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  • 1. Simplify the Science of ALD. Cambridge NanoTech Corporate Overview August 2009

2. Cambridge NanoTech ALD Systems All Cambridge NanoTech ALD Systems are controlled with a convenient Labview-PC-USB interface. All ALD systems have hot walls with cross-flow precursor deposition. N2 gas is used for high speed pulse-purge cycles. Prior to deposition, a substrate is inserted into the ALD reactor, and is heated usually between 50-400C.Cambridge NanoTech Inc. Confidential 2 3. ALD Cycle for Al2O3 DepositionTri-methylaluminum Methyl groupMethane reaction (CH3) Reaction of product (CH4)Al(CH3)3(g)H TMA with OHH Al CCHHHydroxyl (OH)H HHH from surfaceH CC H adsorbed H2O HAlHO OSubstrate surface (e.g. Si)Substrate surface (e.g. Si)Trimethyl Aluminum (TMA) reacts with the In air H2O vapor is adsorbed on most surfaces,adsorbed hydroxyl groups, producing methane as forming a hydroxyl group. With silicon this forms:the reaction product.Si-O-H (s). After placing the substrate in the reactor, Trimethyl Aluminum (TMA) is pulsed into the reaction chamber. Trimethyl Aluminum (TMA) reacts with the adsorbedhydroxyl groups, producing methane as the reactionproduct.Al(CH3)3 (g) + : Si-O-H (s) :Si-O-Al(CH3)2 (s) + CH4Cambridge NanoTech Inc. Confidential 3 4. ALD Cycle for Al2O3 DepositionMethanereactionproduct CH4 HReaction of H CTMA with OH H HH H H CC H H Al O Substrate surface (e.g. Si) Trimethyl Aluminum (TMA) reacts with the adsorbedhydroxyl groups, producing methane as the reactionproduct. Al(CH3)3 (g) + : Si-O-H(s) :Si-O-Al(CH3)2 (s) + CH4Cambridge NanoTech Inc. Confidential4 5. ALD Cycle for Al2O3 Deposition Excess TMA Methane reactionproduct CH4 HH H CC H Al O Substrate surface (e.g. Si) Trimethyl Aluminum (TMA) reacts with the adsorbedhydroxyl groups, until the surface is passivated. TMA doesnot react with itself, terminating the reaction to one layer.This causes the perfect uniformity of ALD. The excess TMAis pumped away with the methane reaction product.Cambridge NanoTech Inc. Confidential5 6. ALD Cycle for Al2O3 DepositionH 2O O H H H H H C C H Al O After the TMA and methane reaction product is pumpedaway, water vapor (H2O) is pulsed into the reaction chamber.Cambridge NanoTech Inc. Confidential 6 7. ALD Cycle for Al2O3 Deposition Methane reaction productNew hydroxyl group Methane reactionHOxygen bridges product OOAl Al Al O H2O reacts with the dangling methyl groups on the newsurface forming aluminum-oxygen (AI-O) bridges andhydroxyl surface groups, waiting for a new TMA pulse.Again, methane is the reaction product.2 H2O (g) + :Si-O-Al(CH3)2 (s) :Si-O-Al(OH)2 (s) + 2 CH4Cambridge NanoTech Inc. Confidential7 8. ALD Cycle for Al2O3 DepositionHOOO Al Al AlO The reaction product methane is pumped away. Excess H2Ovapor does not react with the hydroxyl surface groups, againcausing perfect passivation to one atomic layer.Cambridge NanoTech Inc. Confidential8 9. ALD Cycle for Al2O3 Deposition HHH OOOOO Al Al Al OOOOO Al Al Al OO OOO Al Al Al OOO One TMA and one H2O vapor pulse form one cycle. Herethree cycles are shown, with approximately 1 Angstrom percycle. Each cycle including pulsing and pumping takes, e.g.3 sec. Two reaction stepsAl(CH3)3 (g) + :Al-O-H (s) :Al-O-Al(CH3)2(s) + CH4in each cycle:2 H2O (g) + :O-Al(CH3)2 :Al-O-Al(OH)2 + 2 CH4(s)(s)Cambridge NanoTech Inc. Confidential9 10. ALD Cycle for Al2O3 Deposition The saturative chemisorption of each layer and itssubsequent monolayer passivation in each cycle, allowsexcellent uniformity into high aspect ratio 3D structures,such as DRAM trenches, MEMS devices, around particles, etc.Cambridge NanoTech Inc. Confidential 10 11. ALD Deposition AdvantagesAlternating reactant exposure creates uniqueproperties of deposited coatings: Thickness determined simply by number of cycles Precursors are saturatively