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CMOS Single Photon Detectors CMOS Single Photon Detectors Edoardo Charbon Edoardo Charbon AQUA - LAP - CSCT AQUA - LAP - CSCT Ecole Polytechnique F Ecole Polytechnique Fédé rale rale , Lausanne , Lausanne (EPFL) (EPFL)

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Page 1: CMOS Single Photon Detectorsdemichel/si.epfl.ch/files... · –Build depth map of the scene. Specific 3D Applications •Surveying –Geo, construction •Automotive –Airbag deployment

CMOS Single Photon DetectorsCMOS Single Photon Detectors

Edoardo CharbonEdoardo CharbonAQUA - LAP - CSCTAQUA - LAP - CSCT

Ecole Polytechnique FEcole Polytechnique Fééddééralerale, Lausanne, Lausanne(EPFL)(EPFL)

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Cristiano Niclass

Dr. Claudio Bruschini Chantal Schneeberger

Ties Kluter Randhir K. Singh

Huan Du

Dr. Max Sergio

Abhishek Garg

AcknowledgementsAcknowledgementsThe The AQUA GroupAQUA Group was started in June 2003. It is funded by the Swiss was started in June 2003. It is funded by the SwissNational Science Foundation and LogitechNational Science Foundation and Logitech

Marek Gersbach

Claudio Favi

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The World Is AnalogThe World Is Analog

Physical EntityPhysical Entity

ObserverObserver

Quantitative Quantitative Result Result

OB

SE

RV

AT

ION

OB

SE

RV

AT

ION

MEASUREMENTMEASUREMENT

Is it Continuous?

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Typical Measurement ProcessTypical Measurement Process

Quantization in time and amplitudeQuantization in time and amplitude

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Quanta Quanta →→ Analog Signal Analog Signal →→ DigitalDigital

In RealityIn Reality……

•• The world is not analog but measurable byThe world is not analog but measurable byquantaquanta

•• The analog measurement is the result of aThe analog measurement is the result of aconversion of the true signalconversion of the true signal

•• Every conversion introduces errorsEvery conversion introduces errors

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Why not Skipping Analog?Why not Skipping Analog?

ExampleExample::

photons photons →→ digital pulsesdigital pulses

Quanta Quanta →→ DigitalDigital

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OutlineOutline

•• Why, when, where?Why, when, where?

•• Single Photon Avalanche Diodes (SPADs)Single Photon Avalanche Diodes (SPADs)

•• 3D Imaging3D Imaging

•• 2D Imaging2D Imaging

•• Conclusions & future workConclusions & future work

•• AcknowledgementsAcknowledgements

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Why, When, Where?Why, When, Where?

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Why Do We Care?Why Do We Care?

•• Single photon detectors (Single photon detectors (SPDsSPDs) are entering the) are entering themainstreammainstream

•• They will be found in medium to high volumeThey will be found in medium to high volumeapplicationsapplications

ExamplesExamples::–– Secure Telecom (private key distribution systems) [Gisin/Secure Telecom (private key distribution systems) [Gisin/UniGeUniGe,,

IdQuantiqueIdQuantique, , SensLSensL]]–– Optical Telecom [Optical Telecom [BoserBoser/UCB,/UCB, Pister Pister/UCB, Dust Networks]/UCB, Dust Networks]–– True Random Number Generators [Popovic/EPFL, True Random Number Generators [Popovic/EPFL, IdQuantiqueIdQuantique]]–– High sensitivity (LHigh sensitivity (L33) videocams [Cork ) videocams [Cork UnivUniv., ., QinetiQ, e2v]]–– 3D 3D videocams videocams for gaming applications [***]for gaming applications [***]–– Low dose X-ray imaging [Low dose X-ray imaging [HamamatsuHamamatsu, Fairchild Imaging], Fairchild Imaging]

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SPDs SPDs in Sciencein Science

•• Molecular count/detectionMolecular count/detection

•• NeuroNeuro-activity scanning (dye-activity scanning (dye11-based)-based)

•• Fluorescence correlation spectroscopyFluorescence correlation spectroscopy(FCS)(FCS)

•• Two-photon spectroscopyTwo-photon spectroscopy

•• Fluid-dynamics researchFluid-dynamics research

•• Non-ionizing imaging (Non-ionizing imaging (transilluminationtransillumination))

1) Dye is a substance composed of nanoparticles which change reflectivity depending on potential

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NeuroNeuro-activity Scanning-activity Scanning

[Grinvald et al., 2001]

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NeuroNeuro-activity Scanning (Cont.)-activity Scanning (Cont.)

ΔΔI I ≈≈ 10 10-3-3 I I

for for ΔΔI >> I >> σσ22(I) = I(I) = I1/21/2

→→ must work with ultra-highmust work with ultra-highintensitiesintensities

but, most but, most CCDs CCDs and CMOS APSand CMOS APSare are saturatedsaturated

[Grinvald et al., 2001]

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Fluorescence CorrelationFluorescence CorrelationSpectroscopySpectroscopy

CTI project 5814.1

Normalized Correlation

1

1.2

1.4

1.6

1.8

2

2.2

2.4

0.000010.0001 0.001 0.01 0.1 1 10 100 1000tau, ms

Cor

rela

tion

τ [ms]

FCS with CMOS SPAD

→→Picosecond time resolutionPicosecond time resolution is needed to build sufficiently is needed to build sufficiently precise characterizationprecise characterization

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Bioluminescence DetectionBioluminescence Detection

•• PrinciplePrinciple–– Luciferase Luciferase based assaybased assay

methods (550nm) usedmethods (550nm) usedto detect pathogens,to detect pathogens,proteins and DNAproteins and DNAsequencingsequencing

•• Features:Features:–– Sensitivity: Sensitivity: 1010-6-6LxLx

–– pixel size: 250x250umpixel size: 250x250um

[Eltoukhy et al., ISSCC 2004]

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Courtesy of H.M.FritzCourtesy of H.M.Fritz

Fluid-dynamics ResearchFluid-dynamics Research

•• Principle:Principle:–– Particle imageParticle image

velocimetry velocimetry (PIV)(PIV)•• Features: Features:

–– 1008x924 pixels1008x924 pixels–– Strobe illuminationStrobe illumination

1kHz1kHz–– Velocity profileVelocity profile

computation viacomputation viacross-correlationcross-correlation

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Single Photon ProjectsSingle Photon Projects

•• CurrentCurrent–– 3D camera3D camera–– Near-saturation cortical imaging (EPFL-LS)Near-saturation cortical imaging (EPFL-LS)–– High-speed digital camera (Industry)High-speed digital camera (Industry)–– High-speed shutter digital camera (ColumbiaHigh-speed shutter digital camera (Columbia

University)University)

•• Near futureNear future–– Ultra-high speed Calcium Flux in neurons (EPFL-LS)Ultra-high speed Calcium Flux in neurons (EPFL-LS)–– 3D long-distance camera (Industry)3D long-distance camera (Industry)–– Free space com (Academia)Free space com (Academia)–– Transillumination (EPFL-MT)Transillumination (EPFL-MT)

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Single Photon AvalancheSingle Photon AvalancheDiodes (SPADs)Diodes (SPADs)

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Φ(λ)Φ(λ)

qq

pp

Photoelectric EffectPhotoelectric Effect

Parameters: QE, p, Parameters: QE, p, λλ

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Avalanche EffectAvalanche Effect

Φ(λ)Φ(λ)

ppPhoto-multiplicationPhoto-multiplication

Parameters: QE, p, Parameters: QE, p, λλ

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SPAD Operating in Geiger ModeSPAD Operating in Geiger Mode

•• In avalanche mode:In avalanche mode:–– <G> <G> ≅≅ 1000 1000

•• In Geiger mode:In Geiger mode:

–– <G> <G> → ∞ avalanche must be stoppedavalanche must be stopped

[Rochas, TransED, 2002]

V

V

I

conventionalavalancheGeiger

opticalgain<G>

Vbd

1

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SPAD Operating in Geiger ModeSPAD Operating in Geiger Mode

passive quenching:

—One photon one cycle (dead time definition)—Thermally generated carriers dark counts

operation cycle:

t

VVbdbd

VVopop

V

V photonarrival

avalanchequenching

SPADrecharge

VVopop

RRqq

VIIAA

tdead0

DEAD TIME

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Dark CountsDark CountsIntuitionIntuition::

Traps capture Traps capture photocharges photocharges and release them randomlyand release them randomly(by diffusion, tunneling, etc.) (by diffusion, tunneling, etc.) →→ avalanche is triggered avalanche is triggered →→ spurious spurious

pulsespulses

p+

n-well

n+p+ p+n+

p-sub

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CMOS SPAD (ISSCC04)CMOS SPAD (ISSCC04)

OUTOUT

GNDGND

VDD = +5V

RRqq

VH= -25.5V= -25.5VMain features of the pixel• dead time : 32ns• PDP: ~ 12% @ 635nm• dark count rate typ. 350Hz• timing jitter: < 50ps

Vop = VDD + |VH| > Vbd

digitalpulse

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SPAD Evolution (ISSCC05)SPAD Evolution (ISSCC05)

FeaturesFeatures–– Pitch reductionPitch reduction

–– Column routing mechanismColumn routing mechanism

–– MOS Quenching resistanceMOS Quenching resistance

VDD

Vop

VDD

COLUMN

ROWSEL

ROWSEL

X

Tq

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3D Imaging3D Imaging

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GoalGoal

–– Find distance to each point in the sceneFind distance to each point in the scene((rangefindingrangefinding))

–– Build depth map of the sceneBuild depth map of the scene

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Specific 3D ApplicationsSpecific 3D Applications

•• SurveyingSurveying–– Geo, constructionGeo, construction

•• AutomotiveAutomotive–– Airbag deploymentAirbag deployment–– Collision detection/avoidanceCollision detection/avoidance

•• SecuritySecurity–– facial recognitionfacial recognition–– room volumetric analysisroom volumetric analysis

•• ConsumerConsumer–– Human-computer interfacesHuman-computer interfaces–– VRVR

•• Medical/ResearchMedical/Research–– Optical tomographyOptical tomography–– Bio-chemical & molecular analysisBio-chemical & molecular analysis

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Electronic Electronic TheodolitesTheodolites

•• Some specificationsSome specificationsSub-mm precisionSub-mm precision~100m range~100m rangeLow fps(?)Low fps(?)

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Face RecognitionFace Recognition

•• Some specificationsSome specifications–– 600um~1mm precision600um~1mm precision

–– 1~2m range1~2m range

–– 30 fps30 fps

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Virtual (Planar) KeyboardVirtual (Planar) Keyboard

•• Some specificationsSome specifications–– 2mm precision2mm precision–– 20~30cm range20~30cm range–– 50-70 fps50-70 fps

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3D Imaging:3D Imaging:

optical Time-of-flight (TOF)optical Time-of-flight (TOF)

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RangefindingRangefinding

MethodsMethods–– InterferometryInterferometry–– TriangulationTriangulation

–– Time-of-flight (TOF)Time-of-flight (TOF)PrinciplePrinciple

–– LightLight–– RFRF–– UltrasoundUltrasound–– MagnetismMagnetism

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Optical TOF Based RangefindingOptical TOF Based Rangefinding

pulsedlight source

TOF measurement

3D image reconstruction d

d = (c/2) TOFd = (c/2) TOF

opticalsensor

target

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Conventional ApproachesConventional Approaches

•• SingleSingle highly sensitive detector with mechanical scanning highly sensitive detector with mechanical scanningdevicedevice

•• ProblemsProblems::→→ high-cost high-cost→→ non-portable non-portable

•• ArrayArray of conventional CMOS detectors with high-power of conventional CMOS detectors with high-poweroptical sourceoptical source

•• ProblemsProblems::→→ 10~100W peak power 10~100W peak power→→ potentially unsafe potentially unsafe

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Our ApproachOur Approach

•• ArrayArray of Single Photon Avalanche Diodes of Single Photon Avalanche Diodes(SPADs) fabricated in CMOS process(SPADs) fabricated in CMOS process

•• ProsPros::–– Milliwatt Milliwatt laser source (peak power)laser source (peak power)

–– CompactCompact

–– Low costLow cost

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3D Imaging:3D Imaging:

System ArchitectureSystem Architecture

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Sensor ArchitectureSensor Architecture

SPAD Array

Multiplexer

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Sensor PhotomicrographSensor Photomicrograph

LFSRLFSR

1k pixel1k pixelarrayarray

Osc.Osc.

RROOWW

DDEECCOODDEERR

COL. DECOL. DECODERCODER

2.5mm2.5mm

2.8m

m2.

8mm

0.8um0.8umCMOSCMOStechnologytechnology

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PULSED LASER

CMOS SPAD SENSOR

CMOSTDC

TARGETSTANDARDLENS

STARTSTOP

Electro-Optical SystemElectro-Optical System

• uncollimated 635nm laser• pulse width : 100ps• peak power : 100~250mW• fR = 40~50MHz

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TOF ComputingTOF Computing

TOF

laser pulse

SPAD signal

targethistogram

reference histogram

differentialTOF

start

stop

300ps

t

t

t

t

(M measurements)

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3D Imaging:3D Imaging:

MeasurementsMeasurements

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Time ResolutionTime Resolution

0 500 1000 1500 20000.0

0.2

0.4

0.6

0.8

1.0

FWHM=72ps

Nor

mal

ized

Cou

nts

Time[ps]

Ti:Ti:Saphire fs Saphire fs pulsed laser pulsed laser (710nm)(710nm)

PP QQ-- SS

PP AADD

11

TACSTARTSTART STOPSTOP

DISCRDISCR.DISCRDISCR.

AnalysisAnalysis

Attenuation FiltersAttenuation Filters

PQ-SPAD Timing Resolution: 50psPQ-SPAD Timing Resolution: 50ps

PQ-SPAD2PQ-SPAD2

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DistanceDistance

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ModelModel

High resolution Camera:High resolution Camera:20cm x 20cm view20cm x 20cm view

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Depth Map ExampleDepth Map Example

•• Lateral resolution:Lateral resolution:–– 64x64 pixels64x64 pixels

•• Depth resolution:Depth resolution:–– 1.3mm (1.3mm (wcwc))

•• Range:Range:–– 3.75m3.75m

[Niclass and Charbon, ISSCC 2005][Niclass and Charbon, ISSCC 2005]

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Companion TechniquesCompanion Techniques

•• Multi-exposure super-resolution techniquesMulti-exposure super-resolution techniques–– Microscanning Microscanning (x-/y- (x-/y- piezo piezo elements)elements)–– S/R algorithm (LCAV, Prof. Vetterli)S/R algorithm (LCAV, Prof. Vetterli)

•• CMOS time-to-digital-converter (TDC)CMOS time-to-digital-converter (TDC)IntegrationIntegration–– Current resolution: 100ps (0.8Current resolution: 100ps (0.8µµm)m)–– Target (under test): 25ps (0.18Target (under test): 25ps (0.18µµm)m)

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Microscanning Microscanning MechanismMechanism

58µm

7µm

58µm(+29µm, 0)

(0,-29µm)

(-29µm, 0)

(0,+29µm)

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CMOS Time-to-Digital-ConverterCMOS Time-to-Digital-Converter

•• CMOS TDCCMOS TDC(RSUT)(RSUT)

•• Resolution:Resolution:100ps100ps

•• Accuracy:Accuracy:<30ps<30ps

•• Clock:Clock:40MHz40MHz

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3D Performance Summary3D Performance Summary

<1mW<1mW

100ps100ps

50MHz50MHz

100mW/0.5mW100mW/0.5mW

268ps268ps

0.15 ~ 4m0.15 ~ 4m

1.8mm1.8mm

32x3232x32

250mW/0.7mW250mW/0.7mWOpt. peak/average powerOpt. peak/average power

100ps100psLight pulse widthLight pulse width

350ps350psSingle measurementSingle measurementuncertainty uncertainty σ(τ)σ(τ)

40MHz40MHzRepetition rateRepetition rate

< 6mW< 6mWChip power dissipationChip power dissipation

0.15 ~ 3.75m0.15 ~ 3.75mAxial rangeAxial range

1.3mm1.3mmW.C. axial uncertainty W.C. axial uncertainty σ(σ(dd))

(10k (10k measmeas.).)

