Tracking Reference

Zero

adjust

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

3

5

6

7

8 IL300

2

4

1

K1K2

IP1IP2

OP77

OP77

OP77

OP77

- VCC 220 pF

+ VCC

+

-

17777

VCC

- VCC

- VCC

- VCC

- VCC

+ VCC

+ VCC

+ VCC

+ VCC

+ VCC

+ VCC

Page 78: Bundle (1)

Designing Linear Amplifiers Using the IL300 Optocoupler

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Rev. 1.6, 20-Mar-12 14 Document Number: 83708

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One of the principal reasons to use an isolation amplifier isto reject electrical noise. The circuits presented thus far areof a single ended design. The common mode rejection,CMRR, of these circuits is set by the CMRR of the couplerand the bandwidth of the output amplifier. The typicalcommon mode rejection for the IL300 is shown in figure 27.

Fig. 27 - Common mode rejection

The CMRR of the isolation amplifier can be greatlyenhanced by using the CMRR of the output stage to itsfullest extent. This is accomplished by using a differentialamplifier at the output that combines optically coupled

differential signals. The circuit shown in figure 28 illustratesthe circuit.

Op amps U1 and U5 form a differential input network. U4creates a 100 μA, IS, current sink which is shared by each ofthe servo amplifiers. This bias current is divided evenlybetween these two servo amplifiers when the input voltageis equal to zero. This division of current creates a differentialsignal at the output photodiodes of U2 and U6. The transfergain, Vout/ Vin, for this amplifier is given in equation 34.

(34)

The offset independent of the operational amplifiers is givenin equation 35.

(35)

Equation 35 shows that the resistors, when selected toproduce equal differential gain, will minimize the offsetvoltage, Voffset. Figure 29 illustrates the voltage transfercharacteristics of the prototype amplifier. The data indicatesthe offset at the output is - 500 μV when using 1 kΩ 1 %resistors.

Fig. 28 - Differential Photoconductive Isolation Amplifier

10 100 1000 10000 100000 1000000- 130

- 120

- 110

- 100

- 90

- 80

- 70

- 60

F - F

CM

RR

- R

ejec

tion

Rat

io (

dB)

TA = 25 °C

17778

Vout

Vin----------- R4 R2 K3 U5( )⋅ ⋅ R3 R1 K3 U2( )⋅ ⋅+

2 R1 R2⋅ ⋅--------------------------------------------------------------------------------------------------=

VoffsetIs R1 R3 K3 U2( )⋅ ⋅ R2 R4 K3 U5( )⋅ ⋅–[ ]⋅

R1 R2+----------------------------------------------------------------------------------------------------------------=

U1

U5

U4 U3

–OP-07OP-07

+

+

–6.8 kΩ

LM313

3

Noninverting

Inverting

Common

6

7 VCC

4 -

2

3

1.2 V

12 kΩ

OP-07

+2.2 kΩ

470 Ω100 pF

3

24 - VCC

7 VCC

6

2N3904

OP-07

+2.2 kΩ

470 Ω100 pF

3

2

4 - VCC

7 VCC

6

2N3904

4 - VCC

62N3904

2

1 kΩ 1 %

2 kΩ

2 kΩ

Gain

Zero adjust

Output

0.01 µF

10 kΩ

10 kΩ

1 kΩ

100 µA current sink

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

U2

U6

17779

VCCVCC

VCC

VCCVCC

- VCC

7 VCC

1 kΩ 1 %

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Fig. 29 - Differential Photoconductive Isolation Amplifier Transfer Characteristics

Fig. 30 - Transistor Unipolar Photoconductive Isolation Amplifier Transfer Characteristics

DISCRETE ISOLATION AMPLIFIERA unipolar photoconductive isolation amplifier can beconstructed using two discrete transistors. Figure 32 showssuch a circuit. The servo node, Va, sums the current fromthe photodiode and the input signal source. This controlloop keeps Va constant. This amplifier was designed as afeedback control element for a DC power supply. The DCand AC transfer characteristics of this amplifier are shown infigures 30 and 31.

Fig. 31 - Transistor Unipolar Photoconductive Isolation Amplifier Frequency and Phase Response

CONCLUSION The analog design engineer now has a new circuit elementthat will make the design of isolation amplifiers easier. Thepreceding circuits and analysis illustrate the variety ofisolation amplifiers that can be designed. As a guide, whenhighest stability of gain and offset is needed, consider thephotovoltaic amplifier. Widest bandwidth is achieved withthe photoconductive amplifier. Lastly, the overallperformance of the isolation amplifier is greatly influencedby the operational amplifier selected. Noise and drift aredirectly dependent on the servo amplifier. The IL300 alsocan be used in the digital environment. The pulse responseof the IL300 is constant over time and temperature. In digitaldesigns where LED degradation and pulse distortion cancause system failure, the IL300 will eliminate this failuremode.

- 0.15 - 0.10 - 0.05 - 0.00 0.05 0.10 0.15- 0.6- 0.5- 0.4- 0.3- 0.2- 0.10.0

0.10.20.30.40.5

0.6

Vin - Input Voltage (V)

Vou

t - O

utpu

t Vol

tage

(V

)

Vout = - 0.4657 mV - 5.0017 x Vin

TA = 25 °C

17780

4.4 4.6 4.8 5.0 5.2 5.4 5.6

38

40

42

44

46

Vin - Input Voltage (V)

I p2

- O

utpu

t Cur

rent

(µA

)

Ip2 = 74.216 µA - 6.472 (µA/V) x Vin

TA = 25 °C

17810

102 103 104 105 106- 15

- 10

- 5

0

5

- 135

- 90

- 45

0

45

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

Ø -

Pha

se R

espo

nce

(°C

)to amplifier gain of - 1; 0 ° = 180 °Phase response reference

dB

17781

PHASE

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Fig. 32 - Unipolar Photoconductive Isolation Amplifier with Discrete Transistors

SUPPLEMENTAL INFORMATION

PHOTODETECTOR OPERATION TUTORIAL

PHOTODIODE OPERATION AND CHARACTERISTICSThe photodiodes in the IL300 are PIN (P-material - Intrinsicmaterial - N-material) diodes. These photodiodes convertthe LED’s incident optical flux into a photocurrent. Themagnitude of the photocurrent is linearly proportional to theincident flux. The photocurrent is the product of the diode’sresponsivity, Sl, (A/ W), the incident flux, Ee (W/mm2), andthe detector area AD (mm2). This relationship is shownbelow:

(1a)

PHOTODIODE I/V CHARACTERISTICSReviewing the photodiode’s current/voltage characteristicsaids in understanding the operation of the photodiode, whenconnected to an external load. The I-V characteristics areshown in figure 33. The graph shows that the photodiodewill generate photocurrent in either forward biased(photovoltaic), or reversed biased (photoconductive) mode.

In the forward biased mode the device functions as aphotovoltaic, voltage generator. If the device is connectedto a small resistance, corresponding to the vertical load line,the current output is linear with increases in incident flux. AsRL increases, operation becomes nonlinear until the opencircuit (load line horizontal) condition is obtained. At thispoint the open circuit voltage is proportional to the logarithmof the incident flux.

In the reverse-biased (photoconductive) mode, thephotodiode generates a current that is linearly proportionalto the incident flux. Figure 33 illustrates this point with theequally spaced current lines resulting from linear increase ofEe.

The photocurrent is converted to a voltage by the loadresistor RL. Figure 33 also shows that when the incident fluxis zero (E = 0), a small leakage current, or dark current (ID)will flow.

Fig. 33 - Photodiode I/V Characteristics

PHOTOVOLTAIC OPERATIONPhotodiodes, operated in the photovoltaic mode, generatea load voltage determined by the load resistor, RL, and thephotocurrent, IP. The equivalent circuit for the photovoltaicoperation is shown in figure 34. The photodiode includes acurrent source (IP), a shunt diode (D), a shunt resistor (RP), aseries resistor (RS), and a parallel capacitor (CP). Theintrinsic region of the PIN diode offers a high shuntresistance resulting in a low dark current, and reverseleakage current.

Fig. 34 - Equivalent Circuit - Photovoltaic Mode

MPSA10

MPSA10

1.1 kΩ

6.2 kΩ

200 Ω15 kΩ 10 kΩ

100 kΩ

5 V VCC

GND2

Vi n

GND1

+ 5 V

5 V

Vout

Va

IL300

3

5

6

7

8

2

4

1

K1K2

IP1 IP2

17782

VCC

IP SI Ee AD⋅ ⋅=Reverse biasForward bias

RL (small)

Photovoltaicload line

RL (large)

Photoconductiveload line

Ee-5

Ee-4

Ee-3

Ee-2

Ee-2

Ee-1Id

Vd/RL

17783

D

RSRP

CP

IL

IP +

-Cathode

Anode

VORL

IF

17784

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The output voltage, Vo, can be determined through nodalanalysis. The circuit contains two nodes. The first node, VF,includes the photocurrent generator, IP, the shunt diode, D,shunt resistor (RP), and parallel capacitance, CP. Thesecond node, VO, includes: the series resistor, RS, and theload resistor, RL. The diode, D, in the VF node is responsiblefor the circuit’s nonlinearity. The diode’s current voltagerelationship is given in equation 2a.

(2a)

This graphical solution of 2a for the IL300 is shown infigure 35.

Fig. 35 - Photodiode Forward Voltage vs. Forward Current

Inserting the diode equation 2a into the two nodal equationsgives the following DC solution for the photovoltaicoperation (equation 3a):

(3a)

Typical IL300 values:

IS = 13.94 ·10-12

RS = 50 ΩRP = 15 GΩK = 0.0288

By inspection, as RL approaches zero ohms the diodevoltage, VF, also drops. This indicates a small diode current.All of the photocurrent will flow through the diode seriesresistor and the external load resistor. Equation 3a wassolved with a computer program designed to deal withnonlinear transcendental equations. Figure 36 illustrates thesolution.

Fig. 36 - Photovoltaic Output vs. Load Resistance and Photocurrent

This curve shows a series of load lines, and the outputvoltage, Vo, caused by the photocurrent. Optimum linearityis obtained when the load is zero ohms. Reasonable linearityis obtained with load resistors up to 1000 Ω. For loadresistances greater than 1000 Ω, the output voltage willrespond logarithmically to the photocurrent. This responseis due to the nonlinear characteristics of the intrinsic diode,D. Photovoltaic operation with a zero ohm load resistoroffers the best linearity and the lowest dark current, ID. Thisoperating mode also results in the lowest circuit noise. Azero load resistance can be created by connecting thephotodiode between the inverting and non-inverting input ofa trans resistance operational amplifier, as shown in figure37.

Fig. 37 - Photovoltaic Amplifier Configuration

PHOTOCONDUCTIVE OPERATION MODEIsolation amplifier circuit architectures often load thephotodiode with resistance greater than 0 Ω. With non-zeroloads, the best linearity is obtained by using the photodiodein the photoconductive or reverse bias mode. Figure 38shows the photodiode operating in the photoconductivemode. The output voltage, Vo, is the product of thephotocurrent times the load resistor.

The reverse bias voltage causes a small leakage or darkcurrent, ID, to flow through the diode. The outputphotocurrent and the dark current, sum the load resistor.

IF IS EXP VF K⁄( ) 1–[ ]⋅=

0.60.50.40.30.20.10.010-10

10-9

10-8

10-7

10-6

10-5

10-4

Vf - Forward Voltage (V)

I F -

For

war

d C

urre

nt (

A)

17785

0 IP IS EXP VO RS RL+( ) K RL⋅⁄[ ] 1–{ }VO RS RL RP+ +( ) RP RL⋅( )⁄[ ]–

⋅–=

0 50 100 150 2000.00

0.10

0.20

0.30

0.40

0.50

1003005007001 K3 K5 K7 K10 K20 K30 K50 K

Ip - Photocurrent (µA)

Vo

- O

utpu

t Vol

tage

(V

)

17786

Ip

+ Vout

IF

Vout = RIp

U

-

R

3

5

6

7

8IL300

2

4

1

K1K2

IP1 IP2

17787

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This is shown in equation 4a.

(4a).

Fig. 38 - Photoconductive Photodiode Model

The dark current depends on the diode construction,reverse bias voltage and junction temperature. The darkcurrent can double every 10 °C. The IL300 uses matchedPIN photodiodes that offer extremely small dark currents,typically a few picoamps. The dark current will usually trackone another, and their effect will cancel each other when aservo amplifier architecture is used. The typical dark currentas a function of temperature and reverse voltage is shown infigure 39.

The responsivity, S, of the photodiode is influenced by thepotential of the reverse bias voltage. Figure 40 shows theresponsivity percentage change versus bias voltage. Thisgraph is normalized to the performance at a reverse bias of15 V. The responsivity is reduced by 4 % when the bias isreduced to 5 V.

Fig. 39 - Dark Current vs. Reverse Bias

Fig. 40 - Photoconductive Responsivity vs. Bias Voltage

The photodiode operated in the photoconductive mode iseasily connected to an operational amplifier. Figure 41shows the diode connected to a trans resistance amplifier.The transfer function of this circuit is given in equation 5a.

(5a)

BANDWIDTH CONSIDERATIONSPIN photodiodes can respond very quickly to changes inincident flux. The IL300 detectors respond in tens ofnanoseconds. The slew rate of the output current is relatedto the diodes junction capacitance, Cj, and the load resistor,R. The product of these two elements set thephoto-response time constant.

(6a)

This time constant can be minimized by reducing the loadresistor, R, or the photodiode capacitance. This capacitanceis reduced by depleting the photodiode’s intrinsic region, I,by applying a reverse bias. Figure 42 illustrates the effect ofphotodiode reverse bias on junction capacitance.

Fig. 41 - Photoconductive Amplifier

VL RL IP ID+( )⋅=

D

IP

RS

RP CP

ID

IL

+

Cathode

AnodeVO

RL

VD

IF

17788

0 5 10 15 20 25 30 3510-2

10-1

110

101

102

Vr - Reverse Bias (V)

I d -

Dar

k C

urre

nt (

nA)

Ta

70 °C

50 °C

25 °C

17789

0 5 10 15 20- 8

- 7

- 6

- 5

- 4

- 3

- 2

- 1

0

1

2

Vr - Reverse Voltage (V)

Per

cent

Diff

eren

ce (

%)

17790

Vout R IP Id⋅( )⋅=

τ R Cj⋅=

VccIF

IP2

3

5

6

7

8IL300

2

4

1

K1K2

U26

-

+3

2

7

4

Vout

R

17791

IP2IP1

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Fig. 42 - Photodiode Junction Capacitance vs. Reverse Voltage

The zero biased photovoltaic amplifier offers a 50 kHz to60 kHz usable bandwidth. When the detector is reversebiased to - 15 V, the typical isolation amplifier responseincreases to 100 kHz to 150 kHz. The phase and frequencyresponse for the IL300 is presented in figure 43. Whenmaximum system bandwidth is desired, the reverse biasedphotoconductive amplifier configuration should beconsidered.

Fig. 43 - Phase and Frequency Response

0 5 10 15 20 25 300

5

10

15

20

Vr - Reverse Bias (V)

CJ

- Ju

nctio

n C

apac

itanc

e (p

F)

17792

103 104 105 106 107- 20

- 15

- 10

- 5

0

5

- 180

- 135

- 90

- 45

0

45

dB

F - Frequency (Hz)

Am

plitu

de R

espo

nse

(dB

)

Ø -

Pha

se R

espo

nse

(°C

)

17793

IFq = 10 mA, MOD = 4 mATA = 25 °C, RI = 50 W

PHASE

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V I S H A Y S E M I C O N D U C T O R S

Optocouplers and Solid-State Relays Application Note 53

Optocouplers Isolate Modem Data Access Arrangement

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Rev. 1.5, 11-Oct-11 1 Document Number: 83709

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Laptop, palmtop, and pen-based computer modemmanufacturers are seeking ways to accommodate thesmall form factor of the PCMCIA peripheral cards. Theyare looking for devices to replace the bulky magneticand electromechanical components normally found inthe modem’s telco line interconnection. Modemsuppliers have found that optocouplers satisfy both thespace and performance needs of a PCMCIA formatfax/modem product.

This application note describes various DAA circuitarchitectures*. It shows how the IL350 linear optocoupler, isused to isolate the modem signal, provide ring detection,and Off/Hook operation. The IL350 offers the PCMCIAmodem designer a small package with wide signalbandwidth and high insulation and isolation.

DATA ACCESS ARRANGEMENT - DAAFigure 1 shows the block diagram of the data-accessarrangement (DAA) direct connect modem. The lineinterconnect section consists of the Off/Hook relay, ringdetector, signal isolation, line current sink, and surgeprotection. An optically coupled FET switch, such as theLH1056, is commonly used for Off/Hook switching. Ringersignal sensing is done by phototransistor optocouplers suchas 4N35 or ILD255.

Fig. 1 - DAA-Direct Connect Modem

Modem

Billing-delaycontrol

CPUDTE

Dialer

Off- hook enable

PulseTone

Telcoconnect

Isolation line

2 to 4 wireconversion Signal isolation

surge protectionline current sink

Off-hookdelaycontrol

Callprogressdetector

Ringdetector

Off-hookrelay

*The circuits shown are believed to befunctional, but compliance to telco,FCC or other government specicationsis not guaranteed. The following circuitswere developed independently byVishay OED applications. The intercon-nection of these circuits may infringe onexisting patents.

17794

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OPTICAL 2 TO 4 WIRE HYPRIDReplacing the 600 Ω transformer is the most obviousapplication of the IL350. When a single baud rate modem isbeing designed, the IL350 can provide line isolation and alsocan function as the 2 to 4 wire hybrid.

Fig. 2 - 2 to 4 Wire Electronic Hybrid

A typical transformer coupled 2 to 4 wire electronic hybrid isshown in figure 2. This circuit provides transmitted tonecancellation, while supplying a - 3 dBm transmit level, andreceiver sensitivity for a - 42 dBm signal. It offers a 600 Ωtermination impedance to the telco transformer in bothtransmit and receive function. The hybrid function isprovided by U2. When a telco signal is being received thetransformer sees a 600 Ω load, R3, terminated to virtualground. U2 amplifies the receive signal across R3 with again specified by the values of R1 and R4. The modem’stransmit signal is canceled by U2’s differential amplifier

action. The amplifier inverting gain is set so that thefeedback signal is equal and 180° out of phase to thetransmit signal level arriving at U2’s non-inverting input. R1is selected to set U2’s gain. The magnitude of transmit tonecancellation is described in the following equation. Optimumtone cancellation is achieved when R3 = R2 and R1 = R4.

Transmit suppresion

Figure 3 is a block diagram of an optical transformerconnected between the output U1 and the non-invertinginput U2. By introducing two unity gain isolation amplifiersin this path, it is possible to isolate the 600 Ω line terminationresistor while preserving the hybrid’s tone cancellationfeature. Figure 4 is a detail of figure 3.

Fig. 3 - DDA/2

Fig. 4 - 2 to 4 Wire Hybrid Optically Isolated Transformer

22.0 K

50.0 K 22.0 K22.0 K

REC

XMT

0.1 µF600 Ω

17795

dB( ) 20Log Abs R1 R4+R1

---------------------- R3R1 R3+---------------------- R4

R1 R4+---------------------- –

=

Ringdetector

Tip

Ring

On/Off hook

On/Off hookLH1540

LH1540

Bridgerectifier

Opticaltransformer

2 to 4Whybrid

IL300s

IL252SFH6286SFH628

Rec

XMIT

Control

Currentaink

17796

50.0 K

0.1 µF 22.0 K

600 Ω

22.0 K 22.0 K

+1 +1

REC

XMT

0.1 µF

LH1540

0.1 µ F/400 V

330

Darlington

47 0

0.1 µF

12 K

82 K

1N4007 - 4 ea

Tip

Ring

On/Off hook

DC loop current drainpermitting use of a DRY “transformer”interface

Ω

Ω

17797

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Application of the optical transformer results in a “DryTransformer” type line termination. A dry transformerrequires a separate central office battery current return path,which is usually a current sink constructed with discretecomponents. This example shows a Darlington transistorcurrent sink providing this path.

Various optical transformer 2 to 4 hybrid circuits wereinvestigated. One circuit used single-supply Thevenin styledifferential operational amplifiers in the isolated section ofthe interface. The results were less than acceptable. Thesecircuits had difficulty driving reactive low-impedance(600 Ω) loads.

