development of silicon sensors for tracking systems: mpd, cbm and bm@n at nica and fair michael...

Development of Silicon Sensors for Tracking Systems:

MPD, CBM and BM@N at NICA and FAIR

Michael MerkinSINP MSU

09.07.2013 Prague, ASI Symmetries and SPIN 1

UNILAC

SIS18 SIS100/300p-Linac

HESR

CR &RESR

NESR100 m

Primary Beams

• 1012/s; 1.5 GeV/u; 238U28+

• 1010/s 238U73+ up to 35 GeV/u• 3x1013/s 30 GeV protons

Storage and Cooler Rings• radioactive beams

• 1011 antiprotons 1.5 - 15 GeV/c,

stored and cooled

Secondary Beams• range of radioactive beams up to 1.5 - 2 GeV/u; up to factor 10 000 higher in intensity than presently • antiprotons 3 - 30 GeV

Technical Challenges• cooled beams • rapid cycling superconducting magnets• dynamical vacuum

SIS100: Au 11 A GeVSIS300: Au 35 A GeV

APPA

The Facility for Antiproton and Ion Research FAIR


Collider

BM@N

SPD

MPD

Booster,Nuclotron

The NICA-MPD challenge :

to prove QGP creation in high net baryon density region

The BM@N challenge :

to prove QGP creation through self-amplified long-range spinodial correlations


The BM@N experiment project The BM@N experiment project • measurements of the multistrange objects (Ξ, Ω, exotics)

& hypernuclei in HI collisions

• close to the threshold production in the region of high sensitivity to the models prediction

GIBS magnet (SP-41)

TS-target station, T0- start diamond detector,

STS - silicon tracker, ST- straw tracker, DC- drift chambers, RPC- resistive plate chambers, ZDC- zero degree calorimeter, DTE – detector of tr. energy.


FFD

MPD detector at NICAMagnet : 0.5 T T0, Trigger : FFDCentrality &Event plane : ZDC

PID: TOF, TPC, ECAL

Tracking (||<2): TPC

0.5<p<1 GeV/c

Stage 1 (2017)TPC, Barrel TOF & ECAL, ZDC, FFD

Stage 2: IT + Endcaps(tracker,TOF,ECAL)


The CBM experiment at FAIR

DipoleMagnet

Ring ImagingCherenkovDetector

SiliconTrackingSystem

Micro VertexDetector

Transition Radiation Detectors

Resistive Plate Chambers (TOF) Electro-

magneticCalorimeter

Projectile SpectatorDetector(Calorimeter)

Target

two configurations:

- electron-hadron - and muon setup

MuonDetection System


Tracking systems design constraints• Coverage:

― rapitidies from center-of mass to close to beam

― aperture 2.5° < < 25° (less for BM_N)― 4π for MPD

• Momentum resolution ―δp/p 1% ― field integral 1 Tm, ― 25 µm single-hit spatial resolution ― material budget per station ~1% X0

• No event pile-up― 10 MHz interaction rates― self-triggering read-out ― signal shaping time < 20 ns

• Efficient hit & track reconstruction close to 100% hit eff. > 95% track eff. for momenta >1 GeV/c

• Minimum granularity @ hit rates < 20 MHz/cm2

― maximum strip length compatible with hit occupancy and S/N performance

― largest read-out pitch compatible with the required spatial resolution

• Radiation hard sensors compatible with the CBM physics program

― 1 × 1013 neq/cm2 (SIS100)― 1 × 1014 neq/cm2 (SIS300)

• Integration, operation, maintenance― compatible with the confined space

in the dipole magnet


• Aperture: 2.5° < < 25° (some stations up to 38°).• 8 tracking stations between 0.3 m and 1 m downstream the target.• Built from double-sided silicon microstrip sensors in 3 sizes,

arranged in modules on a small number of different detector ladders. • Readout electronics outside of the physics aperture.

System concept

Prague, ASI Symmetries and SPIN 8

Assessment of tracking stations – material budget

station 4

sensor: 0.3% X0

r/o cables: 2×0.11% X0

electronics

front view side view09.07.2013 Prague, ASI Symmetries and SPIN 9

Assessment of tracking stations – sensor occupancy

sensor occupancy := ratio “nb. of hit strips : nb . of all strips“ in a sensor

station 1

Y/cm


Assessment of tracking stations – hit cluster size

in station 4

mean: 2.7

distribution for full STS

cluster of strips := number of adjacent strips in a sensor that fired simultaneously


NICA MPD-ITS

Th

Computer model simulations by V.P.Kondratiev and N.Prokofiev, SPbSU

MPD ITS status


The CBM-MPD STS Consortium: change in sensor production policy – mixed DSSD

SSSD structure of STS (based on experience gotton!)

