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Nanotechnology and the status of
Korea Advanced Nano Fab Center
Apr. 3. 2006
CEO & President of KANC
Joong Won Lee
- The 3rd Korea-US Nano Forum –
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Contents
1. Introduction
2. History
3. Participating Organizations
4. KANC and Gwanggyo Techno Valley
5. FAB Layout and Facility
6. FAB Service
7. Customer Service System
8. Applications
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Introduction
KANC : “Korea Advanced Nano Fab Center”
A non-profit organization supported by Ministry of Science & Technology of Korea
A national infrastructure for the nano technology development in the field of compound semiconductors, non-silicon technology and other emerging technology
1. Supporting universities and research institutes
2. Supporting industries
3. New model of government funded R&D initiatives
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History
Beginning of Construction 2004. 6
Test & Measurement Services Started 2006.2
Incorporated 2003.12
Completion of Clean Room 2005. 12
Official Opening & FAB Service Starts 2006. 4. 26
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Participationg Organization
The Six Consortiums of KANCThe Six Consortiums of KANC
KORE ELECTRONICS TECHNOLOGY INSTITUTEKorea Institute of Science and Technology
Budget of 173 million dollars for 5 years programBudget of 173 million dollars for 5 years program
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KANC Building
FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)
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Gwanggyo Techno Valley
R&D Cluster for high technology & business development(30Km south from Seoul)
Korea Advanced Nano Fab Center
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KANC Building
FAB Building : 3,500 m2 (37,600 ft2)R&D / Venture Building : 46,650 m2 (502,100 ft2)
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FAB Layout
One of the largest & the best super clean room facilities in III-V industry: 1 Floor for clean room, Sub FAB for utilities
FoundryLine
Test &MeasurementNano
R&D(class 100)
Epi
CVD Photo &Lithography
(class 1)
RentalAreaEquipment
Development
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Fab Facility
Nano DeviceProcess Fab
(60% of Clean Room Area)
Litho / Pattern Zone
(661m2)
Full Process Zone
(430m2)
Nano R&D Zone(1,124m2)
Test & Measurement Fab
(397m2)
Equipment Development Fab
(331m2)
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FAB Service
Nano Device Process
Epi Service(AdvancedHigh Quality)
ElectronicDevices(MMIC)
Nano CMOSHybridCompoundSemiconductor
Opto-ElectronicDevices(OEIC)
NovelNano Devices
(Nanotubes,Molecular DevicesSpintronics)
R P P F C R F C P F C R P
R C
Equipment Development Test & Measurement
R P
R FCompound Semiconductor (60%)
Non Silicon (10%) Equipments (30%) P C
Research
Process
Foundry Service
Commercialization
Nano Device Process
Epi Service(AdvancedHigh Quality)
ElectronicDevices(MMIC)
Nano CMOSHybridCompoundSemiconductor
Opto-ElectronicDevices(OEIC)
NovelNano Devices
(Nanotubes,Molecular DevicesSpintronics)
R P P F C R F C P F C R P
R C
Equipment Development Test & Measurement
R P
R FCompound Semiconductor (60%)
Non Silicon (10%) Equipments (30%) P C
Research
Process
Foundry Service
Commercialization
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User Friendly “Customer Service System”
Web based on-line booking, scheduling, monitoring, and payment
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E-beam LithoStepper
FIB
MOCVD
Main Equipment
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Fab Facility
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Nanolithography Applications: pHEMT
T-gate of InGaAs pHEMT by50 nm Resolution E-beam Lithography
(Seoul National Univ.)
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Nanolithography Applications: Nano Photonics
Photonic Crystal Waveguide Fabrication byE-beam Writer or FIB Patterning (~200nm)
(Cambridge Univ. & SKKU)
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Nanolithography Applications: Quantum Dots
Quantum Dot Patterning by AIPEL (Atomic Image ProjectionE-beam Lithography)
Si atoms
Resist patterns
1 nm
(Seoul National Univ.)
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Epitaxial Growth Applications: Quantum Dots
(Seoul National Univ.)
Self-assembled Compound Semiconductor Quantum Dots Grown by MOCVD
QD
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Summary
National infrastructure for the nano technology R&D and businesssupport
State-of-the-art facility & equipment
Strong network of academia, industries, and research communities
User friendly service, facility, and location
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KANC would provide the best service for worldwide customers
with the high quality and user friendly operation.
Thank you !!
http://www.kanc.re.kr