curriculum vitae of shaikh shahid ahmed · curriculum vitae of shaikh shahid ahmed i. professional...

SHAIKH SHAHID AHMED CURRICULUM VITAE OCTOBER 2017 1

CURRICULUM VITAE OF SHAIKH SHAHID AHMED

I. PROFESSIONAL AFFILIATION AND CONTACT INFORMATION

Position : Professor

Department : Department of Electrical and Computer Engineering

College of Engineering

Southern Illinois University at Carbondale

1230 Lincoln Drive

Mail Code 6603

Carbondale, IL 62901

Phone : (618) 453-7630

Fax : (618) 453-7972

E-mail : [email protected]

[email protected]

URL : http://www.engr.siu.edu/staff1/ahmed/mywebpage/ahmed.html

http://engineering.siu.edu/elec/faculty-staff/faculty/ahmed.php

II. PROFESSIONAL PREPARATION

Postdoctoral Research (Feb 2005–Aug 2007)

NSF Network for Computational Nanotechnology

School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA

Supervisor: Professor Gerhard Klimeck

Research Area: Million-Atom Electronic Structure and Quantum Transport in Nanoscale Devices, Development

of Open-Source Nanoelectronics Software

Doctor of Philosophy in Electrical Engineering (2005)

Nanostructures Research Group

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, USA

Supervisor: Professor Dragica Vasileska

Committee Members: Profs. David Ferry, Dieter Schroder, Christian Ringhofer, Stephen Goodnick

Dissertation: Quantum and Coulomb Effects in Nanoscale Devices

Master of Science in Electrical Engineering (2003)

Solid State Electronics and Nanostructures Research Group,

School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, USA

Thesis: Modeling Silicon-on-Insulator Devices

Bachelor of Science in Electrical and Electronic Engineering (1998)

Bangladesh University of Engineering & Technology (BUET), Dhaka, Bangladesh

Senior Design Project: Designing a Log-Periodic Yagi-Uda Antenna

http://www.engr.siu.edu/elec/

http://www.siuc.edu/

mailto:[email protected]

http://www.asu.edu/

http://www.asu.edu/

http://www.buet.ac.bd/


III. ACADEMIC AND PROFESSIONAL EXPERIENCE

July 1, 2015 – date: Professor, Department of Electrical and Computer Engineering, Southern Illinois

University at Carbondale (SIUC), Illinois, USA.

July 1, 2010 – June 30, 2015: Associate Professor, Department of Electrical and Computer Engineering,

Southern Illinois University at Carbondale (SIUC), Illinois, USA.

Aug 16, 2007 – June 30, 2010: Assistant Professor, Department of Electrical and Computer Engineering,

Southern Illinois University at Carbondale (SIUC), Illinois, USA.

Feb 1, 2005 – Aug 15, 2007: Postdoctoral Research Associate, School of Electrical and Computer

Engineering, Purdue University, West Lafayette, Indiana, USA.

March 1, 2003 – Dec 15, 2004: Graduate Research Associate, School of Electrical, Computer and Energy

Engineering, Arizona State University, Tempe, Arizona, USA.

February 15, 2001 – February 28, 2003: Graduate Research Assistant, School of Electrical, Computer and

Energy Engineering, Arizona State University, Tempe, Arizona, USA.

Jan 10, 1999 – Jan 10, 2001: Lecturer, Islamic University of Technology, Gazipur, Dhaka, Bangladesh.

Sep 15, 1998 – Jan 6, 1999: Teaching Assistant, Bangladesh University of Engineering and Technology

(BUET), Dhaka, Bangladesh.

IV. RESEARCH AND CREATIVE ACTIVITY

A. INTERESTS AND SPECIALTIES

Our research focuses mainly in the area of theoretical and extreme-scale computational

nanoelectronics with particular efforts to address technological challenges and bottlenecks and explore

possible solutions. We are working on and interested in the atomistic and quantum-mechanical modeling

of electronic structure and transport in nanostructures including conventional and non-conventional

field-effect transistors (FETs), carbon nanotubes and semiconductor nanowires, quantum dots and

nanocrystals, nanoscale thermoelectrics and piezoelectric energy-harvesting devices, solid-state

lighting sources and their reliability, and nanoelectronic devices for harsh environments. The goal is

three-fold: (1) Understand the fundamental physical processes; (2) Explore and exploit nanoscale

degrees-of-freedom for the purpose of device performance and reliability optimization; and (3) Create

cyber-enabled community nanoelectronics simulation tools/software that can be used by other

researchers, educators, and students. Research and computational efforts in our group make extensive

use of advanced algorithms and state-of-the-art high-performance cluster and CPU/GPGPU

distributed computing platforms.

B. CURRENT RESEARCH PROJECTS/TOPICS

Nanostructures: (1) Fundamental studies of quantum and atomistic symmetry-lowering fields in

nanostructures and their influence on electronic structure and optical properties of nanostructures

(mainly quantum dots, nanowires, and combination) based on SiGe, InGaAs, InAsSb, InGaN, AlGaN,

SiC, ZnO, CdTe, Bi2Te3, Graphene, etc. (2) Multimillion atom modeling of thermal conductivity in

semiconductor nanowires as a function of diameter, crystal orientation, surface capping, temperature,

composition/alloying etc.

Semiconductor Devices: More Moore—(1) Performance assessment of Si and III-V tri-gate, nanowire,

junctionless, and MoS2 based FETs for 2020 and beyond: interplay of bandstructure, charge and

http://www.asu.edu/

http://www.asu.edu/


phonon transport, and statistical fluctuations. (2) Asymmetries in tunneling FETs: challenges and

opportunities. (3) Effects of structural modification on the reliability of nanoscale nitride HEMTs.

More-Than-Moore (energy harvesting/saving devices): (1) Fundamental studies of lumen depreciation

and efficiency droop in nitride based solid-state lighting (SSL) devices. (2) Multiscale design and 3-D

printing of a thermoelectric cooler unit.

Algorithms and Computing: (1) Development of a quantum atomistic device simulator (QuADS 3-D)

for realistically-sized nanoscale devices that integrates LAMMPS molecular dynamics (for structural

optimization), NEMO 3D multimillion-atom Hamiltonian solver for bandstructure, non-equilibrium

Green function (NEGF) and electron/phonon Monte Carlo for transport, and Geant4 for particle

interaction, with the capability of handling more than 1 billion atoms. (2) Developing fast and

memory-miserly algorithms for quantum transport simulations using the NEGF approach. (3)

Developing a parameter-free effective quantum-field model for multi-band charge and phonon

transport in nanoscale devices. (4) Charge transport in disordered materials/devices.

C. SIGNIFICANT R&D ACHIEVEMENTS

(2010-date) Development of a Quantum Atomistic Device Simulator: As semiconductor devices shrink

into the nanoscale regime and new classes of devices emerge, performance and reliability of

nanosystems engineered from these devices are fundamentally governed by an intricate interplay of

long-range structural and built-in electrostatic fields (strain, polarization, applied and environmental

biases), atomistic/granular (defects, disorder, surface relaxation) effects on the bandstructure, quantum

mechanical size-quantization, and nonlinear, highly stochastic and dynamically-coupled charge and

phonon transport processes. Today’s nanoscale devices exploit physical processes at a scale where the

number of atoms in the active region is on the order of 10,000 to more than 100 million! Therefore,

modeling of nanodevices, to be adequately accurate yet computationally efficient, must employ a multiscale

and modular approach. With an objective to bridge the gap between atomistic and continuum modeling

paradigms, for the past several years, Ahmed’s Group at SIU, with generous financial and

computational support from the National Science Foundation, DOE ORNL/ORAU, and industry

partners, has been developing a multiscale Quantum Atomistic Device Simulator (QuADS 3-D) where:

a) material parameters are obtained atomistically using first-principles, b) structural relaxation and

phonon dispersions are studied via molecular mechanics/dynamics, c) a variety of tight-binding

models (s, sp3s*, sp3d5s*) are used for the calculation of electronic bandstructure and interband

transition rates as available and augmented in the open source NEMO 3D code, and d) coupled

charge-phonon transport is simulated using a combined Monte Carlo-NEGF framework .

(2006-2009) Novel algorithms for non-equilibrium Green function (NEGF) quantum transport

formalism: The Non-Equilibrium Green’s Function (NEGF) approach is considered as the state-of-the-

art modeling tool for predicting performance and designing emerging nanoscale devices. However,

accurate and reliable modeling of the future nanoscale devices requires huge computational efforts, yet

the current NEGF algorithms are prohibitively expensive. Collaborated with Stanford University,

NASA Ames, University of Alabama, and Purdue University for the development and implementation

of novel algorithms and methodologies for the calculations of non-equilibrium Green’s functions and

associated charge densities from large sparse matrices describing the underlying nanoscale systems.

Different parallel computing methodologies using MPI and OpenMP were studied and implemented

in these application software for achieving optimum speed/memory performance.

(2005-date) Development of parameter-free effective potential model for quantum transport: In the

nanoscale regime, charge transport in a semiconductor device is dominated by quantum

effects throughout the active region. For a full quantum mechanical description, various quantum

formalisms based on density matrices, Wigner functions, Feynman path integrals, and non-equilibrium

Green’s functions (NEGF) have been developed and proposed with varying success to address these


issues. The Green’s functions approach is the most exact, but accurate and full three-dimensional

modeling of scattering-dominated transport in realistically-sized semiconductor devices using the

NEGF approach is prohibitively expensive and the computational burden needed for its actual

implementation are perceived as a great challenge. On the other hand, within the semiclassical

Boltzmann transport formalism, for modeling quantum effects in nanostructures, recently, different

forms of quantum effective potentials have been proposed. Along that line, herein, we have developed

a novel parameter-free effective potential scheme for use in conjunction with Monte Carlo particle-based

simulations. The method is based on a perturbation theory around thermodynamic equilibrium and

leads to a quantum field formalism in which the size of an electron depends upon its energy. The approach

when used in the simulations of a conventional and novel nanoscale MOSFETs is found to provide

satisfactory level of accuracy and produce correct experimentally verified threshold voltage shifts and

drain current degradation.

(2010-date) Coulomb/impurity effects and device performance issues: Silicon based MOSFET is the

most widely used semiconductor device in existence today, constituting about 90% of the device

market. The tremendous growth in semiconductor industry, over the past four decades, has been

achieved through continuous downscaling of Si-MOSFETs, which was described by Moore’s law.

Nevertheless, device scaling (beyond the 9nm-node) is finally facing its limits due mainly to excessive

power consumptions. To sustain the growth in semiconductor device industry, researchers envision

the use of a) smart materials (such as III-V, graphene/carbon nanotubes, nanowire, MoS2); b) device

architectures (such as SOI, FinFET, nanowire); and c) quantum processes (e.g. tunnel FETs) in computing,

data and signal processing and communication systems. Nevertheless, these novel devices are subject

to the deleterious effects of process variations at nanoscale, which lead to large fluctuations

(characterized by the standard deviation in the ON-current and the threshold voltage) due mainly to the

presence of randomly distributed dopants in the channel and the source/drain regions. This work aims

to computationally investigate and study how the interplay of quantum size-quantization and random

dopant fluctuations (RDF) affect the device performance and how to curb these issues.

(2011-date) Fundamental studies of electronic structure and efficiency droop in III-V optical emitters:

Recently, optical emitters using InGaN nanostructures have attracted much attention for applications

in lasers, solid-state lighting, near-field photolithography, free-space quantum cryptography,

consumer displays, as well as diagnostic medicine and imaging. Nanostructures can accommodate a

broader range of lattice mismatch thereby allowing full-solar-spectrum emission characteristic, and

provide larger active surface area and higher temperature stability. Nevertheless, performance of these

III-N LEDs is determined by an intricate interplay of complex, nonlinear, highly stochastic and

dynamically-coupled structural fields, charge, and thermal transport processes at different length and

time scales. In this project, we have studied the effects of these coupled processes on the electronic and

optical emission properties in nanostructured III-N LEDs. The multiscale computational framework

employs the atomistic valence force-field molecular mechanics, the 10-band sp3s*-SO tight-binding

models, and a coupling to a TCAD toolkit to determine the terminal properties of the device. A series

of numerical experiments have been performed (by varying different nanoscale parameters such as

size, geometry, crystal cut, composition, surface and contacts, and electrostatics) that mainly aim to

improve the efficiency droop and reliability of these LEDs.

(2012-date) Multiscale design of nanostructured thermoelectric coolers: Site-specific active cooling

using low-dimensionality thermoelectric (TE) devices has become a very promising, cost-effective,

environmentally safe and portable cooling solution with potential applications in high-performance

integrated circuits. These modern chips have specific areas of high heat fluxes causing hot spots that

limit the chip’s reliability and performance. Recently, integration/embedding of Bi2Te3 superlattice

based thin-film thermoelectric coolers into state-of-the-art electronic packages has been experimentally

demonstrated and active cooling of as much as 15 ºC at the hot spot on a silicon chip with a high heat


flux (~1,300 Wcm-2) has been reported. In this project, we: a) Develop a multiscale simulator for

modeling non-classical nanostructured Bi2Te3, nitride and ZnO thermoelectric devices. The simulator

will have the capability of handling devices containing millions of atoms; b) Investigate, In a model TE

device, the competing effects of atomicity (due to underlying lattice, defects and impurity clustering,

alloying and mixed lattice in multicomponent structures, crystal orientation, amorphization of surface

and interlayers), various long-range built-in structural and electrostatic fields (interface symmetry,

surface and strain relaxations, piezoelectric and pyroelectric polarization), size-quantization, and

operating temperature on the coupled electro-phonon transport processes at nanoscale and their

influence on the performance of TE devices; and c) Use a 3-D additive printer to create the prototype of

a TEC unit and use it for cooling of a heated integrated circuit. The performance of the TEC unit will be

characterized via mapping the Temperature vs. Bias Current characteristic.

