diffusive charge transport in graphene
TRANSCRIPT
Michael S. Fuhrer KITP Graphene Week University of Maryland
Diffusive Charge Transport in Graphene
Michael S. FuhrerMichael S. FuhrerDepartment of Physics andDepartment of Physics and
Center for Nanophysics and Advanced MaterialsCenter for Nanophysics and Advanced MaterialsUniversity of MarylandUniversity of Maryland
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
Carbon and Carbon and GrapheneGraphene
C-
--
-
Carbon Graphene
4 valence electrons
1 pz orbital
3 sp2 orbitals
Hexagonal lattice;1 pz orbital at each site
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene Unit CellUnit Cell
Two identical atoms in unit cell: A B
Two representations of unit cell:
1/3 each of 6 atoms = 2 atoms
Two atoms2av1av
Michael S. Fuhrer KITP Graphene Week University of Maryland
Band Structure of Band Structure of GrapheneGrapheneTight-binding model: P. R. Wallace, (1947)(nearest neighbor overlap = Ī³0)
āāā
āāāā
ā+āā
ā
āāāā
āāāā
āāāā
ā+Ā±=
2cos4
2cos
23cos41)( 2
0
akakakEE yyxF Ī³k
kx
ky
E
Michael S. Fuhrer KITP Graphene Week University of Maryland
Bonding vs. AntiBonding vs. Anti--bondingbonding
00
0 0
0Ī³
Ī³Ī³
Ā±=ā„ā¦
ā¤ā¢ā£
ā”ā
ā= EH
Ļ āanti-bondingāanti-symmetric wavefunction
ābondingāsymmetric wavefunction
022 11
21 Ī³Ļ ā=ā„
ā¦
ā¤ā¢ā£
ā”= E
011 1
12
1 Ī³Ļ +=ā„ā¦
ā¤ā¢ā£
ā”ā
= E
Ī³0 is energy gained per pi-bond
Michael S. Fuhrer KITP Graphene Week University of Maryland
Bloch states:
AB
AB
āāā
āāāā
ā01
āāā
āāāā
ā10
FA(r), or
FB(r), or
āanti-bondingāE = +3Ī³0
ābondingāE = -3Ī³0
āāā
āāāā
āā11
21
āāā
āāāā
ā11
21
Ī point:k = 0
Band Structure of Band Structure of GrapheneGraphene āā ĪĪ point (point (kk = 0)= 0)
Michael S. Fuhrer KITP Graphene Week University of Maryland
34
32
1
Ļ
Ļ
i
i
e
e
Ī»Ī»
Ī»
K
K
K
āāā
āāāā
ā01FA(r), or āā
ā
āāāā
ā10FB(r), or
Phase:
K 23a
=Ī»a3
4Ļ=K
Band Structure of Band Structure of GrapheneGraphene āā K pointK point
Michael S. Fuhrer KITP Graphene Week University of Maryland
34
32
0 1
Ļ
Ļ
i
i
i
e
e
e =
Phase:
Bonding is Frustrated at K pointBonding is Frustrated at K point
32
02
Ļ
Ī³i
eE ā=
001
ieE Ī³ā=
34
03
Ļ
Ī³i
eE ā=
0
034
32
00 =āā
ā
āāāā
ā++ā=
ĻĻ
Ī³iii eeeE
Re
Im
E1
E2
E3
Michael S. Fuhrer KITP Graphene Week University of Maryland
34
32
0 1
Ļ
Ļ
i
i
i
e
e
e =
Phase:
Bonding is Frustrated at K pointBonding is Frustrated at K point
0Ī“ āā ā
āāā +
ā=Ī“Ļ
Ī³ 32
02
ieE
( )Ī“Ī³ +ā= 001
ieE
āā ā
āāā +
ā=Ī“Ļ
Ī³ 34
03
ieE
( ) 0034
32
00 ==ā
āā
āāāā
ā++ā=
āā ā
āāā +ā
ā ā
āāā +
+ Ī“Ī“ĻĪ“Ļ
Ī“Ī³ iii
i eeeeE
Re
Im
E1
E2
E3
Michael S. Fuhrer KITP Graphene Week University of Maryland
āāā
āāāā
ā01
FA(r), or
āāā
āāāā
ā10
FB(r), or
K
23a
=Ī»a3
4Ļ=K
0Ļ/3
2Ļ/3Ļ
5Ļ/3
4Ļ/3
āanti-bondingā
E = 0!
ābondingā
E = 0!
āāā
āāāā
āā11
21
āāā
āāāā
ā11
21
K point:Bonding and anti-bonding
are degenerate!
