E

G

n-channel

C

*Qualification standards can be found at http://www.irf.com/

ULTRAFAST IGBT WITHULTRAFAST SOFT RECOVERY DIODE

Absolute Maximum RatingsStresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; andfunctional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured underboard mountedand still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified.

G C EG a te C o l le c to r E m it te r

AUTOMOTIVE GRADE

VCES = 600V

VCE(on) typ. = 1.8V

IC@TC=100°C = 41A

TJ max = 175°C

CooliRIGBT ™Features

• Designed And Qualified for Automotive Applications• Ultra Fast Switching IGBT:70-200kHz• Extremely Low Switching Losses• Maximum Junction Temperature 175 °C• Square RBSOA• Positive VCE (on) Temperature Coefficient

Applications• DC-DC Converter• PFC

Benefits• Optimized High Frequency Switching Applications• Rugged Transient Performance for Increased

Reliability• Excellent Current Sharing in Parallel Operation

Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 62IC @ TC = 100°C Continuous Collector Current 41INOMINAL Nominal Current @ 200kHz 20

ICM Pulse Collector Current 84

ILM Clamped Inductive Load Current 112

IF @ TC = 25°C Diode Continous Forward Current 46.1IF @ TC = 100°C Diode Continous Forward Current 30

IFRM Maximum Repetitive Forward Current 112

VGE Gate-to-Emitter Voltage ±20 V

PD @ TC = 25°C Maximum Power Dissipation 625PD @ TC = 100°C Maximum Power Dissipation 313TJ Operating Junction and

TSTG Storage Temperature Range

Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal ResistanceParameter Min. Typ. Max. Units

RθJC (IGBT) Junction-to-Case-(each IGBT) ––– ––– 0.24

RθJC (Diode) Junction-to-Case-(each Diode) ––– ––– 1.78

RθCS Case-to-Sink (flat, greased surface) ––– 0.24 –––

RθJA Junction-to-Ambient (typical socket mount) ––– ––– 40

––– 6.0 (0.21) ––– g (oz)

-55 to +175

°C/W

A

W

°C

!

TO-247ACAUIRGP65G40D0

G CE

TO-247ADAUIRGF65G40D0

Base part number Package Type Orderable Part NumberForm Quantity

AUIRGP65G40D0 TO-247AC Tube 25 AUIRGP65G40D0AUIRGF65G40D0 TO-247AD Tube 25 AUIRGF65G40D0

Standard Pack

G CE

!

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA

∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.18 — V/°C VGE = 0V, IC = 1.0mA (25°C-175°C)

— 1.4 — IC = 12A, VGE = 15V, TJ = 25°C

— 1.8 2.2 IC = 20A, VGE = 15V, TJ = 25°C

VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — IC = 12A, VGE = 15V, TJ = 150°C

— 2.6 — V IC = 20A, VGE = 15V, TJ = 150°C

— 2.2 — IC = 12A, VGE = 15V, TJ = 175°C

— 3.0 — IC = 20A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 3.0 — 5.5 V VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -12 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)

gfe Forward Transconductance — 36 — S VCE = 50V, IC = 20A

ICES Collector-to-Emitter Leakage Current — 3.2 25 µA VGE = 0V, VCE = 600V

— 0.81 — mA VGE = 0V, VCE = 600V, TJ = 175°C

VFM Diode Forward Voltage Drop — 1.7 2.45 V IF = 20A

— 1.4 — IF = 20A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)Parameter Min. Typ. Max. Units

Qg Total Gate Charge (turn-on) — 180 270 IC = 20A

Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V

Qgc Gate-to-Collector Charge (turn-on) — 64 96 VCC = 400V

Eon Turn-On Switching Loss — 298 389 IC = 20A, VCC = 400V, VGE = 15V

Eoff Turn-Off Switching Loss — 147 234 µJ RG = 4.7Ω, L = 485µH, TJ = 25°C

Etotal Total Switching Loss — 445 623 Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 35 53 IC = 20A, VCC = 400V, VGE = 15V

tr Rise time — 12 29 ns RG = 4.7Ω, L = 485µH, TJ = 25°C

td(off) Turn-Off delay time — 142 163

tf Fall time — 15 32

Eon Turn-On Switching Loss — 630 — IC = 20A, VCC = 400V, VGE=15V

Eoff Turn-Off Switching Loss — 137 — µJ RG = 4.7Ω, L = 485µH, TJ = 175°C

Etotal Total Switching Loss — 767 — Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 33 — IC = 20A, VCC = 400V, VGE = 15V

tr Rise time — 12 — ns RG = 4.7Ω, L = 485µH

td(off) Turn-Off delay time — 165 — TJ = 175°C

tf Fall time — 16 —

Cies Input Capacitance — 4673 — pF VGE = 0V

Coes Output Capacitance — 337 — VCC = 30V

Cres Reverse Transfer Capacitance — 58 — f = 1.0Mhz

Coes eff. Effective Output Capacitance (Time Related) — 406 — VGE = 0V, VCE = 0V to 480V

