112&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
EUV Resist EvaluationExCite T406 and
More Moore, SP3 WP6,
Objective: Evaluation of resist for EUV Lithography at 45nm, 32nm, 22nm node
AZ Electronic MaterialsAthens
12.Mai 2005
212&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Concepts and resultsSingle layer resists (SLR) formulations will be investigated by AZ-EM. No double layer resist technique will be evaluated.
The chemical amplification concept was selectedCAR’s are preferred resists for EUV lithography because they have a high sensitivity, high resolution, high contrast and good etch resistance.The chemical amplification concept will be further tested and optimized till to the limits of resolution, LER and outgassing.
Of cause, if new chemical concepts arise with the theoretical power of superior resolution, higher sensitivity and less LER, they are always appreciated and can lead to a change in the chemical concept.
312&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Resist-Polymer Dose-to-clear D0
[mJ/cm2 ]
Contrast
UFTL
[nm]
Dneg
[mJ/cm2]
PHOST type B 0,46 4,73 0 100
Modified PHOST type B 0,87 2,95 0 100
ACR MA type II 0,9 9,6 1 n. c.
Modified POSS type 1,11 5,51 0 n. c.
PHOST type B 1,3 3,2 10 100
Modified POSS type 1,71 9,59 2 n. c.
ACR MA type II 1,9 5,0 10 n. c.
ACR MA type I 2,0 4,3 2 n. c.
ACR MA type II 2,4 3,2 4 n. c.
modified Fujitsu-type copolymer 2,44 125
ESCAP type 2,7 4,4 2 90
POSS type 2,7 14,8 0 n. c.
modified Fujitsu-type 3,11 4,92
Hybrid PHOST type C 3,9
COMA hybride ACR type 4 2,2 n. c.
modified ACR-type 4 1,9 n. c.
modified ACR-type 4,66 2,7 108
modified Fujitsu-type 5 1,66
modified ACR-type 5,34 3,7
modified ACR-type 5,34 4,3
modified Fujitsu-type 5,34 7,12
Fujitsu type 6,0 8,3 2
modified ACR-type 6,22 3,7
Modified PHOST type B 8,6 3,7
PHOST type A 8,7 7,1
modified ACR-type 8,66 2,5
COMA hybride ACR type 8,66 3,81 n. c.
modified ACR-type 11,56 3,3
PHOST type A 13,5 7,3
ESCAP type 13,5 3,5
Hybrid PHOST type C 13,6 8,5
Modified ESCAP type B 20,0
Open Frame Resist data of various polymer platforms
Open Frame Characterization
EUV exposures were done at the BESSY synchrotron and the open frame EUV exposure tool TEUVL, Infineon, Erlangen.
ExCITe T406
412&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
E S C A P - t y p e
2 4 8 n m
P H O S T - t y p e AL o w A c t i v a t i o n E n e r g y
2 4 8 n m
P H O S T - t y p e BH i g h A c t i v a t i o n E n e r g y
2 4 8 n m
M o d . E S C A P t y p e BH i g h A c t i v a t i o n E n e r g y
2 4 8 n m
O
C O
O
O H
O O
H 3 C
C H 3
C H 3
O H
OH 3 C
O
O H
O O
H 3 C
C H 3
C H 3
O H
O
C O
O
OH
Hybrid PHOST type C
Low Activation Energy
248 nm
COMA hybrid ACR type
Cycloolefin maleic
anhydride
Acrylic
193 nm
ACR-type
(acrylic ester)
193 nm
COMA-type
(Cycloolefin maleic
anhydride)
193 nm
O
O
O
OH
OO O O
OH Ot-Bu
O
n m p
O O
H3C
CH3
CH3
OH O CH3
O
OO
OO O
m
O
O
O
OH
F u j i t s u - t y p e( a d a m a n t y l l a c t o n e e s t e r )
1 9 3 n m
A C R - M A t y p e IS i - c o n t a i n i n g
1 9 3 n m
A C R - M A t y p e I I
1 9 3 n m
O
O
O
O
O
O
O OOO
O R
OO OO
O
O R
O
O OOO
O R
O
S i ( C H 3 ) 3O OO
O
O R
O
S i ( C H 3 ) 3S i ( C H 3 ) 3
O OOO
O R
OO OO
O
O R
O
O
O
O
O
O
O
Some polymer platforms screened for EUV resist
ExCITe T406
512&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
3. From each chemical platform resist were found by Open FrameTest which fullfil the sensitivity requirements <5mJ/cm² for testsof patterning performance (resolution, LER, …).
These patterning EUV exposures have been done at the 10xmicrostepper (0.088 NA) at the EUV-LLC Sandia.The resolution of 80 nm was limited not by the resists (which weknow from e-beam exposures) but by the aerial image of theexposure tool.
