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Newsletter of Foundation for Innovation and Technology Transfer,Indian Institute of Technology, Delhi

C O N T E N T SInvited Articles.........................................................................................................................3

Voices........................................................................................................................................6

Faculty Profile..........................................................................................................................8

IIT Delhi News.........................................................................................................................11

Technology Profile...........................................................................................................12

Miscellaneous......................................................................................................................1 3

IPR...................................................................................................................................................14

Professional Development.......................................................................................15

Projects.......................................................................................................................................16

I S S N - 0 9 7 2 - 2 5 4 8

Vol. 16 No. 2 July-August 2010

The Golden Jubilee Logo consists of four parts, namely a timeline foundation, the iconic roof of the Dogra Hall, a pair of crystal wings and

the rising arc of organic knowledge.

FITT Forum Newsletter-July 2010.pmd 8/13/2010, 4:41 PM1

Foundation for Innovation and Technology Transfer Forum - August 2010

“Waka Waka....” The just concluded 2010 FIFAWorld Cup defied the “Pundits” and “Punters”; wentalong with Paul – the octopus’s predictions, threwup surprises but, did not fail to show up ruggeddetermination, enthusiasm and all-around passionin the scintillating game of soccer. It was a rollingevent. The same passion and enthusiasm has playedout at IIT Delhi for the past 49 years ! Yes, we areentering the Golden Jubilee Year from August’10.And this is only a milestone in our long and high-standards’ journey of academic pursuits.Fortunately, the journey has not been solo orisolationist. It has been an over-arching evolutionthat, in its wake, has created an ecosystem ofexcellence in learning and development. Amongstits various program manifestations has been thecreation of Foundation for Innovation andTechnology Transfer (FITT) - an organisation meantto strengthen the Institute’s outreach to businessand the community through its various activitiesand programs drawing on the intellectual andinfrastructural strengths of IIT Delhi. We inviteyou to join us in our endeavour towards still higheraccomplishments for the Institute which has justunveiled it's beautiful Golden Jubilee Logo as seenon the cover page.

The financial year end 2010 for FITT was yetanother period of growth and consolidation. Thenumbers were better off than in the previousyears, contributed in part by our increasedattention towards International projects thatinvolve a consortium approach to research anddevelopment. However, as always, we bet onrelating with the business towards knowledgetransfer. We believe this is an effective mechanismfor technological intervention. The increasedthrust towards professional developmentprograms primarily aimed at the industrysegment continues. Technology commercializationthrough licensing and techno-entrepreneurshipparticularly through the incubation routecontinue to be our flagship verticals. Theseprograms have also acquired wider dimensionsof leveraging the various open innovationplatforms supported by the Government entitieseg DIT, DSIR, MSME and TIFAC. Three of ourpromising TBIU start-ups exited for scale-up andregular commercial operations. We are on thetrack of strengthening our techno-entrepreneurshipprogram at IIT Delhi and trying to come up tothe potential and expectations. Our hard workcontinues !

The Golden Jubilee Year

Anil Wali

Entrepreneurial and Managerial Development (MSME) - to nurture /promote technology / knowledge - based innovative ventures throughfinancial / incubation support (www.msme.gov.in)

Innovation Support – under TePP (DSIR) - to enable innovators to becometechnology entrepreneurs through financial support / mentoring – upto Rs15 / 45 lakh (www.dsir.org)

FITT organised the celebration of the National Technology Day at IIT Delhi

on May 12, 2010. On this occasion, a thematic seminar “Incubating Technology

Solutions” was held at the Senate Room of the Institute. The speakers on the

occasion comprised of Prof. KR Rajagopal (Dept. Electrical Engg., IIT Delhi and

promoter of TBIU Start-up Global Motor Tech Pvt Ltd), Dr. Aaditeshwar Seth

(Deptt. Computer Science & Engg and promoter of TBIU Start-up Gram Vaani

Community Media Pvt. Ltd.), Shri. Ravi Kapoor (Promoter : Faros Technologies

Pvt. Ltd) and Sh. Dipinder Sekhon (of Kritikal Solutions Pvt. Ltd). The programme

was inaugurated by Prof S Prasad, Director, IIT Delhi and was attended by

several senior faculty members, students and some members of the industry. The

four presentations during the seminar highlighted the respective backgrounds,

development challenges, strategies and successes in technology venturing at the

TBIU in IIT Delhi.

National Technology Day

FITT extends followingsupports under approvedGovernment Schemes

02



Hitesh Shrimali,Shouri Chatterjee

11 GHz UGBW OPAMP with Feed-ForwardCompensation Technique

Fig. 2. Transistor level implementation

Abstract—A high speed pseudo differential three stageoperational amplifier has been implemented using a feed-forwardcompensation technique in a standard 0.13 m CMOS technology.The three stage inverter based opamp with feed-forwardcompensation achieves 11 GHz of unity gain bandwidth andexhibits 39.5 dB of DC gain with phase margin of 62 when drivinga differential load of (2300 fF). The proposed opamp achieves afigure of merit (FOM) of 440 [1] and in simulation, the overallcircuit consumes 18 mw of power.

1. IntroductionAn operational amplifier is a key building block in analog

circuit design. For maximum bandwidth, minimum length devicesoffer the maximum advantages as these have maximum fT . Atypical 0.13 m CMOS device has an intrinsic gm rds of 8 forminimum channel length because of short channel effects. Thislimits the maximum gain of a typical two stage opamp design toless than 36 dB. This is unacceptable for high performance designs.One can opt to use a cross-coupled pair to improve the gain,however this kind of gain enhancement is uncontrolled. One canuse a folded cascode amplifier to achieve higher gain; however,this limits the output swing of the first stage of the amplifier andcreates difficulties in biasing at low power supply voltages.

A traditional three stage amplifier achieves higher gain thana two stage amplifier, but has limited bandwidth. Differentfrequency compensation techniques have been reported for threestage operational amplifiers. In the proposed design, a feed-forward compensation technique [2] has been utilized to stabilizea three stage operational amplier without sacricing bandwidth.

2. DesignFig. 1 shows the block-diagram of a three stage operational

amplifier with feed-forward compensation. For easy analysis, a singleended design is shown. A feed-forward compensation technique hasbeen used to stabilize the three stage operational amplifier. The threestage cascaded amplifier on path A provides a gain of ÀÛÜA3 V at

low frequency.At highfrequencies ,since path B isfaster, theamplifier willtypically have again of onlyÀÛÜAV f . At thesame time, tofirst order, the

gain bandwidth product will be given by AV f times the bandwidth ofpath B. A class AB based push pull amplifier has been used to implementeach of the single stage amplifiers.

