darling ton push-pull amplifier notes

NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORSISSUE 1 MARCH 94

FEATURES

* 80 Volt VCEO

* 1 Amp continuous current

* Gain of 2K at IC=1 Amp

* Ptot

= 1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX602 ZTX603 UNIT

Collector-Base Voltage VCBO 80 100 V

Collector-Emitter Voltage VCEO 60 80 V

Emitter-Base Voltage VEBO 10 V

Peak Pulse Current ICM 4 A

Continuous Collector Current IC 1 A

Power Dissipation at Tamb = 25°Cderate above 25°C

Ptot 15.7

WmW/ °C

Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-BaseBreakdown Voltage

V(BR)CBO 80 100 V IC=100µA

Collector-EmitterBreakdown Voltage

V(BR)CEO 60 80 V IC=10mA*

Emitter-BaseBreakdown Voltage

V(BR)EBO 10 10 V IE=100µA

Collector Cut-OffCurrent

ICBO 0.01

100.01

10

µAµAµAµA

VCB=60VVCB=80VVCB=60V,T

amb=100°C

VCB=80V,Tamb

=100°C

Emitter Cut-OffCurrent

IEBO 0.1 0.1 µA VEB=8V

Colllector-EmitterCut-Off Current

ICES 1010

µAµA

VCES=60VVCES=80V

Collector-EmitterSaturation Voltage

VCE(sat) 1.01.0

1.01.0

VV

IC=400mA,IB=0.4mA*IC=1A, IB=1mA*

Base-Emitter Saturation Voltage

VBE(sat) 1.8 1.8 V IC=1A, IB=1mA*

Base-Emitter Turn-On Voltage

VBE(on) 1.7 1.7 V IC=1A, VCE=5V*

E-Line

TO92 Compatible

ZTX602ZTX603

3-209

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Static ForwardCurrent TransferRatio

hFE 2K5K2K0.5K

100K

2K5K2K0.5K

100K

IC=50mA, VCE=5VIC=500mA, VCE=5V*IC=1A, VCE=5V*IC=2A, VCE=5V*

Transition Frequency fT 150 150 MHz IC=100mA, VCE=10Vf=20MHz

Input Capacitance Cibo 90 Typical pF VEB=500mV, f=1MHz

Output Capacitance Cobo 15 Typical pF VCB=10V, f=1MHz

Switching Times ton 0.5 Typical µs IC=500mA, VCE=10VIB1=IB2=0.5mA

toff 1.1 Typical µs

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

The maximum permissible operational temperature can be obtained from this graph usingthe following equation

Tamb (max ) =

Power (max ) − Power (act)0.0057

+25°C

Tamb(max )= Maximum operating ambient temperature

Power(max) = Maximum power dissipation figure, obtained from the above graph for agiven VCE and source resistance (RS)

Power(actual)= Actual power dissipation in users circuit

ZTX602ZTX603

C B E

Voltage Derating Graph

VCE - Collector-Emitter Voltage (Volts)

1.0

0.8

0.6

0.4

0

0.2

RS= 50KΩ

1 10 100

DC Conditions

RS= 200KΩ

RS= ∞

Maxim

um

Pow

er

Dis

sip

ation (W

)

200

RS= 1MΩ

RS= 10KΩ

ZTX603ZTX602

3-210

TYPICAL CHARACTERISTICS

VCE(sat) v IC

IC - Collector Current (Amps)

VC

E(sa

t) -

(Vol

ts)

IC -

Col

lect

or C

urre

nt (

Am

ps)

VCE - Collector Voltage (Volts)

Safe Operating Area

1 100010 1000.01

0.1

1

10Single Pulse Test at Tamb=25°C

D.C. 1s 100ms 10ms

1.0ms 100µs

0

0.4

0.01 0.1 101

0.6

0.8

1.0

1.2

1.4

1.6

1.8


VBE(sat) v IC

VB

E(sa

t) -

(Vol

ts)

0.6

0.01 100.1 1

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC/IB=100

IC/IB=100


hFE v IC

hFE

- G

ain

norm

alis

ed to

1 A

mp

0.001 0.01 100.1 1

0.5

1.0

1.5

2.0

2.5

VCE=5V


VBE(on) v IC

VB

E -

(Vol

ts)