Coes eff. (ER) Effective Output Capacitance (Energy Related) — 162 —

TJ = 175°C, IC = 80A

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp 600V

Rg = 4.7Ω, VGE = +20V to 0V

trr Diode Reverse Recovery Time — 41 — ns TJ = 25°C IF = 20A, VR = 200V,

— 70 — TJ = 125°C di/dt = 200A/µs

Qrr Diode Reverse Recovery Charge — 116 — nC TJ = 25°C IF = 20A, VR = 200V,

— 580 — TJ = 125°C di/dt = 200A/µs

Irr Peak Reverse Recovery Current — 4.8 — A TJ = 25°C IF = 20A, VR = 200V,

— 7.2 — TJ = 125°C di/dt = 200A/µs

Conditions

through are on page 13

" !

Fig. 2 - Maximum DC Collector Current vs.Case Temperature

Fig. 3 - Power Dissipation vs. CaseTemperature

25 50 75 100 125 150 175

TC (°C)

0

10

20

30

40

50

60

70

I C (

A)

25 50 75 100 125 150 175

TC (°C)

0

100

200

300

400

500

600

700

Pto

t (W

)

Fig. 5 - Reverse Bias SOATJ = 175°C; VGE =20V

10 100 1000

VCE (V)

1

10

100

1000

I C (

A)

#$%&'()%*&'+,-

#./$+0'1$≤ 20'13+3

1 10 100

f , Frequency ( kHz )

30

40

50

60

70

80

90

100

Load

Cur

rent

( A

)

For both:Duty cycle : 50%Tj = 175°CGate drive as specified

Tc = 110°C

Tc = 80°C

I

Square Wave:

VCC

Diode as specified

1 10 100 1000

VCE, Collector-to-Emitter Voltage (V)

0.01

0.1

1

10

100

1000

I C,

Col

lect

or-t

o -E

mitt

er C

urre

nt (

A)

Tc = 25°CTj = 175°CSingle Pulse

1msec

10msec

OPERATION IN THIS AREA LIMITED BY V CE(on)

100µsec

DC

4 !

Fig. 10 - Typical VCE vs. VGETJ = 25°C

Fig. 11 - Typical VCE vs. VGETJ = 175°C

Fig. 9 - Typ. Transfer CharacteristicsVCE = 50V; tp = 30µs

0 2 4 6 8 10

VGE, Gate-to-Emitter Voltage (V)

0

20

40

60

80

100

I C, C

olle

ctor

-to-

Em

itter

Cur

rent

(A

)

TJ = 25°C

TJ = 175°C

5 10 15 20

VGE (V)

0

2

4

6

8

10

VC

E (

V)

ICE = 10A

ICE = 20A

ICE = 40A

5 10 15 20

VGE (V)

0

2

4

6

8

10

VC

E (

V)

ICE = 10A

ICE = 20A

ICE = 40A

Fig. 8 - Typ. IGBT Output CharacteristicsTJ = 175°C; tp = 30µs

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

I CE

(A

)

VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V

Fig. 7 - Typ. IGBT Output CharacteristicsTJ = 25°C; tp = 30µs

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

I CE

(A

)

VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V

Fig. 6 - Typ. IGBT Output CharacteristicsTJ = -40°C; tp = 30µs

0 2 4 6 8 10

VCE (V)

0

20

40

60

80

100

I CE

(A

)VGE = 18VVGE = 15VVGE = 12VVGE = 10VVGE = 9.0VVGE = 8.0VVGE = 7.0VVGE = 6.5VVGE = 6.0V

!

Fig. 15 - Typ. Energy Loss vs. RGTJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V

0 20 40 60 80 100 120

RG (Ω)

0

200

400

600

800

1000

1200

1400

1600

1800

Ene

rgy

(µJ)

EOFF

EON

Fig. 13 - Typ. Energy Loss vs. ICTJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V

Fig. 14 - Typ. Switching Time vs. ICTJ = 175°C; L = 0.49mH; VCE = 400V, RG = 4.7Ω; VGE = 15V

0 5 10 15 20 25 30 35 40

IC (A)

0

200

400

600

800

1000

1200

1400

1600

Ene

rgy

(µJ)

EOFF

EON

0 10 20 30 40 50

IC (A)

1

10

100

1000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

Fig. 17- Typ. Output CapacitanceStored Energy vs. VCE

0 100 200 300 400 500 600 700

Voltage (V)

0

5

10

15

20

25

30

35

Eoe

s (µ

J)

Fig. 16 - Typ. Switching Time vs. RGTJ = 175°C; L = 0.49mH; VCE = 400V, ICE = 20A; VGE = 15V

0 20 40 60 80 100 120

RG (Ω)

10

100

1000

10000

Sw

ichi

ng T

ime

(ns)

tR

tdOFF

tF

tdON

Fig. 12 - Typ. Diode Forward Characteristics tp = 30µs

0.0 1.0 2.0 3.0

VF (V)

0

20

40

60

80

100

I F (

A)

TJ = 25°C

TJ =175°C

5 !

