Contents1. Time Table · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 12. Location · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 43. Special Invited Talk · · · · · · · · · · · · · · · · · · · · · · · · · · · 54. Invited Talk · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 55. Panel Session · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 56. Poster Session · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 57. Authors Corner · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 58. Evening Session · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 69. Exhibition and Commercial Session · · · · · · · · · · · · · · 610.Luncheon Seminar · · · · · · · · · · · · · · · · · · · · · · · · · · · 611.Official Languages · · · · · · · · · · · · · · · · · · · · · · · · · · · 612.Registration Fee · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 713.Symposium Registration · · · · · · · · · · · · · · · · · · · · · · · 714.Cancellation Policy · · · · · · · · · · · · · · · · · · · · · · · · · · · 715.Accommodation Information · · · · · · · · · · · · · · · · · · · 816.Latest Information · · · · · · · · · · · · · · · · · · · · · · · · · · · · 817.Steering & Program Committee · · · · · · · · · · · · · · · · · 818.Secretariat · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 819.Technical Program · · · · · · · · · · · · · · · · · · · · · · · · · · · 9

Wednesday, Nov. 11, a.m. · · · · · · · · · · · · · · · · · · · · · · · · · 9Wednesday, Nov. 11, p.m. · · · · · · · · · · · · · · · · · · · · · · · · · 10Thursday, Nov. 12, a.m. · · · · · · · · · · · · · · · · · · · · · · · · · · 12Thursday, Nov. 12, p.m. · · · · · · · · · · · · · · · · · · · · · · · · · · 14Friday, Nov. 13, a.m. · · · · · · · · · · · · · · · · · · · · · · · · · · · · 18Friday, Nov. 13, p.m. · · · · · · · · · · · · · · · · · · · · · · · · · · · · 19

20.Author Index · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 2121.Exhibition · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 2222.List of Associate Members · · · · · · · · · · · · · · · · · · · · · 24

1 Time Table

– 1 –

1

– 2 – – 3 –

2 LocationAll Sessions:

Life Hall, the 5th floor, Senri Life Science Center1-4-2, Shin-Senri-Higashi-Machi, ToyonakaOsaka, 560-0082 JAPANPhone: +81-6-6873-2010, FAX: +81-6-6873-2011

Exhibition:Senri Room, the 6th floor, Senri Life Science Center

Evening Session:Crystal Hall, Senri Hankyu Hotel2-1-D-1, Shin-Senri-Higashi-Machi, ToyonakaOsaka, 560-0082, JAPANPhone: +81-6-6872-2211, Fax: +81-6-6832-2161

– 4 –

2

3 Special Invited TalkA special invited talk “True nanoscale resolution of IC

debug & diagnosis — challenge to signal sensitivity anddevice preparation” will be given by Prof. Dr. C. Boit(Technische Universitt Berlin) on Thursday, 12 November17:20～18:20.

4 Invited TalkThe following invited talks will be given.

Wednesday, 11 November：Prof. Norio NAKATSUJI“Large-scale cell production by using pluripotent stemcells (ES/iPS cells): Quality control of cell culture systemand cell products”(Professor Emeritus, Kyoto University, Institute for IntegratedCell-Material Sciences and Institute for Frontier MedicalSciences, Vice President, NPO Kyoto SMI, Director, ChiefAdviser, Kyoto Stem Cell Innovation, Inc., and Stem Cell &Device Laboratory, Inc.).

Thursday, 12 November：Prof. Kyuuichiro SANO“Innovation for future data-driven society based on CPS(cyber physical system) (Tentative)”(Director, Information Economy Division, Commerce andInformation Policy Bureau, Ministry or Economy, Trade andIndustry).

Friday, 13 November：Prof. Eizo NAKAMURA“Establishment of Comprehensive Analytical System forTerrestrial and Extraterrestrial Materials (CASTEM) andits applications”(Institute for Study of the Earth’s Interior Okayama University atMisasa).

5 Panel SessionA panel session discussing on “Dopant Visualization” will

be held on Friday, 13 November 16:05–17:35.

6 Poster SessionA poster session will be held on 12 Nov. 15:10–16:10 in

Senri-room (6F). Short (1min) oral presentation of the postersession papers will be given on the same day 11:59–12:13 inthe conference hall (Life-hall, 5F).

7 Authors CornerAuthors corner, a place for audience to meet with and

discuss with authors, will be given just after the sessions(except for special and commercial sessions).

– 5 –

8 Evening SessionEvening session of NANOTS is a special session for

discussing on research trend around the world and the futureperspective. The session will be held on the Thursday nightwith a buffet-style dinner in the Senri Hankyu hotel. CourseA registration fee includes one ticket to the evening sessionof NANOTS.

9 Exhibition and Commercial Ses-sion

The Symposium will feature the latest in service providers,equipment manufacturers and suppliers. A large exhibitfloor will give the opportunity to key-vendors to representthe core business area in these fields (second & third days).Furthermore, a commercial session will give the opportunityto introduce new products with short presentation (secondday).

10 Luncheon SeminarLuncheon seminars will be given by Hitachi High-

Technologies Corporation and Hamamatsu Photonics K.K.in lunch break time on Nov. 11 and 12, respectively. A mealis provided in these seminars. You must pre-register to attendthese seminars. In some cases, your registration may not beaccepted because of a business policy of the sponsors.

Hitachi High-Technologies Luncheon Seminar: Wednes-day, 11 Nov.Hamamatsu Photonics Luncheon Seminar: Thursday12 Nov.Theme: Recent topics on Hamamatsu PhotonicsAbstract: Technology development by Hamamatsu photon-

ics in the past year and failure analysis case studieswill be introduced.