Bonding is Frustrated at K pointBonding is Frustrated at K point
Michael S. Fuhrer KITP Graphene Week University of Maryland
)()()( rrvF FFkĻ Īµ=ā h
kvbeibe
ek Fi
ii
k
k
h=āāā
āāāā
āā=
āā ĪµĪø
Īø
;2
12/
2/rk
Īøk is angle k makes with y-axisb = 1 for electrons, -1 for holes
Eigenvectors: Energy:
Hamiltonian:
āāā
āāāā
ā=āā
ā
āāāā
āāāā
āāāā
ā+
ā
)()(
)()(
00
rFrF
rFrF
ikkikk
vB
A
B
A
yx
yxF Īµh
electron has āpseudospināpoints parallel (anti-parallel) to momentum
Kā
K
linear dispersion relationāmasslessā electrons
Band Structure of Band Structure of GrapheneGraphene: : kkĀ·Ā·pp approximationapproximation
Michael S. Fuhrer KITP Graphene Week University of Maryland
Visualizing the Visualizing the PseudospinPseudospin0
Ļ/3
2Ļ/3Ļ
5Ļ/3
4Ļ/3
Michael S. Fuhrer KITP Graphene Week University of Maryland
30 degrees
390 degrees
Visualizing the Visualizing the PseudospinPseudospin0
Ļ/3
2Ļ/3Ļ
5Ļ/3
4Ļ/3
Michael S. Fuhrer KITP Graphene Week University of Maryland
PseudospinPseudospin
K
Kā
kvH
ikkikk
vkvH
tFK
yx
yxFFK
vvh
hvv
h
ā =
āāā
āāāā
ā+
ā=ā =
Ļ
Ļ
'
00Ļ || k
Ļ || -k
ā¢ Hamiltonian corresponds to spin-1/2 āpseudospināParallel to momentum (K) or anti-parallel to momentum (Kā)
ā¢ Orbits in k-space have Berryās phase of Ļ
Michael S. Fuhrer KITP Graphene Week University of Maryland
Kā K
K: k||-x K: k||xKā: k||-x
real-spacewavefunctions(color denotesphase)
k-spacerepresentation
bondingorbitals
bondingorbitals
anti-bondingorbitals
PseudospinPseudospin: Absence of Backscattering: Absence of Backscattering
bonding
anti-bonding
Michael S. Fuhrer KITP Graphene Week University of Maryland
āāPseudospinPseudospināā: Berry: Berryāās Phase in IQHEs Phase in IQHE
Ļ Berryās phase for electron orbits results in Ā½-integer quantized Hall effect
-80 -60 -40 -20 0 20 40 60 800
5
10
15
20
-34-30-26-22-18-14-10-6-22610141822263034
Ļxy (e
2/h)
QHE at T=2.3K, B=7.94T
Rxx
(kĪ©
)
Vg (V)
āā ā
āāā +==
214
2
nhe
xy Ī½Ī½Ļ
422 =Ć=vs gg Berryās phase = Ļ
holes
electr
ons
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene āā FabricationFabrication
ā¢ Starting material is single-crystal Kish graphiteā¢ Mechanically exfoliate on 300 nm SiO2/Si chips
single layer
two layersseveral layers
Optical micrograph (layer thickness verified by AFM)
Single layer device after e-beam lithography
Method adapted from Novoselov, et al. PNAS 102 10341 (2005)
Michael S. Fuhrer KITP Graphene Week University of Maryland
Raman spectroscopy of Raman spectroscopy of graphenegraphene
1200 1350 1500 1650 2400 2550 2700 2850
After Ne+ Irradiation
Ram
an In
tens
ity [a
.u.]
b)
G'
D
D
G
G
Pristine Graphene
Wave Number [cm-1]
G'
a)
K Kā
Einc
Escatt
q
q
K Kā
Einc
Escatt
q
defect
K Kā
Einc
Escatt
qā0
2D or Gā band: ĪERaman = 2ħĻ(K)
G band: ĪERaman = ħĻ(Ī)D band: ĪERaman = ħĻ(K)
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene fingerprint in Microfingerprint in Micro--RamanRaman
ā¢ Raman Gā band is two-photon/two-phonon resonant excitation; sensitive to electronic structure of graphene
1550 1600 2600 27000
1000
2000
3000 Single Layer Lorentz Fit
Ram
an In
tens
ity
Wavenumber [cm-1]
Ferrari, et al., PRL 97, 187401 (2006)
Fuhrer group sample
single Lorentzian Gā peak indicates single-layer graphene
Michael S. Fuhrer KITP Graphene Week University of Maryland
500 nm
300 nm
300 nm
Novel photoresist residue removal processAnneal in flowing H2 at 400Ā°C
Residues from PMMA/MMA photoresist
Complete removal of photoresist residues Atomically clean STM images
Removing Removing PhotoresistPhotoresist Residue from Residue from GrapheneGrapheneIshigami, et al., Nano Letters 7, 1643 (2007)
