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The Junction Built-In Voltage

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Charge Stored in the Depletion Region

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 The width W of the depletion layer 

electrical permittivity

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The Current–Voltage Relationship of the Junction

 The concentration of holes in the n region at the edge of thedepletion region

Minority-carrier distribution in a forward-biased pn junction.

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As the injected holes diuse into the n material, some will recombinewith the majority electrons and disappear. Thus, the excess holeconcentration will decay exponentially with distance.

diusion length

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Bipolar unction Transistors!BTs"

 The physical structure of the bipolar transistor andhow it wor#s.$ow the transistor can be used to ma#e anampli%er.

$ow to obtain linear ampli%cation from the fundamentallynonlinear BT.

electrons and holes&participate in the current-conduction

process

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'urrent (ow in an npn transistor biased to operate in theactive mode.

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)ro%les of minority-carrier concentrations in the base and in the

emitter of an npn transistor operatin* in the active mode

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