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Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20 th -21 st , 2006 Development and Operation of APPLE Undulators at BESSY

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Page 1: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Development and Operation of APPLE Undulators at BESSY

Page 2: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Outline

Operation of APPLE Undulators at BESSY, Preparing for Top-Up

Plans for New Insertion Devices at the BESSY SR

Developments for FEL-Undulators

Page 3: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Undulators at BESSY

device design operational λ0 / mm periods Gap / mm By / Bz / T

U49-1 Hybrid 1998 - 49,4 83 15 0,799

U49-2 Hybrid 2000 - 49,4 83 15 0,788

U125-1 Hybrid 1998 – 2005 125 31 20 1,162

U125-2 Hybrid QPU 2000 - 125 31 15 1,360

U41 Hybrid 1999 - 41,2 79 15 0,659

U139 Hybrid 2004 - 139 10 15 1,471

UE112 APPLE II 2006 - 112 32 20 0,994 / 0,765

UE56k APPLE II 2003 - 56 1 x 30 16 0,772 / 0,529

UE46 APPLE II 2001 - 46,3 70 16 0,680 / 0,435

UE52 APPLE II 2002 - 52 77 16 0,742 / 0,505

UE49 APPLE II 2003 - 49 63 16 0,709 / 0,477

UE56-1 APPLE II 1999 - 2003 56 2 x 30 16 0,771 / 0,529

UE56-2 APPLE II 1999 - 56 2 x 30 16 0,772 / 0,529

Page 4: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Smooth Operation of BESSY Undulators

Feed forward correction of natural focussing

-30 -20 -10 0 10 20 301040

1045

1050

1055

1060

1065

1070

1075 UE52 gap= 17.0mm

parallel w ithout FFWDparallel w ith FFWDantiparallel w ithout FFWDantiparallel w ith FFWDho

rizon

tal t

une

/ kH

z

horizontal shift /mm15 20 25 30 35 40 45 50

895

900

905

910

915

920

925U125-2

without Feedforward with Feedforward

verti

cal T

une

/ kH

z

Gap / mm

Undulators are coupled to monochromator and are operated under user control

Feed forward correction of residual dipole errors

gap change phase change

Page 5: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

UE56 APPLE II Double Undulator

Upgrade of modulator:Absolute encodersHarmonic drive gear boxesNew motor controllerPneumatic brakes

Rotatable permanent magnets pemit two operation modes:• Chicane mode for fast helicity switching• Modulator mode couples two sections for higher brightness

Page 6: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Polarization Characterization

0 undulator phase π

ellipticalmode

inclinedmode

The BESSY Soft X-ray polarimeterAgreement between theory and measurement

Page 7: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Dynamic Multipoles

second order kicks, no straight line integrals (Elleaume, EPAC 1992):

dzdzyx

BdzBdz

yxBdzB

By

yx

xyx ∫ ∫ ∫ ∫ ∫⎭⎬⎫

⎩⎨⎧

∂⋅+

∂∂

⋅−= '/

''/

')(

12/ ρ

θ

⎪⎭

⎪⎬⎫

⎪⎩

⎪⎨⎧

∂⋅+

∂∂

⋅−=yx

BB

yxBB

BL y

yx

xu

yx //)2()(2

00

00

2

2

2/ πλ

ρθ APPLE, elliptical mode

inclined modegeneric representation of second order kicks:

)(sin)()2/(sin)()2/(cos)()( 22/

220 ϕϕϕθ ππ ⋅+⋅+⋅= xfxfxfxx

-50

0

50

05

1015

2025

-0.4-0.3-0.2-0.1

00.10.20.30.4

x / mmphase / mm

∫By

dz /

Tm

m

-0.4

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

0.4

-50 0 50

x / mm

dyna

mic

fie

ld in

tegr

als

/ Tm

m

-50

0

50

05

1015

2025

-0.06-0.04-0.02

00.020.040.06

x / mmphase / mm

∫By

dz /

Tm

m

elliptical mode inclined mode

f0fπfπ/2

3 genericfunctions

Page 8: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Shimming of Dynamic Multipoles