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
Electrical Characterization of Electrical Characterization of GrapheneGraphene
ā¢ Ambipolar, symmetric conductionā¢ Finite minimum conductivity ~ [4-10]e2/hā¢ Field-effect mobility up to 20,000 cm2/Vs
-100 -80 -60 -40 -20 0 20 40 60 80 1000
1
2
3
4
5
T=2.1K
Ļ(kĪ©
)
Vg(V)
holes electrons
Michael S. Fuhrer KITP Graphene Week University of Maryland
Electrical Characterization of Electrical Characterization of GrapheneGraphene
ā¢ Ambipolar, symmetric conductionā¢ Finite minimum conductivity ~ [4-10]e2/hā¢ Field-effect mobility up to 20,000 cm2/Vs
-100 -80 -60 -40 -20 0 20 40 60 80 1000
2
4
6
8
10
12
14
T=2.1K
Ļ(kĪ©
-1)
Vg(V)
Ļmin ā 6e2/h
holes electrons
ggFE dV
dcdn
de
ĻĻĪ¼ 11==
Michael S. Fuhrer KITP Graphene Week University of Maryland
Boltzmann TransportBoltzmann Transport
-100 -80 -60 -40 -20 0 20 40 60 80 1000
2
4
6
8
10
12
14
T=2.1K
Ļ(kĪ©
-1)
Vg(V)
ĻĻ )(2
22
EDve F=D(E) is density of statesĻ is momentum relaxation timevF is Fermi velocity
E
D(E)
EF
22
2)(F
F
vEEDhĻ
=Graphene:
But: Fermiās Golden Rule:
constant!)(
)('21 2
āā“
ā
Ļ
ĻĻ
ED
EDkVkh
Ļ is independent of EF!True for point defects, phononssee e.g. Pietronero (1980), T. Ando (1996)
Michael S. Fuhrer KITP Graphene Week University of Maryland
How to explain linear How to explain linear ĻĻ((VVgg)?)?
-100 -80 -60 -40 -20 0 20 40 60 80 1000
2
4
6
8
10
12
14
T=2.1K
Ļ(kĪ©
-1)
Vg(V)
)('21 2EDkVk
h
ĻĻ
ā
Ļ ~ EF1/2 ~ n ~ Vg
See:Ando, J. Phys. Soc. Jpn. 75, 074716 (2006)Nomura & MacDonald PRL 98, 076602 (2007)Cheianov & Fal'ko PRL 97, 226801 (2006)Hwang, Adam, & Das Sarma, PRL 98, 186806 (2007)
Interaction must be q-dependent
Coulomb interaction: qeVCoulomb Īŗ
Ļ 22=
q = |k ā kā| ~ kF
N.B. In graphene, screenedCoulomb interaction remains ~1/kF
Michael S. Fuhrer KITP Graphene Week University of Maryland
Minimum Conductivity of Minimum Conductivity of GrapheneGraphene
e h
ā¢ At minimum conductivity point, graphene breaks into electron and hole āpuddlesāā¢ Minimum conductivity decreases with increasing impurity concentration
Ī¼Ļ en*min =Residual density in puddles
]20[1
)]4,(2[* 02
he
n
dkrCrnn
imp
FsRPA
simp
=
=
Ī¼
Weak function of nimp, rs, d
Adam, et al., PNAS 104, 18392 (2007)
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
Charged Impurity Scattering: Potassium Doping in UHVCharged Impurity Scattering: Potassium Doping in UHVJ. H.J. H. Chen, et al. Chen, et al. Nature Physics Nature Physics 44, 377 (2008), 377 (2008)
-80 -60 -40 -20 0 200
20
40
60
Con
duct
ivity
[e2 /h
]
Gate Voltage [V]
Doping time 0 s 6 s 12 s 18 s
Upon doping with K:1) mobility decreases2) Ļ(Vg) more linear3) Ļmin shifts to negative Vg
4) plateau around Ļmin broadens5) Ļmin decreases (slightly)
All these feature predicted for Coulomb scattering in grapheneAdam, et al., PNAS 104, 18392 (2007)
ā¢ Clean graphene in UHV at T = 20 Kā¢ Potassium evaporated on graphene from getter
impnVs5x1011
=Ī¼Magnitude of scattering in quantitative agreement with theory:
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
e h
MagnetoresistanceMagnetoresistance at Minimum Conductivity Pointat Minimum Conductivity PointS. Cho and M. S. Fuhrer, S. Cho and M. S. Fuhrer, PRB PRB 7777, 084102(R) (2008), 084102(R) (2008)
-8 -6 -4 -2 0 2 4 6 8
0.2
0.4
0.6
0.8
B (T)
Ļ xx (h
/e2 )
Expt. T = 300 K Two-fluid model Ī± = 0.4 EMT model Ļxx,1 = 0.88
Functional form of Ļ(B):effective medium theory for inhomogeneous e/h regions[Guttal and Stroud, PRB 71 201304 (2005)]
0 5 10 15 20 25 300
20
40
60
80
100