(2017-date) Atomistic studies of HEMT Reliability Issues: High electron mobility transistors (HEMTs)

based on nitride material systems feature a unique combination of high breakdown voltage, high

output power, high efficiency, wide bandwidth, low noise, and temperature and radiation hardness

and have great potential in applications such as wireless communication, homeland security, radar

and satellite systems, as well as emerging harsh-environment computing, sensing, cloud-networking

and power conversion electronics. However, issues related to long-term reliability of these devices

remain a major concern. Reliability can be defined as the probability of operating a system for a given

time under specified conditions without failure. For semiconductor devices, unrecoverable change of a

device parameter (such as degradation in the output current) may be considered as a failure. As

evidenced in recently reported stress or accelerated tests, high temperature gradients (thermal effect),

high electric fields and built-in or induced mechanical stresses (inverse piezoelectric effect), and high

current densities (hot carrier effect) may all induce damages or defects in the constituent materials and

ultimately lead to device failure. Yet, the exact physical mechanisms governing the defect formation as

well as the nature and distribution of these defects are still not clearly understood. This poses a

significant challenge to not only interpreting the experimental results but also predicting or

extrapolating the device lifetime, tasks that are critical, for example, for devices used in remote

applications. It is well acknowledged that to study physical processes that are experimentally

intractable, numerical modeling becomes essential. In this NSF supported project, we are developing a

multiscale and multiphysics simulation framework (HEMT 3-D) for modeling the time evolution of and

the physical mechanisms responsible for AlGaN/GaN HEMT degradation. The project will help

scientists and engineers working in this area to fine-tune their models and achieve sophistication in

device design for improved performance and reliability.

(2006-date) Computational science and engineering for the community:

Based on the research done over the past decade, it has been well-acknowledged and proven that

simulation is an important research methodology in the fields of nanoscience and nanoengineering, and

it is possible to accelerate the transformation of nanoscience to nanotechnology/nanosystems through

the integration of simulation with experimentation. However, simulator development itself is not

enough—the tools need to be deployed to the user community so that it can be made more flexible and

accurate. With that vision, since 2002, the NSF through its science cyberinfrastructure nanoHUB.org

has been offering a set of cyber services including interactive online simulation, tutorials, seminars,

and online courses packaged using e-learning standards. All the services are freely open to the public.

We have authored/co-authored 11 nanoelectronics software tools (namely: nanoFET, CNTFET, QuaMC 2D,

Schred, nanoMOS, FETtoy, MOSFET, MOScap, QPC, multiscaleTEC, and nanoSSL) that have been

published (with DOI) on National Science Foundation’s nanoHUB.org. As of March 20, 2017, these

simulators have served over 15,600 individual users worldwide running over 708,000 simulations

(https://nanohub.org/members/9293/usage).


Shaikh Ahmed is the recipient of 2009 Oak Ridge National Lab High-Performance Computing Award.

His group has successfully scaled their software on more than 130,000 cores in Jaguar supercomputer.

Shaikh Ahmed is the Principal Investigator of the NSF funded Southern Illinois High Performance

Computing Research Infrastructure. The HPC infrastructure has not only increased SIUC’s capacity of

research within the Computational Nanoscience and Engineering (CNE) and Geographic Information

Science (GIS) communities but also served as a regional center for learning practical high-end

computing and IT skills.

Also, at SIU, Shaikh Ahmed, in collaboration with colleagues in the C&I and CS departments, has

spearheaded “Partnership for Improved Achievement in Science through Computational Science”, an ISBE

funded initiative to train K-12 science teachers in computer simulations and visualization tools to

develop reasoning about abstract scientific concepts and phenomena, access cutting-edge scientific

research, and engage in authentic practices of science.

D. GRANTS RECEIVED

1. Principal Investigator, CDS&E: Coupled Thermal, Piezoelectric, and Hot Carrier Effects in

AlGaN/GaN HEMTs: Multiscale Modeling of Time Evolution of Device Degradation, National

Science Foundation (NSF), award no. 1610474, funds received $282,815, 9/1/2016–8/31/2019.

2. Co-Principal Investigator, Novel Chalcogenide Derivatives for Thermoelectric Energy Conversion

(PI: Thushari Jayasekera), funds received: $20,000, SIU MTC Seed Grant (1/1/2015-5/15/2016).

3. Senior Personnel, NSF DMR: REU Site in Interdisciplinary Materials Research, National Science

Foundation (NSF), (PI: Boyd Goodson), award no. 1461255, funds received: $330,000, Period:

4/1/2015 – 09/1/2017.

4. Principal Investigator, NSF Research Experience for Undergraduates (REU) Supplement (NSF SHF:

Embedded cooling of high-performance ICs using Novel nanostructured thermoelectrics:

Multiscale Software development and device optimization), National Science Foundation (NSF),

award no. 1442021, funds received $16,000, 7/1/2014–6/30/2016.

5. Principal Investigator, SHF: Embedded cooling of high-performance ICs using Novel

nanostructured thermoelectrics: Multiscale Software development and device optimization,

National Science Foundation (NSF), award no. 1218839, funds received $149,921, 7/1/2012–

6/30/2016.

6. Principal Investigator, Multiscale computational studies on the degradation mechanisms in

nanoscale nitride-based HEMT devices, User Nanoscience Research Program Award, DOE Oak

Ridge National Laboratory, award no. CNMS2011-228, collaboration time with a research

scientist (valued $20,720 by ORNL) and access to HPC platforms, 8/1/2011–7/31/2012.

7. Principal Investigator, Role of coupled structural-thermal-material processes in the failure

mechanism of a high-speed bearing assembly, United Technologies and Center for Embedded

Systems (CES), funds received: $25,000, 8/16/2011–8/15/2012, co-PI: Jun Qin, Philip Chu.

8. Principal Investigator, ECCS: Fundamental studies of efficiency droop in III-nitride solid-state

lighting devices, National Science Foundation (NSF), award no. 1102192, funds received:

$252,329, 8/1/2011–7/31/2016.

9. Co-Principal Investigator, Partnership for improved achievement in science through computational

science, PI: Frackson Mumba, co-PIs: Mesfin Tsige, Michelle Zhu, Kevin Wise, Illinois State Board

of Education (ISBE), funds received: ~$530,000, 7/2010 -9/2012.

10. Principal Investigator, Modeling bandstructure effects in nanoscale solid-state lighting devices, SIU

Faculty Research Grant, funds: $19,176 (7/1/2010–6/30/2011)


11. Principal Investigator, Southern Illinois HPC Infrastructure (SIHPCI), National Science Foundation

(NSF), award no. 0855221, funds received: $360,779.00, 9/1/2009–8/31/2012 [co-PIs: Mark Byrd,

Tony Oyana, Qiang Cheng, Mesfin Tsige].

12. Principal Investigator, Multimillion-Atom Modeling of Nanoelectronic Materials and Devices for

Harsh Environments, DOE Oak Ridge National Laboratory and ORAU, funds received: $75,000

and access to ORNL supercomputing platforms, 5/15/2009–5/14/2012.

E. HONORS AND AWARDS

1. Air Force Research Lab (AFRL) Summer Faculty Fellowship, Wright-Patterson Base, OH, 2016

2. Dean Juh Wah Chen Outstanding Faculty Award 2013, SIU College of Engineering

3. ECE Department Teacher of the Year 2014

4. IEEE Senior Member 2013

5. 1st Place, Physical Sciences, Research Town-Hall Meeting, Southern Illinois University, 2012

6. Keynote speaker, Engineering Week, Southeast Missouri State University, 2011

7. Research featured in nanotechweb.org on 8/12/2011, “Supercomputers model real-world quantum

dot devices 'atom-by-atom'”

8. Workshop featured in The Southern on 2/28/2011, “SIUC brings iPads to classrooms”

9. 3rd Place, Physical Sciences, Research Town-Hall Meeting 2011, Southern Illinois University, 2011

10. ECE KHN (eta kappa nu) Honor Society, 2010

11. Keynote speaker at the NSF NCN Workshop on Simulation-based Learning, November 2009

12. DOE Oak Ridge National Lab High-Performance Computing (HPC) Award, 2009

13. Recognized/featured in The Saluki Times (May 1, 2009) and The Southern Illinoisan (May 2, 2009)

for the accomplishment in high-performance computing efforts at SIUC

14. Graduate Tuition Scholarship, 2001–04, Arizona State University

15. Sweden-Bangladesh Education Travel Grant 2001

16. BUET Dean’s List Scholarship 1997-8

17. BUET Merit Scholarship 1995-8

18. Ministry of Education Merit Scholarship, Bangladesh, 1986-94

19. Who's Who in Science and Engineering 2011-2012

20. Who's Who in America 2007

21. Who’s Who in Engineering Academia 2009

V. PUBLICATIONS AND CREATIVE ACTIVITY

A. SCIENTIFIC SOFTWARE

We have authored/co-authored 11 nanoelectronics software that have been published (with DOI) on

National Science Foundation’s nanoHUB.org and freely available for public use. As of October 9, 2017,

these simulators have served over 28,200 individual users worldwide running over 776,000

simulations (https://nanohub.org/members/9293/usage). Listed below are the references:

1. Shaikh S. Ahmed; Dragica Vasileska (2014), “QuaMC2D,”

https://nanohub.org/resources/quamc2d. (DOI: 10.4231/D3542J801).

http://www.orau.org/consortium/programs/


2. Dragica Vasileska; Shaikh S. Ahmed; Gokula Kannan; Matteo Mannino; Gerhard Klimeck; Mark

Lundstrom; Akira Matsudaira; Junzhe Geng (2013), “Schred,”

https://nanohub.org/resources/schred. (DOI: 10.4231/D3HT2GB8Z).

3. Neophytos Neophytou; Shaikh S. Ahmed; Eric Polizzi; Gerhard Klimeck; Mark Lundstrom (2012),

“CNTFET Lab,” https://nanohub.org/resources/cntfet. (DOI: 10.4231/D32B8VB3H).

4. M. P. Anantram; Shaikh S. Ahmed; Alexei Svizhenko; Derrick Kearney; Gerhard Klimeck (2011),

“NanoFET,” https://nanohub.org/resources/nanofet. (DOI: 10.4231/D34T6F314).

5. Zhibin Ren; Sebastien Goasguen; Akira Matsudaira; Shaikh S. Ahmed; Kurtis Cantley; Yang Liu;

Mark Lundstrom; Xufeng Wang (2013), “NanoMOS,” https://nanohub.org/resources/nanomos.

(DOI: 10.4231/D3J96090H).

6. Gerhard Klimeck; Akira Matsudaira; Shaikh S. Ahmed; Dragica Vasileska; Saumitra Raj Mehrotra;

Xufeng Wang (2014), “MOSCap,” https://nanohub.org/resources/moscap. (DOI:

10.4231/D3TM72116).

7. Shaikh S. Ahmed; Saumitra Raj Mehrotra; SungGeun Kim; Matteo Mannino; Gerhard Klimeck;

Dragica Vasileska; Xufeng Wang; Himadri Pal; Gloria Wahyu Budiman (2014), “MOSFet,”

https://nanohub.org/resources/mosfet. (DOI: 10.4231/D3WW7704N).

8. Anisur Rahman; Jing Guo; Md. Sayed Hasan; Yang Liu; Akira Matsudaira; Shaikh S. Ahmed;

Supriyo Datta; Mark Lundstrom (2014), “FETToy,” https://nanohub.org/resources/fettoy. (DOI:

10.4231/D3RV0D12Z).

9. Richard Akis; Shaikh S. Ahmed; Mohammad Zunaidur Rashid; David K. Ferry (2015), "Quantum

Point Contact,” https://nanohub.org/resources/qpc. (DOI: 10.4231/D3H70817B).

10. Allison Anne Campbell; Mohammad Zunaidur Rashid; Afsana Sharmin; Shaikh S. Ahmed (2015),

“Multiscale Modeling of Thermoelectric Cooler,” https://nanohub.org/resources/multiscaletec.

(DOI: 10.4231/D3707WP8J).

11. Shaikh S. Ahmed; Vinay Uday Chimalgi; Katina Mattingly; Krishna Kumari Yalavarthi (2015),

“Nanoscale Solid-State Lighting Device Simulator,” https://nanohub.org/resources/nanossl. (DOI:

10.4231/D3DR2P94F).

