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VGS - Gate-to-Source Voltage (V)
RD
S(on) -
O
n-St
ate
Re
sista
nce
(m:
)
2 4 6 8 10 12 14 16 18 200
5
10
15
20
25
30
35
40
45
D007
TC = 25 C, I D = 30 ATC = 125 C, I D = 30 A
Qg - Gate Charge (nC)
V GS
- G
ate-
to-S
ourc
e V
olta
ge (V
)
0 2 4 6 8 10 12 14 16 180
2
4
6
8
10
D004
ID = 30 AVDS = 50 V
Gate
(Pin 1)
Drain (Pin 2)
Source (Pin 3)
Product
Folder
Sample &Buy
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CSD19534KCSSLPS530 JANUARY 2015
CSD19534KCS 100 V N-Channel NexFET Power MOSFET1 Features
Product Summary1 Ultra-Low Qg and Qgd TA = 25C TYPICAL VALUE UNIT Low Thermal Resistance VDS Drain-to-Source Voltage 100 V Avalanche Rated Qg Gate Charge Total (10 V) 16.4 nC
Qgd Gate Charge Gate-to-Drain 3.3 nC Pb-Free Terminal PlatingVGS = 6 V 16.3 m RoHS Compliant RDS(on) Drain-to-Source On-ResistanceVGS = 10 V 13.7 m Halogen Free
VGS(th) Threshold Voltage 2.8 V TO-220 Plastic Package
Ordering Information(1)2 ApplicationsDevice Package Media Qty Ship
Secondary Side Synchronous Rectifier CSD19534KCS TO-220 Plastic Package Tube 50 Tube Motor Control (1) For all available packages, see the orderable addendum at
the end of the data sheet.3 Description
Absolute Maximum RatingsThis 100 V, 13.7 m, TO-220 NexFET powerMOSFET is designed to minimize losses in power TA = 25C VALUE UNITconversion applications. VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage 20 VSPACEContinuous Drain Current (Package limited) 100
Continuous Drain Current (Silicon limited), 54ID TC = 25C A
Continuous Drain Current (Silicon limited), 38TC = 100C
IDM Pulsed Drain Current (1) 138 A
PD Power Dissipation 118 W
TJ, Operating Junction and 55 to 175 CTstg Storage Temperature Range
Avalanche Energy, single pulseEAS 54 mJID = 33 A, L = 0.1 mH, RG = 25
(1) Max RJC = 1.3C/W, pulse duration 100 s, duty cycle 1%.
RDS(on) vs VGS Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.
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CSD19534KCSSLPS530 JANUARY 2015 www.ti.com
Table of Contents5.3 Typical MOSFET Characteristics.............................. 41 Features .................................................................. 1
6 Device and Documentation Support.................... 72 Applications ........................................................... 16.1 Trademarks ............................................................... 73 Description ............................................................. 16.2 Electrostatic Discharge Caution................................ 74 Revision History..................................................... 26.3 Glossary .................................................................... 75 Specifications......................................................... 3
7 Mechanical, Packaging, and Orderable5.1 Electrical Characteristics........................................... 3Information ............................................................. 85.2 Thermal Information .................................................. 37.1 KCS Package Dimensions........................................ 9
4 Revision History
DATE REVISION NOTESJanuary 2015 * Initial release.
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CSD19534KCSwww.ti.com SLPS530 JANUARY 2015
5 Specifications
5.1 Electrical Characteristics(TA = 25C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITSTATIC CHARACTERISTICSBVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 A 100 VIDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 80 V 1 AIGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nAVGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 A 2.4 2.8 3.4 V
VGS = 6 V, ID = 30 A 16.3 20.0 mRDS(on) Drain-to-Source On-Resistance VGS = 10 V, ID = 30 A 13.7 16.5 mgs Transconductance VDS = 10 V, ID = 30 A 80 SDYNAMIC CHARACTERISTICSCiss Input Capacitance 1290 1670 pFCoss Output Capacitance VGS = 0 V, VDS = 50 V, = 1 MHz 257 334 pFCrss Reverse Transfer Capacitance 5.7 7.4 pFRG Series Gate Resistance 1.1 2.2 Qg Gate Charge Total (10 V) 17.1 22.2 nCQgd Gate Charge Gate-to-Drain 3.2 nCVDS = 50 V, ID = 30 AQgs Gate Charge Gate-to-Source 5.1 nCQg(th) Gate Charge at Vth 3.3 nCQoss Output Charge VDS = 50 V, VGS = 0 V 44 nCtd(on) Turn On Delay Time 6 nstr Rise Time 2 nsVDS = 50 V, VGS = 10 V,
IDS = 30 A, RG = 0 td(off) Turn Off Delay Time 9 nst Fall Time 1 nsDIODE CHARACTERISTICSVSD Diode Forward Voltage ISD = 30 A, VGS = 0 V 0.9 1.1 VQrr Reverse Recovery Charge 195 nCVDS= 50 V, IF = 30 A,