Fig. 18 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz

0 100 200 300 400 500

VCE (V)

10

100

1000

10000

100000C

apac

itanc

e (p

F)

Cies

Coes

Cres

Fig. 19 - Typical Gate Charge vs. VGE ICE = 20A; L = 200µH

0 50 100 150 200

Q G, Total Gate Charge (nC)

0

2

4

6

8

10

12

14

16

VG

E, G

ate-

to-E

mitt

er V

olta

ge (

V)

VCES = 400V

Fig. 20 - Typ. Diode IRR vs. RGTJ = 175°C

0 10 20 30 40 50 60

RG (Ω)

20

25

30

35

40

45

50

I RR

(A

)

2 !

#$%(%'(6#$%((%(6

#$%'7(6 #$%6(6!

100 1000

diF/dt (A/µs)

0

20

40

60

80

100

120tr

r (n

s)VR = 200V

TJ = 25°C _____

TJ = 125°C ----------

IF = 40A

IF = 20A

IF = 10A

100 1000

diF/dt (A/µs)

0

5

10

15

20

25

30

I RR

M (

A)

IF = 40A

IF = 20A

IF = 10A

VR = 200V

TJ = 25°C _____

TJ = 125°C ----------

100 1000

diF/dt (A/µs)

0

200

400

600

800

1000

1200

1400

1600

Qrr

(nC

)

IF = 40A

IF = 20A

IF = 10A

VR = 200V

TJ = 25°C _____

TJ = 125°C ----------

100 1000

diF/dt (A/µs)

0

400

800

1200

1600

2000

di(r

ec)M

/ dt

(A

/µs)

IF = 40A

IF = 20A

IF = 10A

VR = 200V

TJ = 25°C _____

TJ = 125°C ----------

!

Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1T

herm

al R

espo

nse

( Z

thJC

)

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

Ci i/RiCi= τi/Ri

ττC

τ4

τ4

R4

R4 Ri (°C/W) τi (sec)0.00604 0.000009

0.05590 0.000119

0.10879 0.003033

0.07706 0.018527

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

The

rmal

Res

pons

e (

Z th

JC )

0.200.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

τJ

τJ

τ1

τ1τ2

τ2 τ3

τ3

R1

R1 R2

R2 R3

R3

Ci i/RiCi= τi/Ri

ττC

τ4

τ4

R4

R4 Ri (°C/W) τi (sec)0.04565 0.000043

0.60669 0.000490

0.65528 0.004983

0.38139 0.041994

8 !

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

0

1K

VCCDUT

L

L

Rg

80 V

DUT VCC

+-

Fig.C.T.5 - Resistive Load Circuit

Rg

VCCDUT

R = VCC

ICM

Fig.C.T.3 - S.C. SOA Circuit

DC

4X

DUT

VCC

SCSOA

Fig.C.T.4 - Switching Loss Circuit

L

Rg

VCCDUT /DRIVER

diode clamp /DUT

-5V

!

Fig. WF1 - Typ. Turn-off Loss Waveform@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform@ TJ = 175°C using Fig. CT.4

Fig. WF3 - Reverse Recovery Waveform andDefinitions

ta tb

trr

Qrr

IF

I RRM I RRM0.5

di(rec)M/dt

0.75 IRRM

5

4

3

2

0

1 di /dtf

! " ##

#

$ !# %%# %" ## & '##()(( *' "

-100

0

100

200

300

400

500

600

700

-0.2 -0.1 0 0.1 0.2 0.3

time(µs)

VC

E (V

)

-10

0

10

20

30

40

50

60

70

ICE

(A)

90% ICE

5% VCE10% ICE

Eoff

tf

-100

0

100

200

300

400

500

600

700

-0.2 -0.1 0 0.1 0.2 0.3

time (µs)

VC

E (V

)

-10

0

10

20

30

40

50

60

70

ICE

(A)

T ES T CUR R ENT

90% test current10% test

current

tr

Eon Loss

5% VCE

!

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!!!!

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Notes: VCC = 80% (VCES), VGE = 20V, L = 485µH, RG = 4.7Ω, tested in production ILM ≤ 400A. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Rθ is measured at TJ of approximately 90°C. Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed

capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. ! " # $ %&'"

Qualification Information†

Moisture Sensitivity Level TO-247AC N/A

TO-247AD N/A

RoHS Compliant Yes

ESD

Machine Model Class M4 (+/- 400V)††

AEC-Q101-002

Human Body Model Class H3B (+/- 8000V)††

AEC-Q101-001

Charged Device Model

Class C5 (+/- 1000V)††

AEC-Q101-005

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive qualification. IR’s Industrialand Consumer qualification level is granted by extension of the higher Automotivelevel.

4 !

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Date Comments

9/8/2015 • Removed "short circuit rating on page 1 & 2.

Revision History