11 Official LanguagesThe official languages of the symposium are Japanese and

English. Papers included in the proceeding will be written inJapanese or English. Papers in Japanese will have an abstractwritten in English. We will have no interpreter.

– 6 –

12 Registration Fee

Please pay the fee by either of the following methods.Wire Transfer: Please send Japanese YEN (JPY) to the

following account by wire transfer not later than 31October 2015:Bank Name: Resona Bank, Ltd.SWIFT (BIC) Code: DIWAJPJTBranch Name: Senri-Kita BranchBranch Code: 222Address: 4-2-D2-201, Furuedai, Suita, Osaka, 565-

0874, JapanPhone: +81-6-6872-0651Account Number: 6843152Account Name: The Institute of NANO Testing

Nakamae KojiNote: All bank charges JPY 5,000 (= the sending

bank charge + the receiving bank charge) mustbe paid by the participant.

Cash: Please pay at the registration desk during thesymposium dates. Only Japanese YEN (JPY) isacceptable.

Credit card: Please contact to the symposium secretariat,if you want to pay the registration fee by credit card(PayPal).

13 Symposium RegistrationWe strongly encourage you to register on line by using

our website: http://www-NANOTS.ist.osaka-u.ac.jp/ by 30October 2015.

14 Cancellation PolicyCancellations must be submitted in writing. Cancellations

received by November 6, 17:00 (in Japan Standard Time)are entitled to a refund minus an administrative fee (all bankcharges plus a 10 % processing fee). No refunds will be givento registrants who cancel after November 6, 2015 or who failto attend the event.

– 7 –

3

15 Accommodation InformationThere is Senri Hankyu Hotel around the symposium site.

The hotel is located close to the symposium site and theEvening Session will be held in the hotel. You can go tothe symposium site from the hotel by 5 minutes walk. If youwant to stay at Senri Hankyu Hotel, please visit the hotel’sweb site and book a room. Please keep in mind that thereservation will be closed in the case all available rooms arebooked.

http://www.senri-htl.co.jp/

16 Latest InformationYou can find latest information on all aspects of NANOTS

at http://www-NANOTS.ist.osaka-u.ac.jp/ .

17 Steering & Program CommitteeChairman:

Koji NAKAMAE (Osaka University)Member:

Yasunori GOTO (Toyota Motor Corp.)Yasuhisa HIGUCHI (Hitachi Power Semiconductor

Device, Ltd.)Toru KOYAMA (Renesas Semiconductor Man-

ufacturing Co., Ltd.)Yoji MASHIKO (Oita University)Motosuke MIYOSHI (University of Tokyo)Kiyoshi NIKAWA (Kanazawa Institute of Tech-

nology)Kenji NORIMATSU (Toshiba Corp.)Yoichi OSE (Hitachi High-Technologies

Corp.)Mitsuo SUGA (JEOL, Ltd.)Hirotoshi TERADA (Hamamatsu Photonics)Yuichiro YAMAZAKI (NGR Inc.)Ichiro YOSHII (DCG Systems G.K.)

18 SecretariatKatsuyoshi MIURA and Yoshihiro MIDOHSecretariat of the Institute of NANO TestingNakamae Lab., Dept. Information Systems Engineering,Grad. Sch. Information Science and TechnologyOsaka University2-1, Yamada-Oka, Suita, Osaka, 565-0871 JAPANPhone/Fax: +81-6-6879-7813 / +81-6-6879-7812E-mail: NANOTS@ist.osaka-u.ac.jpWeb: http://www-NANOTS.ist.osaka-u.ac.jp/

– 8 –

19 Technical Program

Wednesday, Nov. 11, a.m.. . . . . . . . . . . . . 9:15～9:20 Opening Session . . . . . . . . . . . . .

Process Evaluation Techiques & Metrologyand Inspection I a.m., Wed 11

Chairman Motosuke Miyoshi

(1)9:20

Approaches to the metrology challenges forDSA holeM. Asano, K. Matsuki, T. Ojima, H. Yonemitsu,A. Kawanishi, and M. Sato / Lithography ProcessTechnology Dept., Center for Semiconductor Research &Development, Toshiba

(2)9:45

Patterned mask inspection technology withprojection electron microscope technique for 11nm half-pitch generation EUV masksS. Iida, R. Hirano, T. Amano, and H. Watanabe /Advanced mask Research Dept., EUVL InfrastructureDevelopment Center, Inc.(EIDEC)

(3)10:10

Assess a possibility of high sensitive EBinspection for bottom defects in HAR devices.Y. Iida(a, A. Hamaguchi(b, and C. Ida(b / a)AnalysisInspection and Metrology Engineering Dept.,Semiconductor & Strage Company, Toshiba Corp.,b)Manufacturing Engineering Dept. II, Semiconductor &Strage Company, Toshiba Corp.

. . . . . . . . . . 10:35～10:55 Authors corner & break . . . . . . . . . .

Process Evaluation Techiques & Metrologyand Inspection II a.m., Wed 11

Chairman Yuichiro Yamazaki

(4)10:55

Study of energy discrimination effect ofsecondary electrons by SEM image predictionmethod.T. Yokosuka(a, C. Lee(a, M. Hasegawa(a,K. Kurosawa(b, and H. Kazumi(b / a)Research &Development Group, Center for Technology Innovation -Controls, Hitachi, Ltd., b)Process Control SystemsResearch and Development Dept., HitachiHigh-Technologies Corp.

– 9 –

(5)11:20

Monitoring CD-SEM performance using imagequality analysisS. Babin(a, P. Yushmanov(a, I. Gudich(a, and J. Huang(b

/ a)aBeam Technologies, Inc., b)SCH Electronics

(6)11:45

Cross-sectional profile analysis of resist L/Sand hole patternY. Ito, A. Higuchi, and K. Omote / X-ray research Lab.,Rigaku Corp.