di/dt = 300 A/strr Reverse Recovery Time 72 ns
5.2 Thermal Information(TA = 25C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNITRJC Junction-to-Case Thermal Resistance 1.3 C/WRJA Junction-to-Ambient Thermal Resistance 62
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VDS - Drain-to-Source Voltage (V)
I DS
- D
rain
-to-S
ourc
e C
urr
ent (A
)
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.90
5
10
15
20
25
30
35
40
45
50
D002
VGS = 6 VVGS = 8 VVGS = 10 V
VGS - Gate-to-Source Voltage (V)
I DS
- D
rain
-to-S
ourc
e C
urr
ent (A
)
2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 60
10
20
30
40
50
D003
TC = 125 CTC = 25 CTC = -55 C
CSD19534KCSSLPS530 JANUARY 2015 www.ti.com
5.3 Typical MOSFET Characteristics(TA = 25C unless otherwise stated)
Figure 1. Transient Thermal Impedance
VDS = 5 V
Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics
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VSD - Source-to-Drain Voltage (V)
I SD - So
urc
e-to
-Dr
ain
Curr
ent (A
)
0 0.2 0.4 0.6 0.8 1 1.20.0001
0.001
0.01
0.1
1
10
100
D009
TC = 25 CTC = 125 C
TC - Case Temperature ( C)
No
rma
lize
d O
n-St
ate
Re
sist
ance
-75 -50 -25 0 25 50 75 100 125 150 175 2000.4
0.7
1
1.3
1.6
1.9
2.2
2.5
D008
VGS = 6 VVGS = 10 V
TC - Case Temperature ( C)
V GS(
th) -
Th
resh
old
Volta
ge (V
)
-75 -50 -25 0 25 50 75 100 125 150 175 2001.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
D006 VGS - Gate-to-Source Voltage (V)
RD
S(o
n) -
O
n-St
ate
Re
sista
nce
(m:
)
2 4 6 8 10 12 14 16 18 200
5
10
15
20
25
30
35
40
45
D007
TC = 25 C, I D = 30 ATC = 125 C, I D = 30 A
Qg - Gate Charge (nC)
V GS
- G
ate-
to-S
ourc
e V
olta
ge (V
)
0 2 4 6 8 10 12 14 16 180
2
4
6
8
10
D004VDS - Drain-to-Source Voltage (V)
C - C
apac
itance
(pF)
0 10 20 30 40 50 60 70 80 90 1001
10
100
1000
10000
D005
Ciss = Cgd + CgsCoss = Cds + CgdCrss = Cgd
CSD19534KCSwww.ti.com SLPS530 JANUARY 2015
Typical MOSFET Characteristics (continued)(TA = 25C unless otherwise stated)
ID = 30 A VDS = 50 V
Figure 5. CapacitanceFigure 4. Gate Charge
ID = 250 A
Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage
ID = 30 A
Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage
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Product Folder Links: CSD19534KCS
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TC - Case Temperature ( C)
I DS
- D
rain
-to-S
ourc
e C
urr
ent (A
)
-50 -25 0 25 50 75 100 125 150 175 2000
10
20
30
40
50
60
70
80
D012
VDS - Drain-to-Source Voltage (V)
I DS
- Dr
ain-
to-So
urc
e Cu
rren
t (A)
0.1 1 10 100 10000.1
1
10
100
1000
D010
DC10 ms1 ms
100 s10 s
TAV - Time in Avalanche (ms)
I AV
- Pe
ak Av
alan
che
Curr
ent (A
)
0.01 0.1 110
100
D011
TC = 25q CTC = 125q C
CSD19534KCSSLPS530 JANUARY 2015 www.ti.com
Typical MOSFET Characteristics (continued)(TA = 25C unless otherwise stated)
Single Pulse, Max RJC = 1.3C/W
Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
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CSD19534KCSwww.ti.com SLPS530 JANUARY 2015
6 Device and Documentation Support
6.1 TrademarksNexFET is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge CautionThese devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
6.3 GlossarySLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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CSD19534KCSSLPS530 JANUARY 2015 www.ti.com
7 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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CSD19534KCSwww.ti.com SLPS530 JANUARY 2015
7.1 KCS Package Dimensions
Pin ConfigurationPosition DesignationPin 1 Gate
Pin 2 / Tab DrainPin 3 Source
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PACKAGE OPTION ADDENDUM
www.ti.com 22-Jan-2015
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead/Ball Finish(6)
MSL Peak Temp(3)
Op Temp (C) Device Marking(4/5)
Samples
CSD19534KCS ACTIVE TO-220 KCS 3 50 Pb-Free (RoHSExempt)
CU SN N / A for Pkg Type CSD19534KCS
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 2
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IMPORTANT NOTICE
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright 2015, Texas Instruments Incorporated
1Features2Applications3DescriptionTable of Contents4Revision History5Specifications5.1Electrical Characteristics5.2Thermal Information5.3Typical MOSFET Characteristics
6Device and Documentation Support6.1Trademarks6.2Electrostatic Discharge Caution6.3Glossary
7Mechanical, Packaging, and Orderable Information7.1KCS Package Dimensions