Figure 5 shows a better performing design that uses Nortonor current input operation amplifiers (LM3900) in the isolatedtelco line and standard Thevenin Dual supply operationalamplifiers (LM324) within the subscriber unit. The LM3900,U6, easily drives the IL350's LED, and a non-inverting

photodiode amplifier requires a minimum of components,U5. Note that U3, LM324, requires a buffer transistor(2N3906) to adequately drive the LED. U4 is used as a transresistance amplifier, converting the receive IL350'sphotocurrent into a voltage that is compatible with thecancellation requirements of U2. The R3, R4, C1 forms thelag compensation network to compensate for the delay inthe isolated path between U1’s output and U2’s input.

A lower component count circuit is shown in figure 5. Thisinterface uses Norton amplifiers exclusively for both thetelco line and subscriber instrument sections. The transmitand receive sections are identical to those in figure 4. Thetransmit suppression is accomplished in the currentdifferential amplifier, U2. R4, R5, C2 form the lag network tocompensate for the delay introduced by U3, U4, U5, U6, andU7. 2 to 4 wire optically coupled hybrid Norton amplifierconfiguration

Fig. 5 - 2 to 4 Wire Optically Coupled Hybrid Norton/Thevenin Amplifier

100K

9

13

Receive+10

8

12

14

Transmit

LM324

LM324

LM324

2

9

8

100Ω

3

604

133

5

6

7

8IL300

2

4

1

K1K2

IP1I P2

+

+

+

LM324

LM3900

LM3900

604

Ω

604Ω

Telephoneline

U6

Vcc2

Vcc1

Vcc1

U2

U5

U1

6

57

Gnd2

Vcc2

Ring

Tip

Gnd1

Gnd1

2N3906

Gnd1

Gnd1

Gnd1

Gnd1

Gnd2

U7

Isolated telephone line

Subcriber instrument

2

3

4

R3

R2

C1R1

R7

R8

C5

C4

R10

R9

C2

R4

R5

R6

R14

C7

C3

R13

R11

C6

R12

3

IL300

2

4

1

K1K2

IP1 IP25

6

7

8U4

+

+

Gnd1

100Ω

R8

17798

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Fig. 6 - 2 to 4 Wire Optically Coupled Hybrid Norton Amplifier Configuration

Fig. 7 Fig. 8

-

100K

11

6 -Receive

+12

10

5

1

Transmit

LM3900

LM3900

8

100Ω

9

8-

100Ω

13

-

604

133

5

6

7

8IL300

2

4

1

K1K2

IP1I P2

+

+

-LM3900

LM3900

LM3900

604Ω

604Ω

Telephoneline

U6

Vcc2Vcc1

U2

U5

U3

U1

Gnd2

Vcc1Vcc2

Ring

Tip

Gnd1

Gnd1

Gnd1

Gnd2

U7

Isolated telephone line

Subcriber instrument

2

3

4

R4

R3

R2

C1R1

R7

R8

C4

C3

R9

C2

R5

R6

R13

C6R12

R10

C5

R11

3

IL300

2

4

1

K1K2

IP1 IP2 5

6

7

8U4

+

+

17799

Tip

Ring

Ringdetector

4N35

Line switch

Bridgerectifier

LH1540 IL350

IL350

Receiver

XMT

RCVD

Control

Line switchLH1540

IL217IL252

Transmitterand linecurrent sink

17800

Tip

RingIL350

Receiverand

ringdetector XMT

RCVD

Control

Line switchLH1540

Transmitterand linecurrent

sinkLine SwitchLH1540

Bridgerectifier

IL350

17804

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Fig. 9

A 1 kHz transmit signal suppression of - 36 dB wasmeasured on the bench. Both of these optical hybrids derivetheir power from the telco line through a voltage droppingnetwork connected after the off/hook switch. The circuitswere evaluated with 5 V to 9 V supply voltages.

NON HYBRID DAA ARCHITECTURESThe previous circuits may not be suitable for multiple baudrate applications. This results from the frequencydependency of the lag network found in the hybrid. Thissituation leads to a series of architectures that use digitaltransmit suppression techniques. When such techniquesare possible then standard IL350 interface circuits can beused.

Figure 7 shows a design with a phototransistor coupler asthe ring detector and one or more LH1540 or LH1546switches for Off/hook control.

This design can be simplified by having ring detectionperformed by the IL350 receiver, using one LH1540 orLH1546 off/hook switch and combining the transmitter andline current into one circuit function. The block diagram forthis approach is shown in figure 8, the schematic in figure 9.The circuit operation is as follows. Line off/hook control isperformed by one LH1540 or LH1546 FET switch. Ringdetection is accomplished by the signal path of C1, R1 andthe LED of the IL350 coupler. These values are selected toprovide a 1 mA to 2 mA LED ringing current.

Once the ringing signal is detected the off/hook controlcloses the LH1056, and the IL350 receiver amplifier isenergized from power supplied by the central office batteryvia the bridge rectifier D1-D4. The zener diode ZD2 is usedto supply + 15 V. The IL350 servo amplifier is constructedwith Q3 and a shunt regulator, TL431. R7 is used to set a prebias current for the servo operation. The optical servocurrent can range from 50 μA to 100 μA depending on theK1 servo gain of the IL350. This photo bias current will resultin a LED current of 5 mA to 10 mA. C2 provides alow-impedance received signal path into the input of theTL431. The received signal is converted to an outputphotocurrent based upon the transfer gain, K3, of the IL350.This output photocurrent is then amplified by the transresistance amplifier, U2.

R4

R3

R5

Q1

Q2

100R8

R9

R6

D1 to D4

C2

TL43 1

100

ΩQ3

R7

IL30 0

IL30 0

Q4

GND 2

Vcc

GND2

GND2

GND1

GND1

XM T

RVD signal,ring detection

Tip

RING

C1 R1

LH1540line

switch

R2

U1

U2

Ω

17801

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Fig. 10 - Switchless DAA Interconnection

Fig. 11 - Switchless DAA Interconnection

The transmit function and central office battery current sinkis provided by the transmit amplifier. This circuit consists ofQ1, Q2, R2, R4, R5, and R6. Under transmit operation thetransmit signal XMT consists of a DC and AC component.The DC component pre biases the transmit amplifier. Thispre bias sets the supplemental line current to be sunk.Recall that the receiver amplifier will require a 5 mA to 10 mAoperating current, therefore the transmit current sink willhandle any additional current required by the central officeswitch. The central office line current is typically 20 mA to30 mA. The AC component of the transmit signal is set to alevel that satisfies the - 3 dBm line transmit level. This circuitwas designed to use the smallest and the fewest number ofcomponents as possible.

See figure 10 for a circuit design that further minimizesboard space by eliminating the off/hook optocouplers. Theschematic of this design is shown in figure 11.

The circuit operation for this design is as follows. Ringdetection is performed by a network consisting of C3, R5,Q2, and the LED of the IL350. This ringer offers a higherimpedance than previous designs. This was done to reducethe value and physical size of C3. During ringing, Q2functions as a ringer amplifier for the LED. Once the ringingsignal has been recognized by the modem, the receiveramplifier is activated by turning ON the SFH618optocoupler, U2. When U2 is Off, it disables a bias networkwhich also disables the micro-power opamp, U1. Under thiscondition this amplifier requires only a 20 μA supply current,equivalent to an Off/Hook resistance of 2.5 MΩ. When theU2 is ON, it provides a current return for the photo biascurrent supplied by R2 and R3. This bias network is selectedto set an LED quiescent current of 5 mA to 10 mA.

Tip

Ring

IL350

Receiver

XMT

RCVD

Control

andring

detector

Transmitterand linecurrentsink

Bridgerectifier

IL35017802

2N3906

100

+

-

62

3

3

5

6

7

8IL350

2

4

1

K1K2

IP1 IP2

+ 15 V

R6

C1

C3

SFH618

MOV

Tip

Ring

RVD signalRING DETloop voltage

56V

C4

U4

3 6

2

C2

OP-90-

+

4

7U1

1 mA

R5

R3

R1

R2

R4

R7

D1 to D4

ZD1

ZD2ZD3

3

5

6

7

8 IL350

2

4

1

K1K2

IP1IP2

3

6 2-

+4

7

U7

3

6 2-

+4

7

U5

Vcc100

XMTDynamic loopcurrent control

2N3906

27 V

D1, D2

MJE181

R8

R9

R10

R11

RVDcontrol

C6

C5

ALD1706Q1

Q2

Q3U6

U2

U3

Vcc

Ω

Ω

17803

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The received signal is supplied to U1 via C1 and R1. Thesevalues are selected to satisfy the bandwidth and signal tonoise requirement of the modem. The received signalgenerates a modulated LED current that is optically coupledthrough U3 to the modem receive trans resistance amplifierconsisting of U4, C4, and R4.

The transmit and central office battery current sink isprovided by the transmit amplifier. The transmit amplifierand current sink are connected across the telco line. Thetransmit signal consists of a DC and AC component. Whennot transmitting, the transmit signal will have a DC level thatforces the LED current of transmit IL350, U6, to zero. Underthis condition the output photocurrent, IP2, of U6 will also bezero, disabling the transmit amplifier U5 and Q1.

When disabled, the transmit amplifier requires a supplycurrent of less that 10 μA, giving the line an off/hookresistance of 5 MΩ.

When the modem is transmitting, the transmit signal, XMT,will have a DC component sufficient to force Q1 to sink anyadditional central office line current not required by theactivated receive amplifier. U5 and Q1 function as a currentto current amplifier. The trans conductance of the amplifieris set by R8, and R11. The transmit AC signal level at U7 isset to provide a - 3 dBm signal to the telco line. R9 providesthe output photodiode bias return path. The bandwidth ofthe transmit circuit is set by amplifier selection, with thevalues of R11, R8, and C6. Signal bandwidths in excess of20 kHz are possible with proper component selection.

CONCLUSIONThe circuit designs shown in this application note areprovided as a starting point for the design of PCMCIAcompatible modems. By using the special lead-formedIL350, SOT23, and SOT223 transistors, surface-mount ICsand passive components, a DAA interface that will fit the5 mm height form factor of the PCMCIA standard can beconstructed.

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Optocouplers and Solid-State Relays Application Note 02

Application Examples

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Rev. 1.4, 07-Nov-11 1 Document Number: 83741

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INTRODUCTIONOptocouplers are used to isolate signals for protection andsafety between a safe and a potentially hazardous orelectrically noisy environment. The interfacing of theoptocoupler between digital or analogue signals needs to bedesigned correctly for proper protection. The followingexamples help in this area by using DC- and AC-inputphototransistor optocouplers.

OPTOCOUPLERS IN IC LOGIC DESIGNTo interface with TTL logic circuits, Vishay offers a widerange of 4 pin and 6 pin optocoupler series such as theCNY17x, SFH61xA, TCET110x, or K817P family.

a) Supply voltage: VCC = 5 V

b) Operation temperature range: - 20 °C to + 60 °C

c) Service life of application: 10 years

Example 1:Phototransistor wired to an emitter resistor.

For simplicity, a typical CTR value of 100 % at IF = 10 mA isselected. Within the temperature range of - 20 °C to + 60 °Cthe CTR undergoes a change between + 12 % and - 17 %.The - 17 % reduction is critical to the functioning of thecircuit.

Assuming a 10-year service life period of the interfacecircuit, allowance needs to be made for additional CTRreduction of approximately 20 % on account of degradation.Making an additional tolerance allowance of approximately- 25 % for the CTR will result in a safe minimum value ofapproximately 50 %.

CTRmin. = 100 % x (0.83) x (0.80) x (0.75) = 49.8 %

For a defined low state at the output of the optocoupler thevoltage VL at RL must be VIL ≤ 0.8 V and currentIIL (IILmax. = 1.6 mA) must be capable of flowing through RLfrom the TTL input.

Owing to the phototransistor in this case being blocked atthe output of the optocoupler and ICEO maximum 200 nA(at approximately 60 °C), the IL - IIL setting can proceedpractically without any error.

This results in the following maximum value of RL:

A voltage VL at RL resistor of VIH ≥ 2 V is necessary in orderto attain a safe high state at the output. This needs to begenerated by the collector current IC of the phototransistor.In the case of the TTL output at the input of the optocoupler,the current should remain IOL ≤ 16 mA. The CTR value of50 % results in the maximum output current IC for theoptocoupler of 8 mA.

With IL = IC + IIH and IIH for standard TTL being maximum,40 μA, IL = IC can be assumed without any essential error.

This allows the minimum value to be determined for RL:

If, for example, RL = 390 Ω is selected and 20 % safety iscomputed to the minimum VIH in respect of the high state(VIH + VIH x 20 % = 2.4 V), this will then permit IC, IF, and thedropping resistor RV at the input of the optocoupler to bedetermined,

With VF = 1.2 V, (the forward voltage of the IR diode) and VOL≤ 0.4 V for the TTL output follows:

RL

IL

IIL IIH

VCC VCC

RV

IF IC

TTL

VL

15096

TTL

RLVIL

IIL--------< 0.8 V

1.6 mA------------------- 500 Ω= =

RLVIH

IL---------> 2 V

8 mA-------------- 250 Ω= =

IC IL2.4 V390 Ω----------------> 6.15 mA= =

- IF6.15 mA

CTR----------------------- 12.3 mA=> >

RV

VCC VF– VOL–12.3 mA

-----------------------------------------> 276 Ω RV 270 Ω=,=

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The TTL interface with the optocoupler is able to transmitsignals having a frequency of > 50 kHz or a transmission rateof ≥ 100 kbit/s.

In the same way, the optocoupler can interface with otherlogic circuits, such as LSTTL, HCMOS, or HCTMOScomponents. All that needs to be done is to work thecorresponding limit values VIH, VOH, IIL, IOL, etc, into thecomputation for the relevant family.

If use is made of LSTTL or HCTMOS components this willalso bring about an essential reduction in currentconsumption.

Example 2:Phototransistor wired to a collector resistor.

The CTR is determined by applying the same calculation- 50 % - as that given in example 1. In this example,dimensioning of the interface is launched from the high stateat the output of the optocoupler.

In the high state a non-operate current of the IIH - ofmaximum 40 μA - may flow in the TTL input. If RL selectionis too high, the entire non-operate current = ICEO + IIH mayproduce such a voltage drop through the RL that the criticalVIH voltage (minimum = 2 V) is not attained.

Or if another + 20 % safety is added to the VIH voltage,

For calculating the smallest usable RL value, ICmax = 8 mA isassumed as in example 1 and use is made of the low stateof the optocoupler output. In this circuit the current IIL of theTTL input flows through the phototransistor in such a waythat the following applies: IC = IL + IIL.

This results in the following:

To select the value for RL, the following should be observed.Proceeding from the voltage VIL = 0.8 V, the phototransistoris on the limits of saturation.

Owing to the voltage VCE being relatively unstable in thisstate, VCE should be selected in such a way that thephototransistor is in full saturation.

From the diagram VCEsat vs. IC in any given 4 pin or 6 pinphototransistor data sheet, CTR reduced by 50 % and forIC < 5 mA follows VCEsat < 0.5 V.

ICmax. is now reduced to approximately 4 mA and for theminimum RL follows,

If a suitable value is selected for the resistor RL, it is possibleto determine RV at the input.

Example for RL = 5.1 kΩ follows:

IC = IIL + IL = 2.68 mAand with CTR = 25 %, IF = IC/CTR = 10.72 mA:

This interface circuit can be used for transmission rates ofup to about 28 kbit/s The fact that considerably lowertransmission rates are possible here compared with thecircuit given in example 1 is partly due to the saturation stateof the phototransistor, and to a large extent, to the highervalue required for RL.

Example 3:Here are other circuit configurations to interface with TTLcircuit, specifically the 7400 family.

RL

IIL

VCC VCC

RV

IF IL

TTLVIL, VIH

15097

TTL

IIHIC

RLVCC VIH–ICEO IIH+--------------------------< 5 V 2 V–

40.2 µA------------------------ 74.6 kΩ= =

RLVCC VIH VIH 20 100⁄×+( )–

ICEO IIH+-------------------------------------------------------------------------------<

5 V 2.4 V–40.2 µA

------------------------------------- 64.7 kΩ= =

RLVCC VIL–ICmax IIL–---------------------------> 5 V 0.8 V–

6.4 mA----------------------------- 656 Ω= =

RLVCC VCEsat–

4 mA 1.6 mA–---------------------------------------> 5 V 0.5( ) V–

2.4 mA---------------------------------- 1875 Ω= =

ILVCC VCEsat–

RL------------------------------------ 5.5 mA V

5.1 kΩ------------------------- 1.08 mA= = =

RVVCC VF– VOL–

10.72 mA----------------------------------------- 317Ω RV 330 Ω=,= =

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Rev. 1.4, 07-Nov-11 3 Document Number: 83741

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TTL ACTIVE LEVEL LOW (7400)

It is more difficult to operate into TTL gates in the activelevel- high configuration. Some possible methods are asfollows:

Obviously, several optocoupler output transistors can beconnected to perform logical functions.

Note: Use smaller pull-up resistorfor higher speed

12 kΩ

Vcc

17454

Note: Best method if negativesupply is available

VCC

2 mAV

_

240 Ω

Note: Requires 10 mA fromtransistor and sacrificesnoise margin

10 kΩ

Note: High sensitivity but sacrificesnoise margin. Needs extra parts

17455

2 kΩ

VCC

VCC

10 kΩ

VCC

Note: Extra parts cost but, high sensitivity17456

10 kΩ

VCC

A+B

7400

Note: Logical OR connection

A

B

A·B

7400

A

B

17457 Note: Logical AND connection

VCC

12 kΩ

12 kΩ

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Rev. 1.4, 07-Nov-11 4 Document Number: 83741

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

INPUT DRIVING CIRCUITS

The input side of the optocoupler has an emittercharacteristic as shown.

The forward current must be controlled to provide thedesired operating condition.

The input can be conveniently driven by integrated circuitlogic elements in a number of different ways.

TTL ACTIVE LEVEL HIGH (7400 SERIES)

TTL ACTIVE LEVEL LOW (7400 SERIES)

There are obviously many other ways to drive the devicewith logic signals, but a majority can be met with the abovecircuits. All provide 10 mA into the LED, giving 2 mAminimum out of the phototransistor. The 1 V diode knee andits high capacitance (typically 100 pF) provides good noiseimmunity. The rise time and propagation delay can bereduced by biasing the diode onto perhaps 1 mA forwardcurrent, but the noise performance will be increased.

AC INPUT COMPATIBLE OPTOCOUPLER

INTRODUCTION

With the rapid penetration and diversification of electronicsystems, demand for optocouplers is strengthening. Mostpopular are products featuring compact design, low cost,and high added value. To meet the market needs, Vishay isexpanding the optocoupler. This application note focuseson optocouplers compatible with AC input, and coversconfiguration, principles of operation, and applicationexamples.

80

40

0

100

60

20

1

2

3

8 4 0 0.8 1.6VR(V) VF (V)

I R(t

nA)

I R(µ

A)

17458

68 Ω

Note: Can omit resistor for about15 mA into diode

VCC

17459

Note: More parts required than above

270 Ω510 Ω

Note: Not as good as above circuit.Not recommended

2 kΩ

VCC

Vcc

330 Ω

17460

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Application Examples

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Rev. 1.4, 07-Nov-11 5 Document Number: 83741

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CONFIGURATION(INTERNAL PIN CONNECTION DIAGRAM)

Fig. 1 - 4 Pin AC-Input Optocoupler

Fig. 2 - 4 Pin DC-Input Optocoupler

Figure 1 shows the internal pin connection of a 4 pinAC-input SFH620A-x optocoupler TCET1600, K814P series;and figure 2, of a 4 pin DC-input optocoupler TCET1100,SFH61xA-x, and K817P series. The main difference is thatthe AC-input optocouplers incorporate an input circuit withtwo emitters connected in reverse parallel. In the DC-inputoptocoupler one emitter is connected in the input circuit sothat the emitter emits light to provide a signal when a currentflows in one direction(1- > 2 in figure 1) (one-direction inputtype).

However, in the configuration shown in figure 2, when acurrent flows in direction 1 to 2, emitter 1 emits light to senda signal, and when it flows from 2 to 1, emitter 2 emits lightto send a signal (bi-directional input type). Namely, even ifthe voltage level between 1 and 2 varies, and the positiveand negative polarities are changed, either of two emittersemits light to send a signal. This means that theone-direction input optocoupler permits DC input only,while the bi-directional input type permits AC input as well.The next section describes the status of output signals whenVac power is directly input to an AC input compatibleoptocoupler via a current limit resistor.