120
0
1
2
3
4
5
d2Ļ
xx /dH2 (he
-2T-2)
Ļ xx (e
2 /h)
V g (V)
Large spike in magnetoresistance at Dirac point
ā¢ At minimum conductivity point, graphene breaks into electron and hole āpuddlesāHwang, et al., PRL 98, 186806 (2007); Adam, et al., PNAS 104, 18392 (2007)
Michael S. Fuhrer KITP Graphene Week University of Maryland
Charged Impurity Scattering: Minimum ConductivityCharged Impurity Scattering: Minimum ConductivityJ. H.J. H. Chen, et al. Chen, et al. Nature Physics Nature Physics 44, 377 (2008), 377 (2008)
e h
ā¢ At minimum conductivity point, graphene breaks into electron and hole āpuddlesāā¢ Minimum conductivity decreases with increasing impurity concentration
0 2 4 6 8 10 12
2
4
6
8Run 1: ĻminRun 2: ĻminRun 3: ĻminRun 4: ĻminTheory: d=0.3nm d=1nm
Con
duct
ivity
[e2 /h
]
1/Ī¼e [Vs/m2] ~ nimp-80 -60 -40 -20 00
4
8
12
16
20
Con
duct
ivity
[e2 /h
]
Gate Voltage [V]
Doping time 0 s 6 s 12 s 18 s
Ļmin
Adam, et al., PNAS 104, 18392 (2007)
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
Linear T-dependenceat low T
Longitudinal acousticphonons in graphene
Ļ = Ļ0 + ATA = 0.1 Ī©/K
A is independent of charge carrier density, as predicted
0 200 4000.006
0.008
0.010
0.012
0.014
0.016
200 400
Ļ[h/
e2 ]
T [K]
Sample 1 Run 1 Run2 Vg=
20V 20V 30V 30V 40V 40V 50V 50V 60V 60V
Sample 2 Vg=
20V 30V 40V 48V 57V
2222
2
2 16)(
Fss
BAA vve
TkDehT
ĻĻ
hāā ā
āāā= ā DA = 18 Ā± 1 eV
(good agreement w/CNT, graphite)
ElectronElectron--Phonon ScatteringPhonon ScatteringJ. H. Chen, et al. J. H. Chen, et al. Nature Nanotechnology Nature Nanotechnology 33, 206 (2008), 206 (2008)
Michael S. Fuhrer KITP Graphene Week University of Maryland
0 200 400
0.01
0.1
0 200 400
Ļ [h
/e2 ]
T [K]
Sample 1 Sample 2Activated T-dependence at high T
Consistent with:
āā ā
āāā
ā+
ā
++=
ā
15.6
11
),(
/)155(/)59(
0
TkmeVTkmeV BB eeBn
ATTn
Ī±
ĻĻ
LA phonons in graphene
polar optical surface phonons in SiO2(see Fratini and Guinea, PRB 77, 195415 (2008))
Potential due to polar optical phonons is long-ranged; leads to density-dependent resistivity
(3 global fit parameters for all curves)
ElectronElectron--Phonon ScatteringPhonon ScatteringJ. H. Chen, et al. J. H. Chen, et al. Nature NanotechnologyNature Nanotechnology 33, 206 (2008), 206 (2008)
Michael S. Fuhrer KITP Graphene Week University of Maryland
Mobility Limits in Mobility Limits in GrapheneGrapheneJ. H. Chen, et al. J. H. Chen, et al. Nature Nanotechnology Nature Nanotechnology 33, 206 (2008), 206 (2008)
Room Temperature Limits:
Currently:Ī¼RT ~ 10,000 cm2/Vs(charged impurities)
Substrate-limited:SiO2 surface phonons:Ī¼RT ~ 40,000 cm2/Vs
Intrinsic:acoustic phonons:Ī¼RT ~ 200,000 cm2/Vs@ n = 1012 cm-2
Room temperature mobility of 200,000 cm2/Vs possible!Ballistic transport over >2 microns
10 100
104
105
106
Ī¼ [c
m2 /V
s]
T [K]
Graphene: Sample 1 Sample 2
LA phonons SiO2 phonons
Impurities: Sample 1 Sample 2
Total implied mobilities: Sample 1 Sample 2
At room temp.:Si:
InSb:
Ī¼ = 1,500 (e)Ī¼ = 450 (h)
Ī¼ = 77,000 (e)
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
rrss in in graphenegraphene??
2/122/3
2
4*
nem
aar
bs
hĪµĻ== Problem: what is mass?
(no characteristic length ab for massless particles)
Fs v
erhĻĪµ4
2
=
avkvK
aeU
FF
hh ==
=ĻĪµ4
2
Independent of density!
KUrs =
U = potential energy of two electrons at distance a
K = kinetic energy of electron with wavelength Ī» = 2Ļa
There still exists a unitless quantity:
bs a
aKUr ==
Massive particles:
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGrapheneāāss Fine Structure Constant?Fine Structure Constant?