Fig. 2 showsthe transistorl e v e limplementationof the pseudod i f f e r e n t i a lo p e r a t i o n a lamplifier. Thecascaded stageson path A aremade identical.The aspect ratio of the forward path transistors have been chosensuch that the desired phase margin is obtained.

The three stage operational amplifier with pseudo differentialtopology gives a common mode gain which is the same as thedifferential gain. The common-mode gain is negative. As a result,when the opamp is used under negative feedback conditions, thecommon-mode voltage will automatically stabilize and noadditional common-mode feedback loop is necessary. A small-signal low frequency voltage gain of the three stage operationalamplifier is shown in equation 1

AV = ÀÛÜ GmR( + G2mR2)1 + (1)

where Gm = gmn + gmp, R = rdsnjjrdsp and is defined as the ratioof an aspect ratio of the path A to the path B. The feed-forward pathadds a pair of complex and conjugate zeros in the amplifier transferfunction in order to stabilize the 3-stage operational amplifier.

3. Simulation ResultsFig. 3 shows the magnitude and phase plot of an operational

amplifier. The magnitude plot shows 39 dB of gain with11 GHzunity gain bandwidth and the phase plot shows a phase marginof 62 when driving a differential load capacitance of 300 fF. The gain

Fig. 1. Block diagram of proposed 3-stage operationalamplifier with feedforward compensation Fig. 3. Magnitude and phase plot

03Invited Articles



Fig. 4. Unity gain bandwidth as a function of supply voltage

Fig. 5. Power consumption as a function of supply voltage

plot clearly shows a double pole at the same frequency. The compensatedpole and zeros plays a vital role to tune the phase margin.

Fig. 4 shows the variation of unity gain bandwidth with respectto supply voltage. Even at extremely low power supply voltages(0.4, 0.5 Volts), the opamp is usable at significantly large frequencies.This is because of the design strategy - not using any cascodestages or even a tail current source. The opamp primarily uses theCMOS inverter as its building block. We have taken advantage ofthe robustness and simplicity of the CMOS inverter. Fig. 5 showsthe power consumption of an operation amplifier with respect tosupply voltage.

Holographic Devices foInformation T

[1] W.M.Sansen, Analog Digital Essential. Springer-verlag, 2006,no. ISBN978-0-387-25746-4.

[2] L. Li, “High gain low power operational amplifier design andcompensation technique,” Ph.D. dissertation, Brighom YoungUniversity, April 2007.

4. ConclusionA feed-forward compensation has been implemented by

keeping a single stage differential amplifier in the feed forwardpath in order to achieve a very high speed and stability. The use ofa class AB push pull inverter gives very high bandwidth and swing.One can design extremely high speed analog systems, such ascontinuous time sigma delta (CTSD), filters using such an opamp.

This opamp has been designed at the VLSI laboratory, IIT Delhi.It has been incorporated into the design of a high speed continuoustime sigma-delta analog-todigital converter. The design has beensent for fabrication and test results are awaited. For more details,contact [email protected].

References

The principle of holography, as conceived by Dennis Gaborin 1947, for which he received the Nobel prize, involvesthe recording and reconstruction of complex

interferograms. As compared to photography, holography is anon-conventional imaging technique without even the need oflenses for imaging, at the same time, renders 3-dimensionalviews from its images. Some of the unique characteristics ofholography make it a very powerful and useful tool with potentialapplications in many areas. Some of these practical applicationareas include, information security, information storage andsearch, pattern recognition, non-destructive testing, advertising,medical imaging, display technology, futuristic photonic circuitsetc. Our research group has been involved in developing noveltechniques and architectures towards some of the contemporaryholographic applications that include high density data storage,holographic search engine, holographic lithography for photonicstructure fabrication, optical pattern recognition, digitalholographic microscope etc.

High Density Holographic Data Storage: A digitalholographic disk (DHD), employing holographic principles forthe storage and retrieval of huge amounts of data at fast paralleltransfer rates, is envisaged as the next generation removablestorage device after DVD and Blue Ray-DVD. Holographic datastorage offers storage capacities of the order of many Terabyteson a disk. A holographic storage disk can support a transferrates in Gb per second in comparison to current technology’sfew Mb per second. These features have been achieved by thepage-oriented storage principle and the multiplexing of a largenumber of such data pages in a single location. In spite of activeresearch carried out over the last few decades by various researchgroups around the world in the topic of holographic data storagesystems, there are many issues which need further improvement.We have made significant contributions in increasing the memorycapacity, improved bit-error rate characteristics and bettercontent search capability of defocused volume holographic datastorage systems that use photopolymer as the recording medium.

Holographic Image/Data Search Engine: In addition toconventional address-based read-out, DHD offers the potentialfor simultaneous search of an entire database by performingmultiple optical correlations between the stored data pagesand a search argument. Such an added feature of content-addressable searching is always beneficial considering the highstorage density of 500 Gbytes in 120 mm disk with VHDS. Sincea holographic search engine performs an entire database searchwith a single optical exposure, it can potentially search massivedatabases orders of magnitude faster than conventional

04 Invited Articles



Joby Joseph Department of Physics,IIT Delhi, New Delhi 10016.E-mail: [email protected] for

n Technologyalternatives. The degree of similarity between a stored datapage or image in the data bank and the search argument ismeasured by the intensity of the diffracted light that correspondsto the correlation peak, which is the inner product between thestored data page and the search page.

The identificationof gray-scale imageswith distortions likerotation, scale, andnoise, etc. is achallenging task inpattern recognitionapplications. Fordistortion-invariantpattern recognition,either a data bankcomprising largenumber of distortedversions of images is generated or distortion-invariant filtersare designed to cater to the invariance. There have been numerousstudies on volume holographic correlators for pattern recognitionapplications. One of the limiting aspects of gray-scale imageswhen used in holographic correlator is the fact that they alwaysproduce strong dc and low frequency components and henceproduces unwanted correlations when a multiplexed holographiccorrelator is used for pattern recognition purposes. We haveintroduced novel image coding techniques that significantlyimproved the correlation accuracy of holographic search systems.We have also designed and implemented improved contentaddressable search methods, such as two-dimensional dataencoding employing phase-based data pages, gray-scale &sparse-gray-scale data pages etc. for use in defocused volumeholographic search systems.