. . . . . . . . . . . . . 12:10～12:30 Authors Corner . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . 12:30～13:50 Break . . . . . . . . . . . . . . . . .

(Hitachi High-Technologies Luncheon Seminar*pre-registration required)

Wednesday, Nov. 11, p.m.

Invited Talk p.m., Wed 11

Chairman Koji Nakamae

(I1)13:50

Large-scale cell production by using pluripotentstem cells (ES/iPS cells): Quality control of cellculture system and cell productsN. Nakatsuji / Professor Emeritus, Kyoto Univ., Institutefor Integrated Cell-Material Sciences and Institute forFrontier Medical Sciences, Vice President, NPO KyotoSMI, Director, Chief Adviser, Kyoto Stem CellInnovation, Inc., and Stem Cell & Device Laboratory, Inc.

. . . 14:50～15:10 Break & discuss with invited speaker . . .

Power Device Analysis I p.m., Wed 11

Chairman Yasunori Goto

(7)15:10

Direct imaging of local electromagnetic fieldinside materials using DPC STEMN. Shibata / School of Engineering, Univ. Tokyo

(8)15:35

Inspection of defects in 4H-SiC wafer byscanning electron microscopyT. Isshiki / Electrical Engineering and Electronics, KyotoInstitute of Technology

– 10 –

4

(9)16:00

Comprehensive 2D-carrier profiling oflow-doping region by high-sensitivity scanningspreading resistance microscopy (SSRM) forpower devicesL. Zhang(a, M. Koike(a, M. Ono(a, S. Itai(a,K. Matsuzawa(a, S. Ono(b, W. Hatano(b,M. Yamaguchi(b, Y. Hayase(b, and K. Hara(b /a)Advanced LSI Technology Lab., R&D Center, Toshiba,b)S&S Company, Toshiba

. . . . . . . . . . . . . . . . . 16:25～16:45 Break . . . . . . . . . . . . . . . . .

Power Device Analysis II p.m., Wed 11

Chairman Yasuhisa Higuchi

(10)16:45

Analysis of GS voltage dependence of carrierdistribution in cross-sectioned SiC-DMOSFETusing supre-higher-order scanning nonlineardielectric microscopyN. Chinone and Y. Cho / Research Institute of ElectricalCommunication, Tohoku Univ.

(11)17:10

A study on method for determination ofpn-junction in SiC power transistor usingsuper-higher-order scanning nonlineardielectric microscopyN. Chinone(a, Y. Goto(b, and Y. Cho(a / a)ResearchInstitute of Electrical Communication, Tohoku Univ.,b)Power Electronics Development Div., TOYOTA MotorCorp.

(12)17:35

Measurement of two dimensional electron gasand polarization in AlGaN/GaN heterostructureusing scanning nonlinear dielectric microscopyK. Hirose(a, Y. Goto(b, N. Chinone(a, and Y. Cho(a /a)Research Institute of Electrical Communication, TohokuUniv., b)Power Electronics Development Div., ToyotaMotor Corp.

. . . . . . . . . . . . . 18:00～18:20 Authors Corner . . . . . . . . . . . . .

– 11 –

Thursday, Nov. 12, a.m.

Electron Optics & Applications a.m., Thu 12

Chairman Mitsuo Suga

(13)9:00

Development of electron optical device forcorrection of spherical aberration inhigh-resolution scanning / transmissionelectron microscopesT. Kawasaki(a, T. Ishida(b, Y. Takai(c, Y. Ogawa(c,M. Tomita(d, T. Matsutani(e, T. Kodama(c, andT. Ikuta(f / a)Nanostructures Research Lab., Japan FineCeramics Center (JFCC), b)Institute of Materials andSystems for Sustainability, Nagoya Univ., c)Grad. Sch.Science and Technology, Meijo Univerisyt, d)VacuumDevice Ltd., e)Faculty of Science and Engineering, KinkiUniv., f)Faculty of Engineering, OsakaElectro-Communication Univ.

(14)9:25

Study on state analysis of Ti using DualEELSN. Nakanishi(a, T. Kawai(b, and T. Ito(a / a)AnalysisInspection and Metrology Engineering Dept., Toshiba,b)Advanced LSI Technology Lab., Toshiba

(15)9:50

Quantitative measurement of buried interfaceroughness by electron tomography and thefuture prospectsM. Hayashida(a, S. Ogawa(b, and M. Malac(a /a)National Institute for Nanotechnology,b)Nanoelectronics Research Institute, National Institute ofAdvanced Industrial Science and Technology, c)Dept.Physics, Univ. Alberta

. . . . . . . . . . . . . . . . . 10:15～10:35 Break . . . . . . . . . . . . . . . . .

Commercial Session a.m., Thu 12Chairman Yoichi Ose

(C1)10:35

High resolution X-ray CT system FF20 CTintroduction of scan exampleN. Seimiya(a and R. Sommar(b / a)Sales, YXLONInternational K. K., b)FEINFOCUS Product Line,YXLON International GmbH

(C2)10:41

Combination of ELITE analysis and nanofocusx-rays CT systemT. Ueno(a and N. Nanbu(b / a)SYSTEMS SALES &MARKETING Div., SALES Dept. 2, MARUBUN Corp.,b)DEVICE SALES & MARKETING Div. 3, SALESDept. 2, MARUBUN Corp.

– 12 –

(C3)10:47

Introduction of new plastic package IC opener“PS105”S. Suzuki / Sales, Nippon Scientific Co., Ltd.

(C4)10:53

Introduction of low frequency lock-in OBIRCHanalysis as a solution for the low resistanceshort failure analysis.T. Kume, K. Suzuki, and S. Suzuki / System Div.,Business Promotion, Hamamatsu Photonics K. K.

