![Page 1: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/1.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
ENERGY EXTRACTIONDevelopment of
Semi-Conductor Switches
Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev, Knud Dahlerup-Petersen TE-MPE-EE
![Page 2: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/2.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
OUTLINE
S.C.E.E.: Why? Where? When? Current development and topologies IGxT x = B or C is the question Design Criteria 600 A SM18 Summarizing Questions Where are we today?
![Page 3: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/3.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Reminder
![Page 4: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/4.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
WHY ? THREE DIFFERENT REASONS
1 - Demand coming from MSC group (SM18) for Extraction Systems : Fast (< 1 ms), High Current (10 kA, 30 kA and 14 kA), Medium Energy (4 – 5 MJ).
Fast (< 1 ms) means; can not be done with Electro-Mechanical Breakers!» Alternative: Semi-Conductors
2 - LHC: Increasing worry 600 A spare Energy Extraction Switches/Systems
Back-Up solution in case of major events or degrading… Maintenance (preventive and corrective) is time and resource consuming
3 – (HL-)LHC: Development of New Inner Triplet Magnets most likely will need Fast, High Current Energy Extraction Systems – In house knowledge and experience will be present!
![Page 5: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/5.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
WHERE & WHEN ?TWO MAIN LOCATIONS:
1 - SM18 for Extraction Systems : FRESCA HFM 10 kA circuit - 2016-2017 D Cluster 30 kA circuit - 2018 A Cluster 14 kA circuit - 2019
2 – LHC tunnel: Replacement of existing 600 A Energy Extraction Systems
UA and UJ33 areas radiation free – LS3 RR areas rad- tolerant version – LS3
2a - LHC: New Inner Triplet Magnets – LS ?
![Page 6: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/6.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Current Development
1 – High Current for SM18: 10 kA – 30 kA
Design phase
2 – Medium Current for LHC tunnel 600 A
Test phase (Re-design)
![Page 7: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/7.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Different Topologies
2 – Medium Current for LHC tunnel Redundant (min. 2 elements in series) No elements in parallel (600 ADC max) Bi-polar (current in both directions)
semi-conductor is mono-polar
1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (~2kA per branch) Mono-polar (current in one direction)
![Page 8: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/8.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Semi-Conductors candidates
IGBTIGCT
3.5 kA
![Page 9: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/9.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Insulated Gate Bipolar Transistor (IGBT)
Developed based on (power) MOSFET technology in the 1980s Combines the power handling capability of the bipolar transistor and the
advantages of the isolated gate drive of the power MOSFET. It has the advantages of being a minority carrier device leading to good
performance in the on-state, even for high voltage devices. With the high input impedance of a MOSFET it can be driven On or Off with a very
low amount of power (voltage-driven). The voltage drop in the on-state for high current DC applications between 1.5 to
3.5 V
IT IS NOT A BI-POLAR DEVICE! Current only in one direction.
![Page 10: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/10.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Integrated Gate-Commutated Thyristor (IGCT)
Developed in the 1990’s based on Gate-Turn-Off Thyristor (GTO) and the Gate Commutated Thyristor (GCT).
The IGCT is basically an improved GTO with also a four layer npnp structure with anode, cathode and integrated gate terminals. The integration of the gate terminals leads to extreme low coupling inductances allowing a faster turn-off process with lower losses.
The result is a combination of the strengths of both the GTO and the Insulated Gate Bipolar Transistor (IGBT) without the complex control unit of the GTO and the snubber-needs of the IGBT.
Voltage drop in on-state for high current DC applications between 1.5 V and 2.5 V
![Page 11: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/11.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Design criteria 1
ReliabilityMajor failure causes due to
Thermal design (DC application) Device voltage rating - stray
inductances Cosmic Rays (FIT see next slide)
Forward losses (Overrating!)Commercial Availability
![Page 12: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/12.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Design criteria 2
The Failures In Time (FIT) rate of a semi-conductor is the number of failures that can be expected in 109 hours of operation
or for 500 devices during 2 million hours (228 years) strongly dependent on the applied voltage
small dependence on temperature
Typical FIT numbers for IGCT: 100 & Gate driver: 200 => 300IGBT: 250 & Gate driver: 150 => 400
![Page 13: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/13.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
600 A
![Page 14: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/14.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
600A Energy Extraction Systems
202 systems installed in the LHC tunnel Corrector circuits with stored energy between 2.2 and
150 kJ
In 15 different locations; 8 x UA parallel service tunnel and 6 x RR and 1 x UJ tunnel
caverns
Systems developed in close collaboration between CERN and the Budker Institute of Nuclear Physics (BINP), Novosibirsk, Russia.
Reminder
![Page 15: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/15.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Remember: Different Topologies
2 – Medium Current for LHC tunnel Redundant (min. 2 elements in series) No elements in parallel (600 ADC max) Bi-polar (current in both directions)
semi-conductor is mono-polar
1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (2kA per branch) Mono-polar (current in one direction)
![Page 16: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/16.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Why worry after LS1?
This is not building 281
![Page 17: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/17.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
![Page 18: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/18.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Why worry after LS1?