12. Mohammad Zunaidur Rashid; Sasi Sekaran Sundaresan; Shaikh S. Ahmed (2017), “Monte Carlo

Phonon Transport Simulator,” https://nanohub.org/resources/mcpt. (DOI: 10.4231/D3HX15S96)

B. BOOK CHAPTERS

13. Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu,

Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski,

Rick Kennel, Michael Mclennan, Timothy B. Boykin, and Gerhard Klimeck, “Multimillion Atom

Simulation of Electronic and Optical Properties of Nanoscale Devices using NEMO 3-D,”

Encyclopedia of Complexity and Systems Science, pp. 1–69, Springer Berlin Heidelberg, Ed. Robert A.

Meyers, Latest Version 24 July 2015.

14. Abdussamad Muntahi and Shaikh Ahmed, “MOSCap Tool on nanoHUB.org,” World Scientific

Review Volume, accepted, URL: https://nanohub.org/wiki/MOSCAPPage/MOSCapPrimer, 2017.

15. Abdussamad Muntahi, Dragica Vasileska, and Shaikh Ahmed, “A Primer on the MOSFET

Simulator on nanoHUB.org,” World Scientific Review Volume, accepted, URL:

https://nanohub.org/wiki/MOSFETLabPage/PrimerOnMOSFETSimulator, 2017.

16. Shaikh Ahmed, Mihail Nedjalkov, and Dragica Vasileska, “Comparative Study of Various Self-

Consistent Event Biasing Schemes for Monte Carlo Simulations of Nanoscale MOSFETs,” Theory

and Applications of Monte Carlo Simulations, Ed. Wai Kin (Victor) Chan, Chp. 5, pp. 109–133, 2013.


17. Shaikh Ahmed, Krishna Kumari Yalavarthi, Vamsi Gaddipati, Abdussamad Muntahi, Sasi

Sundaresan, Shareef Mohammed, Sharnali Islam, Ramya Hindupur, Dylan John, and Joshua

Ogden, “Quantum Atomistic Simulations of Nanoelectronic Devices using QuADS,” Nano-

Electronic Devices: Semiclassical and Quantum Transport Modeling, Eds. D. Vasileska and S. M.

Goodnick, Springer, pp. 405–441, 2011.

18. D. Vasileska, H. R. Khan, S. S. Ahmed, G. Kannan and C. Ringhofer, “Quantum and Coulomb

Effects in Nanodevices,” Nano-Electronic Devices: Semiclassical and Quantum Transport Modeling, Ed.

D. Vasileska and S. M. Goodnick, pp. 97–182, Springer, 2011.

19. Shaikh Ahmed, Neerav Kharche, Rajib Rahman, Muhammad Usman, Sunhee Lee, Hoon Ryu,

Hansang Bae, Steve Clark, Benjamin Haley, Maxim Naumov, Faisal Saied, Marek Korkusinski,

Rick Kennel, Michael Mclennan, Timothy B. Boykin, and Gerhard Klimeck, “Multimillion Atom

Simulations with NEMO 3-D,” Encyclopedia of Complexity and Systems Science, Meyers, Robert (Ed.),

vol. 6, pp. 5745–5783, Springer New York, 2009.

C. SCHOLARLY AND ACADEMIC PAPERS

PEER-REVIEWED JOURNALS/TRANSACTIONS/REVIEWS/PERIODICALS

20. Md. Rezaul Karim Nishat, Mayada M. Taher, and Shaikh S. Ahmed, “Million-Atom Tight-Binding

Modeling of Nonpolar a-Plane InGaN Light Emitters, submitted 2018.

21. Ye Wu, Zi-Chang Zhang, and Shaikh Ahmed, “First-Principles Investigation of Size-Dependent

Piezoelectric Properties of Bare ZnO and ZnO/MgO Core-Shell Nanowires,” submitted 2018.

22. Zi-Chang Zhang, Ye Wu, Chao Lu, and Shaikh Ahmed, “Electron Mobility in β-Ga2O3: Role of

Polar Optical Phonon Scattering,” submitted 2018.

23. Mayada Taher and Shaikh Ahmed, “III-Nitride Multiple Disk-in-Wire Laser Structures: Effects of

Crystal Orientation and Spacer Size,“ submitted 2018.

24. Khadija A. Khair and Shaikh S. Ahmed, “Effects of Uniaxial and Biaxial Strain on Polar Optical

Phonon Scattering and Electron Transport in Monolayer MoS2 FETs,” submitted 2018.

25. Md Rezaul Karim Nishat, Saad M. Alqahtani, Vinay U. Chimalgi, Neerav Kharche, and Shaikh S.

Ahmed, “Atomistic Modeling of Nonpolar m-Plane InGaN Disk-in-Wire Light Emitters,” Journal of

Computational Electronics, vol. 16, no. 3, pp. 814–824, 2017.

26. Saad Mubarak Al-Qahtani, Abdulmuin Abdullah, Md. Rezaul Karim Nishat and Shaikh Ahmed,

“Diameter Dependent Polarization in ZnO/MgO Disk-in-Wire Emitters: Multiscale Modeling of

Optical Quantum Efficiency,” Superlattices and Microstructures, vol. 103, pp. 48–55, 2017.

27. Vinay Chimalgi, Md. R. K. Nishat, and Shaikh Ahmed, “Nonlinear Piezoelectricity and Efficiency

Droop in Hexagonal In(Ga)N/GaN Disk-in-Wire LEDs,” Superlattices and Microstructures, vol. 84,

pp. 91–98, 2015.

28. Afsana Sharmin, Mohammad Rashid, Vamsi Gaddipati, Abu Sadeque, and Shaikh Ahmed,

“Multiscale Design of Nanostructured Thermoelectric Coolers: Effects of Contact Resistances,”

IEEE/TMS Journal of Electronic Materials, vol. 44, no. 6, pp. 1697–1703, 2015.

29. Shaikh Ahmed, Sasi Sundaresan, Hoon Ryu, and Muhammad Usman, “Multimillion-Atom

Modeling of InAs/GaAs Quantum Dots: Interplay of Geometry, Quantization, Atomicity, Strain,

and Linear and Quadratic Polarization Fields,” Journal of Computational Electronics, vol. 14, pp.

543–556, 2015.

30. Sasi Sundaresan, Vamsi Gaddipati, and Shaikh Ahmed, “Effects of Spontaneous and Piezoelectric

Polarization Fields on the Electronic and Optical Properties in GaN/AlN Quantum Dots:


Multimillion-Atom sp3d5s* Tight-Binding Simulations,” Int. J. Numer. Model., vol. 28, pp. 321–334,

2015.

31. Vinay Chimalgi, Krishna Yalavarthi, Md Rezaul Karim Nishat, and Shaikh Ahmed, “Atomistic

Simulation of Surface Passivated Wurtzite Nanowires: Electronic Bandstructure and Optical

Emission,” Adv. Nano Research, vol. 2, no. 3, pp. 157–172, 2014.

32. Vinay Chimalgi, Neerav Kharche, and Shaikh Ahmed, “Effects of Substrate Orientation on Opto-

Electronic Properties in Self-Assembled InAs/GaAs Quantum Dots,” Journal of Computational

Electronics, vol. 13, pp. 1026–1032, 2014.

33. Krishna Yalavarthi, Vinay Chimalgi and Shaikh Ahmed, “How Important is Nonlinear

Piezoelectricity in Wurtzite GaN/InN/GaN Disk-in-Nanowire LED Structures?” Optical and

Quantum Electronics, vol. 46, pp. 925–933, 2014.

34. Ky Merrill, Krishna Yalavarthi and Shaikh Ahmed, “Giant Growth-Plane Optical Anisotropy in c-

Plane Wurtzite GaN/InN/GaN Dot-in-Nanowires,” Superlattices and Microstructures, vol. 52, no. 5,

pp. 949–961, 2012.

35. Muhammad Usman, Yui-Hong Matthias Tan, Hoon Ryu, Shaikh S Ahmed, Hubert J Krenner,

Timothy B Boykin and Gerhard Klimeck, “Quantitative Excited State Spectroscopy of a Single

InGaAs Quantum Dot Molecule through Multi-Million Atom Electronic Structure Calculations,”

Nanotechnology, vol. 22, 315709, 2011.

36. Krishna Yalavarthi, Vamsi Gaddipati, and Shaikh Ahmed, “Internal Fields in InN/GaN Quantum

Dots: Geometry Dependence and Competing Effects on the Electronic Structure,” Physica E: Low-

Dimensional Systems and Nanostructures, vol. 43, pp. 1235–1239, 2011.

37. S. Ahmed, C. Ringhofer, D. Vasileska, “An Effective Potential Approach for Modeling 25 nm

MOSFET Devices,” Journal of Computational Electronics, vol. 9, no. 3, 197, 2010.

38. Shaikh Ahmed, Sharnali Islam, and Shareef Mohammed, “Electronic Structure of InN/GaN

Quantum Dots: Multimillion Atom Tight-Binding Simulations,” IEEE Trans. Electron Devices, vol.

57, no. 1, pp. 164–173, 2010.

39. S. Li, S. Ahmed, E. Darve, and G. Klimeck, “Compute the Diagonal of Sparse Matrix Inverse using

FIND Algorithm,” Journal of Computational Physics, vol. 227, pp. 9408–9427, 2008.

40. Himadri S. Pal, Kurtis D. Cantley, Shaikh S. Ahmed, and Mark S. Lundstrom, “Influence of

Bandstructure and Channel Structure on the Inversion Layer Capacitance of Silicon and GaAs

MOSFETs,” IEEE Trans. Electron Devices, vol. 55, no. 3, pp. 904–908, 2008.

41. D. Vasileska, H. Khan, and S. Ahmed, “Modeling Coulomb effects in nanoscale devices,” Journal of

Computational and Theoretical Nanoscience, vol. 5, no. 9, pp. 1793–1827, September 2008.

42. Neophytos Neophytou, Shaikh Ahmed, Gerhard Klimeck, “Influence of vacancies on metallic

nanotube transport performance,” Applied Physics Letter, vol. 90, 182119, 2007.

43. Gerhard Klimeck, Shaikh Ahmed, Hansang Bae, Neerav Kharche, Rajib Rahman, Steve Clark,

Benjamin Haley, Sunhee Lee, Maxim Naumov, Hoon Ryu, Faisal Saied, Marta Prada, Marek

Korkusinski, and Timothy B. Boykin, “Atomistic Simulation of Realistically Sized Nanodevices

Using NEMO 3-D—Part I: Models and Benchmarks,” IEEE Trans. Electron Devices, vol. 54, no. 9,

pp. 2079–89, 2007.

44. Gerhard Klimeck, Shaikh Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman,

Marta Prada, and Timothy Boykin, “Atomistic Simulation of Realistically Sized Nanodevices

Using NEMO 3-D—Part II: Applications,” IEEE Trans. Electron Devices, vol. 54, no. 9, pp. 2090–99,

2007.


45. Neophytos Neophytou, Shaikh Ahmed, Gerhard Klimeck, “Non-Equilibrium Green’s Function

(NEGF) Simulation of Metallic Carbon Nanotubes: The Effect of the Vacancy Defect,” Journal of

Computational Electronics, vol. 6, no. 1–3, pp. 317–320, September 2007.

46. C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska, “3D Monte-Carlo Device Simulations

Using an Effective Quantum Potential Including Electron-Electron Interactions,” Journal of


47. S. Li, S. Ahmed, and E. Darve, “Fast Inverse using Nested Dissection for NEGF,” Journal of


48. S. Ahmed, M. Usman, C. Heitzinger, R. Rahman, A. Schliwa, and G. Klimeck, “Symmetry

Breaking and Fine Structure Splitting in Zincblende Quantum Dots: Atomistic Simulations of

Long-Range Strain and Piezoelectric Field,” AIP Conference Proceedings, vol. 893, pp. 849–850, 2007.

49. Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard

Klimeck, “Strain and electronic structure interactions in realistically scaled quantum dot stacks,”

AIP Conference Proceedings, vol. 893, pp. 847–848, 2007.

50. Shaikh Ahmed, Gerhard Klimeck, Derrick Kearney, Michael McLennan, MP Anantram,

“Quantum Simulations of Dual Gate MOSFET Devices: Building and Deploying Community

Nanotechnology Software Tools on NanoHUB.org,” Int. Journal of High Speed Electronics, vol. 17,

no. 3, pp. 485–494, 2007.

51. AKM. Ahsan and S. Ahmed, “Impact of Halo Angle on 1/f noise in Conventional MOSFET

technology,” Solid State Electronics, vol. 50, pp.1705–1709, 2006.

52. Shaikh Ahmed, Christian Ringhofer, and Dragica Vasileska, “Parameter-Free Effective Potential

Method for Use in Particle-Based Device Simulations,” IEEE Trans. Nanotechnology, vol. 4, no. 4,

pp. 465–471, 2005.

53. D. Vasileska and S. Ahmed, “Narrow-Width SOI Devices: The Role of Quantum Mechanical Size

Quantization Effect and the Unintentional Doping on the Device Operation,” IEEE Trans. Electron

Devices, vol. 52, no. 2, pp. 227–236, 2005.

54. S. Ahmed, D. Vasileska and C. Ringhofer, “Quantum Potential Approach to Modeling Nanoscale

MOSFETs,” Journal of Computational Electronics, vol. 4, no. 1, pp. 57–61, 2005.

