design-for-testability techniques for 3d icstechniques for
TRANSCRIPT
DesignDesign--forfor--TestabilityTestabilityDesignDesign forfor Testability Testability Techniques for 3D ICsTechniques for 3D ICsTechniques for 3D ICsTechniques for 3D ICs
Jin-Fu Li f l i l i iDepartment of Electrical Engineering
National Central UniversityJhongli, Taiwan
Outline
Introduction3D Integration Technology Using TSV3D IC T t Ch ll3D IC Test ChallengesDesign-for-Testability Techniques for 3D g y qICsTest Interfaces for 3D ICsTest Interfaces for 3D ICsConclusion
Advanced Reliable Systems (ARES) Lab.EE, National Central University
2
IntroductionIntegrating more and more transistors in a single chip to support more and more powerful p pp pfunctionality is a trend
Using 2D integration technology to implement such g g gy pcomplex chips is more and more expensive and difficult
Some alternative technologies attempting to cope g p g pwith the bottlenecks of 2D integration technology have been proposedp p3D integration technology using through silicon via (TSV) has been acknowledged as one of the via (TSV) has been acknowledged as one of the future chip design technologies
Advanced Reliable Systems (ARES) Lab.EE, National Central University
3
IC Manufacturing
Advanced Reliable Systems (ARES) Lab.EE, National Central University
4
Why 3D IC?Integrating more and more transistors in a single chip to support more and more powerful p pp pfunctionality is a trend
Using 2D integration technology to implement such g g gy pcomplex chips is more and more expensive and difficult
Some alternative technologies attempting to cope g p g pwith the bottlenecks of 2D integration technology have been proposedp p3D integration technology using through silicon via (TSV) has been acknowledged as one of the via (TSV) has been acknowledged as one of the future chip design technologies
Advanced Reliable Systems (ARES) Lab.EE, National Central University
5
3D Integration Technology Using TSV
3D integration technology using TSVMultiple dies are stacked and TSV is used for the interMultiple dies are stacked and TSV is used for the inter-die interconnection
Die 1Die 2
Die 3
TSV
The fabrication flow of a 3D IC Di / f i
TSV
Die/wafer preparationDie/wafer assembly
Advanced Reliable Systems (ARES) Lab.EE, National Central University
6
An Exemplary Via-Last Process
Wafer Seed Layer Deposition
CMOS CMOS
Wafer Thinning TSV Filling
CMOS CMOS
TSV Etching Seed Layer Removal
CMOS CMOS
Advanced Reliable Systems (ARES) Lab.EE, National Central University
7Source: V. F. Pavlidis and E. G. Friedman, “Three-dimensional integrated circuits”.
Die/Wafer Assembly
Bonding technologies for 3D ICsWafer to wafer (W2W) Die to Wafer (D2W) and DieWafer-to-wafer (W2W), Die-to-Wafer (D2W), and Die-to-Die (D2D)
Comparison of different bonding technologiesComparison of different bonding technologies
D2D D2W W2WYieldFl ibilit
HighHi h
HighG d
LowPFlexibility
Production ThroughputHighLow
GoodGood
PoorHigh
Advanced Reliable Systems (ARES) Lab.EE, National Central University
8
3-Tier 3D IC Cross-Section
Advanced Reliable Systems (ARES) Lab.EE, National Central University
9
Source: E. G. Friedman, University of Rochester.
3D SiP & 3D IC
3D SiP3D IC
RF
AnalogFlash
Fl h
Analog
RF
Package
CPU
CPU
SRAM
Flash
Package
1 IO f di d 1 IOs of a die are TSVs1. IOs of a die are pads2. Number of allowed
bonding wires is medium
1. IOs of a die are TSVs2. Number of allowed
TSVs is large
Advanced Reliable Systems (ARES) Lab.EE, National Central University
10
Status of 3D IC R&DThermal
simulationCost-driven
3D EDA toolsClock-treeDesign
Yieldh t
Physical design
Scan design
Clock treesynthesis
DesignAutomation Open-access
3D EDA tools
enhancement design
Testing &DFT
Testaccess Test scheduling
DFT
Fault modelsPre-bond
Wafer/die test
Vertical Vias
Aligning,StackingManufacturing
Vertical Vias
Nearly mature Research initiated;Some tools and/or
No solution available;Research needed
Advanced Reliable Systems (ARES) Lab.EE, National Central University
11Source: H.-H. S. Lee & K. Chakrabarty, IEEE D&T, 2009
Techniques avaialbe
Test Flows of 2D & 3D ICs
Wafer Fab. 1 Wafer Fab. 2 Wafer Fab. n
3D-IC Test Flow2D-IC Test Flow
Wafer Fab.