(C5)10:59

Introduction of image navigation systemK. Konishi / Product planning and development Gr,Astron. Inc.

(C6)11:05

Latest version of LAVIS-plusM. Nikaido, Y. Sawamura, and K. Hirai / EDA ProductDiv., TOOL Corp.

(C7)11:11

DdProber : Self-sensing AFM nanoproberR. Shioda(a, Y. Amano(a, K. Ikezawa(a, Y. Nakamura(b,and T. Kasahara(b / a)Wafer Integration Inc., b)Yokowoco Ltd.

(C8)11:17

Small-sized precision polishing systemintroduction of bni20 seriesM. Nomura, H. Yoshida, and T. Takasaki /Nanotechnology Solution Div. Precision InstrumentGroup, BN TECHNOLOGY Corp.

(C9)11:23

Introduction to the auto micro-sampling systemS. Tomimatsu, M. Sato, T. Asahata, and T. Fujii / BeamTechnology Engineering Dept., Hitachi High-TechScience Corp.

(C10)11:29

An introduction of scanning microwaveimpedance microscopy (sMIM)Y. Deguchi / Asylum Research Div., Oxford InstrumentsKK

(C11)11:35

An introduction of real-time 3D analyticalFIB-SEM「NX9000」X. Man, Y. Yamamoto, A. Uemoto, K. Nakazawa,H. Suzuki, T. Asahata, and T. Fujii / Beam TechnologyEngineering Dept., Hitachi High-Tech Science Corp.

(C12)11:41

New high-light technology of automaticmulti-region observation and elementalanalysis system by TEMN. Endo(a, Y. Shimoda(b, S. Kawai(a, I. Oonishi(a,K. Nakano(b, and H. Furukawa(b / a)EM Business Unit,JEOL Ltd., b)System In Frontier Inc.

(C13)11:47

Introduction of the new products “GeminiSEMseries” which combine low-kV, low-vacuum andhigh resolution.T. Aiso / Analytical Systems Dept., Toyo Corp.

– 13 –

5

(C14)11:53

Chip-level analysis using a cross-sectionalSEM and an optical microscopeK. Nakano(a, J. Nakakobaru(a, K. Takahashi(b, andT. Kuba(b / a)System in Frontier Inc., b)JEOL Ltd.

(C15) (Canceled)Introduction of the kokubunji-labM. Kato / TechanaLye Co., Ltd.

Poster Short Presentation a.m., Thu 12

. . . . . . . . 11:59～12:13 Poster Short Presentation . . . . . . . .

. . . . . . . . . . . . . . 12:13～12:30 Group Photo . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . 12:30～13:50 Break . . . . . . . . . . . . . . . . .

(Hamamatsu Photonics Luncheon Seminar, “Recent topicson Hamamatsu Photonics,” *pre-registration required)

Thursday, Nov. 12, p.m.

Invited Talk p.m., Thu 12

Chairman Koji Nakamae

(I2)13:50

Innovation for future data-driven society(tentative)K. Sano / Director, Information Economy Div.,Commerce and Information Policy Bureau, Ministry ofEconomy, Trade and Industry

. . . 14:50～15:10 Break & discuss with invited speaker . . .

Poster Session p.m., Thu 12

Chairman Kenji Norimatsu

. . . . . . . . . . . 15:10～16:10 in Senri-Room (6F) . . . . . . . . . . .

(16) A learning based super-resolution for a singleSEM image using continuous wavelet transformand markov random fieldN. Okamoto, Y. Midoh, and K. Nakamae / Grad. Sch.Information Science and Technology, Osaka Univ.

(17) Technology trend for plastic package IC openerS. Suzuki / Sales, Nippon Scientific Co., Ltd.

– 14 –

(18) DPA (destructive physical analysis) techniquefor SiC deviceA. Hasegawa(a, H. Kubota(a, N. Nakamura(a,H. Tateyama(a, N. Otani(a, and T. Maezumi(b /a)Reliability Analysis Div., Oki Engineering Co., Ltd.,b)Electronic Devices Evaluation Div., Oki EngineeringCo., Ltd.

(19) Localization technique of short location in MIMcapacitorK. Oota(a, M. Kurihara(b, T. Hashimoto(c,K. Norimatsu(c, H. Shiigi(c, and K. Hara(c / a)LSISolutions Div., Toshiba Information Systems Corp.,b)Toshiba Micro Electronics Corp., c)ToshibaSemiconductor & Storage Products Company

(20) (Canceled)Investigation on the power device analysis using a chargedparticle beam probingK. Dai(a, M. Jinghong(a, K. Suzuki(a, Y. Soida(a, S. Murakami(a,K. Norimatsu(b, and M. Yoji(a / a)Grad. Sch. Engineering, Oita Univ.,b)Semiconductor & Storage Products Company, Toshiba Corp.

(21) Measurement of cross section of p-i-n junctionin amorphous silicon solar cell usingsuper-higher-order scanning nonlineardielectric microscopyK. Hirose, N. Chinone, and Y. Cho / Research Instituteof Electrical Communication, Tohoku Univ.

(22) Visualization of current densities in field effecttransistor devices using a tunnelmagnetoresistive sensorK. Suzuki(a, M. Tsutsumi(a, and Y. Terui(b /a)Semiconductor Evaluation Lab., Evaluation andAnalysis Technology Center, Toshiba Nanoanalysis Corp.,b)Semiconductor Memory Evaluation and Analysis Lab.,Evaluation and Analysis Technology Center, ToshibaNanoanalysis Corp.

(23) Three-dimensional reconstruction from a TEMtilt-series movie using support vectorregressionY. Midoh(a, Y. Mitsuya(a, R. Nishi(b, andK. Nakamae(a / a)Grad. Sch. Information Science andTechnology, Osaka Univ., b)Research Center forUltra-High Voltage Electron Microscopy, Osaka Univ.

