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CNU Planar Hall Resistance - Thermal stability & field sensitivity : Indirect exchange coupling, FM/AFM - Increasing active area : Hybrid AMR/PHR sensor - Wearable biochip sensor: Flexible MR substrate -Applications : o Biochip sensors o Single bead magnetometry o Ferrofluid driplet o Magnetic phase transition

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Page 1: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

CNU Planar Hall Resistance- Thermal stability & field sensitivity :

Indirect exchange coupling, FM/AFM

- Increasing active area :

Hybrid AMR/PHR sensor

- Wearable biochip sensor:

Flexible MR substrate

-Applications :

o Biochip sensors

o Single bead magnetometry

o Ferrofluid driplet

o Magnetic phase transition

Page 2: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

V. Results Magnetoresistive effects

AMR/PHR

Voltage in magnetic materials

AMR/PHR

II. PHR

Page 3: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

-Navel Research Lab.- 80x5 µm2 (GMR)- 1 bead (2.8 µm)- 2002 ( 1998)

-U. Bielefeld-70 µm diameter-3 beads (0.86 µm)-2002

-Stanford U. -1x1 µm2 (GMR)-1 bead (2.8 µm)-2002

- INESC-2x6 µm2 (GMR)-1 bead (2 µm)-2003

-Philips Research-3x100 µm2

-10 beads (300 nm)-2005

-IMEC-1 bead (300 nm)-2002

Review article in J.MMM, 293 (2005) 702

-Tokyo Inst. of Tech. - Hall effect in InSb-3x5 µm2 (2005)

IEEE . Magn. 41 (2005) 3661

- CNU -- PHR (2006)

GMR sensors

Giant magnetoresistance in magnetic multilayers《Nobel Prize in Physics (2007)》

Basic patent : US 2002/0119470 A1 (NRL), Sensor patents 13

Developed magnetic sensors II. PHR

Page 4: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Single layer (France)

Bilayers (Denmark)

Spin-valve Structure (Korea, 2006)

SiO2

TaNiFeIrMn

NiFe

SiO2

TaNiFeCu

NiFeIrMn

SiO2

NiFe

L. Ejsing, et. al. . Magn. Magn. Mater. 293, 677 (2005)

F. Nguyen Van Dau et. al, Sensors and Actuators A, 53, 256 (1996)

PHR sensor structure [~ 2009) II. PHR

Page 5: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Exchange bias in NiFe/Spacer/CoO bilayer

J. Gkemeijer et al., Phys. Rev. Lett., 79, 4270 (1997)

NiFe 30 nm

CoO 30 nm

Spacer

Motivation

CNU: Trilayer structure (2009)

Role of Antiferromagnetic layer

Enhancement of field sensitivity Enhancement of thermal stability

Page 6: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Reducing shunt current

cm 1.7 :Cucm 20 : NiFe

cm 210 :IrMn

III. Sensitivity

V/Oe 12 V/Oe 0.6 : S

valve)-(spin Oe 20(bilayers) Oe 125

ex

ex

HH V/Oe 0.6 V/Oe 9.0 : S

Cu1.2A) :(trilayers % 60valve)(spin % 30

active

active

II

10-2010-0054238 특허출원, T. Hung et al, JAP 107, 09E715 (2010)

Page 7: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

ᄋNano-Micro-sezed sensor

: Localized information & approaching time

ᄋ Average over overall sample volume

Sensor arrays or Large sensor area

Active sensor area

Page 8: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

R : Radius W : width

r

w

CNU hybrid PHR & AMR III. Sensitivity

- US2011/0175605A1- 한국출원번호 10-2010-0005657- S. Sun et al, Solid state commun. 2011

V/Oe 320 V/Oe 12 : S

Test Materials : NiFe(50 nm)/MnIr(10 nm)

Self-balancing (Whistone-bridge)

Page 9: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

PHR effect

AMR effect

0 2 4 6 80.0

0.5

1.0

1.5

2.0

2.5

3.0

Out

put V

olta

ge (m

V)

R/w ratio of Ring

R : Radius W : width

R

w

-400 -300 -200 -100 0 100 200 300 400-1000

-500

0

500

1000

1500

Vol

tage

(V

)H (Oe)

r = 150 μmw = 20 μm

Ring type sensorTest Materials : NiCo(10 nm)/MnIr(10 nm)

Enhance the output signal with no hysteresis

AMR/PHR performance : ring type

Page 10: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Multi-ring sensor elements

Off-set adjustment

Page 11: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Flexible organic substrates

Embedded electrodes

Solar Energy Materials & Solar Cells 95 (2011) 1339

Printed electrodes

KN Eindhoven, The Netherlands

June ,2010 IEEE Xplore,KIMM, Korea

Page 12: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Flexible organic GMR substrates

(Co/Cu)n deposition on polyester

Appl. Phys. Lett. 69 (1992) 3092

Multilayers & electrode : Sputtering

Weak adhesion

Page 13: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Hybrid fabrication procedures

Page 14: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

(c)(b)(a) PEN - bilayer

3.387 nm

glass - bilayer

694.671 pm

Si - bilayer

rms roughness -180.821 pm

AFM PEN (Polyethylene naphthalin) film stability

Temperature dependence of PHR

Page 15: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

16 14 12 10 8 6 4 2 00

15

30

45

60

75

90

Distance,D (mm)

Ang

le,

()

PEN film bending

Page 16: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

0 10 20 30 40 50 60 70 80 90-10

-5

0

5

10

15

20

25

Vol

tage

(mV

)