KGD Test 1 KGD Test 2 KGD Test nWafer Test
Stacking 1+2
KGS Test 1+2
Stacking (1+2)+3Incremental
Test
KGS Test (1+2)+3Assembly & Packaging
Assembly & Packaging
KGD: Known-Good Die Test
Final Test
Advanced Reliable Systems (ARES) Lab.EE, National Central University
12
Source: Dr. Erik Jan MarinissenFinal TestKGS: Known-Good Stack Test
Test Challenges for 3D ICs
KGD (pre-bond test+burn-in test)W f l l KGD f 3D IC i diffi l Wafer-level KGD for 3D ICs is more difficult than existing KGD approaches for system-in-
k (SiP)package (SiP)KGS
DFT methodology should be able to support the incremental testincremental test
Post-bond test (final test)Test optimization
Test integration & modular testing Advanced Reliable Systems (ARES) Lab.EE, National Central University
est teg at o & odu a test g 13
3D-IC KGDWafer-level burn-in (WLBI)
Package Package Burn-In
WLBI
Advanced Reliable Systems (ARES) Lab.EE, National Central University
14
Source:ITRS 2009WLBI
3D-IC KGDWafer probing is difficult
Pitch of TSVs is much smaller than that of Pitch of TSVs is much smaller than that of probing pins of existing probe cardsTypically, TSV does not have ESD protectionp
Electrical access of TSVs is required S m t t pad h uld b impl m nt dSome test pads should be implemented
Advanced Reliable Systems (ARES) Lab.EE, National Central University
15
Economics of TestCost comparison between executing a top-die KGD test or not
Advanced Reliable Systems (ARES) Lab.EE, National Central University
16
Source: E.-J. Marinissen, et al., ITC 2009
Economics of TestTest cost of 3D ICs w.r.t. different test strategies
Advanced Reliable Systems (ARES) Lab.EE, National Central University
17
Source: D. Velenis, et al., 3D-IC conf. 2009
Outline
Introduction3D I i T h l U i TSV3D Integration Technology Using TSV3D IC Test Challenges3D IC Test ChallengesDesign-for-Testability (DFT) Techniques f 3D ICfor 3D ICsTest Interfaces for 3D ICsConclusion
Advanced Reliable Systems (ARES) Lab.EE, National Central University
18
Possible Defects in TSVs
Insulation oxide lost
Insulation discontinuity
Plating void
Seed layer discontinuity
Advanced Reliable Systems (ARES) Lab.EE, National Central University
19
Pre-Bond Testing of TSVs
An on-chip pre-bond TSV test scheme is d dneeded
To reduce the risk of bonding dies having g girreparable TSV failures and save costsTo distinguish fault-free and faulty TSVs To distinguish fault free and faulty TSVs efficiently so that the redundancy or repair strategy can be implemented with acceptable strategy can be implemented with acceptable overhead
Advanced Reliable Systems (ARES) Lab.EE, National Central University
20
Scan-Based Test for TSVs
Die 2Die 1Die 1 Die 2
FF
Scan-Out
FF
Scan-In
FFScan-In
01
To Logic
FF
FFFromLogic
FF
FF01
FFLogic
FF
Logic
FFFF01
Scan
FFFFScan
01
FFScan-Out
Scan wrapper
TSVs in Parallel Connections
Scan wrapper
TSVs in Serial Connections
Advanced Reliable Systems (ARES) Lab.EE, National Central University
21
Via-First TSV
Via-first process
I l tPoly-Si
Metal layer
Insulator
I l t l n+ n+ T
SNMOS Insulator layer (SiO2)
SV
h
Si Substratetox d
Advanced Reliable Systems (ARES) Lab.EE, National Central University
22
Characteristics of Via-First TSVs