55. D. Vasileska, H. R. Khan and S. S. Ahmed, Christian Ringhofer, and Clemens Heitzinger

“Quantum and Coulomb Effects in Nanodevices,” International Journal of Nanoscience, vol. 4, No.

3, pp. 305–361, 2005.

56. J. Choi, S. Ahmed, T. Dimitrova, J. Chen, and D. K. Schroder, “The Role of the Mercury-Si

Schottky-Barrier Height in ψ-MOSFETs,” IEEE Trans. Electron Devices, vol. 51, no. 7, pp. 1164–1168,

2004.

57. K. Tarik, S. Ahmed, D. Vasileska and T.J. Thornton, “Subthreshold Mobility Extraction for SOI-

MESFETs,” Journal of Computational Electronics, vol. 3, pp. 243–246, 2004.

58. H. Khan, D. Vasileska, S. Ahmed, C. Heitzinger, and C. Ringhofer, “Modeling of FinFET: 3D MC

Simulation Using FMM and Unintentional Doping Effects on Device Operation,” Journal of

Computational Electronics, vol. 3, pp. 337–340, 2004.

59. S. Ahmed and Dragica Vasileska, “Modeling narrow-width SOI devices,” Semiconductor Science

and Technology, vol. 19, pp. 131–133, 2004.

60. Dragica Vasileska and Shaikh Ahmed, “Monte Carlo Simulation of Narrow-Width SOI Devices:

Incorporation of the Short-Range Coulomb Interaction,” Monte Carlo Methods and Applications, vol.

10, No. 3–4, pp. 629–640, 2004.


61. Shaikh S. Ahmed, Dragica Vasileska, “Modeling Narrow-Width SOI Devices: The Role of

Quantum Mechanical Narrow Channel Effects on Device Performance,” Lecture Notes in Computer

Science, vol. 2907, pp. 105–111, 2004.

62. M. Nedjalkov, S. Ahmed, and D. Vasileska, “A self-consistent event biasing scheme for statistical

enhancement,” Journal of Computational Electronics, vol. 3, pp. 305–309, 2004.

63. S. Ahmed, C. Ringhofer, and D. Vasileska, “Effective potential approach for modeling MOSFET

devices,” Journal of Computational Electronics, vol. 2, pp. 113–117, 2003.

64. S. Ahmed and D. Vasileska, “Threshold voltage shifts in narrow-width SOI devices due to

quantum mechanical size-quantization effects,” Physica E: Low-Dimensional Systems and

Nanostructures, vol. 19, pp. 48–52, 2003.

65. C. Ringhofer, S. Ahmed, and D. Vasileska, “Effective potential approach to modeling of 25 nm

MOSFET devices,” Superlattices and Microstructures, vol. 34, pp. 311–317, 2003.

66. D. Vasileska, R. Akis, I. Knezevic, S. N. Milicic, Shaikh S. Ahmed, and D. K. Ferry, “The role of

quantization effects in the operation of ultrasmall MOSFETs and SOI devices,” Microelectronic

Engineering, vol. 63, pp. 233–237, 2002.

67. D. Vasileska, I. Knezevic, R. Akis, S. Ahmed, and D. K. Ferry, “The Role of Quantum Effects on

the Operation of 50 nm MOSFETs, 250 nm FIBMOS Devices and Narrow-Width SOI Device

Structures,” Journal of Computational Electronics, vol. 1, pp. 453–457, 2002.

PEER-REVIEWED/REFEREED PROCEEDINGS ARCHIVED BY IEEE

68. Md Rezaul Karim Nishat, Archana Tankasala, Kharche Neerav, Rajib Rahman, and Shaikh

Ahmed, “Multiscale-Multiphysics Modeling of Nonpolar InGaN LEDs,” IEEE-NANO 2017, Proc.

of 17th IEEE Conference on Nanotechnology, pp. 85–88, 2017.

69. Khadija Khair and Shaikh Ahmed, “Effects of Uniaxial Strain on Polar Optical Phonon Scattering

and Electron Transport in Monolayer MoS2 FETs,” IEEE-NANO 2017, Proc. of 17th IEEE Conference

on Nanotechnology, pp. 246–249, 2017.

70. Abdulmuin M. Abdullah, Md Rezaul Karim Nishat, Shaikh Ahmed, “Atomistic Simulation of III-

Nitride Core-Shell QD Solar Cells,” IEEE-NANO 2017, Proc. of 17th IEEE Conference on

Nanotechnology, pp. 155–158, 2017.

71. Shaikh Ahmed, Mohammad Rashid, Saad Al-Qahtani, Md Rezaul Karim Nishat, Khadija Khair,

Ye Wu, Abdussamad Muntahi, Mayada Taher and Abdulmuin Abdullah, “Multiscale and

Multiphysics Modeling of Non-Classical Semiconductor Devices,” ICECE 2016, Proc. of 9th Int.

Conference on Electrical and Computer Engineering, Dhaka, Bangladesh, December 2016.

(DOI: 10.1109/ICECE.2016.7853846; http://ieeexplore.ieee.org/document/7853846/)

72. Jaime Bohorquez-Ballen, Hansika Sirikumara, Shaikh Ahmed, Thushari Jayasekera, “Lattice

vibrational properties of Si/Ge core-shell nanowires for thermoelectric applications,” IWCE 2015,

Proc. of 18th International Workshop on Computational Electronics 2015, West Lafayette, IN, USA, pp.

1-4, 2-4 Sept. 2015.

(DOI: 10.1109/IWCE.2015.7301984; http://ieeexplore.ieee.org/document/7301984/)

73. Md. R. Nishat, S. Alqahtani, Y. Wu, V. Chimalgi, and S. Ahmed, “GaN/InGaN/GaN Disk-in-Wire

Light Emitters: Polar vs. Nonpolar Orientations,” IWCE 2015, Proc. of 18th International Workshop on

Computational Electronics 2015, West Lafayette, IN, USA, pp. 1-2, 2-4 Sept. 2015.


74. K. A. Khair and S. S. Ahmed, “Dissipative Transport in Monolayer MoS2: Role of Remote

Coulomb Scattering,” IWCE 2015, Proc. of 18th International Workshop on Computational Electronics


2015, West Lafayette, IN, USA, pp. 1-2, 2-4 Sept. 2015.

(DOI: 10.1109/IWCE.2015.7301937; http://ieeexplore.ieee.org/document/7301937/

75. M. Rashid, S. Sundaresan, T. Jayasekera and S. Ahmed, “VFF-Monte Carlo framework for phonon

transport in nanostructures,” IWCE 2015, Proc. of 18th International Workshop on Computational

Electronics 2015, West Lafayette, IN, USA, pp. 1-2, 2-4 Sept. 2015.


76. Sasi Sundaresan, Krishna Yalavarthi, and Shaikh Ahmed, “Effects of atomicity and internal

polarization on the electronic and optical properties of GaN/AlN quantum dots: Multimillion-

atom coupled VFF MM- sp3d5s* tight-binding simulations,” IWCE 2012, Proc. of 15th International

Workshop on Computational Electronics 2012, University of Wisconsin, Madison, Print ISBN: 978-1-

4673-0705-5, May 15–22, 2012.


77. Krishna Yalavarthi, Sasi Sundaresan, and Shaikh Ahmed, “Multiscale Modeling of Wurtzite

InN/GaN Quantum Dot LEDs,” IEEE-NANO 2011, Proc. of 11th IEEE Conference on Nanotechnology,

pp. 881–886, 2011.

(DOI: 10.1109/NANO.2011.6144420; http://ieeexplore.ieee.org/document/6144420/)

78. Alejandra J. Magana, Dragica Vasileska, and Shaikh Ahmed, “A Transparency and Scaffolding

Framework for Computational Simulation Tools,” FIE 2011, Proc. of 41st IEEE/ASEE Frontiers in

Education Conference, Rapid City, SD, October 12–15, 2011.

(DOI: 10.1109/FIE.2011.6142803; http://ieeexplore.ieee.org/document/6142803/)

79. Sasi Sundaresan, Sharnali Islam, and Shaikh Ahmed, “Built-In Electric Fields in InAs/GaAs

Quantum Dots: Geometry Dependence and Effects on the Electronic Structure,” IEEE-NMDC

2010, Proc. of IEEE Nanotechnology Materials and Devices Conferences 2010, October 12–15, pp. 30–35,

California, USA, 2010.

(DOI: 10.1109/NMDC.2010.5652313; http://ieeexplore.ieee.org/document/5652313/)

80. Ramya Hindupur, Sharnali Islam, and Shaikh Ahmed, “Atomistic Modeling of Unintentional

Single Charge Effects in Silicon Nanowire FETs,” IEEE-NMDC 2010, Proc. of IEEE Nanotechnology

Materials and Devices Conferences 2010, pp. 282–285, California, USA, October 12–15, 2010.

(DOI:10.1109/NMDC.2010.5652451; http://ieeexplore.ieee.org/document/5652451/)

81. Muhammad Usman, Shaikh Ahmed, and Gerhard Klimeck, “A tight binding study of strain-

reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked

quantum dots,” IEEE-NANO 2008, Proc. of 8th IEEE Conference on Nanotechnology, pp. 541–544,

Arlington, TX, USA, 2008.

(DOI:10.1109/NANO.2008.161; http://ieeexplore.ieee.org/document/4617143/)

82. Kurtis D. Cantley, Yang Liu, Himadri S. Pal, Tony Low, Shaikh S. Ahmed, and Mark S.

Lundstrom, “Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET,” IEDM

2007, Technical Digest of IEEE Int. Electron Device Meeting IEDM, Washington, DC, pp. 113–116,

December 10–12, 2007.

(DOI:10.1109/IEDM.2007.4418877; http://ieeexplore.ieee.org/document/4418877/)

83. S. Ahmed, M. Usman, C. Heitzinger, R. Rahman, A. Schliwa, and G. Klimeck, “Atomistic

Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Pyramidal Quantum

Dots,” IEEE-NEMS 2007, Proc. of the 2nd IEEE International Conference on Nano/Micro Engineered and

Molecular Systems, pp. 937–942, January 16–19, 2007.

(DOI:10.1109/NEMS.2007.352172; http://ieeexplore.ieee.org/abstract/document/4160475/)


84. S. S. Ahmed, C. Ringhofer and D. Vasileska, “Efficacy of the thermalized effective potential

approach for modeling nanodevices,” SISPAD 2005, Proc. of the International Conference on

Simulation of Semiconductor Processes and Devices 2005, pp. 251–254, 2005.

(DOI:10.1109/SISPAD.2005.201520; http://ieeexplore.ieee.org/document/1562072/)

85. S. S. Ahmed, and D. Vasileska, “Modeling of Narrow-Width SOI Devices: The Impact of Quantum

Mechanical Size Quantization Effects and Unintentional Doping on Device Operation”, DRC 2004,

Technical Digest of the 62nd Device Research Conference, pp. 117–118, University of Notre Dame,

Indiana, USA, June 21–23, 2004.

(DOI:10.1109/DRC.2004.1367811; http://ieeexplore.ieee.org/document/1367811/)

86. D. Vasileska and S. Ahmed, “How Quantum Effects and Unintentional Doping Affect the

Threshold Voltage of Narrow-Width SO1 Devices,” IEEE-NANO 2004, Proc. of 4th IEEE Conference

on Nanotechnology, pp. 340–42, 2004.


87. S. Ahmed and D. Vasileska, “Narrow-Width SOI Devices: The Role of Quantum Mechanical

Space-Quantization Effects on Device Performance,” IEEE-NANO 2002, Proc. of 2002 IEEE

Conference on Nanotechnology, pp. 243–246, 2002.


OTHER CONFERENCE PROCEEDINGS

88. Krishna Yalavarthi, Vinay Chimalgi, Sasi Sundaresan and Shaikh Ahmed, “Modeling InGaN

Disk-in-Wire LEDs: Interplay of Quantum Atomicity and Structural Fields,” SISPAD 2012, Proc. of

the 2012 International Conference on Simulation of Semiconductor Processes and Devices, Denver,

Colorado, USA, pp. 221–224, September 5-7, 2012.

(http://in4.iue.tuwien.ac.at/pdfs/sispad2012/12-1.pdf)

89. Mumba, M. Zhu, J. Ma and S. Ahmed, “New Design and Implementation of a Virtual Classroom

System Using Google App Engine,” SITE 2012, Proc. of Society for Information Technology & Teacher

Education International Conference, P. Resta (Ed.), pp. 698-705, Chesapeake, VA: Association for the

Advancement of Computing in Education (AACE).

(https://www.learntechlib.org/p/39653)

90. Krishna Yalavarthi, Vamsi Gaddipati, and Shaikh Ahmed, “Atomistic Simulations of Electronic

Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots having Different Geometries,”

NSTI-Nanotech 2010, Proc. of the 2010 NSTI Nanotechnology Conference, vol. 2, pp. 37–40, California,

USA, June 21–24, 2010.

(http://www.nsti.org/publications/Nanotech/2010/pdf/1623.pdf; ISBN 978-1-4398-3402-2)

91. H. Khan, S. S. Ahmed and D. Vasileska, “Examination of the effects of unintentional doping on the

operation of FinFETs with Monte Carlo Simulation Integrated with fast multipole method,” NSTI-

Nanotech 2005, Proc. of the 2005 NSTI Nanotechnology Conference, vol. 3, pp. 41–44, Anaheim, CA,

USA, 2005.