Angel,()

concave convex

D=16 mmD=8 mm

D=0 mm

D=16 mm D=8 mm D=0 mm

Electrode stability: Resistance variation

Page 17: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Electrode stability: Resistance variation

0 15 30 45 60 75 90-20

-15

-10

-5

0

5

10

15

20

Angel,()

Vol

tage

(mV

)

Au electrode

Ag paste

Contact lost

D=16 mm D=8 mm D=0 mm

Page 18: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

-200 -150 -100 -50 0 50 100 150 200

-3

-2

-1

0

1

2

3

4 0 15 30 45 0

Vol

tage

(mV

)

Field (Oe)

Electrode stability: Resistance variation

0 100 200 300 400 500 600

0

2

4

6

8

10

Vol

tage

(V)

Time (sec)

0 200 4000.44

0.46

0.48

0.50

Θ = 15°

30°45°

15°75°

60°

Multilayers electrodes : Ta/IrMn/NiFe/Ta/PEN

Page 19: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

PEN film – Electrode (Au)

PEN film – Electrode - bend

0 20 40 60 80

0

100

200

300

400

Hig

ht (n

m)

um

약 200 nm

Page 20: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity
Page 21: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity
Page 22: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Magnetic sensor performanceResearch group Sensor type Size (μm2) Sensitivity

(μV/Oe·mA) Label size Biological detection

Molecular resolution

Stanford U. (Shan X. Wang)USA

Rectangle GMR (SV) Strip (32)

TMR

12 × 310 × 2.593 × 1.5

-

35.8-

2.8 μm (Dynabead)100 nm (SAF)

50 nm -3 μm (MNT)50 nm (Macs)

16 nm (MFe2O4)

NoYesNoYesNo

10 pM5 fM (2010)

(Protein)(Biosen. Bioelec. 25

(2010) 2051.)

INESC-MN(P. Freitas) Portugal

Rectangle GMR(SV) array (32)

TMR

80 × 2.540 × 2.515 × 2

35.842.4

130 nm250 nm2.8 μm

NoYesNo

1 fM(2002)(DNA)

(Biosen. Bioelec. 24 (2009) 2690.)

DTU(M. F. Hansen) Denmark PHR-Cross 10 × 10

40 × 40 3.2 2 and 2.8 μm(Dynabead) No

Bielefeld U.(Reiss) Germany

TMR(Elliptical) (20)

GMR (SV) spiral

0.4 × 0.11800(dia.)1(width)

-

16 and 50 nm(Co)2.0 μm

(Dynabead)350 nm and 860 nm

(Bangs)

NoYes

800 fM(2008)(Protein)

(Biosen. Bioelec. 19 (2004) 1149.)

U.Minnesota(J.P. Wang) USA GMR (SV) 80 × 40 600 12 nm (FeCo) Yes

~zM (2009)(Protein)

(Angew. Chem. Int. Ed. 48 (2009) 2764.)

NRL(M.M. Miller) USA AMR (Ring) 5 (dia)

3 (width) 15.2 4.3 μm (NiFe) No

SFIT(P.A. Besse) Swiss Silicon Hall sensor 2.4 × 2.4 17.5 2.8 μm

(Dynabead) No

CNU(C.G. Kim) Korea

PHRHybrid ring

3 × 3300 (dia)5 (width)

12.0

1690

1 and 2.8 μm(Dynabead) No

Philips Research Europe(W.U. Dittmer)

NetherlandsGMR (SV) Strip - - 300 and 500 nm

(Ademtech) Yes

0.8 pM(2008)(Protein)

(J. Immunological Meth. 338 (2008)

40.)

Page 23: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

1D assay application (Cardiac Troponin I (cTnI)

Diffusion processAnalyte binding

Page 24: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

-300 -250 -200

1.35

1.40

1.45

1.50

1.55

Base Signal Mag Bacteria_1 Mag Bacteria_2 Mag Bacteria_3 Mag bead Mag bead remove

Vol

tage

(V)

Field (Oe)

-300 -200 -100 0 100 200 300

0.0

0.5

1.0

1.5

2.0

0 50 100 150 200 250 300

1.44

1.46

1.48

1.50

1.52

Vol

tage

(mV

)

Time (sec)

Bacteria spay

Bead drop

Bead wash

2D assay: Bacteria detection

Magnetosomes

Page 25: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

2D assays

Page 26: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity
Page 27: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

The voltage change during the repeated drop and washing of bead

Page 28: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

-fluidic channel integrated with sensor

Punch card( ~ 1980s)

See poster: p. 71

Page 29: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

Nanosized Spin-Crossover Materials

TEM image of 250 ± 40 nm nanoparticles and the corresponding size histogram. (The largest dimension of each nanoparticle was used for the statistics.)

Page 30: CNU Planar Hall Resistance - KOCWelearning.kocw.net/contents4/document/wcu/2012/Chungnam/... · 2013. 7. 26. · CNU Planar Hall Resistance - Thermal stability & field sensitivity

(a) The voltage change associated with change of properties of SCO particles. (b) The diamagnetic/paramagnetic phases are characterised by a lower/higher voltage. (c) The insets show the colour change of the particles: pink in diamagnetic low spin state (d) and white in the paramagnetic high spin phase. (b) Reflectance measurements ( = 550 ±40 nm) (e) of the [Fe(hptrz)3](OTs)2 SCO nanoparticles on the sensor surface.