DSSD: German Party responsibility –• CiS, Erfurt (62х62) •Hamamatsu, Japan (42х62), double metal on P-side

SSSD-sandwich: the Consortium responsibility:•Hamamatsu, Japan (42х62), •On-SemiConductor, Czech Rep. (62х62) •RIMST,RF •“Integral”, Belorussia auxiliary chipcable (SE RTIIE)

Sensor development – involvement of Hamamatsu , an attempt to repeat at vendors in

Russia, Belarussia, and Czech Republics


Microstrip sensors

• double-sided, p-n-n structure • width: 6.2 cm • 1024 strips at 58 m pitch• three types, strip lengths: 2, 4, 6 cm, 4 cm• stereo angle front-back-sides 7.5° • integrated AC-coupled read-out• double metal interconnects on p-side, or

replacement with an external micro cable• operation voltage up to few hundred volts

• radiation hardness up to 1 × 1014 neq/cm2

4” and 6” wafers, 300 µm thicktest and full-size sensors


Prototype Year Vendor Processing Size [cm2] Description

No name 2005 RIVST Double-sided 6.2 4.2 ±7.5 deg

CBM01 2007 CiS double-sided 5.5 5.5 ±7.5 deg

CBM03 2010 CiS double-sided 6.2 6.2 ±7.5 deg

CBM03’ 2011 CiS Single/CBM03 6.2 6.2 test for CBM05

CBM05 2013 CiS double-sided 6.2 6.2 7.5/0 degfull-size

CBM05H4 2013 Hamamatsu double-sided 6.2 4.2 7.5/0 deg full-size

CBM05H2 2013 Hamamatsu single-sided 6.2 2.2 7.5/0 deg full-size

Prototype microstrip sensors

external on-sensor cableCBM05 CBM05H4 CBM05H2

under study: replacement for integrated 2nd metal layer


Sensor N-side Contact Pads


N-side poly-Si resistors


N-side p-stops configuration


N-side Guard Rings


Sensor P-side 1st and 2nd metal


Sensor P-side 1st and 2nd metal details


P-side Guard Rings


Irradiations Studies

9 structures from CiS:Size 7 x 7 mm2,Active area 5 х 5 mm2,Thickness - 280 mkm

6 structures from RIMST:Size - 10 x 10 mm2, Active area ~8 x 8 mm2, Thickness 300 mkm


Doses

CiS:• 7.3 х 1010 n/сm2, • 7.3 х 1011 n/сm2, • 1.6 х 1012 n/сm2, • 1.0 х 1013 n/сm2, • 1.8 х 1013 n/сm2, • 6.4 х 1013 n/сm2

RIMST:

• 1.5 х 1012

n/сm2,

• 1.2 х 1013

n/сm2,

• 2.1 х 1013 n/сm2


Dark current of irradiated test structures VS neutron fluence

(after annealing 80min. at +60oC)

0

1

10

100

1000

10000

100000

1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14

Fluence (n/cm2)

I de

t (n

A)

at

+2

0C

CBM test structures~5x5mm2MSU test structures~9x9mm2


Results

Annealing ~+20С, 60 min.ELMA 1.5х1012

1.0х1013

3.1х1013

3.4х10-17

6.6х10-17

3.6х10-17

7.0х10-17

5.9х10-17

5.5х10-17

CiS 1.0х1013

3.1х1013

1.0х1014

5.4х10-17

3.7х10-17

4.1х10-17

5.9х10-17

5.6х10-17

4.9х10-17

Producer Fluence, (n/см2)

α, A/cm Expected,

α, A/cm


Full Depletion VoltageFDV of irradiated test structures VS

neutron fluence(after anniling 80min. at +600C)

0

20

40

60

80

1.0E+10 1.0E+11 1.0E+12 1.0E+13 1.0E+14

Fluence (n/cm2)

Vfd

(V

) CBM test structure #41m,51m,61m(~5x5mm2)

MSU test structure #66,68(~9x9mm2)

Fit (initial Vfd=80V)

Fit (initial Vfd=25V)


• Good agreement with known data on current degradation for high doses .

• Not so good for low doses, but might be it because of mistakes in dose measurements.

• Expected behavior for full depletion voltage


UMC 180 nm CMOS

die size 6.5 mm × 10 mm

design V1.0 @ AGH Kraków

produced 2012

full-size prototype dedicated to signal detection from the double-sided microstrip sensors in the CBM environment

Channels, pitch 128 + 2 test

Channel pitch 58

Input signal polarity + and -

Input current 10 nA

Noise at 30 pF load 900 e-

ADC range 16 fC, 5 bit

Clock 250 MHz

Power dissipation < 10 mW/channel

Timestamp resolution < 10 ns

output interface 4 × 500 Mbit/s LVDS

new w.r.t. n-XYTER architecture: effective two-level discriminator scheme

fast low noise low power dissipation

Readout chip STS-XYTER


Thank you for your attention!


development of silicon sensors for tracking systems: mpd, cbm and bm@n at nica and fair michael...

Documents

asi symmetries

spin aperture

spin colliderbm

spin sis100

spin ffdmpd detector

hit occupancy

hit strips

hit rates