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NanoScience Laboratory
Nanophotonicswith silicon nanocrystals
Lorenzo Pavesi
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NanoScience Laboratory
Material of choice for microelectronics:
• Advanced fabrication capabilities • Mass production• Cheap
Introduction – Silicon photonics
Courtesy of Intel.
Solarpowerninja.com
CMOS compatibility
http://www.galleries.com/Rock_crystal
Silicon photonicsIntegrated “On-chip” optical elements
SiSiO2
• Semiconductor• Band-gap:1.12 eV
• Refractive index:3.4
• Transparent in IR
• Insulator• Band-gap:
8.9 eV• Refractive index:
1.46 • Transparent in
visible and IR
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NanoScience Laboratory
Luxtera single-chip 100-Gbps transceiver targets multiple applications
• The new transceiver chip, which measures 5x6 mm, offers 4x28-Gbps transmission over single mode fiber.
• The device features waveguide, waveguide structures, modulators, couplers, and photodetectors integrated at the wafer level. The photodetectors are germanium, but applied to the wafer using the same CMOS processes as the other devices. A single CW laser powers all four channels; it attaches to the CMOS wafer via a hybrid integration process.
November 8, 2011
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NanoScience Laboratory
Projected integration density
Silicon photonic NOC
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NanoScience Laboratory
Silicon Nanocrystalsa material to widen the scope of silicon
photonics
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
![Page 7: Nanophotonics with silicon nanocrystals - unitn.itscience.unitn.it/~semicon/presentations/Vigoni2012.pdf · NanoScienceLaboratory Luxtera single-chip 100-Gbps transceiver targets](https://reader030.vdocuments.net/reader030/viewer/2022040703/5dd0ca3ed6be591ccb62b59b/html5/thumbnails/7.jpg)
NanoScience Laboratory
Silicon quantum dots
50 nm
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
![Page 9: Nanophotonics with silicon nanocrystals - unitn.itscience.unitn.it/~semicon/presentations/Vigoni2012.pdf · NanoScienceLaboratory Luxtera single-chip 100-Gbps transceiver targets](https://reader030.vdocuments.net/reader030/viewer/2022040703/5dd0ca3ed6be591ccb62b59b/html5/thumbnails/9.jpg)
NanoScience Laboratory
Micro-disk resonatorsWhispering-gallery mode (WGM) resonators:
Light recirculation by total internal reflection.
• Free-standing geometry(Silicon-rich oxide film [SRO] on silicon pedestal)
• Far field detection based on radiative loss of optical resonator
SRO film thickness:200 nm
µ-disk diameter:7 µm
4 µm diameter
|E|2
Si pedestal
SEM imageMicroscope image
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NanoScience Laboratory10/3522/11/2012
Active microdisks
Low dimensional Si (Si nanoclusters)
2
Whispering gallery mode microdisk-cavity:
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NanoScience Laboratory
Q factors > 3000
Optics Express 16, 13218 (2008)
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NanoScience Laboratory
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NanoScience Laboratory
~200 - upper limit on cavity Q
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
Photoluminescence: excitation by optical pumping
Electroluminescence: excitation by electrical injection
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NanoScience Laboratory
Injection into a dielectric
• The only way is to use the tunneling effect
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NanoScience Laboratory
Injection rate engineering
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NanoScience Laboratory
nc-Si/SiO2 Multilayer LED
• Confined growth of nanocrystals• Better oxide quality• Control over the oxide thickness
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NanoScience Laboratory
-6 -4 -2 0 2 4 610
-13
10-11
10-9
10-7
10-5
(2 nm SiO2 / 3 nm SRO)
(2 nm SiO2 / 4 nm SRO)
| Gat
e cu
rren
t | (
A)
Gate voltage (V)
Reverse biasForward bias
EL data
points
Low onset of EL voltages, < 3.2 V
J. Appl. Phys. 106, 033104 (2009)
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NanoScience Laboratory
20
Si-NC LEDon a CMOS wafer
CMOS LED
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NanoScience Laboratory
21
Si-NC LEDon a CMOS wafer
CMOS LED
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NanoScience Laboratory
Graded gap active layer
Large nanocrystals: Easy injectionSmall nanocrystals: high emission
Injection rate engineering
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NanoScience Laboratory
10-3
10-2
10-1 1
0.00
0.05
0.10
0.15
0.20 (2 nm SiO2 / 3 nm SRO)
Optimized
