d 2581 data sheet

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  • 7/22/2019 d 2581 Data Sheet

    1/4

    O3098TS (KOTO) TA1138 No.5818-1/4

    SANYO Electric Co.,Ltd. Semiconductor Bussiness HeadquatersTOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

    Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraftscontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

    SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or otherparameters) listed in products specifications of any and all SANYO products described or containedherein.

    NPN Triple Diffused Planar Silicon Transistor

    Color TV Horizontal DeflectionOutput Applications

    Ordering number:5818

    2SD2581

    Specifications

    Absolute Maximum Ratings at Ta = 25C

    16.0

    2.0

    2.8

    1.0

    4.

    0

    21.

    0

    5.

    0

    8.

    0

    22.

    0

    20.

    4

    5.6

    3.1

    2.0

    2.

    0

    0.6

    5.455.45

    1 2 3

    3.

    5

    3.4

    Electrical Characteristics at Ta = 25C

    Package Dimensionsunit:mm

    2039D

    [2SD2581]

    Features High speed.

    High breakdown voltage (VCBO=1500V).

    High reliability (Adoption of HVP process).

    Adoption of MBIT process.

    1:Base

    2:Collector

    3:Emitter

    SANYO:TO3PML

    retemaraP lobmyS snoitidnoC sgnitaR tinU

    egatloVesaB-ot-rotcelloC VOBC

    0051 V

    egatloVrettimE-ot-rotcelloC V OEC 008 V

    egatloVesaB-ot-rettimE V OBE 6 V

    tnerruCrotcelloC IC 01 A

    )eslup(tnerruCrotcelloC I PC 03 A

    noitapissiDrotcelloC PC 0.3 W

    07 W

    erutarepmeTnoitcnuJ jT 051

    erutarepmeTegarotS gtsT 051+ot55

    Tc=25C

    C

    C

    retemaraP lobmyS snotidnoCsgnitaR

    tinUnim pyt xam

    tnerruCffotuCrotcelloC I OBC V BC I,V008= E 0= 01 A

    tnerruCffotuCrotcelloC I SEC V EC R,V0051= EB 0= 0.1 Am

    egatloVniatsuSrotcelloC V )sus(OEC IC I,Am001= B 0= 008 V

    tnerruCffotuCrettimE I OBE V BE I,V4= C 0= 0.1 Am

    Continued on next page.

  • 7/22/2019 d 2581 Data Sheet

    2/4

    No.5818-2/4

    2SD2581

    00 1 2 3 4 5 6 7 8 9 10

    1

    2

    3

    4

    5

    6

    7

    8

    9

    10

    00 0.2 0.4 0.6 0.8 1.0 1.2 1.4

    1

    2

    3

    4

    5

    6

    7

    8

    9

    11

    10

    1.0

    2

    3

    5

    2

    3

    5

    7

    7

    0.1

    3

    5

    7

    0.1 1.0 107 2 23 5 7 2 3 5 7

    1.0

    0.1 1.0 10

    10

    77

    2

    3

    5

    2

    3

    5

    7

    7

    2 3 5 7 2 23 5 7

    VCE=5V

    Ta=120C

    25C

    -40C

    VCE=5V

    25 C

    -40 C

    Ta=120C

    25C

    120C

    Ta=-40C

    IC/IB=5

    IB=0

    2.0A

    0.2A

    0.4A

    0.6A

    0.8A

    1.0A1.2A

    1.4A 1.6A 1.8A

    hFE - IC

    IC - VCE IC - VBE

    VCE(sat) - IC

    DCCurrentGain,

    hFE

    Collector Current, IC A Collector Current, IC A

    CollectorCurrent,

    IC

    A

    Collector-to-Emitter Voltage, VCE V

    CollectorCurrent,

    IC

    A

    Base-to-Emitter Voltage, VBE V

    CollectortoEmitter

    SaturationVoltage,VCE(sat)

    V

    IB1

    IB2

    PW=20s

    DC1%

    INPUT

    OUTPUT

    50

    VR

    RB

    RL=33.3

    100F 470F

    VBE=2V VCC=200V

    + +

    Switching Time Test Circuit

    retemaraP lobmyS snotidnoCsgnitaR

    tinUnim pyt xam

    egatloVnoitarutaSrettimE-ot-rotcelloC V )tas(EC IC I,A8= B A6.1= 5 V

    egatloVnoitarutaSrettimE-ot-esaB V )tas(EB IC I,A8= B A6.1= 5.1 V

    niaGtnerruCCD h EF 1 V EC I,V5= C A1= 02 53

    hEF 2 V

    EC I,V5=

    C A8= 5 8

    emiTllaF tf IC I,A6= 1B I,A2.1= 2B A4.2= 3.0 s

    Continued from preceiding page.

  • 7/22/2019 d 2581 Data Sheet

    3/4

    No.5818-3/4

    2SD2581

    10 100

    0.1

    23

    57

    1.0

    2

    3

    5

    23

    5

    23

    5

    7

    107

    0.1

    2

    3

    5

    1.0

    7

    2

    3

    5

    2

    3

    5

    10

    7

    3 5 7 2 3 5 7 10002 3 5 7 1005 7 10002 3 5 2 3 57

    0.1 1.0 107 2 23 5 7 2 3 5 7 0.1 1.0 107 2 3 5 7 2 3 5 7

    1.0

    2

    3

    5

    2

    3

    5

    7

    7

    0.1

    7

    1.0

    2

    3

    5

    7

    10

    2

    3

    5

    7

    0.1

    7

    L=500H

    IB2=-3A

    Tc=25C1 pulse

    Tc=25C

    1 pulse

    PT=

    100sIC

    ICP

    300s

    1ms10

    ms

    PC=70W

    DC

    operation

    VCC=200V

    IC/IB1=5

    IB2/IB1=2

    R load

    VCC=200VIC=6AIB1=1.2ARload

    tf

    tf

    tstgtstg

    Forward Bias A S O

    SW Time - IC SW Time - IB2

    Reverse Bias A S O

    Collector-to-Emitter Voltage, VCE V

    Base Current, IB2 ACollector Current, IC A

    SwitchingTime,SW

    Times

    SwitchingTime,SW

    Times

    CollectorCurrent,IC

    A

    CollectorCurrent,IC

    A

    Collector-to-Emitter Voltage, VCE V

    080 100 120 140 1606040200 80 100 120 140 1606040200

    20

    40

    80

    60

    70

    0

    1

    2

    3

    4 PC -

    Ta PC -

    Tc

    Noheatsink

    CollectorDissipation,

    PC

    W

    Ambient Temperature, Ta C

    CollectorDissipation,

    PC

    W

    Case Temperature, Tc C

  • 7/22/2019 d 2581 Data Sheet

    4/4

    PS No.5818-4/4

    This catalog provides information as of October, 1998. Specifications and information herein are subject

    to change without notice.

    Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customer'sproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customer's products or equipment.

    SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

    circuits and error prevention circuits for safe design, redundant design, and structural design.

    In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.

    No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

    Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

    Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, but

    no guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

    2SD2581