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Micro-Transfer-Printing (µTP):Technology Overview
Chris Bower, X-Celeprint ([email protected])
IEEE CPMT Orange County Chapter Meeting
Irvine, CA
Feb. 11, 2014
© 2014 X-Celeprint Ltd. 1
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Outline
• Micro-Transfer-Printing: Origins & Science
• Micro-Transfer-Printing: Technology
• “Printable” Systems & Applications
2© 2014 X-Celeprint Ltd.
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“Micro-Transfer-Printing”
• Utilization of a elastomer stamp to deterministically transfer microscale devices from their native substrates onto non-native substrates.
3© 2014 X-Celeprint Ltd.
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µTP Lineage
© 2014 X-Celeprint Ltd. 4
• 2003-2006: Core technology invented by Professor John Rogers group at UIUC.
• 2006: Semprius spins-out of UIUC to commercialize transfer-printing.
• 2011: Semprius focuses on the manufacture of high-concentration photovoltaics (HCPV)
• 2013: X-Celeprint acquires the exclusive rights to Micro-Transfer-Printing. Semprius retains rights for photovoltaics.
• X-Celeprint is the sole developer and licensor of Micro-Transfer-Printing technology and will support end-users with application-specific process development, technology-transfer and hardware.
• Headquarters: Tyndall National Institute, Cork, Ireland
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Origins of µTP Technology“Soft lithography” for large-area, flexible devices using low-temperature (organic) semiconductor materials
i. stamp
ii. apply metal
iii. contact
iv. “print”
Epitaxial Lift-off (ELO)Yablonovitch 1987
Micro-contact printing
ELO, “soft lithography” and MEMS are all precursors
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Micro-Transfer-Printing
devices are transferred onto the stamp
devices are printed onto non-native target substrate
Nature Mater. 5 33-38 (2006)
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transfer-stamp (PDMS)
native substrate with “printable” devices
devices are attached to stamp only by Van der Waals forces
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Kinetically Controlled Adhesion
slow lift-off fast lift-off> 10 cm s-1
“The adhesion between the solid objects and the stamp is rate-sensitive owing to the viscoelastic behavior of the elastomer”
Nature Mater. 5 33-38 (2006)© 2014 X-Celeprint Ltd.
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Competing Adhesion (“pick-up”)
8© 2014 X-Celeprint Ltd.
Stre
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Stamp Speed
Elastomer Stamp
Native Substrate
Device
• During “pick-up”, the stamp must move at high speed to take advantage of the strong stamp-device adhesion
Device/Substrate
Stamp/Device
“pick-up”
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Example: “picking-up” evaporated Au
9Langmuir, Vol. 23, No. 25, 2007
(tridecafluoro-1,1,2,2-tetrahydrooctyl) trichlorosilane (FOTCS)
Stre
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Competing Adhesion (“print”)
10© 2014 X-Celeprint Ltd.
Stre
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Stamp Speed
Non-Native Substrate
Elastomer Stamp
Device
print Device/Non-Native Substrate
• Stamp must move slowly to utilize weak bonding between the stamp and device
Stamp/Device
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slow lift-off fast lift-off> 10 cm s-1
Slow Fast
Pick-up
Printing
Nature Mater. 5 33-38 (2006)© 2014 X-Celeprint Ltd.
Example: Single-Crystal Silicon Beams
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Outline
• Micro-Transfer-Printing: Origins & Science
• Micro-Transfer-Printing: Technology
• “Printable” Systems & Applications
12© 2014 X-Celeprint Ltd.
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Micro-Transfer-Printing Technology
Native “Source” Wafer
Elastomer Print Head (Stamp)
Non-Native “Target” Substrate
Populated Stamp
© 2014 X-Celeprint Ltd.
Key Features• microstructured elastomer stamp coupled to a precision
motion controller• manipulate objects that are too small, numerous, fragile, or
otherwise difficult to handle by other means• massively parallel room-temperature process• enables cost-effective sparse 3D heterogeneous integration• enables re-use of growth substrate• decouples growth and usage of high-performance materials• tolerant to wafer size mismatch • placement accuracy* +/- 1.5 µm (3-sigma)• process yields* > 99%
* application dependent
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Stamp Technology
i. Prepare master, e.g. by photolithography
ii. Cast prepolymer (PDMS)
iii. Cure stamp; separate from master
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• Stamps are fabricated by casting PDMS against a microfabricated master wafer.• Stamps as large as 150mm (active area) have been developed.
SEM of stamp surface
© 2014 X-Celeprint Ltd.
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Sparse Heterogeneous Integration
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Source Wafer (Example InP HBT)
Non-native “Target” Substrate
1st transfer 2nd transfer
produce devices at high density on native growth substrate
use small devices only where needed in the target application
© 2014 X-Celeprint Ltd.
“Area Magnification”• With µTP, the source of the high-
performance devices (eg. InP HBTs) can be used to fully populate a much larger target substrate.
