distributed active decoupling capacitors for on-chip...
TRANSCRIPT
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Distributed Active Decoupling Capacitors for On-Chip Supply Noise Cancellation in Digital VLSI Circuits
Jie Gu, Ramesh Harjani and Chris H. Kim
Department of Electrical and Computer EngineeringUniversity of Minnesota, Minneapolis
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Outline
• Introduction
• Proposed active decap circuits
• Simulated supply noise suppression
• Test chip implementation
• Supply noise measurement results
• Conclusion
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Power Supply Noise• Current density keeps increasing• Wire impedance does not scale as desired• Larger IR and Ldi/dt noise in scaled technology• Causes timing, substrate noise, reliability issues
Technology Generation (nm)130 115 100 90 80 70 60Ti
min
g Im
pact
(%)
02468
1012
M. Saint-Laurent, Intel
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Problematic Decoupling Capacitor• 15% to 20% of die area occupied by decaps in
high-end microprocessor• 10% of total power due to decap leakage
T. Mak, Intel
Total Power @ T=30°C/Vcc=1.15V
Transistor Leakage Decap Leak.20%
10%Active Power
Transistor Gate Leakage
Burn-In Condition @ T=100°C/Vcc=1.61V
80%-75% 20%-25%Leakage Power
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Principle and Design Target
• New circuit technique to boost decap value• Decap area reduction• Self-biasing for implementation in digital IC
A(ω)
Cload (Miller Capacitor)
(A(ω) +1)Cload
VDD VDD
Gnd
−
+
Cload
GndGnd
A(ω)−
+
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Previous Work
Analog Area
• Active decap for crosstalk suppression (T. Tsakada, JSSC, 2005)
• On-chip voltage regulator using switched decaps(M. Ang, ISSCC, 2000)
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Proposed Use of Active Decap in Digital IC
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Design of Active Decap Circuits
• 10MHz~2.7GHz
• Current: 3.8mA
• C-coupled inputs
• Self-biasing
• On/Off switch
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Pdecap
Adecap_10pF
Adecap_20pF
Pdecap10pF20pF40pF80pF120pF150pF
Simulated Decoupling Effects0.18µm, 25°C, 1.8V
• Decap boost 4x ~ 11x up to 1GHz• Small pdecap required for high frequency noise
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Test Chip Organization
• Scan chain to activate each module of circuits• Selection of different values of pdecap and adecap• Adecap sensor to measure differential noise
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Noise Generation CircuitsNoise Injection CircuitsLFSR Circuits
• Capable of adjusting supply noise shape and frequency• Noise injection circuit can produce more ideal noise waveforms for testing purposes
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Supply Noise SensorsGnd sensorVDD sensor
T. Okumoto, VLSI Symp., 2004
• Placed at different locations• Adecap sensor for differential supply noise
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Measurement ResultAdecap Off Adecap On
150MHz150MHz
6dB Reduction
• Noise injection circuit clocked at 150MHz• Resonant supply noise at 70MHz• 6dB reduction of supply noise using adecap
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0 0.1 0.2 0.3
-0.05
0
0.05
Gnd
(V)
0 0.1 0.2 0.3
1.75
1.8
1.85
VDD
(V)
0 0.1 0.2 0.30
0.5
1
t (µs)
Diff
. Noi
se (V
)
w/o Decap 10pF Adecap
w/o Decap 10pF Adecap
w/o Decap 10pF Adecap
Measurement Results: Supply Noise Waveform
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Measured Decoupling Effect: Pdecap vs Adecap
(Noise generated by LFSR circuits)
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Local Supply Noise Measurement
• Larger noise at location closer to noise source
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Switching On/Off Active Decaps
• Ton ~ 200ns (can be improved to less than 10ns)• Toff < 10ns
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Die Photograph
Technology 0.18µmVDD 1.8V
Passive Decap (10pF) 44µm×41µm
Active Decap (10pF)25µm×44µm
(40% reduction)
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Conclusions• Passive decap occupies large area and
consumes gate tunneling leakage
• Self-biased active decoupling capacitor circuits proposed to boost decapperformance
• 4x ~ 11x boost in decap value up to 1GHz with 40% area saving
• Decap gating capability was tested for power saving