Via-first/middle TSVs tend to be fine-pitch (≤ 15 μm) and high density (≥ 103/mm2)μm) and high-density (≥ 103/mm2)They are single-ended components with one end b i d h b k id hi h i ibl buried or on the backside which is not accessible before bondingThey cannot be tested by a scan chain, especially before wafer thinning and back metal patterningUniformity demands that the time constant of parasitic RC of a TSV is bounded p
τL ≤ τTSV ≤ τH
Advanced Reliable Systems (ARES) Lab.EE, National Central University
23
Testing Challenges High density of via-first TSVs (104/mm2)TSV failure rate remains relatively high (> 10ppm)TSV failure rate remains relatively high ( 10ppm)Individual TSVs are indistinguishable in a daisy chain or a serial scan chainchain or a serial scan chain
Difficult to rework once the test is done
They are not applicable before bonding Before bonding and thinning, TSVs have one end floating and buried deeply in the substrate
Advanced Reliable Systems (ARES) Lab.EE, National Central University
24
Possible Defects in TSVs
An open defect in the TSV
Poly-SiMetal layer
NMOS
InsulatorTSVh’n+ n+
Poly Si
Insulator layerNMOS h
Break (Open defect)
Insulator layer (SiO2)
(Open defect)
Si Substrate
Advanced Reliable Systems (ARES) Lab.EE, National Central University
25
Possible Defects in TSVs
A leakage path to ground in the TSV
Poly-SiMetal layer
Insulator
n+ n+
y
TNMOS S
VInsulator layer (SiO2)
Impurity(Resistive defect)
Si SubstrateSi Substrate
Advanced Reliable Systems (ARES) Lab.EE, National Central University
26
A Test Method for TSVsUtilize the RC constant of a TSV
Start
WE = 1: Write 1
TestMode = 1Steps
Write 1: Reset all TSVs to Vdd
R d 1 Di h d i
WE = 1: Write 1SAEN=0: Stop sensing,
WE = 0, SAEN = 1: Period = TL
1
2 Read 1: Discharge and sensing
Short term hold-on WE = 0
, LDischarge and sense2
3 Short term hold on
Read 0: Discharge and sensing
SAEN = 0: Stop sensing
WE = 0, SAEN = 1: Period = TH Discharge and sense
3
4
End TestMode = 0
Discharge and sense
Advanced Reliable Systems (ARES) Lab.EE, National Central University
27
Source: P.-Y. Chen, et al., ATS 2009
Thresholds of TSV Sensing
Specify the range as CL ≤ CTSV ≤ CH
Discharge for T and TDischarge for TL and TH
Sense and amplify in Read-1 and Read-0VX
VDD
Read 1 Read 0DD
CHVth H
Vth_LCL
CTSVth_H
Discharge timeTL TH
Advanced Reliable Systems (ARES) Lab.EE, National Central University
28
Pre-Bond Testing ApproachA test module (TM) includes a write buffer, a pull-down (PD) circuit, and a sense amp (SA)p ( ) p ( )A MUX is used to select between test and normal modesmodes
TSVMTo
To Normal Function CircuitVref TSV
R CTSV
MUX
StorageSA VX = VSensing point
ref
RTSV TSV
SAENTestMode S b t t (V )
WEPDCircuit
Mode
Discharge
Substrate (VSS)
1 / 0
Advanced Reliable Systems (ARES) Lab.EE, National Central University
29
Source: P.-Y. Chen, et al., ATS 2009
Testing Multiple TSVs
Test Controller Result Collector TestOutputs
Test Commands
Test Mode Test Signals Test Address
p
TM FF
TMNormalFunctionCircuit
FF FF TM
…
…
…
…
TM T M d l FF Fli Fl
TM FF
Advanced Reliable Systems (ARES) Lab.EE, National Central University
30
TM: Test Module FF: Flip FlopSource: P.-Y. Chen, et al., ATS 2009
Using Inverter for SensingUse two inverters to “sense and amplify” and a NMOS transistor as the pull down circuitNMOS t a s sto as t e pu do c cu tVth_H and Vth_L merge to one Vth_INV