(http://www.nsti.org/publications/Nanotech/2005/pdf/702.pdf)

92. S. Ahmed and D. Vasileska, “Threshold Voltage Shifts in Narrow-Width SOI Devices Due to

Quantum Mechanical Size-Quantization Effects,” NSTI-Nanotech 2003, Proc. of the Nanotechnology

Conference and Trade Show, vol. 2, pp. 222–225, Feb. 23–27, San Francisco, California, USA, 2003.

(http://www.nsti.org/publications/Nanotech/2003/pdf/T3404.pdf)

93. S. S. Ahmed, R. Akis and D. Vasileska, “Quantum Effects in SOI Devices,” NSTI-Nanotech 2002,

Proc. of 2002 International Conference on Modeling and Simulation of Microsystems, vol. 1, pp. 518–521,


San Juan, Puerto Rico, USA, April 22–25, 2002.

(http://nsti.org/publications/MSM/2002/pdf/186.pdf)

OTHER TECHNICAL WRITINGS

94. Dragica Vasileska, Katerina Raleeva, Stephen M. Goodnick, Christian Ringhofer, Shaikh S.

Ahmed, Nabil Ashraf, Arif Hossain, Raghuraj Hathwar, Ashwin Ashok, Balaji Padmanabhan,

“Monte Carlo Device Simulations,” In book: Monte Carlo Device Simulations, Chapter: Nanohub

Resources on Monte Carlo Device Simulations Study, Editors: Nanohub Research Professionals,

pp.1-76, October 2011. available at: http://www.nanohub.org/resources/10579/download.

95. S. Sundaresan, K. Yalavarthi, V. Gaddipati, M. Usman, and S. Ahmed, “Effects of internal fields in

self-assembled InN/GaN quantum dots: Multimillion-atom tight-binding simulations”, presented

at ORNL Technical Workshop on Scientific Discovery through Advanced Computing (SciDAC), July 11–

15, 2010, Chattanooga, Tennessee, USA.

96. C. Heitzinger, S. Ahmed, C. Ringhofer, and D. Vasileska, “Accurate Three-Dimensional

Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions”

available: https://math.la.asu.edu/~chris/ecs040831.pdf (accessed 04/16/2017)

97. C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska, “On the Efficient Simulation of Electron-

Electron Interactions in Nanoscale MOSFETs,” available: https://math.la.asu.edu/~chris/TNT-2004-

Heitzinger.pdf (accessed 04/16/2017)

98. Dragica Vasileska; Shaikh S. Ahmed; Gerhard Klimeck (2008), “Why QuaMC 2D and Particle-

Based Device Simulators?,” https://nanohub.org/resources/4520

99. Dragica Vasileska; Shaikh S. Ahmed; Gerhard Klimeck (2008), "Examples for QuaMC 2D particle-

based device Simulator Tool,” https://nanohub.org/resources/4543

100. Dragica Vasileska; Shaikh S. Ahmed; David K. Ferry (2008), "Modeling Coulomb Effects in

Nanoscale Devices,” https://nanohub.org/resources/4437

101. Dragica Vasileska; Shaikh S. Ahmed; Gerhard Klimeck (2008), "Particle-Based Device Simulators

Description,” https://nanohub.org/resources/4443

ARTICLES IN PREPARATION

102. “Effects of Structural Modification on the Reliability of Nanoscale Nitride HEMTs: A Multiscale

Numerical Study,”

103. “Modeling Quantum and Coulomb Effects in Nanoscale Tri-Gate III-V MOSFETs,”

104. “Growth-Plane Optical Anisotropy in c-Plane Wurtzite AlN/GaN/AlN Disk-in-Wires,”

105. “Role of variability on the optical emission characteristics of a InGaN QD molecule”

106. “Effects of Thermo-Mechanical Coupling on the Efficiency Degradation and Droop in Nanowire

InN/GaN LEDs”

107. “Numerical Characterization of Truncated Pyramidal Shaped InN/GaN Quantum Dots,”

108. “Interplay of Size-Quantization and Random Dopant Fluctuation Effects: Single-gate vs. Tri-gate

FETs,”

109. “Nanoscale Asymmetry Effects in Junctionless FETs,”

110. “On the Anomalous Variation of Bandgap in InGaN MQW Structures”

111. “Effects of uniaxial strain on fine-structure splitting in nonpolar InGaN devices”

D. PRESENTATIONS AT TECHNICAL CONFERENCES/WORKSHOPS/SEMINAR SERIES

(Several of these appearances resulted in conference proceedings, which are listed in the previous section)

http://www.nanohub.org/resources/10579/download

https://nanohub.org/resources/4520





1. Md Rezaul Karim Nishat, Archana Tankasala, Kharche Neerav, Rajib Rahman, and Shaikh

Ahmed, “Multiscale-Multiphysics Modeling of Nonpolar InGaN LEDs,” IEEE-NANO 2017.

2. Khadija Khair and Shaikh Ahmed, “Effects of Uniaxial Strain on Polar Optical Phonon Scattering

and Electron Transport in Monolayer MoS2 FETs,” IEEE-NANO 2017.

3. Abdulmuin M. Abdullah, Md Rezaul Karim Nishat, Shaikh Ahmed, “Atomistic Simulation of III-

Nitride Core-Shell QD Solar Cells,” IEEE-NANO 2017.

4. Shaikh Ahmed, “QuADS 3-D for Green Photonics,” STC Workshop, University of Michigan Ann

Arbor, May 22, 2017 (invited).

5. Shaikh Ahmed, Mohammad Rashid, Saad Al-Qahtani, Md Rezaul Karim Nishat, Khadija Khair,

Ye Wu, Abdussamad Muntahi, Mayada Taher and Abdulmuin Abdullah, “Multiscale and

Multiphysics Modeling of Non-Classical Semiconductor Devices,” ICECE 2016, 9th International

Conference on Electrical and Computer Engineering, Dhaka, Bangladesh, December 2016. (invited)

6. Shaikh Ahmed, “Multiscale Modeling of Quantum and Coulomb Effects in More-Moore Devices,”

Weekly Seminar Series, Nanoelectronic Materials Branch, Materials and Manufacturing

Directorate, Air Force Research Laboratory, Dayton, OH, USA, 21 July 2016.

7. Abdulmuin Abdullah, Saad Alqahtani, Md Rezaul Karim Nishat, Shaikh Ahmed, “Multiscale

modeling of nanostructured ZnO based devices for optoelectronic applications: Dynamically-

coupled structural fields, charge, and thermal transport processes,” APS March Meeting 2016,

Baltimore, MD, USA. (poster presentation)

8. Md. R. Nishat, S. Alqahtani, Ye Wu, V. Chimalgi, and S. Ahmed, “GaN/InGaN/GaN Disk-in-Wire

Light Emitters: Polar vs. Nonpolar Orientations,” 18th International Workshop on Computational

Electronics (IWCE), Purdue University, West Lafayette, Sep. 2-4, 2015 (oral presentation).

9. K. A. Khair and S. S. Ahmed, “Diffusive Transport in Monolayer MoS2: Role of Remote Coulomb

Scattering,” 18th International Workshop on Computational Electronics (IWCE), Purdue University,

West Lafayette, Sep. 2-4, 2015 (poster presentation).

10. S. Sundaresan, M. Rashid, T. Jayasekera and S. Ahmed, “VFF-Monte Carlo Framework for Phonon

Transport in Nanostructures,” 18th International Workshop on Computational Electronics (IWCE),

Purdue University, West Lafayette, Sep. 2-4, 2015 (poster presentation).

11. Jaime Bohorquez-Ballen, Hansika Sirikumara, Shaikh Ahmed, Thushari Jayasekera, “Phonon

Engineering of Si/Ge Core-Shell Nanowires for Thermoelectric Applications, “18th International

Workshop on Computational Electronics (IWCE), Purdue University, West Lafayette, Sep. 2-4, 2015

(poster presentation).

12. Shaikh Ahmed, “nanoHUB @ SIU: pedagogy and beyond,” 2nd nanoHUB User Conference 2015,

West Lafayette, Indiana, August 31- September 1, 2015 (Invited).

13. Shaikh Ahmed, “Nanoscale Device Discovery through Scientific Computing,” Engineering Science

Seminar Series, SIU, November 19, 2014.

14. Rezaul Nishat, Vinay Chimalgi, and Shaikh Ahmed, “Designing Nanostructured InGaN LEDs:

Interplay of Quantum Atomicity, Non-linear Polarization, and Crystal Directionality,”

International Conference on Superlattices, Nanostructures, and Nanodevices, ICSNN 2014, Savannah,

GA, USA, August, 2014. (oral presentation)

15. Vamsi M. Gaddipati and Shaikh S. Ahmed, “On the Reliability of Nanoscale Nitride HEMTs:

Multiscale Modeling of the Effects of Structural Modifications,” International Conference on

Superlattices, Nanostructures, and Nanodevices, ICSNN 2014, Savannah, GA, USA, August, 2014.

(poster presentation)

16. Sameer Al-Sibiani and Shaikh S. Ahmed, “Quantum-Corrected Monte Carlo Simulation of

Nanoscale Enhancement-Mode Tri-Gate III-V MOSFETs,” International Conference on Superlattices,


Nanostructures, and Nanodevices, ICSNN 2014, Savannah, GA, USA, August, 2014. (oral

presentation)

17. Abu Sadeque, Afsana Sharmin, Vamsi Gaddipati, and Shaikh Ahmed, “Multiscale Design of

Nanostructured Thermoelectric Coolers: Effects of Contact Resistances,” International Conference on

Thermoelectrics (ICT2014), Nashville, Tennessee, USA, July 6–10, 2014. (poster presentation)

18. Sasi Sundaresan, Abu Sadeque, Thushari Jayasekera, and Shaikh Ahmed, “Full-band phonon

transport in nanostructures: A coupled molecular mechanics-Monte Carlo (MM-MC) approach,”

International Conference on Thermoelectrics (ICT2014), Nashville, Tennessee, USA, July 6–10, 2014.

(oral presentation)

19. Jaime Bohorquez-Ballen, Masoud Babaeian, Micheal B. Ontl, Thushari Jayasekera, Sasi

Sundaresan, Shaikh Ahmed, “Phonon engineering of Si/Ge core-shell nanowires for

thermoelectric applications: Coherent model and beyond,” International Conference on

Thermoelectrics (ICT2014), Nashville, Tennessee, USA, July 6–10, 2014. (oral presentation)

20. Rezaul Nishat, Vinay Chimalgi, Krishna Yalavarthi, and Shaikh Ahmed, “Efficiency Droop in

Nanostructured III-N LEDs: Multiscale Numerical Characterization and Design Optimization,”

APS March Meeting 2014, Denver, Colorado, USA. (oral presentation)

21. Sasi Sundaresan, Thushari Jayasekera, and Shaikh Ahmed, “Full-Band Particle-Based Monte-Carlo

Simulation with Anharmonic Corrections for Phonon Transport in III-N Nanostructures,” APS

March Meeting 2014, Denver, Colorado, USA. (poster presentation)

22. Afsana Sharmin, Abu Sadeque, Vamsi Gaddipati, and Shaikh Ahmed, “Effects of Contact

Resistances in Determining the Efficiency of Nanostructured Thermoelectric Coolers,” APS March

Meeting 2014, Denver, Colorado, USA. (poster presentation)

23. Sameer Al-Sibiani, Khadija Khair, and Shaikh Ahmed, “Modeling Quantum and Coulomb Effects

in Nanoscale Enhancement-Mode Tri-Gate III-V MOSFETs,” APS March Meeting 2014, Denver,

Colorado, USA. (oral presentation)

24. Vinay Chimalgi and Shaikh Ahmed, “Atomistic Simulation of Electronic and Optical Properties of

(100), (110) and (111) Oriented InAs/GaAs Quantum Dots,” APS March Meeting 2014, Denver,

Colorado, USA. (poster presentation)

25. Abdussamad Muntahi, Sameer Al-Sibiani, and Shaikh Ahmed, “Nanoscale Effects in Junctionless

FETs,” APS March Meeting 2014, Denver, Colorado, USA. (poster presentation)

26. Shaikh Ahmed, “More-than-Moore: Device Discovery and Design through Scientific Computing,”

MTC Seminar Series, SIU, August 30, 2013.