Example 1: AC/DC converter

Fig. 3 - AC-Input-Compatible Optocoupler (Bi-Directional Input)

Fig. 4 - Conventional Optocoupler (One-Direction Input)(Full-Wave Rectification by Means of Diode Bridge)

Example 2: detection of a telephone bell signal

Fig. 5 - AC-Input-Compatible Optocoupler (Bi-Directional Input)

Fig. 6 - Conventional Optocoupler (One-Direction Input)(Rectified by CR Circuit)

1

4

A,K A,K

C E

12710

2

3

2

3

1

4

12590

15099

LineVoltage

VCC

0+

15100

LineVoltage

0+

–0+

VCC

0+

Ring Line

15101

0+

Ring Line

15102

0+

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Rev. 1.4, 07-Nov-11 6 Document Number: 83741

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Example 3: sequencer circuit input section

Fig. 7 - AC-Input-Compatible Optocoupler (Bi-Directioal Input) Fig. 8 - Conventional Optocoupler (One-Direction Input)(Full-Wave Rectified by Diode Bridge)

PROGRAMMABLE LOGIC CONTROLLER EXAMPLE

PURPOSE: IN-OUT INTERFACE

AC Line

15103

AC Line

Common

Common

15104

17912

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Document Number: 80054 For technical questions, contact: [email protected] www.vishay.comRev. 1.6, 24-Nov-08 121

Assembly Instructions

Assembly InstructionsVishay Semiconductors

GENERALVishay offers a wide product selection of optocouplers andsolid state relays in a variety of packages. This documentprovides instructions on mounting for the different types ofpackages, specifically on the different methods of soldering.For DIP packages, they can be mounted in DIP sockets ordirectly on a pre-designed PCB with holes.The preferred solder process for SMD packages is reflowsoldering. Certain SMD families are also qualified for wavesoldering; please see table 1. The moisture sensitivity Level(MSL) = 1 for all couplers.If the device is to be mounted near heat-generatingcomponents, consideration must be given to the resultantincrease in ambient temperature.

SOLDERING INSTRUCTIONSProtection against overheating is essential when a device isbeing soldered. Therefore, the connection wires or PCBtraces should be left as long as possible. The maximumpermissible soldering temperature is governed by themaximum permissible heat that may be applied to thepackage.The maximum soldering iron (or solder bath) temperaturesare given in the individual datasheets. During soldering, noforces must be transmitted from the pins to the case (e.g., byspreading the pins).

SOLDERING METHODSThere are several methods for soldering devices onto thesubstrate. The following is a partial list.

(a) Soldering in the vapor phase

Soldering in saturated vapor is also known as condensationsoldering. This soldering process is used as a batch system(dual vapor system) or as a continuous single vapor system.Both systems may also include a pre-heating of theassemblies to prevent high-temperature shock and otherundesired effects.

(b) Reflow soldering of lead (Pb)-free SMD devices

By using infrared (IR) reflow soldering, the heating iscontact-free and the energy for heating the assembly isderived from direct infrared radiation and from convection.The heating rate in an IR furnace depends on the absorptioncoefficients of the material surfaces and on the ratio of thecomponent's mass to an as-irradiated surface.The temperature of parts in an IR furnace, with a mixture ofradiation and convection, cannot be determined in advance.Temperature measurement may be performed by measuringthe temperature of a certain component while it is beingtransported through the reflow oven.

Influencing parameters on the internal temperature of thecomponent are as follows:

• Time and power

• Mass of the component

• Size of the component

• Size of the printed circuit board

• Absorption coefficient of the surfaces

• Packing density

• Wavelength spectrum of the radiation source

• Ratio of radiated and convected energy

Temperature/time profiles of the entire process and theinfluencing parameters are given. The IR reflow profile isshown in figure 1. Two cycles of reflow are allowed.

(c) Wave soldering

In wave soldering one or more continuously replenishedwaves of molten solder are generated, while the substratesto be soldered are moved in one direction across the crest ofthe wave. Maximum soldering temperature should notexceed 260 °C.Temperature/time profiles of the entire process are given infigure 2.For SMD devices which are qualified for wave soldering, thetemperature profile under figure 2 is also valid. For wavesoldering two cycles are allowed.

(d) Iron soldering

This process cannot be carried out in a controlled situation.It should therefore not be used in applications wherereliability is important. There is no SMD classification for thisprocess.

(e) Laser soldering

This is an excess heating soldering method. The energyabsorbed may heat the device to a much higher temperaturethan desired. There is no SMD classification for this processat the moment.

(f) Resistance soldering

This is a soldering method which usestemperature-controlled tools (thermodes) for making solderjoints. There is no SMD classification for this process at themoment.

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Assembly InstructionsVishay Semiconductors Assembly Instructions

TABLE 1 - SOLDERING METHODES AND TEMPERATURE PROFILES FOR OPTOCOUPLER REFLOW WAVE SOLDERING 260 °C

SMD SMD THROUGH HOLE

PACKAGE THROUGH WAVE

PACKAGE NOT THROUGH WAVE

PACKAGE PART NUMBER EXAMPLES ASSEMBLY METHODTEMP. PROFILE

FIG. 1TEMP. PROFILE

FIG. 2TEMP. PROFILE

FIG. 2

DIP-6 IL1; IL2; H11; IL250; IL410 Through hole X

DIP-8 IL300; SFH6700; 6N135 Through hole X

DIP-4/8/16 SFH617A-2; SFH615 Through hole X

DIP-6 CNY17; SFH615ABM Through hole X

DIP-4/8/16 TCET1104; TCET1104G Through hole X

DIP-4/8/16 VO615A Through hole X

DIP-6 CQY80NG; CNY75B; TCDT Through hole X

DIP-4/8/16 VO615A series SMD bend.opt. X No

DIP-4/8/16 SFH617A-2X007; 9; SFH6106 SMD bend.opt. X Yes

DIP-8 high speed SFH6700; 6N135; SFH6325 SMD bend.opt. X No

DIP-6 Types with option 7, 8 or 9 SMD bend.opt. X No

DIP-8; DIP-16 ILD2; ILQ2 SMD bend.opt. X No

DIP-8 IL300 SMD bend.opt. X No

SOP low profile TCMT; TCLT series SMD X Yes

SOP-16 low profile SFH6916 SMD X No

SOP-4 (Miniflat) SFH690 SMD X No

SO8 IL205T; ILD207AT SMD X Yes

SO8 VO026..; VO46..; VO06.. SMD X Yes

PCMCIA IL388 SMD X No

Minicoupler SFH6943 SMD X No

SSR’s

DIP-4 LH1546AD Through hole X

DIP-6 LH1500AT Through hole X

DIP-8 LH1526AB Through hole X

DIP-6 LHxxxBT Through hole X

DIP-8 LHxxxBB Through hole X

DIP-4 LH1546ADF SMD bend.opt. X No

DIP-6 LH1500AAB SMD bend.opt. X No

DIP-8 LH1526AAC SMD bend.opt. X No

Miniflat LH1546AEF; VO14.. SMD X No

Flatpak’s LH1556FP SMD bend.opt. X No

DIP-6 LHxxxBAB SMD bend.opt. X No

DIP-8 LHxxxBAC SMD bend.opt. X No

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Assembly InstructionsAssembly Instructions Vishay Semiconductors

TEMPERATURE-TIME PROFILES

Fig. 1 - Temperature Profile for Lead (Pb)-free Opto Devices

Fig. 2 - Wave Soldering Double Wave Opto Devices

HEAT REMOVALThe heat generated in the semiconductor junction(s) must bemoved to the ambient. In the case of low-power devices, thenatural heat conductive path between case and surroundingair is usually adequate for this purpose.In the case of medium-power devices, however, heatconduction may have to be improved by the use of star- orflag-shaped heat dissipators which increase the heatradiating surface.The heat generated in the junction is conveyed to the case orheader by conduction rather than convection; a measure ofthe effectiveness of heat conduction is the inner thermalresistance or junction-to-case thermal resistance, RthJC,whose value is given by the construction of the device.Any heat transfer from the case to the surrounding airinvolves radiation convection and conduction, theeffectiveness of transfer being expressed in terms of anRthCA value, i.e., the case-to-ambient thermal resistance.The total thermal resistance, junction-to-ambient istherefore:

RthJA = RthJC + RthCA

The total maximum power dissipation, Ptotmax., of asemiconductor device can be expressed as follows:

where:

Tjmax. the maximum allowable junction temperature

Tamb the highest ambient temperature likely to be reachedunder the most unfavorable conditions

RthJC the thermal resistance, junction-to-case

RthJA the thermal resistance, junction-to-ambient

RthCA the thermal resistance, case-to-ambient, depends oncooling conditions. If a heat dissipator or sink is used,then RthCA depends on the thermal contact betweencase and heat sink, heat propagation conditions inthe sink and the rate at which heat is transferred tothe surrounding air.

Therefore, the maximum allowable total power dissipation fora given semiconductor device can be influenced only bychanging Tamb and RthCA. The value of RthCA could beobtained either from the data of heat sink suppliers orthrough direct measurements.In the case of cooling plates as heat sinks, the approachoutlined in fig. 3 and 4 can be used as guidelines. The curvesshown in both fig. 3 and 4 give the thermal resistance RthCAof square plates of aluminium with edge length, a, and withdifferent thicknesses. The case of the device should bemounted directly onto the cooling plate.The edge length, a, derived from fig. 3 and 4 in order toobtain a given RthCA value, must be multiplied

with α and β:α' = α x βwhereα = 1.00 for vertical arrangementα = 1.15 for horizontal arrangementβ = 1.00 for bright surfaceβ = 0.85 for dull black surface

ExampleFor an IR emitter with Tjmax. = 100 °C and RthJC = 100 K/W,calculate the edge length for a 2 mm thick aluminum squaresheet having a dull black surface (β = 0.85) and verticalarrangement (α = 1),Tamb = 70 °C and Ptot max. = 200 mW.

0

50

100

150

200

250

300

0 50 100 150 200 250 300

Time (s)

Tem

pera

ture

(°C

)

255 °C240 °C 245 °C

max. 260 °C

max. 120 s max. 100 s

217 °C

max. 20 s

max. ramp up 3 °C/s

max. ramp down 6 °C/s

max. 2 cycles allowed

21620

2 K/s

secondwave

first wavewave

ca. 5 K/s

5 s

full line: typicaldotted line:process limits

Time (s)

Tem

pera

ture

(°C

)

300

250

200

150

100

50

00 50 100 150 200 250

94 8626

Lead temperature

235 °C to 260 °C

100 °C to 130 °C

ca. 200 K/s

forced cooling

ca. 2 K/s

Ptotmax.

Tjmax. Tamb–RthJA

---------------------------------------Tjmax. Tamb–RthJC RthCA+-----------------------------------------= =

Ptotmax.

Tjmax. Tamb–RthJC RthCA+-------------------------------------=

RthCA

Tjmax. Tamb–Ptotmax

--------------------------------------- RthJC–=

RthCA100 °C 70 °C–

0.2 W--------------------------------------- 100 K/W–=

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Assembly InstructionsVishay Semiconductors Assembly Instructions

can be calculated from the relationship:

Fig. 3

With RthCA = 50 k/W and ΔT = 10 °C, a plate of 2 mmthickness has an edge length α = 28 µ.

Fig. 4

However, equipment life and reliability have to be taken intoconsideration and therefore a larger sink would normally beused to avoid operating the devices continuously at theirmaximum permissible junction temperature.

RthCA30

0.2 ---------- 100 K/W–=

RthCA 50 K/W=

ΔT Tcase Tamb–=

Ptotmax.

Tjmax. Tamb–RthJC RthCA+-------------------------------------

Tcase Tamb–RthCA

----------------------------------= =

ΔT Tcase Tamb–RthCA Tjmax. Tamb–( )

RthJC RthCA+--------------------------------------------------------------= =

ΔT 50 K/W 100 °C 70 °C–×150 K/W

-----------------------------------------------------------------=

ΔT 50 K/W 30 °C×150 K/W

-------------------------------------------=

ΔT 10 °C 10 K= =

10 1001

10

100

Rth

CA (

K/W

)

a (mm)1000

ΔT = 10 °C

30 °C60 °C

120 °C

Plate thickness: 0.5 mm

94 7834

10 1001

10

100

Rth

CA (

K/W

)

a (mm)

1000

Plate thickness: 2 mm

ΔT = 10 °C

30 °C60 °C

120 °C

94 7835

Page 101: Bundle (1)

Document Number: 80060 For technical questions, please contact: [email protected] www.vishay.comRev. 1.5, 14-Jan-08 1

Handling Instructions

Handling InstructionsVishay Semiconductors

PROTECTION AGAINST ELECTROSTATICDAMAGEAlthough electrostatic breakdown is most often associatedwith IC semiconductor devices, optoelectronic devices arealso prone to electrostatic damage. Miniaturized and highlyintegrated components are particularly sensitive.

SENSITIVITYBreakdown Voltages

Typical electrostatic discharge in the working environmentcan easily reach several thousand volts, well above the levelrequired to cause a breakdown. As market requirements aremoving towards greater miniaturization, lower powerconsumption, and higher speeds, optoelectronic devices arebecoming more integrated and delicate. This means thatthey are becoming increasingly sensitive to electrostaticeffects.

Device Breakdown

Electrostatic discharge events are often imperceptible.However, some of the the following problems may occur.

Delay Failure

Electrostatic discharge may damage the device or change itscharacteristics without causing immediate failure. The devicemay pass inspection, move into the market, then fail duringits initial period of use.

Difficulty in Identifying Discharge Site

Human beings generally cannot perceive electrostaticdischarges of less than 3000 V, while semiconductor devicescan sustain damage from electrostatic voltages as low as100 V. It is often very difficult to locate the process at whichelectrostatic problems occur.

Basic Countermeasures

Optoelectronic devices should be protected from staticelectricity at all stages of processing. Each device must beprotected from the time it is received until the time it has beenincorporated into a finished assembly. Each processingstage should incorporate the following measures.

Suppression of Electrostatic Generation

Keep relative humidity at 50 to 70 % (if humidity is above70 %, morning dew may cause condensation). Removematerials which might cause electrostatic generation (suchas synthetic resins) from your workplace. Check theappropriateness of floor mats, clothing (uniforms, sweaters,shoes), parts trays, etc. Use electrostatically safe equipmentand machinery.

Removal of Electrostatic Charges

Connect conductors (metals, etc.) to ground, usingdedicated grounding lines. To prevent dangerous shocksand damaging discharge surges, insert a resistance of800 kΩ between conductor and grounding line.Connect conveyors, solder baths, measuring machines, andother equipment to ground, using dedicated, grounding lines.Use ionic blowers to neutralize electrostatic charges oninsulators. Blowers pass charged air over the targetedobject, neutralizing the existing charge. They are useful fordischarging insulators or other objects that cannot beeffectively grounded.

Human Electrostatic

The human body readily picks up electrostatic charges, andthere is always some risk that human operators may causeelectrostatic damages to the semiconductor devices theyhandle. The following measures are essential.

Anti-Static Wrist Straps

All people who come into direct contact with semiconductorsshould wear anti-static wrist straps, i.e., those in charges ofparts supply and people involved in mounting, boardassembly and repair.Be sure to insert a resistance of 800 kΩ to 1 MΩ into thestraps. The resistance protects against electrical shocks andprevents instantaneous and potentially damagingdischarges from charged semiconductor devices.The straps should be placed next to the skin, placing themover gloves, uniforms or other clothing reduces theireffectiveness.

Antistatic Mats, Uniforms and Shoes

The use of anti-static mats and shoes is effective in placeswhere use of a wrist strap is inconvenient (for example, whenplacing boards into returnable boxes). To prevent staticcaused by friction with clothing, personnel should wearanti-static uniforms, gloves, sleeves aprons, finger covers, orcotton apparel.

Protection during Inspection, Mounting and Assembly

Each individual must ensure that hands do not come intodirect contact with leads. Avoid non-conductive fingercovers. Cover the work desk with grounded anti-static mats.

Storage and Transport

Always use conductive foams, tubes, bags, reels or trayswhen storing or transporting semiconductor devices.

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Handling InstructionsVishay Semiconductors Handling Instructions

MOUNTING PRECAUTIONS

Installation

Installation on PWB

When mounting a device on PWB whose pin-hole pitch doesnot match the lead pin pitch of the device, reform the devicepins appropriately so that the internal chip is not subjected tophysical stress.

Installation Using a Device Holder

Emitters and detectors are often mounted using a holder.When using this method, make sure that there is no gapbetween the holder and device.

Installation Using Screws

When lead soldering is not adequate to securely retain aphoto interrupter, it may be retained with screws.The tightening torque should not exceed 6 kg/cm3. Anexcessive tightening torque may deform the holder, whichresults in poor alignment of the optical axes and degradesperformance.

Lead Forming

Lead pins should be formed before soldering. Do not applyforming stress to lead pins during or after soldering. For lightemitters or detectors with lead frames, lead pins should beformed just beneath the stand-off cut section. Foroptocouplers or opto sensors using dual-in-line packages,lead pins should beformed below the bent section so thatforming stress does not affect the inside of the device. Stressto the resin may result in disconnection.When forming lead pins, do not bend the same portionrepeatedly, otherwise the pins may break.

CLEANING

General

Optoelectronic devices are particularly sensitive with regardto cleaning solvents. The Montreal Protocol forenvironmental protection calls for a complete ban on the useof chlorofluorocarbons. Therefore, the most harmlesschemicals for optoelectronic devices should be used forenvironmental reasons. The best solution is to use a modemreflow paste or solder composition which does not require acleaning procedure. No cleaning is required when the fluxesare guaranteed to be non-corrosive and of high, stableresistivity.

Cleaning Procedures

Certain kinds of cleaning solvents can dissolve or penetratethe transparent resins which are used in some types ofsensors. Even black molding components used in standardisolators are frequently penetrated between the moldcompound and lead frame. Inappropriate solvents may alsoremove the marking printed on a device. It is therefore

essential to take care when choosing solvents to removeflux.Cleaning is not required if the flux in the solder material isnon-aggressive and any residues are guaranteed to be noncorrosive an long-term stable of high resistivity. In cleaningprocedures using wet solvents only high purity Ethyl andIsopropyl alcohol are recommended.In each case, the devices are immersed in the liquid fortypically 3 min and afterwards immediately dried for at least15 min at 50 °C in dry air.

Precautions

Intensified cleaning methods such as ultrasonic cleaning,steam cleaning, and brushing can cause damage tooptoelectronic devices. They are generally notrecommended.Ultrasonic cleaning (unless well controlled) can damage thedevices due to mechanical vibrations. Using high-intensity ultrasonic cleaning, the process might:

a. Promote dissolution or crack the package surface andthus affect the performance of e.g., the sensors

b. Promote separation of the lead frame and resin and thusreduce humidity resistance

c. Promote the breakage of band wires

This method should only be used after extensive trials havebeen run to ensure that problems do not occur. Brushing canscratch package surfaces. Moreover, it can remove printedmarkings.Special care should be taken to use only high purity orchemically well-controlled solvents. Chloride ions, from fluxor solvents that remain in the package are a high risk for thelong-time stability of any electronic device. These as well asother promote corrosion on the chip which can interrupt allbond connections to the outside leads.

