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Differentiating Your Design

with New Performance Levels

using GaN FETs

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Introduction

Andrea Mirenda

V.P. Americas Sales

3www.epc-co.com

Efficient Power Conversion Corporation

• World’s largest supplier of GaN FETs and ICs for Power Conversion

• CEO – Alex Lidow– Co-Invertor of the modern power MOSFET

(HEXFET)– CEO of International Rectifier – 12 years

• Founded EPC in 2007

• eGaN FETs introduced in 2009

• Headquartered in El Segundo, CA

• Privately funded primarily by CEO + 1 Taiwanese partner

4www.epc-co.com

What is GaN-on-Si?

GaN-on-Si is…

EPC’s eGaN® Technology is the undisputed industry leader

• Faster

• Smaller

• More efficient

• Less expensive

• Easier to integrate

…as compared to Silicon

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LiDAR

Vision for self-driving cars,

augmented reality, and UAVs

Computing

Cloud computing, artificial

intelligence and deep learning

Wireless Power

Cut the cord!

Med Tech

Medical diagnostics,

robotics

Emerging Markets Demanding eGaN Technology

eGaN Technology is Changing the World

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Where is GaN Used?

• DC-DC Converters

• Laser Driver for LiDAR

systems

• Wireless Power Transfer

• High Density AC Adapters

• High Precision Motors

•Cellular Base Stations

• Automotive LED Headlights

• Space Applications

• LED Lighting

• Medical Applications

• Class D Audio

Small size and high efficiency at high frequency

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Adoption ChecklistBest performance?

YES

Reliable?

YES – automotive certification and field experience.

Low Cost?

YES – Gen 5 pricing, simpler systems

Availability?

YES – MOSFETs have long lead times, eGaN devices available from stock

Easy to use?

multiple driver ICs available

More qualified engineers in the design pool

Monolithic Half Bridge will eliminate much design and assembly engineering

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• Conferences– APEC, CES, IEEE, PCIM EU/AP, Application Specific

events

• Social Media– Linked In, GaN Talk Blog,

• Mail list for PR, NPI, Events etc• Articles, white papers, Design Tips, Books,

Videos• Digi-Key Supplier Portal

– https://www.digikey.com/en/supplier-centers/e/epc

• EPC You Tube Channel https://www.youtube.com/user/EPCCorporation

Keeping Updated With EPC

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EPC’s Strategy

• Deploy GaN-on-Si for power conversion

• Manufacture products

– using existing silicon infrastructure for low cost

– high quality

– high capacity potential

• Integrate discretes and ICs to improve performance and reduce design cost

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GaN Applications

Brian Miller

Field Applications Engineer

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EPC’s GaN FETs & ICs

• Power FETs and ICs:– Enhancement mode (normally off) FETs

– Like 5V logic: 5V = on, 0V = off

– Range of FETs: 15 V to 350 V, 0.5 to 90 amps

• Extremely low capacitance and inductance

• Zero Reverse Recovery (QRR)

• Reduces system size and cost– Smaller devices

– Higher frequency reduces capacitor, inductor, etc. size

• Enables new products– Such as LiDAR

• Reliable– > 30B device hours in the field

– <0.1 FIT

EPC2036:

• 100 V

• 1.7 A

• 0.9 x 0.9 mm

VCC

IN

Gnd S

D

EPC2112:

Integrated Gate

Driver

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Dielectric

GaN

Si

AlGaN Electron Generating Layer

Aluminum Nitride

Isolation Layer

DGS- - - - - - - - - - - - - - -- - - -

eGaN FET Structure

Two Dimensional

Electron Gas (2DEG)

• Works like a MOSFET

– Positive Gate to Source Voltage turns on bidirectional channel

– Gate shorted to Source blocks from Drain to Source

• Except …. for a given RDS(on)

– Lower Capacitance & inductance

• Reverse Conduction with Zero QRR

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Fundamental Advantage

GaN gives a smaller device with lower RDS(on)– With lower capacitance

• Faster voltage commutation

• Lower loss switching

– Lower inductance• Faster current commutation

• Lower EMI

– Zero QRR

• Lower Switching losses

200 V eGaN FET

(25 mΩ)