0.6

1.0

1.4

1.8

0.01 0.1 1 100.2

VCE=5V

-55°C +25°C +100°C

0.4

0.8

1.2

1.6

2.2

0.2

-55°C +25°C +100°C +175°C

-55°C +25°C +100°C +175°C

0.4

-55°C +25°C +100°C

ZTX602 ZTX603

2.0

ZTX602ZTX603

3-211

©2000 Fairchild Semiconductor International Rev. A, February 2000

TIP

14

0/1

41

/14

2

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted

Electrical Characteristics TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage : TIP140 : TIP141 : TIP142

60 80 100

VVV

VCEO Collector-Emitter Voltage : TIP140 : TIP141 : TIP142

60 80 100

VVV

VEBO Emitter-Base Voltage 5 V

IC Collector Current (DC) 10 A

ICP Collector Current (Pulse) 15 A

IB Base Current (DC) 0.5 A

PC Collector Dissipation (TC=25°C) 125 W

TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

VCEO(sus) Collector-Emitter Sustaining Voltage : TIP140: TIP141: TIP142

IC = 30mA, IB = 0

60 80 100

VVV

ICEO Collector Cut-off Current : TIP140: TIP141: TIP142

VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0

2 2 2

mAmAmA

ICBO Collector Cut-off Current : TIP140: TIP141: TIP142

VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0

1 1 1

mAmAmA

IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA

hFE DC Current Gain VCE = 4V, IC = 5A VCE = 4V, IC = 10A

1000 500

VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA

2 3

VV

VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V

VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 10A 3 V

tD Delay Time VCC = 30V, IC = 5A IB1 = 20mA, IB2 = -20mA RL = 6Ω

0.15 µs

tR Rise Time 0.55 µs

tSTG Storage Time 2.5 µs

tF Fall Time 2.5 µs

TIP140/141/142

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE

= 1000 @ VCE = 4V, IC = 5A (Min.)

• Industrial Use• Complement to TIP145/146/147

Equivalent Circuit

B

E

C

R1 R2

R1 8kΩ≅R2 0.12kΩ≅

TO-3P1

1.Base 2.Collector 3.Emitter

©2000 Fairchild Semiconductor International

TIP

14

0/1

41

/14

2

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

0 1 2 3 4 50

1

2

3

4

5

6

7

8

9

10

IB = 2000uA

IB = 1800uA

IB = 1600uA

IB = 1400uA

IB = 1200uA

IB = 1000uA IB = 800uA

IB = 600uA

IB = 400uA

IB = 200uA

I C[A

], C

OL

LEC

TO

R C

UR

RE

NT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.1 1 10 10010

100

1k

10k

100k

VCE = 4V

h FE,

DC

CU

RR

EN

T G

AIN

IC[A], COLLECTOR CURRENT

0.1 1 10 1000.01

0.1

1

10

IC=500IB

VCE(sat)

VBE(sat)

VB

E(s

at)

, VC

E(s

at)

[V],

SA

TU

RA

TIO

N V

OLT

AG

E

IC[A], COLLECTOR CURRENT

1 10 100 100010

100

1000

f=0.1MHz

VCB[V], COLLECTOR-BASE VOLTAGE

Co

b[pF

], C

AP

AC

ITA

NC

E

1 10 100 10000.1

1

10

100

TIP141

TIP142

TIP140

DC

I C[A

], C

OL

LEC

TO

R C

UR

RE

NT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 1750

25

50

75

100

125

150

PC[W

], P

OW

ER

DIS

SIP

AT

ION

TC[oC], CASE TEMPERATURE

Darlington Push-Pull Amplifier Design

+

RE2

Vcc1

Q6Q2N3904

+

RE1

+Speaker

8

Q4

Q2N3906

Q2

Q2N3904

+

RB1

Q7

Q2N3906

Vee1

Q5Q2N3904

+

RB2

Q8

Q2N3906

Q3

MJE2955T

-

+ Vin

Q1

MJE3055T

Design a Darlington push-pull amplifier to deliver 4 W of

power to an 8 Ω, 5% load.

