datasheet / datenblatt ih#15n120r3 - rtdigbt.com conducting igbt with monolithic body diode...

InductionHeatingSeriesReverseconductingIGBTwithmonolithicbodydiode

IHW15N120R3

Datasheet

IndustrialPowerControl

2

IHW15N120R3InductionHeatingSeries

Rev.2.3,2013-02-12

ReverseconductingIGBTwithmonolithicbodydiodeFeatures:

•Powerfulmonolithicbodydiodewithlowforwardvoltagedesignedforsoftcommutationonly•TRENCHSTOPTMtechnologyapplicationsoffers:-verytightparameterdistribution-highruggedness,temperaturestablebehavior-lowVCEsat-easyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVCEsat•LowEMI•QualifiedaccordingtoJESD-022fortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•Inductivecooking

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIHW15N120R3 1200V 15A 1.48V 175°C H15R1203 PG-TO247-pinGCE

3


Rev.2.3,2013-02-12

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

4


Rev.2.3,2013-02-12

Maximumratings

Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 30.015.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 45.0 A

TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 45.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 30.015.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 45.0 A

Gate-emitter voltageTransientGate-emittervoltage(tp=10µs,D<0.010) VGE

±20±25 V

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

254.0127.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+175 °C

Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.59 K/W

Diode thermal resistance,junction - case Rth(j-c) 0.59 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

5


Rev.2.3,2013-02-12

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=15.0ATvj=25°CTvj=125°CTvj=175°C

---

1.481.701.80

1.70--

V

Diode forward voltage VF

VGE=0V,IF=15.0ATvj=25°CTvj=125°CTvj=175°C

---

1.551.701.80

1.75--

V

Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 5.1 5.8 6.4 V

Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C

--

--

100.02500.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=15.0A - 13.9 - S

Integrated gate resistor rG none Ω

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 1165 -

Output capacitance Coes - 40 -

Reverse transfer capacitance Cres - 32 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=960V,IC=15.0A,VGE=15V - 165.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-off delay time td(off) - 300 - ns

Fall time tf - 46 - ns

Turn-off energy Eoff - 0.70 - mJ

Tvj=25°C,VCC=600V,IC=15.0A,VGE=0.0/15.0V,rG=14.6Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

6


Rev.2.3,2013-02-12

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=175°CTurn-off delay time td(off) - 370 - ns

Fall time tf - 90 - ns

Turn-off energy Eoff - 1.25 - mJ

Tvj=175°C,VCC=600V,IC=15.0A,VGE=0.0/15.0V,rG=14.6Ω,Lσ=180nH,Cσ=39pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

7


Rev.2.3,2013-02-12

Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,rG=14,6Ω)

f,SWITCHINGFREQUENCY[kHz]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000

10

20

30

40

50

TC=80°

TC=110°

Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

100

tp=1µs

20µs

50µs

200µs

1ms

10ms

DC

Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

50

100

150

200

250

300

Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

10

20

30

40

8


Rev.2.3,2013-02-12

Figure 5. Typicaloutputcharacteristic(Tj=25°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 30

15

30

45

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6. Typicaloutputcharacteristic(Tj=175°C)


IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 40

15

30

45

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

2 4 6 8 10 120

15

30

45Tj=25°CTj=175°C

Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0IC=7.5AIC=15AIC=30A

9


Rev.2.3,2013-02-12

Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=14,6Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

0 5 10 15 20 25 3010

100

1000td(off)

tf

Figure 10. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=15A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]


10 20 30 40 5010

100

1000td(off)

tf

Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=600V,VGE=15/0V,IC=15A,rG=14,6Ω,testcircuitinFig.E)



25 50 75 100 125 150 17510

100

1000td(off)

tf

Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.4mA)


VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 150 1752

3

4

5

6

7min.typ.max.

10


Rev.2.3,2013-02-12

Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=14,6Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

0 5 10 15 20 25 300.0

0.5

1.0

1.5

2.0

2.5Eoff

Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=15A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

E,S


J]

10 20 30 40 501.0

1.1

1.2

1.3

1.4

1.5

1.6Eoff

Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=600V,VGE=15/0V,IC=15A,rG=14,6Ω,testcircuitinFig.E)


E,S


J]

25 50 75 100 125 150 1750.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3Eoff

Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=15A,rG=14,6Ω,testcircuitinFig.E)


E,S


J]

400 500 600 700 800 900 10000.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0Eoff

11


Rev.2.3,2013-02-12

Figure 17. Typicalturnoffswitchingenergylossforsoftswitching(indload,VCE=600V,VGE=15/0V,IC=15A,RG=14,6Ω,testcircuitinFig.E)

dv/dt,VOLTAGESLOPE[V/µs]

E,S


J]

100 1000 1E+40.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4Tj=25°CTj=175°C

Figure 18. Typicalgatecharge(IC=15A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 25 50 75 100 125 150 1750

2

4

6

8

10

12

14

16240V960V

Figure 19. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)


C,C

APACITANCE[pF]

0 10 20 3010

100

1000

Ciss

Coss

Crss

Figure 20. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: ri[K/W]: τi[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.01204762 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402

12


Rev.2.3,2013-02-12

Figure 21. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: ri[K/W]: τi[s]:

1 4.6E-3 2.4E-5

2 0.1431 3.3E-4

3 0.2097 3.1E-3

4 0.2185 0.01636424

5 0.012 0.1753518

6 1.9E-3 1.713276

7 2.1E-4 4.662402

Figure 22. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0 1 2 30

15

30

45Tj=25°CTj=175°C

Figure 23. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWARDVOLTAGE[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5IC=7.5AIC=15AIC=30A

13


Rev.2.3,2013-02-12

PG-TO247-3

14


Rev.2.3,2013-02-12

t

15


Rev.2.3,2013-02-12

RevisionHistory

IHW15N120R3

Revision:2013-02-12,Rev.2.3Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2009-04-01 -

2.1 2009-05-27 -

2.2 2011-04-05 Pack. draw. rev. 05, marking update

2.3 2013-02-12 Layout change

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

PublishedbyInfineonTechnologiesAG81726Munich,Germany81726München,Germany©2013InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

datasheet / datenblatt ih#15n120r3 - rtdigbt.com conducting igbt with monolithic body diode...

Documents