dominant tm opto technologies domiled · 2020. 10. 12. · ddw-hzkg-w2x-f1h3 ddw-hzkg-xy1-i1l3...

20/07/2018 V3.01

Features:> High brightness surface mount LED.> Based on InGaN / Sapphire technology.> 120° viewing angle.> Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to IR reflow soldering.> Environmental friendly; RoHS compliance.> Superior corrosion resistant.> Compliance to automotive standard; AEC-Q101.

DomiLEDSynonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.

DATASHEET:

DomiLEDInGaN White : DDW-HZKG-F1P3

© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.

Applications:> Automotive: interior applications, eg: switches, telematics,climate control system, dashboard, etc.> Automotive: exterior applications, eg: licensed plate lamp, position lamp.

DOMINANTOpto TechnologiesInnovating Illumination

TM

20/07/2018 V3.02

DDW-HZKG-W2X-F1H3

DDW-HZKG-XY1-I1L3

DDW-HZKG-XY1-M1P3

White

White

White

120

120

120

1400.0

1800.0

1800.0

Part OrderingNumber

Color ViewingAngle˚

Luminous Intensity @ 20mA IV (mcd) Appx. 1.1

Min. (V)Vf @ If = 20mA Appx. 3.1

Electrical Characteristics at Tj=25˚C

Max. (V)Part Number

DDW-HZKG 2.8 3.3

Typ. (V)

3.0

Optical Characteristics at Tj=25˚C

Min. Typ. Max.

2100.0

2400.0

2400.0

2850.0

3550.0

3550.0

Unit

Absolute Maximum RatingsMaximum Value

DC forward current

Peak pulse current; (tp ≤ 1ms, Duty cycle = 0.1)

Reverse voltage

ESD threshold (HBM)

LED junction temperature

Operating temperature

Storage temperature

Thermal resistance- Real Thermal Resistance Junction / ambient, Rth JA real Junction / solder point, Rth JS real - Electrical Thermal Resistance Junction / ambient, Rth JA el Junction / solder point, Rth JS el (Mounting on FR4 PCB, pad size >= 16mm2 per pad)

50

125

Not for reverse bias

8000

125

-40 … +115

-40 … +125

300140

260120

mA

mA

V

V

˚C

˚C

˚C

K/WK/W

K/WK/W

DDW-HZKG-F1P3DOMINANTOpto TechnologiesInnovating Illumination

TM

20/07/2018 V3.03

DDW, White Color Grouping Appx. 2.1

Color Bin Structure

Bin0.24980.20530.24020.21080.22690.21850.25970.22040.25090.22640.23880.23480.27000.23610.26240.24310.25200.2527

CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy

0.25890.20000.24980.20530.23880.23480.26820.21460.25970.22040.25090.22640.27750.22920.27000.23610.26240.2431

0.26820.21460.25970.22040.25090.22640.27750.22920.27000.23610.26240.24310.28610.24270.27970.25090.27330.2590

0.25970.22040.25090.22640.24020.21080.27000.23610.26240.24310.25200.25270.27970.25090.27330.25900.26460.2700

1 2 3 4

F1

F2

F3

G1

G2

G3

H1

H2

H3


TM

0.18

0.20

0.22

0.24

0.26

0.28

0.30

0.32

0.34

0.36

0.38

0.40

0.42

0.44

0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 0.34 0.36 0.38

L

12

K

J

H

N

M

3

P

F

I

G

20/07/2018 V3.04

Bin0.27970.25090.27330.25900.26460.27000.28980.26640.28480.27570.27800.28830.30070.28300.29710.29350.29220.30770.31130.29920.30900.31080.30600.32660.32190.31540.32090.32810.31960.34510.33350.31720.33390.33360.33410.34720.34470.33470.34650.35300.34790.3673

CxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCyCxCy

0.28610.24270.27970.25090.27330.25900.29500.25680.28980.26640.28480.27570.30450.27170.30070.28300.29710.29350.31380.28620.31130.29920.30900.31080.32310.30080.32190.31540.32090.32810.33390.33360.33410.34720.33450.36540.34650.35300.34790.36730.34980.3863

0.29500.25680.28980.26640.28480.27570.30450.27170.30070.28300.29710.29350.31380.28620.31130.29920.30900.31080.32310.30080.32190.31540.32090.32810.33350.31720.33390.33360.33410.34720.34650.35300.34790.36730.34980.38630.35990.37350.36230.38820.36550.4079

0.28980.26640.28480.27570.27800.28830.30070.28300.29710.29350.29220.30770.31130.29920.30900.31080.30600.32660.32190.31540.32090.32810.31960.34510.33390.33360.33410.34720.33450.36540.34470.33470.34650.35300.34790.36730.35670.35350.35990.37350.36230.3882

1 2 3 4

I1

I2

I3

J1

J2

J3

K1

K2

K3

L1

L2

L3

M1

M2

M3

N1

N2

N3

P1

P2

P3

InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance. Current pulsing should be used for dimming purposes.


