discrete solution and...

Discrete Solution and Application:Power MOSFET and Rectifier

陳文聰

意法半導體大中華暨亞太區

功率元件技術行銷專案經理

Agenda

Power MOSFET

• High Voltage MOSFET

• Low Voltage MOSFET

• Silicon Carbide MOSFET

• Package

Power Rectifier

• Silicon Carbide Diodes

• FERD Diodes

• Differentiation through innovation

Flat / package size reduction

2

Power MOSFETHigh Voltage MOSFET

High Voltage Power MOSFET

SuperMESHTM K3

MDmeshTM K5

MDmeshTM M2

Planar

technology

Super-junction

technology

200V 400V 800V 1050V 1500V

PowerMESH

“N series”SuperMESH “NK series”

Motor control

Adapters

Telecom

DC-DC

Industrial

SMPS

Automotive

ServersUPS

MDmesh

1200V1000V650V 700V500V

MDmeshTM DM2 with fast diode

MDmeshTM M5

MDmeshTM

M2 EP

MDmeshTM M6

600V

MDmeshTM M6S

4

Products & Applications

SuperJunction Mdmesh™ M5, M2, M6S, M6, DM2/DM6 & K5 Technologies

M5: leading technology for

high end hard switch

Key Features

• Industry’s one of the

lower RDS(on) in the

Market

• High switching speed

• 650V BVdss rated

Benefits

• highest efficiency in the

application

• Smaller form factor of

final system

• Especially targeted for

High Power hard

switching (PFC, Boost,

TTF, Flyback)

M6/ M2 / M2 EP:

best for LLC

Key Features

• Up to 30% lower Qg

(equivalent die size)

• 400 – 700V Bvdss rated

• Back-to-Back G-S zener

protected

Benefits

• Reduced switching

losses through optimized

(Qg) (Ciss, Coss)

• Enhanced immunity vs

ESD & Vgs spikes in the

application


HB LLC, TTF, Flyback..)

• M2 EP Tailored for Very

High Frequency

Converters (f > 150 kHz)

DM2 DM6 Fast Diode:

best F/B ZVS

Key Features

• Integrated fast body

diode

• Softer commutation

behavior

• Back-to-Back G-S zener

protected

Benefits

• Reduced switching

losses through

optimized (Qg) (Ciss,

Coss)

• High peak diode dV/dt

capabilities

• Best use in Full Bridge

ZVS

K5: best in class

Very High Voltage

Key Features

• Extremely good RDS(on)

at very high BVDSS


• From 800 till 1500V

BVDSS rated

• 950 V and 1050 V

integrated fast body

diode

Benefits

• High efficiency with

lower design complexity


flyback LED topologies

and high voltage range in

the application

M6S: improved

performance for medium

power hard switch

Key Features

• Up to 15% RDS(on)

reduction vs M2 tech.



Benefits

• Better efficiency in

medium Power hard

switch application

• Smaller form factor of

final system


hard switching (PFC,

Boost, TTF, Flyback)

5

Flyback / Two

Transistors Forward

M5

400V to 700V 550V - 650V

Soft-switching

topologies LLC

resonant

Solar Inverters, UPS, HEV

Chargers /

Adapters /

SilverBox / LED

lighting

DM2

Hi-End PFC, Hard

switching topologiesZVS / FB & HF

600V- 650V

K5

Flyback

LED Driver

LED Lighting

Adapter / Metering

M6 DM6 K5 / DK5

800V 950V

1050V 1200V 1500V

M9

M2

M2-EP

Hard switching

topologies Flyback

PFC

Chargers / Adapters

/ SilverBox / LED

lighting

M6S

Server / Telecom

600V to 700V600V

Current & Next SJ Technologies Application / Topology Positioning

6

The Ideal SJ MOSFET - PFC

• Current level for a PFC both TM and CCM is linked to the load and the input voltage

• Drain current sweeps wide range

• MOSFET switching characteristics from low to medium current values should be considered for efficiency target

• High current portion has anyhow to be taken into account too for overload condition ad low input voltage

7

HV Power MOSFET Series : MDmesh V

Key Features

• Industry’s lowest RDS(on) in the market



Benefits

• Highest efficiency in the application

• Smaller form factor of final system

• Especially targeted for hard switching

(PFC, Boost, TTF, Flyback)