• For example, a 4” InP wafer might be used to populate a full 200/300mm wafer.
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Wafer-to-Wafer µTP Tool
• Designed to populate a 150mm diameter area in one print cycle.
• Process tact time < 30 seconds
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Wafer-to-Panel µTP Tool
Stage (x, y)
Print Head (z, θ, Tx, Ty)
Optics (x, y, z)
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• Designed to populate Gen2+ (400mm x 500mm) glass and plastic panels
© 2014 X-Celeprint Ltd.
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µTP Hardware
18© 2014 X-Celeprint Ltd.
Production W2W Printers at SempriusCPV Pilot Plant in Henderson, NC.
• X-Celeprint will design, manufacture and support µTP hardware.
• The print tools can be customized for specific applications.
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X-Celeprint Operations
19© 2014 X-Celeprint Ltd.
Not-for-profit Research InstituteResearch Triangle Park, North Carolina4”, 6”, 8” and 12” capabilityExperts in wafer-bumping and RDL
X-Celeprint Headquarters100mm III-V cleanroomExperts in photonics and III-V processing
• X-Celeprint has current µTP and wafer processing capability in North Carolina• A new µTP tool is scheduled to be installed within Tyndall in Q2
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X-FAB
20© 2014 X-Celeprint Ltd.
Not-for-profit Research InstituteResearch Triangle Park, North Carolina100mm, 150mm, 200mm and some 300mmExperts in wafer-bumping and RDL
X-Celeprint Headquarters100mm III-V cleanroomExperts in photonics and III-V processing
X-FAB, a sibling company of X-Celeprint, is considering the possibility of a “heterogeneous integration” foundry that would offer Micro-Transfer-Printing and Wafer-Level interconnect processes.
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Outline
• Micro-Transfer-Printing: Origins & Science
• Micro-Transfer-Printing: Technology
• “Printable” Systems & Applications• Single Crystal Silicon
• Silicon Integrated Circuits
• Compound Semiconductors
21© 2014 X-Celeprint Ltd.
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Printable Systems
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Most materials of interest are challenging to “pick-up” in their as-grown form.
Si <111>
Primary strategy to achieve “pickable” devices is to utilize engineered sacrificial layers underneath the device layers of interest.
© 2014 X-Celeprint Ltd.
Stre
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Stamp Speed
Device/Substrate
Stamp/Device
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Printable Single-Crystal Siliconi. Silicon-on-insulator (SOI) wafer
ii. Photolithography and etch top silicon to expose buried oxide (blue)
iii. Etch buried oxide to undercut the structures
iv. Retrieve structures
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Printable single-crystal silicon can be achieved using SOI wafers, where the buried oxide layer serves as the sacrificial layer.
© 2014 X-Celeprint Ltd.
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Examples of Printed Silicon
24© 2014 X-Celeprint Ltd.
J. Micromech. Microeng. 22 (2012) 055018 (7pp)
small 2012, 8, No. 6, 901–906
Si Micro Masonry Flexible Si Solar Cells Imbricate Scales
Nature Materials 7, 907-915 (2008).
http://rogers.matse.illinois.edu
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Printable Integrated Circuits
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• In 2007 Semprius/XFAB began developing technology for making “printable” integrated circuits• The platform utilized was the commercially available 0.6um (2P,3M) SOI-CMOS process (XT06) available from XFAB in Erfurt, Germany.• The XT06 process uses a SOI substrate with a 5um thick device silicon layer and a 1um thick buried oxide (BOx) layer.
XT06 Cross-section
~3 – 4um
5um
1um
© 2014 X-Celeprint Ltd.
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Printable IC Process Flow
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Process for making high-density printable IC chips
© 2014 X-Celeprint Ltd.
Street ~ 12um
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Printed IC Display Backplane
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50um
• The pixel driver ASIC has > 250 transistors
• The chip includes both digital and analog circuits
© 2014 X-Celeprint Ltd.
9um thick ASIC
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Backplane Printing Yield
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192 x 240 chip array5” QVGA 46,080 pixel driver ICs99.97% total yieldRepair techniques have been developed to further increase yield.
Glass panel
Routine print yields greater than 99.9%
© 2014 X-Celeprint Ltd.
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Placement Accuracy
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Placement accuracy of printed ASICs was +/- 1.5um (3 sigma)
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Post-Print Processing
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• Once print adhesive is cured the populated substrate can be processed just like any other device substrate (wet processing, photo, dry etching, etc…)• In this case, the printed ASICs were embedded in a spin-on dielectric before metallization.
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Interconnected Backplane
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Anode connection pad
Data wires (2) and Power wire
Row-Select wires (2)
370 um pitch
The printed ASICs are thin (~10um), so standard spin-on planarization and thin-film metallization can be used for interconnection
© 2014 X-Celeprint Ltd.
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Applications of Printable CMOS
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RFID Smart Cards
Flexible Electronics
Flexible Display Backplanes Advanced Digital X-ray
Get CMOS performance on non-native substrates!