BESSY UE52

-0.12

-0.1

-0.08

-0.06

-0.04

-0.02

0

0.02

0.04

0.06

0 10 20

shift / mm

dyna

mic

fie

ld it

egra

l / T

mm

-0.12

-0.1

-0.08

-0.06

-0.04

-0.02

0

0.02

0.04

0.06

0 10 20

shift / mm

dyna

mic

fie

ld it

egra

l / T

mm

elliptical mode inclined mode

J. Bahrdt et. al., SRI 2006, Daegu, Korea

afterbefore

shimming J. Chavanne et al., Proceedings of the EPAC 2000, Vienna, Austria,pp 2346-2348

reduced injection efficiency for high beta devices: UE52, UE56/2, UE56kno effect for low beta devices: UE49, UE46

successful shimming of UE52, UE56-2 in siturecovered: dynamic aperture,

injection efficiencylifetime

Page 9: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

APPLE II Undulator UE112

BESSY II BRILLIANCE

10 17

10 18

10 102

103

Photon energy (eV)

Bri

llia

nce

(p

hot

ons/

(sec

mm

2 mra

d2 0

.1%

BW

))

UE112 1.7 GeV

UE112 1.9 GeV

U125-1 PGM-1

U125-1 PGM-2

Full polarization control permits:Compensation of polarizing effectsof beamline components withappropriate undulator setting

Parameters at 1.7 GeV:Circular polarization : 6.5 – 660 eVLinear horizontal polarization : 5 – 660 eVLinear vertical polarization : 8 – 660 eVRotatable (linear) polarization : 12 – 660 eVPeriod length : 12 mmNumber of periods : 32 Minimum magnetic gap : 20mm

Page 10: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

APPLE II Undulator UE112Need for Analytic and Symplectic Tracking

dynamic multipoles of UE112 are one order of magnitude largeras compared to UE52 tracking studies are required

symplectic tracking scheme based on generating function formalismJ. Bahrdt, M. Scheer, G. Wuestefeld, Wiggle 2005, Mini-Workshop, Frascati, 2005J. Bahrdt, G. Wuestefeld, EPAC 2006

advantages: phase space conservationvery fast (several periods in one step)uses analytic field description

application to APPLE Undulators:

representation of main field for variable gap, shift and operation mode in a closed model

representation of Fe-shims (one data set per shift, gap)

Page 11: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Analytic Field Representation of APPLE II

Main fieldscalar potential of four rows

Shim field integralscalar potential of two girders

22

0

0

0

04

03

02

01

14321

)2/cos())(sin())(cos(

)/)()/((

)/)()/((

)/)()/((

)/)()/((

)(

zxiyi

xxi

zz

xixi

xixi

zzyk

xisyixicyiyiyk

i

zzyk

xisyixicyiyiyk

i

zzyk

xisyixicyiyiyk

i

zzyk

xisyixicyiyiyk

i

n

iiiii

kkk

kikzkc

xxksxxkc

cnkeBsBcBkeV

cnkeBsBcBkeV

cnkeBsBcBkeV

cnkeBsBcBkeV

VVVVV

zyi

zyi

zyi

zyi

+=

⋅=±=±=±=

⋅++⋅−=

⋅++⋅−=

⋅++⋅+=

⋅++⋅+=

+++=

±

±

±

−−

−−−

+−

++−

−+

+++

++

−−+

=∑

ψ)(VB ∇−=

r

ykxiyisxiyic

yi

ykxiyisxiyic

yii

n

ii

yi

yi

exkBxkBk

exkBxkBk

V

VV

=

⋅+

+⋅+=

=∑

))sin(~)cos(~(1

))sin(~)cos(~(1~

~~

22

11

1

calculation of Fourier components i=1 to 30 of - a single row (main field)- a single girder (shim field integral)