MDmesh V: the leading technology with outstandingly low RDS(on)

8

The New M2 Series vs MDmesh IIImproved RDS(on) x area

Same Production Cycle-Time

Improved Qg: -30%

Improved Ciss: -15%

Improved Coss profile vs Vds

Gate charge comparison™ – VDD=480V – ID=20A – Ig=1.3mA

STP24N60M2 190mΩ(MAX) 29nC(TYP)

First Super-Junction technology integrating Back-to-Back G-S Zeners

Enhanced immunity vs ESD & Vgs spikes

500V (280 – 530 mohm) 650V (46 mohm – 1.3 ohm)600V (40 mohm – 1.4 ohm)

9

Key features

• Extremely low Qg

• Optimized for light load conditions

• Optimized Vth and Rg values for soft switching

• Body diode ruggedness

Key benefits

• Improved efficiency especially in light load

condition in PFC and resonant topologies (i.e. LLC)

• Reduced switching losses for wide range of load

and input voltage

• Suitable for hard & soft-switching topologies

Mdmesh™ M2 EP SeriesHighly performing 600V devices to boost efficiency in hard & soft switching topologies

5

10

15

20

25

30

35

0 1 2 3 4 5 6 7 8 9 10

Eoff[μЈ]

Id [A]

STP25N60M2-EP

STP24N60M2

Vds

Id

Power

M2

M2-EP

Up to 20% Eoff reduction

10

Working with a new diffusion

process and optimizing the

MDmeshTM M2 vertical structure,

the new product improves the

turn-off behavior towards the

“ideal” switch. Giving an

improved shape of the turn-off

waveforms, the new series M6

represents an evolution of the

M2 series.

Optimized

Original

Ideal

General Description 11

Main benefits

• Especially suitable for Bridge topologies • Improved intrinsic diode reverse recovery time• Higher dV/dt capabilty

• Increased power density in FB & HF(W/inch*2)

• Improved system reliability

• Higher efficiency in bridge topologies

Key Features

Key Benefits

Diode Parameters

Mx

DMx

MDmeshTM Mx

MDmeshTM DMx

DeviceRdon

(max)

(mohm)

Irm

(A)

Ta

(ns)

Tb

(ns)

S

(Tb/Ta)

TRR

(ns)

QRR

(nC)

STW56N60DM2 60 9.2 112 40 0.357 152 815

STW55NM60ND 70 17.6 184 28 0.152 212 1951

-Diode body Drain-Source-@ VR=400V, IF=50A; di/dt=100A/µs, Tc=25°C.

MDmeshTM DMx Series with Fast Recovery Diode

The perfect switch for ZVS , Half and Full bridge converters

12

Main benefits

Leading leg MOSFETs

S1 – S2

Body diode

recovery

Body

diodeMOSFET

channel

Dangerous

condition

Dangerous

condition

Application note

• AN-4720

• AN-2626

Why MOSFET with Fast Recovery Diode

13

Power MOSFETLow Voltage MOSFET

LV MOSFET - STripFET Series

H6 F6

40V - 80V

Load Switch

O-ring

Motor drives

UPS / e-Motor /e-

Bike / Toys / Fan

Control

STB / Motor

Drives for Power

Tools & Drones /

e-Cigar

Computer MB

H7

Sine wave inverter

Motor Drives

DC-DC & Synchronous Rectification

SMPS / SERVER / TELECOM

30V

F7

40V - 150V

Motor Drives / Sync.R /

DC-DC / O-Ring / Primary

Switch / Reverse battery

protection

ForkLift/ Telecom Bricks/ Light Electr. Vehicles/

Solar Inverters/ SMPS for Data Center

Application – Topology Positioning

H8

SiP

SPS

High Freq VRMs

STB / Power

Tools

F8

100V & 150V

Sync.R / DC-DC /

O-Ring / Primary

Switch / BMS

15

STripFET F7 [40V]

• Low on-state resistance

• Extremely low thermal resistance

• High quality & reliability

Q1

2015 2016 2017

STripFET H8 [30V]

• Very low on-state resistance

• Extremely low FoM


Q4

STripFET F7 [150V]


• High current capability

• Extremely low Rth


Q3

STripFET F7 [120V]