(2 nm SiO2 / 4 nm SRO)
Po
we
r p
lug
-in
eff
icie
ncy
(%
)
Current density (mA / cm2)
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
![Page 26: Nanophotonics with silicon nanocrystals - unitn.itscience.unitn.it/~semicon/presentations/Vigoni2012.pdf · NanoScienceLaboratory Luxtera single-chip 100-Gbps transceiver targets](https://reader030.vdocuments.net/reader030/viewer/2022040703/5dd0ca3ed6be591ccb62b59b/html5/thumbnails/26.jpg)
NanoScience Laboratory
Optical gain
JAP 96, 5747
expON PL
QZ Q SiZ nc P Si nc
O
gI
JI
T d dI
IT I0
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NanoScience Laboratory
How we measured gain
JAP 96, 5747
I0IT
expON PL
QZ Q SiZ nc P Si nc
O
gI
JI
T d dI
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NanoScience Laboratory
Summary on optical properties of Si-nc
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NanoScience Laboratory
N4
N3
N2
N1
fast
spontaneous
fast
stimulated
Auger
pump
4 levels system model
1
4
2
3
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NanoScience Laboratory
Model for the 4 levels
Si=O bond formed
at the interface of
the Si-nc with the
matrix
A. Filonov, S. Ossicini, PRB 65 195317 (2002)
Ground state
Excited state
oxygen
oxygen
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
![Page 33: Nanophotonics with silicon nanocrystals - unitn.itscience.unitn.it/~semicon/presentations/Vigoni2012.pdf · NanoScienceLaboratory Luxtera single-chip 100-Gbps transceiver targets](https://reader030.vdocuments.net/reader030/viewer/2022040703/5dd0ca3ed6be591ccb62b59b/html5/thumbnails/33.jpg)
NanoScience Laboratory
Silicon nanocrystal nonlinearity
Silica
Bulk Silicon
GaAs
Si-ncs
n2= (1.54x10-16) cm2/W
n2= (1.59x10-13) cm2/W
n2= (4.5x10-14) cm2/W
n2= (2 ÷ 8x10-13) cm2/W
n=n0+n2I
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NanoScience Laboratory
All optical switching
l = n d
A. Martinez et al. Nanoletters (2010)
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NanoScience LaboratoryA. Martinez et al. Nanoletters (2010)
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NanoScience Laboratory
Active microdisk for optical switching
The top of the waveguide is free
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NanoScience Laboratory
Active microdisk for optical switching
Silicon nanocrystals
silicon
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NanoScience Laboratory
Optical bistability
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
![Page 40: Nanophotonics with silicon nanocrystals - unitn.itscience.unitn.it/~semicon/presentations/Vigoni2012.pdf · NanoScienceLaboratory Luxtera single-chip 100-Gbps transceiver targets](https://reader030.vdocuments.net/reader030/viewer/2022040703/5dd0ca3ed6be591ccb62b59b/html5/thumbnails/40.jpg)
NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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NanoScience Laboratory
Use of solar spectrum in crystalline silicon cells
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NanoScience Laboratory
Use of nanocrystals: tandem cells
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NanoScience Laboratory
Use of nanocrystals: downshifter layer
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NanoScience Laboratory
The structure of the device
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NanoScience Laboratory
No. Active layerPeriod of multi-layer
Layer thickness
Q1 SRO/SiO2 5 2 nm +1 nm
Q2 SRO/SiO2 5 3 nm + 1 nm
Q3 SRO 20 nm
Q5 -Si/SiO2 5 3 nm + 1 nm
Q7 SRN/SiO2 5 3 nm + 1 nm
Q8 SRO/Si3N4 5 3 nm + 1 nm
Q9 SRN/Si3N4 5 3 nm + 1 nm
The structure of the device
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NanoScience Laboratory
-1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.2 0.41E-12
1E-11
1E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
ICu
rre
nt (A
)I
Voltage (V)
SRO/SiO2
SRO
a-Si/SiO2
I-V curves measured in dark
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NanoScience Laboratory
Photoresponsivity
400 500 600 700 800
10-5
10-4
10-3
Q1(SRO/SiO2=2nm/1nm)
Q2(SRO/SiO2=3nm/1nm)
Q3(SRO)
Q5(-Si/SiO2=3nm/1nm)
Q7(SRN/SiO2=3nm/1nm)
Ph
oto
resp
on
siv
ity (
A/W
)
Wavelength (nm)
Q5
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NanoScience Laboratory
a-Si/SiO2 shows the best PV effect
0.00 0.05 0.10 0.15 0.200
1
2
3
4
5
6
7
Cu
rre
nt
(A
)
Voltage (V)
3.4 A
120 mV
FF: 30.2
Isc
: 6 ± 1 A
Voc
: 220 ± 1 mV
Pmax
: 40.8 W/cm2
Rserial = 23.6 kΩ
Rshunt = 51.2 kΩ
Rserial = 6.41 kΩ
Rshunt = 54.1 kΩ
Lambert W function
Conversion efficiency 0.41 %
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NanoScience Laboratory
Si-nc as down-shifter layer
Silicon nanocrystals
