Download - ASPICs for High Energy Physics Applications
TIPP 2014 DGB et al. 1
ASPICs for High Energy Physics Applications
Deepak Gajanana, Martin van BeuzekomNikhef (National Institute for Subatomic Physics), Amsterdam
Xaveer LeijtensEindhoven University of Technology, Eindhoven
4-06-2014
TIPP 2014 DGB et al. 2
Contents
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1. Introduction2. Generic Integration Technology (InP)
◦ Example photonic ICs◦ Application in HEP experiments
“An Application Specific Photonic Integrated Circuit integrates multiple optical components like sources, detectors, modulators etc. to save area, cost, power and add more functionality.”
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Optical Waveguide
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Simulated mode distribution
2 m m
0.6 m m
Scanning Electron Microscope (SEM)
photograph
InGaAsP (1.3)
InP
InP
Materials could be Si, Binary, Ternary and Quaternary semiconductors.Indium Phosphide (InP) in combination with InGaAsP has advantages of making light sources, detectors and other circuits at 1550 nm (3rd generation telecom wavelength).
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Waveguide fabrication process
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InP-substrate
InGaAsP InP
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Optical Waveguide
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75 μm
human hair
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Arrayed Waveguide Grating (AWG) COBRA 1988
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Smit, El. Lett, 1988
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MMI (Multi Mode Interference) Couplers
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Simulated pattern
Experimentally imaged pattern
Geometry of MMI-couplers
Acts as power splitter/combiner.Various power ratios possible.
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n-type
Intrinsic E-field
p-type
n-type
Intrinsic E-field
p-type
Mach Zehnder Switch
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-25
-20
-15
-10
-5
0
0 2 4 6 8
Tran
smis
sion
(dB
)
Reverse Bias (V)
bar cross
Electric field changes the refractive index and hence the phase change of the optical wave
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Photonic Integration with basic building blocks
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waveguide
curve
AWG-demux
MMI-coupler
optical amplifier detector
converter, ultrafast switch
picosecond pulse laser
multiwavelength laser
phase modulator
amplitude modulator
2x2 switch
WDM OXC
Passive Phase Amplitude
MMI-reflector
Fabry-Perot laser
waveguide
curve
AWG-demux
MMI-coupler
optical amplifier detector
converter, ultrafast switch
picosecond pulse laser
multiwavelength laser
phase modulator
amplitude modulator
2x2 switch
WDM OXC
Passive Phase Amplitude
MMI-reflector
Fabry-Perot laser
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Moore’s law for InP based PICs
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1985 1990 1995 2000 2005 20101
10
100
1000
Com
pone
nt C
ount
Zirngibl94Joyner95
Herben99
Steenbergen96
Nagarajan06
Amersfoort93
35Photonics04
Tolstikhin03
Menezo99
Kikuchi01
Smit88
Yoshikuni02Nagarajan05M
estric00
Nicholes09
Soares10
Takahashi90
Dragone91
Ishii98
Kaiser94
Cremer91
AWG-based devices
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Moore’s law for InP based PICs
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1
10
100
1000
1985 1990 1995 2000 2005 2010
Com
pone
nt C
ount
Herben99
Nagarajan06
Amersfoort93
Kikuchi01
Smit88
Nicholes09
Soares10
Kaiser94
Cremer91
1 mm
Steenbergen8x20 GHz WDM receiverPTL, 1996
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Moore’s law for InP based PICs
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1
10
100
1000
1985 1990 1995 2000 2005 2010
Com
pone
nt C
ount
Herben99
Nagarajan06
Amersfoort93
Kikuchi01
Smit88
Nicholes09
Soares10
Kaiser94
Cremer91
Infinera 10x10 Gb/s WDM TRXInfinira 10x10 Gb/s WDM TRX 2005, 51 components
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Moore’s law for InP based PICs
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1
10
100
1000
1985 1990 1995 2000 2005 2010
Com
pone
nt C
ount
Herben99
Nagarajan06
Amersfoort93
Kikuchi01
Smit88
Nicholes09
Soares10
Kaiser94
Cremer91
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What Next?
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1
10
100
1000
10000
100000
1000000
1980 1990 2000 2010 2020 2030
Com
pone
nt co
unt
UCD
UCSB
Infinera
Metro
Alcatel/Opto+
Philips/COBRA
HHI
Siemens
Lucent/Bell Labs
NTT
COBRA/35P
Commercial
Advantages : Integrating more functionality, reducing size and reducing cost
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Photonic IC Generic Integration platform
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optical amplifierphase modulator
Phase Amplitude
polarization converter
Polarization
waveguide
Passive
New design
Powerful layouttools
Powerful circuit simulation tools
Designs from designers using the same platform
Application
PhotonicsDesign Manual
A designer Multi-project wafer
Device back to users
Wafer fab
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History repeats itself…
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MPC79, Lynn Conway
Silicon electronic ICs1979
Indium phosphide photonic ICs2012
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Examples of ASPICs and applications
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External modulation technique
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Modulators form the heart of the external modulation technique.
InPMetal
Data arm
Databar arm
Laser input
Light output
Mach Zehnder (MZ) Modulator
Optical modulator
Continuous waveinjection laser
Photo diode Amplification
Digital read-out Chip
Modulation Data acquisition & processing
CW Laser
Data
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KM3NeT is a cubic kilometer neutrino telescope to be installed in the Mediterranean sea. For more information : www.km3net.org
High density data readout in remote submarine conditions. Savings in area, cost and power motivate innovation, research and
development of ASPICs.
