dominant tm opto technologies mini domiledtm innovating …€¦ · ingan : dnzp-djg-i1 about us...

21/04/2014 V2.01

Features:> High brightness surface mount LED.> Based on InGaN technology.> 120° viewing angle.> Small package outline (LxWxH) of 2.0 x 1.4 x 1.3mm.> Qualified according to JEDEC moisture sensitivity Level 2.> Compatible to both IR reflow soldering.> Environmental friendly; RoHS compliance.

Mini DomiLEDTM

With the intense colors that seem to glow with energy and its significant brightness, Mini DomiLEDTM white LED is a highly reliable design device. Its dynamic nature makes it perfect choice for lighthing applications, office and home applications and standard industrial applications.

DATA SHEET:

Mini DomiLEDTM

InGaN : DNZP-DJG-I1

© 2005 DomiLED is a trademark of DOMINANT Opto Technologies.All rights reserved. Product specifications are subject to change without notice.

Applications:> Automotive: interior applications, eg: switches, telematics, climate control system, dashboard, etc.> Communication: indicator and backlight in mobilephone.> Display: full color display video notice board.> Industry: white goods (eg: Oven, microwave, etc.).

DOMINANTOpto TechnologiesInnovating Illumination

TM

21/04/2014 V2.02

InGaN : DNZP-DJG-I1

Part OrderingNumber

Color ViewingAngle˚

Luminous Intensity @ IF = 10mA IV (mcd)

NOTE1. All part number above comes in a quantity of 3000 units per reel.2. Other luminous intensity groups are also available upon request.3. Luminous intensity is measured with an accuracy of ± 11%.4. Color binning is carried for all units as per the color binning table. Only one color group is allowed for each reel.

DNZP-DJG-RS1-1-I1 InGaN Pure Green 120 112.5

Electrical Characteristics at Tj=250CVf @ If = 10 mA

3.0

Forward Voltage, Vf is measured with an accuracy of ± 0.1 V.

Part NumberMin. (V) Typ. (V) Max. (V)

DNZP-DJG 2.7 3.5

Optical Characteristics at Tj=250C

Min. Typ. Max.

180.0 224.0

Unit

Absolute Maximum RatingsMaximum Value

DC forward current

Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005)

Reverse voltage

ESD threshold (HBM)

LED junction temperature

Operating temperature

Storage temperature

Power dissipation (at room temperature)

Thermal resistance- Junction / ambient, Rth JA- Junction / solder point, Rth JS(Mounting on FR4 PCB, pad size >= 5 mm2 per pad)

20

100

5

2000

110

-40 … +100

-40 … +100

70

530280

mA

mA

V

V

˚C

˚C

˚C

mW

K/WK/W


TM

Vr @ Ir = 10 µA

5.0

Min. (V)

21/04/2014 V2.03

InGaN : DNZP-DJG-I1DOMINANTOpto TechnologiesInnovating Illumination

TM

CharacteristicsSymbol Part Number Value Unit

Temperature coefficient of VF (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of IV (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of Cx (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

Temperature coefficient of Cy (typ)IF = 10mA; 0 ˚C <= T <= 100 ˚C

TCV

TCIV

TCCx

TCCy

DNZP-DJG

DNZP-DJG

DNZP-DJG

DNZP-DJG

-2.0

-0.28

0.00002

-0.00003

mV / K

% / K

Cx / K

Cy / K

0.500

0.550

0.600

0.650

0.700

0.300 0.350 0.400 0.450

A

B

21/04/2014 V2.04


TM

DNZP, White Color Grouping

Bin

A

B

0.35170.64520.37310.6245

Cx Cy Cx Cy

0.34890.59830.36710.5804

0.36710.58040.38510.5620

0.37310.62450.39450.6036

Dominant White Bin Structure

Chromaticity coordinate groups are measured with an accuracy of ± 0.01.

1 2 3 4

Dominant color coordinate is measured with an accuracy of ± 0.01.

R1R2S1

112.50 ... 140.00140.00 ... 180.00180.00 ... 224.00

Brightness Group Luminous Intensity IV (mcd)

Luminous Intensity Group at Tj=25˚C

Luminous intensity is measured with an accuracy of ± 11%.


TM

21/04/2014 V2.05

21/04/2014 V2.06

InGaN : DNZP-DJG-I1

Relative Luminous Intensity Vs Forward Current

Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4

Forward Current Vs Forward Voltage

Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50

Maximum Current Vs Ambient Temperature

Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25

Relative Intensity Vs. Wavelength

Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Radiation Pattern

0.270°

90°

80°

0

60°

50°

40°

30° 20°

0.6

0.4

1.0

0.8

10° 0°


TM

Relative Intensity Vs Forward Current

Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 5m

A

0 10 20 30 40 50

0

1

2

3

4

5

6

7

8


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25

Relative Intensity Vs Wavelength

Wavelength; nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Relative Luminous Intensity Vs Forward Current

