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Product Data Sheet SiPM – Silicon Photomultiplier
PM3325-WB-D0
Rev. 12/2018
SiPM
Rev. 12/2018 Hofer Str. 3 81737 Munich, Germany
KETEK GmbH www.ketek.net [email protected]
phone fax
+49 89 673 467 70 +49 89 673 467 77
Rev. 2020-A
Key Features Overview
• 3 x 3 mm² Active Area, 25 µm Microcells
• High Photo Detection Efficiency
• Excellent Timing Properties
• Replacement for PMTs, APDs and PIN Diodes
• Low Voltage Operation (typ. about 30 V)
• Cost Efficient and Robust (MSL1 approved)
Application Examples • Single Photon Counting • Photon Timestamping • Biophotonics
• Scintillator Readout • Handheld and Mobile Devices • High Energy Physics & Research
• Medical Imaging (PET, SPECT) • Hazard & Threat Detection • Analytical Instrumentation
Spectral Response Photo Detection Efficiency at 5 V Overvoltage Photo Detection Efficiency vs. Overvoltage at 21°C
General Parameters and Order Information
SiPM Type Active Area [mm²]
Microcell Size [µm]
No. of Microcells
Dimensions [mm3] Order-Code
PM3325-WB 3.0 x 3.0 25 13920 3.315 x 3.315 x 0.595 PM3325-WB-D0
Main Characteristics Parameter Typ. Unit Breakdown Voltage (VBD) at 21°C min. 24.0, max. 25.0 V Breakdown Voltage Variation per Reel ±0.125 V Recommended Overvoltage (VOV) 2.0 – 5.0 (max. 6.0) V Temperature Dependency of VBD 22.0 mV/K Temperature Dependency of Gain 0.3% @ 5.0 VOV 1/K Operating Temperature Range -40 to + 60 °C Reliability Classification MSL1 Index of Refraction of Glass Entrance Window 1.52 @ 430 nm
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
50%
300 400 500 600 700 800 900
PDE
[%]
Wavelength [nm]
WB Series: 25 µm cell type
0%
5%
10%
15%
20%
25%
30%
35%
40%
45%
50%
0 1 2 3 4 5 6 7 8 9 10
PDE
[%]
Overvoltage [V]
WB Series: 25 µm cell typePDE at 430 nm
Product Data Sheet SiPM – Silicon Photomultiplier
PM3325-WB-D0
Rev. 12/2018
SiPM
Rev. 12/2018 Hofer Str. 3 81737 Munich, Germany
KETEK GmbH www.ketek.net [email protected]
phone fax
+49 89 673 467 70 +49 89 673 467 77
Rev. 2020-A
Electrical and Optical Characteristics at 21°C Parameter Typ. @ 2.5 VOV Typ. @ 5.0 VOV Unit Photo Detection Efficiency at 430 nm 31 45 % Dark Count Rate 50 125 kHz/mm² Dark Current 0.15 (max. 0.2) 0.7 (max. 1.0) µA Gain 0.87 1.74 x 106 Crosstalk Probability* 12 26 % Afterpulsing Probability 1 5 % Terminal Capacitance 1 nF Recovery Time τ 33 (at 1 Ω load), 80 (at 50 Ω load) ns Signal Rise Time 110 ps
* Including delayed crosstalk with a probability < 0.1%
Mechanical Specifications Dimensions and Recommended Footprint*
* Footprint and 3D model are available for download at www.ketek.net/sipm-downloads/
PM3325-WB preassembled on PCB with Pins (available for Evaluation Purposes)*
* Mates e.g. with Preci-Dip 801-87-003-10-001101
Product Data Sheet SiPM – Silicon Photomultiplier
PM3325-WB-D0
Rev. 12/2018
SiPM
Rev. 12/2018 Hofer Str. 3 81737 Munich, Germany
KETEK GmbH www.ketek.net [email protected]
phone fax
+49 89 673 467 70 +49 89 673 467 77
Rev. 2020-A
Typical Performance Characteristics Temperature Coefficient of the Breakdown Voltage Temperature Coefficient of the Gain
Linearity at 430 nm Gain of WB Series
Dark Count Rate at 21°C Dark Count Rate vs. Temperature
Direct Optical Crosstalk Delayed Optical Crosstalk
23
23.5
24
24.5
25
25.5
-40 -30 -20 -10 0 10 20 30 40 50 60
Brea
kdow
n Vo
ltage
[V]
Temperature [°C]
PM3325-WB22 mV/K
-0.8%
-0.7%
-0.6%
-0.5%
-0.4%
-0.3%
-0.2%
-0.1%
0.0%
2 2.5 3 3.5 4 4.5 5
Gai
n Va
riatio
n w
ith T
empe
ratu
re [1
/K]
Overvoltage [V]
1E+00
1E+01
1E+02
1E+03
1E+04
1E+05
1E+06
1E+07
1E+00 1E+01 1E+02 1E+03 1E+04 1E+05 1E+06 1E+07
Num
ber
of D
etec
ted
Phot
ons
Number of Impinging Photons
PM3325-WB linear
PM3325-WB lightpulse 70 psPM3325-WB lightpulse 1 µs
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 1 2 3 4 5
Gai
n [1
06 ]
Overvoltage [V]