27. Krishna Yalavarthi, Sasi Sundaresan, Vinay Chimalgi and Shaikh Ahmed, “Atomistic Modeling of

Electrical and Optical Characteristics of InGaN/GaN Disk-in-Wire LEDs,” SISPAD 2012,

September 5-7, 2012, Denver, CO, USA, 2012. (acceptance rate ~57%) (oral presentation)

28. Matthew Lane, Bradley Wrage, Shaikh Ahmed, Jun Qin, Tsuchin Chu, “Turbine Bearing-Seal

Project,” NSF IUCRC seminar, O’Fallon, IL, June 12, 2012. (oral presentation)

29. K. Khair, J. Ogden, and S. Ahmed, “Modeling Random Dopant Fluctuation Effects in Nanoscale

Tri-Gate MOSFETs,” 15th International Workshop on Computational Electronics (IWCE), University of

Wisconsin, Madison, May 22–15, 2012. (poster presentation)

30. S. Sundaresan, K. Yalavarthi, and S. Ahmed, “Competing Effects of Piezoelectric and Pyroelectric

Polarization in GaN/AlN Quantum Dots: Multimillion-Atom sp3d5s* Tight-Binding Simulations,”

15th International Workshop on Computational Electronics (IWCE), University of Wisconsin, Madison,

May 22–15, 2012. (oral presentation)

31. Matthew Lane, Bradley Wrage, Shaikh Ahmed, Jun Qin, Tsuchin Chu, “Turbine Bearing-Seal

Project,” NSF IUCRC seminar, Tempe, AZ, January 26, 2012. (oral presentation)


32. Mumba, M. Zhu, J. Ma and S. Ahmed, “New Design and Implementation of a Virtual Classroom

System Using Google App Engine,” SITE 2012 Society for Information Technology & Teacher

Education International Conference, Austin, Texas, USA; March 5-9, 2012.

33. Krishna Yalavarthi, Sasi Sundaresan, Ky Merrill, and Shaikh Ahmed, “Effects of Internal Fields on

the Optical Emission in Nanostructured III-N LEDs,” APS March Meeting 2012, Boston, MA. (oral

presentation)

34. Yashavanth Gowda, Sasi Sundaresan, Krishna Yalavarthi, and Shaikh Ahmed, “Engineering

Efficiency Droop in InGaN/GaN Multiple Quantum Well LEDs,” APS March Meeting 2012, Boston,

MA. (oral presentation)

35. Joshua Ogden, Abdussamad Muntahi, Krishna Yalavarthi, and Shaikh Ahmed, “Modeling

Random Dopant Fluctuation Effects in Nanoscale Tri-Gate MOSFETs,” APS March Meeting 2012,

Boston, MA. (poster presentation)

36. Vamsi Gaddipati, Sasi Sundaresan, Krishna Yalavarthi, and Shaikh Ahmed, “Atomistic Modeling

of Degradation Mechanisms in Nanoscale HEMT Devices,” APS March Meeting 2012, Boston, MA.

(poster presentation)

37. Krishna Yalavarthi, Sasi Sundaresan, and Shaikh Ahmed,” Multiscale Modeling of Wurtzite

InN/GaN Quantum Dot LEDs,” IEEE Conference on Nanotechnology IEEE NANO 2011, Aug 15–19,

2011, Portland, OR. (oral presentation)

38. Shaikh Ahmed, “Atomistic Modeling of Degradation Mechanisms in Nitirde HEMTs,” NSF

IUCRC seminar, June 2, 2011.

39. Alejandra J. Magana, Dragica Vasileska, and Shaikh Ahmed, “A Transparency and Scaffolding

Framework for Computational Simulation Tools,” 41st ASEE/IEEE Frontiers in Education Conference,

October 12–15, 2011, Rapid City, SD.

40. Shaikh Ahmed, “Nonclassical Nanoelectronics: Device Discovery and Design through Advanced

Scientific Computation,” Key note lecture at Engineering Week, Southeast Missouri State

University (SEMO), February 23, 2011.

41. Shaikh Ahmed, “Multimillion-Atom Modeling of Nanoscale Devices for Applications in Harsh

Environments,” Oak Ridge National Lab, TN, Feb 2011. (oral presentation)

42. S. Sundaresan, K. Yalavarthi, V. Gaddipati, M. Usman, and S. Ahmed, “Effects of internal fields in

self-assembled InN/GaN quantum dots: Multimillion-atom tight-binding simulations,” 2010

Scientific Discovery through Advanced Computing (SciDAC) Conference, July 11–15, 2010, The

Chattanoogan Hotel and Conference Center, Chattanooga, Tennessee, USA.

43. Krishna Yalavarthi, Vamsi Gaddipati, and Shaikh Ahmed, “Atomistic Simulations of Electronic

Structure in Realistically-Sized Wurtzite InN/GaN Quantum Dots having Different Geometries,”

2010 NSTI Nanotechnology Conference, Anaheim, California, June 21-24, 2010.

44. Shaikh Ahmed, “nanoHUB@SIUC”, key note speaker at the NCN Workshop on Simulation-based

Learning, Chicago, IL, November 2009.

45. Hoon Ryu, Muhammad Usman, Shaikh Ahmed and Gerhard Klimeck, “Atomistic tight binding

study of interband light transitions in self-assembled InAs/GaAs quantum dots,” MRS Fall

Meeting, Boston, Dec. 1–4, 2008.

46. Muhammad Usman, Shaikh Ahmed, and Gerhard Klimeck, “Atomistic tight binding study of

strain-reduced confinement potentials in identical and non-identical InAs/GaAs vertically stacked

quantum dots,” 8th IEEE Conference on Nanotechnology (NANO '08) Aug. 18–21 2008.

47. Muhammad Usman, Shaikh Ahmed, and Gerhard Klimeck, “Strain and Piezoelectric Effects on

the Electronic Structure of Coupled InxGa1-xAs/GaAs Self-Assembled Quantum Dots,” APS march

meeting 2008, New Orleans, LA, USA.


48. Shaikh Ahmed, “Quantum atomistic device simulations,” engineering seminar, SIUC, 2008.

49. Shaikh Ahmed, “Parameter variations in nanoscale devices,” NSF I/UCRC seminar, St. Luis,

December 2007.

50. Roksana Golizadeh-Mojarad, A.N.M. Zainuddin, Shaikh S. Ahmed, Gerhard Klimeck, Supriyo

Datta, “Atomistic NEGF Simulations of Carbon Nano-Ribbons in Magnetic Fields,” IWCE, Univ.

Massachusetts at Amherst, 2007.

51. Kurtis D. Cantley, Yang Liu, Himadri S. Pal, Tony Low, Shaikh S. Ahmed, and Mark S.

Lundstrom, “Performance Analysis of III-V Materials in a Double-Gate nano-MOSFET,” IEDM,

December 10–12, 2007, Hilton Washington, Washington, DC.

52. S. Ahmed, M. Usman, C. Heitzinger, R. Rahman, A. Schliwa, and G. Klimeck, “Atomistic

Simulation of Non-Degeneracy and Optical Polarization Anisotropy in Zincblende Quantum

Dots,” 2nd IEEE Conference on Nano/Micro Engineered Molecular Systems, Bangkok, Thailand, 2007.

53. Neophytos Neophytou, Shaikh Ahmed, Diego Kienle, Mark Lundstrom, Gerhard Klimeck,

“Building and Deploying Community Nanotechnology Software Tools on nanoHUB.org – Non-

Equilibrium Green's Function Simulations of the Impact of Atomic Defects on the Performance of

Carbon Nanotube Transistors”, 2006 APS March Meeting, March 13–17, 2006, Baltimore, MD, USA.

54. Gerhard Klimeck, Shaikh Ahmed, Marek Korkusiniski, Seungwon Lee, Faisal Saied, “Atomistic

Simulations of Long-Range Strain and Close-Range Electronic Structure in Self-Assembled

Quantum Dot Systems,” 2006 APS March Meeting, March 13–17, Baltimore, MD, USA.

55. Shaikh Ahmed, Dragica Vasileska, Gerhard Klimeck, Christian Ringhofer, “Efficacy of the

Thermalized Quantum Potential Approach for Modeling Nanoscale Semiconductor Devices,”

2006 APS March Meeting, March 13–17, Baltimore, MD, USA.

56. Shaikh Ahmed, M. P. Anantram, Neophytos Neophytou, Marek Korkusinski, Gerhard Klimeck,

“Quantum Simulations of Electronic Structure and Transport Properties in Conventional and

Novel Nanoscale Devices,” 7th World Congress on Computational Mechanics, Los Angeles 2006.

57. Neophytos Neophytou, Shaikh Ahmed, M.P. Anantram, and Gerhard Klimeck, "Non-Equilibrium

Green's Function (NEGF) Simulation of Metallic Carbon Nanotube Transistors: Impact of Vacancy

Defect,” 11th International Workshop on Computational Electronics (IWCE 11), Vienna, Austria, 2006.

58. Shaikh Ahmed, Muhammad Usman, Clemens Heitzinger, Rajib Rahman, Andrei Schliwa, and

Gerhard Klimeck “Symmetry breaking and fine structure splitting in self-assembled zincblende

quantum dots: atomistic simulations of long-range strain and piezoelectric field,” 28th International

Conference on the Physics of Semiconductors, ICPS, Vienna, Austria, July 24–28, 2006.

59. Muhammad Usman, Shaikh Ahmed, Marek Korkusinski, Clemens Heitzinger, and Gerhard

Klimeck, "Strain and electronic structure interactions in realistically scaled quantum dot stacks,”

28th International Conference on the Physics of Semiconductors, ICPS, Vienna, Austria, July 24–28 2006.

60. Gerhard Klimeck, Rick Kennel, Michael McLennan, Stephen Clark, Clemens Heitzinger, Shaikh S.

Ahmed, Wei Qiao, David Ebert, Sebastien Goasguen, Krishna Madhavan, “nanoHUB.org – A fully

operational Science Gateway for the nano Science Community,” 2nd IEEE/ACM International

Workshop on High Performance Computing for Nano-science and Technology (HPCNano06), Nov. 13,

2006, Tampa, Florida, USA.

61. Michael McLennan, Sebastien Goasguen, Krishna Madhavan, Derrick Kearney, Joe Cychosz,

Alicia Goodman, Shaikh Ahmed, Swaroop Shivarajapura, Shawn Rice, Carol Song, Steve Clark,

Rick Kennel, Clemens Heitzinger, Mark Lundstrom, Gerhard Klimeck, “The nanoHUB—Online

simulations and a community for nano-science and nano-technology,” Teragrid 2006, Indianapolis,

IN June 12–15, 2006.


62. Gerhard Klimeck, Shaikh Ahmed, Clemens Heitzinger, Neerav Kharche, Muhammad Usman,

Mathieu Luisier, Raesong Kim, Neophytos Neophytou, Michael McLennan, and Timothy Boykin,

“Quantum Dot, Nanowire, and Bandstructure Modeling, and Deployment on Nanohub.Org,” Int.

Workshop Tera- and Nano- Devices: Physics and Modeling, October 16–19, 2006, Aizu, Japan.

63. C. Heitzinger, C. Ringhofer, S. S. Ahmed and D. Vasileska, “3D Monte Carlo device simulations

using an effective quantum potential including electron-electron interactions,” 11th International

Workshop on Computational Electronics, IWCE, May 2006, Vienna, Austria.

64. Shaikh S. Ahmed, “Building and Deploying Community Nanotechnology Software Tools on

nanoHUB.org,” presentation at FreeScale vist at Purdue University, November 2005.

65. Shaikh S. Ahmed, Marek Korkusinski, Faisal Saied, Haiying Xu, Seungwon Lee, Mohamed

Sayeed, Sebastien Goasguen and Gerhard Klimeck, “Large Scale Simulation in Nanostructures

with NEMO3-D on Linux Clusters,” 6th LCI International Conference on Linux Clusters: The HPC

Revolution 2005, April 26–28, 2005, University of North Carolina, Chapel Hill, NC, USA. (presented

on behalf of Marek Korkusinski)

66. S. S. Ahmed, C. Ringhofer and D. Vasileska, “Efficacy of the thermalized effective potential

approach for modeling nanodevices,” SISPAD 2005, Komaba Eminence, Tokyo, Japan, Sept. 1-3, 2005.

67. Shaikh Ahmed, Gerhard Klimeck, Sebastien Goasguen, Faisal Saied, Marek Korkusinksi, Haiying

Xu, and Seungwon Lee, “Building and Deploying Community Nanotechnology Software Tools on

nanoHUB.org – Atomistic Simulations of Multimillion-Atom Quantum Dot Nanostructures,” I-

light Symposium 2005, Indiana University, September 2005.

68. Dragica Vasileska, Shaikh Ahmed, Christian Ringhofer, “Quantum Effects Incorporation into

Monte Carlo Device Simulators for Modeling Nano-Scale Devices,” 2nd Annual Conference on

Foundations of Nanoscience: Self-Assembled Architectures and Devices (Fnano05), Snowbird Cliff

Lodge, Snowbird, UT, April 24 –28, 2005.

69. Khan, S.S. Ahmed, D. Vasileska, “Examination of the Effects of Unintentional Doping on the

Operation of FinFETs with Monte Carlo Simulation Integrated with Fast Multipole Method

(FMM),” 2005 NSTI Nanotech Conference & Trade Show, Anaheim, May 8–12, 2005.

70. C. Heitzinger, S. Ahmed, C. Ringhofer, and D. Vasileska, “Efficient Simulation of the Full

Coulomb Interaction in Three Dimensions,” 9th International Workshop on Computational Electronics

(IWCE 10), Purdue University, 2004.

71. C. Heitzinger, S. Ahmed, C. Ringhofer, and D. Vasileska, “Accurate Three-Dimensional

Simulation of Electron Mobility Including Electron-Electron and Electron-Dopant Interactions,”

206th Meeting of the Electrochem. Soc. ECS, October 2004, Honolulu, HI, USA.