Fs v
erhĻĪµ
Ī±4
2
=ā”For graphene, define:Fine structure constant, with
c ā vFĪµ0 ā Īµ
describes strength of Coulomb interaction
For:vF = 108 m/s = c/300
Īµ = 2.5Īµ0
1āĪ± Graphene is:weakly interacting for condensed matter,strongly interacting for relativistic Fermions
Interesting opportunities:Atomic collapse of hypercritical nuclei: Zc = 1/Ī± = 137 (difficult to achieve in nuclear physics),Possible in graphene where Zc ā 1
036.1371
4 0
2
ā=c
ehĻĪµ
Ī±Ī± is fine structure constant
ācoupling constantā ā describes relative strength of Coulomb
interaction
Michael S. Fuhrer KITP Graphene Week University of Maryland
Tuning the Tuning the āāFine Structure ConstantFine Structure ConstantāāC. Jang, et al. C. Jang, et al. Physical Review Letters Physical Review Letters 101101, , 146805 (2008) 146805 (2008)
2/122/3
2
4*
nemrshĪµĻ
=
Conventional 2D electron system:
Tune rs thru density n
FF ve
ve
hh 0
22
44 ĻĪŗĪµĻĪµĪ± ==
Graphene:
Grapheneās āFine Structure ConstantāĪ± independent of n
Fveh0
2
4ĻĪµĪ± =
Fveh0
2
21 42
ĻĪµĪŗĪŗĪ± āā
ā
āāāā
ā+
=
But, can tune Īŗ!
Michael S. Fuhrer KITP Graphene Week University of Maryland
Two Effects of Dielectric ScreeningTwo Effects of Dielectric ScreeningC. Jang, et al. C. Jang, et al. Physical Review Letters Physical Review Letters 101101, , 146805 (2008) 146805 (2008)
Reducing Ī±:ā¢ Reduces interaction of carriers with charged impurities
ā Dominant effect for charged-impurity scatteringā¢ Reduces screening by carriers
ā Dominant effect for short-range scattering
...3
322
)( ;)(
0 +ā==Ī±ĻĪ±
Ī±ĻĻ SS
S FF
Short-range scattering increased:Conductivity ĻS decreases
Coulomb scattering reduced:Mobility Ī¼L increases
...)( ;)(
12 22
+== ĻĪ±Ī±Ī±
Ļ LLimp
L FFn
nhe
Within RPA:
1~ ;~* ;* 22
min Ī±Ī¼Ī±Ī¼Ļ LL nen=
e-h puddle density decreased,mobility increased:Min. conductivity Ļmin constant
Michael S. Fuhrer KITP Graphene Week University of Maryland
-30 -20 -10 0 10 20 30 40 500
20
40
60
80
Expt. Vacuum Ice
Fit Eqn. 2 Vacuum Ice
Ļ (
e2 /h)
Vg (V)
Add ice to clean graphene in UHV:Ī± (SiO2/vacuum) = 0.81 Ī± (SiO2/ice) = 0.56
-30 -20 -10 0 10 20 30 40 500
20
40
60
80
Expt. Vacuum Ice
Ļ (
e2 /h)
Vg (V)-30 -20 -10 0 10 20 30 40 50
0
20
40
60
80
Expt. VacuumĻ
(e2 /h
)
Vg (V)
Fit:
Ļ-1 = (neĪ¼L)-1 + ĻS-1
Coulomb (long-range) scattering
Short-range scattering
(slight asymmetry in Coulomb scattering; take symmetric component of each)
Effects of Dielectric ScreeningEffects of Dielectric ScreeningC. Jang, et al. C. Jang, et al. Physical Review Letters Physical Review Letters 101101, , 146805 (2008) 146805 (2008)
Michael S. Fuhrer KITP Graphene Week University of Maryland
8000
10000
12000
14000
Ī¼ L (c
m2 V
-1s-1
)160
200
240
280
Ļ S (e
2 /h)
0 1 2 3 4 5 6 7
5
6
7
8
Ļ min
(e2 /h
)
Number of Ice Layers
Coulomb scattering reduced:Mobility Ī¼L increases
Short-range scattering increased:Conductivity ĻS decreases
e-h puddle density decreased,mobility increased:Min. conductivity Ļmin constant
Dielectric Screening: Theory and Expt.Dielectric Screening: Theory and Expt.C. Jang, et al. C. Jang, et al. Physical Review Letters Physical Review Letters 101101, , 146805 (2008) 146805 (2008)
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene in highin high--K liquids K liquids āā a mystery?a mystery?
T. M. Mohiuddin et al. Arxiv:0809.1162 (Manchester group)ā¢ Mobility increases <50% in ethanol (Īŗ = 25) and liquid water (Īŗ = 80)ā¢ Concluded that charged impurities NOT dominant scatterers in graphene
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene in highin high--K liquids K liquids āā our groupour group
-20 -10 0 10 200
20
40
60
80
100
120
Ļ (e
2 /h)
Vg (V)
vacuum
Ī¼ = 5500 cm2/Vs
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene in highin high--K liquids K liquids āā our groupour group
-20 -10 0 10 200
20
40
60
80
100
120
Ī¼ = 28,000 cm2/Vs
Ļ (e
2 /h)
Vg (V)
vacuum isopropanol
Ī¼ = 5500 cm2/Vs
IsopropanolĪŗ = 19.9Ī± = 0.167
Mobility up 510%
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene in highin high--K liquids K liquids āā our groupour group
-20 -10 0 10 200
20
40
60
80
100
120
Ī¼ = 28,000 cm2/Vs
Ī¼ = 45,000 cm2/Vs
Ļ (e
2 /h)
Vg (V)
vacuum isopropanol water
Ī¼ = 5500 cm2/Vs
DI WaterĪŗ = 80
Ī± = 0.047Mobility up 820%
IsopropanolĪŗ = 19.9Ī± = 0.167
Mobility up 510%
Possibly reaching limit set by substrate polar optical
phonons
Michael S. Fuhrer KITP Graphene Week University of Maryland
What is the difference?What is the difference?
