Eugene Technology 2

Company Overview

Company name Eugene Technology Co., Ltd.

Established 05 JAN, 2000

CEO Pyung Yong Um

Capital / MRKT CAP \6.14B / \280.6B (as of May 12th)

Address 209-3 Chugeri, Yangji myun, Cheoin gu, Yongin, Kyunggi do, Korea

Main Products Thermal LP-CVD & Plasma Process

Home Page www.eugenetech.co.kr

Eugene Tech is R&D oriented company, which is specialized in Single-Wafer Process Solution for

Diffusion area including Thermal LPCVD and Plasma Treatment processes.

Up coming 450mm Convergence, foreseeable increased needs on Single-Wafer Process!

Name Position Major Career

PY UM CEO Hynix, Teradyne, Brooks Auto.

Dr. YW KIM CTO PhD Plasma Eng., VP R&D in Hynix

SW SHIN Exec Dir 20 Yrs in Hynix R&D

DJ KIM Exec Dir 19 Yrs in Samsung & Hynix

Dr. JK KIM Exec Dir 20 Yrs in Hynix

SH WOO Exec Dir 14 Yrs in Hynix R&D

DK LEE Director 15 Yrs in Samsung R&D

YD KIM Manager 15 Yrs in Samsung & Hynix R&D

HW KIM Manager 10 Yrs in Hynix R&D

Dr. Sergey Z Manager PhD Moscow Power Eng. Institute, LG Electric

200/300mm Single wafer type ; LPCVD Nitride/Oxide/Poly Process

JDA with Hynix

JDA with SAMSUNG

300mm Single wafer type ;

Plasma Nitridation/Oxidation Process

200/300mm Single wafer type ; LPCVD Nitride/Poly Process

300mm Single wafer type ;

Plasma Nitridation/Oxidation Process

R&D Key MemberJDA Engineering

Manpower

over 80%

Eugene Technology 3

Thermal LPCVD

Blue JayTM

Plasma Treatment System

Albatross™

Key Products & its Processes

Dual Rotated Spiral Antenna

ICP Antenna

Quartz Cylinder

Low Electron Temperature ~ 1.0 eV Plasma Damage Free

High Density 4E+12

Wide Process Windows2 Zone 1 T.C Heater (100℃~800℃)

Metal Contamination Free

Eugene Tech-patented Plasma Source Very Low Thermal budget

Excellent Uniformity

Less particle generated

Diverse Process Applications

Very Thin Layer Deposition

Nitride /Oxide /Poly Nitridation /Oxidation

Eugene Technology 4

Eugene Technology’s patented Plasma technology

1ST Antenna Coil

(PCW Cooling)2ND Antenna Coil

(PCW Cooling)

Gas Inlet Port

Quartz Tube

Antenna

Support

ICP(Inductively Coupled Plasma)Source Properties

. High Plasma Density : > 4.0E12 atoms/cm3

. Plasma Damage Free : ~ 1 ev

. Heater : 100℃~800℃

. N-Concentration range 3.3 ~30 atomic% Arial

. Patent No. : 10-0800401, 10-0800396,

Dual Rotated Spiral Antenna(DuRoSA)

Eugene Technology 5

Key Products & its Processes

Cyclic CVDVarious Spacer Deposition available with

- Excellent Thickness Uniformity

- Good Loading Effect

- Excellent Step Coverage

Very Low Temperature Deposition

- 50℃ ~ 450℃- Suppress Thermal Degradation

Excellent Wet Etch Rate

- Thermal Ox < Cyclic CVD < HTO

(0.5Å /Sec)* (1.0Å /Sec)* (1.9Å /Sec)*

*300:1 BOE

Application for Sacrifice Layer

- Wet Etch Rate Controllability

by Densification process technique

- Patented process and system

High Throughput

- up to 180WPH

Easy MaintenanceSilicon Nitride Silicon Oxide

Eugene Technology 6Nitride DRAM

Nitride LOGIC

Oxide FLASH

Poly FLASH

Nitridation DRAM

Nitridation FLASH

Oxidation FLASH

Oxidation DRAM

Poly DRAM

Poly LOGIC

Expanding to

12 layers

2010 2011 2013 ~ 2012

Expanding to

23 layers

Expanding to

45 layers

Cyclic CVD Seeding Poly

Cyclic CVD SiN, SiO2 Logic, Flash, DRAM

Oxide LOGIC

2009~ 2008

5Xnm 4Xnm 3Xnm 2Xnm

12 layers

23 layers

45 layers

Application Expansion

(LPCVD & Plasma)

6 layers

Expanding to

75 layers

Expanding to

100+ layers

75 layers

100+ layers

Applications;

Coping with Device Geometry Scaling Down & Customer’s Needs

Eugene Technology 7

Domestic & Global Activities

Eugene

Technology.,

Inc., Taiwan

Eugene

Technology.,

Inc., USAEUROPE

CHINA

Eugene

Technology.,

Ltd., Korea

NAND

Logic

Logic

DRAM

DRAM

DRAM

NOR

450mm

Logic

Logic

NAND

Logic

With our Single-Wafer Process technology & knowhow, we can deliver optimal customized process

solutions to various clients.