Complementary Silicon PlasticPower Transistors

. . . designed for use in general–purpose amplifier and switchingapplications.

• DC Current Gain Specified to 10 Amperes

• High Current Gain — Bandwidth Product —fT = 2.0 MHz (Min) @ IC

= 500 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating ÎÎÎÎÎÎÎÎÎÎ

Symbol ÎÎÎÎÎÎÎÎÎÎÎÎ

Value ÎÎÎÎÎÎ

Unit


Collector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎ

VCEO ÎÎÎÎÎÎÎÎÎÎÎÎ

60 ÎÎÎÎÎÎ

Vdc


Collector–Base Voltage ÎÎÎÎÎÎÎÎÎÎ

VCB ÎÎÎÎÎÎÎÎÎÎÎÎ

70 ÎÎÎÎÎÎ

Vdc


Emitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎ

VEB ÎÎÎÎÎÎÎÎÎÎÎÎ

5.0 ÎÎÎÎÎÎ

Vdc


Collector Current ÎÎÎÎÎÎÎÎÎÎ

IC ÎÎÎÎÎÎÎÎÎÎÎÎ

10 ÎÎÎÎÎÎ

Adc


Base Current ÎÎÎÎÎÎÎÎÎÎ

IB ÎÎÎÎÎÎÎÎÎÎÎÎ

6.0 ÎÎÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25CDerate above 25C

MJE3055T, MJE2955T

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

PD† ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

75

0.6

ÎÎÎÎÎÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage JunctionTemperature Range


TJ, Tstg ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

–55 to +150 ÎÎÎÎÎÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS


Characteristic ÎÎÎÎÎÎÎÎÎÎ

Symbol ÎÎÎÎÎÎÎÎÎÎÎÎ

Max ÎÎÎÎÎÎ

Unit


Thermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎ

θJC ÎÎÎÎÎÎÎÎÎÎÎÎ

1.67 ÎÎÎÎÎÎ

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

10

5.0

Figure 1. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.2

0.120 30

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C (D = 0.1)

I C, C

OLL

EC

TO

R C

UR

RE

NT

(AM

P)

dc

7.0 10

5.0 ms 1.0ms

50 60

0.5

7.0

3.0

0.7

0.3

TJ = 150°C

100µsThere are two limitations on the power handling ability of

a transistor: average junction temperature and secondbreakdown. Safe operating area curves indicate IC – VCElimits of the transistor that must be observed for reliableoperation; i.e., the transistor must not be subjected to greaterdissipation than the curves indicate.

The data of Figure 1 is based on TJ(pk) = 150C. TC isvariable depending on conditions. Second breakdown pulselimits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitationswill reduce the power that can be handled to values less thanthe limitations imposed by second breakdown. (SeeAN415A)

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

Semiconductor Components Industries, LLC, 2002

April, 2002– Rev. 41 Publication Order Number:

MJE2955T/D

MJE2955T

MJE3055T

10 AMPERECOMPLEMENTARY

SILICONPOWER TRANSISTORS

60 VOLTS75 WATTS

*ON Semiconductor Preferred Device

*PNP

NPN*

CASE 221A–09TO–220AB

STYLE 1:PIN 1. BASE

2. COLLECTOR3. EMITTER

4. COLLECTOR1

23

4

MJE2955T MJE3055T

http://onsemi.com2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic ÎÎÎÎÎÎÎÎÎÎ

Symbol ÎÎÎÎÎÎ

MinÎÎÎÎÎÎÎÎ

Max ÎÎÎÎÎÎ

Unit


OFF CHARACTERISTICS


Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) ÎÎÎÎÎÎÎÎÎÎ

VCEO(sus) ÎÎÎÎÎÎ

60 ÎÎÎÎÎÎÎÎ

— ÎÎÎÎÎÎ

VdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = 30 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎICEO

ÎÎÎÎÎÎ—ÎÎÎÎÎÎÎÎ700

ÎÎÎÎÎÎµAdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


Collector Cutoff Current(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ICEXÎÎÎÎÎÎÎÎÎÎÎÎ

