datasheet - stgb30h60dfb, stgp30h60dfb - trench gate ...15 30 ic (a) (v) 45 60 2.2 2.0 1.8 vge = 15...

12

3

TAB

TO-2201

3

TAB

D PAK2

Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode

Applications• Photovoltaic inverters• High frequency converters

DescriptionThese devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, whichrepresent an optimum compromise between conduction and switching loss tomaximize the efficiency of any frequency converter. Furthermore, the slightly positiveVCE(sat) temperature coefficient and very tight parameter distribution result in saferparalleling operation.

Product status link

STGB30H60DFB

STGP30H60DFB

Trench gate field-stop 600 V, 30 A high speed HB series IGBT

STGB30H60DFB, STGP30H60DFB

Datasheet

DS10468 - Rev 3 - May 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/STGB30H60DFBhttps://www.st.com/en/product/STGP30H60DFB

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 600 V

ICContinuous collector current at TC = 25 °C 60

AContinuous collector current at TC = 100 °C 30

ICP (1) Pulsed collector current 120

VGEGate-emitter voltage ±20

VTransient gate-emitter voltage ±30

IFContinuous forward current at TC = 25 °C 60

AContinuous forward current at TC = 100 °C 30

IFP (1) Pulsed forward current 120

PTOT Total power dissipation at TC = 25 °C 260 W

TSTG Storage temperature range - 55 to 150°C

TJ Operating junction temperature range - 55 to 175

1. Pulse width limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.58

°C/WRthJC Thermal resistance junction-case diode 2.08

RthJA Thermal resistance junction-ambient 62.5

STGB30H60DFB, STGP30H60DFBElectrical ratings

DS10468 - Rev 3 page 2/21

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 600 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 30 A 1.55 2

VVGE = 15 V, IC = 30 A, TJ = 125 °C 1.65

VGE = 15 V, IC = 30 A, TJ = 175 °C 1.75

VF Forward on-voltage

IF = 30 A 2 2.6

VIF = 30 A, TJ = 125 °C 1.7

IF = 30 A, TJ = 175 °C 1.6

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics


Cies Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

- 3659 -

pFCoes Output capacitance - 101 -

Cres Reverse transfer capacitance - 76 -

Qg Total gate chargeVCC = 520 V, IC = 30 A, VGE = 0 to 15 V(see Figure 28. Gate charge test circuit)

- 149 -

nCQge Gate-emitter charge - 25 -

Qgc Gate-collector charge - 62 -

STGB30H60DFB, STGP30H60DFBElectrical characteristics

DS10468 - Rev 3 page 3/21

Table 5. IGBT switching characteristics (inductive load)


td(on) Turn-on delay time

VCE = 400 V, IC = 30 A, VGE = 15 V,RG = 10 Ω (see Figure 27. Test circuitfor inductive load switching)

- 37 -ns

tr Current rise time - 14.6 -

(di/dt)on Turn-on current slope - 1643 - A/µs

td(off) Turn-off-delay time - 146 -ns

tf Current fall time - 23 -

Eon (1) Turn-on switching energy - 383 -

µJEoff (2) Turn-off switching energy - 293 -

Ets Total switching energy - 676 -

td(on) Turn-on delay time

VCE = 400 V, IC = 30 A, VGE = 15 V,RG = 10 Ω, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching)

- 35 -ns

tr Current rise time - 16.1 -

(di/dt)on Turn-on current slope - 1496 - A/µs

td(off) Turn-off-delay time - 158 -ns

tf Current fall time - 65 -

Eon (1) Turn-on switching energy - 794 -

µJEoff (2) Turn-off switching energy - 572 -

Ets Total switching energy - 1366 -

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)


trr Reverse recovery time

IF = 30 A, VR = 400 V, VGE = 15 V,

di/dt = 1000 A/μs (see Figure 27. Testcircuit for inductive load switching)

- 53 - ns

Qrr Reverse recovery charge - 384 - nC

Irrm Reverse recovery current - 14.5 - A

dIrr/dtPeak rate of fall of reverserecovery current during tb

- 788 - A/µs

Err Reverse recovery energy - 104 - µJ

trr Reverse recovery time

IF = 30 A, VR = 400 V, VGE = 15 V,

di/dt = 1000 A/µs, TJ = 175 °C(see Figure 27. Test circuit for inductiveload switching)

- 104 - ns

Qrr Reverse recovery charge - 1352 - nC

Irrm Reverse recovery current - 26 - A

dIrr/dtPeak rate of fall of reverserecovery current during tb

- 310 - A/µs

Err Reverse recovery energy - 407 - µJ

STGB30H60DFB, STGP30H60DFBElectrical characteristics

DS10468 - Rev 3 page 4/21

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

Ptot

150

100

00 50 TC (°C)75

(W)

25 100 125 150

50

200

175

250

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141353FSR

Figure 2. Collector current vs case temperature

IC

60

40

20

00 50 TC (°C)75

(A)

25 100 125 150

VGE ≥ 15V, TJ ≤ 175 °C

GIPG280120141346FSR

Figure 3. Output characteristics (TJ = 25 °C)