Still 50 spare breakers available Spare consumption rate (before LS1) approx. 10/year
5 years of “operation” Spare consumption rate (after LS1) ??????
< 5/year but not less than 2 !
Manufacturer closed premises at the end of 2012 and the production suspended
Breakers are now obsolete Spare Systems reduced from 23 to 7 due to water
incident in UA67. So far, unknown if and how much we can recuperate the damaged systems
![Page 19: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/19.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Global planning 600 A EE Change (partially ?) to semiconductor-based switches, used
as static breakers IGBT (Insulated-Gate Bipolar Transistor) or IGCT (Integrated
Gate-Commutated Thyristor) R&D on-going / necessary:
2012 development and testing of mono-polar Lab version2013 development and testing of Bi-polar Lab version 2014/2015 Design, development and testing of prototype2016 Final Design: proto to series2017/2018 Market Survey/Tender
![Page 20: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/20.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Achievements Based on IGCT (Integrated Gate-Commutated Thyristor)
R&D on-going: 2012 development and testing of mono-polar Lab version
2 IGCT and 1 Diode in series 2013 development and testing of Bi-polar Lab version
2 IGCT and 1 Diode in series + anti-parallel
2 IGCT and 1 Diode in series
IGBT study on goingCandidates found
![Page 21: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/21.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
IGCT semi-conductor
![Page 22: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/22.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Monopolar IGCT 600 ADC Switch
![Page 23: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/23.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Monopolar Switch Test Circuit
![Page 24: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/24.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Energy Extraction 600A
![Page 25: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/25.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
On-State Characteristics Durchlassmessung für Anfrage CERN (10-064) bei 25°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2.2 2.4 2.6 2.8 3 3.2 3.4
VF, VT in [V]
IF, IT
in
[A
]
IGCT Switchtwo IGCT + one diode) @ 25°C
Voltage drop at 85 ⁰C
2.7
![Page 26: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/26.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
single components @ 25°CDurchlassmessung für Anfrage CERN (10-064) bei 25°C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
0.6 0.7 0.8 0.9 1 1.1 1.2
VF, VT in [V]
IF, IT
in
[A
]
5SDD 51L2800 (DV 545.50) PP13.48 (5SPA 91W4599)
On-State Characteristics
Single Components @ 25°C
![Page 27: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/27.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Bi-Polar IGCT 600ADC switch
Diode is needed to cover the reverse-voltage during extraction
![Page 28: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/28.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Bi-Polar IGCT 600ADC switch
![Page 29: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/29.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Electronics IGCT
Electronics comes from existing 600 A EE systems (3 cards modified by Bozhidar) Optical transmission of signals (Semi-Conductor type independent) Redundancy in electronics. One Interface PCB per IGCT in one branch
![Page 30: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/30.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Energy Extraction 250A
0
50
100
150
200
250
0
50
100
150
200
250
0
50
100
150
200
250
14:38:16.335 14:38:16.345 14:38:16.355 14:38:16.365 14:38:16.375 14:38:16.385 14:38:16.395
Time
0
50
100
150
200
250
Input_Current
Upper_IGCT_Current
Dump_Res_Current
Voltage_Across
I, [A]
IIGCT, [A]
IDUMP, [A]
U, [V]
![Page 31: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/31.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
17:49:20.924 17:49:21.124 17:49:21.324 17:49:21.524 17:49:21.724 17:49:21.924 Time
-20
-15
-10
-5
0
5
10
15Currents, [A]
-20
-15
-10
-5
0
5
10
15Voltage, [V]
Input_CurrentUpper_IGCT_CurrentDump_Res_CurrentLower_IGCT_CurrentVoltage_Across
Transition pos to neg – 40A/s
Circuit Current
Dump Resistor Current
Voltage EE system
Current negative IGCT
Current positive IGCT
Less problems at 10A/s
and
Power Converter settings
can be optimised
![Page 32: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/32.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Next steps 1 Choice of semi-conductor:
IGBT slightly higher forward losses compared to IGCT
Workaround possible by overrating the device
Available in Press-Pack or Modules Wide choice of manufacturers
(Infineon, ABB, Westcode)
Voltage driven («static» switch device «fail safe») Snubber capacitors and varistors needed Driver needed
![Page 33: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/33.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Next steps 2 Choice of semi-conductor ctd.:
IGCT Lower forward losses Available in press pack only ABB and Mitsubishi are today the only manufacturers Current controlled («active» switch device.. less fail safe) Snubbers needed (Varistor) but simpler than IGBT Integrated driver
![Page 34: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/34.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Next steps 3 For LHC application; any Semi-Conductor EE system will need
water-cooling Total forward losses: 3V x 600 A = 1800 W x 2 systems = 3.6 kW per rack Water cooling capacity in the tunnel areas available?
Power Converter Boost Voltage: enough to overcome extra voltage drop?
Seems ok for 200 oo 202 systems if UF is lower or equal to 3.5V
Power Converter 0 ampere crossing: can it be regulated better?
Desperate need for a designer!