(24) Study of multi-class image segmentation fromthree-dimensional electron microscopebiological cell imagesH. Tsutsumi, Y. Midoh, and K. Nakamae / Grad. Sch.Information Science and Technology, Osaka Univ.

– 15 –

(25) A quantum watermarking scheme using simpleand small-scale quantum circuitsS. Miyake and K. Nakamae / Grad. Sch. InformationScience and Technology, Osaka Univ.

(26) Effective detection rate based on net lengthdistribution for MCUK. Shiozawa(a and H. Ito(b / a)Technology Div.,Analysis & Evaluation Technology Dept., RenesasSemiconductor Manufacturing Co., Ltd., b)1st SolutionBusiness Unit, Core Technology Business Div., RenesasElectronics Co., Ltd.

(27) Application of ultimate-BOST method for failuredetection system using expected valuegeneration from hardware unitsK. Shiozawa(a, M. Kimura(b, K. Fukushima(c,K. Saito(d, and Y. Otani(d / a)Technology Div., Analysis& Evaluation Technology Dept., Renesas SemiconductorManyufacturing Co., Ltd., b)Quality Assurance Div., 1stMCU Quality Assurance Dept., Renesas Electronics Co.,Ltd., c)Business Planning Div., Quality Control Dept.,Renesas Design Co., Ltd., d)Third Development Div.,Syswave Corp.

(28) A 3D NoC routing algorithm supressing NBTIdegradationK. Miura, T. Tanaka, Y. Suzuki, and K. Nakamae /Grad. Sch. Information Science and Technology,例:Osaka Univ.

(29) Attack resistant design of scan-based AESencription circuit against attacks using aphysical analysis toolK. Miura, T. Obayashi, and K. Nakamae / Grad. Sch.Information Science and Technology, Osaka Univ.

(30) The study on current path formation usingcharged particle beamsJ. Ma, S. Tomonaga, M. Utsumi, K. Suzuki, D. Kitano,and Y. Mashiko / Grad. Sch. Engineering, Oita Univ.

(31) A study of MOSFET control with FIB in EBACanalysisK. Suzuki(a, M. Hanada(a, J. Ma(a, D. Kitano(a,K. Norimatsu(b, and Y. Mashiko(a / a)Grad. Sch.Engineering, Oita Univ., b)Semiconductor & StorageProducts Company, Toshiba Corp.

(32) Characterization of molecularly homogeneousinorganic transparent protective coatingprepared by sol-gel processH.S. Chen / National Tsing Hua Univ.

– 16 –

6

Fault Localization I p.m., Thu 12

Chairman Ichiro Yoshii

(33)16:10

Frequency domain failure analysis for randomlogic circuit using a short cycle test patternJ. Nonaka(a, K. Shigeta(a, N. Matsui(b, A. Uchikado(b,and S. Wada(b / a)Technology Div., Analysis andEvaluation Technology Dept., Renesas SemiconductorManufacturing, b)Evaluation Analysis Div., RenesasEngineering Services

(34)16:35

Development of layout-based test coverageverification “physical test coverage”Y. Nagamura(a, T. Koyama(a, J. Matsushima(b,K. Tomonaga(b, Y. Hoshi(c, S. Nomura(c, K. Iwasaki(d,and M. Arai(e / a)Analysis & Evaluation TechnologyDept., Renesas Semiconductor Manufacturing Co., Ltd.,b)Design Integration Dept., Renesas System Design Co.,Ltd., c)Evaluation Analysis Dept., Renesas EngineeringServices Co., Ltd., d)Libray and Academic InformationCenter, Tokyo Metropolitan Univ., e)College of InductrialTechnology, Nihon Univ.

. . . . . . . . . . . . . 17:00～17:20 Authors Corner . . . . . . . . . . . . .

Special Invited Talk p.m., Thu 12

Chairman Hirotoshi Terada

(S1)17:20

True nanoscale resolution of IC debug &diagnosis - challenge to signal sensitivity anddevice preparationC. Boit(a, H. Lohrke(a, P. Scholz(a, A. Beyreuther(a,U. Kerst(a, and Y. Iwaki(b / a)Technische UniversittBerlin, Germany, b)Hamamatsu Photonics GmbH,Germany

. . . . . . . . . . . . . . . . . 18:20～18:50 Break . . . . . . . . . . . . . . . . .

Evening Session p.m., Thu 12

18:50

–

20:50

Location:Senri Hankyu Hotel

– 17 –

Friday, Nov. 13, a.m.

Fault Localization II a.m., Fri 13Chairman Toru Koyama

(35)9:00

Localization of inner-layer short failure ofprinted wiring board using lock-in thermographyand its root cause analysisH. Tsuchiya(a, Y. Ikemoto(b, K. Takamori(c,K. Yamamoto(c, I. Yoshii(d, A. Bando(e, and Y. Ihara(f

/ a)Quality Assurance Dept. 1, Anden Co., Ltd.,b)Reliability Test Center, Qualtec Co., Ltd., c)ReliabilityAnalysis Div., Oki Engineering Co., Ltd., d)DCGSystems G. K., e)Scientific & Semiconductor InstrumentsR&D Dept., HORIBA Ltd., f)Kusumoto Chemicals Ltd.ETAC Division

(36)9:25

Application to a semiconductor device of highprecision temperature measurement techniqueT. Matsumoto, A. Otaka, and T. Nakamura / Dept. 18Systems Div., Hamamatsu Photonics K. K.

(37)9:50

Detailed thermal analysis of semiconductordevices with optical probed thermo-reflectanceimage mapping (OPTIM)K. Endo(a, N. Kenji(a, S. Takashi(a, T. Nakamura(b,T. Matsumoto(b, K. Koshikawa(b, and K. Nakamae(c /a)Semiconductor & Storage Products Company, Toshiba,b)System Div., Hamamatsu Photonics, c)Grad. Sch.Information Science and Technology, Osaka Univ.