GIPG280120141156FSR

100

80

60

40

20

00 1 2 3 4 5

IC (A)

VCE (V)VGE =7 V

VGE =9 V

VGE =13 VVGE =11 V

VGE =15 V

Figure 4. Output characteristics (TJ = 175 °C)

GIPG280120141206FSR

100

80

60

40

20

00 1 2 3 4 5

IC (A)

VCE (V)VGE =7 V

VGE =9 V

VGE =11 VVGE =13 VVGE =15 V

Figure 5. VCE(sat) vs junction temperature

VCE(sat)

1.8

1.6

1.4

1.2-50 0 TJ (°C)

(V)

50 100 150

2.2

2.0

VGE = 15 V

IC = 60 A

IC = 30 A

IC = 15 A

GIPG280120141440FSR

Figure 6. VCE(sat) vs collector current

VCE(sat)

1.6

1.4

1.215 30 IC (A)

(V)

45 60

2.2

2.0

1.8

VGE = 15 V

TJ = 175 °C

TJ = 25 °C

TJ = -40 °C

2.4

GIPG280120141446FSR

STGB30H60DFB, STGP30H60DFBElectrical characteristics (curves)

DS10468 - Rev 3 page 5/21

Figure 7. Collector current vs switching frequency

GIPG280120141713FSR

80

60

40

20

0100 101 102

IC (A)

f (kHz)

TC = 80 °C

TC = 100 °C

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 10 Ω, VGE = 0/15 V , Tj = 175 °C

Figure 8. Forward bias safe operating area

IC

100

10

1

0.11 VCE(V)

(A)

10 100

10 µs

100 µs

1 ms

(single pulse TC = 25°C, TJ ≤ 175°C; VGE=15V)

Vce(sat) limit

GIPG090720141330FSR

Figure 9. Transfer characteristics

GIPG280120141330FSR

100

80

60

40

20

05 7 9 11

IC (A)

VGE (V)

Tj = 25 °C

Tj = 175 °C

VCE = 6 V

Figure 10. Diode VF vs forward current

VF

2.0

1.6

1.2

0.810 IF(A)

(V)

20

TJ= 175°C

30 40 50

TJ= 25°C

TJ= -40°C

60

2.8

2.4

GIPG090720141349FSR

Figure 11. Normalized VGE(th) vs junction temperature

VGE(th)(norm)

0.8

0.7

0.6-50 TJ(°C)0 50 100 150

0.9

1.0

VCE = VGE, IC = 1 mA

AM16060v1

Figure 12. Normalized V(BR)CES vs junction temperature

V(BR)CES(norm)

1.1

1.0

0.9-50 TJ(°C)0 50 100 150

IC= 2mA

AM16059v2


DS10468 - Rev 3 page 6/21

Figure 13. Capacitance variations

C

10VCE (V)

(pF)

0.1 1 10

Cies

100

1000

CoesCres

100

GIPG090720141358FSR

Figure 14. Gate charge vs. gate-emitter voltage

IG = 1mA

VGE (V)

4

2

00 Qg (nC)40 80 120 160

6

8

10

12

14

VCC = 520 V, IC = 30 A16

GIPG280120141455FSR

Figure 15. Switching energy vs collector current

E

0IC(A)

(µJ)

0 10 20

400

30 40

800

EON1200

VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C

50

EOFF

1600

60

GIPG090720141414FSR

Figure 16. Switching energy vs gate resistance

GIPG090720141421FSR

1400

1200

1000

800

600

4000 10 20 30 40

E(μJ)

RG (Ω)

VCC = 400 V, IC = 30 A, VGE = 15 V, TJ = 175 °C Eon

Eoff

Figure 17. Switching energy vs temperature

E

0TJ(°C)

(µJ)

20 60

200

400

600

100 140

EOFF

VCC= 400V, VGE= 15V, RG= 10Ω, IC= 30A

EON

800

GIPG090720141431FSR

Figure 18. Switching energy vs collector emitter voltage

GIPG090720141440FSR

1000

800

600

400

200

0100 200 300 400 500

E(μJ)

VCE (V)

Eon

Eoff

IC = 30 V, RG = 10 Ω, VGE = 15 V, TJ = 175 °C


DS10468 - Rev 3 page 7/21

Figure 19. Switching times vs collector current

t

IC(A)

(ns)

0 10 201

30

tf

TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V

tdoff

10

tr

tdon

40 50

100

GIPG100720141533FSR

Figure 20. Switching times vs gate resistance

t

10RG(Ω)

(ns)

0 10 20

100

30

tf

TJ= 175°C, VGE= 15V, IC= 30A, VCC= 400V

40

tdon

tdoff

tr

GIPG100720141549FSR

Figure 21. Reverse recovery current vs diode currentslope

Irm

0di/dt(A/µs)

(A)

0 500 1000

40

1500

IF = 30A, Vr = 400V

2000

60 =175°C

=25°C20

TJ

TJ

2500

GIPG100720141607FSR

Figure 22. Reverse recovery time vs diode current slope

trr

0di/dt(A/µs)

(µs)