VX
VDD
Read 1 Read 0DD
CHVth INV
CL
CTSVth_INV
Discharge timeTL TH
Advanced Reliable Systems (ARES) Lab.EE, National Central University
31
Source: P.-Y. Chen, et al., ATS 2009
Test IslandLayer test controller with IEEE 1149.1 TAP
Reusesable scan chain design in pre-bond and post-bond testing
Layer test controllerLayer test controller(LTC)
*Ref: D. L. Lewis, ITC’07
Advanced Reliable Systems (ARES) Lab.EE, National Central University
32
Clock Tree Design for TestUse redundant clock tree for the layer w/o normal clock tree
Wire length and power optimizedPre-bond untestable
Pre-bond testable, area and power wasting
Wire length and power Pre-bond test clock
Wire length and power optimized
Pre-bond testable
Advanced Reliable Systems (ARES) Lab.EE, National Central University
33*Ref: D. L. Lewis, ITC’07
Partial Circuit TestingBit-split Kogge-Stone adder
Add scan registers at the TSV edgeai bi
4567 0123
an
op
pigigi-1
pi-1gi-2p
TSV
ci 1
sc flo
ci
pi-2gi-n/2
pi-n/2
i-1
si
1357 0246 13573D bit-split
designg
Advanced Reliable Systems (ARES) Lab.EE, National Central University
34*Ref: D. L. Lewis, ISVLSI’09
Partial Circuit TestingPort-split register file
Test patterns are reducedSet test pattern on
one write port
Enable write port and all read portsp
Check read data write dataread data = write dataread port
Traditional Traditional test algorithm write port
Advanced Reliable Systems (ARES) Lab.EE, National Central University
35
*Ref: D. L. Lewis, ISVLSI’09
Post-Pond TSV Testing
core
TSV array
TSV array arrayarray
core core
Die 1 Die 2
Advanced Reliable Systems (ARES) Lab.EE, National Central University
36
Post-Pond TSV Testing
die1 die2 die3die1 die2 die3
WSI
WSCWSO
Advanced Reliable Systems (ARES) Lab.EE, National Central University
37
Outline
Introduction3D I i T h l U i TSV3D Integration Technology Using TSV3D IC Test Challenges3D IC Test ChallengesDesign-for-Testability (DFT) Techniques f 3D Ifor 3D IcsTest Interfaces for 3D ICsConclusion
Advanced Reliable Systems (ARES) Lab.EE, National Central University
38
Test Interface for 3D ICs
IntroductionReview of IEEE Std. 1149.1, 1500, and 1149.7 E t i f C t T t St d d f 3D Extensions of Current Test Standards for 3D ICs
Advanced Reliable Systems (ARES) Lab.EE, National Central University
39
Introduction
3D integration using through silicon via (TSV) is a promising IC design technology(TSV) is a promising IC design technology
Heterogeneous integration, high performance, low power, …
One of the challenges of 3D ICsgTesting
St d di d t t i t f (i t t Standardized test interface (i.e., test access architecture) is needed
Test reuse
Advanced Reliable Systems (ARES) Lab.EE, National Central University
40
IEEE 1149.1 & 1500 for SOCsSystem-on-Board System-on-Chip
1500
1149.1
System-on-Chipy p
Advanced Reliable Systems (ARES) Lab.EE, National Central University
41
IEEE 1149.1 (JTAG)
Advanced Reliable Systems (ARES) Lab.EE, National Central University
42
State Diagram of the TAP Controller
Load InstructionTest Application
Advanced Reliable Systems (ARES) Lab.EE, National Central University
43
Serial Board/MCM Scan
Advanced Reliable Systems (ARES) Lab.EE, National Central University
44
Parallel Board/MCM Scan
Advanced Reliable Systems (ARES) Lab.EE, National Central University
45
Independent Board/MCM Scan
Advanced Reliable Systems (ARES) Lab.EE, National Central University
46
IEEE 1500 Test Wrapper
Test stimuli Test responseWPI WPOCore
WB
R
WB
R
Functional Functional
Test response WPI WPO
WBY
data data
WBY
WIR WSOWSI
WSC
Advanced Reliable Systems (ARES) Lab.EE, National Central University
47
Wrapper Interface Ports
WrapperParallel Control
Optional WrapperParallel Port (WPP)
User Defined Portfor Test Flexibility
WPCWrapperParallel Input
WrapperParallel Output
Parallel Control
WPI WPO
Core
WrapperWSI WSOWrapper
Serial InputWrapper
Serial OutputWSCWrapper
Serial ControlStandardized Portfor Plug & Play
Required WrapperSerial Port (WSP)
Advanced Reliable Systems (ARES) Lab.EE, National Central University
48
for Plug & PlaySerial Port (WSP)
Wrapper Serial Control (WSC)
WRSTWCLKWSC
Wrapper
CoreWCLK
SelectWRCapture
Shift
WSCControls& Clock
ShiftUpdate
Transfer
Advanced Reliable Systems (ARES) Lab.EE, National Central University
49
IEEE 1149.7
1149.1 Core1149.7 AdAdapter
Advanced Reliable Systems (ARES) Lab.EE, National Central University
50
IEEE 1149.7 Classes
T5Scan+Data Channels with two or four pins, custom protocols
T4Scan with two/four pins in Star-2 Scan Topology
AdvancedCapability
p p gyT3
Star-4 Scan TopologiesT2T2
Chip bypass in a Series Scan TopologyT1
ExtendedCapability
Basic TAP.7 control, functionality extensions
T0IEEE 1149.1 Specified Behavior with
LegacyC bilit p
multiple on-chip TAP.1sCapability
Advanced Reliable Systems (ARES) Lab.EE, National Central University
51
IEEE 1149.7 Star-4 Configuration
TAP 1
TCK TMS TDI TDOParallel TDI/TDO
TAP 2TCK TCKTMS TMS
TDITDO
TDITDO
TCK TMS TDI TDO
TAP 3
Advanced Reliable Systems (ARES) Lab.EE, National Central University
52
IEEE 1149.7 Star-2 Configuration
TAP 1
TCK TMS TDI TDOMultiplexed
TMS/TDI/TDO
TAP 2TCK TCK
TMS TDITMSTDO
TCK TMS TDI TDO
TAP 3
Advanced Reliable Systems (ARES) Lab.EE, National Central University
53
IEEE 1149.7 Class T5 ─ An Example
TAP 1
TAP 2TCKTMSTMS
Custom-InCustom-Out
TAP 3TAP 3
Advanced Reliable Systems (ARES) Lab.EE, National Central University
54
Test Interface for 3D ICsStandardized test interface (test access architecture) for 3D IC is neededo 3 C s eeded
Data and control bandwidthTest standard
Test Interface
ANALOG
Test standardHardware
Test Interface
FLASH
Test Interface
Software Purpose
Test Interface
Test Interface
CPU
SRAMp
Test reuse
Test Interface
CPU
Advanced Reliable Systems (ARES) Lab.EE, National Central University
55
Data and Control Bandwidth
Die 1
1149.1 Switch
Die 1
Die 2
1149.1 Switch
Die 3
1149.1 Switch
TDI TDOTMS TCK TAM
Advanced Reliable Systems (ARES) Lab.EE, National Central University
56
Current 2D Method for SOB
Chip/Die Chip/Die Chip/Die
TAP TAP TAP
1149 1
TDOTDI TMS TCK
1149.1
Hardware
BSDLSoftware
Advanced Reliable Systems (ARES) Lab.EE, National Central University
57
BSDLSoftware
Current 2D Method for SOCs
Source: E. J. Marinissen, et al., VTS 2010
1149 1 15001149.1 1500
Hardware
BSDL CTLSoftware
Advanced Reliable Systems (ARES) Lab.EE, National Central University
58
BSDL CTLSoftware
Test Flows of 2D & 3D ICs
Wafer Fab. 1 Wafer Fab. 2 Wafer Fab. n
3D-IC Test Flow2D-IC Test Flow
Wafer Fab.