Result of open frame screnning for available EUV Resist samples
1. Most investigated chemical platforms are viable for EUV patterning.
2. No clear advantage could be found for either 193nm or 248nm type resists/polymers.
ExCITe T406
612&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Patterning results at EUV-LLC 10x microstepperAZ LExp.5555PHS-MethacrylatePolymer
AZ AX 1050P-HSMethacrylate- copolymer
AZ AX 1120Pmodified methacrylateco polymer
Photospeed 1:1100 nm lines
1.6 mJ/cm² 6.4 mJ/cm² 10.2 mJ/cm²
Resolution 1:1 80 nm 80 nm 80 nm
LER 100nm lines1) 7.8 nm 6.3nm 3.9nm
ExCITe T406
712&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Process conditions Sep 2004Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5 // Development: 60 s, immersion, 2.38% TMAH //
EUV Sandia Microstepper
Results100 nm l/s structures
F30L0035 (95/90-140/60)
905 pulses / 3.6 mJ/cm² 905 pulses / 3.6 mJ/cm²
F30L0035 (95/90-140/60) 748 pulses / 3.0 mJ/cm²
F30L0035 (120/60-130/60) horiz. line
F30L0035 (120/60-130/60)
748 pulses / 3.0 mJ/cm²
Mw=14 000
Correlation of Molecular weight of polymer with LER
812&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Process conditions Sep 2004Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5 // Development: 60 s, immersion, 2.38% TMAH //
EUV Sandia Microstepper Results100 nm l/s structures
F30L0036 (120/60-130/60) horiz. line
1089 pulses / 4.3 mJ/cm²
F30L0036 (120/60-130/60) horiz. line
1198 pulses / 4.7 mJ/cm²
F30L0036 (120/60-130/60)
1089 pulses / 4.3 mJ/cm² 1198 pulses / 4.7 mJ/cm²
F30L0036 (120/60-130/60)
F30L0036 (95/90-140/60)
1319 pulses / 5.2 mJ/cm²
Mw=45 000
Correlation of Molecular weight of polymer with LER
912&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Process conditions Sep 2004Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5 // Development: 60 s, immersion, 2.38% TMAH //
1034 pulses / 4.1 mJ/cm²940 pulses / 3.7 mJ/cm²
F30L0039 (120/60-130/60) F30L0039 (120/60-130/60) horiz. line
940 pulses / 3.7 mJ/cm²
1034 pulses / 4.1 mJ/cm²
F30L0039 (120/60-130/60) horiz.line
F30L0039 (120/60-130/60)
1137 pulses / 4.5 mJ/cm² / F=0.51137 pulses / 4.5 mJ/cm² / F=0
F30L0039 (95/90-140/60) F30L0039 (95/90-140/60)
Mw=14 000 50%Mw=45 000 50%
Correlation of Molecular weight of polymer with LER
1012&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Screening of methacrylate-acrylate type based resists at Sandia for LER, sensitivity
3959pulses/10.1mJ/cm²/1411 pulses / 3.6 mJ/cm² /
F30L0030 10_4
EUV Standard
2668 pulses / 6,8 mJ/cm² 3724 pulses / 9,5 mJ/cm²
F30L0046 10_14
F30L0048 10_15
methacrylate-acrylate type
methacrylate type
methacrylate-acrylate typePAG variation
1112&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
EXP # Lot ID Wafer #
Nominal dose
(mJ/cm2)
DTS (mJ/cm2
@ 100 nm) LER (nm) RES (nm) Remarks
0 EUV 2D 040914_001 6.8 5.0 Standard1 F30L0042 040914_002 4.1 4.0 6.2 > 60 adhesion failure
MA- coPoly F30L0030 040914_004 7.7 Overdosed 9.0 30.0 high LER -> EXP #11MA-A coPoly F30L0031 040914_003 5.6 5.6 8.8 40.0 bridging
mod. ESCAPE F30L0034 040914_005 3.5 3.6 7.4 > 60 resolution limitmod. ESCAPE F30L0035 040914_006 3.5 3.1 8.6 > 60 resolution limitmod. ESCAPE F30L0036 040914_007 4.2 4.6 6.2 > 60 resolution limitmod. ESCAPE F30L0037 040914_008 4.2 4.2 8.1 60.0 resolution limitmod. ESCAPE F30L0038 040914_009 3.7 3.6 8.0 50.0 resolution limitmod. ESCAPE F30L0039 040914_010 3.7 3.4 7.6 50.0 resolution limitmod. ESCAPE F30L0040 040914_011 5.1 5.4 6.0 60.0 resolution limit
MA- coPoly F30L0030 040915_002 2.7 2.9 8.1 25 ??? very roughMA- coPoly F30L0030 040915_003 3.0 2.7 7.3 25 ??? very rough
mod. ESCAPE F30L0034 040915_004 3.0 3.6 9.7 > 50mod. ESCAPE F30L0035 040915_005 3.0 3.0 9.0 > 50mod. ESCAPE F30L0036 040915_006 3.5 4.6 7.9 > 50MA-A coPoly F30L0025 040915_007 9.0 6.7 7.9 25 ??? very roughMA- coPoly F30L0030 040915_008 3.0 2.2 8.1 25 ??? very rough
mod. ESCAPE F30L0037mod. ESCAPE F30L0038mod. ESCAPE F30L0039mod. ESCAPE F30L0040
21 F30L0024-D1MA- coPoly F30L0030
mod. ESCAPE F30L0043mod. ESCAPE F30L0044mod. ESCAPE F30L0045
MA- coPoly F30L0046 13.6 5.7 40.0 nested line, good performanceMA-A coPoly F30L0047MA- coPoly F30L0048 13.6 ~5.0 35 - 40 nested line, scum
not requested
not requested
EUV Berkeley
not requestednot requestednot requested
EUV Exposure testsat Berkeley when MET with higher resolution capability was available
Tests for resist resolution and LER, sensitivity
1212&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
EXPF30L0050 X-sections
Slot 10
45 nm
40 nm
Dose 29.3
Dose 35.6
Dose 29.3
Dose 35.6
+- 43 nm
+- 40 nm
Resolution test with Methacrylate-acrylate EUV Resist at PSIInterference EUV Lithography
ExCITe T406
1312&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Conclusion for resist formulation
The CAR resist material tested so fare for EUV Lithography does not fulfill the needed reqirements of an EUV resist
For resist evaluation and selection of proper resist material is needed
• Access to high resolution exposure tool• Stable process conditions• Reproducible and comparable metrology (LER measurement, high
resolving SEM)
If CAR reach its final resolution limit, project for new resist chemistry is proposed.