——

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

1.05.0

ÎÎÎÎÎÎÎÎÎÎÎÎ

mAdc


Collector Cutoff Current(VCB = 70 Vdc, IE = 0)(VCB = 70 Vdc, IE = 0, TC = 150C)


ICBO ÎÎÎÎÎÎÎÎÎ

——


1.010

ÎÎÎÎÎÎÎÎÎ

mAdc


Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ÎÎÎÎÎÎÎÎÎÎ

IEBO ÎÎÎÎÎÎ

— ÎÎÎÎÎÎÎÎ

5.0 ÎÎÎÎÎÎ

mAdc


ON CHARACTERISTICS


DC Current Gain (1)(IC = 4.0 Adc, VCE = 4 0 Vdc)(IC = 10 Adc, VCE = 4.0 Vdc)


hFE ÎÎÎÎÎÎÎÎÎ

205.0


100—

ÎÎÎÎÎÎÎÎÎ

—


Collector–Emitter Saturation Voltage (1)(IC = 4.0 Adc, IB = 0.4 Adc)(IC = 10 Adc, IB = 3.3 Adc)


VCE(sat) ÎÎÎÎÎÎÎÎÎ

——


1.18.0

ÎÎÎÎÎÎÎÎÎ

Vdc


Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc) ÎÎÎÎÎÎÎÎÎÎ

VBE(on)ÎÎÎÎÎÎ

— ÎÎÎÎÎÎÎÎ

1.8 ÎÎÎÎÎÎ

VdcÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS


Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz) ÎÎÎÎÎÎÎÎÎÎ

fT ÎÎÎÎÎÎ

2.0ÎÎÎÎÎÎÎÎ

— ÎÎÎÎÎÎ

MHz

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 20%.

Marc E Herniter

MJE2955T MJE3055T

http://onsemi.com3

0

TC, CASE TEMPERATURE (°C)

75 100 17525 50

Figure 2. DC Current Gain

125 150

500

0.01

Figure 3. Power Derating

IC, COLLECTOR CURRENT (AMP)

5.00.02 0.05 0.1 0.2 1.0 2.0 100.5

300

200

100

50

30

90

0

80

60

40

70

50

hF

E, D

C C

UR

RE

NT

GA

IN

20

10

5.0

TJ = 150°C

25°C

-55°C

VCE = 2.0 V

PD

, PO

WE

R D

ISS

IPA

TIO

N (

WA

TT

S)

30

10

20

MJE3055T

MJE2955T

0.1


0.5 1.0 100.2 0.3 2.0 3.0

Figure 4. “On” Voltages

2.0

0

1.6

1.2

0.8

V, V

OLT

AG

E (

VO

LTS

)

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

MJE2955T

0.1


0.5 1.0 100.2 0.3 2.0 3.0

1.4

0

1.2

1.0

0.8V,

VO

LTA

GE

(V

OLT

S)

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

MJE3055T

0.6

0.2

Marc E Herniter

CB E

TO-92

C

B

E

BC

C

SOT-223

E

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value Units

VCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 60 V

VEBO Emitter-Base Voltage 6.0 V

IC Collector Current - Continuous 200 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

2001 Fairchild Semiconductor Corporation

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units

2N3904 *MMBT3904 **PZT3904

PD Total Device DissipationDerate above 25°C

6255.0

3502.8

1,0008.0

mWmW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.

2N3904 MMBT3904

SOT-23Mark: 1A

PZT3904

2N

39

04

/ MM

BT

39

04

/ PZ

T3

90

4

2N3904/MMBT3904/PZT3904, Rev A

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

V(BR)CEO Collector-Emitter BreakdownVoltage

IC = 1.0 mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V

IBL Base Cutoff Current VCE = 30 V, VEB = 3V 50 nA

ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA

OFF CHARACTERISTICS

ON CHARACTERISTICS*

SMALL SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2pItf=.4 Vtf=4 Xtf=2 Rb=10)

