device design: stage 2 (modified microchannel design)

2
Device Design: Stage 2 (Modified Microchannel Design) Process Sequence 1. Begin with four polished Si wafers 2. Spin SU-8 (negative photoresist) on the Si wafers and pre-bake at 95°C 3. Align each of the four wafers with one of four masks and expose the SU-8 to ultraviolet light, then post- bake at 95°C 4. Develop the SU8 so that the unexposed areas are removed Results in four distinct SU8 molds 5. Spin PDMS on the SU8 molds less than the vertical dimension of the SU-8 protrusions Mix PDMS (Sylgard 184, Dow-Corning) 10:1 with curing agent Spin on PDMS Dip the Si wafer in a sodium dodecyl sulfate(SDS) adhesion barrier and allow it to dry naturally Bake in box furnace for 2 hours at 70°C

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Device Design: Stage 2 (Modified Microchannel Design). Process Sequence Begin with four polished Si wafers Spin SU-8 (negative photoresist) on the Si wafers and pre-bake at 95°C - PowerPoint PPT Presentation

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Page 1: Device Design: Stage 2 (Modified Microchannel Design)

Device Design: Stage 2(Modified Microchannel Design)

Process Sequence 1. Begin with four polished Si wafers2. Spin SU-8 (negative photoresist) on the Si wafers and pre-bake at

95°C3. Align each of the four wafers with one of four masks and expose

the SU-8 to ultraviolet light, then post-bake at 95°C 4. Develop the SU8 so that the unexposed areas are removed

– Results in four distinct SU8 molds 5. Spin PDMS on the SU8 molds less than the vertical dimension of

the SU-8 protrusions– Mix PDMS (Sylgard 184, Dow-Corning) 10:1 with curing agent– Spin on PDMS– Dip the Si wafer in a sodium dodecyl sulfate(SDS) adhesion

barrier and allow it to dry naturally– Bake in box furnace for 2 hours at 70°C

Page 2: Device Design: Stage 2 (Modified Microchannel Design)

Device Design: Stage 2(Modified Microchannel Design)

PDMS

• Mix PDMS (Sylgard 184, Dow-Corning) 10:1 with curing agent.• Spin on PDMS (purple).• Bake in box furnace for 2 h at 70°C.

STEP 1

STEP 2

STEP 3

SU-8 Photoresist

• Spin on SU-8 photoresist (orange)• Pre-bake at 95°C

• Align the wafer with one of the four masks• Expose SU-8 to UV light• Post-bake at 95°C

STEP 4• Develop SU-8 in SU-8 developer• Dip wafer in 0.1 M sodium dodecyl sulfate (SDS) adhesion barrier and let dry naturally

STEP 5

Silicon

• Start with a 4” diameter Silicon Wafer