Au
SiO2
Si
graphene
+ + + + + + + + + + + + + + + + + + + +
- -- -
- -
- -- -
- -
Vg
Au
SiO2
Si
graphene
+ + + + + + + + + + + + + + + + + + + +
Vg
- - - - - - - - - - - - - - - - - - - - - - - - - - - -
-20 -10 0 10 200
20
40
60
80
100
120
Ī¼ = 28,000 cm2/Vs
Ī¼ = 45,000 cm2/Vs
Ļ (e
2 /h)
Vg (V)
vacuum isopropanol water
Ī¼ = 5500 cm2/Vs
Mohiuddin et al. :- Used electrolyte as gate- Gate charges are ions ā scatterers!
Our work :- Used SiO2 back-gate- No addāl scatterers
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
GrapheneGraphene Corrugation Corrugation -- ScatteringScattering
)('21 2EDkVk
h
ĻĻ
ā q-dependent interactionā carrier-density dependent Ļ(n)
q = |k ā kā| ~ kF
ĻĻ FEhe22
=
1) Coulomb interaction: Ļ ~ n
[ ] Hrhrh 22)0()( āā Ļ ~ n2H-1
height-height correlation function
2) Corrugated grapheneā :
ā Katsnelson & Geim, Phil. Trans. R. Soc. A366, 195-204 (2008)
What is exponent 2H?
Michael S. Fuhrer KITP Graphene Week University of Maryland
Model 1: Intrinsic graphene bending constrained via interface confining potential
Model 2: Corrugations determined by strong direct interaction governed by height variations of the substrate
Substrate
grapheneV
h
ho
F =12
Īŗ ā2h(x, y)[ ]2+
12
Vh2 x,y( )
h(r) ā h(0)( )2 ~ r2
Ļ(n) ~ n(mimics Coulomb scatting)
Height-height correlations will match those of the substrate.
Typical non-equilibrium surfaces show: with 2H ā 1.
( ) Hrhrh 22 ~)0()( ā
grapheneho
Substrate
Ļ(n) ~ constant(mimics short range scattering)
GrapheneGraphene CorrugationCorrugation
Michael S. Fuhrer KITP Graphene Week University of Maryland
200 nm-1.0 -0.5 0.0 0.5 1.0
0.00
0.05
SiliconGraphene
Prob
abili
ty
Height [nm]
Non-contact AFM image in UHV
M. Ishigami et al., Nano Letters 7, 1643 (2007)
SiO2
graphene
G ~ r1.1
GrapheneGraphene Corrugations on SiOCorrugations on SiO22
Michael S. Fuhrer KITP Graphene Week University of Maryland
200 nm-1.0 -0.5 0.0 0.5 1.0
0.00
0.05
SiliconGraphene
Prob
abili
ty
Height [nm]
ā¢ Ļoxide = 3.1 Ć and Ļgraphene = 1.9 Ć
ā¢ Graphene 60% smoother than SiO2
Non-contact AFM image in UHV
Oxide-graphene boundary
M. Ishigami et al., Nano Letters 7, 1643 (2007)
SiO2
graphene
G ~ r1.1
GrapheneGraphene Corrugations on SiOCorrugations on SiO22
Michael S. Fuhrer KITP Graphene Week University of Maryland
200 nm
Non-contact AFM image in UHV
Oxide-graphene boundary
M. Ishigami et al., Nano Letters 7, 1643 (2007)
SiO2
graphene10
0.01
0.1
GrapheneSilicon Oxide
G(x
) [nm
2 ]Distance [nm]
Height-height correlations function
with 2H ā 1
( ) Hrhrh 22 ~)0()( āĻ(n) ~ constant
(mimics short range scattering)
GrapheneGraphene Corrugations on SiOCorrugations on SiO22
Michael S. Fuhrer KITP Graphene Week University of Maryland
STM vs. NCSTM vs. NC--AFM topographyAFM topography
STM: 1V, ~50 pA NC-AFM: 4.6 Hz Īf
ā¢ Both images acquired from same area, on 1-layer graphene device.ā¢ Why does STM measure topography so differently? ā¢ STM more strongly interacting ā electro-mechanical effect
Similar to Morgenstern group (preprint) Reproduces our earlier workIshigami, et al. Nano Letters 7, 1643 (2007)
Same area of graphene!