72. D. Vasileska and S. Ahmed, “Coulomb Effects on Nanoscale MOSFET Operation,” 4th IEEE

Conference on Nanotechnology, August 17–19, 2004, Munich, Germany.

73. S. S. Ahmed, and D. Vasileska, “Modeling of Narrow-Width SOI Devices: The Impact of Quantum

Mechanical Size Quantization Effects and Unintentional Doping on Device Operation,” 62nd Device

Research Conference DRC, University of Notre Dame, Indiana, USA, June 21–23, 2004.

74. C. Heitzinger, C. Ringhofer, S. Ahmed, and D. Vasileska, “On the Efficient Simulation of Electron-

Electron Interactions in Nanoscale MOSFETs,” Trends in Nanotechnology, TNT September 13–17,

2004, Segovia, Spain.

75. T. Khan, S. Ahmed, T. Thornton, D. Vasileska, “Subthreshold mobility modeling of SOI

MESFETs,” 10th International Workshop on Computational Electronics IWCE 2004, Purdue University,

West Lafayette, USA, October 2004.


76. S. Ahmed and D. Vasileska, “Threshold voltage shifts in narrow-width SOI devices due to

quantum mechanical size-quantization effects,” Nanotechnology Conference and Trade Show, San

Fransisco, California, USA, Feb. 23–27, 2003.

77. S. Ahmed and D. Vasileska, “Modeling of narrow-width SOI devices: The role of quantum

mechanical narrow channel effects on device performance,” 4th International Conference on Large-

Scale Scientific Computations, June 4-8, 2003, Sozopol, Bulgaria.

78. S. Ahmed, C. Ringhofer, and D. Vasileska, “Quantum potential for use in particle based

simulations,” 9th Int. Workshop on Computational Electronics (IWCE 9), 25–28 May 2003, Italy.

79. C. Ringhofer, D. Vasileska, S. Ahmed, “A thermodynamic quantum potential approach,” Workshop

on Quantum and Many-Body Effects in Nanoscale Devices, Arizona State University, Tempe, Arizona,

October 24–25, 2003.

80. S. Ahmed and D. Vasileska, “Modeling of narrow-width SOI devices,” 13th International Conference

on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-13), July 28–August 01, 2003, Italy.

81. S. Ahmed and D. Vasileska, “The Influence of Unintentional Doping on nanoscale MOSFET

Operation,” 4th IMACS Seminar on Monte Carlo Methods, 15–19 Sep. 2003, Berlin, Germany.

82. S. Ahmed and D. Vasileska, “Quantum effects in narrow-width SOI devices,” 14th Workshop on

Modeling and Simulation of Electron Devices, 16-17 October, Barcelona, Spain, 2003.

83. S. S. Ahmed, and D. Vasileska, “Quantum mechanical narrow-channel effect in SOI devices,” 4th

Int. Symposium on Nanostructures and Mesoscopic Systems (NanoMes), Tempe Mission Palms Hotel,

Tempe, Arizona, USA, February 17–21, 2003.

84. S. Ahmed, C. Ringhofer, and D. Vasileska, “Effective potential approach to modeling of 25 nm

MOSFET devices,” 6th International Conference on New Phenomena in Mesoscopic Systems (NPMS-6)

and Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices (SIMD-4), Maui,

Hawaii, USA, December 1–5, 2003.

85. S. S. Ahmed, and D. Vasileska, “Narrow-Width SOI Devices: The role of Quantum Mechanical

Space-Quantization Effects on Device Performance,” 2nd IEEE Conference on Nanotechnology,

Arlington, VA, USA, August 26–28, 2002.

86. S. S. Ahmed, R. Akis and D. Vasileska, “Modeling of Narrow-Width SOI devices,” 2002 IEEE Si

Nanoelectronics Workshop, Honolulu, Hawaii, USA, June 9–10, 2002.

87. S. S. Ahmed, R. Akis and D. Vasileska, “Quantum Effects in SOI Devices: A Scattering matrix

calculation based on Landauer’s formalism,” 4th International Conference on Modeling and Simulation

of Microsystems, San Juan, Puerto Rico, USA, April 22–25, 2002.

VI. TEACHING ACTIVITIES AND EXPERIENCE

A. AREAS AND INTERESTS

1. Quantum processes and phenomena in nanostructures

2. Conventional and non-conventional semiconductor devices

3. Devices for energy applications (solid-state lighting, solar cells, and thermoelectrics)

4. Computational nanoelectronics

5. Analog technology/design and inexact computing

B. TEACHING PHILOSOPHY

The mediocre teacher tells...


The good teacher explains...

The superior teacher demonstrates...

The Great Teacher Inspires!

-William Arthur Ward

1. Stimulate critical thinking so that the students can value and nurture their own intellectual

curiosity, which will subsequently act as the foundation for their problem solving attitudes and

skills.

2. Promote an active learning environment. Emphasize conceptual and issue-based learning

approaches.

3. Follow a bottom-up approach (atoms-to-transistors) that brings a new perspective to engineering

education in materials, devices, and systems to complement traditional top-down understanding.

Students are expected to utilize their conceptual understanding of the nanoscale processes in the

design, modeling, and optimization of devices and systems.

4. Include webinars (as supplementary materials or homework assignment) to broaden students’

perspectives and provide an opportunity to get acquainted with on-going research activities in

major institutions and interact with the community.

5. Class projects recognize the current magnitude of commercial science and engineering, and,

rather than being hypothesis-driven, focus on end-results/products. Completion of the entire

project and documentation is emphasized.

6. Motivate the students to work effectively in groups, emphasize ethical values and professional

attitudes, and develop awareness for the need for lifelong learning.

C. COURSES TAUGHT AT SIU

I have taught 4 different undergraduate and 4 different graduate level regular courses at SIU. A

detailed list of all the courses that I have taught at SIU since fall 2007 is as follows.

FA2017 – ECE 550 (Nanoscale VLSI Devices), ECE 345 (Electronics), ECE 600 (Doctoral dissertation)

SP2017 – ECE 547/447 (Semiconductor Devices), ECE 345 (Electronics), ECE 600 (Doctoral dissertation)

FA2016 – ECE 560 (Semiconductor Characterization), ECE 345 (Electronics), ECE 600 (Doctoral

dissertation)

SP2016 – ECE 447 (Semiconductor Devices), ECE 557 (Computational Electronics I), ECE 345

(Electronics), ECE 600 (Doctoral dissertation)

FA2015 – ECE 449/560 (Technology of ICs), ECE 550 (Nanoelectronic devices), ECE 600 (Doctoral

dissertation)

SP2015 – Sabbatical

FA2014 – ECE 449/560 (Technology of ICs), ECE 545 (Advanced Semiconductor Devices), ECE 592

(Independent Study), ECE 600 (Doctoral dissertation)

SP2014 – ECE 447 (Electronic Devices), ECE 550 (Nanoelectronic devices), ECE 599 (Thesis), ECE 600

(Doctoral dissertation)

FA2013 – ECE 593 (Special Topic in ECE), ECE 550 (Nanoelectronic devices), ECE 592 (Independent

Study), ECE 599 (Thesis), ECE 600 (Doctoral dissertation)

SP2013 – ECE 447 (Electronic Devices), ECE 557 (Computational Electronic I), ECE 599 (Thesis), ECE

600 (Doctoral dissertation)

FA2012 – ECE 446 (Electronic circuit design), ECE 550 (Nanoelectronic devices), ECE 599 (Thesis), ECE




(Doctoral dissertation), ECE 580 (Seminar Series)




(Doctoral dissertation)



SP2010 – ECE 447 (Electronic Devices), ECE 593 (Computational Nanoelectronics I)



SP2009 – ECE 345 (Microelectronics), ECE 550 (Nanoelectronic devices), ECE 592 (special

investigation), ECE 599 (Thesis)

FA2008 – ECE 345 (Microelectronics), ECE 550 (Nanoelectronic devices), ECE 592 (special

investigation)

SP2008 – ECE 593 (advanced topics in ECE), ECE 592 (special investigation)

FA2007 – ECE 593 (advanced topics in ECE), ECE 592 (special investigation)

D. NEW COURSE DEVELOPMENT

I have developed one new undergraduate and five new graduate level courses at SIU.

(1) ECE 449/560 VLSI Material and Device Characterization: Materials for modern VLSI:

semiconductor crystals, tubular and monolayer materials, organic materials, heterostructures, wafers

and notations. Nanoscale fabrication processes: IC production flow, selective doping, nanolithography,

etching, contacts and interconnects, spontaneous formation and ordering of nanostructures, fabrication

of MEMS/NEMS systems, IC assembly and packaging. VLSI device characterization: electrical CV and

IV profiling, defect characterization using DLTS, carrier mobility and lifetime measurements, optical

microscopy and spectroscopy, particle beam and X-ray techniques. Reliability of devices and ICs:

harsh environments, hot carriers, NBTI, electromigration, electrostatic discharge, IC power dissipation

and cooling. Prerequisite: ECE 447 or ECE 423 or PHY 425 or instructor consent.

(2) ECE 557 Computational Nanoelectronics: Computers and computing. High-performance clusters

or supercomputers and essential software tools. Essential numerical methods. Fundamentals of charge

transport in semiconductor devices. Modeling electrostatics. Solving continuity equations. Electronic

bandstructure calculations. Modeling scattering processes and carrier mobility. Phonon transport and

thermoelectrics. Fundamentals of optical processes. Commercial and non-commercial semiconductor

device modeling tools.

(3) ECE 545 Advanced Semiconductor Devices: Technology Drivers: Moore, More Moore, and More-

than-Moore; Case Study I: Integrated Bio Sensors; Energy Related Devices: Optical Properties of

semiconductors; Solid-State Lighting, Singe Photon Emitters, OLEDs, Solar Cells, Thermoelectrics,

Piezoelectrics, Pyroelectrics, Energy storage: Supercapacitors, Sensors and Detectors, Imagers and

LCDs, Thin-Film Transistors (TFTs), Microwave and THz Devices, Metamaterials, Memory Devices

and Nano-Circuits.

(4) ECE 550 Nanoelectronic Devices: Review of fundamental principles of semiconductor devices.

NanoTransistors: Charge-based devices—MOSFETs, non-ideal and quantum effects in nanoscale

MOSFETs, advanced MOSFETs: trigate FETs, FinFETs, ETSOI, SiGe, Ge and III-Vs, carbon nanotubes

and graphene ribbons, 2-D monolayers, nanowires, high electron mobility transistors (HEMTs),


compact and SPICE models for MOS devices. VLSI interconnects, parasitic elements, and reliability

issues. Non-charge based devices—spinFET. Quantum devices—resonant tunnel diodes, tunnel FETs,

single electron transistors (SETs). NanoMemory: EEPROM and Flash, phase change memory,

electrolyte, magnetic and ferroelectric RAM, spin-torque devices, DRAM and ZRAM. Prerequisite:

ECE 447 or ECE 423 or ECE 446 or PHY 425 or PHY 430 or instructor consent. Project-based fee: $25 to

help defray cost of software licenses.

(5) ECE 548 Quantum Phenomena and Devices: Introduction: Classical Phenomena and Devices. Why

Quantum Devices? Current Picture: Academia and Industry. Essential Statistical Mechanics. Essential

Quantum Mechanics. Quantum Theory of Electrons: Quantization, Tunneling, Quantum Interference,

Quantum Hall Effect, Scattering and Broadening, Dephasing and Shot Noise. Coulomb Blockade.

Quantum Optics. Collective Phenomena and Spin. Relativistic Quantum Phenomena. Quantum Phase

Transition. Quantum Computation. Prerequisite: ECE 447 or ECE 423 or ECE 446 or PHY 425 or PHY

430 or instructor consent.

E. COURSES-IN-PROGRESS AT SIU

(1) Introduction to Nanoelectronics (for seniors / beginning graduate students): Grand challenges in

the 21st century and the promise of nanotechnology. Promising areas of nanotechnology – smart

functional materials, electronics, optics, sensors, energy conversion, biological structures, and

environment. Basic physical processes governing the operation of nanoscale devices. General

approaches of nanoscale device fabrication, measurement and characterization. Various figures of

merit widely used for efficient device and system design. Higher order effects that impact today’s and

future nanoscale devices. Business applications, career development opportunities, and

nanotechnology and the society.

(3) Properties of Engineering Materials (for junior undergraduate students)

(4) Terahertz Devices and Circuits (for senior undergraduate / beginning graduate students)

F. CURRENT GRADUATE FACULTY STATUS

Graduate Faculty at SIU

G. STUDENTS TRAINED AND GRADUATED FROM MY RESEARCH GROUP

1. Abdussamad Muntahi (PhD, now at KLA-Tencor): Nanoscale Effects in Junctionless Field Effect

Transistors (May 2018)

2. Abdullah Abdulmuin (PhD, Now: Umm Al-Qura University, Saudi Arabia): Multiscale Modeling

of III-Nitride Core-Shell Solar Cells, May 2017.

3. Sameer Al-Sibiani (PhD, Now: Assistant Professor, Yanbu Industrial College, Saudi Arabia):

Modeling Quantum and Coulomb Effects in Nanoscale Enhancement-Mode Tri-Gate III-V

MOSFETs, May 2015.

