design and characterization of high-power (s>250kva) sic
TRANSCRIPT
𝐼𝑑𝑐
𝐼𝑑𝑐 𝐼𝑑𝑐3. 𝐼𝑑𝑐
Luis Gabriel, ALVES RODRIGUES 1,2, Jérémy MARTIN 1, Jean-Paul FERRIEUX 21 CEA/LITEN/Department of Solar Technologies/Photovoltaic Systems Laboratory, France.
2 Université Grenoble Alpes, CNRS, Grenoble INP, G2Elab, Grenoble, France
Introduction
CSI Power Module Design [1]
References
Conclusion and Perspectives
•
•
Electric Model
Electric Simulation
SpecificationsArrangement and connection of semiconductor dies
Housing, packaging technology and external connections
Choice of materials and assembly
Electromagnetic Simulation (FEM)
Evaluation of Results
𝑍 = 𝑍 𝑓 =
𝑧11 ⋯ 𝑧1𝑚⋮ ⋱ ⋮
𝑧1𝑚 ⋯ 𝑧𝑛𝑚
•
•
•
•
•
•
𝑳𝒂𝒚𝒐𝒖𝒕 𝑳𝒄𝒆𝒍𝒍𝟏 (𝒏𝑯) 𝑳𝒄𝒆𝒍𝒍𝟐 (𝒏𝑯)
Layout 1
Unbalanced
Measure
Simul.
Layout 4
Balanced
Measure
Simul.
•
•
•
@𝑅𝑔 = 3Ω, 𝑉𝑑𝑠 = 500𝑉, 𝐼𝑑 = 30𝐴, MOSFET - C2M0040170D,
Diode - CPW51700Z050B
•
• 11𝑚𝑚
•
2
𝑺𝒘𝒊𝒕𝒄𝒉𝒊𝒏𝒈 𝑪𝒆𝒍𝒍 𝑯𝒊𝒈𝒉 − 𝒔𝒊𝒅𝒆 𝑳𝒐𝒘 − 𝒔𝒊𝒅𝒆
𝐿1−2
𝐿1−3
𝐿2−3
•
1
3
•
•
Switching Losses Measurement
Switching Characterization - 𝑬𝒔𝒘 (𝑽𝒅𝒔, 𝑻𝒋, 𝑹𝒈)
• •
• 𝑇𝑗
•
•
•
•
•
•
Current Measurement Techniques [3]
•
•
•
• •
- 𝑅𝑠ℎ𝑢𝑛𝑡 = 0,0997 Ω- 𝐵𝑊 = 1,2 𝐺𝐻𝑧
•
•
70 𝑘𝐻𝑧 < 𝐵𝑊 < 400 𝑀𝐻𝑧
•
Turn-on switching waveforms @ 𝑉𝑑𝑠 = 800𝑉, 𝐼𝑑 = 250𝐴, 1,7 𝑘𝑉 SiC Module CAS300M17BM2
• •
•
••
•
•
Switching waveforms @ 𝑉𝑑𝑠 = 1000𝑉, 𝐼𝑑 = 50𝐴, Rgon = 2,5, 𝑅𝑔𝑜𝑓𝑓 = 1,4 and 𝑇𝑗 = 150°𝐶
• •
•
𝑉𝑑𝑠𝑀𝐴𝑋 𝐼𝑑 (𝐴) 𝑅𝐷𝑆(𝑜𝑛) (𝑚Ω) 𝑅𝑔 𝑖𝑛𝑡 (Ω) 𝐶𝑖𝑠𝑠(𝑝𝐹) 𝐶𝑜𝑠𝑠(𝑝𝐹) 𝐶𝑟𝑠𝑠(𝑝𝐹) 𝑄𝑔 (𝑛𝐶)
1700 48 90 1,3 3672 171 6,7 188
1700 58 85 14,9 3606 127 34 198
• 𝐸𝑠𝑤
•
𝐸𝑠𝑤
𝐸𝑠𝑤 𝑅𝑔 𝐶𝑟𝑠𝑠
Table 1 – MOSFET parameters for Manufacturers 1 and 2.
𝑑𝑣
𝑑𝑡𝑚𝑎𝑥= 120𝑘𝑉/µ𝑠
𝑑𝑖
𝑑𝑡𝑚𝑎𝑥= 16 𝑘𝐴/µ𝑠
[1] Alves Rodrigues, Luis Gabriel et al. “Switching Cell Design Optimization of SiC-based Power Modules
for Current Source Inverter Applications” - EPE 2017.
[2] Brandelero, J. C. “Conception et réalisation d'un convertisseur multicellulaire DC/DC isolé pour
application aéronautique” PhD Thesis, Toulouse (2015).
[3] Alves Rodrigues, Luis Gabriel et al. “Characterization of 1.7 kV SiC MOSFET Modules for
Medium/High Power Current Source Inverter in Photovoltaic Applications” – PCIM 2017.
[4] SCHON, Klaus. High impulse voltage and current measurement techniques. Springer, Berlin, 2013.
•
•
•
Contact: [email protected] / [email protected]
Design and characterization of high-power (S>250kVA) SiC-based
current source inverter for photovoltaic applications