Michael S. Fuhrer KITP Graphene Week University of Maryland
OutlineOutlineI. Introduction to Graphene
āMasslessā electronsPseudospin and Berryās phase
II. Fabrication and Characterization of Graphene on SiO2
Micro-Raman spectroscopyCleaning graphene
III. Diffusive Transport in GrapheneBoltzmann Transport
Charged impuritiesCharged impurities ā minimum conductivityPhonons Dielectric Environment ā Tuning Fine Structure ConstantCorrugationsLattice defects
Michael S. Fuhrer KITP Graphene Week University of Maryland
Lattice defect scattering in Lattice defect scattering in graphenegrapheneCharged-impurity scattering:
Linear Ļ(Vg)
Intravalley scatteringNo backscatteringweak anti-localization
Metallic
Defect scattering:
Constant Ļ(Vg)? [Shon, & Ando, (1998)]Linear Ļ(Vg)? [Hentschel (2007);
Stauber (2007)]
Expect intravalley and intervalley scatteringBackscattering allowedweak anti-localization or weak localization?
Metallic or insulating?
X X
Michael S. Fuhrer KITP Graphene Week University of Maryland
Inducing lattice defects in Inducing lattice defects in graphenegraphene
ā¢ Sample is cleaned in H2/Ar at 300 Ā°C [Ishigami, Nano Letters 7, 1643 (2007)]
ā¢ Sample baked in UHV at 220 Ā°C overnight
ā¢ Ne+ or He+ ion irradiation at 500 eV via sputter gunā¢ Dose given by current collected by Faraday cup
ā¢ Sample annealed at 220 Ā°C overnight between ion irradiation runs; mobility partially recovers on annealing
Expect:ā¢ One ion ā one defect consisting of multi-atom vacancy
See e.g. G. M. Shedd and P. E. Russell, JVSTA 9, 1261 (1991)J. R. Hahn, et al., PRB 53, R1725 (1996)
Michael S. Fuhrer KITP Graphene Week University of Maryland
Raman D peak - intervalley scattering
1200 1350 1500 1650 2400 2550 2700 2850
After Ne+ Irradiation
Ram
an In
tens
ity [a
.u.]
b)
G'
D
D
G
G
Pristine Graphene
Wave Number [cm-1]
G'
a)
Ī¼ = 8600 cm2/Vs
Ī¼ = 1300 cm2/Vs
[ ]1
4310 nm2.4x10ā
=āāāā
āāāā
ā=
G
Da I
IL Ī»Graphitic particles of grain size La:Cancado, et al.,
APL 88, 163106 (2006).
Point defects: identify La with defect scattering length.Our samples: La = 70 nm
Ī¼ = 1300 cm2/Vs; n ā 1013 cm-2 (in ambient) ā lmfp ā 50 nm
Defect scattering lengths from Raman and transport agree
0
20
40
60
Ļ (e
2 /h)
-40 -20 0 20 400
20
40
60
Vg (V)
Mobility
Michael S. Fuhrer KITP Graphene Week University of Maryland
Defects in Defects in graphenegraphene
Fit each curve to: Ļ-1 = (neĪ¼)-1 + ĻS
āLong-range scatteringāConstant mobility
āShort-range scatteringāConstant resistivity
-50 -25 0 25 500
30
60
90
120Ne+ Dosage (1010 cm-2)
0 3.8 8.2 18.2 38.7 72.2
Ļ [e
2 /h]
Vg [V]
T = 41 K
Michael S. Fuhrer KITP Graphene Week University of Maryland
Defects in Defects in graphenegraphene
-50 -25 0 25 500
20
40
60
80Ne+ Dosage (1010 cm-2)
0 3.8 8.2 18.2 38.7 72.2
Con
duct
ivity
[e2 /h
]
Gate Voltage [V]
T = 41 K
-80 -60 -40 -20 0 20 400
20
40
60
80
Con
duct
ivity
[e2 /h
]
Gate Voltage [V]
K dose (1010 cm-2) 0 160 370 570
Ne+ irradiation(lattice defects)
K doping(charged impurities)
Michael S. Fuhrer KITP Graphene Week University of Maryland
Defects in Defects in graphenegraphene
0 2 4 6 8 10 120
2
4
6
8
10
12
14
Ne+ irradiation He+ irradiation
Charged Impurities (K)
1/Ī¼
[Vs/
m2 ]
Dosage [1011 cm-2]
0 2 4 6 8 10 120
1
2
3
4
5
6
Ne+ irradiation He+ irradiation
Ļ shor
t-ran
ge [h
/e2 /1
000]
Dosage [1011 cm-2]
Defects:ā¢ Defects change the linear term in Ļ(Vg)
Like charged impurities!