KGD Test 1 KGD Test 2 KGD Test nWafer Test
Stacking 1+2
KGS Test 1+2
Stacking (1+2)+3Incremental
Test
KGS Test (1+2)+3Assembly & Packaging
Assembly & Packaging
KGD: Known-Good Die Test
Final Test
Advanced Reliable Systems (ARES) Lab.EE, National Central University
59
Source: Dr. Erik Jan MarinissenFinal TestKGS: Known-Good Stack Test
Standardized Test Interface for 3D ICs Requirements
Support pre-bond (KGD), KGS, and post-bond testingSupport pre bond (KGD), KGS, and post bond testingCan handle different DFT circuits
E.g., IEEE std 1500 wrapped cores, logic BIST, memory BIST, g , pp , g , y ,etc.
1149.1/1149.7 compliance in chip levelPhysical position of the test interface should be defined
h l f hThe X-Y locations of the test TSVsDescription languages for the test interface….
Advanced Reliable Systems (ARES) Lab.EE, National Central University
60
1149.1 Compliance
Main highlights from 1149.1 standard:Can have only one TAPCan have only one TAPShall have a BYPASS register with a length of exactly one bitbitCan have an optional ID register with a length of exactly 32 bitsyCan have an optional TRST* pin that, when activated, resets all TAP controller logic to the defined “test glogic reset” stateShall have a BSDL file describing the implementation details
[Source: F de Jong and A Biewenga ”SiP TAP: JTAG for SiP” ITC 2006 ]
Advanced Reliable Systems (ARES) Lab.EE, National Central University
61
[Source: F. de Jong and A. Biewenga, SiP-TAP: JTAG for SiP , ITC 2006.]
Die with 1149.1Straightforward daisy-chain connection
TDITDO Die 1
TDITDO Die 2
TSV
TDITDO Die 3
TSV
TDITDO Die 4
TDITDO
Number of BYPASS registers is larger than 1
Advanced Reliable Systems (ARES) Lab.EE, National Central University
62
Number of BYPASS registers is larger than 1
TDI-TDO Connection
Board-level testingIn BYPASS mode the
TDODie 1
In BYPASS mode, the selection signal of muxs is set to 1Die 2
TDI0 1
Only one-bit BYPASS exists between the TDI
TDO
TDI0 1
and TDO of the 3D ICTDO
Die 3
0 1
TDODie 4
TDI0
TDO
TDI0 1
Advanced Reliable Systems (ARES) Lab.EE, National Central University
63
TDO TDI
Physical Location of Test TSVs
Different dies may have different TAM widths Location of TAM should be specifiedLocation of TAM should be specifiedLocation of TAM in each die should be the same
Die 1
Switch
Die 2
S i hSwitch
Advanced Reliable Systems (ARES) Lab.EE, National Central University
64
SOC-Level Test Access Architecture
Advanced Reliable Systems (ARES) Lab.EE, National Central University
65
Source: E. J. Marinissen, et al., VTS 2010
Die-Level Wrapper Proposed by IMEC
WPO WPIs
bypass
Switch
bypass
Scan chain
Switch
WPI WPOs
box
Scan chain
WBR box
WIRWSI
WSO WSIs
WSOsWIR
WSC
WSI WSOs
WSCs
Advanced Reliable Systems (ARES) Lab.EE, National Central University
66
Source: E. J. Marinissen, et al., VTS 2010
Test Access Architecture Proposed by IMECIMEC
bypassWPO
bypassWPO
bypassWPO
Switch b
bypass
bypass
SChain
Switch b
Switch b
bypass
bypass
SChain
Switch b
Switch b
bypass
bypass
SChain
Switch b
WPI
box
SChain
WBR
box
box
SChain
WBRbox
WSO
WPI
box
SChain
WBR
box
WSO
WPIWPI
1
TDO
TMS
TRST
WIR WIRWSC
WSIWIR
WSC
WSI
149.1
TDITCK
TMS
Advanced Reliable Systems (ARES) Lab.EE, National Central University
67
Source: E. J. Marinissen, et al., VTS 2010