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Document Number: 80123 For technical questions, contact: [email protected] www.vishay.comRev. 1.9, 09-Nov-10 75

Standard Marking on Optocouplers

Standard MarkingVishay Semiconductors

Fig. 1 - 6 Pin

Fig. 2 - Single and Dual SO-8

Fig. 3 - DIP-6 Products

Fig. 4 - Minicoupler

Fig. 5 - DIP-4 Products

Fig. 6 - DIP-8 Products

V WPXXXY 68

Vishay logo

Date code (year, week)

Package code

Plant code

Product codeCustomer code/identification/option

17916

UL logo

XXXXXXXXXX

CL

17935

Vishay logo

Date code (year, week)

Package code

Plant code

Product codeRegistrationtype, numberD213

VXXXY68

V XXX 24

Vishay logo

Date code (year, week)

Plant code

Product code

Customer code/identification/option

17936

VDE logo

UL logo

VD E

XXXXXXXXXX

Vishay logo

Date code (year, week)

Package code

Plant code

Registrationtype, numberProduct code

17937

V XXXY 686941 - YE1

Vishay logo

Date code(year, week)

Package code Plant code

Manufacturer identification/product code/type

VDE logo

Customer code/identification/option

17938

XXXY 68 VD E

SFH6156-3V XXXXX

Vishay logo

Date code (year, week) Package code

Plant code

Product codeCustomer code /identification /option

VDE logo

17939

UL logo

VD E

XXXXXXXXXX

V XXXY 68

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Standard MarkingVishay Semiconductors Standard Marking on Optocouplers

Fig. 7 - PCMCIA Products

Fig. 8 - Pin Miniflat/4 Pin Flatpack

Fig. 9 - DIP-16 Products

Fig. 10 - 16 Pin Miniflat

Markings

For the marking of product options please see the datasheet or the option information sheet www.vishay.com/doc?83713

Vishay logo

Date code(year, week)

Package code

Plant code

Product code/Customer code

17940

350XV XXXY 68

17944

Vishay logo

Date code(year, week)

Package code Plant code

Product code

XXXXV XXX

Y 68

17941

Vishay logo

Date code (year, week) Package code

Plant code

Product codeCustomer code/identification/option VDE logo

UL logo

VD EXXXXXXXXXX

V XXXY 68

SFH6916V XXXY 68

17942 Vishay logo Date code (year, week) Package code

Plant codeProduct code

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Document Number: 83713 For technical questions, contact: [email protected] www.vishay.comRev. 1.8, 18-Oct-10 1

Option Information

Option InformationVishay Semiconductors

Optocoupler lead-bend configurations are available asoptions. In addition, partial discharge testing as perVDE/IEC is also available as an option.See the order information section in the data sheet todetermine if and which options are available to a specificproduct. Contact the Vishay sales office for other optionconfigurations. The options are:

Option 1 VDE option

Option 6 400 mil (10.16 mm) lead spread DIPconfiguration

Option 7 Surface mount, gull wing DIP configuration withstandoff

Option 8 Surface mount, gull wing DIP configuration withincreased clearance

Option 9 Surface mount, gull wing DIP configuration

ORDERING OPTIONS A specific option or combination of options can be orderedby add the options definition field following the base partnumber and CTR range (if applicable) as presented in thefollowing example:

This field is always 4 characters long and commences withthe character X. In the case of surface mounted products inTape and Reel format, the tape and reel option character “T”will follow this field. The possible combinations for theseFields (1) are:

X001, X006, X007, X008, X009, X001T (2), X007T, X008T,X009T, X016, X017, X018, X019, X017T, X018T, X019T

Notes(1) Not all options are available for all product types.(2) The X001T option is only available on products that are available

on the following SMD products SFH6106, SFH6156, SFH6186,SFH6206 and SFH6286 series, e.g. SFH6106-3X001T .

OPTION 1OPTOCOUPLERS FOR SAFE ELECTRICALINSULATION PER DIN EN 60747-5-5(VDE 0884) (1)

The optocoupler listed are suitable for safe electricalinsulation only within the safety maximum ratings.Compliance with the safety maximum ratings must beensured by protective circuits.The partial discharge measurement ensures that no partialdischarge occurs during operation at maximum permissibleoperating insulation voltage (VIORM). Permanent partialdischarge affects the insulating materials and can result in ahigh voltage breakdown.It is recommended that tests with the insulation test voltage(VISOL) should not be made, otherwise partial discharge mayoccur impairing the insulation characteristics. Thus partialdischarges also may occur at the maximum permissibleoperating insulation voltage.The insulation test per DIN EN 60747-5-5 (VDE 0884) iscarried out after all the other tests

18482

S F H 6 1 5 A - 3 X 0 9 T

Prefix Base Part Number CTR Ranges Options Definition Tape andReel Option

BRTIlILDILQSFH6VO

1 = 40 % to 80 %2 = 63 % to 125 %3 = 100 % to 200 %4 = 160 % to 320 %5 = or 50 % to 150 % (1)

6 = 100 % to 300 % (1)

7 = 80 % to 160 % (1)

8 = 130 % to 260 % (1)

9 = 200 % to 400 % (1)

250 % to 500 %

Option 1 Optocouplers for safe electr icalInsulation per DIN VDE 0884

Option 6 Optocouplers with 10.16 mm (0.4")through hole lead spread

Option 7 Optocouplers with SMD lead form bend,0.9 mm maximum standoff height

Option 8 Optocouplers with 10.16 mm (0.4") SMDlead form bend

Option 9 Optocouplers with SMD lead form bend,0.25 mm maximum standoff height

Option 1 may be combined with the otherlead forming options.

Option T may only be combined withOptions 7, 8, and 9

CNY17F-2X017T4N35-X016SFH615-3X001VO615A-9X007T

Examples:

Note (1) Used on selected products, consult data sheet for details

0

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Option InformationVishay Semiconductors Option Information

Fig. 1 - Time Voltage Diagram per DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending)

V INITIA L

0. 1 t o 1 kV/µs

V Pr

V IORM

10 st p = 60 s

12 s 1.0 s 1 s

t

V V Pr

V IORM

tp = 1 .0 s 0.1 s 0.1 s

1. 2 s

V

t

tp: measuring time for par tial dischage

Procedure a.Type and sampling tests, destructive tests

tp: measuring time for partial dischage

Procedure b.Routine tests, non-destructive tests 17928-1

DESCRIPTION SYMBOL SYSTEM 1 UNIT

DIP4 DIP8 DIP16SFH610A-.. ILCT6 ILQ1/2/5/74SFH615A-.. ILD1/2/5/74 ILQ30/31/55

SFH615AA-.. ILD30/31/55 ILQ32SFH615AGB-.. ILD32 ILQ66-..SFH615AGR-.. ILD66-.. ILQ615-..

SFH617A-.. ILD250/1/2 ILQ620-..SFH618A-.. ILD255 ILQ620GB-..SFH620A-.. ILD621GB-.. ILQ621-..

SFH620AA-.. ILD621-.. ILQ621GB-..SFH620AGB-.. ILD621GB-..

SFH628A-.. ILD755-..SFH6106-.. ILD766-..SFH6116-.. MCT6SFH6156-..SFH6186-..SFH6206-..SFH6286-..

Installation category (DIN VDE 0110)For rated line voltages ≤ 300 VRMS I - IVFor rated line voltages ≤ 600 VRMS I - IVFor rated line voltages ≤ 1000 VRMS

IEC climatic category (DIN IEC 60068 Part 1/9.80) 55/100/21Pollution degree (DIN VDE 0110 Part 1/1.89) 2Maximum operation insulating voltage (1) VIORM 890 V

Test voltage input/output, procedure b (1) VPr = 1.875 x VIORM, routine 100 % test, tp = 1 s, partial discharge < 5 pC VPr 1669 V

Test voltage input/output, procedure a (1) VPr = 1.5 x VIORM, type and sampling test tp = 60 s, partial discharge < 5 pC VPr 1335 V

Maximum permissible overvoltage (transient overvoltage) VIOTM 8000 VPartial discharge test voltage (1) VINITIAL 8000 V

Safety maximum ratings (maximum permissible ratings in case of a fault, also refer to d diagram) Package temperatureCurrent (input current IF, PSi = 0, TA = 25 °C)Derating with higher ambient temperaturePower (output or total power dissipation, TA = 25 °C)Derating with higher ambient temperature

TsiIsi

DISiPSi

ΔPSi

175275

- 1.83400

- 2.67

°CmA

mA/KmW

mW/KInsulation resistance at TSi VI/O = 500 V RIS > 10 9 W

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Option InformationOption Information Vishay Semiconductors

DESCRIPTION SYMBOL SYSTEM 2 UNIT

4N25/26/27/28 IL250 MCT5210

4N35/36/37/38/39 IL251 MCT5211

4N32/33 IL252 SFH600-..

CNY17-.. IL255-.. SFH601-..

CNY17F-.. IL400 SFH608-..

H11A-.. IL755-.. SFH640-..

H11AA1-.. IL755B-.. MOC8050

H11B-.. IL766-.. IL56B-..

H11B1-.. IL766B-.. MOC8021

H11C-.. MCA230/231 MOC8112

H11D-.. MCA255 MOC8102/03/04/05

IL1/2/5/74 MCT2/2E

IL2B-.. MCT270/271

IL30/31/55 MCT272

IL55B-.. MCT273/274

IL66-.. MCT275

IL66B-.. MCT276/277

IL201/202/203

Installation category (DIN VDE 0110)

For rated line voltages ≤ 300 VRMS I - IV

For rated line voltages ≤ 600 VRMS I - IV

For rated line voltages ≤ 1000 VRMS

IEC climatic category (DIN IEC 60068 Part 1/9.80) 55/100/21

Pollution degree (DIN VDE 0110 Part 1/1.89) 2

Maximum operation insulating voltage (1) VIORM 890 V

Test voltage input/output, procedure b (1)

VPr = 1.875 x VIORM, routine 100 % test, tp = 1 s, partial discharge < 5 pC

VPr 1669 V

Test voltage input/output, procedure a (1)

VPr = 1.5 x VIORM, type and sampling test tp = 60 s, partial discharge < 5 pC

VPr 1335 V

Maximum permissible overvoltage (transient overvoltage) VIOTM 8000 V

Partial discharge test voltage (1) VINITIAL 8000 V

Safety maximum ratings(maximum permissible ratings in case of a fault, also refer to diagram)Package temperatureCurrent(input current IF, PSi = 0, TA = 25 °C)Derating with higher ambient temperaturePower (output or total power dissipation, TA = 25 °C)Derating with higher ambient temperature

TsiIsi

DISiPSi

ΔPSi

175400

- 2.67700

- 4.67

°CmA

mA/KmW

mW/K

Insulation resistance at TSi VI/O = 500 V RIS > 10 9 W

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Option InformationVishay Semiconductors Option Information

NotesAll voltages referred to are peak values except otherwise specified.(1) See time-test voltage diagram(2) In preparation

Testing input/output voltage requires all input pins and all output pins to be shortedOption 1: Tested per DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 (pending)Option 6: Wide lead spacing (10.16 mm creepage/clearance distances > 8 mm)Option 7: Surface mount leads (creepage/clearance distances > 8 mm)Option 8: Surface mount leadsOption 9: Surface mount leadsSee CECC 00802, edition 1, for soldering conditions for SMT devices (option 7 and 9)."-.." means dash selections

DESCRIPTION SYMBOL SYSTEM 4 (2) SYSTEM 5 SYSTEM 7 UNIT

IL410 6N135 IL300

IL420 6N136 IL300E

IL4116 SFH6135 IL300F

IL4117 SFH6136 IL300EF

IL4118 6N138 IL300DEFG

IL4216 SFH6138

IL4217 SFH6139

IL4218 6N139

SFH6345

Installation category (DIN VDE 0110)

For rated line voltages ≤ 300 VRMS I - IV I - IV I - IV

For rated line voltages ≤ 600 VRMS I - III I - IV I - IV

For rated line voltages ≤ 1000 VRMS

IEC climatic category (DIN IEC 60068 Part 1/9.80) 55/100/21 55/100/21 55/100/21

Pollution degree (DIN VDE 0110 Part 1/1.89) 2 2 2

Maximum operation insulating voltage (1) VIORM 850 630 890 V

Test voltage input/output, procedure b (1)

VPr = 1.875 x VIORM, routine 100 % test, tp = 1 s, partial discharge < 5 pC

VPr 1594 1181 1669 V

Test voltage input/output, procedure a (1)

VPr = 1.5 x VIORM, type and sampling Test tp = 60 s, partial discharge < 5 pC

VPr 1275 945 1335 V

Maximum permissible overvoltage (transient overvoltage) VIOTM 6000 8000 8000 V

Partial discharge test voltage (1) VINITIAL 6000 8000 8000 V

Safety maximum ratings(maximum permissible ratings in case of a fault, also refer to diagram)Package temperatureCurrent(input current IF, PSi = 0, TA = 25 °C)Derating with higher ambient temperaturePower (output or total power dissipation, TA = 25 °C) Derating with higher ambient temperature

TsiIsi

DISiPSi

ΔPSi

175250

- 1.65500

- 3.33

175300

- 2500

- 3.33

165235

- 1.57465- 3.1

°CmA

mA/KmW

mW/K

Insulation resistance at TSi VI/O = 500 V RIS > 10 9 > 10 9 > 10 9 W

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Option InformationOption Information Vishay Semiconductors

OPTION 6DIP OPTOCOUPLERS WITH 0.4" (10.16 mm)LEAD SPREADThe leads of the optocouplers are bent according to aspacing of 0.4" (10.16 mm). Dimensions deviating from thestandard type are:Lead spacing 10.16 mm (0.4")Creepage distance > 8 mmClearance > 8 mm

This version additionally complies with the followingstandards:

• IEC 60950 DIN VDE 0805/05 90 (System 2 and 3 only)Reinforced insulation up to an operating voltage of 400VRMS or DC

Clearance-creepage distance = 8 mm min. See standard version for pin configuration

OPTION 7LEAD BENDS FOR SURFACE MOUNTOPTOCOUPLERSThese optocouplers are suitable for surface mounting.Dimensions deviating from the standard type are:Creepage distance > 8 mmClearance distance > 8 mm

This version additionally complies with the followingstandards:

• IEC 60950 DIN VDE 0805/05 90 (system 2 and 3 only)Reinforced insulation up to an operating voltage of400 VRMS or DC

During the soldering process, the package should not bewetted with tin-lead solder to prevent the impairment of theisolation features. Apart from iron soldering, only reflowsoldering methods (vapor phase, infrared and hot gas) arepermissible.Permissible soldering conditions for SMD bending options:please see reflow soldering profileThe soldering process may be repeated two times at themost. Attention must be paid to the cooling down of thedevice to 25 °C between the soldering processes.

Clearance and creepage distances must be considered forthe solder pad design.Clearance-creepage distance = 8 mm min.See standard version for pin configuration.

OPTION 8LEAD BENDS FOR SURFACE MOUNT OPTOCOUPLERSThese optocouplers are suitable for surface mounting.Dimensions deviating from the standard type are:Creepage distance > 8 mmClearance distance > 8 mm

This version additionally complies with the followingstandards:

• IEC 60950 DIN VDE 0805/05 90 (system 2 and 3 only)Reinforced insulation up to an operating voltage of400 VRMS or DC

During the soldering process, the package should not bewetted with tin-lead solder to prevent the impairment of theisolation features. Apart from iron soldering, only reflowsoldering methods (vapor phase, infrared and hot gas) arepermissible.Permissible soldering conditionsfor SMD bending options:please see reflow soldering profileThe soldering process may be repeated two times at themost. Attention must be paid to the cooling down of thedevice to 25 °C between the soldering processes

20802-5 10.16 typ.

7.62 typ.

3.5 ± 0.3

2.55 ± 0.25

0.1 min.

17931-1

8 min.

7.62 typ.

4.64.1

8.4 min.

10.3 max.

0.7 min.

DIP 4/8/16

DIP 6

8.41 min.

3.813.30

10.3 max.

0.900.51

7.62 typ.

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Option InformationVishay Semiconductors Option Information

Clearance and creepage distances must be considered forthe solder pad design.Clearance-creepage distance = 8 mm min.See standard version for pin configuration.

OPTION 9LEAD BENDS FOR SURFACE MOUNT OPTOCOUPLERSDuring the soldering process, the package should not bewetted with tin-lead solder to prevent the impairment of theisolation features. Apart from iron soldering, only reflowsoldering methods (vapor phase, infrared and hot gas) arepermissible.Permissible soldering conditionsfor SMD bending options:please see reflow soldering profileThe soldering process may be repeated two times at themost. Attention must be paid to the cooling down of thedevice to 25 °C between the soldering processes.

MARKINGS Product marking is defined in the data sheets. In the caseswhere marking is not defined in the datasheet, the followingtable defines the option information that is marked on theproduct.

Note(1) X1 is used on the SOP and SOIC-8 where there are space

constraints.

DIP 4

DIP 67.62 typ.

3.813.30

12 max.

9.27 min.

12 max.

9.27 min.

0.500.00

7.62 typ.

3.813.30

0.500.00

17932-1

0.511.02

7.62 ref.

9.5310.03

0.30 typ.0.1020.249

15° max.

17933-1

OPTION TYPE MARKING

X001, X001T X001, X1 (1)

X006 No mark

X007, X007T X007

X008, X008T X008

X009, X009T No mark

X016 X001

X017, X017T X017

X018, X018T X018

X019, X019T X001

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Quality Information

www.vishay.com For technical questions, contact: [email protected] Document Number: 8011996 Rev. 1.5, 12-Mar-08

Quality InformationVishay Semiconductors

Fig. 1 - VISHAY Quality Policy

Our goal is to exceed the quality

expectations of our customers.

This commitment starts with top

management and extends through

the entire organization. It is achieved

through innovation, technical excellence

and continuous improvement.

Corporate Quality Policy

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Quality InformationQuality Information Vishay Semiconductors

VISHAY INTERTECHNOLOGY, INC.ENVIRONMENTAL, HEALTH AND SAFETY POLICY

VISHAY INTERTECHNOLOGY, INC. is committed to conducting its worldwide operations in a socially responsible and ethicalmanner to protect the environment, and ensure the safety and health of our employees to conduct their daily activities in anenvironmentally responsible manner.

Protection of the Environment: Conduct our business operation in a manner that protects the environmental quality of thecommunities in which our facilities are located. Reduce risks involved with storage and use of hazardous materials. The companyis also committed to continual improvement of its environmental performance.

Compliance with Environmental, Health and Safety Laws and Regulations:Comply with all relevant environmental, health and safety laws and regulations in every location. Maintain a system that providestimely updates of regulatory change.Cooperate fully with governmental agencies in meeting applicable requirements.

Energy, Resource Conservation and Pollution Control: Strive to minimize energy and material consumption in the design ofproducts and processes, and in the operation of our facilities. Promote the recycling of materials, including hazardous wastes,whenever possible. Minimize the generation of hazardous and non-hazardous wastes at our facilities to prevent or eliminatepollution. Manage and dispose of wastes safely and responsibly.

Fig. 2 - VISHAY Quality Road Map

QUALITY SYSTEM

QUALITY PROGRAMAt the heart of the quality process is the VISHAY worldwidequality program. This program, which has been in placesince the early 90's, is specifically designed to meet rapidlyincreasing customer quality demands now and in the future.Vishay Corporate Quality implements the Quality Policy andtranslates its requirements for use throughout the worldwideorganization.VISHAY Quality has defined a roadmap with specific targetsalong the way. The major target is to achieve world-classexcellence throughout VISHAY worldwide.

VISHAY CORPORATE QUALITYThe VISHAY Corporate Quality defines and implements theVISHAY quality policy at a corporate level. It acts toharmonize the quality systems of the constituent divisionsand to implement Total Quality Management throughout thecompany worldwide.

Vishay Zero Defect Program

• Exceeding quality expectations of our customers• Commitment from top management through entire

organization• Newest and most effective procedures and tools

- design, manufacturing and testing- management procedures (e.g. SPC, TQM)

• Continuous decreasing numbers for AOQ and failure rate• Detailed failure analysis using 8D methodology• Continuous improvement of quality performance of parts

and technology

17275

Business Excellence 2010

1990

1995

2000 ISO/TS 16949

ISO 14000 QS 9000/VDA 6.1

EFQM ISO 9000

Cost of Quality

World Class Excellence

Advanced Quality Tools

Six Sigma Strategy

Empowered Improvement Team

Integrated Management system Zero Defect Strategy

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Quality InformationVishay Semiconductors Quality Information

QUALITY GOALS AND METHODSThe goals are straightforward: Customer satisfaction throughcontinuous improvement towards zero defects in every areaof our operation. We are committed to meet our customers'requirements in terms of quality and service. In order toachieve this, we build excellence into our product fromconcept to delivery and beyond.

• Design-in QualityQuality must be designed into products. VISHAY usesoptimized design rules based on statistical information.This is refined using electrical, thermal and mechanicalsimulation together with techniques such as FMEA, QFDand DOE.

• Built-in QualityQuality is built into all VISHAY products by using qualifiedmaterials, suppliers and processes. Fundamental to this isthe use of SPC techniques by both VISHAY and itssuppliers. The use of these techniques, as well as trackingcritical processes, reduces variability, optimizing theprocess with respect to the specification. The target isdefect prevention and continuous improvement.

• QualificationAll new products are qualified before release by submittingthem to a series of mechanical, electrical andenvironmental tests. The same procedure is used for newor changed processes or packages.

• MonitoringA selection of the same or similar tests used forqualification is also used to monitor the short- andlong-term reliability of the product.

• SPC (Statistical Process Control)SPC is an essential part of all VISHAY process control. Ithas been established for many years and is used as a toolfor the continuous improvement of processes bymeasuring, controlling and reducing variability.

