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Detection of Light XI. Bolometers – Principle XII. Bolometers – Response 17-3-2015 Detection of Light – Bernhard Brandl 1

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Detection of Light

XI. Bolometers – Principle XII. Bolometers – Response

17-3-2015 Detection of Light – Bernhard Brandl 1

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Two Fundamental Principles of Detection

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Photons

Waves

Respond to electrical field strength and preserve phase

Respond to individual photon energy

Two Types of Direct Detection

Based on photoelectric effect (release of bound charges)

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Thermalize photon energy

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Bolometer Beginnings

17-3-2015 Detection of Light – Bernhard Brandl 6 The night sky has a large thermal emission at 10 microns SOLUTION: rapid beam switching to remove the sky background

The father of astronomical bolometers is Frank Low. He invented the Ge:Ga bolometer in 1961.

Frank Low (1933 – 2009)

A milestone in the History of Bolometers

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Many references to John C. Mather (Applied Optics 21, 1125, 1982):

The Nobel prize in Physics 2006 (with George Smoot) PI for Far Infra Red Absolute Spectrophotometer (FIRAS) on COBE

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Basic Principle

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The incoming photon energy Eγ = hc/λ is absorbed as heat and increases the temperature of the absorber.

Steady State Operation of a Bolometer (1)

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Heat sink

Bolometer

Thermal link

• Incoming photon power flux increases bolometer from equilibrium temperature to .

Steady State Operation of a Bolometer (2)

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Heat sink

Bolometer

Thermal link

• A thermal link with thermal conductance transfers power to a heat sink of temperature

Thermal conductance G [W / K] Thermal heat capacity C [J / K]

Physical Layout of Semiconductor Bolometer (1)

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A chip of doped silicon or germanium acts both as bolometer detector and thermometer.

Physical Layout of Semiconductor Bolometer (2)

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High input impedance amplifier measures the voltage voltage depends on resistance resistance depends on temperature.

Bolometer Readout Circuit

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Johnson noise is NOT the limiting factor for bolometers so we don’t worry about a high resistance R. We can use this circuit to measure the bolometer resistance R (or what we actually measure is Vout.)

We assume that RL >> R so that the current through the bolometer is limited by RL.

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R T for intrinsic Semiconductors

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From previous lectures, we know that the resistance Rd of a seminconductor is:

...where the number of charge carriers is:

So, R depends on the temperature as:

Temperature Coefficient of Resistance

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Bolometer temperature electrical resistance temperature coefficient of resistance α:

A positive/negative temperature coefficient (PTC/NTC) refers to materials that experience an increase/decrease in electrical resistance when their temperature is raised.

The sign of α leads to very different behavior for a bolometer.

( in units of Kelvin–1)

http://www.resistorguide.com/temperature-coefficient-of-resistance/

Material α/°K Silicon -0.075 Germanium -0.048 Carbon -0.0005 Manganin 0.000002 Constantan 0.000008 Nichrome 0.0004 Mercury 0.0009 Copper 0.0039 Aluminum 0.0039 Tungsten 0.0045 Iron 0.005 Lithium 0.006

Low Temperatures = good Resistivity

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Bolometers suffer from the same fundamental noise mechanisms as photoconductors PLUS the noise arising from thermal fluctuations.

Keep temperature of the bolometer very low:

To make sure that there are good electrical properties for this very low temperature, the doping is so heavy that hopping is made to be the dominant mode.

Approximations for α

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If T << Δ, and the semiconductor is heavily doped, the electrical resistance for hopping can be described by:

where ϵ ≈ ½ and Δ ≈ 4 – 10 K is a characteristic temperature.

Substituting the hopping resistance into the above equation yields:

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Response of a Bolometer

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Add an astronomical source represented as a time varying component with power:

Heat sink

Bolometer

Thermal link

where is the quantum efficiency, and is the thermal energy. Thermal conductance G [W / K]

Thermal heat capacity C [J / K] T-coefficient of resistance α [1 / K]

Bolometer Thermal Time Constant (1)

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The total power absorbed by the detector is:

Now we turn on a signal so that:

The signal changes exponentially with time constant τT = C/G

Bolometer Thermal Time Constant (2)

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The signal changes exponentially with time constant τT = C/G

For t >> τT, the temperature T1 ~ (P0 + ηP1) If you measure the temperature then you know the power.