Example• ParallelPrebondBypassTurn
bypass
WPO WPIs
Switc
bypass
bypass
SwitcWPI WPOsch box
Scan chain
Scan chain
ch box
WPI WPOs
WBR
WSO WSIs
WIR
WSC
WSI WSOs
WSCs
Advanced Reliable Systems (ARES) Lab.EE, National Central University
68
Source: E. J. Marinissen, DATE 2010
Example
S
bypass
S
WPO
S
bypass
S
WPO
S
bypass
S
WPO
Switch box
bypass
SChain
SChain
Switch box
Switch box
bypass
SChain
SChain
Switch boxWPI
Switch box
bypass
SChain
SChain
Switch boxWPIWPI
TDO
WI
WBR
WI
WBR
WSC
WSI
WSO
WI
WBR
WSC
WSI
WSO1149.1
TDO
TCK
TMSTRST
R RWSC RWSC
1
TDI
SerialPostbond IntestElevatorS i lP tb d I t tT
SerialPostbond BypassTurn
SerialPostbond IntestTurn
Advanced Reliable Systems (ARES) Lab.EE, National Central University
69
Source: E. J. Marinissen, DATE 2010
Conceptual DFT Architecture for 3D ICs
Advanced Reliable Systems (ARES) Lab.EE, National Central University
70
Source: E. J. Marinissen, DATE 2010
TiTi Test Integration Architecture
1500 WCITDITUTDOTU
Slave Die
TDI 1500 WCI
TMS TDOTDI
TDOTDTDITD
Slave Die
…TSV
1500 WCITDITUTDOTU
TDOTDTDITD
Master DieTMS TDOTDI
JTAG/1500 CI TDITTDOT
Advanced Reliable Systems (ARES) Lab.EE, National Central University
71
TMS TDOTDI Source: C.-W. Chou, et al., ATS 2010
JTAG/1500 CI
M‐FSMA WSOMaster Die
Deco
OR
TMSCLK
IEEE 1500
WSO
Selection Register
oder
CLKB WSI
WSC
Bypass Register
Boundary Register
MUX2
MU
TDI
IEEE
WSO
Interface IRUX1
TDO
IEEE 1500
WSIInstruction Register
SwitchTDO
TDIT
TDOT
Advanced Reliable Systems (ARES) Lab.EE, National Central University
72
Source: C.-W. Chou, et al., ATS 2010
M-FSM
Test Logic Reset1 0
1 1 1Run Test/Idle Select-DR
Capture-DR
Select-IR
Capture-IR
0
0
0
0
1 10
Shift-DR
Exit-DR
Shift-IR
Exit-IR
0
0 0
0
1 1
Exit-DR
Pause-DR
Exit-IR
Pause-IR0
00
0
0
1
01 1
1
Exit-DR
Update-DR
Exit-IR
Update-IR
0 0
1 1
0 01 1
Advanced Reliable Systems (ARES) Lab.EE, National Central University
73
Source: C.-W. Chou, et al., ATS 2010
1500 WCI
Slave Die
S‐FSMTMS
AIEEE 1500
WSO
MUX
CLK BWSI
W
MU
TDI
TDO
WSOWSC
BR
IIR
X Decode
SR
TDOTD
TDITD
TDO
TDI Switch
TDOIEEE 1500
WSI
erTDOTU
TDITUTU
Advanced Reliable Systems (ARES) Lab.EE, National Central University
74
Source: C.-W. Chou, et al., ATS 2010
S-FSMTest Logic Reset
R T t/Idl S l t DR
1 01
1
Run Test/Idle Select-DR
Capture-DR
0
0
10
Shift-DR
Update DR
0
01
Update-DR
Capture/Shift-IR0
0
0
1
1
Update-IR
Exit-DR
0 1
1
Exit-DR
0 1
Advanced Reliable Systems (ARES) Lab.EE, National Central University
75
Source: C.-W. Chou, et al., ATS 2010
Overall Test Access Architecture
TAM
_ou
TAM Switch Box
TAM
_inut
TAM Switch BoxTAM Switch Box
15001500
…15001500
…15001500
…TSV TSV
WSO
T
15001500
………
TD15001500
………
TD TD
SO
15001500
………
TSV TSV
TD
JTAG/1500 CI
WSI WSOWSC
TDIT
T TD
OTD
1500 WCI
WSI WSOWSC
TD
OTD
TD
ITU
1500 WCI
WSI WSOWSC
DITU
TTDO
T
TDITD TMS TCKTDI TDO
TDITD
DO
TUTMS TCKTDI TDO
TDO
TU
Advanced Reliable Systems (ARES) Lab.EE, National Central University
76
TMS TCKTDI TDO Source: C.-W. Chou, et al., ATS 2010
Test Operation Flow
Set M‐TiTi IR
Set M‐TiTi & S‐TiTi IIR
S t M t & Sl WIRApply 1149 1 Test Vectors Set Master & Slave 1500 WIRApply 1149.1 Test Vectors
Apply Test Vectors
3D IC TestBoard Level
Test
Capture responses & Analysis
Advanced Reliable Systems (ARES) Lab.EE, National Central University
77
How to Deal with RAM Dies?
