Download - Datasheet IPI029N06N - Infineon Technologies
1
IPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
12 3
tab
I²-PAK
DrainPin 2, Tab
GatePin 1
SourcePin 3
MOSFETOptiMOSTMPower-Transistor,60V
Features•OptimizedforhighperformanceSMPS,e.g.sync.rec.•100%avalanchetested•Superiorthermalresistance•N-channel•QualifiedaccordingtoJEDEC1)fortargetapplications•Pb-freeleadplating;RoHScompliant•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParametersParameter Value UnitVDS 60 V
RDS(on),max 2.9 mΩ
ID 136 A
Qoss 65 nC
Qg(0V..10V) 56 nC
Type/OrderingCode Package Marking RelatedLinksIPI029N06N PG-TO 262-3 029N06N -
1) J-STD20 and JESD22
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
1MaximumratingsatTA=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current ID---
---
13610529
AVGS=10V,TC=25°CVGS=10V,TC=100°CVGS=10V,TA=25°C,RthJA=50K/W
Pulsed drain current1) ID,pulse - - 544 A TC=25°CAvalanche energy, single pulse2) EAS - - 110 mJ ID=100A,RGS=25ΩGate source voltage VGS -20 - 20 V -
Power dissipation Ptot--
--
1363.0 W TC=25°C
TA=25°C,RthJA=50K/W
Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category;DIN IEC 68-1: 55/175/56
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,bottom RthJC - 0.7 1.1 K/W -
Device on PCB,minimal footprint RthJA - - 62 - -
Device on PCB,6 cm² cooling area3) RthJA - - 40 - -
Soldering temperature, wave andreflow soldering are allowed Tsold - - 260 °C Reflow MSL1
1) See Diagram 3 for more detailed information2) See Diagram 13 for more detailed information3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.PCB is vertical in still air.
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
3Electricalcharacteristics
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 60 - - V VGS=0V,ID=1mAGate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA
Zero gate voltage drain current IDSS --
0.510
1100 µA VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on)--
2.73.3
2.94.4 mΩ VGS=10V,ID=100A
VGS=6V,ID=25A
Gate resistance1) RG - 1.3 1.95 Ω -
Transconductance gfs 80 160 - S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 4100 5125 pF VGS=0V,VDS=30V,f=1MHzOutput capacitance Coss - 980 1225 pF VGS=0V,VDS=30V,f=1MHzReverse transfer capacitance Crss - 39 78 pF VGS=0V,VDS=30V,f=1MHz
Turn-on delay time td(on) - 17 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω
Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω
Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω
Fall time tf - 8 - ns VDD=30V,VGS=10V,ID=100A,RG,ext,ext=3Ω
Table6Gatechargecharacteristics2)Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 20 - nC VDD=30V,ID=100A,VGS=0to10VGate charge at threshold Qg(th) - 11 - nC VDD=30V,ID=100A,VGS=0to10VGate to drain charge1) Qgd - 11 15 nC VDD=30V,ID=100A,VGS=0to10VSwitching charge Qsw - 19 - nC VDD=30V,ID=100A,VGS=0to10VGate charge total1) Qg - 56 66 nC VDD=30V,ID=100A,VGS=0to10VGate plateau voltage Vplateau - 4.8 - V VDD=30V,ID=100A,VGS=0to10VGate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10VOutput charge1) Qoss - 65 82 nC VDD=30V,VGS=0V
1) Defined by design. Not subject to production test2) See ″Gate charge waveforms″ for parameter definition
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
Table7ReversediodeValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS - - 108 A TC=25°CDiode pulse current IS,pulse - - 544 A TC=25°CDiode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=100A,Tj=25°CReverse recovery time1) trr - 54 86 ns VR=30V,IF=100A,diF/dt=100A/µsReverse recovery charge Qrr - 77 - nC VR=30V,IF=100A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 25 50 75 100 125 150 175 2000
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 25 50 75 100 125 150 175 2000
20
40
60
80
100
120
140
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 10210-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0.0 0.5 1.0 1.5 2.0 2.5 3.00
40
80
120
160
200
240
280
320
360
4007 V10 V
6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 80 160 240 320 4000
1
2
3
4
5
6
7
8
5 V 5.5 V 6 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 80
40
80
120
160
200
240
280
320
360
400
175 °C25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 20 40 60 80 1000
50
100
150
200
gfs=f(ID);Tj=25°C
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max
typ
RDS(on)=f(Tj);ID=100A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 140 1800
1
2
3
4
5
750 µA
75 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 20 40 60101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.0100
101
102
103
175 °C 25 °C
IF=f(VSD);parameter:Tj
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV [A]
100 101 102 103100
101
102
103
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 40 50 600
2
4
6
8
10
12
12 V
30 V
48 V
VGS=f(Qgate);ID=100Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-60 -20 20 60 100 140 18050
54
58
62
66
70
VBR(DSS)=f(Tj);ID=1mA
Gate charge waveforms
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
5PackageOutlines
Figure1OutlinePG-TO262-3,dimensionsinmm/inches
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OptiMOSTMPower-Transistor,60VIPI029N06N
Rev.2.5,2017-09-27Final Data Sheet
RevisionHistoryIPI029N06N
Revision:2017-09-27,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.4 2014-10-16 Rev.2.4
2.5 2017-09-27 Update product current
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