Forward Current, mA

Rel

ativ

e In

tens

ity

0 10 20 30 40 50

0

0.4

0.8

1.2

1.6

2

2.4


Forward Voltage, V

Forw

ard

Cur

rent

, mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient temperature

Forw

ard

Cur

rent

, If

0 10 20 30 40 50 60 70 80 90 100

5

10

15

20

25

Relative Intensity Vs. Wavelength

Wavelength, nm

Rel

ativ

e In

tens

ity

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 20m

ARelative Intensity Vs Forward Current

Forward Current; mA

Rel

ativ

e In

tens

ity; N

orm

aliz

ed a

t 10m

A

0 10 20 30 40 50

0

1

2

3

4


Forward Voltage; V

Forw

ard

Cur

rent

; mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Ambient Temperature

Forw

ard

Cur

rent

; mA

0 10 20 30 40 50 60 70 80 90 100

0

5

10

15

20

25

Dominant Wavelength Shift Vs Forward Current

Forward Current, mA

0 5 10 15 20 25 30

-4

-2

0

2

4

6

8

10

12


Wavelength, nm

400 450 500 550 600 650 700 750 800

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1


Forward Voltage, V

Variables

IF mA

2 2.5 3 3.5 4

0

10

20

30

40

50


Wavelength, nm

Variables

Relative Intensity

350 400 450 500 550 600 650 700 750 8000

0.10.20.30.40.50.60.70.80.9

1

InGaN : DNZP-DJG-I1

21/04/2014 V2.07

Mini DomiLEDTM • InGaN : DNZP-DJG-I1 Package Outlines


TM

Material

Material

Lead-frame

Package

Encapsulant Soldering Leads

Cu Alloy With Ag Plating

High Temperature Resistant Plastic, PPA

Silicone

Sn Plating

21/04/2014 V2.08

InGaN : DNZP-DJG-I1

Recommended Solder Pad


TM

DOMINANT Semiconductors

11/05/10 Mini DomiLED InGaN White DNW-DZJG - Catalogue-pv3 Page 5 of 9

PRELIMINARY UNDER DEVELOPMENT

Engineering reference data are not verified. The specifications are subject to change without notice.

Recommended Solder Pad

21/04/2014 V2.09

Taping and orientation

• Reels come in quantity of 3000 units.• Reel diameter is 180 mm.


TM

DOMINANT Semiconductors

11/05/10 Mini DomiLED InGaN White DNW-DZJG - Catalogue-pv3 Page 7 of 9

PRELIMINARY UNDER DEVELOPMENT

Engineering reference data are not verified. The specifications are subject to change without notice.

Taping And Orientation. Reels come in quantity of 3000 units.

Reel diameter is 180 mm.

21/04/2014 V2.010

Packaging Specification


TM

21/04/2014 V2.011

Packaging Specification

Average 1pc Mini DomiLED 1 completed bag (3000pcs)

0.034 190 ± 10Weight (gram)

CardboardBox

Dimensions (mm) Empty BoxWeight (kg)

300 x 250 x 250

416 x 516 x 476

15 reels MAX

96 reels MAX

Small

Large

For Mini DomiLEDTM

Reel / Box Quantity / Box (pcs)Cardboard BoxSize

0.58

1.74

45,000 MAX

288,000 MAX

Weight (gram) 0.007 140 ± 10

InGaN : DNZP-DJG-I1

DOMINANT TM

D/C: date codeS/N : serial no

GROUP : group

QTY : product quantity per reel

PART NO : partno

LOT NO : lotno

Moisture sensitivity level

Moisture absorbent material +Moisture indicator

The reel, moisture absorbent material and moisture indicator aresealed inside the moisture proof foil bag

Reel

Barcode label

DOMINANT ROHS Compliant

PB Free

Label


TM

21/04/2014 V2.012

Time (sec)0 50 100 150 200

300

250

225

200

175

150

125

100

75

50

25

275

Tem

pera

ture

(˚C

)Classification Reflow Profile (JEDEC J-STD-020C)

Ramp-up3˚C/sec max.

255-260˚C10-30s

60-150s

Ramp-down

6˚C/secmax.

Preheat 60-180s

480s max

217˚C

Recommended Pb-free Soldering Profile


TM

Revision History

Page

-

2, 3

Subjects

Initial Release

Add Thermal ResistanceAdd Characteristics

Date of Modification

24 Jan 2014

21 Apr 2014

InGaN : DNZP-DJG-I1

21/04/2014 V2.013


TM

NOTE

All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT

Opto Technologies does not assume any liability arising out of the application or use of any product described herein.

DOMINANT Opto Technologies reserves the right to make changes to any products in order to improve reliability, function

or design.

DOMINANT Opto Technologies products are not authorized for use as critical components in life support devices or systems

without the express written approval from the Managing Director of DOMINANT Opto Technologies.

InGaN : DNZP-DJG-I1

About Us


TM

DOMINANT Opto Technologies is a dynamic Malaysian Corporation that is among the world’s leading SMT LED Manufacturers. An excellence – driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certifi ed quality assurance acclaim, DOMINANT’s extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT’s state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Opto Technologies can be found on the Internet at http://www.dominant-semi.com.


TM

Please contact us for more information:

DOMINANT Opto Technologies Sdn. BhdLot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia.Tel: +606 283 3566 Fax: +606 283 0566E-mail: [email protected]

dominant tm opto technologies mini domiledtm innovating …€¦ · ingan : dnzp-djg-i1 about us...

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