Holographic Lithography for Photonic Structure Fabrication:Another recent application of holography is, to use it as a tool tofabricate large area nano-photonic structures. Nano-photonicspromises captivating new fundamental physics, and newapplications in low power, ultra-small devices performing at thequantum edge in a wide range of technologies such as informationprocessing, telecommunications, medicine and biotechnologies.Holographic technique has great potential in forming 2-D as wellas 3-D volumetric structures in photosensitive materials. Photoniccrystal structure requires a high contrast volumetric pattern. Inholographic lithography, a periodic intensity distribution isproduced with the help of 2 or more collimated beams [Fig. 1]. Aphotosensitive material such as photoresist or photopolymer is

exposed to that intensity distribution. Post-exposure processingimposes a threshold on the smoothly-varying intensity contoursin the interference pattern. Usually, photoresist is used as arecording material and after development the recorded structureis transferred to a high refractive index material, such as Silicon.Even though, the fabrication of photonic structures on relevantlength scales (i.e., nanometer, sub micrometer, and micrometer)can be achieved by means of various techniques such as electronor ion beam writing, deposition methods and self assembly, theprime advantage of holographic lithography is, to fabricate largearea defect-free nano-photonic structures both rapidlyand cheaply.

Recording geometry 2-D and 3-D Photonic crystal structures

We have developed novel methods based on two-beam andmultiple beam interference having potential to realize any ofthe crystal lattice structures including diamond structures, basedon designs which are least complex and provide more flexibilitycompared to existing techniques. We have shown that, by theinterference of multiple beams as well as by the multiple exposureof two beam interference, all fourteen 3D Bravais lattices canbe generated. Based on the approach, high quality 3Dholographic templates belonging to the desired lattice structurecan be fabricated with a simplified experimental set up.

Digital Holography: Compared to conventional holography,digital holography involves recording of holograms on a CCD/CMOS camera instead of a photographic recording medium,which renders an important addition degree of freedom, namelythe computational degree of freedom. Hologram is reconstructedthrough computational algorithms, allowing the incorporationof digital processing tools to extract object information in totalityi.e, both amplitude and phase information. We have developedmany techniques for digital holographic object reconstructionfor improvement in terms of object resolution, speed ofreconstruction, recognition and classification of 3-D amplitudeand phase objects, wavelet processing of object information,opto-electronic 3-D correlation, 3-D microscopy etc.

More information and details on these research findings canbe learned from the list of publications and the reference there in,available at http://web.iitd.ac.in/physics/fac/jj.htm

Fig. 1: Holographic lithographic geometry and photonic structures

05Invited Articles



06

In today’s “knowledge-based” society, it isbecoming increasingly imperative forcompanies to “mine” the new knowledge and

technology generated by universities. Why? Becausethe knowledge and technology transfer that resultfrom industry-university collaborations can be usedby companies to accelerate innovation and deliverbusiness impact.

There are various ways that companies can tapinto the new knowledge and technology generatedby universities – from hiring graduates tocommissioning contract research.....

Partnerships between companies anduniversities are particularly critical as we facemounting issues around energy, water, food and climate. Neverbefore have non-business issues been so relevant to business.Industry and academia must team up to move our world towardsa more sustainable future. Only China, Germany and Japan havemade substantial commitments in this area. And never beforehave non-technical innovations been so critical to business success– innovations such as novel business models or managerialpractices that are often enabled by information andcommunication technologies.

The Changing Landscape for Universitiesand IndustryUniversities worldwide are confronted with diminishing growthin public funding (e.g. Japan is decreasing by 1% per year), andthey are being forced to adapt by raising funds from private

sources. But, as the above figuresindicate, they probably can’t counton a commercialization bonanza inthe foreseeable future. However, theymust take steps to make the difficulttransition by changing theiracademic mindsets and movingtowards becoming more firmfriendly and solutions-oriented.

But it’s not just universities;industry is also changing at a fast pace. With increasingpressureto focus internal R&D activities on short-term payoffs, manycompanies are beginning to pursue their long-term strategiesthrough collaborations with universities. As a result, newpartnerships are emerging that will ultimately change theroles of both.

From Science to Business: How FirmsCreate Valueby Partnering

with Universities

Often referred to as a “sleeping giant”in scientific literature, India seems

to be waking out of its slumber, says arecent global research report on “Research andCollaboration in the new Geography of Science” by Thomson Reuters.

If the current trajectory continues, the study estimates, India’sproductivity would well be on par with that of most G-8 nationswithin eight years and could even overtake them between2015 2020......

Between 1993-2003 and 2004-08:• In Chemistry, India’s research output increased from 21,206

world publications to 33,504• From a 2.8 per cent share of the world output in pharmacology

and toxicology, India’s share is up to 4.25 per cent• Output in engineering rose from 2.69 per cent to 3.57 per cent• Microbiology saw publication output rise from 1.62 per

cent to 2.79 per cent

Agricultural engineering, Tropical Medicine, Organic Chemistryand Dairy & Animal Science are areas of research where India ispicking up well besides Crystallography and Textiles.......

India’s Labs Waking

Papers

Up, Surge inGlobal Science

SourceIndian Express 11.1.2010

Voices

SourceProf Georges Haour,2010



India’s InnovationSourceMint 13.12.09

A recent New York Times (NYT) story raised an interestingquestion. Why has India not produced a Google or anApple? The question can be reframed broadly: Why is

India a laggard when it comes to innovation?

There is probably no single answer. The stifling environmentfor the first four decades after Independence (others will say theproblem dates back to ancient India), lack of funding opportunitiesfor innovators and easy availability of off-the-shelf technologiesare some of the contributing factors. Each of them is astory in itself.

Today, there is no shortage of innovators who want to createnew products. NYT noted the case of Sloka Telecom in Bangalore.The company is developing a new range of radio systems that areless expensive than those used by companies today. One could saythe future belongs to such innovations. Yet, companies such asSloka Telecom have difficulty in finding venture capital funding.

One reason for this problem could be the absence of deepfinancial markets that permit funnelling of money into riskyventures. This is to be distinguished from risk-taking. After all,Indian investors are hardly risk-averse when it comes to equitymarket investments. The problem here is that of time horizons ofinvestors. Investing in a risky product is very different frominvesting in a risky stock. Liquid financial markets can make adifference here.