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NanoScience Laboratory
Si-nc as down-shifter layer
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NanoScience Laboratory
400 500 600 7000.0
0.2
0.4
0.6
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1.0
Op
tica
l fu
nctio
n
Wavelength (nm)
TSRO
RSRO
ASRO
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NanoScience Laboratory
400 500 600 7000.0
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tica
l fu
nctio
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Wavelength (nm)
TSRO
RSRO
ASRO
0.0
0.1
0.2
0.3
Ph
oto
resp
on
siv
ity (
A/W
)
PRARC
(b) PDS-2
PRARC calculated photoresponsivity with a passive layer
ARCPR
ARC
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NanoScience Laboratory
400 500 600 7000.0
0.2
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1.0
Op
tica
l fu
nctio
n
Wavelength (nm)
TSRO
RSRO
ASRO
0.0
0.1
0.2
0.3
Ph
oto
resp
on
siv
ity (
A/W
)
PR
PRARC
(b) PDS-2
PR measured photoresponsivityPRARC calculated photoresponsivity with a passive layer
PL+ARCPR
ARCPR
ARC
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A maximum enhancement of the internal quantum efficiency of 14%
400 500 600 7000.0
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0.0
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oto
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on
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ity (
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)
Inte
rnal q
ua
ntu
m e
ffic
iency e
nh
an
ce
me
nt
PR
PRARC
INT
(b) PDS-2
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NanoScience Laboratory
Modeling of Si-QD solar cells
Laboratory reference
LaboratoryDS layer
CommercialReference
CommercialDS layer
16.50 % 17.56 % 14.20 % 15.11 %
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Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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Si-nc as imaging agents
Preparation:
1. Sonication of poroussilicon
2. Photoinduced hydrosilylation reaction between undecylenic acid and hydrogen passivated Si-nc surface
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Si-nc as bioimaging agent
COOH
COOH
CO
OH
Hydrophilic alkyl-capped Si-nc
High quantum yieldQY ~ 30 %
TEM image
Luminescent clear suspensionin different solvents (water, ethanol).
No change in PL lineshapein different solvents.
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Si-nc as bioimaging agent
1. Si-nc-COOH can be storedin ethanol for long periods
of time.
2. In water Si-nc-COOH slowlyoxidized and dissolve.
Biodegradability is achieved.
Si-nc-COOH without physical coating:
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Si-nc-COOH with physical coating:
Biodegradability is mantained.
Si-nc as bioimaging agent
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DCA was not added
Bio imaging
• DCA (sodium deoxycholate monohydrate ) shows similiarbehaviour as SDS
• DCA less toxic than SDS
Fluorescence images of SKOV-3 cells incubated with Si-nc-COOH+DCA for 30 min.
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Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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NanoScience Laboratory
Silicon quantum dots
• Light emission
• Optical gain
• Nonlinear optical effects
• Photoresponse
• Biocompatibility
• Interface properties
• Sensitization action
• …
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Si-nc as Er3+ sensitizer
Si-nc
Er3+
Sensitization:
Si-nc upon excitation (optical or electrical)transfers its energy to nearby Er3+ ions.
• Increase in effective excitationcross-section for up to 5 ordersof magnitudes(≈ 10-21 → ≈ 10-16 cm2)
• Broadband excitation
4I13/2 - 4I15/2 Er3+ radiative transitions falls in the third telecom window (maximum transparency
of silica fibers).
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Si-NCs:Er LEDs
• SiOx: LPCVD ~ 50 nm, Si excess: 9-16 at. %;
• SiOx anneal: 900°C, 1 h;
• Er implantation: 20 keV, 1x1015/cm2;
• Er post-implantation anneal: 800°C, 6 h
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Si-NCs:Er LEDs - Results
External
Quantum
Efficiency
0.55 % in DC
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Si-NCs:Er LEDs - Results
External
Quantum
Efficiency
0.55 % in DC
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Conclusions
• Silicon nanocrystals are a viable platform to improve-enable-widen the scope of silicon photonics
• A lot of new physics can be found in an already mature research field such as Silicon Photonics
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Acknowledgments
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Acknowledgments