cvd & ald [email protected]. cvd & ald chemical vapor deposition cvd atomic layer...
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CVD & ALDChemical Vapor Deposition CVDAtomic Layer Deposition ALD
Alternatives to PVD, but only partially.
Major uses:
-optical fiber fabrication-films in microelectronics & MEMS-optical coatings-solar cells-a-Si and poly-Si for flat panel displays
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CVD schematically
Gas phase convection
Diffusion through boundary layer
Surface processes: •adsorption•surface reaction•byproduct desorption
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CVD reactions
Gaseous precursor + surface reaction solid film + gaseous byproducts
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Thermal CVD reactor:gaseous precursors, resistive heating
Franssila: Introduction to Microfabrication
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Thermal CVD reactor: liquid precursors, lamp heating
Changsup Ryu, PhD thesis, Stanford University, 1998
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Common CVD reactions
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Copper: sputter vs. CVD
Sputtered Cu 0.5 µm on Ta (up)
CVD Cu 0.5 µm on Ta (bottom right)
CVD Cu 0.5 µm on TiN (top right)
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Thermodynamics of CVD
Pierson: Handbook of CVD, p. 22
ΔG < 0 for reaction to take place
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Boundary layer = stagnant gas layer
Pierson: Handbook of CVD, p. 36
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Boundary layer thickness
density
viscosity
Re = Reynolds number
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Surface limited vs. mass transport limited reactions
mass transportlimited
surface reactionlimited
slope = Ea1
slope = Ea2
high T low T (1/T)
log rate
When temperature is low, surface reaction rate is slow, and overabundance of reactants is available. Reaction is then surface reaction limited. When temperature increases, surface reaction rate increases exponentially and above a certain temperature all source gas molecules react at the surface. The reaction is then in mass-transport limited regime (also known as diffusion limited regime).
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Surface limited vs. mass transport limited reactions (2)
A batch reactor operating in surface reaction limited mode:
-slow reaction-many wafers
A mass transport limited reactor:-single wafer-high deposition rate
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Surface processes in deposition
condensation
re-evaporation
binding at kinkbinding at defect
adsorption nucleation surface diffusion
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Adsorption processes
• SiH4 (g) SiH4 (ad) Si (c) + 2 H2 (g)• usual process: molecular adsorption
• Zn (g) + Se (a) ZnSe (c)• separate vapors adsorb strongly to the other
specie
• passivation protects surface from reaction• hydrogen typical passivation agent
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Silicon CVD from SiH4
Smith: Thin-film depositionWanted deposition reaction
Unwanted side reaction
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Polysilicon
• SiH4 (g) ==> Si (s) + 2 H2 (g)• Deposited by CVD at 625oC true poly• Can be deposited at 575oC amorphous• Anneal after deposition: a-Si poly !• Typical thickness 100 nm-2 µm
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Deposition temperature affects grain size
Post- deposition anneal affects grain size
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Poly vs. <Si>
Density: same 2.3 g/cm3
Young’s modulus: same 170 GPa
CTE: same 2.5 ppm/K
Thermal conductivity:
<Si> 156 W/K*m (at room temp)
poly 32 W/K*m
Carrier mobility:
<Si> 100 cm2/Vs
poly 10 cm2/VsPoly resistivity always higher !