TM

20/07/2018 V3.05

W2X1X2Y1

1400.0 ... 1800.01800.0 ... 2240.02240.0 ... 2850.02850.0 ... 3550.0

Luminous Intensity Group at Tj=25˚C

Forward Voltage (V) Appx. 3.1

Vf Binning (Optional)

Vf Bin @ 20mA

Please consult sales and marketing for special part number to incorporate Vf binning.

VH8

VH9

VJ1

2.80 ... 3.00

3.00 ... 3.20

3.20 ... 3.40

Brightness Group Luminous Intensity Appx. 1.1

IV (mcd)


TM

20/07/2018 V3.06

Forward Current Vs Forward VoltageIF = f(VF); Tj = 25°C

Forward Voltage VF (V)Forward Current IF (mA)

Forw

ard

Cur

rent

I F (m

A)

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Luminous Intensity Vs Forward CurrentIV/IV(20mA) = f(IF); Tj = 25°C

Forw

ard

Cur

rent

I F (m

A)

Temperature T(°C)

Maximum Current Vs TemperatureIF=f(T)

Forward Current IF (mA)

Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C

Relative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 20mA

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Wavelength λ (nm)

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )

Duty Ratio, %

Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 1ms )

∆Cx,

∆C

y

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45

50

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6

Rel

ativ

e Lu

min

ous

Flux

Фre

l

Forw

ard

Cur

rent

I F(m

A)


Relative Lumionous Flux Vs Forward CurrentIV/IV(20mA) = f(IF); Tj = 25°C


Forward Voltage VF (V)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

350 400 450 500 550 600 650 700 750 800 850

Rel

ativ

e Lu

min

ous

Flux

Фre

lRelative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 20mA

Wavelength λ (nm)

Forw

ard

Cur

rent

I F(m

A)

Maximum Current Vs TemperatureIF = f (T)

Temperature T(°C)

TS

0

10

20

30

40

50

60

0 20 40 60 80 100 120

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )

Allowable Forward Current Vs Duty Ratio ( Tj = 25°C; tp ≤ 10μs )

Duty Ratio, %

10

100

1000

0.1 1 10 100

TA = Ambient TemperatureTS = Solder Point Temperature

TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45

50

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6

Rel

ativ

e Lu

min

ous

Flux

Фre

l

Forw

ard

Cur

rent

I F(m

A)





0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

350 400 450 500 550 600 650 700 750 800 850

Rel

ativ

e Lu

min

ous

Flux

Фre

l


Wavelength λ (nm)

Forw

ard

Cur

rent

I F(m

A)


Temperature T(°C)

TS

0

10

20

30

40

50

60

0 20 40 60 80 100 120

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )


Duty Ratio, %

10

100

1000

0.1 1 10 100


TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45

50

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6

Rel

ativ

e Lu

min

ous

Flux

Фre

l

Forw

ard

Cur

rent

I F(m

A)Forward Current IF (mA)




0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

350 400 450 500 550 600 650 700 750 800 850

Rel

ativ

e Lu

min

ous

Flux

Фre

l


Wavelength λ (nm)

Forw

ard

Cur

rent

I F(m

A)


Temperature T(°C)

TS

0

10

20

30

40

50

60

0 20 40 60 80 100 120

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )


Duty Ratio, %

10

100

1000

0.1 1 10 100


TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45

50

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6

Rel

ativ

e Lu

min

ous

Flux

Фre

l

Forw

ard

Cur

rent

I F(m

A)





0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

350 400 450 500 550 600 650 700 750 800 850

Rel

ativ

e Lu

min

ous

Flux

Фre

lRelative Spectral EmissionIrel = f(λ); Tj = 25°C; IF = 20mA

Wavelength λ (nm)

Forw

ard

Cur

rent

I F(m

A)


Temperature T(°C)

TS

0

10

20

30

40

50

60

0 20 40 60 80 100 120

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )


Duty Ratio, %

10

100

1000

0.1 1 10 100


TA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0 5 10 15 20 25 30 35 40 45 500

5

10

15

20

25

30

35

40

45

50

2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6

Rel

ativ

e Lu

min

ous

Flux

Фre

l

Forw

ard

Cur

rent

I F(m

A)





