C(2, TAB)

E(3)NG1E3C2T

G(1)

Features• Maximum junction temperature: TJ = 175 °C• Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A• Very fast and soft recovery co-packaged diode• Minimized tail current• Tight parameter distribution• Low thermal resistance• Positive VCE(sat) temperature coefficient

Applications• Welding• Power factor correction• UPS• Solar inverters• Chargers

DescriptionThe newest IGBT 650 V HB2 series represents an evolution of the advancedproprietary trench gate field-stop structure. The performance of the HB2 series isoptimized in terms of conduction, thanks to a better VCE(sat) behavior at low currentvalues, as well as in terms of reduced switching energy. A very fast soft recoverydiode is co-packaged in antiparallel with the IGBT. The result is a product specificallydesigned to maximize efficiency for a wide range of fast applications.

Product status link

STGWA50H65DFB2

Product summary

Order code STGWA50H65DFB2

Marking G50H65DFB2

Package TO-247 long leads

Packing Tube

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO‑247 long leads package

STGWA50H65DFB2

Datasheet

DS13185 - Rev 1 - December 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/STGWA50H65DFB2?ecmp=tt9470_gl_link_feb2019&rt=ds&id=DS13185

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0 V) 650 V

ICContinuous collector current at TC = 25 °C 86

AContinuous collector current at TC = 100 °C 53

ICP (1)(2) Pulsed collector current 150

VGEGate-emitter voltage ±20

VTransient gate-emitter voltage (tp ≤ 10 μs) ±30

IFContinuous forward current at TC = 25 °C 60

AContinuous forward current at TC = 100 °C 38

IFP(1) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 150

PTOT Total power dissipation at TC = 25 °C 272 W

TSTG Storage temperature range -55 to 150°C

TJ Operating junction temperature range -55 to 175

1. Defined by design, not subject to production test.2. Pulse width is limited by maximum junction temperature.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJCThermal resistance junction-case IGBT 0.55

°C/WThermal resistance junction-case diode 1.14

RthJA Thermal resistance junction-ambient 50

STGWA50H65DFB2Electrical ratings

DS13185 - Rev 1 page 2/15

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 1 mA 650 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 50 A 1.55 2

V

VGE = 15 V, IC = 50 A,

TJ = 125 °C1.8

VGE = 15 V, IC = 50 A,

TJ = 175 °C1.9

VF Forward on-voltage

IF = 50 A 1.85 2.45

VIF = 50 A, TJ = 125 °C 1.65

IF = 50 A, TJ = 175 °C 1.45

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitanceVCE = 25 V, f = 1 MHz,

VGE = 0 V

- 2928 -

pFCoes Output capacitance - 162 -

Cres Reverse transfer capacitance - 78 -

Qg Total gate charge VCC = 520 V, IC = 50 A,

VGE = 0 to 15 V

(see Figure 28. Gate charge testcircuit)

- 151 -

nCQge Gate-emitter charge - 30 -

Qgc Gate-collector charge - 63 -

STGWA50H65DFB2Electrical characteristics

DS13185 - Rev 1 page 3/15

Table 5. Switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCC = 400 V, IC = 50 A,

VGE = 15 V, RG = 4.7 Ω

(see Figure 27. Test circuit forinductive load switching)

- 28 - ns

tr Current rise time - 20 - ns

Eon(1) Turn-on switching energy - 910 - μJ

td(off) Turn-off delay time - 115 - ns

tf Current fall time - 40 - ns

Eoff (2) Turn-off switching energy - 580 - µJ

td(on) Turn-on delay time

VCC = 400 V, IC = 50 A,

VGE = 15 V, RG = 4.7 Ω,

TJ = 175 °C

(see Figure 27. Test circuit forinductive load switching)

- 24 - ns

tr Current rise time - 17 - ns

Eon(1) Turn-on switching energy - 1800 - μJ

td(off) Turn-off delay time - 135 - ns

tf Current fall time - 90 - ns

Eoff (2) Turn-off switching energy - 1090 - µJ

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 50 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 30. Diode reverserecovery waveform)

- 92 - ns

Qrr Reverse recovery charge - 673 - nC

Irrm Reverse recovery current - 20.9 - A

dIrr/dtPeak rate of fall of reverserecovery current during tb

- 675 - A/µs

Err Reverse recovery energy - 138 - µJ

trr Reverse recovery timeIF = 50 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs,

TJ = 175 °C

(see Figure 30. Diode reverserecovery waveform)