ā¢ Linear Ļ(Vg) scattering 4x stronger than for same concentration of charged impurities
Defects:ā¢ Carrier-density-independent Ļs scattering does not change
ā¢ Ļs corresponds to lmfp ~2 microns
ā Ļs cannot be the scattering seen in Raman D band
Michael S. Fuhrer KITP Graphene Week University of Maryland
Defects in Defects in graphenegraphene āā Minimum conductivityMinimum conductivity
0.0 0.2 0.4 0.6 0.80
2
4
6
Ne+ irradiation He+ irradiation K Dosing
Ļ min [e
2 /h]
Ī¼ [m2/Vs]
Minimum conductivity:
n* is carrier density in āpuddlesān* is function of charged impurity density
Ī¼Ļ en*min =
Charged impurities:nimp increases: Ī¼ decreases, n* increases
ā Ļmin changes very weakly
Defects:ndefect increases: Ī¼ decreases, n* constant
ā Ļmin proportional to Ī¼Ī¼Ļ en*min =
Ī¼Ļ en*min =n* āĪ¼ ā
n* const.Ī¼ ā
increasing irradiation
Michael S. Fuhrer KITP Graphene Week University of Maryland
Defects in Defects in graphenegraphene āā Metal or Insulator?Metal or Insulator?Theory:Graphene with only intravalleyscattering is metallic (weak anti-localization)
Graphene with intervalley scattering is insulator (weak localization)[Bardarson, et al. PRL 99, 106801 (2007)]
Experiment:Graphene with charged impurities shows metallic Ļ(T) at low T[Novoselov, Nature 438, 197 (2005)][Chen, Nature Nano 3, 206 (2008)]
Graphene with defects shows diverging Ļ(T) at low T even for modest mobilities (~2,000 cm2/Vs)!
10 1000.01
0.1
Ļ [h
/e2 ]
Temperature [K]
Ne+ irradiatedVg-Vg,min =
0 V 14V 30V
Pristine Vg-Vg,min =
0 V 14V 30V
Ī¼RT = 2,500 cm2/Vs
Ī¼RT = 13,000 cm2/Vs
Michael S. Fuhrer KITP Graphene Week University of Maryland
MidgapMidgap states states -- TheoryTheory
( )Rknn
hene F
ddd
22
ln2== Ī¼Ļ
[Hentschel & Guinea, PRB 76, 115407 (2007); Stauber, Peres, & Guinea, PRB 76, 205423 (2007)]
ā¢ Defect potential modeled as circular well of radius R, depth Īµ0, intervalley scattering Ī.ā¢ Spectrum inside the potential well is gapped by Ī; has bound midgap states.ā¢ Conductivity is:
0 2 4 6 8 10 120
2
4
6
8
10
12
14
Ne+ irradiation He+ irradiation
Charged Impurities (K)
1/Ī¼
[Vs/
m2 ]
Dosage [1011 cm-2]
Experimentally, Ī¼d ā [1.2 Ć 1015 V-1s-1]/nd
For n = 2Ć1012 cm-2 ā R ~ 8 Ć Reasonable value for 500 eV irradiation(multiple-atom vacancies)
ln2(kFR) dependence not observed, but kF only varies by factor of ~3 outside puddle regime (n > n*)
Michael S. Fuhrer KITP Graphene Week University of Maryland
ConclusionsConclusionsā¢ Mobility of graphene on SiO2 limited by charged impurities
ā Charged impurities give linear Ļ(Vg) ā Minimum conductivity determined by density in e-h puddles
ā Addition of dielectric layer increases mobility
ā¢ Room temperature intrinsic mobility ~200,000 cm2/Vsā Remote interfacial phonon scattering from SiO2 limits to ~40,000 cm2/Vs
ā¢ Corrugationsā Graphene corrugations follow SiO2 substrate roughness
ā¢ Graphene with lattice defectsā Linear Ļ(Vg) with 4x lower mobiltiy compared to charged impuritiesā Consistent with midgap states, R = 2-3 Ć ā Depressed Ļmin~ Ī¼; can be less than 4e2/Ļhā Intervalley scattering gives insulating Ļ(T); Raman D band
Michael S. Fuhrer KITP Graphene Week University of Maryland
Prof. Michael S. Fuhrerās GroupSungjae ChoChaun Jang
Shudong XiaoAlexandra Curtin
Prof. Ellen D. Williamsā Group:Dr. William Cullen
Prof. Masa Ishigami (now @ UCF)Daniel Hines Jianhao Chen
grapheneFabry-PĆ©rot
transfer-printing
STM
MR in graphene
Fuhrer group:Fuhrer group:Williams group:Williams group:
Das Sarma group:Das Sarma group:More Info:More Info:
wwww.physics.umd.edu/mfuhrerww.physics.umd.edu/mfuhrerwwww.physics.umd.edu/spgww.physics.umd.edu/spgwww.physics.umd.edu/cmtcwww.physics.umd.edu/cmtc
-80 -60 -40 -20 0 200
20
40
60
Con
duct
ivity
[e2 /h
]
Gate Voltage [V]
Doping time 0 s 6 s 12 s 18 s
UHVdoping,
dielectric expts.
Prof. Sankar Das Sarmaās Group Dr. Shaffique Adam Dr. Euyheon Hwang
Dr. Enrico Rossi Wang-Kong TseTheory
Funding:Funding: