Download - DIP Type MOSFET - KEXIN
DIP Type
www.kexin.com.cn 1
MOSFET
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Features ● VDS (V) = 40V
● ID = 75 A (VGS = 10V)
● RDS(ON) < 3.7mΩ (VGS = 10V)
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
TO-220
1 2 3
1 GATE2 DRAIN3 SOURCE
4.50 ± 0.209.90 ± 0.20
1.52 ± 0.10
0.80 ± 0.102.40 ± 0.20
10.00 ± 0.20
1.27 ± 0.10
ø3.60 ± 0.10
(8.70)
2.80
± 0.
1015
.90
± 0.
20
10.0
8 ±
0.30
18.9
5MA
X.
(1.7
0)
(3.7
0)(3
.00)
(1.4
6)
(1.0
0)
(45)
9.20
± 0
.20
13.0
8 ±
0.20
1.30
± 0
.10
1.30 +0.10–0.05
0.50 +0.10–0.05
2.54TYP[2.54 ± 0.20 ]
2.54TYP[2.54 ± 0.20 ]
■ Absolute Maximum Ratings Ta = 25℃
Symbol Rating Unit
VDS 40
VGS ±20
(Package Limited) Tc=25℃ 75
Continuous Drain Current (Silicon Limited) Tc=25℃ 180
Tc=100℃ 120
IDM 710
IAR
EAR
330
480
Power Dissipation Tc=25℃ PD 200 W
62
40
RthJC 0.75
TJ 175
Tstg -55 to 175
Single Pulse Avalanche Energy Tested ValueEAS
mJ
(PCB Mount)RthJA
Single Pulse Avalanche Energy
Avalanche Curren
A
Repetitive Avalanche EnergySee Fig.12a, 12b, 15, 16
V
Pulsed Drain Current
Parameter
ID
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
℃/W
℃
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
DIP Type
www.kexin.com.cn2
MOSFET
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Electrical Characteristics Ta = 25℃
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS ID=250μA, VGS=0V 40 V
VDS=40V, VGS=0V 20
VDS=40V, VGS=0V, TJ=125℃ 250
Gate-Body Leakage Current IGSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS , ID=250μA 2 4 V
Static Drain-Source On-Resistance RDS(On) VGS=10V, ID=75A 2.7 3.7 mΩ
Forward Transconductance gFS VDS=25V, ID=75A 170 S
Input Capacitance Ciss 4340
Output Capacitance Coss 1030
Reverse Transfer Capacitance Crss 550
Output Capacitance Coss VGS=0V, VDS=1V, f=1MHz 3300
Output Capacitance Coss VGS=0V, VDS=32V, f=1MHz 920
Effective Output Capacitance Coss eff VGS=0V, VDS=0V to 32V 1350
Total Gate Charge Qg 100 150
Gate Source Charge Qgs 31
Gate Drain Charge Qgd 42
Turn-On DelayTime td(on) 18
Turn-On Rise Time tr 110
Turn-Off DelayTime td(off) 36
Turn-Off Fall Time tf 58
Body Diode Reverse Recovery Time trr 28 42
Body Diode Reverse Recovery Charge Qrr 34 51 nC
Internal Drain Inductance LD 4.5
Internal Drain Inductance LS 7.5
Maximum Body-Diode Continuous Current IS 75
Pulsed Source Current ISM 750
Diode Forward Voltage VSD IS=75A,VGS=0V,Tj = 25℃ 1.3 V
Zero Gate Voltage Drain Current IDSS μA
VGS=10V, VDS=20V, ID=75A,RG=3Ω
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=32V, ID=75A nC
pF
IF= 75A, dI/dt= 100A/μs,VDD=20V,Tj = 25℃
A
Between lead,6mm (0.25in.) frompackage and center of die contact nH
ns
MOSFET symbolshowing thentegral reversep-n junction diode.
DIP Type
www.kexin.com.cn 3
MOSFET
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Typical Characterisitics
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward TransconductanceVs. Drain Current
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D,D
rain
-to-S
ourc
eC
urre
nt(A
)
4.5V
20µs PULSE WIDTHTj = 25°C
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D,D
rain
-to-S
ourc
eC
urre
nt(A
)
4.5V 20µs PULSE WIDTHTj = 175°C
0 40 80 120 160
ID, Drain-to-Source Current (A)
0
40
80
120
160
200
Gfs
,For
war
dTr
ansc
ondu
ctan
ce(S
)
TJ = 25°C
TJ = 175°C
VDS = 15V20µs PULSE WIDTH
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D,D
rain
-to-S
ourc
eC
urre
nt ( A
)
TJ = 25°CTJ = 175°C
VDS = 15V20µs PULSE WIDTH
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
1 10 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
C,C
apac
itanc
e(p
F)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = CgdCoss = Cds + Cgd
0 40 80 120 160
QG Total Gate Charge (nC)
0
4
8
12
16
20
V GS
,Gat
e-to
-Sou
rce
Volta
ge(V
) VDS= 32VVDS= 20V
ID= 75A
DIP Type
www.kexin.com.cn4
MOSFET
.
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Typical Characterisitics
Fig 8. Maximum Safe Operating AreaFig 7. Typical Source-Drain DiodeForward Voltage
0.2 0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I SD
,Rev
erse
Dra
inC
urre
nt(A
)
TJ = 25°C
TJ = 175°C
VGS = 0V
0 1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
I D,
Dra
in-to
-Sou
rce
Cur
rent
(A)
Tc = 25°CTj = 175°CSingle Pulse
1msec
10msec
OPERATION IN THIS AREA LIMITED BY R DS(on)
100µsec
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.Case Temperature
Fig 10. Normalized On-ResistanceVs. Temperature
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
40
80
120
160
200
I D,D
rain
Cur
rent
(A)
LIMITED BY PACKAGE
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
RD
S(on
),D
rain
-to-S
ourc
eO
nR
esis
tanc
e(N
orm
aliz
ed)
ID = 75AVGS = 10V
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
Ther
mal
Res
pons
e(Z
thJC
)
0.20
0.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
DIP Type
www.kexin.com.cn 5
MOSFET
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Typical Characterisitics
QG
QGS QGD
VG
Charge
D.U.T.VDS
IDIG
3mA
VGS
.3µF
50KΩ
.2µF12V
Current RegulatorSame Type as D.U.T.
Current Sampling Resistors
+-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche EnergyVs. Drain CurrentFig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
Fig 14. Threshold Voltage Vs. Temperature
RG
IAS
0.01Ωtp
D.U.T
LVDS
+- VDD
DRIVER
A
15V
20VVGS
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
100
200
300
400
500
600
E AS,
Sing
lePu
lse
Aval
anch
eEn
ergy
(mJ)
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
V GS(
th)
Gat
eth
resh
old
Volta
ge(V
)
ID = 250µA
DIP Type
www.kexin.com.cn6
MOSFET
N-Channel MOSFETIRF1404Z (KRF1404Z)
■ Typical Characterisitics
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche EnergyVs. Temperature
1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
10000
Aval
anch
eC
urre
nt(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25°C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax0.01
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
E AR
,Ava
lanc
heEn
ergy
(mJ)
TOP Single Pulse BOTTOM 10% Duty CycleID = 75A