)~(~ VdxBB ∇−=⋅= ∫r

Page 12: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Accuracy of APPLE Main Field Description

analytical representation (black)simulation with RADIA (red)0

0.5

1

-100 -50 0 50 100z / mm

By

/ Tes

la

y=0mm

-0.5

0

0.5

1

-100 -50 0 50 100z / mm

Bz

/ Tes

la

y=0mm

0

0.5

1

-100 -50 0 50 100z / mm

By

/ Tes

la

y=4mm

-0.5

0

0.5

1

-100 -50 0 50 100z / mm

Bz

/ Tes

la

y=4mm

0

0.5

1

-100 -50 0 50 100z / mm

By

/ Tes

la

y=8mm

-0.5

0

0.5

1

-100 -50 0 50 100z / mm

Bz

/ Tes

la

y=8mm

parametrization of 3D-fieldusing only a few coefficientsprovides a very good field description• for various gaps• various shifts• large vertical offsets

phase=0 phase=π

Page 13: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Accuracy of Shim Description

-0.4

-0.2

0

0.2

0.4

-40 -20 0 20 40z / mm

∫By

/ Tm

m

y=0mm

-0.4

-0.2

0

0.2

0.4

-40 -20 0 20 40z / mm

∫Bz

/ Tm

m

y=0mm

-0.5

0

0.5

-40 -20 0 20 40z / mm

∫By

/ Tm

m y=4mm

-0.5

0

0.5

-40 -20 0 20 40z / mm

∫Bz

/ Tm

m y=4mm

-2

-1

0

1

2

-40 -20 0 20 40z / mm

∫By

/ Tm

m

y=8mm

-2

-1

0

1

2

-40 -20 0 20 40z / mm

∫Bz

/ Tm

m

y=8mm

field integrals of L-Shim

analytical representation (black)simulation with RADIA (red)

L-Shims as proposed byChavanne et al., EPAC 2000

Page 14: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Shim Optimization for UE112, Elliptical Mode

10-5

10-4

10-3

10-2

10-1

1

0 2 4 6 8 10 12 14 16

shim strength

mul

tipo

le s

tren

gth

/ (T

mm

**(2

-ord

er)) phase=λ0/2

-0.04

-0.02

0

0.02

0.04

0.06

0 0.1 0.2 0.3 0.4 0.5

row phase / period length

pow

er /

a.u.

octupole

dodecapole (x3)

quadrupoleoctupoledodecapolehexadecapoleikosapole

black: Dynamic multipolered: negative shim strengthblue: combination of shims

with different lengths

two shim widths:solid: 2mmdashed: 4mm

Page 15: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Tracking Studies for the UE112

1000 turnsamplitudes: 1-30mm hor.1mm vertical

phase space plot

kick in mrad versus transverse position in mm

without shimstrajectories stablefor z < 15mm

with shimstrajectories stablefor z < 30mm

horizontal kick of the electronspassing the UE112red: without L-shimsblue: with 32 L-shims

G. Wüstefeld

Page 16: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Tune Shift vs. Amplitude forDifferent Shim Strengths

Horizontal tune shift vs. hor. amplitude Hor. and vert. tune shift vs. amplitude

0.7

0.8

0.9

1.1

1.2

1.3

0.7

0.8

0.9

1.1

1.2

1.3

minimum tune variation for chosen shim strength (1.0)

Page 17: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

UE112 Final Shimming

Increase of horizontal aperture byshimming the UE112 with L-shims P. Kuske

Amplitude dependent detuning fordifferent shimming iterations – opensymbols indicate beam loss of morethan 2%

Page 18: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Predicted and Measured Dynamic Multipoles

Black : first iterationred / blue: third iteration

prediction (dashed)

measurement(solid)