Advanced Reliable Systems (ARES) Lab.EE, National Central University
78
DFT Technique for 3D DRAMs
BISTRAM
Normal ……
BISTRAM
TSVs
… … DFTTSVsCollar
BIST_CTR
Collar
…
Source: G. H. Loh, ISCA 2008 Processor
Advanced Reliable Systems (ARES) Lab.EE, National Central University
79
TiTi Extension for Controlling MBIST/MBISR
MBCITDITU
TDOTU
Slave Die
TDOTDITD
TDITDO
Slave DieTMS TDOTDI
TDOTD
MBCI
TMS TDOTDI
TDITUTDOTU
TDOTD
TDITD
TDITUTDOTU
Slave Die
TMS TDOTDI
…TSV
1500 WCI
TMS TDOTDI
TDITUTDOTU
TDOTD
TDITD
JTAG/1500 CI TDITTDOT
Master Die
Advanced Reliable Systems (ARES) Lab.EE, National Central University
80TMS TDOTDI
TTDOT
MBIST/MBISR Control Interface (MBCI)
Slave Die
S-FSMTMS D
ec.
csi_encso
MBCI
MU
X
TCK
MU
X
mor
y
/BIS
R
TDO
BR
IIR
X
SR
Mem
BIS
T/
unrepStatus
MonitorTDOTU
TDOTD
TDITD
cmd_done
TDI
SwitchBox
csiTDITU
TU
TDI
Advanced Reliable Systems (ARES) Lab.EE, National Central University
81
Conceptual Test Interface for 3D ICs Using 1149 7 1149 1 and 1500Using 1149.7, 1149.1, and 1500
X-Y Location of Test TSVs Physical Information
1149.1 1500Hardware 1149.7TMS
S ft
TCK
BSDL CTLSoftware HSDL
Why IEEE 1149.7y1. Low pin/TSV cost2. Solve the “multiple TAPs” per chip problem
Advanced Reliable Systems (ARES) Lab.EE, National Central University
82
3. Can provide high bandwidth
Summary: Standardized Test Interface
Requirements of standardized test interface for 3D ICs3D ICs
Support the test access in the phases of the pre-bond (KGD) test KGS test and post bond test (KGD) test, KGS test, and post-bond test X-Y location of test TSVs1149 1/1149 7 Compliance 1149.1/1149.7 Compliance Description languages for all levels of test interfacesPortable test ectors Portable test vectors Support the test access of memory BIST of 3D RAMsC t l th it hi b t KGD d d t k d Control the switching between KGD pads and stacked TSVs
Advanced Reliable Systems (ARES) Lab.EE, National Central University
83
…
Conclusion
3D integration technology using TSV is one of f IC d i h l ifuture IC design technologiesIt can offer many advantages over the 2D integration technologyHowever, there are some challenges should be , govercome before volume-production of TSV-based 3D IC becomes possiblepTest challenge is one big challenge
Effective test techniques must be developedEffective test techniques must be developed
Advanced Reliable Systems (ARES) Lab.EE, National Central University
84