Download - EUVL R&D in Korea - EUV Litho, Inc
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EUVL Mask
Technology
2011 international Workshop on EUV Lithography
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EUVL R&D in Korea
Jinho AhnHanyang University, Seoul, Korea
14 June 2011
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EUVL Mask
Technology
Who is interested in EUVL ?
Device manufacturer and material supplier
- Samsung : NAND Flash, DRAM, High-end Foundry
- Hynix: DRAM
- Dongjin Semichem: Photoresist
Academia and Research Institute
- Hanyang Univ.: strongest activity, owns EUVL beamline
- Seoul National University, SKKU, Inha Univ., POSTECH…..
- Pohang Accelerator Laboratory (PAL)
Tool maker
- Some small/med. size companies are developing EUV-related tools in collaboration with customers
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EUVL Mask
Technology
NXE 3100 delivered …
Samsung (2010) and Hynix (2011) got their PPT from ASML with Cymer source
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EUVL Mask
Technology
EBL
Etch
Cleaning
Inspection
Repair
Blank
Mask-related activities
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EUVL Mask
Technology
Actinic Mask Inspection
Recently moved to Hanyang Univ. and installed
with stand-alone coherent source
Coherent Scattering Microscope at Pohang Synchrotron Facility,
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EUVL Mask
Technology
Now, field spectrum measurable down to 13 nm node
From the aerial image, CD, contrast…… can be extracted
Reflectivity measurement error (3s) is 0.76(%)
And the resulting CD error is ~ 0.38%
Field Spectrum
Illumination condition
Aerial Image
Actinic CD measurement by CSM
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EUVL Mask
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Similar results between CSM and Mask SEM
Reproducibility is superior for CSM (∆CD: CSM < 0.2 nm, SEM < 1 nm)
Mask SEM CD CSM
CD Uniformity– Actinic vs. Non-actinic
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EUVL Mask
Technology
HP88 nm mask pattern after 3 hr exposure with synchrotron
- Max. 15nm CD increase due to contamination
Mask CD Uniformityafter Exposure
CD Uniformity 3D Plot
3단계 2차년도 결과 발표 2010. 09. 14
CD measurement after Contamination
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EUVL Mask
Technology
Carbon contamination removal recipe developed.
Cleaning_1 condition removes carbon on absorber but not on Ru capping
Cleaning_2 condition removes carbon on Ru as well as absorber.
A
B
C
CD increase according to the contamnation
Contaminated
Absorber
Ru capping
CD recovered due to carbon removal on
absorber
A
B
C
Cleaning 1
Absorber
Ru capping
Carbon removal even on the Ru capping area
Cleaning 2
Absorber
Ru capping
Mask Contamination Removal
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EUVL Mask
Technology
Compared to TaBO, SiON exhibits improved performance
(Reflectivity at193 nm: 22.3% 8.8%)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
190 390 590 790 990
Ref
lect
ance
Wavelength (nm)
SION ARCTaBO ARC
New ARC for 193nm inspection
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EUVL Mask
Technology
Substrate
40 pairs of Mo/Si ML
Phase Shift layer
Absorber
PhaseShift layer
Absorber
R2, Φ2 R1, Φ1Phase shift: |Φ1-Φ2| =
180˚
0%
20%
40%
60%
80%
100%
120%
140%
160%
180%
total thickness
(nm)
MEEF (nm) H-V bias (nm) image contrast
(%)
70 2.58 4.91 53.7
40.5
2.12
1.26
60.770
1.35 2.66
90.4
40.5
0.98
0.82
87.4conventional BIM (0.25NA) proposed PSM (0.25NA)
conventional BIM (0.32NA) proposed PSM (0.32NA)
Attenuated PSM
0%
10%
20%
30%
40%
50%
53.00%
55.00%
57.00%
59.00%
61.00%
0 5 10 15 20 25 30 35 40
Ref
lect
ivity
(%)
imag
e co
ntr
ast
%
Thickness of Mo phase shifter
0.25 NA
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EUVL Mask
Technology
12.4 mJ/cm2
38.4nm13.2 mJ/cm2
35.7nm14.0 mJ/cm2
32.7nm14.8 mJ/cm2
30.6nm15.6 mJ/cm2
27.8nm
Bridge Bridge Collapse Collapse
DHE-1212 on UL, resin(P,F)=(3.2, 5.2), Quencher(P)=(-1.2)
DHE-1302 on UL, resin(P,F)=(2.8, 6.5), Quencher(P)=(4.1)
LER 3.8 nm
13 mJ/cm2
39.51 nm
Improved collapse & LER
14 mJ/cm2
34.44 nm15 mJ/cm2
31.19 nm16 mJ/cm2
28.42 nm17 mJ/cm2
25.29 nm18 mJ/cm2
22.39 nm19 mJ/cm2
Collapse
Resist exposure test with ADT
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EUVL Mask
Technology
20mJ49.6 47.0 21mJ 40.4 22mJ 23mJ39.4 34.4 24mJ x19mJ53.0
17mJ
18mJ
61.415mJ11mJ 12mJ 13mJ 14mJ 16mJ111.9 98.1 90.1 79.0 69.1 65.3
17 mJ 60.9 nm
LER=2.8 nm
17 mJ 61.4 nm
LER=2.0 nm
Rinse Process
PAG-bound polymer (ArF Test)
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EUVL Mask
TechnologyGreetings from Korea EUVL R&D Consortium
(EUVL Workshop on June 3-4, 2011 @ Jeju Island)