c1815y datasheet

http://www.weitron.com.tw WEITRON Lead(Pb)-Free Pb 1/2 23-Nov-06 NPN Plastic-Encapsulate Transistors C1815 FEATURES Power dissipation MAXIMUM RATINGS* T A =25℃ unless otherwise noted Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 150 mA P D Total Device Dissipation 400 mW T J , T stg Junction and Storage Temperature -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) CBO Ic= 100 uA, I E =0 60 V Collector-emitter breakdown voltage V(BR) CEO Ic= 0. 1 mA, I B =0 50 V Emitter-base breakdown voltage V(BR) EBO I E = 100 uA, I C =0 5 V Collector cut-off current I CBO V CB = 60 V , I E =0 0.1 uA Collector cut-off current I CEO V CE = 50 V , I B =0 0.1 uA Emitter cut-off current I EBO V EB = 5 V, I C =0 0.1 uA DC current gain h FE(1) V CE = 6 V, I C = 2mA 70 700 Collector-emitter saturation voltage V CE (sat) I C = 100mA, I B = 10 mA 0.25 V Base-emitter saturation voltage V BE (sat) I C = 100 mA, I B = 10mA 1 V Transition frequency f T V CE = 10 V, I C = 1mA f=30MHz 80 MHz Collector Output Capacitance Cob VCB=10V,IE=0 f=1MHZ 3.5 pF Noise Figure NF V CE = 6 V, I C =0.1 mA f =1KHz,RG=10K 10 dB CLASSIFICATION OF h FE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 1 2 3 TO—92 1.EMITTER 2.COLLECTOR 3.BASE

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http://www.weitron.com.twWEITRON

Lead(Pb)-FreePb

1/2 23-Nov-06

NPN Plastic-Encapsulate Transistors

C1815

FEATURES Power dissipation

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 50 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 150 mA

PD Total Device Dissipation 400 mW

TJ, Tstg Junction and Storage Temperature -55-150 ℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V

Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V

Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 uA

Collector cut-off current ICEO VCE= 50 V , IB=0 0.1 uA

Emitter cut-off current IEBO VEB= 5 V, IC=0 0.1 uA

DC current gain hFE(1) VCE= 6 V, IC= 2mA 70 700

Collector-emitter saturation voltage VCE(sat) IC= 100mA, IB= 10 mA 0.25 V

Base-emitter saturation voltage VBE(sat) IC= 100 mA, IB= 10mA 1 V

Transition frequency fT VCE= 10 V, IC= 1mA f=30MHz 80 MHz

Collector Output Capacitance Cob VCB=10V,IE=0 f=1MHZ 3.5 pF