• VISHAY Quality SystemAll VISHAY's facilities worldwide are approvedto ISO 9000. In addition, depending on their activities,some VISHAY companies are approved to recognizedinternational and industry standards such asISO/TS 16949.Each subsidiary goal is to fulfill the particular requirementsof customers. The Opto Divisions of Vishay SemiconductorGmbH are certified according to ISO/TS 16949.

The procedures used are based upon these standards andlaid down in an approved and controlled Quality Manual.

BUSINESS EXCELLENCETotal Quality Management is a management systemcombining the resources of all employees, customers andsuppliers in order to achieve total customer satisfaction. Thefundamental elements of this system are:

• Management commitment

• EFQM assessment methodology

• Employee Involvement Teams (EITs)

• Supplier development and partnership

• Quality tools

• Training

• Quality system

• Six sigma

• Automotive excellence program (AEP)

• Zero defect

All VISHAY employees from the senior managementdownwards are trained in understanding and use of TQM.Every employee plays its own part in the continuousimprovement process which is fundamental to TQM and ourcorporate commitment to exceed customers' expectations inall areas including design, technology, manufacturing,human resources, marketing, and finance. Everyone isinvolved in fulfilling this goal. The management believes thatthis can only be achieved by employee empowerment.

The VISHAY corporate core values

• Leadership by example

• Employee empowerment

• Continuous improvement

• Total customer satisfaction

are the very essence of the VISHAY Quality Movementprocess.

• Training

VISHAY maintains that it can only realize its aims if theemployees are well trained. It therefore invests heavily incourses to provide all employees with the knowledge theyneed to facilitate continuous improvement. A training profilehas been established for all employees with emphasis beingplaced on total quality leadership. Our long-term aim is tocontinuously improve our training so as to keep ahead ofprojected changes in business and technology.

• EFQM Assessment Methodology

From 1995, VISHAY has started to introduce the EFQM(European Foundation for Quality Management)methodology for structuring its Total Quality Managementapproach. This methodology, similar to the Malcolm Baldrigeprocess, consists in self-assessing the various VISHAYdivisions and facilities according to nine business criteria:

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Quality InformationQuality Information Vishay Semiconductors

• Leadership

• People

• Policy and strategy

• Partnership and resources

• Processes

• People results

• Customer results

• Society results

• Key performance results

(See figure 3)

The assessments are conducted on a yearly basis by trainedand empowered, internal VISHAY assessors. This permits the identification of key-priority improvementprojects and the measurement of the progressaccomplished.The EFQM methodology helps VISHAY to achieveworld-class business excellence.

• Employee Involvement Teams

At VISHAY we believe that every person in the company hasa contribution to make in meeting our target of customersatisfaction. Management therefore involves employees tohigher and higher levels of motivation, thus achieving higherlevels of effectiveness and productivity. Employeeinvolvement teams, which are both functional and crossfunctional, combine the varied talents from across thebreadth of the company. By taking part in training, theseteams are continually searching for ways to improve theirjobs, achieving satisfaction for themselves, the company andmost important of all the customer.

Fig. 3 - EFQM Criteria for Self-Assessment

TQM TOOLSAs part of its search for excellence, VISHAY employs manydifferent techniques and tools. The most important of themare:

• AuditingAs well as third party auditing employed for approval by ISO9000 and customers, VISHAY carries out its own internaland external auditing. There is a common auditing procedurefor suppliers and sub-contractors between the VISHAYentities. This procedure is also used for inter-companyauditing between the facilities within VISHAY. It is based onthe "Continuous Improvement" concept with heavy emphasison the use of SPC and other statistical tools for the controland reduction of variability.Internal audits are carried out on a routine basis. Theyinclude audits of satellite facilities (e.g., sales offices,warehousing etc.). Audits are also used widely to determineattitudes and expectations both within and outside thecompany.

• Failure Mode and Effect Analysis (FMEA)FMEA is a technique for analyzing the possible methods offailure and their effect upon the performance/reliability of theproduct/process. Process FMEAs are performed for allprocesses. In addition, product FMEAs are performed on allcritical or customer products.

KeyPerformance

Results15 %

Results

People Results9 %

CustomerResults

20 %

Society Results6 %

Processes14 %

Enablers

People9 %

Partnershipand Resources

9 %

Leadership10 %

Policy andStrategy

8 %

Innovation and learning

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Quality InformationVishay Semiconductors Quality Information

• Design of Experiments (DOE)There is a series of tools that may be used for the statisticaldesign of experiments. It consists of a formalized procedurefor optimizing and analyzing experiments in a controlledmanner. Taguchi and factorial experiment design areincluded in this. They provide a major advantage indetermining the most important input parameters, makingthe experiment more efficient and promoting commonunderstanding among team members of the methods andprinciples used.

• Gauge Repeatability and Reproducibility (GR and R)This technique is used to determine equipment’s suitabilityfor purpose. It is used to make certain that all equipment iscapable of functioning to the required accuracy andrepeatability. All new equipment is approved before use bythis technique.

• Quality Function Deployment (QFD)

QFD is a method for translating customer requirements intorecognizable requirements for VISHAY’s marketing, design,research, manufacturing and sales (including after-sales).QFD is a process, which brings together the life cycle of aproduct from its conception, through design, manufacture,distribution and use until it has served its expected life.

QUALITY SERVICEVISHAY believes that quality of service is equally asimportant as the technical ability of its products to meet theirrequired performance and reliability.Our objectives therefore include:

• On-time delivery

• Short response time to customers’ requests

• Rapid and informed technical support

• Fast handling of complaints

• A partnership with our customers

• Customer Quality

Complaints fall mainly into two categories:

• Logistical

• Technical

VISHAY has a procedure detailing the handling ofcomplaints. Initially complaints are forwarded to theappropriate sales office where in-depth informationdescribing the problem, using the VISHAY Product AnalysisRequest and Return Form (PARRF), is of considerable helpin giving a fast and accurate response. If it is necessary tosend back the product for logistical reasons, the Sales Officeissues a Returned Material Authorization (RMA) number. On receipt of the goods in good condition, credit isautomatically issued.

If there is a technical reason for complaint, a sample togetherwith the PARRF is sent to the Sales Office for forwarding tothe Failure Analysis Department of the supplying facility. Thedevice's receipt will be acknowledged and a report issued oncompletion of the analysis. The cycle time for this analysishas set targets and is constantly monitored in order toimprove the response time. Failure analysis normallyconsists of electrical testing, functional testing, mechanicalanalysis (including X-ray), decapsulation, visual analysis andelectrical probing. Other specialized techniques (e.g. LCD,thermal imaging, SEM, acoustic microscopy) may be used ifnecessary.

If the analysis uncovers a quality problem, a CorrectiveAction Report (CAR) in 8D format will be issued. Anysubsequent returns are handled with the RMA procedure.

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Quality InformationQuality Information Vishay Semiconductors

Complaint and Return Procedure

Yes

No

Customer notifies Vishay SalesOffice of a complaint and Sales obtainsthe necessary information about returnusing attached form (Product AnalysisRequest and Return Form)

Customer has a complaintregarding Commercial Aspectse.g. Incorrect products, stockrotation, wrong delivery times orquantities

Customer has a complaintregarding Technical Aspects e.g.Product out of specification,labeling error, and packagingissues

Customer sends samples todesignated factory location(communicated by Sales)

Customer receives an analysisreport from Vishay with referencenumber

End of return procedure

Entitled toreturn/replacementproducts

Sales assign RMA numberand Customer returnsproduct18354

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Quality InformationVishay Semiconductors Quality Information

Product Analysis Request and Return Form (PARRF)

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Quality InformationQuality Information Vishay Semiconductors

VISHAY 8D Form18356

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Quality InformationVishay Semiconductors Quality Information

• Change NotificationAll product and process changes are controlled and releasedvia ECN (Engineering Change Notification). This requires theapproval of the relevant departments. In the case of a majorchange, the change is forwarded to customers via Sales/Marketing before implementation. Where specificagreements are in place, the change will not be implementedunless approved by the customer.

QUALITY AND RELIABILITY

ASSURANCE PROGRAMThough both quality and reliability are designed into allVISHAY products, three basic programs must assure them:

• Average Outgoing Quality (AOQ) - 100 % testing isfollowed by sample testing to measure the defect level ofthe shipped product. This defect level (AOQ) is measuredin ppm (parts per million).

• Reliability qualification program - to assure that the design,process or change is reliable.

• Reliability monitoring program - to measure and assurethat there is no decrease in the reliability of the product.

AOQ PROGRAMBefore leaving the factory, all products are sampled after100 % testing to ensure that they meet a minimum qualitylevel and to measure the level of defects. The results areaccumulated and expressed in ppm (parts per million). Theyare the measure of the average number of potentially failedparts in deliveries over a period of time. The sample sizeused is determined by AQL or LTPD tables depending uponthe product. No rejects are allowed in the sample.The AOQ value is calculated monthly using the methoddefined in standard JEDEC 16:

where:

LAR = lot acceptance rate:

The AOQ values are recorded separately with regard toelectrical and mechanical (visual) rejects by product type andpackage.

RELIABILITY AND QUALIFICATIONQualification is used as a means of verifying that a newproduct or process meets specified reliability requirements.This is also used to verify and release changes to productsor processes including new materials, packages andmanufacturing locations. At the same time it provides ameans to obtain information on the performance andreliability of new products and technologies.There are three types of qualification and release:

• Wafer process/technology qualification

• Package qualification

• Product/device qualification

The actual qualification procedure depends on which ofthese (or combinations of these) are to be qualified. Normallythere are three categories of qualification in order of degreeof qualification and testing required.

For the qualification there are two different standards. ForCommodity and Industrial products the Vishay internalstandard is used. For Automotive grade parts, thequalification is done according to AEC Q101.

Accelerated testing is normally used in order to produceresults fast. The stress level employed depends upon thefailure mode investigated. The stress test is set so that thelevel used gives the maximum acceleration withoutintroducing any new or untypical failure mode.

The tests used consist of a set of the following:

• High temperature life test (static)

• High temperature life test (dynamic)

• HTRB (high temperature reverse bias)

• Humidity 85/85 (with or without bias)

• Temperature cycling

• High-temperature storage

• Low-temperature storage

• Marking permanency

• Lead integrity

• Solderability

• Resistance to solder heat

• Mechanical shock (not plastic packages)

• Vibration (not plastic packages)

• ESD characterization

SMD devices only are subjected to preconditioning tosimulate board assembly techniques using the methodsdefined in standard J-STD-020C before being subjected tostresses.

Normally, the endpoint tests are related to the data sheet orto specified parameters. Additionally, they may include:

18357

AOQ p LAR 106

ppm( )⋅ ⋅=

p number of devices rejectedtotal number of devices tested--------------------------------------------------------------------------------=

LAR 1 number of lots rejectedtotal number of lots tested---------------------------------------------------------------------–=

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Quality InformationQuality Information Vishay Semiconductors

• Destructive physical analysis

• X-ray

• Delamination testing using scanning acoustic microscope

• Thermal imaging

• Thermal and electrical resistance analysis

A summary of the reliability test results combined withprocess flows and technological data will be prepared whenthe device has passed the Vishay qualification tests. Thesummary is named QualPack.

For Automotive grade devices also additional informationaccording to the PPAP requirements will be provided onrequest.

Example of the QualPack

Qualification procedure

Package

qualification

Device type

qualification

Monitoring Process change

qualification

Wafer process

qualification

18358

CNY17F

18551

Optocoupler

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Quality InformationVishay Semiconductors Quality Information

RELIABILITY MONITORING AND WEAR OUTThe monitoring program consists of short-term monitoring toprovide fast feedback on a regular basis in case of areduction in reliability and to measure the Early-life FailureRate (EFR). At the same time, Long-term monitoring is usedto determinate the Long-term steady-state Failure Rate(LFR). The tests used are a subset from those used forqualification and consist of:

• Life tests

• Humidity tests

• Temperature-cycling tests

The actual tests used depend on the product tested.Depending on the assembly volume a yearly monitoring andwear out test plan is created.Wear Out data are very important in Opto electronic device.

Fig. 4 - Bathtub Curve

The lifetime distribution curve is shown on figure 4. Thiscurve is also known as the 'bath-tub curve' because of itsshape. There are three basic sections:

• Early-life failures (infant mortality)

• Operating-life failures (random failures)

• Wear-out failures

Out of that data degradation curves can be made. Thesecurves show the long time behavior of the different devices.Some typical curves are attached in this report.

RELIABILITY PRINCIPLESReliability is the probability that a part works operated, underspecific conditions, performs properly for a given period oftime.

F(t) + R(t) = 1 or R(t) = 1 - F(t)

where:

R(t) = probability of survival

F(t) = probability of failure

F(t) = 1-e-λt

whereλ = instantaneous failure rate

t = time

thus,

R(t) = e-λt

MTTF, MTBFMTTF (mean time to failure) applies to parts that will bethrown away on failing. MTBF (mean time between failures)applies to parts or equipment that is going to be repaired.MTTF is the inverse failure rate.

So R(t) becomes to:

After a certain time, t will be equal to MTTF, R(t) becomes:

If a large number of units are considered, only 37 % of theiroperation times will be longer than MTTF figure.

The failure rate (λ) during the constant (random) failureperiod is determined from life-test data. The failure rate iscalculated from the formula:

where

λ = failure rate (h -1)

r = number of observed failures

fi = failure number

ti = time to defect

N = good sample size

t = entire operating time

C = number of components X h

The result is expressed in either

a) % per 1000 component hours by multiplying by 105

or in

b) FITs by multiplying by 109 (1 FIT = 10-9 h -1)

Example 1: Determination of failure rate λ500 devices were operated over a period of 2000 h (t) with:1 failure (f1) after 1000 h (t1)The failure rate of the given example can be calculated asfollows:

That means that this sample has an average failure rate of0.1 %/1000 h or 1001 FIT

Observed failure rates as measured above are for thespecific lot of devices tested. If the predicted failure rate forthe total population is required, statistical confidence factorshave to be applied.

Failure rate λ

Useful life

Early failure period

Constant failure rate period

Wear-out failure period21140

MTTF 1λ---=

R(t) eλt–

e

tMTTF-----------------–

= =

R(t) e1–

0.37= =

λ r

Σ fi ti⋅( ) N t⋅( )+------------------------------------------ r

C----= =

λ 11 1000 h⋅( ) 499 2000 h⋅+

----------------------------------------------------------------------=

λ 2 10-6

⋅ h-1=

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The confidence factors can be obtained from "chi square"(χ2) charts. Normally, these charts show the value of (χ2/2)rather than χ2. The failure rate is calculated by dividing theχ2/2 factor by the number of component hours.

The values for χ2/2 are given in table 1

Example 2: The failure rate of the populationUsing example 1 with a failure rate of 1001 FIT and 1 failure:χ2/2 at 60 % confidence is 2.02

This means that the failure rate of the population will notexceed 2022 FIT with a probability of 60 %.

• Accelerated Stress Testing

In order to be able to assure long operating life with areasonable confidence, VISHAY carries out acceleratedtesting on all its products. The normal accelerating factor isthe temperature of operation. Most failure mechanisms ofsemiconductors are dependent upon temperature. Thistemperature dependence is best described by the Arrheniusequation.

where

k = Boltzmann's constant 8.63 x 10-5 eV/KEA = activation energy (eV)T1 = operation temperature (K)T2 = stress temperature (K)λT1 = operation failure rateλT2 = stress-test failure rate

Using this equation, it is possible from the stress test resultsto predict what would happen in use at the normaltemperature of operation.

ACTIVATION ENERGYProvided the stress testing does not introduce a failuremode, which would not occur in practice, this method givesan acceptable method for predicting reliability using shorttest periods compared to the life of the device. It is necessaryto know the activation energy of the failure mode occurringduring the accelerated testing. This can be determined byexperiment. In practice, it is unusual to find a failure or if thereis, it is a random failure mode. For this reason an averageactivation energy is normally used for this calculation.Though activation energies can vary between 0.3 and 2.2eV, under the conditions of use, activation energies ofbetween 0.6 and 0.9 eV are used depending upon thetechnology.

Fig. 5 - Acceleration factor for different activation energies normalized to T = 55 °C

ACTIVATION ENERGIES FOR COMMON FAILURE MECHANISMSThe activation energies for some of the major semiconductorfailure mechanisms are given in the table below. These areestimates taken from published literature.

TABLE 1 - χ2/2 CHARTNUMBER OFFAILURES

CONFIDENCE LEVEL

60 % 90 %

0 0.92 2.31

1 2.02 3.89

2 3.08 5.30

3 4.17 6.70

4 5.24 8.00

5 6.25 9.25

6 7.27 10.55

λpopχ2

2⁄( )C

------------------=

λpop2.02

9.99 105

⋅-------------------------- 2022 FIT= =

λT2 λT1 e

EAk

-------- 1T1------- 1

T2-------–⎝ ⎠

⎛ ⎞×

×=

18362

1

10

100

1000

55 75 95 115 135 155

0.8 eV

0.7 eV

0.6 eV

0.5 eV

100 120 150

Acc

eler

atio

n F

acto

r

Temperature (°C)18361

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Failure rates are quoted at an operating temperature of 55 °Cand 60 % confidence using an activation energy (EA) of0.8 eV for optoelectronic devices.

Example 3: Conversion to 55 °CIn Example 2, the life test was out at 125 °C so to transformto an operating temperature of 55 °C.T1 = 273 + 55 = 328KT1 = 273 + 125 = 398KAcceleration factor =

thus

= 14 FIT(at 55 °C with a confidence of 60 %)

This figure can be re-calculated for any operating/junctiontemperature using this method.

• EFR (Early Life Failure Rate)

This is defined as the proportion of failures, which will occurduring the warranty period of the system for which they weredesigned. In order to standardize this period, VISHAY uses1000 operation hours as the reference period. This is thefigure also used by the automotive industry; it equates to oneyear in the life of an automobile. In order to estimate thisfigure, VISHAY normally operates a sample of devices for48 h or 168 h under the accelerated conditions detailedabove. The Arrhenius law is then used as before to calculatethe failure rate at 55 °C with a confidence level of 60 %. Thisfigure is multiplied by 1000 to give the failures in 1000 h andby 106 to give a failure in ppm. All EFR figures are quoted inppm (parts per million).The value of EFR and LFR is also depending on the amountof new products brought to market in the period. If a lot ofnew products are released the EFR and the LFR value canalso be increased in that period due to increased rejects.

• Climatic Tests Models

Temperature cycling failure rateThe inverse power law is used to model fatigue failures ofmaterials that are subjected to thermal cycling. For thepurpose of accelerated testing, this model relationship iscalled Coffin-Manson relationship, and can be expressed asfollows:

where:

AF = acceleration factorΔTuse = temp. range under normal operation

ΔTstress = temp. range under stress operation

M = constant characteristic of the failure mechanism.

For instance:

Relative Humidity failure rate

Moisture effect modeling is based upon theHoward-Pecht-Peck model using the acceleration factor ofthe equation shown below:

where:

RHstress = relative humidity during test

RHuse = relative humidity during operation

Tstress = temperature during test

Tuse = temperature during operation

EA = activation energy

k = Boltzmann constant

C = material constant

For instance:

RHstress = 85 %, RHuse = 92 %

Tstress = 85 °C, Tuse = 40 °C

TABLE 2 - ACTIVATION ENERGIES FOR COMMON FAILURE MECHANISM

FAILURE MECHANISM ACTIVATION ENERGY

Mechanical wire shorts 0.3 to 0.4

Diffusion and bulk defects 0.3 to 0.4

Oxide defects 0.3 to 0.4

Top-to-bottom metal short 0.5

Electro migration 0.4 to 1.2

Electrolytic corrosion 0.8 to 1.0

Gold-aluminum intermetallics 0.8 to 2.0

Gold-aluminum bond degradation 1.0 to 2.2

Ionic contamination 1.02

Alloy pitting 1.77

λ T2( )λ T1( )---------------

λ 423K( )λ 328K( )---------------------- 144= =

λ 328K( )

λ 423K( ) 144

---------------------- 2022144

-------------= =

TABLE 3 - COFFIN - MANSON EXPONENT FAILURE MECHANISM M

Al wire bond failure 3.5Intermetallic bond fracture 4.0Au wire bond heel crack 5.1

Chip-out bond failure 7.1

AF

ΔTstressΔTuse

--------------------------⎝ ⎠⎜ ⎟⎛ ⎞ M

=

ΔTuse 15 °C/60 °C 45 °C==

ΔTstress - 25 °C/100 °C 125 °C==

AF125 °C45 °C

------------------⎝ ⎠⎛ ⎞

321≈=

AF

RHstressRHuse

---------------------------⎝ ⎠⎜ ⎟⎛ ⎞ C

e

EAk

-------- 1Tuse-------------- 1

Tstress----------------------–⎝ ⎠

⎛ ⎞

⋅=

AF85 % RH92 % RH------------------------⎝ ⎠

⎛ ⎞3

x e

0.8

8.617 x 105–

------------------------------------ 1313---------- 1

358----------–⎝ ⎠

⎛ ⎞

=

AF 33≈

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Quality InformationQuality Information Vishay Semiconductors

This example shows how to transform test conditions intoenvironmental or into another test conditions. This equationis applicable for devices subjected to temperature humiditybias (THB) testing.Using these acceleration factors the useful lifetime can becalculated. Applying the acceleration factor once more,useful lifetime for the moisture effect model for partssubjected to THB can be estimated by the followingequation:

with:test hours = 1000hours per year = 8760

AF ≈ 118 (40 °C/60 % RH)

This means that operation in 40 °C/60 % RH environment isgood for around 13 years, calculated out of the 85 °C/85 % RH1000 h humidity stress test.