Spice Model

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,f = 100 MHz

300 MHz

Cobo Output Capacitance VCB = 5.0 V, IE = 0,f = 1.0 MHz

4.0 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0,f = 1.0 MHz

8.0 pF

NF Noise Figure IC = 100 µA, VCE = 5.0 V,RS =1.0kΩ,f=10 Hz to 15.7kHz

5.0 dB

td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns

tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns

ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns

tf Fall Time IB1 = IB2 = 1.0 mA 50 ns

hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 V

40701006030

300

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.20.3

VV

VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.65 0.850.95

VV

2N

39

04

/ MM

BT

39

04

/ PZ

T3

90

4NPN General Purpose Amplifier

(continued)

Marc E Herniter

2N3904 / M

MB

T3904 / P

ZT

3904

Typical Characteristics

Base-Emitter ON Voltage vsCollector Current

0.1 1 10 1000.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V

-

BA

SE

-EM

ITT

ER

ON

VO

LTA

GE

(V

)B

E(O

N)

C

V = 5VCE

25 °C

125 °C

- 40 °C

NPN General Purpose Amplifier(continued)

Base-Emitter SaturationVoltage vs Collector Current

0.1 1 10 100

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V

-

BA

SE

-EM

ITT

ER

VO

LTA

GE

(V)

BE

SA

T

C

β = 10

25 °C

125 °C

- 40 °C

Collector-Emitter SaturationVoltage vs Collector Current

0.1 1 10 100

0.05

0.1

0.15

I - COLLECTOR CURRENT (mA)V

-

CO

LL

EC

TOR

-EM

ITT

ER

VO

LTA

GE

(V

)C

ES

AT

25 °C

C

β = 10

125 °C

- 40 °C

Collector-Cutoff Currentvs Ambient Temperature

25 50 75 100 125 150

0.1

1

10

100

500

T - AMBIENT TEMPERATURE ( C)

I

- C

OL

LE

CTO

R C

UR

RE

NT

(n

A)

A

V = 30VCB

CB

O

°

Capacitance vs Reverse Bias Voltage

0.1 1 10 1001

2

3

4

5

10

REVERSE BIAS VOLTAGE (V)

CA

PAC

ITA

NC

E (

pF)

C obo

C ibo

f = 1.0 MHz

Typical Pulsed Current Gainvs Collector Current

0.1 1 10 1000

100

200

300

400

500

I - COLLECTOR CURRENT (mA)h

- T

YP

ICA

L P

UL

SE

D C

UR

RE

NT

GA

INF

E

- 40 °C

25 °C

C

V = 5VCE

125 °C

Marc E Herniter

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

0.25

0.5

0.75

1

TEMPERATURE ( C)

P

- PO

WE

R D

ISS

IPAT

ION

(W)

D

o

SOT-223

SOT-23

TO-92

Typical Characteristics (continued)

Noise Figure vs Frequency

0.1 1 10 1000

2

4

6

8

10

12

f - FREQUENCY (kHz)

NF

- N

OIS

E F

IGU

RE

(d

B)

V = 5.0VCE

I = 100 µA, R = 500 ΩC S

I = 1.0 mA R = 200ΩC

S

I = 50 µA

R = 1.0 kΩCS

I = 0.5 mA R = 200ΩC

S

kΩ

Noise Figure vs Source Resistance

0.1 1 10 1000

2

4

6

8

10

12

R - SOURCE RESISTANCE ( )

NF

- N

OIS

E F

IGU

RE

(d

B)

I = 100 µAC

I = 1.0 mAC

S

I = 50 µAC

I = 5.0 mAC

θ - DE

GR

EE

S

0

406080100120

140160

20

180

Current Gain and Phase Anglevs Frequency

1 10 100 10000

5

10

15

20

25

30

35

40

45

50

f - FREQUENCY (MHz)

h

-

CU

RR

EN

T G

AIN

(d

B)

θ

V = 40VCE

I = 10 mAC

h fe

fe

Turn-On Time vs Collector Current

1 10 1005

10

100

500


TIM

E (

nS

)

I = I = B1

C

B2I c

1040V

15V

2.0V

t @ V = 0VCBd

t @ V = 3.0VCCr

Rise Time vs Collector Current

1 10 1005

10

100

500


t

- R

ISE

TIM

E (

ns)

