cmpen 411 vlsi digital circuits lecture 01: introduction

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CMPEN 411 L01 S1 CMPEN 411 VLSI Digital Circuits Lecture 01: Introduction Kyusun Choi CMPEN 411 Course Website link at: http://www.cse.psu.edu/~kyusun/teach/teach.html [Adapted from Rabaey‟s Digital Integrated Circuits, Second Edition, ©2003 J. Rabaey, A. Chandrakasan, B. Nikolic]

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Page 1: CMPEN 411 VLSI Digital Circuits Lecture 01: Introduction

CMPEN 411 L01 S1

CMPEN 411VLSI Digital Circuits

Lecture 01: Introduction

Kyusun Choi

CMPEN 411 Course Website link at: http://www.cse.psu.edu/~kyusun/teach/teach.html

[Adapted from Rabaey‟s Digital Integrated Circuits, Second Edition, ©2003 J. Rabaey, A. Chandrakasan, B. Nikolic]

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How Do the Pieces Fit Together?

I/O systemInstr. Set Proc.

Compiler

OperatingSystem

Application

Digital Design

Circuit Design

Instruction SetArchitecture

Firmware

Coordination of many levels of abstraction

Under a rapidly changing set of forces

Design, measurement, and evaluation

Datapath & Control

Memory

system

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Course Contents

Introduction to digital integrated circuits

CMOS devices and manufacturing technology. CMOS logic gates and their layout. Propagation delay, noise margins, and power dissipation. Combinational (e.g., arithmetic) and sequential circuit design. Memory circuit design.

Course goals

Ability to design and implement CMOS digital circuits and optimize them with respect to different constraints: size (cost), speed, power dissipation, and reliability

Course prerequisites

EE 310. Electronic Circuit Design

CMPEN 471. Logic Design of Digital Systems

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Background from CMPEN 471 and EE 310

Basic circuit theory

resistance, capacitance, inductance

MOS gate characteristics

Hardware description language

VHDL or verilog

Use of modern EDA tools

simulation, synthesis, validation (e.g., Synopsys)

schematic capture tools (e.g., LogicWorks)

Logic design

logical minimization, FSMs, component design

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Course Structure

Design and tool intensive class

Industrial Standard toolset for layout

- Online documentation and tutorials

HSPICE for circuit simulation

unix (Sun/Solaris) operating system environment

Lectures:

2 weeks on the CMOS inverter

3 weeks on static and dynamic CMOS gates

2 weeks on C, R, and L effects

2 week on sequential CMOS circuits

2 weeks on design of datapath structures

2 weeks on memory design

1 week on design for technology scaling, trends

Schedule is on-line syllabus

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What is the most important invention for the last 50 years?

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The evolution of IC

When was the first transistor invented?

A. 1945 B. 1947 C. 1951 D. 1958

The inventors were in which company?

A. IBM B. Bell Lab C. TI D. Motorola

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The evolution of IC

When was the first transistor invented?

Modern-day electronics began with the invention in 1947 of the transfer resistor, also known as the bi-polar transistor by Bardeen et.al at Bell Laboratories

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The evolution of IC

When was the first IC invented?

A. 1956 B. 1958 C. 1959 D. 1961

The inventor was with which company?

A. IBM B. Bell Labs C. TI D. Motorola

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The evolution of IC

When was the first IC (integrated circuit) invented?

In 1958 the integrated circuit was born when Jack Kilby at Texas Instruments successfully interconnected, by hand, several

transistors, resistors and capacitors on a single substrate

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Transistor Revolution

Transistor –Bardeen et.al. (Bell Labs) in 1947

Bipolar transistor – Schockley in 1949

First bipolar digital logic gate – Harris in 1956

First monolithic IC – Jack Kilby in 1958

First commercial IC logic gates – Fairchild 1960

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MOSFET Technology

MOSFET transistor - Lilienfeld (Canada) in 1925 and Heil (England) in 1935

CMOS – 1960‟s, but plagued with manufacturing problems (used in watches due to their power limitations)

PMOS in 1960‟s (calculators)

NMOS in 1970‟s (4004, 8080) – for speed

CMOS in 1980‟s – preferred MOSFET technology because of power benefits

BiCMOS, Gallium-Arsenide, Silicon-Germanium

SOI, Copper-Low K, strained silicon, High-k gate oxide...

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CMPEN 411 VLSI Digital Circuits

Kyusun Choi

VLSI Chip Pictures

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Fig. 12 Increase in wafer sizes, showing the increased number of dice (chips) per wafer available when increasing the wafer area. (a) 100-mm (4-in.) wafer. (b) 150-mm (6-in.) wafer. (c) 300-mm (12-in.) wafer. (Intel Corp.)