Two Sources of Bolometer Heating

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1. Incoming (detected) photon flux produces PV(t):

2. Electrical heating from the current sensing in the thermometer PI:

Two Sources = Two Time Constants

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1. Heat flowing out of the bolometer through the thermal link gives

rise to

2. The electrical power changes with an electrical time

constant

Since α(T) < 0, this term is always positive:

<

Frequency Response

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The frequency response of a classical RC-circuit is given by (Rieke 1.38):

( )( )[ ] 2/12

0

21 RC

outf

vfVτπ+

=

where S(0) is the low frequency responsivity [V / W].

Similarly, the frequency response of a bolometer is given by:

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Electrical Responsivity

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Let dR, dT and dV be the changes in resistance, temperature and voltage across the bolometer, caused by the absorbed power dP.

with Rieke p.244

So, we get for the electrical responsivity:

SE is completely determined by the electrical properties of the detector.

Measuring Electrical Responsivity

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The detector properties G and α are not always known need to determine them by measurement.

Measure the “load curve” of I-V by adjusting the load resistor RL

Note that the local slope is different from “the resistance” R because of the non-linearity of the load curve.

Nominal operating point

The Load Curve

Detector Responsivity Electrical Responsivity

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is the electrical responsivity, but now we can derive the responsivity to incoming radiation (where only a fraction of the incoming energy is absorbed):

Responsivity compared to Photodetectors

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Photoconductor:

Photodiode:

Bolometer:

The bolometer responsivity is independent of the wavelength λ (assuming the QE η is independent of λ).

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Negative electro-thermal Feedback

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Johnson noise can be characterized by the noise voltage

CASE 1: if VJ is added to the bias voltage, the dissipated power P increases and R decreases (because of the negative resistance coefficient) so the voltage across the detector decreases.

CASE 2: if VJ opposes the bias voltage, the dissipated power P decreases and R increases, so the net voltage across the detector still decreases.

In both cases, the detector response opposes the ohmic voltage change resulting from Johnson noise negative electro-thermal feedback.

The total NEP

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Johnson noise: ....due to fluctuations in the thermal motions of charge carriers (random currents due to Brownian motion).

Photon noise: ...due to fluctuations in the photon flux. (Note: Bolometers no not have G-R noise – no particle pairs created/destroyed).

Thermal noise: due to fluctuations of entropy across the thermal link that connects the detector and the heat sink.

Total NPE noise:

Detection of Light – Bernhard Brandl

NEP Performance of Bolometers

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Performance of bolometers for sub-mm detection in terms of diameter and temperature:

(from

Pug

et &

Cor

on 1

994

for t

he S

AMBA

miss

ion)

.

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LABOCA

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The signal photons are absorbed by a thin metal film cooled to about 280 mK. The array consists of 295 channels in 9 concentric hexagons. The array is under-sampled, thus special mapping techniques must be used.

http://www.apex-telescope.org/bolometer/laboca/technical/

LABOCA – the multi-channel bolometer array for APEX operating in the 870 μm (345 GHz) atmospheric window.

Herschel/PACS

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Herschel/PACS bolometer: a cut-out of the 64x32 pixel bolometer array assembly. 4x2 monolithic matrices of 16x16 pixels are tiled together to form the short-wave focal plane array. The 0.3 K multiplexers are bonded to the back of the sub-arrays. Ribbon cables lead to the 3K buffer electronics.

Composite Bolometers

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In some cases, Si bolometers with high impurity concentrations can be very efficient absorbers. In many cases, however, the QE is too low. Quick solution: enhance absorption with black paint – but this will increase the heat capacity.

A high QE bolometer for far-IR and sub-mm would have too much heat capacity hence composite bolometers.

The heat capacity of the blackened sapphire plate is only 2% of that of Ge.

low heat capacity high QE

low QE high heat capacity

Etched Bolometers

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Etching physical designs in Si means that you can make bolometer arrays and really reduce the thermal timescales.