- 209 - ns

Qrr Reverse recovery charge - 3500 - nC

Irrm Reverse recovery current - 45.8 - A

dIrr/dtPeak rate of fall of reverserecovery current during tb

- 600 - A/µs

Err Reverse recovery energy - 841 - µJ

STGWA50H65DFB2Electrical characteristics

DS13185 - Rev 1 page 4/15

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG041220191034PDT

250

200

150

100

50

025 75 125 175

PTOT (W) ≥ ≤

TC (°C)

Figure 2. Collector current vs case temperature

GADG041220191035CCT

80

60

40

20

025 75 125 175

IC (A)

TC (°C)

VGE ≥ 15 V, TJ ≤ 175 °C

Figure 3. Output characteristics (TJ = 25 °C)

GADG041220191035OC25

125

100

75

50

25

00 1 2 3 4 5

IC (A)

VCE (V)

VGE = 9 V

VGE = 7 V

VGE = 11 VVGE = 13 V

VGE = 15 V

Figure 4. Output characteristics (TJ = 175 °C)

GADG041220191036OC175

125

100

75

50

25

00 1 2 3 4 5

IC (A)

VCE (V)

VGE = 9 V

VGE = 7 V

VGE = 11 VVGE = 13 V

VGE = 15 V

Figure 5. VCE(sat) vs junction temperature

GADG041220191036VCET

2.6

2.3

2.0

1.7

1.4

1.1

0.8-50 0 50 100 150

VCE(SAT) (V)

TJ (°C)

IC = 25 A

IC = 50 A

IC = 100 A

VGE = 15 V

Figure 6. VCE(sat) vs collector current

GADG041220191037VCEC

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.40 25 50 75 100 125

VCE(SAT) (V)

IC (A)

VGE = 15 V

TJ = 25 °C

TJ = -40 °C

TJ = 175 °C

STGWA50H65DFB2Electrical characteristics (curves)

DS13185 - Rev 1 page 5/15

Figure 7. Collector current vs switching frequency

GADG051220191302CCS

80

60

40

20

010 0 10 1 10 2

IC (A)

f (kHz)

Rectangular current shape(duty cycle = 0.5, VCC = 400 V,RG = 4.7 Ω, VGE = 0/15 V , Tj = 175 °C

TC = 80 °C

TC = 100 °C

Figure 8. Forward bias safe operating area

IGBT061220191241FSOA

10 2

10 1

10 0 10 0 10 1 10 2

IC (A)

VCE (V)

tp = 1 µs

tp = 10 µs

tp = 100 µs

tp = 1 msSingle pulse, TC = 25 °C,TJ ≤ 175 °C, VGE = 15 V

Figure 9. Transfer characteristics

GADG041220191038TCH

125

100

75

50

25

04 6 8 10

IC (A)

VGE (V)

Tj = 175 °C

Tj = 25 °C

VCE = 6 V

Figure 10. Diode VF vs forward current

IGBT230216EWF6GDVF

2.3

2.0

1.7

1.4

1.1

0.820 30 40 50 60 70 80

VF (V)

IF (A)

TJ = -40 °C

TJ = 25 °C

TJ = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

GADG300120191024NVGE

1.1

1.0

0.9

0.8

0.7

0.6-50 0 50 100 150

VGE(th) (norm.)

TJ (°C)

VCE = VGEIC = 1 mA

Figure 12. Normalized V(BR)CES vs junction temperature

GADG300120191024NVBR

1.08

1.04

1.00

0.96

0.92-50 0 50 100 150

V(BR)CES (norm.)

TJ (°C)

IC = 1 mA

STGWA50H65DFB2Electrical characteristics (curves)

DS13185 - Rev 1 page 6/15

Figure 13. Capacitance variations

GADG041220191039CVR

10 3

10 2

10 1 10 -1 10 0 10 1 10 2

C (pF)

VCE (V)

Cies

Coesf = 1 MHz

Cres

Figure 14. Gate charge vs gate-emitter voltage

GADG091220190907GCGE

15

12

9

6

3

00 40 80 120 160

VGE (V)

Qg (nC)

VCC = 520 V, IC = 50 A, IG = 12 mA

Figure 15. Switching energy vs collector current

GADG051220191256SLC

6

5

4

3

2

1

00 20 40 60 80 100

E (mJ)

IC (A)

Etot

Eoff

VCC = 400 V, RG = 4.7 Ω, VGE = 15 V, TJ=175 ℃

Eon

Figure 16. Switching energy vs temperature

GADG051220191257SLT

2.5

2.0

1.5

1.0

0.5

0.00 50 100 150

E (mJ)