. . . . . . . . . . . . . . . . . 10:15～10:35 Break . . . . . . . . . . . . . . . . .

Fault Localization III a.m., Fri 13Chairman Yoji Mashiko

(38)10:35

Extended sensitivity NIR camera for photonemission microscopy of ICsA.B. Shehata(a, F. Stellari(a, A. Weger(a, P. Song(a,I. Yoshii(b, H. Deslandes(b, T. Lundquist(b, andE. Ramsay(b / a)T. J. Watson Research Center, IBM,b)DCG Systems

(39)11:00

Magnetic current imaging and photon emissionfor die level electrical fault isolationJ. Gaudestad(a, T. Dean(b, and F. Rusli(a / a)Magma,Neocera, b)MicroChip Technology

– 18 –

(40)11:25

MFI with MOFM : Magneto-optical frequencymapping for semiconductor failure analysisT. Nakamura / Dept. 18 System Div., HamamatsuPhotonics K. K.

. . . . . . . . . . . . . 11:50～12:10 Authors Corner . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . 12:10～13:10 Break . . . . . . . . . . . . . . . . .

Friday, Nov. 13, p.m.

Invited Talk p.m., Fri 13

Chairman Koji Nakamae

(I3)13:10

Establishment of comprehensive analyticalsystem for terrestrial and extraterrestrialmaterials (CASTEM) and its applicationsE. Nakamura / Okayama University at Misasa, Institutefor Study of the Earth’s Interior

. . . 14:10～14:30 Break & discuss with invited speaker . . .

Physical Analysis p.m., Fri 13

Chairman Hirotoshi Terada

(41)14:30

Quantitative analysis of hydrogen inSiO2/SiN/SiO2 stacks using 3D atom probeY. Kunimune(a, Y. Shimada(a, M. Inoue(b, B. Hang(c,T. Yuan(c, Y. Shimizu(c, K. Inoue(c, F. Yano(d,Y. Nagai(c, T. Katayama(a, and T. Ide(a / a)Analysis &Evaluation Technology Dept., Renesas SemiconductorManufacturing Co., Ltd., b)Process Technology Dept.,Renesas Electronics Corp., c)Institute for MaterialsResearch, Tohoku Univ., d)Grad. Sch. Science andTechnology, Tokyo Institute of Technology

(42)14:55

Extending electrical scanning probe microscopymeasurements of semiconductor devices usingmicrowave impedance microscopyO. Amster(a, B. Drevniok(b, Y. Yang(a,S.J. Dixon-Warren(b, and S. Friedman(a / a)Corporation,PrimeNano Inc., b)Corporation, Chipworks

(43)15:20

Sample preparation technique forsemiconductor dopant profile imaging by SEMS. Takeuchi, T. Sunaoshi, H. Ito, M. Sasajima, andA. Kamino / Hitachi High-Technologies Corp.

. . . . . . . . . . . . . . . . . 15:45～16:05 Break . . . . . . . . . . . . . . . . .

– 19 –

7

Panel Session p.m., Fri 13

16:05

–

17:35

Theme: Dopant Visualization

Moderator: Kiyoshi Nikawa / Kanazawa Inst. Tech.

Panelist:Kyoichiro Asayama / JEOLYasuo Shimizu / Tohoku Univ.Yasuo Cho / Tohoku Univ.Li Zhang / ToshibaTakaya Fujita / Nissan Arc

(P1) Dopant visualization - introduction to paneldiscussion -K. Nikawa / Grad. Sch. Engineering, Kanazawa Instituteof Technology

(P2) Detection of dopant in the semiconductordevices by using electron microscopeK. Asayama(a and K. Asayama(b / a)EM business unit,JEOL Ltd., b)Research Center For Ultra-High VoltageElectron Microscopy, Osaka Univ.

(P3) Three-dimensional atom probe for dopantdistribution analysis in semiconductor devicesY. Shimizu / Institute for Materials Research, TohokuUniv.

(P4) Scanning nonlinear dielectric micorscopyY. Cho / Research Institute of Electrical Communication,Tohoku Univ.

(P5) 1nm高分解能走査型拡がり抵抗顕微鏡 (SSRM)を用いた siデバイスにおける 2次元キャリア分布計測L. Zhang / Advanced LSI Technology Lab., CorporateR&D Center, Toshiba Corp.

(P6) Measurement uncertainty and quantification formeasuring carrier concentration insemiconductor devices by using scanningcapacitance microscopyT. Fujita / Power Electronics Analysis Lab., NISSANARC, Ltd.

– 20 –

20 Author Index• Simple numbers and numbers preceded by ‘C’ show presentation numbers in the

technical and the commercial sessions, respectively.

A–DAiso, T. . . . . . . . . C13Amano, T. . . . . . . . . 2Amano, Y.. . . . . . .C7Amster, O. . . . . . . . 42Arai, M. . . . . . . . . . 34Asahata, T. . C9, C11Asano, M. . . . . . . . . 1Asayama, K. . P2, P2Babin, S. . . . . . . . . . 5Bando, A. . . . . . . . 35Beyreuther, A. . . . S1Boit, C. . . . . . . . . . S1Chen, H.S. . . . . . . . 32Chinone, N. . . 10, 11,12, 21Cho, Y. . . 10, 11, 12,21, P4Dean, T. . . . . . . . . . 39Deguchi, Y. . . . . C10Deslandes, H. . . . . 38Dixon-Warren, S.J.42Drevniok, B. . . . . . 42