0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

350 400 450 500 550 600 650 700 750 800 850

Rel

ativ

e Lu

min

ous

Flux

Фre

l


Wavelength λ (nm)

Forw

ard

Cur

rent

I F(m

A)Maximum Current Vs Temperature

IF = f (T)

Temperature T(°C)

TS

0

10

20

30

40

50

60

0 20 40 60 80 100 120

Allo

wab

le F

orw

ard

Cur

rent

I F( m

A )


Duty Ratio, %

10

100

1000

0.1 1 10 100


TA


TM

-0.04

-0.03

-0.02

-0.01

0.00

0.01

0.02

0.03

0.04

0 5 10 15 20 25 30 35 40 45 50-0.80

-0.60

-0.40

-0.20

0.00

0.20

0.40

0.60

0.80

0 10 20 30 40 50

Rela

tive

Wav

elen

gth λ r

el

Relative Wavelength Shift Vs Forward Current


∆Cx,

∆Cy

Chromaticity Coordinate Shift Vs Forward Current∆Cx, ∆Cy = f(IF);Tj = 25°C


∆Cx

∆Cy

Redundant

20/07/2018 V3.07

Radiation Pattern

Junction Temperature Tj(°C)

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F (

V)

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =20mA


Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA


∆Cx

, ∆C

yChromaticity Coordinate Shift Vs Junction Temperature

∆Cx, ∆Cy = f(Tj); IF = 20mA

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 130 1500.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -30 -10 10 30 50 70 90 110 130 150

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF = 50mA


Rel

ativ

e Lu

min

ious

Flu

x Ф

rel

Relative Luminious Flux Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA


-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 130 1500.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50 -30 -10 10 30 50 70 90 110 130 150

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)



Rel

ativ

e Lu

min

ious

Flu

x Ф

rel

Relative Luminious Flux Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA


-10.0

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

-50 -30 -10 10 30 50 70 90 110 130 150-0.05

-0.04

-0.03

-0.02

-0.01

0.00

0.01

0.02

0.03

0.04

0.05

-50 -30 -10 10 30 50 70 90 110 130 150

Rel

ativ

e W

avel

engt

h ∆λ

dom

(nm

)

Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA

∆Cx,

∆C

y

Chromaticity Coordinate Shift Vs Junction Temperature∆Cx, ∆Cy = f(Tj); IF = 20mA

Junction Temperature Tj(°C) Junction Temperature Tj(°C)

∆Cy

∆Cx

Redundant


TM

08/12/2016 V7.09

InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination

TM

Radiation Pattern


Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F (

V)


Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Luminous Intensity Vs Junction TemperatureIV/IV(25°C) = f(Tj); IF = 20mA


∆Cx

, ∆C



0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 1300.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)



Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

-0.5

-0.4

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50 70 90 110 1300.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e Fo

rwar

d Vo

ltage

∆V F

(V)



Relative Luminous Intensity Vs Junction TemperatureIV /IV (25°C) = f(Tj); IV = 20mA

Rel

ativ

e Lu

min

ous

Inte

nsity

I rel

Relative Forward Voltage Vs Junction Temperature∆VF = VF - VF(25°C) = f(Tj); IF =20mA

-10.0

-8.0

-6.0

-4.0

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

-50 -30 -10 10 30 50 70 90 110 130

∆Cx

∆Cy

-0.030

-0.025

-0.020

-0.015

-0.010

-0.005

0.000

0.005

0.010

0.015

0.020

0.025

0.030

-50 -30 -10 10 30 50 70 90 110 130

Rel

ativ

e W

avel

engt

h ∆λ

dom

(nm

)

Relative Wavelength Vs Junction Temperature∆λdom = λdom - λdom (25°C) = f(Tj); IF = 20mA

∆Cx,

∆C




20/07/2018 V3.08

DomiLED • InGaN White: DDW-HZKG-F1P3 Package Outlines

Note: Package is Pb-free.

Materials

Lead Frame

Housing

Encapsulant

Lead-finishing

Materials

Cu Alloy With Au Plating

High temperature resistant plastic, PPA

Silicone Resin

Au Plating

09/12/2016 PV3.08

DomiLED

Note: Package is Pb-free.

Materials

Lead Frame

Housing

Encapsulant

Lead-finishing

Materials

Cu Alloy With Au Plating

High temperature resistant plastic, PPA

Silicone Resin

Au Plating

Note : Primary thermal path is through Cathode lead of LED package


TM Preliminary DraftThis specification does not constitute a final offer


TM

20/07/2018 V3.09

Recommended Solder Pad

09/12/2016 PV3.09

Recommended Solder Pad




TM

20/07/2018 V3.010

Taping and orientation

• Reels come in quantity of 2000 units.• Reel diameter is 180 mm.