• Extremely lowt Rth


Q2

STripFET F8 [40-45V]




STripFET F8 [150V]




Q4

STripFET F8 [80V]




Q2

Q4

STripFET H8 [25V]




Q2

STripFET F8 [100V]




Q4

STripFET H6 [30V]



STripFET F7 [40V]


• SOA/Rdson balance

• ESD and EMI best in class

STripFET F6/F7 [80V]




• Reduced EMI for motor control

STripFET F7 [100V]




• Reduced EMI for motor control

Mass Production

STripFET H7 [30V]

• Schottky diode embedded



Mass Production Development AGVersion: LV16.3.2

Technology Roadmap LV 16

Power MOSFETSilicon Carbide MOSFET

Features Benefits

Industry’s highest temperature

rating of 200 C

• Improved thermal

design, reduced PCB

form factor

Low on-state resistance over

the entire temp range to 200 C

• Reduced cooling

requirements, higher

system efficiency

Significantly reduced switching

losses especially at high

frequency (minimal variation

versus temperature)

• Smaller passive

components, more

compact designs

Simple to drive • Cost-effective drive

Very fast and robust intrinsic

body diode

• No need for external

freewheeling diode, thus

more compact systems

Advantages Vs Competition

Target Applications

• Industrial Drives

• UPS

• Solar Inverter

• EV/HEV

Part NumberVDSS (V) /

Ron(typ) (mΩ)CURRENT Qg Package

SCT10N120 1,200V/400 12A < 21 nC HiP247

SCT20N120 1,200V/169 20A < 45 nC HiP247

SCT30N120 1,200V/80 45A < 105 nC HiP247

SCT50N120 1,200V/52 65A < 122 nC HiP247

Mass Production

SiC MOSFET 1° Gen. Product Enlargement

Part NumberVDSS (V) /

Ron(typ) (mΩ)Package

Samples

availability

SCT1000N170 1,700V/1000 HiP247 Available

SCT20N170 1,700V/100 HiP247 Q4 ‘16

Silicon Carbide MOSFET 1200V Series 18

Efficiency vs frequency in a boost converter

Main Benefits

Impact on passive components:

Less volume

Lower losses on Magnetic

Lower weight

System Cost reduction

SiC MOSFET portfolio

Part Number

VDSS (V) /

Ron(typ)

(mΩ)

Package RemarkSamples

availability

SCTW100N65G2 650V/20 HiP247/ die sellBest Ron Option for

InverterQ4 2016

SCTW90N65G2V

SCTH9065G2V-7650V/25

HiP247

H2PAK-7L

rated 175°C

Low Qg Option for

Charger /

HF ConvertersAvailable

SCTH35N65G2V-7

SCTW35N65G2V650V/50

H2PAK-7 @ 175°C

HiP247 @ 200°C

Low Qg Option for

Charger / HF

ConvertersQ4 2016

• Rdson (@25°C) : 20 mΩ

• Rdson (@200°C) : 26 mΩMDmeshTM M6

MDmeshTM M5

SiC 650V

Main Competitor

Ron vs temperature

Silicon Carbide MOSFET

650V 2nd Gen. Series19

Power MOSFETPackage

(*) Long Lead Version Available

TO247-4

TO-220

TO-220FP TO-3PF

TO-3P

TO-247(*)

MAX247(*)

IPAK

Through Packages Overview for MOSFETs

21

Efficiency comparison

MOSFET portfolio

TO247-4Leads

BVDSS

[V]

RDSon

[mΩ]

ID

[A]P/N Main application

Eng.

Samples

600

40 68 STW70N60M2-4

PV-Inverter,

Server, UPSavailable

55 50 STW56N60M2-4

70 40 STW48N60M2-4

88 34 STW40N60M2-4

650 62 110 STW56N65M2-4Servers, SMPS,

Solaravailable

650

29 84 STW88N65M5-4

PV-Inverter,

Server, UPS available

45 58 STW69N65M5-4

63 42 STW57N65M5-4

98 30 STW38N65M5-4

4L PIN3L PIN

Temperature

Efficiency

∆η=0.34%

Key Features and Benefits

TO247-4 Features:

Kelvin Source PIN to separate power path from

driving signal

Increased creepage between PINs

TO247-4 Benefits:

Lower losses at both turn-off and turn-on

Higher efficiency

Lower working temperature Higher insulation standards

TO247-4 Package 22

Thermal behaviors Test condition

DC/DC Converter

load

Id = 2, 2.5, 2.7

A

fSW = 53kHz, 55kHz, 65kHz

Vin=200Vdc

Vout=17VdcWide Creepage

Key Features and Benefits

+ heatsink

Features:

No need to use insulation paste (Silant)

Wider case Dimension vs TO-220FP standard

Package shared with two other big players in the market

Benefits:

Better throughput for customers in their assembly line

Cost Saving

Possibility to assembly more sizes

Higher Insulation rating

MOSFET portfolio

BVDSS

[V]

RDSon

[Ω]

ID

[A]P/N

Eng. Samples

Datatsheetstatus

600

0,6 8 STFH10N60M2 June ‘16 Sept ‘16

0,38 11 STFH13N60M2 June ‘16 Sept ‘16

0,28 13 STFH18N60M2 June ‘16 Sept ‘16

0,19 18 STFH24N60M2 June ‘16 Sept ‘16

0,088 34 STFH40N60M2 June ‘16 Sept ‘16

1200 0,69 12 STFH12N120K5 June ‘16 Sept ‘16

1500 1,9 7 STFH12N150K5 June ‘16 Sept ‘16

4.25 mm creepage

Wide Creepage Package 23

ST Rectifiers Product Range

B

R

I

D

G

E

S

24

600V/ 650V/ 1200V Diodes Series

and applications

Turn off

conditions

Low dIF/dt

turn off

Application

Discontinuous mode PFC

Secondary rectif

Resonant circuit

(Induction cooking)

Secondary side LLC converter

Technology 600V L series (STTHxL06)600V blank or AC Series

(STTHx06, STTHxAC06)

Hard

switching

Conditions

High dIF/dt

turn off

ApplicationMotor

control

Low Freq PFC, HVAC,

UPS, High freq drive

Hard switching PFC

Secondary rectification

In phase shift converter

High voltage output

Technology

650V/1200V Soft series

(JTHxMC065,

JTHxMC/HC12)

600V blank or AC Series,

1200V Soft,

blank or S Series

(STTHx12,STTHxS12)

600V R series (STTHxR06)

Tandem series (STTHxT06)

600V/650V/1200V SiC series

(STPSCxx)

0 60 10020

Low frequency Medium frequency Higher frequency

25

SiC Performances vs Si Techno

With SiC, we get :

- Best switching performances (fast and soft)

- Best efficiency in hard-switching applications thanks to best turn-off performance

Recovery current dependent on

Tj, IF and dI/dt

IF=8A ; dI/dt=400A/µs ; VR=400V ; Tj=125°C

2A/div ; 10ns/div

SiC 600/650V diode

Tandem G2

Capacitive current

independent of Tj

Tandem G1

Ultrafast diode

Reverse characteristics Power losses

26

Main Topologies Using 600/650V SiC Diodes

600V/650V SiC

single diode

ACAC

650V dual-diodes with

common cathode: save

one package and get

more integration

2 x 650V SiC diodes,

dual-diodes in series:

with high surge

capability

AC

Three SiC configurations available to cover a wide range of topologies

Single Boost PFC Interleaved PFC Bridgeless PFC

27

ST Products and RoadmapTO-247

or DO-247

TO-220AC TO-220AB

dual diodes

common cathode

TO-220AC insulated TO-220AB insulated

dual diodes

in series

D²PAK DPAK

600 V G1

4 A STPSC406D STPSC406B-TR

6 A STPSC606D STPSC606G-TR



12 A STPSC1206D

2 x 10 A STPSC2006CW

650 V G2

4 A STPSC4H065D STPSC4H065DI STPSC4H065B-TR

6 A STPSC6H065D STPSC6H065DI STPSC6H065G-TR STPSC6H065B-TR

8 A STPSC8H065D STPSC8H065DI STPSC8H065G-TR STPSC8H065B-TR

10 A

12A

STPSC10H065D

STPSC12H065D

STPSC10H065DI STPSC10H065G-TR STPSC10H065B-TR

2 x 4 A STPSC8H065CT



2 x 10 A STPSC20H065CW STPSC20H065CT

2 x 650 V G2

6 A STPSC6TH13TI

8A STPSC8TH13TI

10 A STPSC10TH13TI

1200 V

6 A STPSC6H12B-TR1

10 A STPSC10H12D

15 A

20A

STPSC15H12D

STPSC20H12D

28

FERD Diodes

Introduction to FERD Technology

• New rectifier family based on

patented ST technology

• Provide the best in class

VF/IR trade-off not achievable

with standard Power Schottky

technology

Positioning Vs Power

Schottky

SchottkyIR

VF

Same barrier

Different die-sizes

Different barrier

Same die-size

Barrier 1

Barrier 2Barrier 3

Die-size 2

>

Die-size 1

Same die size

Continuously tunable trade-off

IR

VF

Die-size 1

Anode

Cathode

N+

N-

30

• At light load: strong efficiency improvement

• At full load: strong thermal performance improvement & efficiency improvement

• Lower dependency of IRmax versus Tj & Lower leakage current ratio typ/max

=> To get more controlled design & more secure design

FERD 45V:Forward Voltage Characteristic

FERD30M45C vs. STPS3045C31

(AN4021: Calculation of reverse losses in a power diode)

FERD

STPS

[100°c-150°c]

C coeff0.04°C-1

[100°c-150°c]

C coeff0.06°C-1

thermal coefficient “c”

125c

75c

25c

150c

FERD30SM100STPS30M100

FERD30SM100

STPS30M10025c125c

Vplateau = 70 V

Vplateau2 = 20 V

tOFF1 = 2.5 µs

tOFF2 = 5 µs

tON = 7.2 µs

IMax = 10A

Application conditions

Vin = 264V(RMS), Tamb = 40°C,

Vout = 19V, Pout = 45W

FERD30SM100

STPS30M100

STPS41H100C

𝑷(𝑻𝒋) = 𝑷𝒄𝒐𝒏𝒅 𝑻𝒋 + 𝑷𝒓𝒆𝒗(𝑻𝒋)

FERD 100V: 45W Flyback Converter 32

100V FERD vs STPSxxH/S100 qualitative forward characteristics benchmark

33

VF

IF

FERD device STPS device IF approximate

crossing point at

125°C

FERD20S100STG STPS20S100CT ~5A

FERD20H100STG STPS20H100CT ~5A

FERD30H100STG STPS30H100CT ~8A

FERD40H100STG STPS41H100CT ~12AFERDxxH100 STPSxxH100

Vto1Vto2

rd1 rd2

<

>

Flyback working area

Crossing point

FERD & STPS have different characteristics shape,

with different Vto / rd values, linked to different technology

Adaptor 40WComparison FERD vs Schottky

34

FERD Benefits :

- Gain on VF (-50mV)

- Gain on efficiency (+0.3%)

FERDxxH100 is the replacement of STPSxxH100 Schottky

with better price and yield in adapter application

Differentiation Through InnovationFlat / package size reduction

ST Strategy 36

PowerFlat 5x6

SOD128F

2A to 8A SOD123F

SOD323F

< 1A

PSMC

TO-277A

Best in class VF / IR wiith FERD, enables to increase diodes current ratings

Packages downsizing to improve price/performances ratio& PCB cost

Deploy STPS/STTH/FERD available technologies in these packages

5A to 20A

* In development

1 to 3A

20A & more

STPS / FERD

8FL

4.7

2.4

0.98 0.98

3.50

7.95

5.90

2.30

5.35

3.62

5.07

2.57

2.30

(SMAFlat)

(SlimSMA)

(M-Flat)

(S-Flat)

(PMDU)

(G1F)

SODxxx Flat vs Other Packages 37

Key Takeaways

• STMicroelectronics is one of the world's leading suppliers of power

discrete semiconductor devices.

• ST provides the whole set of power devices:

MOSFET, SiC MOSFET, silicon rectifier, SiC diode, IGBT

• ST solution covers the requirements of many power management

applications. It improves the system efficiency, increases power-

density and brings lower-standby power design solutions.

• ST provides the best, complete and optimized power management

solution. It helps end customer to reduce the investigation cost and

reduces the time to market.

38

Thank you!

discrete solution and...

Documents