E–GEndo, K. . . . . . . . . 37Endo, N. . . . . . . . C12Friedman, S. . . . . . 42Fujii, T. . . . . C9, C11Fujita, T. . . . . . . . . P6Fukushima, K. . . . 27Furukawa, H. . . . C12Gaudestad, J. . . . . 39Goto, Y. . . . . . . 11, 12Gudich, I. . . . . . . . . . 5

H–IHamaguchi, A. . . . . 3Hanada, M. . . . . . . 31Hang, B. . . . . . . . . 41Hara, K. . . . . . . . 9, 19Hasegawa, A. . . . . 18Hasegawa, M. . . . . . 4Hashimoto, T. . . . . 19Hatano, W. . . . . . . . .9Hayase, Y. . . . . . . . . 9Hayashida, M. . . . 15Higuchi, A. . . . . . . . 6Hirai, K. . . . . . . . . C6Hirano, R. . . . . . . . . 2Hirose, K. . . . . 12, 21Hoshi, Y. . . . . . . . . 34Huang, J. . . . . . . . . . 5Ida, C. . . . . . . . . . . . . 3

Ide, T. . . . . . . . . . . . 41Ihara, Y. . . . . . . . . . 35Iida, S. . . . . . . . . . . . 2Iida, Y. . . . . . . . . . . . 3Ikemoto, Y. . . . . . . 35Ikezawa, K. . . . . . C7Ikuta, T. . . . . . . . . . 13Inoue, K. . . . . . . . . 41Inoue, M. . . . . . . . . 41Ishida, T. . . . . . . . . 13Isshiki, T. . . . . . . . . . 8Itai, S. . . . . . . . . . . . . 9Ito, H. . . . . . . . 26, 43Ito, T. . . . . . . . . . . . 14Ito, Y. . . . . . . . . . . . . 6Iwaki, Y. . . . . . . . . S1Iwasaki, K. . . . . . . 34

J–KKamino, A. . . . . . . 43Kasahara, T. . . . . . C7Katayama, T. . . . . 41Kawai, S. . . . . . . C12Kawai, T. . . . . . . . . 14Kawanishi, A. . . . . . 1Kawasaki, T. . . . . . 13Kazumi, H. . . . . . . . 4Kenji, N. . . . . . . . . 37Kerst, U. . . . . . . . . S1Kimura, M. . . . . . . 27Kitano, D. . . . . 30, 31Kodama, T. . . . . . . 13Koike, M. . . . . . . . . . 9Konishi, K. . . . . . . C5Koshikawa, K. . . . 37Koyama, T. . . . . . . 34Kuba, T. . . . . . . . C14Kubota, H. . . . . . . . 18Kume, T. . . . . . . . . C4Kunimune, Y. . . . . 41Kurihara, M. . . . . . 19Kurosawa, K. . . . . . 4

L–MLee, C. . . . . . . . . . . . 4Lohrke, H. . . . . . . .S1Lundquist, T. . . . . 38Ma, J. . . . . . . . . 30, 31Maezumi, T. . . . . . 18Malac, M. . . . . . . . 15Man, X. . . . . . . . .C11Mashiko, Y. . . 30, 31Matsui, N. . . . . . . . 33Matsuki, K. . . . . . . . 1Matsumoto, T. 36, 37Matsushima, J. . . . 34

Matsutani, T. . . . . . 13Matsuzawa, K. . . . . 9Midoh, Y. . 16, 23, 24Mitsuya, Y. . . . . . . 23Miura, K. . . . . 28, 29Miyake, S. . . . . . . . 25

N–PNagai, Y. . . . . . . . . 41Nagamura, Y. . . . . 34Nakakobaru, J. . C14Nakamae, K. . 16, 23,24, 25, 28, 29, 37Nakamura, E. . . . . I3Nakamura, N. . . . . 18Nakamura, T. 36, 37,40Nakamura, Y. . . . . C7Nakanishi, N. . . . . 14Nakano, K.C12, C14Nakatsuji, N. . . . . . I1Nakazawa, K. . . C11Nanbu, N. . . . . . . . C2Nikaido, M. . . . . . C6Nikawa, K. . . . . . . P1Nishi, R. . . . . . . . . 23Nomura, M. . . . . . C8Nomura, S. . . . . . . 34Nonaka, J. . . . . . . . 33Norimatsu, K. 19, 31Obayashi, T. . . . . . 29Ogawa, S. . . . . . . . 15Ogawa, Y. . . . . . . . 13Ojima, T. . . . . . . . . . 1Okamoto, N. . . . . . 16Omote, K. . . . . . . . . 6Ono, M. . . . . . . . . . . 9Ono, S. . . . . . . . . . . . 9Oonishi, I. . . . . . C12Oota, K. . . . . . . . . . 19Otaka, A. . . . . . . . . 36Otani, N. . . . . . . . . 18Otani, Y. . . . . . . . . .27

Q–SRamsay, E. . . . . . . 38Rusli, F. . . . . . . . . . 39Saito, K. . . . . . . . . . 27Sano, K. . . . . . . . . . I2Sasajima, M. . . . . . 43Sato, M. . . . . . . 1, C9Sawamura, Y. . . . . C6Scholz, P. . . . . . . . .S1Seimiya, N. . . . . . C1Shehata, A.B. . . . . 38

– 21 –

Shibata, N. . . . . . . . . 7Shigeta, K. . . . . . . 33Shiigi, H. . . . . . . . . 19Shimada, Y. . . . . . . 41Shimizu, Y. . . 41, P3Shimoda, Y. . . . . C12Shioda, R. . . . . . . . C7Shiozawa, K. . 26, 27Sommar, R. . . . . . C1Song, P. . . . . . . . . . 38Stellari, F. . . . . . . . 38Sunaoshi, T. . . . . . 43Suzuki, H. . . . . . C11Suzuki, K. . . .C4, 22,30, 31Suzuki, S.C3, C4, 17Suzuki, Y. . . . . . . . 28