64x6464x64ParameterParameter

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2D Imaging2D Imaging

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CCDs CCDs (e.g.)(e.g.)

RO

W D

EC

OD

ER

A/D

AMPLIFIERS, S/H

aMUX

CH

AR

GE

CO

UP

LE

D P

AT

HC

HA

RG

E C

OU

PL

ED

PA

TH

CO

L SEL

CO

L SELDD

Three conversions:Three conversions:

Photons → q → V → D

Five sources of noise:Five sources of noise:

Shot, 1/f, kT/C, read-out, ADC

q

V

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Conventional CMOS APS (e.g.)Conventional CMOS APS (e.g.)

RO

W D

EC

OD

ER

A/D

AMPLIFIERS, S/H

aMUX

ROW SELECTROW SELECT

PIX

EL

RE

AD

OU

TP

IXE

L R

EA

DO

UT

CO

L SEL

CO

L SELDD

R

VV22

VV11

Three conversions:Three conversions:

Photons → q → V1,V2 → D

Five sources of noise:Five sources of noise:

Shot, 1/f, kT/C, read-out, ADC

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Performance of InterestPerformance of Interest

•• Dynamic rangeDynamic range–– Ratio between the smallest detectable and maximumRatio between the smallest detectable and maximum

detectable intensitydetectable intensity

•• SNRSNR–– Ratio between signal due to intensity and noiseRatio between signal due to intensity and noise

•• FPSFPS–– Frames-per-secondFrames-per-second

•• PitchPitch–– Distance between pixelsDistance between pixels

•• …… and FPN, smearing, blooming, color, etc. and FPN, smearing, blooming, color, etc.

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Limiting FactorsLimiting Factors

•• Miminum Miminum # detectable photons# detectable photons

•• NoiseNoise–– Read-out noiseRead-out noise

–– kTkT/C noise/C noise

–– 1/f noise1/f noise

•• SaturationSaturation–– Limited number of available chargesLimited number of available charges

•• Speed (10kfps)Speed (10kfps)

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Imagers Based on SPADsImagers Based on SPADs

RO

W D

EC

OD

ER

dMUX

ROW SELECTROW SELECT

PIX

EL

RE

AD

OU

TP

IXE

L R

EA

DO

UT

CO

L SEL

CO

L SELDD

One conversion:One conversion:

Photons → D

SPAD

One and 1/2 source of noise:One and 1/2 source of noise:

Shot, DCR, (digital noise)

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SPAD Arch Limiting FactorsSPAD Arch Limiting Factors

•• Miminum Miminum # detectable photons# detectable photons–– Limited by DCRLimited by DCR

•• NoiseNoise–– Read-out noiseRead-out noise–– kTkT/C noise/C noise–– 1/f noise1/f noise

•• SaturationSaturation–– Limited by dead time and read-out bandwidthLimited by dead time and read-out bandwidth

•• SpeedSpeed–– Shown 250kppsShown 250kpps

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New ChallengesNew Challenges

Departure from amplitude based imagerDeparture from amplitude based imager Therefore:Therefore:

–– Local evaluation of intensityLocal evaluation of intensity–– Intensity storageIntensity storage–– Digital noiseDigital noise–– Low-power operationLow-power operation

ExampleExample::–– R rowsR rows–– share column of bandwidth B share column of bandwidth B ≤≤ 1/ 1/ttDD

Then, in average every pixel has B/R bandwidth, thusThen, in average every pixel has B/R bandwidth, thusdynamic range dynamic range ≈≈ 20{Log(B/R)-Log(DCR)} 20{Log(B/R)-Log(DCR)}