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

-10 0 10

z / mm

dyna

mic

mul

tipo

les

/ Tes

la m

m elliptical mode

-1.5

-1

-0.5

0

0.5

1

1.5

-10 0 10

z / mmdy

nam

ic m

ulti

pole

s / T

esla

mm inclined mode

first iteration

thirditeration

third iteration

Passive shimming in elliptical mode is sufficientActive shimming in inclined mode is requiredThis will be realized with rotatable permanent magnets

Page 19: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Ideas for the BESSY Storage Ring

New operation modes• Top-up operation within the next year• Energy enhancement from 1.7 GeV to 1.9 GeV

New Insertion DevicesAll straight sections are filled!• Replacement of UE56-1 double undulator with

femto second slicing facility (2004)• Replacement of planar devices with variably polarizing devices

e.g. U125-1 UE112• Smaller period length devices dedicated to special user requirements:

1: elliptically polarizing in-vacuum devicesto cover LII/III edges of Fe, Co, Ni with first harmonicand rare earth MIV/V edges with third harmonic

2: planar SC-undulators for protein crystallography

Page 20: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Comparison of various ID parameters:period lengths: red: 30mm, light blue: 32.5mm, blue: 35mm, green: 37.5mm, magenta: 40mm

solid: out of vacuum, 10mm gap; dashed: in-vacuum, 6mm gap

Design goal:Smallest period compatible withoverlap between 1st and 3rd harmonic

Parameters:Photon energy range : 250eV – 2500eV Polarization : hor. / vert. linear,

ellipticalPeriod length : 30mmNumber of periods : 98Minimum gap : 6mm

Challenges for an APPLE Design:linear bearing in ultra high vacuumdrive system and encoder in UHVCu coated Ni foil for image currents ANKA designflexible taper ALS design

Other options: SC variably polarizing device: NbTI, 4KSC variably polarizing device: Nb3SnSC variably polarizing device: NbTi, 1.8K

elliptical pola

0

1

2

3

4

5

6

7

8

9

10

0 1000 2000 3000

energy / eV

bri

llia

nce

gai

n v

s U

E49

p7

0

1

2

3

4

5

6

7

8

9

10

flu

x ga

in v

s U

E49

p7

UE30

UE30: In-Vacuum Elliptical Undulator

Page 21: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

UE30: In-vacuum Elliptical Undulator

Performance comparable to out-of-vac. APPLE at 2.4 GeV machine

BRILLIANCE

10 18

10 19

500 1000 1500 2000 2500 3000

Photon energy (eV)

Bri

llia

nce

(p

hot

ons/

(sec

mm

2 mra

d2 0

.1%

BW

))

UE30 1.7 GeV 0.2 A

UE30 1.9 GeV 0.2 A

ESRF 6 GeV 0.2 A, ID8

SLS 2.4 GeV 0.35 A, UE44

UE49 1.9 GeV 0.2 A

FLUX

10 14

10 15

500 1000 1500 2000 2500 3000

Photon energy (eV)

Flu

x (p

hot

ons/

(sec

0.1

% B

W))

UE30 1.7 GeV 0.2 A

UE30 1.9 GeV 0.2 A

ESRF 6 GeV 0.2 A, ID8

SLS 2.4 GeV 0.35 A, UE44

UE49 1.9 GeV 0.2 A

Page 22: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

SC-ID for Protein Structure Crystallography

Parameters at 1.9 GeV:SC-wire : NbTi (80%)Usable harmonics : 1, 3, 5, 7Energy range : 2 - 12,65 keVFixed polarization : hor. linearPeriod length : 11,0mmNumber of periods : 100Kmax : 1,2Fixed gap : 4,5mm

Detailed studies required on: Image current heatingThermal load of upstream dipoleReproducibilty, hysteresisScanning capabilities

0

1

2

3

4

5

6

7

8

9

12.58 12.6 12.62 12.64 12.66 12.68 12.7

energy / keVflu

x / 1

012 /

s / 0

.1A

/ 0.