Fig. 7 Person with lint-free garments in a vertical laminar-flow clean room forintegrated-circuit fabrication with 300-mm (12-in.) wafer. (Personnel do not handle wafers in this manner. This was done just for the photograph.) (Intel Corp.)

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Fig. 1. Cross-section of a 64-bit

high-speed processor in a 90nm

technology. (Courtesy: IBM)

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Programmable Logic Gate Array

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Programmable Logic Gate Array

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Programmable Logic Gate Array

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Programmable Logic Gate Array

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Programmable Logic Gate Array

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Programmable Logic Gate Array

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Worldwide Semiconductor RevenueSource: ISSCC 2003 G. Moore “No exponential is forever, but „forever‟ can be delayed”

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Transistors shipped per year

How many transistors you can buy with 1$?

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Average Transistor Price by Year

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1’’ Wafer in 1964 vs. 300 mm (12 ”) Wafer in 2003

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The IC in 1961 vs. Intel Pentium 4 in 2004

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Moore’s Law

In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 months (i.e., grow exponentially with time).

Amazingly visionary – million transistor/chip barrier was crossed in the 1980‟s.

2300 transistors, 108 KHz clock (Intel 4004) - 1971

16 Million transistors (Ultra Sparc III)- 1998

42 Million, 2 GHz clock (Intel P4) - 2001

125 Million, 3.4Ghz (Intel P4 Prescott)- 2004 Feb 02

234 Million, IBM Cell processor, 2005

1.7 Billion, 1.6Ghz (Intel Itanium-2)-2006, Sept.

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Moore’s Law plot (from his original paper)

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Moore’s Law in Microprocessors

40048008

80808085 8086

286

386

486Pentium® proc

P6

0.001

0.01

0.1

1

10

100

1000

1970 1980 1990 2000 2010

Year

Tra

nsis

tors

(M

T)

2X growth in 1.96 years!

# transistors on lead microprocessors double every 2 years

Courtesy, Intel

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# of Transistors per Die

Source: ISSCC 2003 G. Moore “No exponential is forever, but „forever‟ can be delayed”

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Intel 4004 Microprocessor (10000 nm) 1971

2300 transistors

13.5 mm2

108k Hz

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Intel Pentium 4 –Prescott (2004)

90 nm

Area: 112 mm2

125 M transistors

L1-Instruction: 16K

L1-Data: 16K

L2: 1MB

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Two chips you are seeing today

Microprocessor ASIC (Application Specific IC)

366MHz 40mm2 3.65M 40Mhz 10 mm2 500K

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IBM Cell Overview

IBM/Toshiba/Sony joint project - 4-5 years, 400 designers, 3/9/2001, $400M, 234 million transistors, 4+ Ghz, 256 Gflops (billions of floating pointer operations per second)

P

P

U

S

P

U

S

P

U

S

P

U

S

P

U

S

P

U

S

P

U

S

P

U

S

P

U

M

I

C

R

R

A

C

B

I

C

MIB

Cell Prototype Die (Pham et al, ISSCC 2005)

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State-of-the Art: Lead Microprocessors

Pentium 4 180 nm (2001) 1.7 G Hz 42 M transistors 217 mm2

Pentium 4 130 nm (2003) 3.2G Hz 55 M Transistors 131 mm2

Pentium 4 90 nm (2004) 3.4 Hz 125 M Transistors 112 mm2

Pentium on 65nm (2005/2006) 250 Million

Pentium on 45nm (2007) 400 to 500 Million

Freq

(HZ)

Transistors Die size

mm2

Power Date

Server IBM Power 4+ 1.7G 180M 267 N/A 2003

Itanium 2 1.5G 410M 374 130W 2003

IBM Power 5 2G 276M 389 N/A 2004/2

PC IBM Power PC970 1.8G 58M 118 42W 2003/6

Pentium 4 3.2G 55M 131 82W 2003/6

AMD Athlon 64 2.2G 105M 192 89W 2003/9

Pentium 4 (Prescott)

3.4G 125M 112 103W 2004/2

(All use 0.13 um technology except Pentium 4 – Prescott, which uses 90 nm tech)

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State-of-the Art: Lead Microprocessors (up to date)

300mm wafer and Pentium 4 IC. Photos courtesy of Intel.