HANDLING FOR QUALITY• Electrostatic Discharge (ESD) Precautions

Electrostatic discharge is defined as the high voltage, whichis generated when two dissimilar materials move in contactwith one another. This may be by rubbing (e.g. walking on acarpet) or by hot air or gas passing over an insulated object.Sometimes, ESD is easily detectable as when a person isdischarged to ground.Electronic devices may be irreversibly damaged whensubjected to this discharge. They can also be damaged ifthey are charged to a high voltage and then discharged toground.Damage due to ESD may occur at any point in the processof manufacture and use of the device. ESD is a particularproblem if the humidity is low (< 40 %) which is very commonin non-humidified but air-conditioned buildings. ESD is notjust generated by the human body but can also occur withungrounded machinery.ESD may cause a device to fail immediately or damage adevice so that it will fail later. Whether this happens or not,usually depends on the energy available in the ESD pulse.

All ESD-sensitive VISHAY products are protected by meansof

• Protection structures on chip

• ESD protection measures during handling and shipping

VISHAY has laid down procedures, which detail the methodsto be used for protection against ESD. These measuresmeet or exceed the standards for ESD-protective andpreventative measures. These include the use of:

• Earthen wrist straps and benches

• Conductive floors

• Protective clothing

• Controlled humidity

It also lays down the methods for routinely checking theseand other items such as the earthen of machines.A semiconductor device is only completely protected whenenclosed in a "Faraday Cage". This is a completely closedconductive container (e.g., sealed conductive bag or box).Most packaging material (e.g. tubes) used forsemiconductors is now manufactured from anti-staticmaterial or anti-static-coated material. This does not meanthat the devices are completely protected from ESD, onlythat the packing will not generate ESD. Devices arecompletely protected only when surrounded on all sides by aconductive package.It should also be remembered that devices can equally aseasily be damaged by discharge from a high voltage toground as vice-versa.Testing for ESD resistance is part of the qualificationprocedure. The methods used are detailed in MIL-STD-883Method 3015.7 (Human Body Model) andEOS/ESD-S5.1-1993 (Machine Model) specification. Alsotesting according to the CDM (charged coupled devicemodel) is part of the advanced qualification procedure.

• Soldering

All products are tested to ascertain their ability to withstandthe industry standard soldering conditions after storage. Ingeneral, these conditions are as follows

• Wave soldering: double-wave soldering according to CECC00802 s.

• Reflow soldering: According to JEDEC STD 20C

Note: certain components may have limitations due to theirconstruction

• Dry pack

When being stored, certain types of device packages canabsorb moisture, which is released during the solderingoperations, thus causing damage to the device. Theso-called "popcorn" effect is such an example. To preventthis, Surface Mount Devices (SMD) are evaluated duringqualification, using a test consisting of moisture followed bysoldering simulation (pre-conditioning) and then subjected tovarious stress tests. In table 4 - Moisture Sensitivity Levels -the six different levels, the floor life conditions as well as thesoak requirements belonging to these levels are described.Any device, which is found to deteriorate under theseconditions, is packaged in "dry pack".The dry-packed devices are packed generally according toIPC JEDEC STD 33 "Handling, Packing, Shipping and use ofMoisture/Reflow sensitive Surface Mount Devices",IPC-SM-786 "Recommended Procedures for Handling ofMoisture Sensitive Plastic IC Packages".

Following some general recommend-dations:

• Shelf life in the packaging at < 40 °C and 90 % RH is12 months

• After opening, the devices should be handled according tothe specifications mentioned on the dry-pack label

Useful lifeYears

AF test hours⋅

hours per year--------------------------------------=

Useful lifeYears118 1000⋅

8760--------------------------- 13.5 years≈=

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• If the exposure or storage time is exceeded, the devicesshould be baked:

- Low-temperature baking - 192 h at 40 °C and 5 % RH- High-temperature backing - 24 h at 125 °C.

X=Default value of semiconductor manufacturer’s exposuretime (MET) between bake and bag plus the maximum timeallowed out of the bag at the distributor’s facility. The actualtimes may be used rather than the default times, but theymust be used if they exceed the default times.

Y = Floor life of package after it is removed from dry packbag.

Z = Total soak time for evaluation (X + Y).

Note: There are two possible floor lives and soak times inlevel 5. The correct floor life will be determined by themanufacturer and will be noted on the dry pack bag label perJEP 113. "Symbol and Labels for Moisture SensitiveDevices".

RELIABILITY AND STATISTICS GLOSSARYDefinitions

Accelerated Life Test: A life test under conditions those aremore severe than usual operating conditions. It is helpful, butnot necessary, that a relationship between test severity andthe probability distribution of life be ascertainable.

Acceleration Factor: Notation: f(t) = the time transformationfrom more severe test conditions to the usual conditions. Theacceleration factor is f(t)/t. The differential acceleration factoris df(t)/dt.

Acceptance Number: The largest numbers of defects thatcan occur in an acceptance sampling plan and still have thelot accepted.

Acceptance Sampling Plan: An accept/reject test thepurpose of which is to accept or reject a lot of items ormaterial based on random samples from the lot.

Assessment: A critical appraisal including qualitativejudgements about an item, such as importance of analysisresults, design criticality, and failure effect.

Attribute (inspection by): A term used to designate amethod of measurement whereby units are examined bynoting the presence (or absence) of some characteristic orattribute in each of the units in the group under considerationand by counting how many units do (or do not) possess it.Inspection by attributes can be two kinds: either the unit ofproduct is classified simply as defective or no defective or thenumber of defects in the unit of product is counted withrespect to a given requirement or set of requirements.

Attribute Testing: Testing to evaluate whether or not anitem possesses a specified attribute.

Auger Electron Spectrometer: An instrument, whichidentifies elements on the surface of a sample. It excites thearea of interest with an electron beam and observes theresultant emitted Auger electrons.These electrons have the specific characteristics of the nearsurface elements. It is usually used to identify very thin films,often surface contaminants.

Availability (operational readiness): The probability that atany point in time the system is either operating satisfactorilyor ready to be placed in operation on demand when usedunder stated conditions.

Average Outgoing Quality (AOQ): The average quality ofoutgoing product after 100 % inspection of rejected lot, withreplacement by good units of all defective units found ininspection.

Bathtub Curve: A plot of failure rate of an item (whetherrepairable or not) vs. time. The failure rate initially decreases,then stays reasonably constant, then begins to rise ratherrapidly. It has the shape of bathtub. Not all items have thisbehavior.

Bias: (1) The difference between the s-expected value of anestimator and the value of the true parameter; (2) Appliedvoltage.

Burn-in: The initial operation of an item to stabilize itscharacteristics and to minimize infant mortality in the field.

Confidence Interval: The interval within which it is assertedthat the parameters of a probability distribution lies.

Confidence Level: Equals 1 - α where α = the risk (%).

TABLE 4 - MOISTURE SENSITIVITY LEVELSFLOOR LIFE SOAK REQUIREMENTS

LEVEL CONDITIONS TIME TIME (h) CONDITIONS

1 ≤ 30 °C/90 % RH Unlimited 168 85 °C/85% RH

2 ≤ 30 °C/60 % RH 1 year 168 85 °C/60% RH

2a ≤ 30 °C/60 % RH 4 weeks 696 30 °C/60% RH

X Y Z

3 ≤ 30 °C/60 % RH 168 h 24 168 192 30 °C/60% RH

4 ≤ 30 °C/60 % RH 72 h 24 72 96 30 °C/60% RH

5 ≤ 30 °C/60 % RH 48 h 24 48 72 30 °C/60% RH

5a ≤ 30 °C/60 % RH 24 h 24 24 48 30 °C/60% RH

6 ≤ 30 °C/60 % RH 6 h 0 6 6 30 °C/60% RH

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Corrective Action: A documented design, process,procedure, or materials change to correct the true cause of afailure. Part replacement with a like item does not constituteappropriate corrective action. Rather, the action shouldmake it impossible for that failure to happen again.

Cumulative Distribution Function (CDF): The probabilitythat the random variable takes on any value less than orequal to a value x, e.g. F(x) = CDF (x) = Pr (x ≤ X).

Defect: A deviation of an item from some ideal state. Theideal state usually is given in a formal specification.

Degradation: A gradual deterioration in performance as afunction of time.

Derating: The intentional reduction of stress/strength ratio inthe application of an item, usually for the purpose of reducingthe occurrence of stress-related failures.

Duty Cycle: A specified operating time of an item, followedby a specified time of no operation.

Early Failure Rate: That period of life, after final assembly,in which failures occur at an initially high rate because of thepresence of defective parts and workmanship. This definitionapplies to the first part of the bathtub curve for failure rate(infant mortality).

EDX Spectrometer: Generally used with a scanningelectron microscope (SEM) to provide elemental analysis ofX-rays generated on the region being hit by the primaryelectron beam.

Effectiveness: The capability of the system or device toperform its function.

EOS - Electrical Overstress: The electrical stressing ofelectronic components beyond specifications. May becaused by ESD.

ESD - Electrostatic Discharge: The transfer of electrostaticcharge between bodies at different electrostatic potentialscaused by direct contact or induced by an electrostatic field.Many electronic components are sensitive to ESD and will bedegraded or fail.

Expected Value: A statistical term. If x is a random variableand F(x) it its CDF, the E(x) = xdF(x), where the integrationis over all x. For continuous variables with a pdf, this reducesto E(x) = ∫ pfd(x) dx. For discrete random variables with a pdf,this reduces to E(x) = Σxnp(xn) where the sum is over all n.

Exponential Distribution: A 1-parameter distribution(λ > 0, t ≥ 0) with: pdf (t) = λexp (-λt);Cdf(t) 0 1 - exp (-λt); Sf(t) = exp(-λt);failure rate = λ; mean time-to-failure = 1/λ. This is theconstant failure-rate-distribution.

Failure: The termination of the ability of an item to performits required function.

Failure Analysis: The identification of the failure mode, thefailure mechanism, and the cause (e.g., defective soldering,design weakness, contamination, assembly techniques,etc.). Often includes physical dissection.

Failure, Catastrophic: A sudden change in the operatingcharacteristics of an item resulting in a complete loss ofuseful performance of the item.

Failure, Degradation: A failure that occurs as a result of agradual or partial change in the operating characteristics ofan item.

Failure, Initial: The first failure to occur in use.

Failure, Latent: A malfunction that occurs as a result of aprevious exposure to a condition that did not result in animmediately detectable failure. Example: Latent ESD failure.

Failure Mechanism: The mechanical, chemical, or otherprocess that results in a failure.

Failure Mode: The effect by which a failure is observed.Generally, describes the way the failure occurs and tells"how" with respect to operation.

Failure Rate: (A) The conditional probability density that theitem will fail just after time t, given the item has not failed upto time t; (B) The number of failures of an item per unitmeasure of life (cycles, time, miles, events, etc.) asapplicable for the item.

Failure, Wearout: Any failure for which time of occurrence isgoverned by rapidly increasing failure rate.

FIT: Failure Unit; (also, Failures In Time) Failures per 109 h.

Functional Failure: A failure whereby a device does notperform its intended function when the inputs or controls arecorrect.

Gaussian Distribution: A 2-parameter distribution with:

Cdf(x) = guaf(x). SF(x) = gaufc(x). "Mean value of x" u,"standard deviation of x" = σ

Hazard Rate: Instantaneous failure rate.

Hypothesis, Null: A hypothesis stating that there is nodifference between some characteristics of the parentpopulations of several different samples, e.g., that thesamples came from similar populations.

Infant Mortality: Premature catastrophic failures occurringat a much greater rate than during the period of useful lifeprior to the onset of substantial wear out.

Inspection: The examination and testing of supplies andservices (including when appropriate, raw materials,components, and intermediate assemblies) to determinewhether they conform to specified requirements.

Inspection by Attributes: Inspection whereby either theunit of product or characteristics thereof is classified simplyas defective or no defective or the number of defects in theunit of product is counted with respect to a givenrequirement.

Life Test: A test, usually of several items, made for thepurpose of estimating some characteristic(s) of theprobability distribution of life.

Lot: A group of units from a particular device type submittedeach time for inspection and/or testing is called the lot.

Lot Reject Rate (LRR): The lot reject rate is the percentageof lots rejected form the lots evaluated.

pdf (x) 1

2πσ------------- e

12---– x u–

σ------------⎝ ⎠

⎛ ⎞ 2

⋅=

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Lot Tolerance Percent Defective (LTPD): The percentdefective, which is to be, accepted a minimum or arbitraryfraction of the time, or that percent defective whoseprobability of rejection is designated by β.

Mean: (A) The arithmetic mean, the expected value; (B) Asspecifically modified and defined, e.g., harmonic mean(reciprocals), geometric mean (a product), logarithmic mean(logs).

Mean Life: R(t)dt; where R(t) = the s-reliability of the item;t = the interval over which the mean life is desired, usually theuseful life (longevity).

Mean-Life-Between-Failures: The concept is the same asmean life except that it is for repaired items and is the meanup-time of the item. The formula is the same as for mean lifeexcept that R(t) is interpreted as the distribution of up-times.Mean-Time-Between-Failures (MTBF): For a particularinterval, the total functioning life of a population of an itemdivided by the total number of failures within the populationduring the measurement interval. The definition holds fortime, cycles, miles, events, or other measure of life units.

Mean-Time-To-Failure (MTTF): See "Mean Life".

Mean-Time-To-Repair (MTTR): The total correctivemaintenance time divided by the total number of correctivemaintenance actions during a given period of time.

MTTR: = G(t)dt; where G(t) = Cdf of repair time; T-maximumallowed repair time, e.g., item is treated as no repairable at thisechelon and is discarded or sent to a higher echelon for repair.

Operating Characteristic (OC) Curve: A curve showing therelation between the probability of acceptance and either lotquality or process quality, whichever is applicable.

Part Per Million (PPM): PPM is arrived at by multiplying thepercentage defective by 10000.Example: 0.1 % = 1000 ppm.

Population: The totality of the set of items, units,measurements, etc., real or conceptual that is underconsideration.

Probability Distribution: A mathematical function withspecific properties, which describes the probability that arandom variable will take on a value or set of values. If therandom variable is continuous and well behaved enough,there will be a pdf. If the random variable is discrete, therewill be a pmf.

Qualification: The entire process by which products areobtained from manufacturers or distributors, examined andtested, and then identified on a Qualified Product List.

Quality: A property, which refers to, the tendency of an itemto be made to specific specifications and/or the customer’sexpress needs. See current publications by Juran, Deming,Crosby, et al.

Quality Assurance: A system of activities that providesassurance that the overall quality control job is, in fact, beingdone effectively. The system involves a continuingevaluation of the adequacy and effectiveness of the overallquality control program with a view to having correctivemeasures initiated where necessary. For a specific product

or service, this involves verifications, audits, and theevaluation of the quality factors that affect the specification,production inspection, and use of the product or service.

Quality Characteristics: Those properties of an item orprocess, which can be measured, reviewed, or observed andwhich are identified in the drawings, specifications, orcontractual requirements. Reliability becomes a qualitycharacteristic when so defined.

Quality Control (QC): The overall system of activities thatprovides a quality of product or service, which meets theneeds of users; also, the use of such a system.

Random Samples: As commonly used in acceptancesampling theory, the process of selecting sample units insuch a manner that all units under consideration have thesame probability of being selected.

Reliability: The probability that a device will function withoutfailure over a specified time period or amount of usage atstated conditions.

Reliability Growth: Reliability growth is the effort, theresource commitment, to improve design, purchasing,production, and inspection procedures to improve thereliability of a design.

Risk:α : The probability of rejecting the null hypothesis falsely.

Scanning Electron Microscope (SEM): An instrument,which provides a visual image of the surface features of anitem. It scans an electron beam over the surface of a samplewhile held in a vacuum and collects any of several resultantparticles or energies. The SEM provides depth of field andresolution significantly exceeding light microscopy and maybe used at magnifications exceeding 50000 times.

Screening Test: A test or combination of tests intended toremove unsatisfactory items or those likely to exhibit earlyfailures.

Significance: Results that show deviations betweenhypothesis and the observations used as a test of thehypothesis, greater than can be explained by randomvariation or chance alone, are called statistically significant.

Significance Level: The probability that, if the hypothesisunder test were true, a sample test statistic would be as badas or worse than the observed test statistic.

SPC: Statistical Process Control.

Storage Life (shelf life): The length of time an item can bestored under specified conditions and still meet specifiedrequirements.

Stress: A general and ambiguous term used as an extensionof its meaning in mechanics as that which could causefailure. It does not distinguish between those things whichcause permanent damage (deterioration) and those things,which do not (in the absence of failure).

Variance: The average of the squares of the deviations ofindividual measurements from their average. It is a measureof dispersion of a random variable or of data.

Wearout: The process of attribution which results in anincrease of hazard rate with increasing age (cycles, time,miles, events, etc.) as applicable for the item.

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Document Number: 80119 For technical questions, contact: [email protected] www.vishay.comRev. 1.5, 12-Mar-08 113

Quality InformationQuality Information Vishay Semiconductors

ABBREVIATIONSAQL Acceptable quality level

AOQ Average outgoing quality

CAR Corrective action report/request

DIP Dual in-line package

ECAP Electronic circuit analysis program

EFR Early failure rate

EMC Electro magnetic compatibility

EMI Electro magnetic interference

EOS Electrical overstress

ESD Electrostatic discharge

FAR Failure analysis report/request

FIT (Failure in time) failure unit; failures/109 h

FMEA Failure mode and effects analysis

FTA Fault tree analysis

h(t) Hazard rate

LFR Longterm failure rate

LTPD Lot tolerance percent defective

MOS Metal oxide semiconductor

MRB Material review board

MTBF Mean-time-between-failures

MTTF Mean-time-to-failure

MTTR Mean-time-to-repair

PPM Parts per million

PRST Probability ratio sequential test

QA Quality assurance

QC Quality control

QPL Qualified products list

RPM Reliability planning and management

SCA Sneak circuit analysis

SEM Scanning electron microscope

TW Wearout time

Z(t) Hazard rate

λ Failure rate (lambda)

Page 129: Bundle (1)

Document Number: 80057 For technical questions, contact: [email protected] www.vishay.comRev. 1.4, 10-Sep-07 1

Conventions used in Presenting Technical Data

Conventions used in Presenting TechnicalVishay Semiconductors

NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRONThe type number of semiconductor devices consists of twoletters followed by a serial number.For example:

The first letter indicates the material used for the active partof the device.

A GERMANIUM(Materials with a band gap 0.6 to 1.0 eV) (1)

B SILICON2)

(Materials with a band gap 1.0 to 1.3 eV) (1)

C GALLIUM-ARSENIDE (2)

(Materials with a band gap > 1.3 eV) (1)

R COMPOUND MATERIALS (For instance cadmium-sulfide)

The second letter indicates the circuit function:

A DIODE: detection, switching, mixer

B DIODE: variable capacitance

C TRANSISTOR: low power, audio frequency

D TRANSISTOR: power, audio frequency

E DIODE: tunnel

F TRANSISTOR: low power, high frequency

G DIODE: oscillator, miscellaneous

H DIODE: magnetic sensitive

K HALL EFFECT DEVICE: in an open magnetic circuit

L TRANSISTOR: power, high frequency

M HALL EFFECT DEVICE: in a closed magnetic circuit

N PHOTO COUPLER2)

I DIODE: radiation sensitive (2)

Q DIODE: radiation generating

R THYRISTOR: low power

S TRANSISTOR: low power, switching

T THYRISTOR: power

U TRANSISTOR: power, switching

X DIODE: multiplier, e.g. varactor, step recovery

Y DIODE: rectifying, booster

Z DIODE: voltage reference or voltage regulator, transientsuppressor diode

The serial number consists of:

• Three figures, running from 100 to 999, for devicesprimarily intended for consumer equipment

• One letter (Z, Y, X, etc.) and two figures, running from 10to 99, for devices primarily intended for professionalequipment

A version letter can be used to indicate a deviation of a singlecharacteristic, either electrically or mechanically.The letter never has a fixed meaning, the only exceptionbeing the letter R, indicating reversed voltage, i.e. collectorto case.