200 V Silicon Device

(30 mΩ)

Gen 5

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Die Size Optimization

For a given application and process

Define equations to quantify performance

Apply parametrics to quantify performance

Gen 5

Optimal

Performance

Price (die size for a given process)

Acceptable

Performance

Perf

orm

ance

Gen 4Gen 5

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1 E-04

1 E-03

1 E-02

50 500 5000

RD

S(o

n),

SP

(Ω·c

m2)

Breakdown Voltage (V)

Theoretical Channel Resistance

Why eGaN® FETs?Highest Semiconductor Performance Possible

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Wide Bandgap

GaN is a wide-bandgap material, meaning that GaN is capable of

supporting a much higher electric field intensity than silicon

– For a given voltage, terminations of a GaN Structure can be

much closer together.

GaN = 1/10 SiGaN

Si

Distance electrons need to travel

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Domain of Utility (Power)

MOSFET

IGBT

GaN-on-Silicon SiC

600 V 900 V

1 X

1.5 X

2 – 3X

DC

Curr

ent C

apabili

ty x

Rate

d V

oltage

10,000 V1700 V

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EPC dominates the GaN product landscape at 200 V and under

– about 70% of the power transistor market

Source: Yole Development August 2016

EPC Focus:

High frequency, high performance,

small footprint, larger markets

Others’ Focus:

High voltage – less

performance sensitive, lower

value, smaller markets

EPC Competitive Advantage

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Ultra-Fast Switching

VIN=12-28 V VOUT=3.3 V

IOUT=15 A FS=1 MHz

2 x EPC2015

5 V/ div

Switching Node

Voltage VIN=28 V IOUT=15 A

Little ringing for low EMI

VIN=28 V~3V overshoot @ 15 Aout

20ns

~1.1ns rise time @ 15 A

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Stable over Temperature

0.6

0.7

0.8

0.9

1

1.1

1.2

0 25 50 75 100 125 150

No

rmali

zed

Th

resh

old

Vo

ltag

e

Junction Temperature ( C)

eGaN FET

Si MOSFET

• Gate Threshold stability over temperature

provides precise, consistent switching

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Total Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 10 20 30 40 50 60 70 80

VG

S(V

)

QG (nC)

VGS vs QG

EPC2022 – 100 V, 3.2 mΩ

BSC035N10NS5 – 100 V, 3.5 mΩ

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Gen 5: Higher Performance - 100 V FETs

84

85

86

87

88

89

90

91

92

93

94

95

96

0 2 4 6 8 10 12 14 16 18 20 22 24 26

Eff

icie

nc

y

Output Current (A)

fsw=500 kHz

VIN=48 V VOUT=5 V

EPC2001C Gen 4

BSZ097N10NS5

EPC2045 Gen 5

EPC2045 Generation 5

Comparable RDS(on)

Gen 5 Devices have higher performance and are about half the size of Gen 4.

Both Gen 5 and Gen 4 are far superior to the best available MOSFET

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Part number Vds Rdson Id-A Rthjc Rthjb Rthja Area PackageVolts mohm A deg C/W deg C/W deg C/W Sq. mm

BSC030N08NS5 80 3 100 20 0.9 50 30 PQFN56EPC2021 80 2.5 90 0.4 1.1 42 13.92 LGA

Active GaN Region

Silicon Substrate

Heat Flow Path• Double side cooling device. • RθJC (to the top) is much lower

than RθJB (to board). • more heat removed from

junction through top Si.• with heat sink attached

• Die Perimeter helps in removing the heat from the junction

• Allows device to run cooler• Carry more current

Thermal Paths in eGaN FETs

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Thermal Management for Flip Chip

HEATSINK

RθJc

RθJB

TIM

RθHARθHA

RθTIMRθTIM

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Thermally Efficient

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟJB,T

herm

al

Resis

tan

ce (°

C/W

)

Device Area (mm2)

RθJB_Si

RθJB_Ga

N

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Dual Sided Cooling

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟJC, T

herm

al

Res

ista

nc

e (°

C/W

)

Device Area (mm2)