This is one end of the Indian innovation problem. The otherside is probably more complicated. Why have Indian companiespreferred to buy ready-made technologies instead of producing

them at home? For the first 40 years after Independence, Indiawas a closed economy, one that did not have to export goods forits survival. The result was that returns from scientific research,which yields innovative products, were much lower than outrightpurchase of technology. Lack of export markets virtually killedinnovation at home. In all other “late industrializing” economiessuch as South Korea and Taiwan, innovation was the driver ofgrowth. India never took that road.

Now, of course, the bitter fruits of that past are ripe. Companiessuch as Sloka Telecom worry where the money will come fromwhile export markets will require a repertoire of innovations thatIndia does not have, for the moment. For India, the time is shortand the road to innovative products long.

Science isfor people

Latha Jishnu in conversation with Richard Jefferson, oneof the world’s top technologists

Indian scientists musteschew their tribalism andabsolutism and shouldlearn to be more aware andinclusive to create the rightproducts and servicesfor society......

SourceBusiness Standard 22.6.10

Problems

07Voices



Prof. Bodh Raj Mehta

Prof. M. Jagadesh Kumar was born inMamidala, Andhra Pradesh, India. He receivedthe M.S. and Ph.D. degrees in electricalengineering from the Indian Institute ofTechnology (IIT), Madras, India. From 1991 to1994, he performed postdoctoral research inthe modeling and processing of high-speed

bipolar transistors withthe Department ofElectrical and ComputerEngineering, Universityof Waterloo, Waterloo,ON, Canada, where healso did research onamorphous silicon TFTs.From July 1994 toDecember 1995, he wasinitially with theDepartment of

Electronics and Electrical CommunicationEngineering, IIT, Kharagpur, India, and then,he joined the Department of ElectricalEngineering, IIT, Delhi, India, where he becamean Associate Professor in July 1997 and hasbeen a Full Professor since January 2005. Heis currently the NXP (Philips) Chair Professor

Prof. M. Jagadesh Kumar

established at IIT Delhi by PhilipsSemiconductors, Netherlands (now NXPSemiconductors India Pvt Ltd). His researchinterests include nanoelectronic devices,device modeling and simulation fornanoscale applications, integrated-circuittechnology, and power semiconductordevices. He has published extensively in theseareas of research with three book chaptersand more than 145 publications in refereedjournals and conferences.

Prof. Jagadesh Kumar made significantcontributions to innovative semiconductordevice design and modeling for (i)Nanoscale CMOS technology and (ii) high-speed switching applications. His work ledto novel designs and improvedunderstanding of high-speed lateralbipolar transistors, Nanoscale MOSFETs,Polysilicon Thinfilm Transistors and high-voltage Schottky rectifiers. Prof. Kumar’swork has been extensively cited ininternational journals and books.

Schottky rectifiers are extensively used

in high speed switching applications.However, they suffer from large reverseleakage current and soft breakdown. Forthe first time, Prof. Kumar has shown thatusing a dual Schottky contact in a lateraldevice, the breakdown voltage of Schottkyrectifiers can be made very sharp inaddition to achieving a low forward dropand negligible reverse leakage current. Hisother important invention is making anOhmic contact conduct only in onedirection. This rectifier is named as ShieldedOhmic Contact (ShOC) rectifier whichexhibits very low forward voltage drop andalso low leakage current.

He has recently invented a newmechanism for increasing the current gainof bipolar transistors. These twotechnologies are the backbone of the VLSIchip manufacturing. Prof. Kumar hasshown that in the proposed structure,known as the Surface Accumulation LayerTransistor (SALTran), the current gain isenhanced using a physical mechanism notvisualized so far. The SALTran exhibits a

08


Distinguished Facu

Faculty Profile

Prof. Bodh Raj Mehta is currently aProfessor in Department of Physics at IndianInstitute of Technology Delhi, New Delhi,India. He received M.Sc. (Physics) degree from

Punjabi UniversityPatiala, Punjab in 1977and M. Tech in SolidState Materials from IITDelhi in 1979. He receivedPhD degree in Physics inthe area of thin filmphotovoltaic devicesfrom IIT Delhi, did his postdoctoral studies atUniversity of BritishColumbia, Vancouver,

Canada and subsequently joined Departmentof Physics at IIT Delhi in 1985.

Prof. Mehta has worked on a number ofimportant research issues related to scienceand technology of thin film and

nanostructured materials. One of hisimportant research contributions has been theconceptualization of the usage of nanoparticlecharacteristics for solving some of the naggingmaterial problems inhibiting the performanceof switchable mirror devices. The novelty ofusing ‘nanoparticle route’ lies in realizing theimprovements without altering the physics andchemistry of the Rare Earth-Hydrogeninteraction. This path breaking work hasresulted in the development of a ‘newgeneration’ of nanoparticle based switchablemirror devices. Blue shift in optical absorptionedge, enhanced surface area atnanodimensions resulted in improved colourneutrality, improved optical contrast, fasterresponse time and enhanced hydrogencatalytic activity mediated by surface states.A unique core-shell structure has been used tostabilize Rare Earth nanoparticle againstoxidation while allowing two-wayhydrogenation through the protective oxide

layer. These results have wide rangingimportance in the research areas related tohydrogen storage and sensing.

His research on the study of Pd nanoparticleinvolving in-situ investigations of hydrogeninduced changes in the current transportmechanism and structural modifications hasgiven fresh insights into one of the mostimportant (due to its direct relevance in anumber of advance technologies) and probablythe most complicated (from physics andchemistry point of view) solid-gas moleculeinteraction. The novelty of his research approachhas been to separate the interfering effects ofhydrogen induced topographical, structural andelectronic changes by a precise control ofnanoparticle size and interparticle separation.Based on the improved understanding of thegas- solid interaction, this study resulted in a‘proof of concept’ for developing a new type ofhydrogen and deuterium sensor having a pulsed



Continued on page 10

Continued on page 10

current gain similar to that of a SiGe HBT.He has shown that the using a combinationof SALTran concept and SiGe base, bipolartransistors with current gains exceeding10,000 can be realized – a significant resultin the area of bipolar transistors.

A recent invention by Prof. Kumar is inthe area of Polysilicon TFTs with threeorders of magnitude less leakage current.He has shown that using his multi-gateconcept, the pseudo-subthresholdconduction observed in conventional TFTscan be completely eliminated leading to asubstantial reduction in OFF state leakagecurrent without affecting the ON statecurrent. Since these devices are verycommonly used in active matrix LCDdisplays, a low leakage polysilicon TFT willhave a significant commercial utility. Forthe first time, Prof. Kumar has proposed aSchottky collector bipolar transistor witha collector breakdown as large as 30 Vwhich was thought to be not possibleearlier. This invention is expected to widenthe high speed applications of BJTs.

In addition, Prof. Kumar has made manytheoretical contributions inNanoelectronics as evidenced by hispublications.

Prof. Kumar has also made significantcontributions to the development ofcompact models required in circuitsimulation applications. His model for thebase transport time of SiGe HBTs is widelyused and considered an important work.He has also developed a unified thresholdvoltage model and IV model for the dual-material gate Nanoscale MOSFETs. For thefirst time, he also developed a simpleanalytical model for the strained siliconNanoscale MOSFETs which are consideredto be the future of CMOS technology. Hisrecent work includes introducinginnovative device design in Tunnel FieldEffect Transistors for future CMOSapplications to meet the ITRS guidelinesin terms of ON current and a pragmaticthreshold voltage and designingLDMOSFETs for wireless base stationapplications.

The inventions made by him are appliedin nature and have a large potential forcommercial exploitation. The work done byProf. Kumar, therefore, has led to filing fivepatent applications by IIT Delhi. Prof. Kumarhas carried out four sponsored projects twoof them involving defense. In the first project,Prof. Kumar has demonstrated India’s firstHigh voltage SiC Schottky rectifier with abreakdown voltage of 1000 V. In the secondproject, he has designed a 40 GHz HighElectron Mobility Transistor which was thenfabricated by Solid-state physicslaboratory, Delhi.

Prof. Kumar has played a prominent rolein bringing together researchers working inNanotechnology area at IIT Delhi. Thenanotechnology group, of which he is aprincipal lead investigator along with twoother colleagues, is currently working onbuilding a state-of-the-art nanotechnologycenter focusing on non-silicon based devicesand applications. This is a highlyinterdisciplinary effort with deliverables

09


Faculty of IIT Delhi

Faculty Profile

response with fast response of the electroniceffect and high sensitivity of the topgraphicaleffect. The results of the above investigationshave been published in high impact factorjournals like Advanced Materials, AdvancedFunctional Materials, Applied Physics Letters,Physics Review and Nanotechnology.

Prof. Mehta has carried out research on thebasic issues related to the effect ofnanoparticle size on the structuraltransformation in oxide nanoparticle systems.His research has led to the observation of animportant effect of “size-dependentconductivity-type inversion” in single-phasecopper oxide nanoparticles. At present hisresearch group is involved in understandingthe mechanisms of filamentary growth andcharge migration in oxide nanorod structuresfor resistive memory devices. This activity isaimed at developing single nanorod basedmemory devices. His present research

activities are planned towards understandingthe structural and electronic nature of theinterface between two dissimilar materialslike organic-inorganic bilayers, junctionsbetween carbon structures andsemiconductor layers, nanostructures - bulkinterfaces, semiconductor – self assembledmonolayer assemblies. The outcome of theseresearch efforts are expected to haveimportant implication towards improvingthe performance of resistive memory, thinfilm transistor, photovoltaic and lightemitting devices.

His research career started under theinspiring and able guidance of Prof K.L.Chopra from whom he learnt the art ofcombining basic science issues withtechnological applications and this had madea lasting impact on his researchmethodology. The above mentioned researchhas been made possible by the hard work of

about 15 PhD and about 60 MTech, MScand BTech students under his supervision. Hisresearch has resulted in about 125publications in international peer reviewjournals and more than 100 presentations innational and international conferences. ProfMehta has organized a number of importantnational and international conferencesincluding International Conference onNanoscience and Technology (ICONSAT2006), a flagship activity of Nano MissionProgramme. He has been inspired by theexceptionally brilliant scientific leadership ofProf. C.N.R Rao and thoroughly enjoyedinteracting with Prof.Rao during theorganization of ICONSAT 2006 and otherNano Science and Technology activities. Hehas participated in a number of programmesfor popularizing science and has also givenexpert commentary in 13 episodes of apopular science TV serial ‘Nano Duniya’


Foundation for Innovation and Technology Transfer Forum - August 2010Foundation for Innovation and Technology Transfer Forum - August 2010

ranging from Organic based thinfilm devicesto fuel cells.

Prof. Kumar is also the lead principalcoordinator of Center for excellence innanoscale devices, circuits and systems. Heis also the coordinator of VLSI Design Toolsand Technology program which runs acompletely industry sponsored M.Techprogram and research programs related toindustry applications

Dr. Kumar is widely recognized for his workand has received several recognitions. He is aFellow of the Indian National Academy ofEngineering and the Institution of Electronicsand Telecommunication Engineers (IETE), India.He is an IEEE Distinguished Lecturer of theElectron Devices Society and has given popularlectures to large audiences on topics related toNanoelectroncs and Nanotechnology. He is amember of the EDS Publications Committeeand the EDS Educational Activities Committee.He was a recipient of the 29th IETE Ram Lal

Continued profile of Prof. M. Jagadesh Kumar

Wadhwa Gold Medal for his distinguishedcontribution in the field of semiconductordevice design and modeling. He was also thefirst recipient of the ISA-VSI TechnoMentorAward given by the India SemiconductorAssociation to recognize a distinguishedIndian academician for playing a significantrole as a Mentor and Researcher. The award,presented on 31 July 2007 by Dr. R.Chidambaram (Principal Scientific Advisorto Government of India), includes a citationand Rs. 200,000 reward. He is also a recipientof the 2008 IBM Faculty Award inrecognition of professional achievements.

He is an Editor of the IEEE Transactionson Electron Devices. He was the lead GuestEditor for (i) the joint special issue of theIEEE Transactions on Electron Devices. andIEEE Transactions on Nanotechnology(November 2008 issue) on NanowireTransistors: Modeling, Device Design, andTechnology and (ii) the special issue of theIEEE TRANSACTIONS ON ELECTRON

DEVICES on Light Emitting Diodes (January2010 issue). He is the Editor-in-Chief of theIETE Technical Review and an AssociateEditor of the Journal of ComputationalElectronics. He is also on the editorial boardof Recent Patents on Nanotechnology,Recent Patents on Electrical Engineering,Journal of Low Power Electronics, and Journalof Nanoscience and Nanotechnology. He hasreviewed extensively for differentinternational journals.