4. Vamsi Gaddipati (PhD, interviewed by Intel): Effects of Structural Modification on Reliability of

Nanoscale Nitride HEMTs, December 2014.

5. Sasi Sundaresan (PhD, now at Qualcomm): Atomistic modeling of phonon bandstructure and

transport for optimal thermal management in nanoscale devices, May 2014.

6. Vinay Chimalgi (PhD, now at Qualcomm): Crystal structure engineering for improved

performance of emerging nanoscale devices, May 2014.

7. Krishna Yalavarthi (PhD, now at Qualcomm): Interplay of electrical, mechanical and thermal

fields in III-N nanostructures for LED applications, July 2013.


8. Afsana Sharmin (MS, now at U Arkansas): Designing a nano-enabled embedded thermoelectric

cooler, November 2013.

9. Ky Merrill (MS, now at ASU): Optical anisotropy in GaN/InN/GaN dot-in-wires, July 2012.

10. Yashvanth Puttaswamy (MS, now at Global Systems): Degradation of solid-state lighting devices,

May 2012.

11. Joshua Ogden (MS, now at Lockheed Martin): Modeling random dopant fluctuation effects in

nanoscale trigate MOSFETs, December 2011.

12. Dylan John (MS, now at Samsung): Atomistic modeling of AlN/GaN HEMTs for applications in

harsh environments, May 2011.

13. Muhammad Rahman (MS, now at ComCast): A Web Portal System for Accessing Maxwell

Supercomputer at SIUC (primary GA project supervisor, graduated from CS), May 2011.

14. Sasi Sundaresan (MS, now at Qualcomm): Modeling internal fields in InAs/GaAs quantum dots,

May 2010.

15. Ramya Hindupur (MS, now at Intel): Floating body memory devices, December 2010.

16. Sharnali Islam (MS, did PhD at UIUC, Now at Intel): Atomistic modeling of unintentional single

charge effects in nanoscale FETs, May 2010.

17. Shareef uddin Mohammad (MS, Richard. Texas): Modeling Nitride based Quantum Dots:

Multimillion Atom Tight-Binding Simulations, 12/2009.

H. CURRENT RESEARCH ASSISTANTS IN MY GROUP AT SIUC

1. Khadija Abul Khair (PhD): Carrier transport in 2-D materials (expected 12/2018)

2. Md. Rezaul Karim Nishat (PhD): Design of a single photon emitter for quantum computation

3. Saad Mubarak Al-Kahtani (PhD): Reliability of integrated circuits and devices

4. Mayada Taher (PhD): Design of terahertz quantum cascade lasers

5. Ye Wu (PhD): Reliability of HEMTs

6. Mohammad Z. Rashid (PhD): Nanoscale devices for energy harvesting applications

7. Zichang Zhang (PhD, co-advisor): Tentative topic: High-field transport in Ga2O3 HEMTs

8. Subhadeep Chowdhury: Non-conventional computing devices (tentative)

I. OTHER PH.D. AND MASTERS COMMITTEES SERVED/SERVING

Served (Students have already Graduated)

1. Steven Smith (MS, 5/2018)

2. Raghava Katreepalli (PhD, 12/2017)

3. Ishraq Ahmed (PhD, Department of Economics SIU, 4/2017)

4. Hossein Sarafraz Yazdi (PhD, 11/2016)

5. Yueran Gao (PhD, 4/2016)

6. Chenglong Zhang (PhD, 11/2014)

7. Shiyu Xu (PhD, 10/2014)

8. Jaime Bohorquez-Ballen (PhD, Physics, 4/2014)

9. Arif Hossain (PhD, 5/2011) Arizona State University

10. Muutaz Al-Tarawneh (PhD, 12/01/2010)

11. Veera Raghavendra Sai Mallik Kandala (PhD, 8/2012)

12. Kedar Karmarkar (PhD, 8/2013)


13. Nima Daoudjadeh (PhD, 6/2014)

14. Ahmad Albanna (PhD, 12/2010)

15. Hossein Sarafraz Yazdi (MS, 12/2012)

16. Linlin Cong (MS, 8/1/2012)

17. Venkata Naresh Mudhireddy (MS, 12/1/2010)

18. Adam Watkins (MS, 5/2012)

19. Leanna Smith (MS, 5/2012)

20. Kedar Karmarkar (MS)

21. Jayawant S. Kakade (PhD, 1/2008)

Currently Serving

22. Kiriti Nagesh Gowda (PhD)

J. REU STUDENTS

1. Rachel Bolerjack (SIU): TEC characterization and modeling (2/2017 – 6/2017)

2. Ryan Guss (SIU): TEC characterization and modeling (9/2016 – 6/2017)

3. Mahir Morshed (UIUC): NanoPrinting of TECs, summer 2016

4. Allison Campbell (SIU): Software design of a TEC unit, 2014–15

5. Steven Blair (SIU): 3-D printing and characterization of a thermoelectric cooler, 2014-15

6. Joseph Richards (Illinois Wesleyan University): Piezoelectric energy harvesting module

development, summer 2014

7. Chance Baker (SIU): Thermal mapping of integrated circuits using the HotSpot toolkit, 2013

8. Katina Mattingly (Murray State): Nanoscale solid-state lighting device simulator (nanoSSL) for

nanoHUB.org, summer 2012

K. K-12 OUTREACH ACTIVITIES AT SIU

(1) At SIUC, my group, in collaboration with colleagues in the C&I and CS departments, has

spearheaded “Partnership for Improved Achievement in Science through Computational Science

(PIASCS)”, an ISBE funded initiative to train (through summer teacher development workshops and

follow up sessions) K-12 teachers in computer simulations and visualization tools to develop reasoning

about abstract scientific concepts and phenomena, access cutting-edge scientific research, and engage

in authentic practices of science. The project also aims at increasing middle and high school teachers’

science content and pedagogical knowledge. For the last two years, we have trained around 50

teachers and the workshops were held during July 19–30, 2010, and July 18–29, 2011. As part of their

summer course for Master's degree program in math and science education, they received a tutorial

demonstration on supercomputing and Shaikh Ahmed gave lectures on how large scientific

computation (such as using ORNL’s Jaguar platform) play a critical role in exploiting the degrees of

freedom available at nanoscale and help designing next-generation efficient electronic and

optoelectronic devices.

(2) STEM: A group of 26 STEM teachers received a tutorial demonstration on supercomputing and

scientific computing on June the 8th, 2012.

(3) Have participated at the SIU Research Town Hall Meeting during 2010-2013 sessions. Group came 1st

in the Physical Sciences category in 2012.

(4) Supervised two Carbondale Junior High School students in building electronic circuits and high-

performance computing during summer semester of 2009 and 2013.


(5) Participated in the student leadership council (SLC) via the NCN platform at Purdue University.

L. SUPERVISING SURI UNDERGRAD STUDENTS

(1) As part of my responsibilities at Purdue during 2005–07, I supervised three undergraduate and two

graduate students to develop the graphical user interface (GUI) for easy use of commercial and non-

commercial simulation tools by non-experts. Listed below are the tools developed along with the name

of students under my guidance: Akira Matsudaira—MOSCap and FETtoy; Matteo Mannino–MOSFET,

Schred; Xufeng Wang—nanoMOS; Himadri Pal—Schred; Neophytos Neophytou—CNTFET.

(2) At Tempe, Arizona, through ASU’s WISE programs, I have worked for both middle-school and

high-school students in creating Electrical Engineering Labs, to involve minorities, women, in the

electrical engineering discipline.

M. ONLINE (FOR COMMUNITY USE) TEACHING MODULES

Apart from the simulation software/tools that I have developed for nanoHUB, I have also authored 4

on-line tutorials:

(1) 2 May 2008: Why QuaMC 2D and Particle-Based Device Simulators?

(2) 10 May 2008: Examples for QuaMC 2D particle-based device Simulator Tool.

(3) 26 April 2008: Modeling Coulomb Effects in Nanoscale Devices.

(4) 28 April 2008: Particle-Based Device Simulators Description.

The educational resources I have authored/co-authored and made freely available on nanoHUB have,

as of September 20, 2014, served over 3,800 users in 290 courses in 38 institutions (See

https://nanohub.org/members/9293/usage).

VII. UNIVERSITY EXPERIENCE

A. COLLEGE AND UNIVERSITY COMMITTEES AND COUNCILS

SIU Willis Swartz Scholarship Award, Committee Chair, 2017-

SIU Faculty Senate, Senator, 2014-2017

SIU University-Level Early Career Faculty Excellence Award Committee, 2017, 2018

SIU FS Faculty Welfare and Status Committee, co-Chair, 2016-17

SIU Graduate Enrollment Task Force, 2015-16

SIU Provost Task Force for Design across Curriculum, 2013

SIU Materials Technology Center (MTC) Advisory Council, 2013-

SIU Doctoral Fellowship Committee, 2010-12, 2015-17

SIU Morris Fellowship Committee, 2010-12

SIU College of Engineering PhD in Engineering Science Committee, 2015-

SIU Engineering Associate Dean Search Committee, 2010

SIU Engineering ad hoc Committee for Grand Challenge Scholars Program, 2010

SIU Research Computing and Cyberinfrastructure Advisory Committee

SIU Office of Sponsored Research Web Development Committee, 2011-12

B. DEPARTMENT COMMITTEES

ECE Department Graduate Affairs Committee, 2013-

https://nanohub.org/members/9293/usage


ECE HKN (eta kappa nu) Honor Society, 2010

ECE Search Committee for TT faculty 2012, 2013, 2014, 2015, 2016, 2017

ECE Course Committee for ECE345, ECE446, and ECE447

ECE Search Committee for ECE Lab Supervisor 2008

C. OTHER

SIUC Research Town Meeting ECE Organizer, 2010

Advisor of 3D Design and Replication RSO, 2014

Advisor of Saluki Makerspace RSO, 2014-

Advisor of Bangladesh Student Association RSO, 2013-2015

Illinois Science Fair Judge 2009, 2010, 2011, 2012, 2013

Judge Student Paper Symposium (SPS), 2009

Usher for the Commencement Ceremony, summer 2008, 2009

VIII. PROFESSIONAL SERVICE

A. MEMBERSHIP IN PROFESSIONAL ASSOCIATIONS

Senior Member of IEEE 2013-

Member of IEEE Electron Device Society

Member of IEEE Nanotechnology Council

Member of American Physical Society 2005-

B. GRANT EVALUATION

USA National Science Foundation (NSF) ERC Site Visit Team 2012, 2013, 2014, 2015, 2016, 2017

USA National Science Foundation (NSF) Panel Reviewer 2011, 2012, 2013, 2014, 2016, 2017

USA National Science Foundation (NSF) ad hoc Reviewer

2015-16 Louisiana Board of Regents (BoRSF) Engineering Panel

Swiss National Supercomputing Centre (CSCS) Scientific Project Reviewer 2011

C. EXTERNAL TENURE/PROMOTION EVALUATOR

Purdue University, West Lafayette, 2016

University of Texas Pan American, September 2011

D. SUMMER WORKSHOP ORGANIZING

Illinois Mathematics and Science Partnership WIP II Workshop, July 18–29, 2011

Illinois Mathematics and Science Partnership WIP II Workshop, July 19–30, 2010

E. CONFERENCE COMMITTEES

Program Committee, 31st Symposium on Microelectronics Technology and Devices, 2016

Program Committee, SBMicro, 2015

Program Committee, 29th Symposium on Microelectronics Technology and Devices, 2014

Program Committee, SBMicro 2013


Program Committee, IEEE NANO 2013

Program Committee, SBMicro 2012

Session co-Chair in IEEE NMDC conference 2010

F. JOURNAL EDITORIAL AND REVIEWING

Associate Editor, Journal of Computational Electronics (JCEL), 2014−

Editor, Computational and Theoretical Nanoscience, Encyclopedia of Complexity and Systems Science,

Springer, New York, 2013−

Editorial Board, Advances in Nano Research (ANR), 2012−

Journal Reviewer:

Optics Express

Optics Letter

Solid-State Electronics

IEEE Trans. on Electron Devices

IEEE Trans. on Nanotechnology

Journal of Numerical Modeling

Journal of Computational Electronics

Physical Review B

Physical Review Letter

Applied Physics Letter

Journal of Applied Physics

G. NSF CENTER ADVISORY BOARD

User/Science Advisory Board of nanoHUB for NSF Network for Computational Nanotechnology, 2012-

H. NSF XSEDE

Campus Champion, NSF’s XSEDE Cyberinfrastructure, 2015-

I. OTHER

nanoHUB User Workshop, West Lafayette, IN, August 30-31, 2015

XSEDE 2015 Conference, St. Louis, MO, July 26-30, 2015

NSF nano-bio node meeting at University of Illinois Urbana-Champaign, April 2014

NSF I/U CRC workshop/seminars with industry partners 2007, 2008, 2010, 2012

ORNL Seminar on High-Performance Computing, February 2011

NCN Workshop, Phoenix, AZ, April 2014

SIU Workshop on Engineering Teaching 2007

nanoHUB Workshop, Chicago, IL, November 6–8, 2009

curriculum vitae of shaikh shahid ahmed · curriculum vitae of shaikh shahid ahmed i. professional...

Documents