0 500 1000

100

1500

IF = 30A, Vr = 400V

2000

150

=175°C

=25°C

200

50

TJ

TJ

GIPG110720140846FSR

Figure 23. Reverse recovery charge vs diode currentslope

Qrr

0di/dt(A/µs)

(nC)

0 500 1000

1500

1500

IF = 30A, Vr = 400V

2000

2000=175°C

=25°C1000

TJ

TJ

500

GIPG110720140854FSR

Figure 24. Reverse recovery energy vs diode currentslope

Err

0di/dt(A/µs)

(µJ)

0 500 1000

600

1500

IF = 30A, Vr = 400V

2000

1000

=175°C

=25°C200

TJ

TJ

400

800

GIPG110720140859FSR


DS10468 - Rev 3 page 8/21

Figure 25. Thermal impedance for IGBT

10 10 10 10 10 tp(s)-5 -4 -3-2 -1

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

ZthTO2T_B

Figure 26. Thermal impedance for diode


DS10468 - Rev 3 page 9/21

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF1000

µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)ton

tr(Ion)

td(off)

toff

tf

tr(Voff)tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IFtrr

ts tf

Qrr

IRRM

STGB30H60DFB, STGP30H60DFBTest circuits

DS10468 - Rev 3 page 10/21

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGB30H60DFB, STGP30H60DFBPackage information

DS10468 - Rev 3 page 11/21

https://www.st.com/ecopackhttp://www.st.com

4.1 D²PAK (TO-263) type A2 package information

Figure 31. D²PAK (TO-263) type A2 package outline

0079457_A2_26

STGB30H60DFB, STGP30H60DFBD²PAK (TO-263) type A2 package information

DS10468 - Rev 3 page 12/21

Table 7. D²PAK (TO-263) type A2 package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

A1 0.03 0.23

b 0.70 0.93

b2 1.14 1.70

c 0.45 0.60

c2 1.23 1.36

D 8.95 9.35

D1 7.50 7.75 8.00

D2 1.10 1.30 1.50

E 10.00 10.40

E1 8.70 8.90 9.10

E2 7.30 7.50 7.70

e 2.54

e1 4.88 5.28

H 15.00 15.85

J1 2.49 2.69

L 2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R 0.40

V2 0° 8°

Figure 32. D²PAK (TO-263) recommended footprint (dimensions are in mm)

Footprint

STGB30H60DFB, STGP30H60DFBD²PAK (TO-263) type A2 package information

DS10468 - Rev 3 page 13/21

4.2 D²PAK packing information

Figure 33. D²PAK tape outline

STGB30H60DFB, STGP30H60DFBD²PAK packing information

DS10468 - Rev 3 page 14/21

Figure 34. D²PAK reel outline

A

D

B

Full radius

Tape slot in core for tape start

2.5mm min.width

G measured at hub

C

N

40mm min. access hole at slot location

T

AM06038v1

Table 8. D²PAK tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base quantity 1000

P2 1.9 2.1 Bulk quantity 1000

R 50

T 0.25 0.35

W 23.7 24.3

STGB30H60DFB, STGP30H60DFBD²PAK packing information

DS10468 - Rev 3 page 15/21

4.3 TO-220 type A package information

Figure 35. TO-220 type A package outline

0015988_typeA_Rev_22

STGB30H60DFB, STGP30H60DFBTO-220 type A package information

DS10468 - Rev 3 page 16/21

Table 9. TO-220 type A package mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.55

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10.00 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13.00 14.00

L1 3.50 3.93

L20 16.40

L30 28.90

øP 3.75 3.85

Q 2.65 2.95

STGB30H60DFB, STGP30H60DFBTO-220 type A package information

DS10468 - Rev 3 page 17/21

5 Ordering information

Table 10. Order codes

Order code Marking Package Packing

STGB30H60DFB GB30H60DFB D²PAK Tape and reel

STGP30H60DFB GP30H60DFB TO-220 Tube

STGB30H60DFB, STGP30H60DFBOrdering information

DS10468 - Rev 3 page 18/21

Revision history

Table 11. Document revision history

Date Revision Changes

07-Aug-2014 1 Initial release.

28-Oct-2015 2Updated Figure 23 and Section 5.

Minor text changes.

23-May-2019 3

Modified Figure 3. Output characteristics (TJ = 25 °C), Figure 4. Output characteristics(TJ = 175 °C), Figure 9. Transfer characteristics, Figure 7. Collector current vsswitching frequency, Figure 18. Switching energy vs collector emitter voltage.

Minor text changes.


DS10468 - Rev 3 page 19/21

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

4.3 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19

STGB30H60DFB, STGP30H60DFBContents

DS10468 - Rev 3 page 20/21

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved


DS10468 - Rev 3 page 21/21

http://www.st.com/trademarks

1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)

3 Test circuits4 Package information4.1 D²PAK (TO-263) type A2 package information4.2 D²PAK packing information4.3 TO-220 type A package information

5 Ordering informationRevision history

datasheet - stgb30h60dfb, stgp30h60dfb - trench gate ...15 30 ic (a) (v) 45 60 2.2 2.0 1.8 vge = 15...

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