Notes(1) The materials mentioned are examples(2) Used for optoelectronic products

Material Function Serial number

C N Y17

17182

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Conventions used in Presenting Technical DataVishay Semiconductors Conventions used in Presenting

Technical Data

TYPE DESIGNATION CODE FOR OPTOCOUPLERSOptocouplers

GENERAL OPTOCOUPLER NOMENCLATURE FOR BRT, IL, AND SFH SERIES

T C

VishaySemiconductor

Case varietiesD = Dual inline 6 pinE = DIL 4 Pin multipleM = SMD package

Number ofcoupler systems1 = 1 system2 = 2 systems3 = 3 systems

4 = 4 systems

Main type G = leadform

CTR selection0 ≥ 20 % (1)

1 = 40 to 80 %2 = 63 to 125 %3 = 100 to 200 %

4 = 160 to 320 %5 = 50 to 150 %6 = 100 to 300 %7 = 80 to 160 %8 = 130 to 260 %9 = 200 to 400 %

If "T/D" on 4. positionPin connection:0 = Base connected1 = W/O base6 = AC ± input

OutputD = DarlingtonT = Transistor

Coupler

17183Note(1) Widest range, consult data sheet for details

18482

S F H 6 1 5 A - 3 X 0 9 T

Prefix Base Part Number CTR Ranges Options Definition Tape andReel Option

BRTIlILDILQSFH6VO

1 = 40 % to 80 %2 = 63 % to 125 %3 = 100 % to 200 %4 = 160 % to 320 %5 = or 50 % to 150 % (1)

6 = 100 % to 300 % (1)

7 = 80 % to 160 % (1)

8 = 130 % to 260 % (1)

9 = 200 % to 400 % (1)

250 % to 500 %

Option 1 Optocouplers for safe electr icalInsulation per DIN VDE 0884

Option 6 Optocouplers with 10.16 mm (0.4")through hole lead spread

Option 7 Optocouplers with SMD lead form bend,0.9 mm maximum standoff height

Option 8 Optocouplers with 10.16 mm (0.4") SMDlead form bend

Option 9 Optocouplers with SMD lead form bend,0.25 mm maximum standoff height

Option 1 may be combined with the otherlead forming options.

Option T may only be combined withOptions 7, 8, and 9

CNY17F-2X017T4N35-X016SFH615-3X001VO615A-9X007T

Examples:

Note (1) Used on selected products, consult data sheet for details

0

Page 131: Bundle (1)

Document Number: 83718 For technical questions, contact: [email protected] www.vishay.comRev. 1.5, 11-Feb-11 1

Manufacturing and Reliability

Manufacturing and ReliabilityVishay Semiconductors

THE IMPORTANCE OF OPTOCOUPLERRELIABILITYBecause of the widespread use of optocouplers as aninterface device, optocoupler reliability has been of majorimportance to circuit designers and component engineers.Published studies of comparative tests have indicated a lackof manufacturing consistency with individual manufacturers,as well as from manufacturer to manufacturer. This hasresulted in user uncertainty about designing withoptocouplers; however, these devices often offer the bettercircuit solution.This application note is intended to demonstrate Vishay’sconcern, efforts, and results in addressing thesemanufacturing issues to assure users of the quality(out-going) and reliability (long-term) of our opto-isolatedproducts. First, aspects of optocoupler characteristics arediscussed along with the measures Vishay has taken toassure their quality and reliability. Second, the reliabilitytests used to approximate worst-case conditions and thelatest results of these tests are described

OPTOCOUPLER OUTPUT There are a variety of outputs available in optocouplers. Astandard bipolar phototransistor is the most common. Theyare available with different ratings to fit most applications,including versions without access to the base of thetransistor to reduce noise transmission. Darlingtontransistor outputs offer high gain with reduced input currentrequirements, but typically trade off speed. Logicoptocouplers provide speed but trade off working voltagerange. Logic couplers are normally only used in datatransmission applications. Silicon controlled rectifier (SCR)devices allow control of much higher voltages and typicallyare applied to control AC loads. They are also offered ininverse-parallel (anti-parallel) SCR (TRIAC) configurations sothat both cycles of an AC sinusoid can be switched. InVishay’s manufacturing flow, all these devices are 100 %monitored at a high-temperature hot rail (see figure 1) toeliminate potential failures due to marginal die attaches andlead bends, resulting in a more reliable product. Vishayoffers all the above types of products.In optocouplers, especially the transistor, the slow changeover several days in the electrical parameters when voltageis applied is termed the field effect. This process is extremeparticularly at high temperatures (100 °C) and with a high DCvoltage (1 kV). Changes in the electrical parameters of thesilicon phototransistor can occur due to the release ofcharge carriers. In this way, a similar effect as takes place ina MOS transistor (inversion at the surface) is caused by thestrong electrical field. This may result in changes in the gain,the reverse current, and the reverse voltage. In this case, thedirection of the electrical field is a decisive factor.In Vishay's optocouplers, the pn junctions of the siliconphototransistor are protected by a transparent ion screenfrom influences of the electrical field. In this way, changes ofelectrical parameters by the electrical field are limited to anextremely low value or do not occur at all.

OPTOCOUPLER INPUT The area of greatest concern in optocoupler reliability hasbeen the infrared LED. The decrease in LED light outputpower over current flow time has been the object ofconsiderable attention in order to reduce its effects. (Circuitdesigns which have not included allowances for parametricchanges with temperature, input current, phototransistorbias, etc. have been attributed to LED degradation. Toinsure reliable system operation over time, the variation ofthe circuit from data sheet conditions must be considered).Vishay has focused on the infrared LED to improve CTRdegradation and consequently achieved a significantimprovement in coupler reliability. The improvements haveincluded die geometry to improve coupling efficiency,metallization techniques to increase die shear strength andto increase yields while reducing user cost, and junctioncoating techniques to protect against mechanical stresses,thus stabilizing long-term output.

CURRENT TRANSFER RATIO The current transfer ratio (CTR) is the amount of outputcurrent derived from the amount of input current. CTR isnormally expressed as a percent. For example, if 10 mA ofinput current is applied to the input (LED) and 10 mA ofcollector current is obtained, then the CTR is 100, or 100 %.CTR is affected by a variety of influences, including LEDoutput power, hFE of the transistor, temperature, diodecurrent, and device geometry. If all these factors remainconstant, the principle cause of CTR degradation is thedegradation of the input LED. As mentioned earlier, Vishay has made tremendousprogress in manufacturing techniques to reduce CTRdegradation. Vishay's manufacturing techniques maximizecoupling efficiency, which realizes high transfer ratios andlow input current requirements. Additionally, this allows alarge variety of standard CTR values, and the capability ofspecial selection in production volumes.

ISOLATION BREAKDOWN VOLTAGE Isolation voltage is the maximum voltage which may beapplied across the input and output of the device withoutbreaking down. This breakdown will not normally occurinside the package between the LED and the transistor, butrather on the boundary surfaces across which partialdischarges can occur. Vishay uses a double moldmanufacturing technique where the LED and transistor areencapsulated in an infrared transparent inner mold. The nextstep in the process is an epoxy over mold. The double-moldtechnique lengthens the leakage path for high-voltagedischarges appreciably, allowing the device to achieve veryhigh isolation voltages. All of Vishay's optocouplers are builtusing UL-approved processes. A standard line ofVDE-approved optocouplers is also available in the AgencyTable section.

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Manufacturing and ReliabilityVishay Semiconductors Manufacturing and Reliability

COLLECTOR-TO-EMITTER BREAKDOWNVOLTAGE Collector-emitter breakdown voltage (BVCEO) can bethought of as a transistor's working voltage. Whenconsidering the application, the selection should be made toinclude a safety margin to insure the device is off when it issupposed to be off. Vishay transistor technology in waferprocessing offers a variety of BVCEO devices. Each isparametrically tested to insure proper operation (see figure1).

BLOCKING VOLTAGE Blocking voltage (VDRM, expressed in peak value) is usedwhen describing the working voltage for SCR or TRIAC typedevices. Vishay offers products through 800 V of blockingcapability.

DV/DT RATING dV/dt, an important safety specification, describes a TRIACtype device's capability to withstand a rapidly rising voltagewithout turning on or false firing. Vishay's TRIAC typedevices have the highest available dV/dt rating offered onthe market. Vishay's manufacturing process yields a10 000 V/μs dV/dt rating. This rating eliminates the need forsnubber (RC) networks which negatively affect loadssensitive to leakage currents, while reducing componentcount for circuit implementation and cost. An example ofsuch a load would be neon indicator lamps. Vishay's TRIACtype devices also carry a load current rating three times theindustry standard. This 300 mA current capability allows thedevice to drive most AC loads without the need for afollow-on TRIAC or interposing an electromechanical relay.Vishay manufactures this device with or withoutzero-crossing detector logic.

QUALITY AND RELIABILITY TESTS The tests in figure 1 were performed on Vishayoptocouplers. The tests allow early detection of weak pointsand provide information regarding the reliabilitycharacteristics of the component.From the life test information, assumptions of useful lifeexpectancy can be obtained. All quality and reliability testsare performed in conditions that either exceed or areequivalent to the limits defined in our data sheets.International standards are also considered. Assuming thatno additional failure mechanisms are created by the stressconditions, the results of the stress test will correlate toconditions in the field and can be used to estimate usefullifetime. The environmental stress tests ensure Vishay’smanufacturing capabilities will provide package integrity inthe most rigorous conditions. The life test results highlightour ability in packaging and electrical performance toachieve MTTF hours which meet or exceed the highestindustry standards for the semiconductor.

PACKAGE INTEGRITY Although packaged in standard IC configurations,optocouplers have some unique package considerations.The use of two-chip and internal-light-transfer mediumsrequire careful selection of materials to insure compatibilityunder a variety of operating conditions. In addition to thehigh isolation voltages achieved by Vishay optocouplers,our devices are tested to assure high levels of mechanicalintegrity and moisture resistance.

TABLE 1 - RELIABILITY REQUIREMENTS FOR OPTOCOUPLER ENVIRONMENTAL TESTS

TESTAPPLICABLEREFERENCE

TEST CONDITIONS

Thermal climatic IEC 60068 TC = - 55 °C to + 150 °C,(see datasheet)

Solderability J-STD-002B 245 °C/3 s SMD lead (Pb)-free

TABLE 2 - LIFE TESTS

TESTTEST CONDITIONS

TEMP. (°C) RH (%) BIAS TIME (h)

Electrical life test Tj max. < 60Derated

max. rating

1000

Temp/humidity life 85 85 0 1000

High temperaturereverse bias

Accordingdata sheet < 60

80 % of max.

voltage rating

1000

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Manufacturing and ReliabilityManufacturing and Reliability Vishay Semiconductors

PACKAGE DENSITY Board space has become increasingly important in theelectronic industry. Vishay uses a plate molding techniqueto achieve reduction in cost, allowing us to offer a wideselection of packages. These consist of single-channeloptocouplers in 4, 6, 8, and 16 pin packages, dual-channeldevices in 8 pin DIP or SMD packages, and quad-channeldevices in 16 pin DIP packages. The above devices areavailable in two surface mount lead configurations, as well

as the standard through-hole lead. Vishay also has astandard single- and dual-channel optocoupler in anSOIC-8 package. The dual SOIC-8 package has the highestpackaging density of any high-volume standardoptocoupler available. All of these packages have beendesigned and tested to meet the highest quality andreliability expectations of the semiconductor industry.

Fig. 1 - Coupler Process Flow and Inspections

Operation

Inspection or test

Thermosonic wirebonding

High temp.conductive epoxy

DA Cure

Junctioncoat

Frame cut,coding

Innermold

QA Store

Postcure

Coupling

Postcure

Outermold

LeadfinishBlast Blast

Mark

Hotrail

(opt.)

Tempcycle(opt.)

Hi pot

Pack

Singulate

LBmonitor

DAmonitor

Couplingmonitor

Para-metric

Detector dieeutectic DA orAG epoxy DA

Emitter di eeutectic or

AG Epoxy DA

Package

Packagevisual

17934

visual

Page 134: Bundle (1)

Packaging, Tape and Reel Informationwww.vishay.com Vishay Semiconductors

Rev. 2.2, 06-Oct-11 1 Document Number: 83714

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Packaging, Tape and Reel Information

DESCRIPTIONOptocouplers are available in plastic dual-in-line packages(DIP), SOP packages, and in a surface-mount, gull-wing,lead bend configuration. Optocouplers purchased in theDIP configuration are shipped in tubes. Optocouplerspurchased in a gull-wing configuration can be shipped intubes or on carrier tape. This section provides stickspecifications, tape and reel specifications, and componentinformation.

TUBE SPECIFICATIONSFigure 1 shows the physical dimensions of transparent,antistatic, plastic shipping tubes. Figure 2 shows tube safetyagency labeling and orientation information.

The following table lists the number of parts per tube.

Fig. 1 - Shipping Tube Specifications for DIP Packages

DEVICES PER TUBSTYPE UNITS/TUBE TUBES/BOX UNITS/BOX

DIP-16 25 40 1000

DIP-4 100 40 4000

DIP-6 50 40 2000

DIP-8 50 40 2000

HV, CNY64 40 50 2000

HV, CNY65 30 35 1050

HV, CNY66 25 35 875

MADE IN MALAYSIAANTISTATIC

Detail A

200 ± 0.5

125 ± 0.5

150 ± 0.5

Detail B

Detail A Detail B10°

Section A - B

B

R0.1

R 0.5

14 x

// 0.2 B

13 x 10 = 130

A

B

– 1.0

Not to scale

Transparent rigid PVC

A

Dimensions in millimeters

17996

OPTOSEMICONDUCTOR VISHAY

260 ± 0.5

330 ± 0.5

528 ± 0.2

30 ± 0.5

0.7 ± 0.5

3 ± 0.5380 ± 1

12 ± 0.3

6.6 ± 0.3

4.4 ± 0.3

5.7 ± 0.15

11 ± 0.3

0.6 ± 0.1

2.7 ± 0.2

– 1.0

1.0

– 1.0

– 1.0

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Packaging, Tape and Reel Informationwww.vishay.com Vishay Semiconductors

Rev. 2.2, 06-Oct-11 2 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 2 - Shipping Tube Specifications for SOP Packages

TUBE SPECIFICATIONS FOR DIP AND HIGH ISOLATION VOLTAGE PACKAGES

Fig. 3 - DIP-6 N, G Fig. 4 - DIP-4, -2, -16 N, G

Side viewscale: 4X

Top viewnot to scale

4 (100)

0.312 ref.(7.8 ref.)

Dimensions in inches (millimeters)

17997

OPTOSEMICONDUCTOR ANTISTATICVISHAY

0.46 ± 0.01(11.5 ± 0.25)0.344 ± 0.01(8.6 ± 0.25)

0.058 ± 0.008(1.46 ± 0.19)

0.03 ± 0.005(0.7 ± 0.13)

0.104 ± 0.01(2.6 ± 0.25)

0.03 ± 0.01(0.7 ± 0.25)

22.4 ± 0.04

(558.8 ± 1)

15912 15915

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Rev. 2.2, 06-Oct-11 3 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - CNY64

Fig. 6 - CNY65, 66

TAPE AND REEL SPECIFICATIONSSurface-mounted devices are packaged in embossed tapeand wound onto 13" molded plastic reels for shipment, tocomply with Electronics Industries Association StandardEIA-481, revision A, and International ElectrotechnicalCommission standard IEC 60286.

Leaders and Trailers

The carrier tape and cover tape are not spliced. Both tapesare one single uninterrupted piece from end to end, asshown in figure 2. Both ends of the tape have empty pocketsmeeting these requirements.

• Trailer end (inside hub of reel) is 200 mm minimum

• Leader end (outside of reel) is 400 mm minimum and560 mm maximum

• Unfilled leader and trailer pockets are sealed

• Leaders and trailers are taped to tape and hub,respectively, with masking tape

• All materials are static-dissipative

Fig. 7 - Tape and Reel Shipping Medium

REELS• As shown in figure 4, all reels contain standard areas for

the placement of ESD stickers and labels. Each reel alsohas a tape slot in its core. The overall reel dimension is13". Reels contain 1000 6 or 8 pin gullwing parts andcould have up to three inspection lots

Fig. 8 - Tape and Reel Shipping Medium

15913

15914

Top cover tape

EmbossmentEmbossed carrier

17998

ESD sticker

Tape slotin core

13"

Regular, specialor bar code label

17999

Page 137: Bundle (1)

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Rev. 2.2, 06-Oct-11 4 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE AND REEL PACKAGING FOR SINGLE CHANNEL SOIC8 OPTOCOUPLERSDimensions in millimeters (inches)

Selected SOIC8 optocouplers are available in tape and reelformat. To order surface mount IL2XXA optocoupler on tapeand reel, add a suffix “T” after the part number, i.e., IL207AT.

The tape is 12 mm wide on a 33 cm reel. There are2000 parts per reel. Taped and reeled SOIC8-Aoptocouplers conform to EIA-481-2 and IEC 60286-3.

Fig. 9

TAPE ANR REEL PACKAGING FOR DUAL CHANNEL (1) SOIC8 OPTOCOUPLERSDimensions in millimeters (inches)

Selected dual SOIC8 optocouplers are available in tape andreel format. To order surface mount ILD2XX optocoupler ontape and reel, add a suffix “T” after the part number, i.e.,ILD207T.

The tape is 16 mm and is wound on a 33 cm reel. There are2000 parts per reel. Taped and reeled dual SOIC8optocouplers conform to EIA-481-2 and IEC 60286-3.

Note(1) Select dual channel devices are available in the shorter SOIC-8

package and will be taped according to the single channeltaping specification

Fig. 10

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.

1.5 (0.059)

1.75 ± 0.1(0.069 ± 0.004)

Pin 1 and top of component

Topcovertape

0.1 (0.004) max.

12.0 ± 0.3(0.472 ± 0.012)

18003

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

8.0 ± 0.1 (0.315 ± 0.004)

3.78 (0.149)

0.35 (0.014)

9.2 (0.36)

6.4 (0.252)

5.25(0.205)

5.5 (0.216)

1.5 (0.059)

1.75 ± 0.1(0.069 ± 0.004)

13.3 (0.523)

0.3 (0.012) max.

0.1 (0.004) max.

16.0 ± 0.3(0.630 ± 0.012)

18004

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

6.6 (0.26)

6.35 (0.25)

8.0 (0.315)

7.5 ± 0.05(0.300 ± 0.002)

3.8 (0.15)

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.Pin 1 and top of component

Topcovertape

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Rev. 2.2, 06-Oct-11 5 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR SMD-4 OPTOCOUPLERS WITH OPTION 7Dimensions in millimeters

Selected 4 pin optocouplers are available in tape and reelformat. To order a 4 pin optocoupler with option 7 on tapeand reel, add a suffix “T” after the part number,SFH615A-3X007T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 4 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 11

TAPE ANR REEL PACKAGING FOR SMD-4 OPTOCOUPLERS WITH OPTION 9Dimensions in millimeters

Selected 4 pin optocouplers are available in tape and reelformat. To order any SFH6xx6 optocoupler on tape and reel,add suffix “T” after the part number, i.e., SFH6156-3T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 4 pin optocouplersconform to EIA-481-2 and IEC60286-3.

Fig. 12

2 ± 0.1

4 ± 0.11.5 + 0.1

1.75 ± 0.1

16 ± 0.3

7.5 ± 0.1

1.5 + 0.25010.41 ± 0.112 ± 0.1

5.05 ± 0.15.05 ± 0.1

0.35 ± 0.05

Typ.

R 0.763.71 ± 0.1

4.67 ± 0.1

6.51

21579

10 pitch cumulative tolerance on tape ± 0.2

XX

Section X-X

Ø 1.5

13.3

4.07

0.3 max.

0.1 max.

