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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
Préparation des substrats pour la croissance VLS de nanofils
Sébastien Plissard
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
Summary of the presentation
• The Vapor Liquid Solid mechanism (VLS)
• The physical modeling of the system
• The possible catalyst particles
• The self-catalyzed Nanowires • The Vapor Solid mechanism • The droplet assisted growth of nanowires
• The homosubstrates
• The silicon integration
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The VLS mechanism
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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THE « BOTTOM-UP » INTEGRATION THE VAPOUR-LIQUID-SOLID (VLS) MECHANISM
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ENABLE NEW MATERIAL COMBINATIONS
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In most cases, the growth axis is [-1-1-1] for cubic phase or [0001] for hexagonal phase
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AN EXAMPLE OF INTEGRATION ON SILICON
Growth of GaAs and GaAsSb nanowires on Si(111)
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The physical modeling of the system
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The possible catalyst particles
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The list of the possible catalysts:
Gold (Au): Mostly used catalyst
Silver (Ag)
Platinum (Pt)
Copper (Cu)
Tin (Sn)
Element III (III-V nanowires)
…
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The deposition methods
Colloids + spinner
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The deposition methods
Colloids + spinner
In-situ deposition (gold or element III)
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Layer dewetting
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Substrate patterning
Growth
Nanowire arrays
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The self-catalyzed Nanowires
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Selective-Area Growth vs Self-Catalyzed Growth
• The Vapor Solid mechanism (VS) • The droplet assisted growth of nanowires (VLS)
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Selective-Area Growth • The Vapor Solid mechanism (VS)
Same issues than for 2D growth on Si
Pollution
Oxide removal
APD
One advantage:
The diffusion length on the oxide mask
No “parasitic” growth
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Self-Catalyzed Growth
• The droplet assisted growth of nanowires (VLS)
A few advantages compared to VS growth:
The NW diameter depends of the droplet
The droplet can remove the last traces of
oxide (example of Au or Ga)
It is possible to switch from VLS to VS
But …
Limited by the pollution
Not always possible
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THE SUBSTRATE PREPARATION
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THE SUBSTRATE PREPARATION
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38
THE SUBSTRATE PREPARATION
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THE SUBSTRATE PREPARATION
Self-catalyzed GaAs nanowires on Si(111) with e-beam lithography
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Self-catalyzed GaAs nanowires on Si(111) with e-beam lithography
THE SUBSTRATE PREPARATION
… also possible with Nano-Imprint lithography
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InAs InAsSb
More complicated with Indium based materials (no droplet - VS growth)
In2O3 more stable than Ga2O3
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The homosubstrates
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InP nanowires
A large variety of materials: II-VI, III-V and IV-IV
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InP nanowires ZnO nanowires
A large variety of materials: II-VI, III-V and IV-IV
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A large variety of materials: II-VI, III-V and IV-IV
GaP nanowires
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A large variety of materials: II-VI, III-V and IV-IV
GaP nanowires
Si nanowires
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InP (001)
Other substrates
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InP (001)
Other substrates
GaAs on graphene
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LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
The silicon integration
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Requirements for the Silicon integration
Substrates: Si(001) vs Si(110) vs Si(111)
Vertical or Horizontal nanowires (surface preparation)
No “parasitic” growth (patterns)
No Cu or Au catalyst (create mid-gap levels)
Thermal budget < 450°C
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Requirements for the Silicon integration
Substrates: Si(001) vs Si(110) vs Si(111)
Vertical or Horizontal nanowires (surface preparation)
No “parasitic” growth (patterns)
No Cu or Au catalyst (create mid-gap levels)
Thermal budget < 450°C
MOVPE:
- Better homogeneity
- Large scale
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Requirements for the Silicon integration
Substrates: Si(001) vs Si(110) vs Si(111)
Vertical or Horizontal nanowires (surface preparation)
No “parasitic” growth (patterns)
No Cu or Au catalyst (create mid-gap levels)
Thermal budget < 450°C
MOVPE:
- Better homogeneity
- Large scale
MBE:
- Smaller diameters
- Better interfaces
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Ga-based materials (GaP, GaAs, GaSb) by MBE
GaAs(Sb) nanowires on Si(111) Standard HF de-oxidation The Ga droplet can “clean” the substrate (easy to remove the Ga2O3) The oxide help to increase the dewetting of the Ga droplets
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GaN nanowires
A particular case GaN nanowires
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GaN nanowires
A particular case GaN nanowires
Aledia
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In-based materials (InP, InAs, InSb) by MBE
InAs nanowires on Si(111) by MBE Standard HF de-oxidation The growth can be either VS or VLS If VLS then often missing wires If VS then T0 is not well defined In addition: - In do not “clean” the substrate - Difficult to remove the In2O3
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Creating a B-type Si(111) surface
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State of the art of InAs integration on Si(111) by MOVPE
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State of the art of InAs integration on Si(111) by MOVPE
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State of the art of InAs integration on Si(111) by MOVPE
The dislocation are locked at the interface
The InAs nanowires can be
defect-free and fully relaxed
… but not achieved at this yield for MBE
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An example of CMOS compatible InAs growth
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An example of CMOS compatible InAs growth
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An example of CMOS compatible InAs growth
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An example of CMOS compatible InAs growth
![Page 65: Préparation des substrats pour la croissance VLS de nanofilsSummary of the presentation • The Vapor Liquid Solid mechanism (VLS) • The physical modeling of the system • The](https://reader034.vdocuments.net/reader034/viewer/2022051901/5ff0c97c72680d5e562c2e58/html5/thumbnails/65.jpg)
The saturation of the surface with H atoms allows to switch
from VS to VLS due to an improved diffusion length on
the surface
An example of CMOS compatible InAs growth
![Page 66: Préparation des substrats pour la croissance VLS de nanofilsSummary of the presentation • The Vapor Liquid Solid mechanism (VLS) • The physical modeling of the system • The](https://reader034.vdocuments.net/reader034/viewer/2022051901/5ff0c97c72680d5e562c2e58/html5/thumbnails/66.jpg)
LAAS-CNRS / Laboratoire d’analyse et d’architecture des systèmes du CNRS
Laboratoire conventionné avec l’Université Fédérale
de Toulouse Midi-Pyrénées
Merci pour votre attention