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PECVD: Plasma Enhanced CVD
• Plasma aids in chemical reactions• Can be done at low temperatures • Wide deposition parameter range • High rates (1-10 nm/s) (thermal 10% of this)
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PECVD @ 300oC: can be deposited on many materials
Oxide:SiH4 (g) + N2O (g) ==> SiO2 + N2 + 2H2
Nitride:3 SiH2Cl2 (g) + 4 NH3 (g) ==> Si3N4 (s) + 6 H2 (g) + 6 HCl (g)
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SiNx:H: thermal vs. plasma
Smith: J.Electrochem.Soc. 137 (1990), p. 614
PECVD at 300oC
Thermal CVD at 900oC
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Nitride thermal vs. PECVD (1)
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Nitride thermal vs. PECVD (2)
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Half-time
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Step coverage in CVD
Cote, D.R. et al: Low-temperature CVD processes and dielectrics, IBM
J.Res.Dev. 39 (1995), p. 437
Quite OK, but the “keyhole” might be a minor problem
(PECVD)
Conformal step coverage
(thermal CVD processes)
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Grain size & roughness
Vallat-Sauvain
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Hydrogen in PECVD films
30 at% hydrogen is usual; 3-5% is as small as it gets
3SiH2Cl2 (g) + 4 NH3 (g) ==> Si3N4 (s) + 6 H2 (g) + 6 HCl (g)
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CVD films lose thickness upon anneal
Polysilicon
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Film quality: etch rate
With SiO2, BHF etch rate is a film quality measure (should be no more than 2X thermal oxide reference
Hey et al: Solid State Technology April 1990, p. 139
Low pressure equals more bombardment, and thus denser film, and compressive stress
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Stress affects by:
pressure
frequency
temperature
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PECVD reactors (1)
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PECVD reactors (2)
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Roll-to-roll PECVD
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ALD: Atomic Layer Deposition
Precursors introduced in pulses, with purging in-between
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Surface saturation
Irreversible saturation ALD reactions:
Surface saturates with a monolayer of precursor, strong chemisorption (=chemical bonds formed)
Reversible saturation:
Physisorption only (weak bonds like van der Waals): once precursor flux is stopped, surface specie will desorb.
Irreversible non-saturating.
CVD regime:more reactants in, more film is deposited (continuosly)
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ALD process based on:
conformal film
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ALD window
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Deposition rateBasically one atomic layer per pulse
In practise less than an atomic layer because:
a) Inactive surface sites
b) Steric hindrance: a large precursor molecule prevents another precursor molecule from approaching the reactive site
Al2O3 deposition it is 1.1 Å/cycle (0.11 nm/cycle)
TiN it is 0.2 Å/cycle
If pulses are one second 15*monolayer thickness/minute ~ 2 nm/min
If 0.1 second pulses 20 nm/min max.
a b
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ALD reactors
Suvi Haukka 2005
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ALD uniformity(=thickness across the wafer)
HfO2 dielectric marathon test: 2000 wafers
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ALD conformality(=step coverage in microstructures)Excellent conformality: all surfaces coated by diffusing gaseous precursors in the surface reaction limited mode.
Al2O3/TiO2 nanolaminate TiN barrier
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Step coverage (2)
Step coverage good also in high aspect ratio grooves,
BUT pulse lenghts have to to be increased
(in coating porous materials, pulses last for minutes !!).
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Structure: amorphous vs. polycrystalline ?
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Crystallinity
Vehkamäki et al. (2001)
amorphous aluminum oxide Polycrystalline strontium titanate
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Materials deposited by ALD
Important missing materials:•silicon •silicon nitride
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ALD applications
1 nm thick catalysts (Pt, Pd)
2 nm thick TiN barrier layers underneath copper
6 nm thick CMOS gate oxides like HfO2
10 nm thick etch masks for plasma etching (Al2O3)
30 nm thick antireflection coatings in solar cells (Al2O3)
200 nm thick barrier layers in flat panel displays (Al2O3)
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New materials: nanolaminates
Adriana Szeghalmi,Stephan Senz, Mario Bretschneider, Ulrich Gösele, and Mato Knez, APL 2009
Al2O3 and Ta2O5
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Plasma ALD (PEALD)
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Plasma ALD benefits
Plasma can break down precursors at lower temperature
New precursors become available because plasma can break down precursors that could not be used in thermal ALD
Ions can kick of loosely bound specie from surface, densifying the film
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PEALD equipment
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ALD process development
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PVD CVD & ALD
Atoms as source material Molecules as source materials
Solid source materials Solid, liquid, gas precursors
Vacuum/high vacuum Fluid dynamics important
Elemental films mostly Molecular/compound films mostly, Chemical bonds broken & formed
Room temperature Needs elevated temperatures (or plasma activation)
Alloy films easily (W:N) Elements and compounds OK, alloys more difficult
One process, many materials Each process materials specific
Al, Au, Cu, Pt, … SiO2 SiO2, Si3N4, Al2O3, HfO2, … Si, W
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Summary
• Thermal CVD: excellent film quality• PECVD: reasonable film quality at low T• ALD: excellent film quality at low T
• Thermal CVD: high temperature needed• PECVD: very high rate possible• ALD: best for very thin films