1% B

W /

77µr

ad2

Se

emittance and energy spread included

Width of 7th harmonicpermits MAD-experimentsat min. f‘ and max. f‘‘without undulator scanning

7th

New materials like Nb3Sn material or 1.8K technologymay provide even higher fields in the future

Page 23: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Developments for FEL-Undulatorspartly tested at BESSY SR

• Support and drive system prototypes: UE112, PETRA III APPLE

• Prototype structure for APPLE III, development of shimming strategies

• Mover for transverse alignment of APPLE devices

• Permanent magnet phase adapter

• Mashine protection: beam loss simulationcollimator, radiation monitors (Cherenkov and powermeter)

• Control system for complex facility in analogy to BESSY ID control system

• Industrial aspects of undulator fabrication:support and drive systemmagnet structure

• Software development: Wavefront propagation with PHASE

Page 24: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

New Support and Drive System for the UE112

UE112: 4.2m APPLE structureonly one piece of cast ironbionic optimization

model options for cast iron structures

wooden models: many casts possible, cost effective for series productionpolystrene models: reduced costs for prototype fabricationonly core model: reduced costs for prototype fabrication (new technology)

Page 25: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Al-Magnet Girder

support at four locationsfor bending minimization(realized at BESSY IDsUE49, UE46, UE112)

-100

-80

-60

-40

-20

0

0 0.5 1 1.5 2 2.5 3 3.5 4

distance / m

defl

ecti

on /

a.u.

two supports

four supports

4m single piece

-50

-40

-30

-20

-10

0

10

20

30

40

50

0 0.5 1 1.5 2 2.5 3 3.5 4

distance / m

heig

ht /

µm

upper girder

lower girder

gap variation

fabrication accuracy

residual fluctuations can becompensated with spacers

30µm

Page 26: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Gap Positioning Accuracy

UE49

magnetic fieldmeasurementduring gap drive

50

51

52

53

54

0.62 0.64 0.66 0.68 0.7 0.72 0.74

field / Tesla

redu

ced

gap

/ µm

±1µm

spectra measuredfor different directions of gap drive

Page 27: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Cascaded HGHG FEL

The planned BESSY HGHG FEL facilityconsists of three HGHG lines to cover theenergy range from 24eV to 1000eV

Last radiators and final amplifiers are of the APPLE III type

Page 28: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

The APPLE III Design

last Radiator and final amplifier have a new designAPPLE III design: factor 1.4 higher field as compared to APPLE II

0

0.1

0.2

0.3

0.4

0.5

0.6

5 6 7 8 9 10 11 12

new design, G=3.4mm

new design, G=5.4mm

new design, G=7.4mm

APPLE design, G=10.4mm

phase / mm

fiel

d / T

esla

APPLE III

45° inclination

0° inclination

APPLE II

G

J. Bahrdt et al., Proceedings of the 26th InternationalFEL Conference, Trieste, Italy, 2004, pp610-613 22mm APPLE III prototype under construction

Page 29: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Magnet Block Characterization

Today, block characterization is essential for an effective sortingimproved magnetic material will reduce production cost

-0.06

-0.04

-0.02

0

0.02

0.04

0.06

-50 0 50

z / mm

∫ By

dx /

Tm

mx 100

A-magnet

-8-6-4-202468

-50 0 50

z / mm

∫ By

dx /

Tm

m

x 1000

B-magnetTemperature dominated

automated Helmholtz coil system formeasurement of dipole moment

stretched wire system forcharacterization of inhomogeneities

new measuremenmt setup:reproducibility: A-magnets: 2.0 x 10-4 Tmm

3.0 x 10-4 rel.B-magnets: 1.5 x 10-3 Tmm

2.1 x 10-4 rel.