RθJC_Si

RθJC_G

aN

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Q2=80°C

Q1=100°C

IOUT=22 A IOUT=14 A

100°C

25°C

Q1=98°C

Q2=84°C

Fan Speed=200 LFM VIN=48 V VOUT=12 V fsw=300 kHz L=4.7 µH

57% Higher Output Current

eGaN FET Can PAK MOSFET

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DC/DC: 48 V to 12 V

Lower On Resistance

Faster

Less Capacitance

Smaller

Lower Cost

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LiDAR

EPC’s eGaN FETs:

– Fast

– High Current Pulses

– Small

LiDAR

evaluation

board EPC9126

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Brushless DC Motor Drive

• Efficient, high PWM frequency operation with:

• Reduced QGD

• Reduced QOSS

• Zero QRR

• Higher PWM frequency allows reduced motor

inductance.

• Reduced motor inductance allows reduction

in copper and iron size, weight, and cost.

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Wireless Power

Resonant: 6.78 or 13.56 MHz

Amplifier

Impedance

Matching

Network +

Supply Source

Source

CoilRectifier

Device

Coil

Load

Impedance

Matching

Network

Device

EPC’s eGaN FETs:

– Efficient/Cool

– High Power

• 100 W +

– Small

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Audio: Class D Amplifiers

EPC’s eGaN FETs:

– Precise Reproduction of Sound

• Better than most liner amplifiers

– Efficient/Cool

• Often needs no heat sink

– Higher Frequency is Possible

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Automotive Schedule

Product Key SpecDie Size

MmAEC Qual Launch

EPC2202 80V_17mΩ 2.1 x 1.6 2Q18

EPC2203 80V_80mΩ 0.9 x 0.9 2Q18

EPC2206 80V_2.2mΩ, 90A 6.1 x 2.3 Qual done – November launch

EPC2212 100V, 13.5mΩ, 18A 2.1 x 1.6 Qual done – November launch

EPC2214 80V_20mΩ 1.35 x 1.35 March

EPC2208 100V_2.8mΩ 67A 3.5 x 2 LGA March

EPC2201 100V_5.5mΩ 4.1 x 1.6 March

EPC2210 200V_18mΩ 3.6 x 1.6 March

EPC2215 200V_8mΩ, 42A 4.6 x 1.6 LGA March

EPC2204 100V_5mΩ 2.5 x 1.5 LGA March

EPC2207 200V_22mΩ, 13A 2.8 x 0.95 LGA April

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Wafer Level Packaging

Fewer interconnects

Smaller, Simpler

Better Performance

Compatible with small outline, surface mount manufacturing

Source/Gate Clips

Source/Gate Die Attach

MOSFET Die

Drain Die Attach

PCB

PCB Gate

ConnectionPCB Source

Connection

PCB Drain

Connection

GateSource

Drain Pad

MOSFET

eGaN FET Die

Drain/Source/Gate

Connections

PCB

PCB Source

ConnectionPCB Gate

Connection

PCB Drain

Connection

eGaN FET

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EPC has over 45 discrete transistors and ICs available for

off-the-shelf delivery

Proven Reliability – 6 years and over 30 billion device

hours in the field with only 3 device failures.

Proven Product Portfolio

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eGaN IC Roadmap

LiDAR IC

Monolithic

Half-Bridge

ICDiscrete

Envelope

Tracking IC

Wireless

Charging

IC Discrete

plus driver

2010 2014 2015 2016 2017

DC-DC IC

2018

Half Bridge

+ Driver +

Level Shift

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• Chip-scale footprint eliminates package costs

Moore’s Law is Alive in GaN

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EPC Resources & Support

• Comprehensive Web with• Device specifications and models• Application notes• Reliability data

Design Review & Layout Support

• Demo Boards • We share Gerber files,

schematics, and BOM for ease of adapting the design

Digi-Key availability at time of release

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Very Complete

Web Site

• epc-co.com

• many links

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Product Selection Tool

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Application Focused

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• EPC is the global leader in GaN-on-Si

• GaN technology is improving rapidly

• EPC has demonstrated eGaN technology reliability in the lab and in the field

• eGaN integration significantly improves performance and lowers design cost

Summary