![Page 35: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/35.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Modular Design Independent of choice of semi-conductor:
Identical Electronics Chassis with optical in/output Predefined Power Chassis with either IGBT, either
IGCT switch, including driverseventually included dump-resistorSimilar as the power part of the EPC power converter
One water in- and outlet per rackWater-cooling topology is a lot(!) simpler (higher
reliability) for modules compared to press-packs
![Page 36: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/36.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
General
Rack-Layout
![Page 37: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/37.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
BudgetsChange (partially – only rad free areas) to solid state breakers
Semi-conductor technology EE systemsBudget for R&D?Budget for replacement of 202 systems IGBT: 5.8 MCHF Budget for replacement of 202 systems IGCT: 6.7 MCHF
Only UA/UJ areas (rad free) would be 75% of total
Plan B: New Electro-Mechanical Circuit Breaker Budget for replacement of 202 systems EM-CB: 5.1
MCHFSimilar problems as today to be expected
but before getting there.. development starting from scratch – Very time consuming and expensive study!
![Page 38: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/38.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
SM18
![Page 39: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/39.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Remember: Different Topologies
2 – Medium Current for LHC tunnel Redundant (min. 2 elements in series) No elements in parallel (600 ADC max) Bi-polar (current in both directions)
semi-conductor is mono-polar
1 – High Current for SM18: Not redundant (no elements in series) Many elements in parallel (2kA per branch) Mono-polar (current in one direction)
![Page 40: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/40.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Parallelism - Design Highest available device is rated 5500A (IGCT)
or 4800 A (IGBT) But for DC applications this means 2500A in order to stay
in the SOA (Safe Operating Area) A5 surface dimensions to give an idea
For 10 kA this means roughly 4 devices parallel Major advantage: UF -25%
For 30 kA this means 12 devices parallel
![Page 41: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/41.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Master-Slave drivers commercially available
• Up to 4 IGBTs in parallel: hardware commercially availableFor a larger number of IGBTs =>
Careful synchronising on the high level electronics side. Still to be investigated.
![Page 42: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/42.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Parallelism - Design Transient processes commutating very fast very
high currents creates very high voltage spikes Stray inductance to be kept as low as possible
1 uH of non compensated stray inductance will lead to kV spikes
Important parameter to stay within design voltage
Need for intelligent geometrical mechanical designTrade-off efficient cooling & stray inductance
Need for multi-level snubber compensationIGCT is slower than an IGBT: smaller/less snubbers can
be used
![Page 43: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/43.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
SnubbersNeeded to reduce DV/Dt during switchingSeveral layers of snubber capacitors over:
the complete switch each semi conductor-branch each semi conductor
![Page 44: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/44.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Simulations – electrical and thermal
Simulations should start as soon as possible Simulate parasitical capacitances and inductances
Narrow down semi-conductor brand and type and get pspice models
If not available create our own…
![Page 45: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/45.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
SM 18 Budgets EE switches
Fresca – HFM – 2nd circuit 10 kA Budget switch: 100 – 125 kCHFOperational 2016 !!!
Cluster D circuit 30 kA Budget switch: 300 – 350 kCHF Operational 2017? Tbc..
Horizontal Banc A circuit 14 kA Budget switch: 150 – 175 kCHF Operational 2019? Tbc..
![Page 46: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/46.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Summarizing Questions
In spite of the already huge job done so far and the gathered knowledge and experience there are still important questions:
Paralleling large numbers of IGBTs or IGCTs. Geometric mechanical topology. Clear ideas up to 10kA (since it can fit to
one rack). 14-30kA circuits layout not so clear. Still to be investigated. Design will be Trade-off between efficient cooling & stray inductance.
Where to focus? Bus bars topology. For 30kA at 1.7 A/mm2 => 17650 mm2 =>42x42cm!
Water cooled bus bars ? Indirect cooling? Topology should be chosen also according to SM18 infrastructure
Switch-on-off criteria – No overcurrent during ramp-up? Will the last off-switching branch take all current (ns range)?
![Page 47: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/47.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Where we are today?
Crucial point: continue only by ourselves (CERN re-inventing the wheel)
or Study existing installations in collaborating institutes
• 2016.. not much time => no time for trial-and-error• Main responsibility still LS1 and, after re-start, LHC operation• Not to copy but learning from their experiences• Desperate need for Electro-Mechanical CAD designer
• (preferably with plumbing experience)
![Page 48: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/48.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
SM18and/or LHC
Dump-Resistors
![Page 49: MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE ENERGY EXTRACTION Development of Semi-Conductor Switches Alexandre Erokhin, Gert Jan Coelingh, Bozhidar Panev,](https://reader035.vdocuments.net/reader035/viewer/2022062315/5697bf9f1a28abf838c94a76/html5/thumbnails/49.jpg)
MPE-TM 17/10/2013 G.J. Coelingh TE-MPE-EE
Compact Dump-Resistors
Development of Energy Absorbers for medium- to high energy applications :
• Compact design for use in LHC underground locations• Primary cooling by immersion into dielectric, heat-transfer liquid• Built-in liquid-to-water heat exchanger• Modular design to facilitate change of resistance value (typically
10 to 300 mOhm).• For energy absorption up to 10 MJ.• Development cost + prototype: 150 kCHF
• Agreement of principle for collaboration with BARC, India