© 2014 X-Celeprint Ltd.
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Outline
• Micro-Transfer-Printing: Origins & Science
• Micro-Transfer-Printing: Technology
• “Printable” Systems & Applications• Single Crystal Silicon
• Silicon Integrated Circuits
• Compound Semiconductors
33© 2014 X-Celeprint Ltd.
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Growth Substrate
Epitaxial Devices Layers(InGaAs, InGaP, GaAs, InP, etc…)
Selective Release Layer (Al>0.6GaAs, etc…)
1. Epitaxial Growth (MOCVD, MBE, etc…)
2. Patterning of material down to substrate
3. Formation of anchor and removal of release layer
anchor
“ready to print”
Printable Compound Semiconductors
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Epitaxial compound semiconductors are very practical systems for printing because lattice-matched sacrificial layers can be introduced under the device layers.
© 2014 X-Celeprint Ltd.
growth substrate can be re-used after printing
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Examples of Printed GaAs-based Devices
35© 2014 X-Celeprint Ltd.
J. Yoon, S. Jo, I.S. Chun, I. Jung, H.-S. Kim, M. Meitl, E. Menard, X. Li, J.J. Coleman, U. Paik and J.A. Rogers, “GaAs Photovoltaics and Optoelectronics Using Releasable Multilayer Epitaxial Assemblies,” Nature 465, 329-333 (2010).
http://rogers.matse.illinois.edu
Flexible GaAs Solar Cells
43% efficient solar cell printed to as-fired ceramic. Cell contains InGaP, InGaAs, GaAs.
600um x 600um x 10um
GaAs MeSFETS on Plastic
Applied Physics Letters 87, 083501 (2005)
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Elements of the Semprius Concentrator Photovoltaic (CPV) Module Design
Secondary ball lens
Monolithic backplane
Low-profile module enclosure
Silicone-on-glass primary lens
Surface-mount interposer
Transfer printed microcells
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Concentrator Photovoltaics (CPV) and Energy Extraction
Conventional approach to CPV Smaller is better.
• more efficient extraction of useful energy• easier to expel waste heat• reduced materials requirements & weight performance & cost advantages
Need to overcome assembly challenges• reduce per-part cost• maintain precise alignment
• The most efficient solar PV technology for geographies with strong solar resources • Focus sunlight onto high-efficiency multi-junction cells
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The Semprius CPV module—high performance, manufactured consistently
0
0.2
0.4
0.6
0.8
1
1.2
0 20 40 60 80 100 120
Curr
ent
(A)
Voltage (V)
Semprius RDD-3XX modules - Indoor IV Curves
334 329 333 340
Measurement Conditions Helios 3198 Solar Simulator DNI (W/m2): 1000 Spectrum: AM1.5D* Tcell (°C): 25° * Matched using isotype cells
Up to η = 35.6% independently verified
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Semprius projects
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Heterogeneous Integration of Lasers on Silicon
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Heterogeneous Integration of Lasers on Silicon
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• adhesiveless “direct” printing• laser fabricated post printing• etched facet laser• optical power of 15mW per facet at
room temperature
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Applications for Printed Lasers
• Heat Assisted Magnetic Recording (HAMR)
• Silicon Photonics
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Silicon Photonics
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• A good laser remains a challenge for silicon photonics• UCSB, Intel and others have demonstrated promising “hybrid” lasers that require III-V
materials to be coupled to an underlying silicon waveguide• µTP represents a cost-effective solution for sparse integration of this III-V gain media
http://www.semiconductor-today.com/news_items/2010/AUG/INTEL_050810.htm
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Printable Gallium Nitride
GaN-based materials or devices (LEDs, etc…) grown on (111) Si are also printable. A thin layer of silicon can be removed from underneath the device layer.
The anisotropic nature of the Si etchant is utilized to anchor the material to the wafer
InGaN
(111) Si
Tether
A. “ready-to-print” InGaN LED B. After pick-up
A B C
Broken tethers
C. Printed InGaN LED on plastic
Rogers, J. A., et al. (2011). Unusual strategies for using indium gallium nitride grown on silicon (111) for solid-state lighting, PNAS
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Application: Printed iLEDs
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IEEE Photonics Vol. 4, No. 2, April 2012
http://rogers.matse.illinois.edu
Flexible GaN-based iLED ArraysFlexible GaAs-based (red) iLED Arrays
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Summary
• µTP allows manipulation of objects that are too small, numerous, fragile, or otherwise difficult to handle by other means
• µTP provides mature electronic materials on non-native substrates with integration-ready solutions for many applications
• X-Celeprint is ready to support interested end-users with application specific development, technology transfer and hardware
© 2014 X-Celeprint Ltd. 46
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Thank You! Questions?
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Acknowledgements: John Rogers, UIUC original inventors and many examples shown hereSemprius developed Micro-Transfer-Printing technology, printable 3J
solar cells and printable ICsXFAB, Tyndall National Institute, Seagate, CDT