chemisorbed => stoichiometric films with large area uniformity and 3D conformality Relatively insensitive to dust (film grows underneath dust particles) Intrinsic deposition uniformity and small source size => easy scaling Nanolaminates and mixed oxides possible Low temperature deposition possible (RT-400 C) Gentle deposition process for sensitive substratesCambridge NanoTech Inc. Confidential 11 12. Cambridge NanoTech ALD Systems Savannah - Thermal ALD System for R&D More than 100 systems sold Fiji Plasma ALD System for R&D Next generation plasma ALD system Phoenix Batch Production Thermal ALD System Batch production for Gen 2 substrates and wafers Tahiti Large Surface Area Production Thermal ALD System Stackable chambers for Gen 4.5 substrates SavannahFijiPhoenix TahitiCambridge NanoTech Inc. Confidential12 13. Savannah ALD Systems Worlds most popular ALD system for R&D Great films and easy to use System set up in under 3 hours Intuitive user interface very easy to learn Recipes includedSavannah S100Savannah S200 Savannah S300Cambridge NanoTech Inc. Confidential 13 14. Patent Pending ALD ShieldTM Trap Flow direction CoatingNo coatingCambridge NanoTechs highconductance hot foil ALD trapforms a uniform solid coatinguntil the precursor is depleted.Traps can be cleaned after 100m of coating.Cambridge NanoTech Inc. Confidential 14 15. Fiji: Next Gen Plasma ALD System Revolutionary reactor design built from ALDprincipals, NOT a converted CVD chamber: Contoured shape for laminar flow and uniform depositions Design eliminates gate valves in the reactor Close mixing of precursor and plasma gases Based on world class Savannah ALD system Proven precursor delivery system Integrated ALD Shield vapor trap Modular design and many configurations Single and dual chamber configurations available Options include load lock, turbo pumps, and automatic pressure control (APC)Cambridge NanoTech Inc. Confidential 15 16. Sample Fiji ConfigurationsSingle Chamber withDual Chamber Dual Chamber withLoad Lock Cleanroom FaadeAlso Available: Dual chamber with load locks, Single chamber withclean room faade, and optional analysis ports in reaction chamberCambridge NanoTech Inc. Confidential16 17. Phoenix Batch ALD System Phoenix System Overview Batch ALD production system 5 GEN 2 substrates (370x470 mm) 52 wafers: 200 mm 78 wafers: 150 mm Large objects Deposition temperature: 85285 C Uniformity < 3% 2-sigma (Al2O3) Small footprint: 700x700 mm Optimized for low maintenance stainless steel liner and trap easily exchanged for periodic cleaning Exchange time approx. 1 hour Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenanceCambridge NanoTech Inc. Confidential 17 18. Tahiti ALD System Tahiti System Overview Tahiti Large Surface Area production system 2 Gen 4.5 substrates Scalable to accommodate Gen 5 substratesand larger Uniformity < 5% 3-sigma (Al2O3) Dual stacked chambers saves cleanroom space Optimized for low maintenance Stainless steel liner and trap easily exchanged for periodic cleaning Patent pending trap prevents coating inside the pumping line and pump decreasing pumping line and pump maintenance Automation-ready with easy network connectivity and on-board diagnostics.Cambridge NanoTech Inc. Confidential 18 19. Cambridge NanoTech Summary Cambridge NanoTech is a world leader in ALD technology World-class ALD scientist led by Dr. Jill Becker, Founder Leading ALD research with association with Harvard Univ. Leader in ALD R&D systems with over 150 Savannahs worldwide Many satisfied customers and references Developed Phoenix and Fiji ALD systems under contract with CNT customers Leading Semiconductor manufacturer hired CNT to develop the Phoenix ALD production system Leading R&D Institute hired CNT to develop the next generation plasma ALD system - See Website for additional informationCambridge NanoTech Inc. Confidential19