16 ± 0.3

18005

4 ± 0.1

2 ± 0.05

10.2

5.05

12

7.5 ± 0.05

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2

1.5 min.Pin 1 and top of component

Topcovertape

1.75 ± 0.1

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Rev. 2.2, 06-Oct-11 6 Document Number: 83714

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR SMD-4 OPTOCOUPLERS WITH OPTION 9, 90° ROTATIONDimensions in millimeters (inches)

Selected 4 pin optocouplers are available in tape and reelformat. To order any SFH6xx series optocoupler on tapeand reel with this orientation, add suffix “T1” after the partnumber, i.e., SFH6156-5T1.

The tape is 16 mm and is wound on a 33 cm reel. There are2000 parts per reel. Taped and reeled 4 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 13

TAPE ANR REEL PACKAGING FOR SMD-4 OPTOCOUPLERS WITH OPTION 8Dimensions in millimeters

Selected 4 pin optocouplers are available in tape and reelformat. To order any SFH6xx series optocoupler on tapeand reel, add suffix “T” after the part number, i.e.,SFH615A-4X018T.

The tape is 24 mm and is wound on a 33 cm reel. There are2000 parts per reel. Taped and reeled 4 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 14

16 ± 0.3 (0.630 ± 0.012)

16.00 + 0.30, -0.10 (0.013 (0.0008), -0.0004)

18401

4 ± 0.1(0.157 ± 0.004) 1.5 + 0.10, - 0.00

(0.59 ± 0.004)

1.75 ± 0.1(0.069 ± 0.004)

7.5 ± 0.01(0.295 ± 0.004)

2 ± 0.10(0.079 ± 0.004)

8.0 ± 0.10(0.315 + 0.004)

10.36 ± 0.100.408 ± 0.004

10.36 ± 0.100.408 ± 0.004

4.92 ± 0.100.194 ± 0.004

1.5 + 0.25, - 0.00.059 + 0.001, - 0.0

24 ± 0.3

21831-1

4 ± 0.1 1.75 ± 0.1

11.5 ± 0.1

2 ± 0.1

8 ± 0.1

12.10 ± 0.15

4.9 ± 0.35 (1)1.5 + 0.25, - 0.0

0.35 ± 0.05

1.5 ± 0.1

XX

R 0.764.1 ± 0.1

Section X-X

(1) 4.65 ± 0.15 in the case of the VO61X series

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Rev. 2.2, 06-Oct-11 7 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR SMD-6 OPTOCOUPLERS WITH OPTION 7Dimensions in millimeters

Selected 6 pin optocouplers with option 7 are available intape and reel format. To order 6 pin optocoupler with option7 on tape and reel, add a suffix “T” after the option, i.e.,CNY17-3X007T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 6 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 15

TAPE ANR REEL PACKAGING FOR SMD-6 OPTOCOUPLERS WITH OPTION 9Dimensions in millimeters

Selected 6 pin optocouplers with option 9 are available intape and reel format. To order 6 pin optocoupler with option9 on tape and reel, add a suffix “T” after the option, i.e.,CNY17-3X009T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 6 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 16

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulativetolerance on tape± 0.2

1.5 min.

Ø 1.5

Pin 1 and topof component

Topcovertape

13.3

4.57

0.35

0.1 max.

16 ± 0.3

18006

4 ± 0.1

2 ± 0.05

10.4

9

12

7.5 ± 0.05

1.75 ± 0.1

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulativetolerance on tape± 0.2

1.5 min.

Ø 1.5

Pin 1 and topof component

Topcovertape

13.3

4.09

0.3 max.

0.1 max.

16 ± 0.3

18007

4 ± 0.1

2 ± 0.05

10.35

9.14

12

7.5 ± 0.05

1.75 ± 0.1

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Rev. 2.2, 06-Oct-11 8 Document Number: 83714

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TAPE ANR REEL PACKAGING FOR SMD-8 OPTOCOUPLERS WITH OPTION 7Dimensions in millimeters (inches)

Selected 8 pin optocouplers with option 9 are available intape and reel format. To order 8 pin optocoupler with option7 on tape and reel, add a suffix “T” after the option, i.e.,ILCT6-X007T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 8-pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 17

TAPE ANR REEL PACKAGING FOR SMD-8 OPTOCOUPLERS WITH OPTION 9Dimensions in millimeters (inches)

Selected 8-pin optocouplers with option 9 are available intape and reel format. To order 8 pin optocoupler with option9 on tape and reel, add a suffix “T” after the option, i.e.,ILCT6-X009T.

The tape is 16 mm and is wound on a 33 cm reel. There are1000 parts per reel. Taped and reeled 8 pin optocouplersconform to EIA-481-2 and IEC 60286-3.

Fig. 18

1.75 ± 0.1(0.069 ± 0.004)

13.3 (0.523)

4.7 (0.185)

0.35 (0.014)

16.0 ± 0.3(0.630 ± 0.012)

18008

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

10.41 (0.410)

10.21(0.402)

12.0 (0.472)

7.5 ± 0.05(0.295 ± 0.002)

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.

1.5 (0.059)

Pin 1 and top of component

Topcovertape

0.1 (0.004) max.

4.17 (0.164)

18009

10.2 (0.402)

10.31(0.406)

12.0 (0.472)

1.75 ± 0.1(0.069 ± 0.004)

13.3 (0.523)

0.35 (0.014)

16.0 ± 0.3(0.630 ± 0.012)

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

7.5 ± 0.05(0.295 ± 0.002)

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.

1.5 (0.059)

Pin 1 and top of component

Topcovertape

0.1 (0.004) max.

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Rev. 2.2, 06-Oct-11 9 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR SMD-16 OPTOCOUPLERS WITH OPTION 7Dimensions in millimeters (inches)

Selected 16 pin optocouplers with option 7 are available intape and reel format. To order 16 pin optocoupler withoption 7 on tape and reel, add a suffix “T” after the option,i.e., ILQ-X007T.

The tape is 32 mm and is wound on a 33 cm reel. There are750 parts per reel. Taped and reeled 16 pin optocouplersconform to EIA-481 and IEC 60286-3.

Fig. 19

TAPE ANR REEL PACKAGING FOR SMD-16 OPTOCOUPLERS WITH OPTION 9Dimensions in millimeters (inches)

Selected 16-pin optocouplers with option 9 are available intape and reel format. To order 16 pin optocoupler withoption 9 on tape and reel, add a suffix “T” after the option,i.e., ILQ1-X009T.

The tape is 32 mm and is wound on a 33 cm reel. There are750 parts per reel. Taped and reeled 16 pin optocouplersconform to EIA-481 and IEC 60286-3.

Fig. 20

2.0 (0.079)

1.75 ± 0.1(0.069 ± 0.004)

25.5 (1.004)

4.72 (0.186)

0.35 (0.014) max.

0.1 (0.004) max.

32 (1.260)

18010

10.41 (0.410)

20.29(0.799)

16.0 (0.630)

14.2 ± 0.05(0.559 ± 0.002)

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

Embossment

Direction of feed

Center linesof cavity

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.Pin 1 and top of component

Topcovertape

Embossment

Direction of feed

Center linesof cavity

2.0 (0.079)

25.5 (1.004)

4.30 (0.169)

0.35 (0.014)

0.1 (0.004) max.

18011

10.19 (0.401)

20.24(0.797)

16.0 (0.630)

1.75 ± 0.1(0.069 ± 0.004)

32 (1.260)14.2 ± 0.05(0.559 ± 0.002)

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.Pin 1 and top of component

Topcovertape

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Rev. 2.2, 06-Oct-11 10 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR SOP-8 OPTOCOUPLERSDimensions in millimeters (inches)

Selected 8 pin 2 mm optocouplers are available in tape andreel format. To order 8 pin 2 mm optocoupler on tape andreel, add a suffix “T” after the part number.

The tape is 16 mm and is wound on a 33 cm reel. There are2000 parts per reel. Taped and reeled 8 pin 2 mmoptocouplers conform to EIA-481 and IEC 60286-3.

Fig. 21

TAPE ANR REEL PACKAGING FOR SOT223/10 MINI-COUPLERSDimensions in millimeters (inches)

Selected 10 pin mini-couplers are available in tape and reelformat. To order surface mount optocoupler on tape andreel, add a suffix “T” after the part number.

The tape is 16 mm and is wound on a 33 cm reel. There are2000 parts per reel. Taped and reeled 10 pin mini-couplersconform to EIA-481 and IEC 60286-3.

Fig. 22

1.5 (0.059)

13.3 (0.523)

2.77 (0.109)

0.35 (0.014)

16.0 ± 0.3(0.630 ± 0.012)

18012

9.04 (0.356)

6.05(0.238)

12.0 (0.472)

7.5 ± 0.05(0.295 ± 0.002)

Embossment

Direction of feed

0.1 (0.004) max.

(0.069 ± 0.004)

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

1.5 (0.059) min.Pin 1 and top of component

Center linesof cavity

Topcovertape

1.75 ± 0.1

2.0 (0.079)

0.3 (0.012) max.

18013

7.29 (0.287)

6.76(0.266)

12.0 (0.472)

1.5 (0.059)

13.3 (0.523)

16.0 ± 0.3(0.630 ± 0.012)

7.5 ± 0.05(0.295 ± 0.002)

Embossment

Direction of feed

0.1 (0.004) max.

(0.069 ± 0.004)

4 ± 0.1(1.57 ± 0.004)

2 ± 0.05 (0.079 ± 0.002)

10 pitch cumulative tolerance on tape ± 0.2 (0.008)

Pin 1 and top of component

Center linesof cavity

Topcovertape

1.75 ± 0.1

1.5 (0.059) min.

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Packaging, Tape and Reel Informationwww.vishay.com Vishay Semiconductors

Rev. 2.2, 06-Oct-11 11 Document Number: 83714

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR TCMT4XXX SERIESDimensions in millimeters

2000 pcs/reel

Fig. 23

TAPE ANR REEL PACKAGING FOR TCMT4XXXT0 SERIESDimensions in millimeters

2000 pcs/reel

Fig. 24

18427

technical drawingsaccording to DINspecification

7.4 122.2

2 42.6

0.3

16

7.5

10.6

Ø 1.55

1.75

Ø 1.6

Direction of pulling out

18427_1

technical drawingsaccording to DINspecification

7.4 122.2

2 42.6

0.3

16

7.5

10.6

Ø 1.55

1.75

Ø 1.6

Direction of pulling out

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Packaging, Tape and Reel Informationwww.vishay.com Vishay Semiconductors

Rev. 2.2, 06-Oct-11 12 Document Number: 83714

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR TCMT1XXX SERIESDimensions in millimeters

Fig. 25

TAPE ANR REEL PACKAGING FOR TCMT1XXXT3 SERIESDimensions in millimeters

Fig. 26

18428

technical drawingsaccording to DINspecification

2.95 8

2.2

2 4

2.6

0.3

16

7.5

7.4

Ø 1.551.75

Ø 1.6

Direction of pulling out

20951

technical drawingsaccording to DINspecification

Direction of feed

Pin 1 and top ofcomponent

Pot cover tape

2.95

82.2

2 4 2.6

0.3

16

7.5

7.4

Ø 1.55

1.75

Ø 1.6

13.3

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Rev. 2.2, 06-Oct-11 13 Document Number: 83714

For technical questions, contact: [email protected] DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING FOR TCLT PRODUCT SERIES (both SOP-4L and SOP-4L5)Dimensions in millimeters

3000 pcs/reel

Fig. 27

TAPE ANR REEL PACKAGING 4 PIN MINIFLAT FOR SFH690ABT, SFH690AT, SFH690BT, SFH690CTDimensions in millimeters (inches)

Fig. 28

18429

technical drawingsaccording to DINspecification

4.25 82.3

2 4

2.7

0.3

16

7.5

10.6

Ø 1.551.75

Ø 1.6

Direction of pulling out

0.76 (0.030) R 4°

Typ. 4.30

0.318+ 0.3- 0.1

(0.0125 ± 0.0012)

2.3 6 ± 0.1(0.09 3 ± 0.004)2.6 6 ± 0.1

(0.105 ± 0.004)

7.33 ± 0.1(0.289 ± 0.004)

8.0 0 ± 0.1(0.315 ± 0.004)

4.7 2 ± 0.1(0.18 6 ± 0.004)

1.50 + 0.25(0.05 9 + 0.10)

12.00+ 0.3- 0.1

(0.472 )+ 0.012- 0.004

5.5 0 ± 0.05(0.216 ± 0.002)

1.7 5 ± 0.1(0.069 ± 0.0049)

1.50 + 0.1(0.059 + 0.004)

4.0 0 ± 0.1(0.157 ± 0.004)

2.0 0 ± 0.05(0.079 ± 0.002)

18956

12

3 4

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Rev. 2.2, 06-Oct-11 14 Document Number: 83714

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TAPE ANR REEL PACKAGING 4 PIN MINIFLAT, 180° ROTATIONDimensions in millimeters (inches)

Selected 4 pin miniflats are available in tape and reel formatwith the part rotated by 180°. To order this version, thetape and reel suffix “T” is augmented by the numerial “3”

eg. SFH690BT3. The tape is 16 mm and is wound on a33 cm reel. There are 2000 parts per reel.

Fig. 29

8 °

0.76 (0.030) R 4 °

typ. 4.30

0.318+0.3- 0.1

(0.0125 ± 0.0012)

2.36 ± 0.1(0.093 ± 0.004)2.66 ± 0.1(0.105 ± 0.004)

7.3 3 ± 0.1(0.289 ± 0.004)

8.00 ± 0.1(0.315 ± 0.004)

4.7 2 ± 0.1(0.186 ± 0.004)

1.50 + 0.25(0.059 + 0.10)

12.00+ 0.3- 0.1

(0.472 )+ 0.012- 0.004

5.50 ± 0.05(0.216 ± 0.002)

1.7 5 ± 0.1(0.06 9 ± 0.0049)

1.50 + 0.1(0.05 9 + 0.004)

4.0 0 ± 0.1(0.157

2.00 ± 0.05(0.07 9 ± 0.002)

18956_1

34

1 2

± 0.004)

Page 148: Bundle (1)

Document Number: 80059 For technical questions, contact: [email protected] www.vishay.comRev. 1.6, 08-Jan-08 1

General Description

General DescriptionVishay Semiconductors

BASIC FUNCTIONIn an electrical circuit, an optocoupler ensures total electricisolation, including potential isolation, as in the case of atransformer, for instance

In practice, this means that the control circuit is located onone side of the optocoupler, i.e., the emitter side, while theload circuit is located on the other side, i.e., the detector side.Both circuits are electrically isolated by the optocoupler.Signals from the control circuit are transmitted optically to theload circuit. In most cases, this optical transmission isrealized with light beams whose wavelengths span the red toinfrared range, depending on the requirements applicable tothe optocoupler. The bandwidth of the signal to betransmitted ranges from a dc voltage signal to frequencies inthe MHz band. An optocoupler is comparable to atransformer or relay. Besides having smaller dimensions inmost cases, the advantages of optocouplers are: shorterswitching times, no contact bounce, no interference causedby arcs, wear the circuitry1). Optocouplers are suitable forcircuits used in microelectronics, data processing andtelecommunication systems. Optocouplers are used to anincreasing extent as safety tested components, e. g., inswitch mode power supplies.

Note1. See Applications Notes for additional information.

DESIGNAn optocoupler has to fulfill 5 essential requirements:

• Good isolation

• High current transfer ratio (CTR)

• Low degradation

• No interference by field strength influences

These factors are essentially dependent on the design, thematerials used and the corresponding chips used for theemitter/detector.Vishay has succeeded in achieving a design with optimizedisolation behavior and good transfer characteristics. Thebasic function of an optocoupler is to isolate the input fromthe output by means of an insulation material. The thickness-through-insulation of at least 4 mm providedby Vishay provides better safety and protection againstelectrical shock (see Figure 1 and 2). Vishay builds inadditional reliability in these devices to protect the couplersystem against ambient light and dust. The mechanical clearance between the emitter and detectoris at least 4 mm and is thus mechanically stable even underthermal overloads, i.e., the possibility of a shortcircuit caused by material short circuit is minimized. This isimportant for optocouplers which must meet strictsafety requirements (VDE/UL specifications), seeDIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending

facts and information. As a result, Vishay couplers have avery low coupling capacitance of 0.2 pF. Couplers withconventional designs have higher coupling capacitancevalues by a factor of 1.3 to 2. Attention must be paid to thecoupling capacitance in digital circuits in which steep pulseedges are produced which superimpose themselves on thecontrol signal. With a low coupling capacitance, thetransmission capabilities of these interference spikes areeffectively suppressed between the input and output. Thiscapability of suppressing dynamic interferences is commonlyknown as "common-mode rejection"1).

Note1. See Applications Notes for additional information.

Fig. 1 - Coplanar Construction Principle

Fig. 2 - Face to Face Construction Principle

17358

Leadframe

Detector Die

Bond Wire

Reflected Radiance

Clear epoxyd Compound

Emitter Die

Epoxyd Compound

17357

Leadframe

Detector Die

Bond Wire Infrared PermeableMold Compound

Infrared Emitter Die

Special MoldCompound

Page 149: Bundle (1)

www.vishay.com For technical questions, contact: [email protected] Document Number: 800592 Rev. 1.6, 08-Jan-08

General DescriptionVishay Semiconductors General Description

The degradation of an optocoupler, i.e., impairment of itsCTR over a finite period, depends on:

1. the emitter element due to its decreasing radiation powerwhile

2. the degradation of an optocoupler over time resultsprimarily from the emitter chip

A decrease in the radiation power can be primarily ascribedto thermal stress caused by an external, high ambienttemperature and/or high a forward current. In practice,optocouplers are operated with forward current of 1 to 30 mAthrough the emitting diode. In this range, degradation at anaverage temperature of 40 °C is less than 5 % after 1000 h.In general, an optocoupler’s life time is a period of 100000 h,i.e, the CTR should not have dropped below 50 % of its valueat 0 h during this time (see figure 4).

Fig. 3 - Function of Parasitic Field Effect Transistor as a Result of Failure (Latch-up) in the Phototransistor of Couplers

Fig. 4 - Degradation under Typical Operating Conditions

TECHNICAL DESCRIPTION – ASSEMBLY

EmitterEmitters are manufactured using the most modern LiquidPhase Epitaxy (LPE) process. By using this technology, thenumber of undesirable flaws in the crystal is reduced. Thisresults in a higher quantum efficiency and thus higherradiation power. Distortions in the crystal are prevented byusing mesa technology which leads to lower degradation. Afurther advantage of the mesa technology is that eachindividual chip can be tested optically and electrically evenon the wafer.

DetectorVishay detectors have been developed so that they match tothe emitter. They have low capacitance values, highphotosensitivity and are designed for an extremely lowsaturation voltage. Silicon nitride passivation protects thesurface against possible impurities.

AssemblyThe components are fitted onto lead frames by fullyautomatic equipment using conductive epoxy or eutecticadhesive. Contacts are established automatically with digitalpattern recognition using the well-proven thermosonictechnique. In addition to optical and mechanical checkmechanical checks, all couplers are measured at atemperature of 100 °C on short/open test equipment.

Contact Positive IonsPlastic

SiO

SiP-BaseInversion Area

N-Emitter

N-Collector16514

0

10

20

30

40

50

60

70

80

90

100

0 20000 40000 60000 80000 100000

Ave

rage

Per

cent

of I

nitia

l CT

R

Life Test Hours15918

Tj = 60 °C

Tj = 125 °C

IF = 60 mA

IF = 60 mALeadership in TechnologyThe Die’s Molecular StructureMesa TechnologySpecial Bond Layout Results in anHomogenuous Current DistributionSPecial Rear Metalization

Page 150: Bundle (1)

Legal Disclaimer Noticewww.vishay.com Vishay

Revision: 12-Mar-12 1 Document Number: 91000

DisclaimerALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVERELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any otherdisclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose orthe continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and allliability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particularpurpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typicalrequirements that are often placed on Vishay products in generic applications. Such statements are not binding statementsabout the suitability of products for a particular application. It is the customer’s responsibility to validate that a particularproduct with the properties described in the product specification is suitable for use in a particular application. Parametersprovided in datasheets and/or specifications may vary in different applications and performance may vary over time. Alloperating parameters, including typical parameters, must be validated for each customer application by the customer’stechnical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainingapplications or for any other application in which the failure of the Vishay product could result in personal injury or death.Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agreeto fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses anddamages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishayor its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel toobtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or byany conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill thedefinitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Councilof June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm thatall the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.