Etot

Eoff

VCC = 400 V, VGE = 15 V, IC = 50 A, RG =4.7 Ω

Eon

TJ (°C)

Figure 17. Switching energy vs collector emitter voltage

GADG051220191258SLV

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5150 250 350 450

E (mJ)

VCE (V)

Etot

Eoff

Eon

VCC = 400 V, VGE = 15 V, IC = 50 A, TJ = 175 °C

RG = 4.7 Ω, VGE = 15 V, IC = 50 A, TJ = 175 °C

Figure 18. Switching energy vs gate resistance

GADG051220191258SLG

4

3

2

1

00 10 20 30 40

E (mJ)

RG (Ω)

Etot

Eoff

Eon

VCC = 400 V, VGE = 15 V, IC = 50 A, TJ = 175 °C

STGWA50H65DFB2Electrical characteristics (curves)

DS13185 - Rev 1 page 7/15

Figure 19. Switching times vs collector current

IGBT061220191050STC

10 2

10 1

10 0 0 20 40 60 80 100

t (ns)

IC (A)

tr

td(off)

tf

td(on)

Figure 20. Switching times vs gate resistance

GADG051220191259STR

10 2

10 1

10 0 0 10 20 30 40

t (ns)

RG (Ω)

tf

tr

td(off)

td(on)

Figure 21. Reverse recovery current vs diode currentslope

GADG051220191300RRC

55

50

45

40

35

30

25

200 500 1000 1500 2000 2500 3000

Irrm (A) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C

di/dt(A/μs)

Figure 22. Reverse recovery time vs diode current slope

GADG051220191300RRT

240

220

200

1800 500 1000 1500 2000 2500 3000

trr (ns) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C

di/dt(A/µs)

Figure 23. Reverse recovery charge vs diode currentslope

GADG051220191301RRQ

4.0

3.5

3.0

2.5

2.00 500 1000 1500 2000 2500 3000 di/dt(A/µs)

Qrr(μC) VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C

Figure 24. Reverse recovery energy vs diode currentslope

GADG051220191301RRE

1.0

0.8

0.6

0.4

0.20 500 1000 1500 2000 2500 3000

Err (mJ)

di/dt(A/µs)

VCC = 400 V, VGE = 15 V, IF = 50 A, TJ = 175 °C

STGWA50H65DFB2Electrical characteristics (curves)

DS13185 - Rev 1 page 8/15

Figure 25. Thermal impedance for IGBT

10 10 10 10 10 tp(s)-5 -4 -3-2 -1

10-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cδ=tp/t

tp

t

Single pulse

δ=0.5

ZthTO2T_B

Figure 26. Thermal impedance for diode

STGWA50H65DFB2Electrical characteristics (curves)

DS13185 - Rev 1 page 9/15

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF1000

µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

GADG160420181048IG

RL

VCC

D.U.T.100 Ω IG = CONSTVi ≤ VGMAX

2200 μF

2.7 kΩ

PW 1 kΩ

47 kΩ

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)ton

tr(Ion)

td(off)

toff

tf

tr(Voff)tcross

90%

10%

Figure 30. Diode reverse recovery waveform

t

GADG180720171418SA

10%

VRRM

dv/dt

di/dt

IRRM

IFtrr

ts tf

Qrr

IRRM

STGWA50H65DFB2Test circuits

DS13185 - Rev 1 page 10/15

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-247 long leads package information

Figure 31. TO-247 long leads package outline

8463846_2_F

STGWA50H65DFB2Package information

DS13185 - Rev 1 page 11/15

https://www.st.com/ecopackhttp://www.st.com

Table 7. TO-247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16 1.26

b2 3.25

b3 2.25

c 0.59 0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1 4.30

P 3.50 3.60 3.70

Q 5.60 6.00

S 6.05 6.15 6.25

STGWA50H65DFB2TO-247 long leads package information

DS13185 - Rev 1 page 12/15

Revision history

Table 8. Document revision history

Date Version Changes

09-Dec-2019 1 First release.

STGWA50H65DFB2

DS13185 - Rev 1 page 13/15

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

STGWA50H65DFB2Contents

DS13185 - Rev 1 page 14/15

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2019 STMicroelectronics – All rights reserved

STGWA50H65DFB2

DS13185 - Rev 1 page 15/15

http://www.st.com/trademarks

FeaturesApplicationsDescription1 Electrical ratings2 Electrical characteristics2.1 Electrical characteristics (curves)

3 Test circuits4 Package information4.1 TO-247 long leads package information

Revision history