Architecture directly influences Performance Architecture directly influences Performance

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Importance of Pixel TimingImportance of Pixel Timing

(FWHM)

Performance:Performance:•• Pertiming Pertiming jitter: < 50psjitter: < 50ps•• dead time : 32nsdead time : 32ns

Potential impact:Potential impact:•• SaturationSaturation•• SmearingSmearing

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Experimental Setup for ImagerExperimental Setup for Imager

SPAD Array

Multiplexer

Counter

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DCRDCR

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Sensitivity and Dynamic RangeSensitivity and Dynamic Range

120dB

Cou

nt [H

z]

Optical Intensity [W/cm2]

71dB

# e-

[-]

103

104

105

106

102

CMOS APS

101

107

108

10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3

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LinearityLinearity

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Photon Detection ProbabilityPhoton Detection Probability

400 500 600 700 800 900 1000

10-3

10-2

10-1

Pho

ton

Det

ectio

n P

roba

bilit

y [1

]

Wavelength [nm]

12% @ 635nmPeak: 26% @ 460nm

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ExampleExample

High resolution Camera:High resolution Camera:20cm x 20cm view20cm x 20cm view

SPAD Camera:SPAD Camera:32x32pixels32x32pixels

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High Speed ExampleHigh Speed Example

FeaturesFeatures–– No measurable thermal noise (Poisson noiseNo measurable thermal noise (Poisson noise

dominates)dominates)–– No measurable cross-talk, blooming, smearingNo measurable cross-talk, blooming, smearing

4µs 10µs 25µs 100µs 1ms

[Niclass, Rochas, Besse, Popovic, and Charbon, Transducers 2005][Niclass, Rochas, Besse, Popovic, and Charbon, Transducers 2005]

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High Sensitivity ExampleHigh Sensitivity Example

Deep TwilightDeep Twilight Full MoonFull Moon Quarter MoonQuarter Moon StarlightStarlight

2 lx2 lx 22××1010-1-1 lx lx 22××1010-2-2 lx lx 22××1010-3-3 lx lx

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Intensity Performance SummaryIntensity Performance Summary

44µµssMinimum Integration TimeMinimum Integration Time

350Hz/75Hz350Hz/75HzDark Count Rate (DCR) T=room/0Dark Count Rate (DCR) T=room/0ooCC

1.1%1.1%Pixel Pixel FillfactorFillfactor

1-26%1-26%Photon Detection Probability (PDP)Photon Detection Probability (PDP)

1.3x101.3x10-3 -3 LxLxOptical Intensity @ SNR=0dBOptical Intensity @ SNR=0dB

120dB120dBMaximum Pixel Dynamic RangeMaximum Pixel Dynamic Range

ValueValueParameterParameter

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ConclusionsConclusions

•• Significance and applications of 3DSignificance and applications of 3Dimagingimaging

•• Fabricated 1k pixel SPAD array inFabricated 1k pixel SPAD array instandard CMOS technologystandard CMOS technology

•• psec (psec (µµm) accuracy reached with mWm) accuracy reached with mWlaser sourcelaser source

•• Chip power dissipation <1mWChip power dissipation <1mW•• High sensitivity, dynamic range, andHigh sensitivity, dynamic range, and

linearity for 2D applicationslinearity for 2D applications

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Future WorkFuture Work

•• VGA pixel arraysVGA pixel arrays

•• Count / Read-out parallelizationCount / Read-out parallelization

•• Pixel-level and column-level time-to-digitalPixel-level and column-level time-to-digitalconverters (TDCs)converters (TDCs)

•• Pitch reductionPitch reduction

•• On-chip basic computationOn-chip basic computation

•• ColorColor

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Future DirectionsFuture Directions

•• qCADqCAD

•• Single photon telecommunicationsSingle photon telecommunications

•• Accelerated DNA sequencingAccelerated DNA sequencing

•• Laserless Laserless ultra-short range quantumultra-short range quantumcommunication and computingcommunication and computing

•• Data managementData management

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http://aqua.http://aqua.epflepfl..chch