Prof. Kumar is passionate about histeaching which has often been rated asoutstanding by the Faculty AppraisalCommittee, IIT Delhi. He thinks that feedbackthat he receives from the students is one ofthe motivating factors for him to be aconstant learner which in turn makes him aneffective teacher. Prof. Kumar practices Karateand takes out time to be in the gym regularly.

Continued profile of Dr. Bodh Raj Mehta

10 Faculty Profile

broadcasted by Doordarshan.

Prof. Mehta has completed a jointresearch project with Nanostrukturtechnik’Group at University of Duisburg-Essen,Germany. Under this project, a novelintegrated approach has been used for thesynthesis of size selected, monosized,monocrystalline and spherical nanoparticlesand nanoparticle-thin film compositestructures having controlled configuration.This well controlled and precise fabricationmethodology has been used for realizing‘nano’ effects in a number of devices. On thebasis of ‘scientific excellence’, Director Generalof Research, European Commission hasselected this project as a success story ofproject and an article on the achievements ofthis project is included in a book of 75 successstory projects: ‘Marie Curie Actions - InspiringResearchers’.

At IIT Delhi Prof. Mehta has beenresponsible for initiating a number of groupresearch activities at IIT Delhi. He hascoordinated the establishment of a state of

the art Unit on Nanoscience at IIT Delhi. Healso initiated the establishment of FocussedIon Beam and Field Emission ScanningElectron Microscopy Facility as a joint facilitybetween Unit on Nanoscience andDepartment of Mechanical Engineering. Heis the co-coordinator of IIT Delhi andLockheed Martin research collaboration inthe area of Bio-Nano and Nanotechnology.He is Principal Investigator and Coordinator(India) of ‘EU-Indo Forum on Nanomaterialsfor Energy’ in which 6 institutes from Indiaand 7 institutes from Europe areparticipating. He is an active participant ofthe tri-national collaboration onNanotechnology under IBSA (India, Braziland South Africa) Initiative and is the ProjectCoordinator (India) of ‘Advanced Materialsfor Energy’ of the IBSA programme. As aprincipal investigator he has successfullycompleted a large number of researchprojects from Indian and internationalfunding agencies. He has participated in anumber of successful collaborations withresearchers from Indira Gandhi Center forAtomic Research, Kalpakkam, National

Physical Laboratory, Delhi and Inter UniversityAccelerator Centre, Delhi,

In recognition to his contributions in thearea of science and technology of thin filmand nanostructured materials, Prof. Mehtahas received DAAD fellowship of GermanAcademic Exchange Programme, Medal ofMaterials Research Society of India andMarie Curie International Research Fellowshipof European Commission. He is on theeditorial board of Journal of Nanoscienceand Nanotechnology and Journal of NanoEducation. He is the member of ProgrammeAdvisory Committee (Condensed MatterPhysics and Material Science) and Memberof the PAC on Physics, Astrophysics and Lasersof the International Division of DST. He is amember of the National Committee onStandardization for Nanotechnology, Bureauof Indian Standards, New Delhi and amember of the Interdisciplinary Research andSelection Committee of CSIR.

Prof B R MehtaDept. Physics, IIT Delhi

Email : [email protected]

Prof M Jagadesh KumarDept. Elect, Engg., IIT [email protected]

[email protected] Forum Newsletter-July 2010.pmd 8/13/2010, 4:41 PM10


On 29th March 2010, FITT organized the second “ChemicalIndustry Academia Meet 2010“ at IIT Delhi. Apart fromfostering bonds with the industry, the thematic meet

aimed to understand the research needs of the healthcare industryand explore areas of cooperation. The programmeinvolved presentations by members of the Instituteand Industry respectively. The Institute presentationshighlighted its innovations and infrastructural andintellectual strengths. The industry expectedlyoutlined its various R&D needs and helpeddraw interesting research themes. Moreimportantly, this regional ChemicalIndustry and Academia meet hascreated a forum for constant dialogue.

Prof. Surendra Prasad (Director –IIT Delhi) flagged off the meeting withhis welcome address wherein he exhorted the industry towardsactive collaboration with the academia. In her inaugural address,Dr. (Mrs) Jayashree Gupta (CMD, Indian Drugs and PharmaceuticalsLtd. – Gurgaon ) highlighted the important role that academiacan play by technological interventions in industry that needs acontinuous flow of new knowledge and innovations. Theproceedings of the meet were moderated by Dr. Anil Wali (MD –FITT). The presentations from the industry were made by Dr. RamaMukherjee (MD, ARA Healthcare Pvt. Ltd.), Dr.PK Bhatnagar (Sr.VP – Ranbaxy) and Sh Pankaj Sharma (CEO – LeadInventTechnologies ). The Institute perspective was shared by Dr.

Chemical IndustryAcademia Meet 2010

FITT organized the “Automobile Industry-IIT Delhi Meet” aspart of its regular industry-academia program on April 24, 2010during I2TECH - Open House 2010 celebrations at IIT Delhi. Theindustry panellists / participants included Mr.V.S.Goindi (Chairman,The Goindi Group), Mr. Ravi Kapoor (MD, Faros Simulation), Mr. V.K. Sethi (CoEIAI), Mr. B. S. Yadav ( Hero Honda), Mr S. Ghoshal(Rico Auto), Vikram Puri (Minda) and Mr. Anuj Guglani. Prof.S . K . S a h a(MechanicalEngg., IIT Delhi )gave thew e l c o m eaddress. Prof.

Automobile Industry-Academia Meet @ I2Tech

T.K.Chaudhuri (Biological Sciences), Dr. A S Rathore ( Deptt. ofChemical Engg), Prof B Jayaram (Chemistry) and Dr. N G Ramesh(Chemistry). Prof B Bhargava (AIIMS) provided an interestingfeature on medical research and more specifically spoke on theStanford-India Biodesign Programmme. The meeting was attendedby about twenty faculty members and several research andgraduate students. The industry participants included Mr. AkashBhavsar, (MD, SkyQuest, Ahmedabad), Dr S Sengupta, (Sr Advisor,CII), The meeting concluded with a comprehensive follow-updiscussion round-up and thanks giving by Prof HM Chawla ofDept. of Chemistry.

K.Gupta (Mechanical Engg., IIT Delhi) who chaired the sessionactively coordinated the industry-academia presentations /discussions and referred to those areas of IIT Delhi that were ofinterest to the automobile industry. The IIT Delhi faculty memberswho spoke / interacted on the occasion included by Prof. L. M. Das(IDDC), Dr. V. K. Vijay (CRDT), Prof. S Mukherji (Mechanical), Prof. K.R. Rajagopal (Electrical), Dr. Ananjan Basu (CARE) and Prof. S. Kar

(Electrical). Dr. VM a t s a a g a r(Civil) proposedthe vote ofthanks.

11IIT Delhi News

rnet.inFITT Forum Newsletter-July 2010.pmd 8/13/2010, 4:42 PM11


An Electro-Oculogram(EOG) based system forperforming the basic

menu operations on a computerhas been developed here jointly bythe Computer Services Centre andCentre for Biomedical Engineering.The system enables a severelyhandicapped person to transmitcomments to the appropriatemenu options on a computer screenby sheer flick of eyes.

The system implies biometrictype conversion of mechanical impulse of the eyelid into electricalsignal which can be interpreted by sensor based interface kit

Electro-Oculogram (EOG) BasedMultimode Controller

attached to the CPU of acomputer.

The lab prototype developedhad been put on a tentative trial.The proposed design is simple,flexible, portable and powerefficient. According to the needsof the user, the unit can becustomised.

Applications : Rehabilitationof spinal injury andneuromuscular disorder patients.

Other prospective applications : Clinical Diagnosis, Defence.

12 Technology Profile

A common path and non-mechanical scanning phase-shifting lateral shearinginterferometer based on a

novel liquid-crystal cell has beendeveloped by the Instrument DesignDevelopment Center at IIT Delhi. Interference fringes with improvedcontrast and high-spatial carrierfrequency have been achieved withthe help of this device. The devicegenerates both circular as well aslinear fringe patterns under separategeometrical conditions. The designof the device was further modifiedto generate linear fringe patternswith large area illumination.

The main advantages of the liquid-crystal phase-shifting lateralshearing interferometer (LC-PS-LSI) are non-mechanical scanning,

Method and Set-up for GeneratingPhase-Shifting and High SpatialCarrier Frequency Interferograms

common-path, compact and low-cost device and hence can beused for real time applications. Thecompact interferometric device caneasily be mounted on optical set-ups comprising a collimated or aconverging laser beam and opticalmicroscopes and required phase-shifting interferograms can beobtained by applying the voltageto the liquid-crystal cell withoutmechanically moving anycomponent in the optical set-up.This is one of the most importantadvantages of the present inventionover the conventional phase-shifting interferometers, such as,

Michelson and Mach-Zehnder interferometers, where at least oneof the optical components is mechanically moved to generate phase-shifting interferograms.

for 3D-Surface Topography



13Miscellaneous

Distinguished Alumnus Prof. A.J. Paulraj (Ph.D. Electrical 1973),Emeritus Professor at Stanford University and Visiting Professor,Bharti School - IIT Delhi gave a talk on ‘Why We Need High TechIndustry’ on 21st June’ 10 while on a visit to the Institute. He wasfelicitated for his accomplishment of receiving the Padma Bhushanaward for his immense contributions to Science and Engineering

Distinguished Alumnus Manvinder Singh (Vindi) Banga (B.Tech.Mech - 1975) & Ex - President (Foods, Home and Personal Care),Unilever visited the Institute on 9th April 2010. He was felicitatedfor his achievement of receiving the Padma Bhushan Award forhis immense contributions to Trade and Industry and delivered alecture on ‘IIT And Beyond’.

SnippetsProfessor N. K. Gupta, has been conferred with J.C. Bose Memorial Award by the Prime Minister of India during the inaugural

function of the 97th Indian Science Congress held on January 3, 2010 at Thiruvananthapuram.

Professor S.K. Koul, has been selected for Shri Om Prakash Bhasin Award for year 2009 in the field of Electronics and InformationTechnology.

Mr. Arvind Chel ( Research Scholar, CES – IIT Delhi ) & Ms. Geetanjali Kaushi ( Research Scholar, CRDT – IIT Delhi ) have beendeclared the winners of the “NEXT GLOBAL INNOVATION CHALLENGE” for their innovation titled “ A Novel Hybrid Biomass SolarCook Stove”. They were felicitated during the Golden Jubilee Alumni Convention, organized by IIT,Kanpur on 19.06.2010.

1) Waterless, Odour-less General Taps For Isolated ToiletKiosksDr. V. M. Cheriar, Centre For Rural Development &Technology (2 licenses)� M/s. Goodyield Environmental Technologies Pvt. Ltd.,

Kolkata� Moneyplant Estates Pvt. Ltd., Bangalore

2) Impact Hammer Assembly, Dr. Suresh Bhalla, Civil Engg.Deptt.� M/s. Inov., Delhi

IP LicensesExecuted



14

New Innovations / Opportunitiesfor IP Licensing

SL.No Title of the Invention PI/Deptt.

01 A novel Self-excited brushless Single Phase Induction Generator(SEIG) integrated Prof SS Murthy, Electricalwith robust automatic electronic voltage regulator

02 A novel closed loop speed control using carrier space vector pulse width modulated Prof JK Chaterjee, Electricaldirect torque control scheme for induction motor drive

03 Voltage and frequency control of self excited induction generator(Brushless Generator) Prof JK Chaterjee, Electricalin isolated three phase four wire system under balanced and unbalanced operations

04 Power Factor Correction based Flyback Fed Permanent magnet brushless DC Prof Bhim Singh, Electricalmotor Drive for Fan Application

05 Flexport : A2D, flexible, portable multi plug Circuit pad Dr Deepti Gupta, Textiles

06 Squatting type Urinal pans for women toilets Dr V Charier, Rural

07 Fixation of silver nanoparticle on textile substrates for durable antimicrobial finish Prof AK Agarwal, Textiles

08 An apparatus and method for parasitic Communication Prof Ranjan Bose, Electrical

09 An apparatus and method for personal area Network and body area network using Prof Ranjan Bose, ElectricalMagnetic coupling

10 Method and Set-up for generating phase-Shifting and high spatial carrier frequency Dr DS Mehta, DesignInterferograms for 3D-surface topography And for obtaining linear fringe patterns

11 A stapler for stapling pins of different designs Dr Amitoj Singh, Design

12 A novel variant of L-Asparaginase and its Use thereof Dr Biswajit Kundu, Biology

13 A Novel vibration sensor for concrete Structures Dr S Bhalla, Civil

14 A method for invoking emergency response In an Electronic Data Acquisition System Prof S Kar, Electrical

15 Optimal Distribution of complexity for partial Cancellation in VDSL Dr S Prakriya, Electrical

Applications are invited from qualified professionalsworking in Industry and Research Organizations for aunique knowledge augmentation and skill enhancement

programme at IIT Delhi. This involves asemester-long registration for a regular PGcourse. Course fees range from Rs. 15,000/- toRs. 20,000/- (industry professionals) and Rs. 6000/- to Rs. 8000/- (academic/government personnel)for a 42 hour lecture course. In the case of a fewselect courses, on-site course delivery using thetwo way video link systems may be considered.