09/12/2016 PV3.010





09/12/2016 PV3.010






TM

20/07/2018 V3.011

Packaging Specification


TM

08/12/2016 V7.013


InGaN Warm White: DDF-LJGDOMINANTOpto TechnologiesInnovating Illumination

TM

20/07/2018 V3.012


TM


Average 1pc DomiLED 1 completed bag (2000pcs)

Weight (gram)Weight (gram) 0.034 240 ± 10

Dimensions (mm)

190 ± 10Weight (gram)Packing Box 210 x 210 x 16

CardboardBoxDOMINANT

TM

Dimensions (mm) Empty BoxWeight (kg)

Super Small

Small

Medium

Large

For DomiLED

Reel / BoxCardboard BoxSize

325 x 225 x 190

325 x 225 x 280

570 x 440 x 230

570 x 440 x 460

0.38

0.54

1.46

1.92

9 reels MAX

15 reels MAX

60 reels MAX

120 reels MAX

Barcode Label

Barcode Label

Packing Sealing Label

Moisture sensitivity level

Moisture absorbent material +Moisture indicator

The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag

Reel

Barcode label

Label

(L) Lot No : lotno

(P) Part No : partno

(C) Cust No : partno

(G) Grouping : group

(Q) Quantity : quantity

(D) D/C : date code

(S) S/N : serial no

DOMINANT Opto TechnologiesML TEMP2 260˚CRoHS Compliant

Made in Malaysia

20/07/2018 V3.013

Time (sec)0 50 100 150 200

300

250

225

200

175

150

125

100

75

50

25

275

Tem

pera

ture

(˚C

)Classification Reflow Profile (JEDEC J-STD-020C)

Ramp-up3˚C/sec max.

255-260˚C10-30s

60-150s

Ramp-down

6˚C/secmax.

Preheat 60-180s

480s max

217˚C

Recommended Pb-free Soldering Profile


TM

20/07/2018 V3.014

Appendix

1) Brightness:

1.1 Luminous intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded

uncertainty of ± 11 % (according to GUM with a coverage factor of k=3).

1.2 Luminous flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded


1.3 Radiant intensity is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded


1.4 Radiant flux is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 8 % and an expanded uncertainty

of ± 11 % (according to GUM with a coverage factor of k=3).

2) Color:

2.1 Chromaticity coordinate groups are measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.005 and

an expanded uncertainty of ± 0.01 (accordingly to GUM with a coverage factor of k=3).

2.2 Dominant wavelength is measured at current pulse 25 ms(typ) with an internal reproducibility of ± 0.5nm and an

expanded uncertainty of ± 1nm (accordingly to GUM with a coverage factor of k=3).

3) Voltage:

3.1 Forward Voltage, Vf is measured when a current pulse of 8 ms(typ) with an internal reproducibility of ± 0.05V and an

expanded uncertainty of ± 0.1V (accordingly to GUM with a coverage factor of k=3).

4) Typical Values:

4.1 At special conditions of LED manufacturing processes, typical data or calculated correlations of technical parameters

only reflect the statistical figures. But not necessarily correspond to the actual parameters of each single product, which

could differ from the typical data or calculated correlations or the typical characteristic line. These typical data may

change whenever technical improvements happen.

5) Tolerance of Measure

5.1 Unless otherwise noted in drawing, tolerances are specified with ± 0.1 and dimension are specifiec in mm.


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Revision History

NOTE

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT

Opto Technologies does not assume any liability arising out of the application or use of any product described herein.

DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function

or design.

DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems

without the express written approval from the Managing Director of DOMINANT Opto Technologies.

Page Subjects Date of Modification

20/07/2018 V3.015

-

6

1, 12, 14

Initial release

Typo Error on Graph: Chromaticity Coordinate Shift Vs Forward Current

Update Product PhotoUpdate Packaging Specification

Update Appendix

10 Feb 2017

08 Mar 2017

20 Jul 2018


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About Us

DOMINANT Opto Technologies is a dynamic company that is amongst the world’s leading automotive LED manu-facturers. With an extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing and development capabilities have become a trusted and reliable brand across the globe. More in-formation about DOMINANT Opto Technologies, a ISO/TS 16949 and ISO 14001 certified company, can be found under http://www.dominant-semi.com.

Please contact us for more information:

DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]


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