As the device geometry scaling down, demand on less thermal exposure & precise Single-Wafer process

will prevail.

And, Eugene Technology is certainly one of the solution providers.

Eugene Technology 8

Capability

450mm LPCVD Introduction

One Process Chamber

with

Dual process capability

Poly and SiN

------------------------------

450mm LPCVD System

Very Low Thermal budget

Excellent Uniformity

Less particle generated

Diverse Process Applications

Very Thin Layer Deposition

Eugene Technology 9

450mm LPCVD Introduction

Process ModulePumping cross section view Pumping cross section view

Eugene Technology 10

450mm LPCVD Introduction

Process Chamber closed Process Chamber open

Eugene Technology 11

System Overview

Category Description

Activation SourceThermal

(Resistance heating type)

Flow Dynamics Shower Head

Pressure Control Baratron Gauge & Throttle Valve

MFC Control Digital type

System Interface Device Net

In-situ Chamber Clean Remote Plasma Cleaning (NF3)

Heater

Material Ceramic AlN

Temperature Control 2 zone 2 T.C.

Lifetime Target 1 yr (TBD)

Process Chamber Max Multi 4 Chamber / Cluster tool

Sub ModuleDry Pump Each PM & 1 TM Pump

Scrubber Burn type

450mm LPCVD Introduction

Eugene Technology 12

450mm LPCVD Introduction

Process

Precursor Source (doping) Gas

300mm StatusSiH4 Si2H6 NH3 N2O

PH30.1%N2

B2H60.1% H2

SiliconNitride

● ● Field Proven & Mass Product

● ● Under develop for Low

Temperature (~550 ℃)

SiliconOxide

● ● Field Proven & Mass Product

● ● Under Develop for Low Temperature (~550 ℃)

UndopedSilicon

● Field Proven & Mass Product

● Field Proven & Mass Product

n-type Silicon

● ● Field Proven & Mass Product

● ● Field Proven & Mass Product

p-type Silicon

● ● Field Proven(p-type doping at 500 ℃)

● ●Field Proven(p-type doping at 500 ℃)

Various Process Applications & Solutions

Eugene Technology 13

450mm LPCVD Preparedness / Overall Schedule

Month

Manufacturing

April

Kickoff & Pre-Design

NovOctSepAugJulyJuneMayCategory

Design

Site Preparation

S2/S8

Source

Inspection

Shipping to

Dock

Tool Installation/

Qualification

Kickoff & Pre-design

Design Review

Approval for technical Issues

Shipping Tool Dock

Tool

Installation Qual for SL1Qual for SL2 &

Tool Released

Eugene Technology 14

DRAM 2010 2011 2012 2013 2014

Design 8F2 Conv 6F2 BG 6F2 BG 4F2 Pillar 4F2 Pillar

LPCVD

POLY, SiN, SiO2

Plasma

SystemPlasma Nitridation, Plasma Oxidation, Plasma Doping

Cyclic CVD

SiO2, SiN, POLY

450mm Conversion Roadmap & Eugene Tech’s Status

Design ProductionProcess & System

Evaluation

Design Production

Process &

System

Evaluation

Design Production

Process &

System

Evaluation

2nd Half of 2010: 1st draft design, Specification review, & Terms & Conditions Discussion.

1st Half of 2011: Terms & Conditions agreed and Contract completed.

Manufacturing begins including system integration with other modules & components.

Continuous discussion with SEMATECH/ISMI

2nd Half of 2011: 1st 450mm LPCVD system Fab in at CNSE, Albany, New York

2012 & beyond: Successful process development with SEMATECH/ISMI.

450mm LPCVD Oxide, Plasma Nitridation & Oxidation, and Cyclic CVD will be available.

And, Eugene Tech would like to offer all available process solutions to SEMATECH/ISMI

for further collaboration together.

Eugene Technology 1515

Goals: Successful Demonstration on Mature Pre-Production Tool

Processes: Robust Diffusion process with good uniformity and film quality

Productivity: Meet current 300mm’s performance by 2013

SEMATECH/ISMI

Eugene Tech IDMs

Achieving successful outcome through Strong Collaboration between three parties;

SEMATECH/ISMIC, IDMs, and Eugene Technology

Eugene Technology 16

Thank you!

Q & A