Page 30: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Field Optimization

-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

1000 1500 2000 2500 3000 3500x / mm

fiel

d in

tegr

al /

T m

m

z = -20mm

z = -10mm

z = 0mm

z = 10mm

z = 20mm

UE49

-1.5

-1

-0.5

0

0.5

1

1.5

-40 -30 -20 -10 0 10 20 30 40z / mm

∫ Bz

dx /

Tm

m

How to meet the FEL-field tolerancesA) single block characterization and initial sorting and in-situ sortingB) virtual shimming, Fe-shimming, end correctors

A) excellent agreement between predicted and measured fields integralsfor BESSY undulators UE52, UE49, UE112

efficient sorting procedure

blue: predictionfrom single block measurementsred: hall probe measurements

longitudinal distribution transverse distribution

UE52

Page 31: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Good Field Region of APPLE IDs

-0.4

-0.2

0

0.2

0.4

0.6

0.8

x 10-3

0 5 10

phase / mm

dB/B

0

HE-FEL

parallel

planar

-0.4

-0.2

0

0.2

0.4

0.6

0.8

x 10-3

0 5 10

phase / mm

dB/B

0

HE-FEL

anti parallel

-0.2

0

0.2

0.4

0.6

0.8

1

1.2

-20 -10 0 10 20x / mm

fiel

d /

Tes

la

HE-FEL-0.2

00.20.40.60.8

11.21.41.6

-20 -10 0 10 20x / mm

fiel

d /

Tes

la

ME-, LE-FEL

tight alignment tolerances in both transverse directions support structureAPPLE III (solid) slightly relaxed as compared to APPLE II (dotted)

blue: vertical fieldred: horizontal fieldsolid: APPLE IIIdashed: APPLE II

0

0.1

0.2

0.3

0.4

0.5

0.6

x 10-3

0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2

z / mm

dB/B

0

horizontal directionmax phasevertical directionplanar undulator

vertical directionmax phase

vertical directionantiparallel

electronbeam

0.1mm off axis

Page 32: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Transverse Alignment Accuracy

tolerance studies on the transversepositioning accuracy forAPPLE III undulator (BESSY HE-FEL)

random transverse displacement of final amplifier undulator modules

simulation of trajectory wander andpower degradation using GENESIS

40µm displacement is acceptable.

A. Meseck, J. Bahrdt, 27th, InternationalFEL Conference, Stanford, Ca, 2005, pp47-50

Page 33: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Natural focussing / defocussing

0

0.025

0.05

0.075

0.1

0.125

0.15

0.175

0.2

0.225

0.25

0 2 4 6 8 10 12 14 16 18 20

distance / m

beam

siz

e / m

m

planar device

APPLE, phase = 0

APPLE, phase = π

horizontal plane

vertical plane

Dynamic quadrupole modifies the electron beam sizedependent on gap and phase position!

adaptive focussing is essential for optimumoverlap of electron beam and photon beam

Compensation with Fe shims has to be tested for APPLE III

HE-FEL

focussing is stronger for the other FELsby a factor of:9 ME-FEL45 LE-FEL

=−

=−

+

⋅+⋅=

+⋅⋅⋅

=

1 22

22222

21

2222

2

!/!/!/!/

)(()(

2

nynxn

xynynxxnxneffx

ynn xneffxx

nBnBnkBnkB

k

BBkkmc

eKγ

Page 34: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Beam Loss Simulations with GEANT

0

2

4

6

8

10

-1000 0 1000

z / mm

loca

l dem

agne

t. /

%

-1.6-1.4-1.2

-1-0.8-0.6-0.4-0.2

0

-2 -1 0 1 2

z / mm

fiel

d re

duct

ion

/ %

1 mrad

0.1 mrad

Model for simulations• 70kGray (red. Dose) for 1% loss of Br• dump 300.000nC into the

vacuum pipe at one location• get doses inside magnet segments• derive local demagnetization• get spectra from modified magnets