WB Series: 25 µm cell type
0
20
40
60
80
100
120
140
2 2.5 3 3.5 4 4.5 5
Dar
k Co
unt R
ate
[kH
z/m
m²]
Overvoltage [V]
WB Series
1
10
100
1000
10000
-40 -30 -20 -10 0 10 20 30 40 50 60
DCR
[kH
z/m
m²]
Temperature [°C]
WB Seriesat 5 Vovervoltage
0%
5%
10%
15%
20%
25%
30%
35%
2 2.5 3 3.5 4 4.5 5
Cros
stal
k Pr
obab
ility
[%
]
Overvoltage [V]
PM3325-WB
0.001
0.01
0.1
2 2.5 3 3.5 4 4.5 5
Del
ayed
Cro
ssta
lk P
roba
bilit
y [%
]
Overvoltage [V]
WB Series
Product Data Sheet SiPM – Silicon Photomultiplier
PM3325-WB-D0
Rev. 12/2018
SiPM
Rev. 12/2018 Hofer Str. 3 81737 Munich, Germany
KETEK GmbH www.ketek.net [email protected]
phone fax
+49 89 673 467 70 +49 89 673 467 77
Rev. 2020-A
Afterpulsing Probability Pulse Shape at 1 Ω Load, Single Photon Spectrum
Assembly Specifications Tape and Reel
Recommended Reflow Solder Profile*
* Lead-free no-clean solder paste type 4 is recommended, e.g. SAC305 ROL0 Nihon Handa PF305-118 SMD stencil thickness of 80 µm is recommended
0.001
0.01
0.1
2 2.5 3 3.5 4 4.5 5
Del
ayed
Cro
ssta
lk P
roba
bilit
y [%
]
Overvoltage [V]
WB Series
0
1
-20 0 20 40 60 80 100 120 140 160
Nor
mal
ized
Am
plitu
de
Time [ns]
PM3325-WB
Exponential decayτ = 5.2 nsExponential decayτ = 33 ns
0
1
-1 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Nor
mal
ized
Ent
ries
No. of Photons
PM3325-WB
20406080
100120140160180200220240260
0 50 100 150 200 250 300
Tem
pera
ture
[°C]
Time [s]
260°C max
Soldering above 220°C 45 s max.
-6.0
°C/s
-1
.8°C
/s
1.7°
C/s
0.4°
C/s 0.7°
C/s
1.14
°C/s
-4.0
°C/s
SiPM Anode
SiPM Cathode
Product Data Sheet SiPM – Silicon Photomultiplier
PM3325-WB-D0
Rev. 12/2018
SiPM
Rev. 12/2018 Hofer Str. 3 81737 Munich, Germany
KETEK GmbH www.ketek.net [email protected]
phone fax
+49 89 673 467 70 +49 89 673 467 77
Rev. 2020-A
Revision History Revision and Date Changes
Rev. 2020-A April 2020
Updated design and layout Updated table “Performance Overview at 21°C” and corresponding plots
- Afterpulsing Probability (specified at 2.5 V and 5 V overvoltage) - Recovery Time (specified at 1 Ω and 50 Ω load) - Signal Rise Time (specified more precisely)
Rev. 2019-C July 2019
Updated table “Main Characteristics” and corresponding plots Updated table “Performance Overview at 21°C” corresponding plots Updated “Recommended Reflow Solder Profile” Updated “Tape and Reel Specifications” with number of pcs per reel
Rev. 2019-B June 2019 Added part orientation to “Tape and Reel Specifications”
Rev. 2019-A January 2019
Updated design and layout Updated “Technical Drawing and Recommended Footprint” Added performance plots for all key parameters
Rev. 2018-A December 2018 Added “Tape and Reel Specifications”
Rev. 2017-B April 2017
Updated table “Performance Overview at 21°C” Added “Recommended Reflow Solder Profile”
Rev. 2017-A February 2017 Added “PM33xx-WB preassembled on PCB with Pins (available for Evaluation Purposes)”
Rev. 2016-A October 2016
Initial Release
Important Notice KETEK reserves the right to make changes without further notice to any products herein. KETEK makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does KETEK assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in KETEK data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typical” must be validated for each customer application by customer’s technical experts. KETEK does not convey any license under its patent rights nor the rights of others. KETEK products are not designed, intended, or authorized for use as components in applications in which the failure of the KETEK product could create a situation where personal injury or death may occur. Should Buyer purchase or use KETEK products for any such unintended or unauthorized application, Buyer shall indemnify and hold KETEK and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that KETEK was negligent regarding the design or manufacture of the part.