T–VTakahashi, K. . . .C14Takai, Y. . . . . . . . . . 13Takamori, K. . . . . . 35Takasaki, T. . . . . . C8Takashi, S. . . . . . . . 37Takeuchi, S. . . . . . 43Tanaka, T. . . . . . . . 28Tateyama, H. . . . . .18Terui, Y. . . . . . . . . . 22Tomimatsu, S. . . . C9Tomita, M.. . . . . . .13Tomonaga, K. . . . . 34Tomonaga, S. . . . . 30Tsuchiya, H. . . . . . 35Tsutsumi, H. . . . . . 24Tsutsumi, M. . . . . 22Uchikado, A. . . . . 33Uemoto, A. . . . . C11

Ueno, T. . . . . . . . . C2Utsumi, M. . . . . . . 30

W–ZWada, S. . . . . . . . . .33Watanabe, H. . . . . . .2Weger, A. . . . . . . . .38Yamaguchi, M. . . . . 9Yamamoto, K. . . . 35Yamamoto, Y. . . C11Yang, Y. . . . . . . . . . 42Yano, F. . . . . . . . . . 41Yokosuka, T. . . . . . . 4Yonemitsu, H. . . . . . 1Yoshida, H. . . . . . .C8Yoshii, I. . . . . . 35, 38Yuan, T. . . . . . . . . . 41Yushmanov, P. . . . . 5Zhang, L. . . . . . 9, P5

21 ExhibitionThursday, Nov. 12 and Friday, Nov. 13, 10:00～17:00In Senri Room, the 6th floor

(The exhibition floorplan is subject to change without notice.)

• Numbers preceded by ‘C’ after company names show presentation numbers in theCommercial Session.

1. HiSOL, inc:Package unsealing, thermal analysis, and wafer cleavage /laser cutter / wire bonding, pick-up, and assembly tool

2. Nippon Barnes Co., Ltd.:Projection-Moire Warpage and Deformationmeasurement system — TDM

3. YXLON international K.K.: C1New product. High resolution X-ray CT FF20 CT.

4. AD Science Inc.:Nano-Prober, Plasma Asher, Sputter/Carbon Coater,Cryo-SEM Preparation System

5. FEI Company Japan Ltd.:FIB, SEM and TEM Systems for Device Analysis andCircuit Edit

– 22 –

8

6. Oxford Instruments KK: C10Scanning Microwave Impedance Microscopy (sMIM),X-Max Extreme WIndowless Silicon Drift Detector forSEM

7. Hitachi High-Technologies Corporation:Electron Beam Absorbed Current (EBAC)Characterization System nanoEBAC NE4000

8. AITRANS Corporation:Kaiseki-support lab, Table-top plasma etching instrumentTP-50B

9. Nippon Scientific Co., Ltd.: C3Decapsulation system by laser, RIE, chemical

10. Hamamatau Photonics K.K.: C4Semiconductoe failure analysis systemes

11. TOKI COMMERCIAL CO., LTD:High-voltage prober

12. Renesas Engineering Services Co., Ltd:Introduction of fault location analysis

13. Astron, Inc: C5Image Navigation system AZView

14. DCG Systems G.K.:Innovative solutions to maximize the yield and efficiencyof micro-fabrication technologies

15. Oki Engineering co., Ltd.:The 35th Annual NENO Testing Symposium

16. MARUBUN Corporation: C2Combination of ELITE analysis and nanofocus x-raysCT system

17. JEOL Ltd.: C12,C14Multi-point automatic analysis using an electoronmaicroscope

18. TOOL Corporation: C6Latest version of LAVIS-plus

19. BN TECHNOLOGY CORPORATION: C8Small-sized Precision Polishing System Bni20 series

20. Toyo Corporation: C13New FE-SEM “GeminiSEM series” which combineLow-kV, Low Vacuum and High resolution

21. aBeam Technologies Japan, Inc.:Softwares for physical analysis and metorology usinge-beam technologies

22. ADVANTEST Corporation:Integrated circuit failure analysis systemTS9000-TDR/TDT

– 23 –

23. Wafer Integration Inc. and YOKOWO Co.、LTD: C7DdProber Self-sennsing AFM Nanoprober WI3000

24. SHINING TECHNOLOGY CORPORATIONLIMITED:

Dacapsolution Product

25. APOLLOWAVE Corporation:Manual Probe Station

26. Park Systems Japan Inc.:New high vacuum AFM for electrical characteristics &failure analysis, NX-Hivac

22 List of Associate Members(in alphabetic order, 1 November 2015)

• aBeam Technologies, Inc.• AD Science Co.• ADVANTEST CORPORATION• AITRANS corporation• APOLLOWAVE Corporation• Applied Materials, Inc.• ASTRON Inc.• ATE Service Corp.• BN TECHNOLOGY CORPORATION• DCG SYSTEMS G.K.• FEI Company Japan Ltd.• Hamamatsu Photonics K.K.• HiSOL, INC.• Hitachi High-Tech Science Corporation• Hitachi High-Technologies Corporation• JEOL Ltd.• MARUBUN CORPORATION• MultiProbe Inc.• NGR Inc.• Nippon BARNES Company, Ltd.• Nippon Scientific Co., Ltd• Oki Engineering Co., Ltd.• Oxford Instruments K.K.• Park Systems Japan Inc.• Renesas Engineering Services, Co., Ltd.• Shining Technology Croporation• REVSONIC Corp.• TechnoLab Company• Toki Commercial Co., Ltd.• TOOL CORPORATION• TOYO Corporation• Wafer Integraton Inc.• YXLON International K.K.

(Rev.: 11-11–2015)

9