chap 2 : lithographycontents.kocw.net/.../2015/sungkyunkwan/leejunsin1/7.pdf · 2016. 9. 9. ·...
TRANSCRIPT
![Page 1: CHAP 2 : Lithographycontents.kocw.net/.../2015/sungkyunkwan/leejunsin1/7.pdf · 2016. 9. 9. · Step-by-Step Discussion for “Lithography” (1) Wafer Cleaning . 전자물성공학](https://reader033.vdocuments.net/reader033/viewer/2022060913/60a7028b4a0c91171b2fc61b/html5/thumbnails/1.jpg)
전자물성공학 22
CHAP 2 : Lithography The Photolithographic Process
What is the lithgraphy process?
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Steps of the photolithographic process (Fig. 2.1)
We will discuss the above steps in detail.
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Drawings of wafer through the various steps of the lithography process (Fig. 2.2)
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(d:PR develop, e:SiO2etching, f:PR removal)
Final pattern after completing a photo-lithographic process.
Compare to the pattern on the mask.
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전자물성공학 26
Clean room is needed for IC fabrication. Clean room Construction (one of examples)
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전자물성공학 27
Cleanroom Class
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전자물성공학 28
Step-by-Step Discussion for “Lithography” (1) Wafer Cleaning
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Typically RCA cleaning method is used.
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전자물성공학 30
(2) Barrier Layer (i.e., thin film to be addressed to the lithographic process) Formation
(3) Photoresist Application
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(4) Soft Baking (or Prebaking) : Used to improve adhesion and remove solvent from the photoresist (PR).Annealing in an air or N2 atmosphere at 80-90oC for 10-30 min.
(5) Mask Alignment
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전자물성공학 32
(6) Photoresist Exposure and Development
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전자물성공학 33
(7) Hard Baking : Used to harden the photoresist. Annealing in an oven at 120-180oC for 20-30 min.
(8) Etching
(9) PR Removal Wet Dry (Resist Ashing) : Remove resist by oxidizing
(burning) it in an oxygen plasma system.
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전자물성공학 34
Etching Techniques
Wet Chemical Etching Dry Etching
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Isotrophic etching was acceptable in the past.
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전자물성공학 36
However, a narrow design rule require anisotrophic etching.
Lost the pattern
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전자물성공학 37
For anisotrophic etching, we need to understand the plasma magic: However, it is beyond the scope of the current course.
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전자물성공학 38
Use both the ion energy and the chemical reaction
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전자물성공학 39
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전자물성공학 40
Example of dry etching; Deep Trench
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전자물성공학 41
Photomask Fabrication
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전자물성공학 42
Mask Fabrication : (a) Composite computer graphics plot of all masks for IC
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(b) 10x reticle of metal-level mask
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전자물성공학 44
(c)Final-size emulsion mask with 400 copies of the metal level of the IC in (a)
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전자물성공학 45
Various Printing Techniques