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Die Size Growth

40048008

80808085

8086286

386486

Pentium ® procP6

1

10

100

1970 1980 1990 2000 2010

Year

Die

siz

e (

mm

)Die size grows by 14% to satisfy Moore’s Law

Courtesy, Intel

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Clock Frequency

Lead microprocessors frequency doubles every 2 years

P6

Pentium ® proc486

3862868086

8085

8080

8008

40040.1

1

10

100

1000

10000

1970 1980 1990 2000 2010

Year

Fre

qu

en

cy (

Mh

z)

2X every 2 years

Courtesy, Intel

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Power Dissipation

P6Pentium ® proc

486

386

2868086

80858080

80084004

0.1

1

10

100

1971 1974 1978 1985 1992 2000

Year

Po

wer

(Watt

s)

Lead Microprocessors power continues to increase

Courtesy, Intel

Power delivery and dissipation will be prohibitive

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Power Density

4004

8008

8080

8085

8086

286386

486Pentium® proc

P6

1

10

100

1000

10000

1970 1980 1990 2000 2010

Year

Po

wer

Den

sit

y (

W/c

m2)

Hot Plate

Nuclear

Reactor

Rocket

Nozzle

Power density too high to keep junctions at low temp

Courtesy, Intel

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Power Density

4004

8008

8080

8085

8086

286386

486Pentium® proc

P6

1

10

100

1000

10000

1970 1980 1990 2000 2010

Year

Po

wer

Den

sit

y (

W/c

m2)

Hot Plate

Nuclear

Reactor

Rocket

Nozzle

Power density too high to keep junctions at low temp

Courtesy, Intel

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ITRS

The “International Technology Roadmap for Semiconductors” (ITRS) is the industry‟s prediction for the future of semiconductors.

It is mostly an extrapolation of existing trends.

The ITRS is often “slow”.

http://public.itrs.net

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Technology Directions: “Old” SIA Roadmap

Year 1999 2002 2005 2008 2011 2014

Feature size (nm) 180 130 100 70 50 35

Mtrans/cm2 7 14-26 47 115 284 701

Chip size (mm2) 170 170-214 235 269 308 354

Signal pins/chip 768 1024 1024 1280 1408 1472

Clock rate (MHz) 600 800 1100 1400 1800 2200

Wiring levels 6-7 7-8 8-9 9 9-10 10

Power supply (V) 1.8 1.5 1.2 0.9 0.6 0.6

High-perf power (W) 90 130 160 170 174 183

Battery power (W) 1.4 2.0 2.4 2.0 2.2 2.4

http://public.itrs.net

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Technology Scaling

Technology shrinks by ~0.7 per generation

With every generation can integrate 2x more functions on a chip; chip cost does not increase significantly

Cost of a function decreases by 2x

But …

How to design chips with more and more functions?

Design engineering population does not double every two years…

Hence, a need for more efficient design methods

Exploit different levels of abstraction

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Design Abstraction Levels

SYSTEM

GATE

CIRCUIT

VoutVin

CIRCUIT

VoutVin

MODULE

+

DEVICE

n+

S D

n+

G

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Design Productivity Crisis

We need to improve the productivity via design automation

1996: 100 person in P6 team

2007: 1600 person in P10 team

Question: ?? Person in P38 team ?

Answer: Every inhabitant of our planet

Year Tech. (nm)

Complexity Frequency 3 Yr. Design Staff Size

Staff Costs

1997 350 13 M Tr. 400 MHz 210 $90 M

1998 250 20 M Tr. 500 MHz 270 $120 M

1999 180 32 M Tr. 600 MHz 360 $160 M

2002 130 130 M Tr. 800 MHz 800 $360 M

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Major Design Challenges

Microscopic issues

ultra-high speeds

power dissipation and supply rail drop

growing importance of interconnect

noise, crosstalk

reliability, manufacturability

clock distribution

Macroscopic issues

time-to-market

design complexity (millions of gates)

high levels of abstractions

reuse and IP, portability

systems on a chip (SoC)

tool interoperability

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Testing and Faults

1/7/2015 71L12: Testing

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Chip Technology

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Chip Technology

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Chip Technology

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Chip Technology

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Chip Technology

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Chip Technology

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Chip Technology

GHz frequency

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Wafer Cost

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Chip Yield

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Testing and Faults

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Testing and Faults

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Testing and Faults

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Testing and Faults

1/7/2015 96L12: Testing

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Wafer Cost

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Yield = 6/12 = 50% Yield = 57/64 = 89%

Wafer Cost = $10,000

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Wafer Cost

1/7/2015 98L12: Testing

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Wafer Cost

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Wafer Cost

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Wafer Cost

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Wafer Cost

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Wafer Cost

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Testing and Faults

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Fault Cost:

Wafer $0.01 - $ 0.1

Packaged Chip $0.1 - $1

Board $1 - $10

System $10 – 100

Field $100 - $1000

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Testing and Faults

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Pentium Bug:

824 633 702 441.0 X 1/ 824 633 702 441.0

= 0.999 999 996 274 709 702

Due to faulty floating point number divide look-up table

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Next Lecture and Reminders

Next lecture

Design metrics

- Reading assignment – 1.3

Reminders