I = I = B1

C

B2I c

10

T = 125°C

T = 25°CJ

V = 40VCC

r

J

2N3904 / M

MB

T3904 / P

ZT


(continued)

2N3904 / M

MB

T3904 / P

ZT


(continued)

Typical Characteristics (continued)

Storage Time vs Collector Current

1 10 1005

10

100

500


t

- S

TOR

AG

E T

IME

(n

s)

I = I = B1

C

B2I c

10

S

T = 125°C

T = 25°CJ

J

Fall Time vs Collector Current

1 10 1005

10

100

500


t

- FA

LL

TIM

E (

ns)

I = I = B1

C

B2I c

10V = 40VCC

f

T = 125°C

T = 25°CJ

J

Current Gain

0.1 1 1010

100

500


h

- C

UR

RE

NT

GA

IN

V = 10 VCE

C

fe

f = 1.0 kHzT = 25 CA

o

Output Admittance

0.1 1 101

10

100


h

- O

UT

PU

T A

DM

ITTA

NC

E (

mho

s) V = 10 VCE

C

oe

f = 1.0 kHzT = 25 CA

oµ

Input Impedance

0.1 1 100.1

1

10

100


h

- IN

PU

T IM

PE

DA

NC

E (

k )

V = 10 VCE

C

ie

f = 1.0 kHzT = 25 CA

oΩ

Voltage Feedback Ratio

0.1 1 101

2

3

4

5

7

10


h

- V

OLT

AG

E F

EE

DB

AC

K R

AT

IO (

x10

)

V = 10 VCE

C

re

f = 1.0 kHzT = 25 CA

o

_4

VoutVin

+

RE2

1

Q1

MJE3055T

+Speaker

8

0

Q2

Q2N3904

Q4

Q2N3906

0+

RE1

1

Q5Q2N3904

-

+

Tra

nsi

en

t A

na

lysi

s V1AMPLITUDE = 10FREQUENCY = 1k 0

+

RB2

2.7k

Vcc1

Q8

Q2N3906

Vee1

Q3

MJE2955T

Q6Q2N3904

Vcc1

Q7

Q2N3906

+

-

V2DC = 15

+

-

V3DC = 15

Vee1

+

RB1

2.7k

Date/Time run: 09/25/02 21:33:00** Profile: "SCHEMATIC1-Waveforms" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pu...

Temperature: 27.0

Date: September 25, 2002 Page 1 Time: 21:37:24

(A) drawings-SCHEMATIC1-Waveforms.dat (active)

Time

0s 0.5ms 1.0ms 1.5ms 2.0msV(VIN) V(VOUT)

-10V

-5V

0V

5V

10V

VoutVin

Q1

MJE3055T

Vee1

+

RE1

1

0

Q2

Q2N3904

Sweep

+

-

AC

V4Magnitude = 1Phase = 0

Q5Q2N3904

0

Q4

Q2N3906

+

RE2

1

Q7

Q2N3906

Vcc1

+

-

V2DC = 15

Vee1

+

RB1

2.7k

Vcc1

+Speaker

8

Q3

MJE2955T

0

Q8

Q2N3906

+

RB2

2.7k

+

-

V3DC = 15

Q6Q2N3904

Date/Time run: 09/25/02 21:38:27** Profile: "SCHEMATIC1-AC Sweep" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pul...

Temperature: 27.0


(B) drawings-SCHEMATIC1-AC Sweep.dat (active)

Frequency

1.0Hz 10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz 10MHz 100MHzV(Vout)

0.2V

0.4V

0.6V

0.8V

1.0V

(93.972,908.122m)

Date/Time run: 09/25/02 21:38:27** Profile: "SCHEMATIC1-AC Sweep" [ C:\Website\Rose_Classes\ECE351\Notes\OrCAD\Darlington Push-Pul...

Temperature: 27.0


(C) drawings-SCHEMATIC1-AC Sweep.dat (active)

Frequency

1.0Hz 10Hz 100Hz 1.0KHz 10KHz 100KHz 1.0MHz 10MHz 100MHzI(Speaker)/ I(V4)

0

40

80

120

160

(138.995,152.860)

darling ton push-pull amplifier notes

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