Professional Candidates’

All major disciplines of Science and Engineering, and also relevantcourses from the Humanities, Social Science and Management streamswhich are being conducted at IIT Delhi are covered.

Eligibility: Degree in Engineering orMasters Degree in Science, Management orany other Post Graduate Degree with relevantindustry experience. The two semester sessionsin the academic year start in the months ofJuly and January ,the exact dates being notifiedin advance.

Registration ProgrammeContact:

[email protected]

IPR



List of forthcoming HRD programmes(July-December 2010)

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Title

SWAT Workshops in India

Short course on “Advances in EarthquakeEngineering”

Training programme on “Bioinformatics andComputational Biology”

Workshop on Financial Engineering

Workshop on “Recent Advances in EnvironmentFriendly Technologies in the Petroleum Sector”

Workshop on “Cleaner Power GenerationChallenges Ahead”

Short course on “Transportation and Storage ofFlyash”

Short Course on “Economics and Financing ofRenewable Energy Technologies”

Training programme on “BiotechnologyTreatments of Biological Wastes and Wastewater”

Date

July 12-16

July 30-31

Aug. 10 - Sept. 20

Sep. 11

Sept. 16-17

Oct. 6-8

Nov. 15-17

Dec. 6-10

Feb. 2011

Faculty/Dept.

Prof. A K Gosain, Civil

Dr. V Matsagar, Civil

Prof. B Jayaram, Chemistry

Dr. Nomesh Bolia, ME

Prof. D K Sharma, Energy

Prof. D K Sharma, Energy

Prof. V. K. Agarwal, ITMMEC

Prof. T C Kandpal, Energy

Prof. S N Mukhopadhyay &Prof. T R Sreekrishnan,Biotechnology

Courses are Participation-Fee based; *Sponsored by CPCB, New Delhi for Govt. Oganisations & participation fee based for private entities

The New Corporate Members of FITT (Jan-June 2010)Pitney Bowes Clutch Auto

Auto Ignition Marathon Electric India

Associated Traders Deki Electonics .

Anindus Consultants Dabur Research Foundation

Indication Instruments Scientech Technologies

Bajaj Steel Industries Alchem International

Intex Technologies S.P. Singla Constructions

Bony Polymers I2 Investments India

BCH Ltd SRF Ltd.

FITT-Corporate MembershipFITT invites the industry / industry associations / R&D

organizations and financial institutions to become corporatemembers of FITT at a nominal fee. A corporate member clientcan participate in technology transfer and joint R&D

programmes of the Institute on a priority basis with FITTproviding the interface. Membership Form can be mailed onrequest or can be downloaded from www.fitt-iitd.org. [email protected]

Professional Development



Development ProjectsExamples of Development / Investigative Projects

Analysis and design validation of mounting bracket assembly (Phase-III)

Trans Fatty Acids in Indian Food Items and Effect of Frying Temperatureand time on the quality of edible oils

Optimal Operation of ETP at Jagatjit Industries Ltd.

Motorbike Design Research using Eye Tracking

Area flood drainage study for the 2x660 MW Kawai Thermal Power Project,Kawai, Baron

Technical Consultancy for Implementation of HCBS on 15KMs stretch ofAmbedkar Nagar to ISBT Corridor

Concept Design for CNG / Electric four wheel open public taxi

Quality by Design (QbD) based Process Development for Biosimilar Products

Batch Digester Scheduling in Pulp Industry

Design and Development of Isolation System for Sonar Transducer Array

Analysis of two-phase flow through fine channels of Porous Substrates

Process development and assessment of microbial culture for therapeuticprotein production

Characterization of underwater acoustic transmission property of materials

CARS – GMSK and Impulse Radio Noise Suppression Schemes for VLFCommunication

New-Gen Polyolefin Films for Hygiene Applications (Year-1)

VALORGAS - Valorisation of Food Waste to Biogas

STP AT Greater Noida – Design, Process Validation, Technical Evaluationand Process Optimization

Brand Identity Design for BML Munjal Foundation

Study of Combustion of low calorific value gas for commercial application

Design, Development and Testing of New Chemical Hoods as per ASHRE 110

Principal Investigator (Prof/Dr)

AK Darpe

KK Pant

TR Sreekrishnan

Amitoj Singh

AK Gosain

Geetam Tiwari

LK Das

AS Rathore

MA Shaik

AK Darpe

Shantanu Roy

Saroj Mishra

Arun Kumar

Arun Kumar

AK Ghosh

VK Vijay

AK Mittal

Amitoj Singh

Anjan Ray

PMV Subbarao

Team

Chairman, Governing Council : Prof. Surendra Prasad, Director,IIT Delhi

Managing Director: Dr. Anil Wali

Executive Team : Shri. K.K. Roy, Shri ParthaBhattachary, Shri Mohit Mahajan

Staff : Shri A Gupta, Mrs. S Lamba,Shri RK Mehta, Shri VBhattacharya, Shri J Singh,Shri U Aswal, Shri M K. Rajoriya

Ed.: Anil Wali, [email protected]

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Foundation For Innovation and Technology TransferIndian Institute of Technology, DelhiHauz Khas, New Delhi-110 016, Phone: 91-11-26857762,26581013, 26597164, 26597153Fax: 91-11-26851169, www.fitt-iitd.org

IIT Delhi Research Reviews (www.iitd.ac.in):� Nanoscience & Nanotechnology, July 2009� Transportation Research at IIT Delhi, Oct. 2009� Advanced Materials Research at IIT Delhi, April 2010

Projects


Download - Golden jubilee iit d-2011

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