KM3NeT Detector concept
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320m
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Concept for 80 Channels with Overlay DWDM*
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Shore station
50/50
APD
Lasers
VOA on/off C1
λ1-80
C λ82
SMA
SMA
C2
λ1
C2
C2
12
λ1
D1
C λ1-80
D2
λ1
λ20
DOM
50-200 GHz
200 GHz DWDM DU-String
C - Band
C-Band
λ80
REAM
2xCu DOM
PIN
λC
λ82
C-Band 1528-1568 nmL-Band 1568-1610 nm
50 GHz200 GHz
λC1-80
….
200 GHz
λC1,5…80 + λC 82
….
MOD + Drivers
LiNbO3
LiNbO3
1:4C - Band
1:20
20 x1 λc
@1.25 Gbps(Downstream Data)
100 km
80 λC @1.25 Gbps
(Upstream Data)
80 λC CWA2
A1
A3
Secondary Junction Box
OTDR Timing mode
Junc
tion
Box
*R&D on high density data readout. Explored as an option - Not used in the project presently.
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Continuous wave light (one of the 20 wavelengths separated at 200 GHz ) is separated from the slow control data.
The slow control data is detected by the photodiode and provided to the electronics.
The data from the sensors (effective data rate ~1.25 Gbps upstream) modulates the CW light and is reflected.
Aim is to integrate the building blocks (AWG, Modulator and PD) on a single die.
InP based Colorless transceiver for KM3NeT
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AWG
AWG
Reflective Modulator1 x 21
21 x 1
λx
λ1
PDDOM
Elec
trica
l Dom
ain
20λ
λ1+λx
λx can be any of the 20 wavelengths
REAM
2xCuDOM
PIN
λC
λ82
will replace
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InP based Colorless transceiver for KM3NeT
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Reflective circuit
Test structures
Transmissive circuit
AWG
Reflective Modulator
1 x 21 λx
λ1
PDDOM Elec
trica
l Do
mai
n
λ1+λx
λx can be any of the 20 wavelengths
Reflective Modulator
SOA
SOA
SOA
AWG
Transmissive Modulator
1 x 21 λx
λ1
PDDOM Elec
trica
l Do
mai
n
λ1+λx
λx can be any of the 20 wavelengths
Transmissive Modulator
SOA
SOA
SOA
MMI
AWGs channel spacing is dependent also on processing. With a loop back architecture, we remove the process variations on the AWG.
Transmissive architecture can be used for testing purposes.
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ASPICs for High Energy Physics Experiments
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Modulators form the heart of the external modulation technique. Little is known about radiation hardness of (InP) modulators. Ultimate
goal : application at inner detectors at HL LHC.
InPMetal
Data arm
Databar arm
Laser input
Light output
Mach Zehnder (MZ) Modulator
Optical modulator
Continuous waveinjection laser
Photo diode Amplification
Digital read-out Chip
Modulation
Detector – High Radiation environment
Low radiation
Data acquisition & processing
CW Laser
Data
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Samples mounted in a shuttle that moves in and out of the 24 GeV/c proton beam at CERN to 1E12, 1E13, 1E14 and 1E15 p/cm2.
Vertex detectors at HL-LHC require a radiation hardness ~ 1E16 p/cm2.
The sample contains 22 modulators and measures 14mm × 4 mm
Beam Test of InP based MZ modulators
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Submount dimensions : 48 mm × 42 mm
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Measurements need precision alignment of chips and fibers. Lensed fibers are used to couple and collect light. Alignment of fibers are done manually using manipulators.
Measurements of photonic chips
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Bond wire
Lensed fiber (9 u core) to be aligned to a 2 u wide 1u high waveguide.
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A Sample measurement
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Input power = + 6dBm @ 1550nmY axis – Power (dBm) measured at the output.X axis – Voltage scan on one of the arms of the modulator.
-12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
Non-Irradiated samples
nonirradiated_mod9
Reverse Scan voltage on one of the arms of the Modulator
Power output (dBm)
InPMetal
Data arm
Databar arm
Laser input
Light output
Imba
lanc
e
PD
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WDM Modulator in the COBRA6 run
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DC and RF electrical contacts
WDM modulator
MZ modulators
SOAWaveguide facet
Test SOA
Test Modulator
Test AWG
MZ
MZ
MZ
(DE)MUX(D
E)M
UX
SOASOA
SOASOA
SOASOA
MZ modulators:◦ 2 mm phase sections
Two AWGs:◦ GHz◦ GHz
Amplifiers:◦ small: modulation◦ large: gain
Test structures:◦ separate building blocks
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Preliminary Measurement results
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1520 1530 1540 1550 1560 1570 1580-30
-25
-20
-15
-10
-5
0
AWG channels
Wavelength (nm)
Out
put
Pow
er (
dBm
)
CS = 400 GHz FSR = 2400 GHz
Cros
stal
k =
16
dB
-12 -10 -8 -6 -4 -2 0-30
-25
-20
-15
-10
-5
0
Test Modulators
TMm arm
Scan Voltage (V)
Out
put P
ower
(dBm
)
Extin
ction
ra
tio =
14
dB
Vπ = 6.5 V
InPMetal
TMm arm
TMp arm
Laser input
Light output
Optical power meter
(DE)
MUX
EDFAOptical
Spectrum Analyzer
On Chip
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Photonic Integration is in it’s nascent stages and holds a ‘bright’ future.
Physics experiments can benefit from custom ASPICs.◦ Smaller, low power, more functionality, cheaper for large quantities
Generic Photonic Integration platform and access to MPW runs makes it easier for designing ASPICs for High Energy Physics.
Lot to be designed and measured, long way to go…
Conclusions and Future
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