0

500

1000

1500

2000

2500

3000

3500

x 10 12

620 640 660 680

energy / eV

brig

htne

ss 1st harmonic

0

500

1000

1500

2000

2500

3000

3500

x 10 12

3220 3240 3260 3280

energy / eV

brig

htne

ss 5th harmonic

-0.25-0.2

-0.15-0.1

-0.050

0.050.1

0.150.2

0.25

-1000 -500 0 500 1000

z / mm

traj

. dif

f. /

Tm

m**

2 1.0 mrad0.1 mrad

-10

-5

0

5

10

15

-1000 0 1000

z / mm

ph

ase

erro

r / d

egre

e

1.0 mrad0.1 mrad

1 mrad 1 mrad

Vacuum tube Magnet

Page 35: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Radiation Monitoring

Cherenkov monitorsTo be used for fast triggerCollaboration with HMI, BerlinFirst experiments at BESSYTime resolution sensitivity

chamber magnetsfibres

Powermeter monitorsTo be used for

absolute dose measurementsCollaboration with Fraunhofer Institut

Euskirchen

Similar systemsare used at FLASH

Page 36: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

HGHG-FEL at MAX-lab (EUROFEL)

LaserElectron beam

Modulator Radiator

Chicane

Modulatorλu = 0.048m

30 periodsλs

Radiatorλu = 0.056m

30 periodsλs/3 - λs/5

Laserλs = 266.66 nmFLAT TOP shape

peak power: 300 MW pulse duration: 300 fs fwhm

Electron beamεnx=εny= 3 mm.mrad

Ipeak= 500 A 100µm (rms) bunch length

Ebeam = 420 MeVrel. e-spread = 0.1%σx= σy = 300 µm

Chicane4x dipol magnets:

length: 0.12 m field: ~0.15 T

separation: distance: 0.4 m

Page 37: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Undulators as delivered by BESSY

Modulator RadiatorBeam height: 500mmPeriod length: 48mm 56mmNumber of periods: 30 30Remanence: 1.15 T 1.15Magnetic gap: 9,5mm 12

Operating position

Page 38: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Wavefront Propagation with PHASE

Self seeding option at FLASH

00.10.20.30.40.50.60.70.80.9

1

0 500 1000 1500 2000

time / fs

pow

er /

a.u. x50

x10x5

00.10.20.30.40.50.60.70.80.9

1

-0.001 0 0.001

∆E/E

pow

er /

a.u.

59 60 61

1x106

2x106

3x106

4x106

5x106

6x106

59 60 61103

104

105

106

107

P/λ

Wavelength/nm

SASE SEEDED

0 50 100 150 200 250 300 3500.0

5.0x108

1.0x109

1.5x109

2.0x109

2.5x109

3.0x109

3.5x109

4.0x109

Pow

er/G

W

s/µm

SASE SEEDED

red: seededblack: unseeded

Wavelength selection with monochromator

Monochromator

GENESIS PHASE GENESIS

Page 39: Development and Operation of APPLE Undulators at BESSY · 2006. 11. 27. · ue46 apple ii 2001 - 46,3 70 16 0,680 / 0,435 ue52 apple ii 2002 - 52 77 16 0,742 / 0,505 ue49 apple ii

Johannes Bahrdt, BESSY, New Frontiers in Insertion Devices, ELETTRA, Trieste, Italy November 20th-21st, 2006

Summary

• APPLE devices in low and medium energy ringshave to be shimmed for the dynamic multipolesto be compatible with top-up operation

• A detailed analytic representation of the main field and the shim fieldpermits an accurate and fast symplectic tracking

• Tracking studies and experiments show that the dynamic multipolesof long period APPLE devices still can be compensated: Fe-shims in elliptical modeActive compensation in inclined mode

• Upgrade plans: topping upenergy enhencement to 1.9 GeVsmall period devices, elliptical and planar

• Design studies and hardware development for HGHG FEL:Test of components at BESSY SR and MAX-lab (EUROFEL)BESSY Soft X-Ray FEL demonstrator